JP4809600B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4809600B2
JP4809600B2 JP2004314019A JP2004314019A JP4809600B2 JP 4809600 B2 JP4809600 B2 JP 4809600B2 JP 2004314019 A JP2004314019 A JP 2004314019A JP 2004314019 A JP2004314019 A JP 2004314019A JP 4809600 B2 JP4809600 B2 JP 4809600B2
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Japan
Prior art keywords
substrate
layer
film
double
sided tape
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Expired - Fee Related
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JP2004314019A
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English (en)
Japanese (ja)
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JP2005159333A5 (enExample
JP2005159333A (ja
Inventor
裕吾 後藤
由美子 福本
徹 高山
純矢 丸山
卓也 鶴目
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2004314019A priority Critical patent/JP4809600B2/ja
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Publication of JP2005159333A5 publication Critical patent/JP2005159333A5/ja
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  • Thin Film Transistor (AREA)
JP2004314019A 2003-10-28 2004-10-28 半導体装置の作製方法 Expired - Fee Related JP4809600B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004314019A JP4809600B2 (ja) 2003-10-28 2004-10-28 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003368029 2003-10-28
JP2003368029 2003-10-28
JP2004314019A JP4809600B2 (ja) 2003-10-28 2004-10-28 半導体装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011134989A Division JP2011197696A (ja) 2003-10-28 2011-06-17 半導体装置及びその作製方法

Publications (3)

Publication Number Publication Date
JP2005159333A JP2005159333A (ja) 2005-06-16
JP2005159333A5 JP2005159333A5 (enExample) 2007-08-23
JP4809600B2 true JP4809600B2 (ja) 2011-11-09

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JP2004314019A Expired - Fee Related JP4809600B2 (ja) 2003-10-28 2004-10-28 半導体装置の作製方法

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013179358A (ja) * 2007-03-13 2013-09-09 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1760776B1 (en) * 2005-08-31 2019-12-25 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for semiconductor device with flexible substrate
JP5045028B2 (ja) * 2006-08-16 2012-10-10 富士通セミコンダクター株式会社 表面形状センサとその製造方法
TWI433306B (zh) 2006-09-29 2014-04-01 Semiconductor Energy Lab 半導體裝置的製造方法
JP5262203B2 (ja) 2008-03-11 2013-08-14 住友電気工業株式会社 化合物半導体単結晶の製造装置および製造方法
JP5616671B2 (ja) * 2010-04-07 2014-10-29 協立化学産業株式会社 接着剤層を有する多層板状部材の分離方法及び分離装置
JP5852810B2 (ja) * 2010-08-26 2016-02-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR102082271B1 (ko) * 2013-05-24 2020-04-16 엘지디스플레이 주식회사 캐리어기판 분리 시스템 및 분리 방법
JP6263337B2 (ja) 2013-05-31 2018-01-17 株式会社ジャパンディスプレイ 表示装置及びその製造方法
TWI671141B (zh) * 2013-08-30 2019-09-11 半導體能源研究所股份有限公司 支撐體供應裝置及供應支撐體的方法
KR102469311B1 (ko) * 2016-03-31 2022-11-18 동우 화인켐 주식회사 유연성 디스플레이 장치의 제조 방법
JP6756508B2 (ja) * 2016-04-04 2020-09-16 株式会社ジャパンディスプレイ 表示装置
JP6719948B2 (ja) * 2016-04-04 2020-07-08 株式会社ジャパンディスプレイ 表示装置
EP4226410A4 (en) * 2020-10-06 2024-04-10 Omniply Technologies Inc. METHOD FOR FABRICATING AND SEPARING FLEXIBLE MICROELECTRONIC DEVICES FROM RIGID SUBSTRATES

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2715503B1 (fr) * 1994-01-26 1996-04-05 Commissariat Energie Atomique Substrat pour composants intégrés comportant une couche mince et son procédé de réalisation.
JP3169068B2 (ja) * 1997-12-04 2001-05-21 日本電気株式会社 電子線露光方法及び半導体ウエハ
FR2823596B1 (fr) * 2001-04-13 2004-08-20 Commissariat Energie Atomique Substrat ou structure demontable et procede de realisation
JP4027740B2 (ja) * 2001-07-16 2007-12-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2003229548A (ja) * 2001-11-30 2003-08-15 Semiconductor Energy Lab Co Ltd 乗物、表示装置、および半導体装置の作製方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013179358A (ja) * 2007-03-13 2013-09-09 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法

Also Published As

Publication number Publication date
JP2005159333A (ja) 2005-06-16

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