JP4797453B2 - Electro-optical device manufacturing method, electro-optical device, electronic apparatus, and semiconductor substrate manufacturing method - Google Patents

Description

  The present invention relates to an electro-optical device manufacturing method for manufacturing an electro-optical device such as a liquid crystal device by etching, for example, a conductive film and a dielectric film forming a storage capacitor through the same resist film. The present invention relates to an optical device, an electronic apparatus including the same, and a technical field of a method for manufacturing a semiconductor substrate.

  In this type of electro-optical device, an electro-optical material such as liquid crystal is sandwiched between a pair of substrates, and an image is displayed by transmitting light so as to pass through them. Such an electro-optical device includes pixel electrodes arranged in a matrix on one of the pair of substrates, scanning lines and data lines provided so as to sew the pixel electrodes, and pixel switching. By providing a TFT (Thin Film Transistor) or the like as an element for use, an element capable of active matrix driving is provided. Such an electro-optical device is generally driven in an active matrix by including a storage capacitor electrically connected to the TFT and the pixel electrode. This holding capacitor holds the potential applied to the pixel electrode for a certain period, and makes it possible to remarkably improve the potential holding characteristics in each pixel. In many cases, the storage capacitor includes a two-layer dielectric film sandwiched between a pair of electrodes for the purpose of securing the capacitance. The dielectric film constituting the storage capacitor and the conductive film electrically connected to the TFT and the pixel electrode are formed on the insulating film formed on the substrate, and then passed through a resist film having a predetermined pattern. As a result, the storage capacitor is formed in a predetermined region.

  Patent Document 1 discloses a method of manufacturing a thin film transistor in which metal residues are removed by oxygen plasma in order to improve the uniformity of channel etching of the thin film transistor. Patent Document 2 discloses a method of removing a polymer residue after dry etching a film to be processed including a tantalum oxide film when manufacturing a semiconductor device.

JP-A-5-283427 Japanese Patent Application Laid-Open No. 2004-349531

  In this type of electro-optical device, in order to simplify the manufacturing process, a plurality of films made of a dielectric film and a conductive film are etched all at once or sequentially through the same resist film formed on these films. There is.

  However, after etching an arbitrary film through the resist film and then etching another film formed thereunder through the same resist film, the resist film is etched after etching the above arbitrary film. In some cases, pattern abnormality occurs, and another film cannot be etched into a predetermined pattern in the subsequent etching process of the other film. More specifically, for example, after etching a polysilicon film which is an example of a conductive film constituting a storage capacitor with a resist film formed thereon, a silicon oxide film formed under the polysilicon film, etc. The inventors of the present application have confirmed that a large number of pattern abnormalities occur in the silicon oxide film when the dielectric film is etched through the resist film.

  Such a pattern abnormality is extremely larger than a pattern abnormality found in an electro-optical device such as a liquid crystal device that operates normally, and is one of the causes of reducing the yield of the electro-optical device in the manufacturing process.

  Therefore, the present invention has been made in view of the above-described problems. For example, a resist film produced when a plurality of films formed under the same resist film are etched all at once or sequentially. It is an object of the present invention to provide an electro-optical device manufacturing method capable of reducing pattern abnormality, an electro-optical device manufactured using the electro-optical device, an electronic apparatus including the electro-optical device, and a semiconductor substrate manufacturing method.

In order to solve the above-described problem, an electro-optical device manufacturing method according to the present invention includes a step of etching the plurality of films through the same resist film on the plurality of films stacked on the substrate. A method of manufacturing an apparatus, comprising: a first step of etching one of the plurality of films; and another film formed on a lower layer side of the one of the plurality of films, the resist film And a third step of cleaning the resist film between the first step and the second step . In the first step, the first step is performed using a gas containing bromine. The film is etched, and the resist film is exposed to the atmosphere between the first step and the third step .

  According to the electro-optical device manufacturing method of the present invention, the foreign matter adhered to the resist film after the first step is washed by the third step, and the resist film having a predetermined pattern shape from which the foreign matter has been removed, Another film formed on the lower layer side of one film can be etched. The foreign matter adhering to the resist film is generated according to an individual specific manufacturing process after the first step, and depends on conditions such as an atmosphere in which the resist film is exposed between the first step and the second step. Individually different. In the third step, the resist film is cleaned using a technique capable of removing such foreign matter.

  Therefore, according to the method of manufacturing an electro-optical device according to the present invention, even when one film and another film are sequentially etched using the same resist film, the other film can be etched into a predetermined pattern. Abnormalities can be reduced.

  The “film” may be any thin film as long as it is a thin film constituting various multilayer structures or elements included in the electro-optical device. Such a film is once laminated, and then etched into a predetermined pattern shape through a first process and a second process, for example, in accordance with the structure of an element constituted by these films.

  According to the method for manufacturing an electro-optical device according to the present invention, since the film can be etched through the resist film maintained in a predetermined pattern, it is possible to reduce defects caused by the film pattern abnormality. Therefore, a high quality electro-optical device can be efficiently manufactured by etching a plurality of films through the same resist film.

Furthermore, in the manufacturing how the electro-optical device according to the present invention, in the first step, etching the first film by using a gas containing bromine, between the first step and the third step, the the resist film to曝to the atmosphere.

By exposing the Re resist film to the air, bound bromine attached to potassium and one layer in the atmosphere, potassium bromide is generated. The produced potassium bromide adheres to the resist film and contributes to an abnormality in the pattern of the resist film.

  Therefore, it is possible to reduce the pattern abnormality of the resist film by washing the resist film and removing potassium bromide adhering to the resist film in a third process performed after the first process.

  In another aspect of the method of manufacturing the electro-optical device according to the invention, the resist film may be cleaned using a cleaning liquid containing water in the third step.

  According to this aspect, the foreign matter adhering to the resist film can be cleaned with the cleaning liquid, and the pattern abnormality of the resist film can be reduced. This cleaning liquid contains water, and for example, a cleaning liquid having a ph value matched to the foreign matter is used so that the foreign matter to be removed can be removed from the resist film. Further, the cleaning liquid is not limited to a case where a predetermined substance is dissolved in water so as to have a predetermined ph value, and may be pure water or cleaning water according to this.

  In another aspect of the method for manufacturing the electro-optical device according to the invention, in the third step, the surfaces of the resist film and the other film may be cleaned with oxygen plasma so as not to damage the resist film.

  According to this aspect, it is possible to remove foreign matter adhering to the resist film using oxygen plasma. In this case, for example, the conditions for irradiating the resist film with oxygen plasma are individually and specifically set according to the constituent material of the resist film and the characteristics of the foreign matter.

  In another aspect of the method for manufacturing an electro-optical device according to the invention, the one film is a first conductive film formed in an uppermost layer among the plurality of films, and the other film is the first film. A dielectric film in contact with the first conductive film on a lower surface of the conductive film; and a second conductive film in contact with the dielectric film on a lower surface of the dielectric film, wherein the first conductive film and the dielectric The film and the second conductive film form a storage capacitor that temporarily holds an image signal supplied to the pixel electrode. In the first step, the first conductive film is interposed through the resist film. Etching may be performed, and the dielectric film may be etched through the resist film in the second step.

  According to this aspect, for example, after a first conductive film such as a polysilicon film is formed on a dielectric film such as a silicon oxide film, the polysilicon film is etched through the resist film in the first step, and then the first Foreign substances adhering to the resist film are removed in the three steps, and the silicon oxide film can be etched through the same resist film in the second step without causing a pattern abnormality.

  Therefore, according to this aspect, for example, the holding capacity formed in the image display area on the substrate can be formed in a predetermined area, and the holding capacity is maintained as designed so that a sufficient capacity for temporarily maintaining the image signal can be secured. Capacitance can be formed. Note that the first conductive film, the second conductive film, and the dielectric film may be formed by a material and a film forming method that are individually and specifically applied according to the design of the storage capacitor and the electro-optical device. The film is not limited to the polysilicon film and the silicon oxide film. Further, the first conductive film and the second conductive film may be composed of a single layer film or a multilayer film containing a metal or an alloy, and the dielectric film is not limited to a single layer structure. For example, HTO (High Temperature) It may be configured to have a three-layer structure such as a two-layer structure composed of an Oxide) film and a silicon oxide film, a three-layer structure such as a silicon oxide film, a silicon nitride film, and a silicon oxide film, or a multilayer structure of more.

  The inventor of the present application estimated that the pattern abnormality of the resist film is caused by a foreign matter adhering to the resist film after etching the polysilicon film, and in the electro-optical device such as a liquid crystal device in which the defect occurred, the polysilicon film It has been confirmed that the pattern abnormality existing in the resist film after the etching of the first conductive film is much larger than that in a normal electro-optical device. In addition, in the third step, it has also been confirmed that the number of defects in the electro-optical device is reduced by cleaning the resist film. Therefore, according to this aspect, it is possible to efficiently manufacture a high-quality electro-optical device by sequentially etching the first conductive film, the second conductive film, and the dielectric film through the same resist film. is there.

  In another aspect of the method for manufacturing an electro-optical device according to the invention, the one film is a stacked film of a first conductive film formed in an uppermost layer of the plurality of films and a dielectric film therebelow. The other film is a second conductive film in contact with the dielectric film on a lower surface of the dielectric film, and the first conductive film, the dielectric film, and the second conductive film are supplied to the pixel electrode. A storage capacitor for temporarily holding the image signal, and in the first step, the first conductive film and the dielectric film are etched through the resist film, and in the second step, The second conductive film may be etched through the resist film.

  According to this aspect, a cleaning process can be performed between the second conductive film and the dielectric film.

In order to solve the above problems, a method of manufacturing a semiconductor substrate according to the present invention includes a step of etching the plurality of films through the same resist film on the plurality of films stacked on the substrate. In the manufacturing method, a first step of etching one of the plurality of films, and another film formed on the lower layer side of the one film among the plurality of films via the resist film A second step of etching; and a third step of cleaning the resist film between the first step and the second step . In the first step, the first film is formed using a gas containing bromine. Etching is performed, and the resist film is exposed to the atmosphere between the first step and the third step .

  According to the method for manufacturing a semiconductor substrate according to the present invention, a high-quality semiconductor substrate can be obtained by etching a plurality of films through the same resist film as in the method for manufacturing the electro-optical device according to the present invention. Can be manufactured efficiently.

  Such an operation and other advantages of the present invention will become apparent from the embodiments described below.

  Hereinafter, a method for manufacturing an electro-optical device, an electro-optical device, an electronic apparatus, and a method for manufacturing a semiconductor substrate according to the present embodiment will be described with reference to the drawings. In the present embodiment, an active matrix driven liquid crystal device is taken as an example of an electro-optical device.

  First, the configuration of the pixel portion in the liquid crystal device of the present embodiment will be described with reference to FIGS. FIG. 1 is an equivalent circuit of various elements, wirings, and the like in a plurality of pixels formed in a matrix that forms an image display area of a liquid crystal device. FIG. 2 is a plan view of a plurality of pixel groups adjacent to each other on a TFT array substrate on which data lines, scanning lines, pixel electrodes, and the like are formed. FIG. 3 is a data line, a shield layer, and a pixel in FIG. It is the top view which extracted and drawn these elements in order to show the arrangement | positioning relationship of an electrode. 4 is a cross-sectional view taken along the line AA ′ of FIG. In FIG. 4, the scale of each layer / member is different for each layer / member so that each layer / member can be recognized on the drawing.

  In FIG. 1, a pixel electrode 9a and a TFT 30 for controlling the switching of the pixel electrode 9a are formed in each of a plurality of pixels formed in a matrix constituting the image display region of the liquid crystal device according to the present embodiment. The data line 6 a to which the image signal is supplied is electrically connected to the source of the TFT 30. The image signals S1, S2,..., Sn to be written to the data lines 6a may be supplied line-sequentially in this order, or may be supplied for each group to a plurality of adjacent data lines 6a. May be.

  The gate of the TFT 30 is electrically connected to the scanning line 3a. The liquid crystal device of this embodiment is configured to apply scanning signals G1, G2,..., Gm in a pulse-sequential manner in this order to the scanning line 3a at a predetermined timing. The pixel electrode 9a is electrically connected to the drain of the TFT 30, and the image signal S1, S2,... Supplied from the data line 6a is closed by closing the switch of the TFT 30 serving as a switching element for a certain period. Sn is written at a predetermined timing.

  A predetermined level of image signals S1, S2,..., Sn written in the liquid crystal as an example of the electro-optical material via the pixel electrode 9a is held for a certain period with the counter electrode formed on the counter substrate. The The liquid crystal modulates light and enables gradation display by changing the orientation and order of the molecular assembly depending on the applied voltage level. In the normally white mode, the transmittance for incident light is reduced according to the voltage applied in units of each pixel, and in the normally black mode, the light is incident according to the voltage applied in units of each pixel. The light transmittance is increased, and light having a contrast corresponding to the image signal is emitted from the electro-optical device as a whole.

  In order to prevent the image signal held here from leaking, a holding capacitor 70 is added in parallel with the liquid crystal capacitor formed between the pixel electrode 9a and the counter electrode. The storage capacitor 70 is provided side by side along the scanning line 3a, and includes a capacitor electrode 300 including a fixed potential side capacitor electrode and fixed at a constant potential.

  Hereinafter, an actual configuration of the electro-optical device that realizes the above-described circuit operation using the data line 6a, the scanning line 3a, the TFT 30, and the like will be described with reference to FIGS.

  First, in FIG. 2, a plurality of pixel electrodes 9a are provided in a matrix on the TFT array substrate 10, and a data line 6a and a lower light-shielding film 11a to be described later are provided along the vertical and horizontal boundaries of the pixel electrode 9a. A scanning line 3a that also serves as the function is provided. The data line 6a has a laminated structure including an aluminum film as will be described later. A channel region 1a ′ indicated by a hatched region in the upper right part of the drawing of the semiconductor layer 1a is formed at each intersection of the lower light-shielding film 11a functioning as a scanning line and the data line 6a. Thus, the gate electrode 3aa is formed in an island shape in accordance with the channel region 1a ′ formed in an island shape. A pixel switching TFT 30 is provided at each intersection of the scanning line and the data line 6a.

  Next, as shown in FIG. 4, which is a cross-sectional view taken along the line AA ′ of FIG. 2, the liquid crystal device is disposed opposite to the TFT array substrate 10 made of, for example, a quartz substrate, a glass substrate, or a silicon substrate. For example, a counter substrate 20 made of a glass substrate or a quartz substrate is provided.

  As shown in FIG. 5, a pixel electrode 9a is provided on the TFT array substrate 10 side, and an alignment film 16 subjected to a predetermined alignment process such as a rubbing process is provided above the pixel electrode 9a. The pixel electrode 9a is made of a transparent conductive film such as an ITO film. On the other hand, a counter electrode 21 is provided on the entire surface of the counter substrate 20, and an alignment film 22 subjected to a predetermined alignment process such as a rubbing process is provided below the counter electrode 21. . Similarly to the pixel electrode 9a, the counter electrode 21 is made of a transparent conductive film such as an ITO film, and the alignment films 16 and 22 are made of a transparent organic film such as a polyimide film. Between the TFT array substrate 10 and the counter substrate 20 arranged so as to face each other, an electro-optical material such as liquid crystal is sealed in a space surrounded by a sealing material (see FIGS. 5 and 6), which will be described later. Is formed. The liquid crystal layer 50 takes a predetermined alignment state by the alignment films 16 and 22 in a state where an electric field from the pixel electrode 9a is not applied. The liquid crystal layer 50 is made of, for example, an electro-optical material in which one kind or several kinds of nematic liquid crystals are mixed. The sealing material is an adhesive made of, for example, a photocurable resin or a thermosetting resin, for bonding the TFT substrate 10 and the counter substrate 20 around them, and a distance between the two substrates is set to a predetermined value. Spacers such as glass fiber or glass beads are mixed.

  On the other hand, on the TFT array substrate 10, in addition to the pixel electrode 9a and the alignment film 16, various configurations including these are provided in a laminated structure. As shown in FIG. 4, in this stacked structure, in order from the bottom, the first layer including the lower light-shielding film 11a also serving as the scanning line 3a, the second layer including the TFT 30, the third layer including the storage capacitor 70, and the data line 6a. And the like, a fifth layer on which the shield layer 400 is formed, and a sixth layer (uppermost layer) including the pixel electrode 9a, the alignment film 16, and the like. A base insulating film 12 is provided between the first layer and the second layer, a first interlayer insulating layer 41 is provided between the second layer and the third layer, a second interlayer insulating layer 42 is provided between the third layer and the fourth layer, and A third interlayer insulating layer 43 is provided between the fourth layer and the fifth layer, and a fourth interlayer insulating layer 44 is provided between the fifth layer and the sixth layer to prevent short-circuiting between the above-described elements. ing. In these various insulating films 12, 41, 42, 43 and 44, for example, contact holes for electrically connecting the high concentration source region 1d in the semiconductor layer 1a of the TFT 30 and the data line 6a are also provided. Yes. Hereinafter, each of these elements will be described in order from the bottom.

  The first layer includes, for example, a simple metal, an alloy containing at least one of refractory metals such as Ti (titanium), Cr (chromium), W (tungsten), Ta (tantalum), and Mo (molybdenum). A lower light-shielding film 11a made of metal silicide, polysilicide, or a laminate of these is provided. The lower light-shielding film 11a is formed in a stripe shape extending in the X direction in FIG. As shown in FIG. 2, the lower light-shielding film 11a has a protruding portion along the direction in which the data line 6a extends. This defines the opening area of each pixel (see FIG. 2). However, the protrusions extending from the adjacent lower light shielding films 11a do not contact each other and are electrically insulated from each other. Otherwise, the lower light shielding film 11a cannot function as the scanning line 3a.

  Next, in the second layer, the TFT 30 is formed by providing the gate electrode 3aa so as to face the channel region 1a ′ of the semiconductor layer 1a. As shown in FIG. 4, the TFT 30 has an LDD (Lightly Doped Drain) structure, and includes, as its constituent elements, a gate electrode 3aa, for example, a polysilicon film from the lower light-shielding film 11a as a scanning line. Channel region 1a ′ of semiconductor layer 1a in which a channel is formed by an electric field, insulating film 2 including a gate insulating film that insulates gate electrode 3aa and semiconductor layer 1a, low-concentration source region 1b and low-concentration drain region in semiconductor layer 1a 1c, a high concentration source region 1d, and a high concentration drain region 1e.

  The TFT 30 preferably has an LDD structure as shown in FIG. 4, but may have an offset structure in which impurities are not implanted into the low concentration source region 1b and the low concentration drain region 1c, and the gate electrode 3aa as a mask. It may be a self-aligned TFT in which impurities are implanted at a high concentration and a high concentration source region and a high concentration drain region are formed in a self-aligning manner. In the present embodiment, only one gate electrode of the pixel switching TFT 30 is disposed between the high-concentration source region 1d and the high-concentration drain region 1e. However, two or more gates are interposed between these gate electrodes. An electrode may be arranged. If the TFT is configured with dual gates or triple gates or more in this way, leakage current at the junction between the channel and the source and drain regions can be prevented, and the off-time current can be reduced. Further, the semiconductor layer 1a constituting the TFT 30 may be a non-single crystal layer or a single crystal layer. A known method such as a bonding method can be used for forming the single crystal layer. By making the semiconductor layer 1a a single crystal layer, it is possible to improve the performance of peripheral circuits in particular.

  In the second layer, a relay electrode 719 is formed as the same film as the gate electrode 3aa. As shown in FIG. 2, the relay electrode 719 is formed in an island shape so as to be positioned substantially at the center of one side of each pixel electrode 9a as viewed in a plan view. Since the relay electrode 719 and the gate electrode 3aa are formed as the same film, when the latter is made of a conductive polysilicon film or the like, the former is also made of a conductive polysilicon film or the like.

  A base insulating film 12 made of, for example, a silicon oxide film is provided on the lower light shielding film 11a described above and below the TFT 30. In addition to the function of interlayer insulating the TFT 30 from the lower light-shielding film 11a, the base insulating film 12 is formed on the entire surface of the TFT array substrate 10 so that the surface of the TFT array substrate 10 is roughened during the surface polishing or remains after cleaning. For example, the pixel switching TFT 30 has a function of preventing characteristic changes.

  In the base insulating film 12, groove-like contact holes 12cv are dug along the channel length direction of the semiconductor layer 1a extending along the data line 6a described later on both sides of the semiconductor layer 1a in plan view. Corresponding to the contact hole 12cv, the gate electrode 3aa laminated thereon includes a portion formed in a concave shape on the lower side. Since the gate electrode 3aa is formed so as to fill the entire contact hole 12cv, a side wall portion 3b formed integrally with the gate electrode 3aa is extended. Thereby, as shown in FIG. 2, the semiconductor layer 1a of the TFT 30 is covered from the side as seen in a plan view, and at least the incidence of light from this portion is suppressed. .

  The side wall 3b is formed so as to fill the contact hole 12cv, and its lower end is in contact with the lower light-shielding film 11a. Since the lower light-shielding film 11a is formed in a stripe shape as described above, the gate electrode 3aa and the lower light-shielding film 11a present in a certain row are always at the same potential as long as attention is paid to the row.

  Next, a first relay layer 71, a dielectric film 75, and a capacitor electrode 300 that form the storage capacitor 70 are formed in the third layer. The storage capacitor 70 includes a first relay layer 71 as a pixel potential side capacitor electrode connected to the high concentration drain region 1e of the TFT 30 and the pixel electrode 9a, and a capacitor electrode 300 as a fixed potential side capacitor electrode. It is formed by being opposed to each other via 75. According to the storage capacitor 70, the potential storage characteristic of the pixel electrode 9a can be remarkably improved. Further, as shown in FIG. 2, the storage capacitor 70 according to the present embodiment is formed so as not to reach the light transmission region substantially corresponding to the formation region of the pixel electrode 9a (in other words, the light shielding region). Therefore, the pixel aperture ratio of the entire liquid crystal device is kept relatively large, and thus a brighter image can be displayed.

  More specifically, the first relay layer 71 is made of, for example, a conductive polysilicon film and functions as a pixel potential side capacitor electrode. However, the 1st relay layer 71 may be comprised from the single layer film or multilayer film containing a metal or an alloy. In addition to the function as a pixel potential side capacitor electrode, the first relay layer 71 relay-connects the pixel electrode 9a and the high-concentration drain region 1e of the TFT 30 via the contact holes 83, 881, 882, 402, and 89. It has the function to do. The first relay layer 71 is formed so as to have substantially the same shape as the planar shape of the capacitor electrode 300 described later.

  The capacitor electrode 300 functions as a fixed potential side capacitor electrode of the storage capacitor 70. In order to set the capacitor electrode 300 to a fixed potential, the capacitor electrode 300 is made to be electrically connected to a shield layer 400 described later, which is set to a fixed potential. The capacitor electrode 300 includes, for example, a single metal, an alloy, a metal silicide, a polysilicide, containing at least one of refractory metals such as Ti, Cr, W, Ta, and Mo, similarly to the lower light shielding film 11a. It is good to comprise from light-shielding materials, such as what laminated | stacked these. According to this, the capacitor electrode 300 has a function of blocking light that is about to enter the TFT 30 from above.

As shown in FIG. 4, the dielectric film 75 is, for example, a relatively thin silicon oxide film such as an HTO (High Temperature Oxide) film, an LTO (Low Temperature Oxide) film having a film thickness of about 5 to 200 nm, or a silicon nitride film. It is composed of a dielectric material.

  In particular, in the present embodiment, the dielectric film 75 is composed of a single silicon oxide film, but may have a two-layer structure in which a silicon oxide film and a silicon nitride film are stacked. According to the dielectric film having such a multilayer structure, it is possible to increase the capacity as compared with the case where the storage capacitor 70 is constituted by a single layer of dielectric. The dielectric film 75 may be configured to have a three-layer structure or a higher storage structure such as a silicon oxide film, a silicon nitride film, and a silicon oxide film.

  The first interlayer insulating layer 41 is formed on the TFT 30 to the gate electrode 3aa and the relay electrode 719 and the storage capacitor 70 described above. The first interlayer insulating layer 41 is formed of a silicate glass film such as NSG (non-silicate glass), PSG (phosphorus silicate glass), BSG (boron silicate glass), BPSG (boron phosphorus silicate glass), or the like, substantially as described above. What is necessary is just to comprise by a silicon film, a silicon oxide film, etc.

  A contact hole 881 is formed in the first interlayer insulating layer 41 so as to have an electrical connection point on the lower surface of the lower electrode 71 in FIG. As a result, electrical connection between the first relay layer 71 and the relay electrode 719 is achieved. The first interlayer insulating layer 41 has a contact hole 882 that is opened so as to penetrate the second interlayer insulating layer 42 in order to achieve electrical connection with a second relay layer 6a2 described later. . Further, a contact hole 81 that electrically connects the high-concentration source region 1d of the TFT 30 and a data line 6a described later is opened in the first interlayer insulating layer 41 while penetrating the second interlayer insulating layer 42 described later. Has been. In addition, the first interlayer insulating layer 41 is provided with a contact hole 83 that electrically connects the high-concentration drain region 1 e of the TFT 30 and the first relay layer 71 constituting the storage capacitor 70.

  A data line 6a is formed in the fourth layer. As shown in FIG. 4, the data line 6a is formed as a film having a three-layer structure of a layer 41A made of aluminum, a layer 41TN made of titanium nitride, and a layer 401 made of a silicon nitride film in order from the lower layer. The silicon nitride film 401 is patterned to a slightly larger size so as to cover the lower aluminum layer 41A and titanium nitride layer 41TN.

  In the fourth layer, a shield layer relay layer 6a1 and a second relay layer 6a2 are formed as the same film as the data line 6a. As shown in FIG. 2, these are not formed so as to have a planar shape continuous with the data line 6a when viewed in a plan view, but are formed so as to be separated from each other by patterning. Yes.

  As described above, the second interlayer insulating layer 42 is formed on the storage capacitor 70 and below the data line 6a. The second interlayer insulating layer 42 is formed of NSG, PSG, as described above. , A silicate glass film such as BSG or BPSG, a silicon nitride film, a silicon oxide film, or the like. A contact hole 801 is formed in the second interlayer insulating layer 42 to electrically connect the shield layer relay layer 6a1 and the capacitor electrode 300, which is the upper electrode on the storage capacitor 70. Further, a contact hole 882 for electrically connecting the second relay layer 6a2 and the relay electrode 719 is formed in the second interlayer insulating layer 42.

  Next, a shield layer 400 is formed on the fifth layer. When viewed in plan, the shield layer 400 is formed in a lattice shape so as to extend in the X direction and the Y direction in the drawing, as shown in FIGS. The portion extending in the Y direction in the figure in the capacitance wiring 400 is formed so as to cover the data line 6a and wider than the data line 6a. In addition, the portion extending in the X direction in the drawing has a notch in the vicinity of the center of one side of each pixel electrode 9a in order to secure a region for forming a third relay layer 402 described later.

  In the corners of the intersecting portions of the shield layers 400 extending in the XY directions in FIGS. 2 and 3, substantially triangular portions are provided so as to fill the corners. Since the substantially triangular portion is provided in the shield layer 400, light entering the semiconductor layer 1a of the TFT 30 from obliquely above is reflected or absorbed by the triangular portion. Therefore, the semiconductor layer 1a is not reached. Therefore, it is possible to suppress the generation of light leakage current and display a high-quality image without flicker. The shield layer 400 extends from the image display region 10a in which the pixel electrode 9a is disposed to the periphery thereof, and is electrically connected to a constant potential source so as to have a fixed potential.

  As described above, the capacitor cup formed between the data line 6a and the pixel electrode 9a is formed so as to cover the entire data line 6a (see FIG. 3), and the presence of the shield layer 400 at a fixed potential. It becomes possible to eliminate the influence of the ring. That is, it is possible to avoid a situation in which the potential of the pixel electrode 9a fluctuates in response to the energization of the data line 6a, and the possibility of causing display unevenness along the data line 6a on the image. Can be reduced. In the present embodiment, since the shield layer 400 is formed in a lattice shape, this is used so that unnecessary capacitance coupling does not occur in the portion where the lower light-shielding film 11a functioning as the scanning line 3a extends. It is possible to suppress. The substantially triangular portion of the shield layer 400 described above can eliminate the influence of capacitive coupling that occurs between the capacitive electrode 300 and the pixel electrode 9a, and this also provides substantially the same operational effects as described above. Will be obtained.

  A third relay layer 402 is formed on the fifth layer as the same film as the shield layer 400. The third relay layer 402 has a function of relaying an electrical connection between the second relay layer 6a2 and the pixel electrode 9a through contact holes 804 and 89 described later. The shield layer 400 and the third relay layer 402 are not continuously formed in a planar shape as in the case of the capacitor electrode 300 and the data line 6a, but they are separated by patterning. Is formed.

  On the other hand, the shield layer 400 and the third relay layer 402 have a two-layer structure in which a lower layer is made of aluminum and an upper layer is made of titanium nitride. Further, as shown in FIG. 4, a nitride film 46 a is formed on the surface of the shield layer 400.

  Above the data line 6a and the shield layer 400 described above, a silicate glass film such as NSG, PSG, BSG, or BPSG, a silicon nitride film, a silicon oxide film, or the like, or preferably a third layer made of NSG. An interlayer insulating layer 43 is formed. In the third interlayer insulating layer 43, a contact hole 803 for electrically connecting the shield layer 400 and the shield layer relay layer 6a1, and a third relay layer 402 and the second relay layer 6a2 are electrically connected. A contact hole 804 for connection is formed.

  In the sixth layer, pixel electrodes 9a are formed in a matrix, and an alignment film 16 is formed on the pixel electrodes 9a. A fourth interlayer insulating layer 44 made of a silicate glass film such as NSG, PSG, BSG, or BPSG, a silicon nitride film, a silicon oxide film, or preferably BPSG is formed under the pixel electrode 9a. In the fourth interlayer insulating layer 44, a contact hole 89 for electrically connecting the pixel electrode 9a and the second relay layer 402 is opened.

  In the present embodiment, as shown in FIG. 4, a nitride film 46 a is formed on the surface of the shield layer 400 in the fifth layer. The nitride film 46a is formed in the same pattern as the shield layer 400 so as to substantially cover the surface of the shield layer 400 as shown in FIGS.

(Overall configuration of liquid crystal device)
The overall configuration of the liquid crystal device according to the embodiment configured as described above will be described with reference to FIGS. 5 is a plan view of the TFT array substrate as viewed from the counter substrate 20 side together with the components formed thereon, and FIG. 6 is a cross-sectional view taken along line HH ′ of FIG.

  5 and 6, in the liquid crystal device of the present embodiment, the TFT array substrate 10 and the counter substrate 20 are disposed to face each other. Liquid crystal 50 is sealed between the TFT array substrate 10 and the counter substrate 20, and the TFT array substrate 10 and the counter substrate 20 are provided with a sealing material provided in a seal region located around the image display region 10a. 52 are bonded to each other.

  The sealing material 52 is made of, for example, an ultraviolet curable resin, a thermosetting resin, or the like, and is cured by ultraviolet rays, heating, or the like in order to bond the two substrates together. If the liquid crystal device in this embodiment is a small liquid crystal device that performs enlarged display as in a projector application, the glass fiber for setting the distance between the two substrates (inter-substrate gap) to a predetermined value is included in the sealing material 52. Alternatively, a gap material (spacer) such as glass beads is dispersed. Alternatively, such a gap material may be included in the liquid crystal layer 50 as long as the liquid crystal device is a large-sized liquid crystal device that performs the same size display as a liquid crystal display or a liquid crystal television.

  In a region outside the sealing material 52, a data line driving circuit 101 and an external circuit connection terminal 102 for driving the data line 6a by supplying an image signal to the data line 6a at a predetermined timing are provided on one side of the TFT array substrate 10. A scanning line driving circuit 104 for driving the scanning line 3a by supplying a scanning signal to the scanning line 3a at a predetermined timing is provided along two sides adjacent to the one side. Yes.

  Needless to say, if the delay of the scanning signal supplied to the scanning line 3a is not a problem, the scanning line driving circuit 104 may be provided on only one side. The data line driving circuit 101 may be arranged on both sides along the side of the image display area 10a.

  On the remaining side of the TFT array substrate 10, a plurality of wirings 105 are provided for connecting the scanning line driving circuits 104 provided on both sides of the image display region 10a. Further, at least one corner portion of the counter substrate 20 is provided with a conductive material 106 for electrical connection between the TFT array substrate 10 and the counter substrate 20.

  In FIG. 6, on the TFT array substrate 10, an alignment film is formed on the pixel electrode 9a after the pixel switching TFT, the scanning line, the data line and the like are formed. On the other hand, in addition to the counter electrode 21, an alignment film is formed on the uppermost layer portion on the counter substrate 20. The liquid crystal layer 50 is made of, for example, a liquid crystal in which one kind or several kinds of nematic liquid crystals are mixed, and takes a predetermined alignment state between the pair of alignment films.

  On the TFT array substrate 10, in addition to the data line driving circuit 101, the scanning line driving circuit 104 and the like, a sampling circuit for applying an image signal to the plurality of data lines 6a at a predetermined timing, and a plurality of data lines A precharge circuit for supplying a precharge signal of a predetermined voltage level in advance to the image signal to 6a, an inspection circuit for inspecting quality, defects, etc. of the electro-optical device during manufacture or at the time of shipment are formed. Also good.

(Manufacturing method of liquid crystal device)
Next, a method for manufacturing the liquid crystal device of this embodiment will be described with reference to FIGS. 7 to 9 as needed. FIG. 7 is a flowchart showing main steps of the manufacturing method of the liquid crystal device of the present embodiment. FIG. 8 is a process plan view of main processes of the method for manufacturing a liquid crystal device of the present embodiment, and FIG. 9 is a process sectional view corresponding to FIG. 7 to 9, the capacitor electrode 300 is an example of the “one film” in the present invention and the dielectric film 75 is an example of the “other film” in the present invention. In the device manufacturing method, the types of films stacked on each other are not limited to the various conductive films and dielectric films mentioned in this embodiment. In addition, if the manufacturing method of the liquid crystal device of this embodiment is applied to a manufacturing method of a semiconductor substrate including a step of sequentially etching a film such as a semiconductor layer laminated on the substrate through the same resist film, a pattern is obtained. It goes without saying that it is possible to manufacture a high-quality semiconductor substrate with reduced abnormalities. In the following, the cleaning is performed after the first conductive film is etched, but the cleaning may be performed after the first conductive film and the dielectric film are etched all at once or sequentially.

  In FIG. 7, a first relay layer 71, which is an example of the “second conductive film” of the present invention, is formed on the insulating film 41 (S1). Next, the dielectric film 75 is formed on the first relay layer 71 (S2). The dielectric film 75 is, for example, a silicon oxide film such as a relatively thin HTO (High Temperature Oxide) film or LTO (Low Temperature Oxide) film having a thickness of about 5 to 200 nm, but other dielectrics such as a silicon nitride film. It may have a multilayer structure in which a film or a plurality of dielectric films are stacked.

  Next, the capacitor electrode 300 which is an example of the “first conductive film” of the present invention is formed on the dielectric film 75 (S3). At this stage, the first relay layer 71, the dielectric film 75, and the capacitor electrode 300 are not patterned into a predetermined shape so as to finally form the storage capacitor 70.

  Next, a resist film 301 is formed on the capacitor electrode 300 (S4). As a result, as shown in FIGS. 8A and 9A, a resist film 301 patterned into a predetermined shape is formed on the capacitor electrode 300.

  Next, the capacitor electrode 300 is etched through the resist film 301 and patterned into a predetermined shape (S5). Here, a gas containing bromine is brought into the etching of the resist film 301. The TFT array substrate 10 that has been subjected to the etching process of the resist film 301 is transferred to the outside of the etching apparatus, and various necessary processes are performed on the TFT array substrate 10. At this time, bromine used for etching the capacitor electrode 300 is combined with potassium in the atmosphere, so that the generated potassium bromide adheres to the resist film 301 as shown in FIGS. 8B and 9B. This is one of the causes of the pattern abnormality of the resist film 301.

  Next, the resist film 301 is cleaned using a cleaning solution to remove foreign matters such as potassium bromide adhering to the resist film 301 (S6). It should be noted that the foreign matter adhering to the resist film 301 is not limited to potassium bromide and varies depending on the conditions of various processes, and therefore the resist film 301 is formed using a cleaning solution suitable for removing these foreign matters from the resist film 301. It is possible to wash. For example, the resist film 301 may be cleaned using a cleaning liquid whose ph value is adjusted so that it can be removed by foreign matters attached to the resist film 301. The cleaning liquid is not limited to a case where a predetermined substance is dissolved in water so as to have a predetermined ph value, and may be pure water or water for cleaning according to this. The cleaning of the resist film 301 is not limited to the case of using a cleaning liquid, and for example, oxygen plasma may be used. Here, since the resist film 301 is often formed using an organic material, the irradiation conditions for irradiating the resist film 301 with oxygen plasma are the constituent materials of the resist film and the foreign matter so as not to damage the resist film 301. It is set individually and specifically in accordance with the characteristics.

  Next, the dielectric film 75 is etched through the cleaned resist film 301 (S7), and the first relay layer 71 therebelow is etched through the resist film 301 (S8).

  Through the above steps, as shown in FIG. 8C and FIG. 9C, the capacitor electrode 300, the dielectric film 75, and the first relay layer 71 are formed in a predetermined shape through the same resist film 301. Can be patterned. In this embodiment, the capacitor electrode 300, the dielectric film 75, and the first relay layer 71 formed thereunder can be sequentially etched through the same resist film 301, so that each time each layer is etched, Each layer can be easily patterned into a predetermined shape as compared with the case of forming a resist film. In addition, in the present embodiment, foreign matter adhering to the resist film 301 can be removed, so that pattern abnormality that occurs when a plurality of layers are etched using the same resist film 301 can be reduced. Thereby, the malfunction of the liquid crystal device due to the pattern abnormality can be reduced, and a high-quality liquid crystal device can be efficiently manufactured.

  As described above, according to the method of manufacturing the liquid crystal device of the present embodiment, the storage capacitor 70 on the TFT array substrate 10 can be formed in a predetermined region so that a sufficient capacity for temporarily maintaining the image signal can be secured. In addition, the storage capacitor 70 can be formed as designed. The inventor of the present application has confirmed that the pattern abnormality has been dramatically reduced by performing the above-described cleaning process of the resist film 301 as compared with the case where the conventional cleaning process is not performed. More specifically, 10,000 or more pattern abnormalities occurred when the resist film 301 was not cleaned per wafer to be used as the TFT array substrate 10, but there was no pattern abnormality due to the cleaning. This inventor has confirmed that it became.

(Electronics)
Next, a case where the above-described liquid crystal device is applied to various electronic devices will be described.

  First, a projector using this liquid crystal device as a light valve will be described. FIG. 10 is a plan view showing a configuration example of the projector. As shown in FIG. 10, a projector 1100 includes a lamp unit 1102 made of a white light source such as a halogen lamp. The projection light emitted from the lamp unit 1102 is separated into three primary colors of RGB by four mirrors 1106 and two dichroic mirrors 1108 arranged in the light guide 1104, and serves as a light valve corresponding to each primary color. The light enters the liquid crystal panels 1110R, 1110B, and 1110G.

  The configurations of the liquid crystal panels 1110R, 1110B, and 1110G are the same as those of the liquid crystal device described above, and are driven by R, G, and B primary color signals supplied from the image signal processing circuit. The light modulated by these liquid crystal panels enters the dichroic prism 1112 from three directions. In this dichroic prism 1112, R and B light is refracted at 90 degrees, while G light travels straight. Accordingly, as a result of the synthesis of the images of the respective colors, a color image is projected onto the screen or the like via the projection lens 1114.

  Here, paying attention to the display images by the liquid crystal panels 1110R, 1110B, and 1110G, the display image by the liquid crystal panel 1110G needs to be horizontally reversed with respect to the display images by the liquid crystal panels 1110R, 1110B.

  Note that since light corresponding to the primary colors R, G, and B is incident on the liquid crystal panels 1110R, 1110B, and 1110G by the dichroic mirror 1108, it is not necessary to provide a color filter.

  Next, an example in which the above-described liquid crystal device is applied to a mobile personal computer will be described. FIG. 11 is a perspective view showing the configuration of the personal computer. In FIG. 11, the computer 1200 includes a main body 1204 provided with a keyboard 1202 and a liquid crystal display unit 1206. The liquid crystal display unit 1206 is configured by adding a backlight to the back surface of the liquid crystal device 1005 described above.

  Further, an example in which the liquid crystal device is applied to a mobile phone will be described. FIG. 12 is a perspective view showing the configuration of this mobile phone. In FIG. 12, a mobile phone 1300 includes a reflective liquid crystal device 1005 together with a plurality of operation buttons 1302. In the reflective liquid crystal device 1005, a front light is provided on the front surface thereof as necessary.

  In addition to the electronic devices described with reference to FIGS. 10 to 12, a liquid crystal television, a viewfinder type, a monitor direct view type video tape recorder, a car navigation device, a pager, an electronic notebook, a calculator, a word processor, a work Examples include a station, a videophone, a POS terminal, and a device equipped with a touch panel. Needless to say, the liquid crystal device of this embodiment can be applied to these various electronic devices.

  The present invention is not limited to the above-described embodiments, and can be appropriately changed without departing from the gist or concept of the invention that can be read from the claims and the entire specification. A device manufacturing method, an electro-optical device, an electronic apparatus, and a semiconductor substrate manufacturing method are also included in the technical scope of the present invention. More specifically, the electro-optical device or the electronic apparatus according to the present invention may be various transmissive types, reflective types, self-luminous devices such as LCOS (Liquid Crystal on Silicon), DMD (Digital Micromirror Device), and organic EL devices. Applicable to type devices.

FIG. 3 is a circuit diagram illustrating an equivalent circuit of various elements, wirings, and the like provided in a plurality of matrix-like pixels that form an image display region in the electro-optical device of the present embodiment. 4 is a plan view of a plurality of pixel groups adjacent to each other on a TFT array substrate on which data lines, scanning lines, pixel electrodes, and the like are formed in the electro-optical device according to the embodiment of the invention. FIG. 3 is a plan view in which these elements are extracted and drawn in order to show the positional relationship among data lines, shield layers, and pixel electrodes in FIG. 2. It is AA 'sectional drawing of FIG. FIG. 5 is a plan view of the TFT array substrate in the electro-optical device according to the embodiment of the present invention, as viewed from the side of the counter substrate together with each component formed thereon. It is HH 'sectional drawing of FIG. It is a flowchart which shows the main processes of the manufacturing method of the liquid crystal device of this embodiment. It is process top view of the main processes of the manufacturing method of the liquid crystal device of this embodiment. FIG. 9 is a process cross-sectional view corresponding to FIG. 8. 1 is a schematic cross-sectional view showing a color liquid crystal projector which is an example of an electronic apparatus of an embodiment. It is a perspective view which shows the structure of the personal computer which is an example of the electronic device of this embodiment. It is a perspective view which shows the structure of the mobile telephone which is an example of the electronic device of this embodiment.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 10 ... TFT array substrate, 70 ... Retention capacitor, 71 ... First relay layer, 75 ... Dielectric film, 300 ... Capacitance electrode, 301 ... Resist film

Claims (6)

An electro-optical device manufacturing method comprising a step of etching the plurality of films through the same resist film on the plurality of films stacked on the substrate,
A first step of etching one of the plurality of films;
A second step of etching another film formed on the lower layer side of the one film among the plurality of films through the resist film;
A third step of cleaning the resist film between the first step and the second step ;
In the first step, the one film is etched using a gas containing bromine, and the resist film is exposed to the atmosphere between the first step and the third step. Method. The method of manufacturing an electro-optical device according to claim 1 , wherein in the third step, the resist film is cleaned using a cleaning liquid containing water. The method of manufacturing an electro-optical device according to claim 1 , wherein in the third step, surfaces of the resist film and the other film are cleaned with oxygen plasma so as not to damage the resist film. The one film is a first conductive film formed in an uppermost layer among the plurality of films,
The other film has a dielectric film in contact with the first conductive film on the lower surface of the first conductive film, and a second conductive film in contact with the dielectric film on the lower surface of the dielectric film,
The first conductive film, the dielectric film, and the second conductive film constitute a storage capacitor that temporarily holds an image signal supplied to the pixel electrode,
In the first step, the resist film by etching the first conductive film through, in the second step, from claim 1, wherein the etching the dielectric layer through the resist film 3 The method of manufacturing an electro-optical device according to any one of the above. The one film is a laminated film of a first conductive film formed in the uppermost layer of the plurality of films and a dielectric film therebelow.
The other film is a second conductive film in contact with the dielectric film on a lower surface of the dielectric film;
The first conductive film, the dielectric film, and the second conductive film constitute a storage capacitor that temporarily holds an image signal supplied to the pixel electrode,
In the first step, the first conductive film and the dielectric film are etched through the resist film, and in the second step, the second conductive film is etched through the resist film. the method of manufacturing an electro-optical device according to any one of claims 1 to 3,. A method for manufacturing a semiconductor substrate comprising a step of etching the plurality of films through the same resist film on the plurality of films stacked on the substrate,
A first step of etching one of the plurality of films;
A second step of etching another film formed on the lower layer side of the one film among the plurality of films through the resist film;
A third step of cleaning the resist film between the first step and the second step ;
In the first step, the one film is etched using a gas containing bromine, and the resist film is exposed to the atmosphere between the first step and the third step. .

Images