JP2011158700A - Electro-optical device and electronic apparatus, and method for manufacturing the electro-optical device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To enhance the light-shielding performance suitably, while preventing generation of a step-like portion and cracks in an electro-optical device, such as, liquid crystal device. <P>SOLUTION: The electro-optical device includes a pair of substrates (10, 20) holding an electro-optical substance (50) therebetween; a switching element (30) provided on one substrate of the pair of substrates; and a light-shielding film (11) provided at a position of the one substrate opposing to at least the switching element and having a first layer (11b); a second layer (11a); and a third layer (11c). In the light shielding film, the first layer is provided above the second layer in a range smaller than the second layer, and the third layer is provided, in a region overlapping the second layer so as to cover the first layer from the upper layer. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a technical field of an electro-optical device such as a liquid crystal display device, an electronic apparatus such as a liquid crystal projector including the electro-optical device, and a method of manufacturing the electro-optical device.

  As this type of electro-optical device, there is one configured by laminating a plurality of conductive films and insulating films on a substrate. Various wirings such as scanning lines and data lines, and various elements such as thin film transistors (TFTs) are formed on the substrate (see, for example, Patent Document 1).

  In the electro-optical device as described above, light leaked during operation may be incident on the thin film transistor, thereby causing a light leakage current. For this reason, for example, Patent Document 2 proposes a technique of improving the light shielding performance by using a light shielding film formed by laminating a metal layer and a barrier layer.

JP-A-6-235939 Japanese Patent No. 3460706

  However, in the technique using the light shielding film in which a plurality of layers described above are stacked, there is a possibility that a relatively large step is formed by forming the light shielding film. That is, there is a large difference in film thickness between a portion where many layers are laminated and a portion where it is not. Such a step causes, for example, a reduction in display image quality and a reduction in device reliability.

  Further, in the above-described technique, a large number of layers are stacked, so that cracks due to stress are likely to occur. Cracks are more likely to occur as the number of stacked layers increases (in other words, as the light shielding performance is increased).

  As described above, even if it is possible to improve the light shielding performance, the above-described technique has a technical problem that various disadvantages are caused accordingly.

  The present invention has been made in view of, for example, the above-described problems, and is capable of suitably improving light-shielding performance while preventing generation of steps and cracks, and manufacture of an electro-optical device. It is an object to provide a method.

  In order to solve the above problems, an electro-optical device of the present invention includes a pair of substrates sandwiching an electro-optical material, a switching element provided on one of the pair of substrates, and at least the one of the one substrates. A light-shielding film having a first layer, a second layer, and a third layer provided at a position facing the switching element, and the first layer is narrower than the second layer in the upper layer of the second layer The third layer is provided in a region overlapping the second layer so as to cover the first layer from the upper layer side.

  The electro-optical device of the present invention includes, for example, an element substrate provided with a pixel electrode and a switching element such as a pixel switching TFT electrically connected to the pixel electrode, and a counter electrode facing the pixel electrode. An electro-optic material such as liquid crystal is sandwiched between the opposite substrate. During the operation of the electro-optical device, an image signal is selectively supplied to the pixel electrode, whereby image display is performed in a pixel region (or image display region) in which a plurality of pixel electrodes are arranged. The image signal is supplied from the data line to the pixel electrode via the semiconductor element at a predetermined timing by turning on and off a switching element electrically connected between the data line and the pixel electrode, for example.

  According to the electro-optical device of the present invention, the light shielding film is provided at a position facing the switching element on the substrate. The light shielding film prevents light leakage current from occurring by preventing light from entering the switching element. By preventing the occurrence of light leakage current, it is possible to reduce the quality of the displayed image and increase the reliability of the apparatus.

  Here, the light-shielding film according to the present invention particularly has three layers of a first layer, a second layer, and a third layer. The first layer is provided in a range narrower than the second layer in the upper layer of the second layer, and the third layer is provided in a region overlapping the second layer so as to cover the first layer from the upper layer side. That is, the first layer, the second layer, and the third layer are laminated in order of the second layer, the first layer, and the third layer from the lower layer side, and the first layer is stacked on the second layer and the third layer. , So as to be covered from the upper layer side and the lower layer side, respectively. For example, the second layer and the third layer are formed in the same region.

  The light shielding film described above includes a portion where the first layer is present and a portion where the first layer is not present. That is, a portion composed of three layers of the first layer, the second layer, and the third layer (hereinafter referred to as “three-layer portion” as appropriate) and a portion composed of two layers of the second layer and the third layer. (Hereinafter referred to as “two-layer portion” as appropriate). Here, the three-layer portion has a higher light shielding performance than the two-layer portion because of the larger number of layers. On the other hand, since the number of laminated layers in the two-layer portion is small, cracks due to stress are less likely to occur than in the three-layer portion. By utilizing such a difference between the three-layer portion and the two-layer portion, it becomes possible to prevent cracks while sufficiently improving the light shielding performance. Specifically, a three-layer portion having a high light-shielding performance may be disposed at a location where relatively high light-shielding performance is required, and a two-layer portion resistant to cracks may be disposed at a location where the light-shielding performance is not so required.

  In addition to the three-layer portion and the two-layer portion described above, the light-shielding film may have a one-layer portion where only one of the second layer and the third layer is formed, but the step in the light-shielding film is reduced. From the viewpoint, it is desirable that the number of one-layer portions is as small as possible.

  As described above, according to the electro-optical device of the present invention, it is possible to suitably improve the light shielding performance while preventing the generation of steps and cracks.

  In one aspect of the electro-optical device of the present invention, the second layer and the third layer are made of a material that is less likely to cause a reaction due to heat than the first layer.

  According to this aspect, the first layer that easily causes a reaction by heat is formed so as to be covered by the second layer and the third layer that hardly cause a reaction by heat from the upper layer side and the lower layer side, respectively. Here, the “reaction by heat” is assumed to be a heat treatment performed when forming the light shielding film, and specific conditions such as temperature are appropriately set depending on what heat treatment is performed. It is a matter to be done.

  According to the above-described light shielding film, the first layer that is likely to cause a reaction due to heat is protected by the second layer and the third layer that are unlikely to cause a reaction due to heat. In the heat treatment, it is possible to prevent the first layer that has caused the thermal reaction from adversely affecting other parts.

  In another aspect of the electro-optical device according to the aspect of the invention, the first layer is provided so as to overlap a drain portion of the switching element when the substrate is viewed in plan.

  According to this aspect, the drain portion where light leakage current is relatively likely to occur among the respective portions of the switching element is shielded from light by the three-layer portion of the light shielding film. In other words, the drain portion is shielded from light by a portion having a high light shielding performance in the light shielding film. Accordingly, it is possible to efficiently suppress the occurrence of light leakage current.

  In another aspect of the electro-optical device of the present invention, the first layer is provided so as to overlap the channel portion of the switching element when the substrate is viewed in plan.

  According to this aspect, the channel portion where the light leakage current is relatively likely to occur among the respective portions of the switching element is shielded from light by the three-layer portion of the light shielding film. That is, the channel portion is shielded from light by a portion of the light shielding film having high light shielding performance. Accordingly, it is possible to efficiently suppress the occurrence of light leakage current.

  In another aspect of the electro-optical device of the present invention, the first layer is provided so as to overlap the semiconductor layer of the switching element when the substrate is viewed in plan.

  According to this aspect, the semiconductor layer serving as a light leakage current generation source is shielded from light by the three-layer portion of the light shielding film. That is, the semiconductor layer is shielded from light at a portion with high light shielding performance in the light shielding film. Accordingly, it is possible to efficiently suppress the occurrence of light leakage current.

  In another aspect of the electro-optical device according to the aspect of the invention, the first layer is provided so as to overlap a scanning line that supplies a scanning signal to the switching element when the substrate is viewed in plan.

  According to this aspect, since the light shielding performance of the scanning line connected to the gate electrode of the switching element can be improved, the generation of the light leakage current can be suppressed more reliably.

  In addition, when the light shielding film is configured to function also as a scanning line, an effect of reducing the resistance of the scanning line can be obtained. That is, a scan line having a low resistance can be realized by using a three-layer portion having a lower resistance than that of the two-layer portion as the number of layers as a scan line.

  In another aspect of the electro-optical device according to the aspect of the invention, the first layer may be opposed to a scanning line that supplies a scanning signal to the switching element and a channel portion of the switching element when the substrate is viewed in plan. The gate electrodes are provided so as to overlap the contact holes that are electrically connected to each other.

  According to this aspect, the light shielding property of the contact hole that electrically connects the scanning line and the gate electrode is improved. Here, the contact hole is provided at a position relatively close to the semiconductor layer in structure. Therefore, the light shielding performance of the semiconductor layer that is the source of the light leakage current is improved to some extent. Accordingly, it is possible to efficiently suppress the occurrence of light leakage current.

  In another aspect of the electro-optical device according to the aspect of the invention, the first layer may be opposed to a scanning line that supplies a scanning signal to the switching element and a channel portion of the switching element when the substrate is viewed in plan. The gate electrodes are provided so as not to overlap the contact holes that are electrically connected to each other.

  According to this aspect, the light shielding film in the portion overlapping the contact hole that electrically connects the scanning line and the gate electrode is a two-layer portion. Here, in particular, the portion overlapping with the contact hole described above is a portion where a failure due to a chemical reaction between the first layer and the gate electrode or a corrosion of the first layer due to, for example, chemical cleaning in a post process is likely to occur. However, as described above, the above-described problem can be solved by using a two-layer light shielding film that overlaps the contact hole.

  In another aspect of the electro-optical device according to the aspect of the invention, the first layer overlaps with a peripheral circuit provided in a peripheral region located around a pixel region in which the switching element is provided when the substrate is viewed in plan. It is provided so as not to become.

  According to this aspect, in the peripheral circuits provided in the peripheral area located around the pixel area, for example, the scanning line driving circuit and the data line driving circuit, the overlapping light shielding films are formed as two layers. Here, unlike the pixel region, the peripheral circuit is a part that is required not to generate cracks rather than the light shielding performance. Therefore, it is possible to realize a more appropriate configuration by disposing the two-layer portion where cracks are less likely to occur than the three-layer portion.

  In another aspect of the electro-optical device according to the aspect of the invention, the first layer includes a fourth layer, a fifth layer provided above the fourth layer, and a sixth layer provided above the fifth layer. The fifth layer includes a material that is less likely to cause a reaction by heat than the fourth layer and the sixth layer.

  According to this aspect, the first layer is configured by laminating the fourth layer, the fifth layer, and the sixth layer in order from the lower layer side. That is, the entire light shielding film is configured by laminating a total of five layers of the second layer, the fourth layer, the fifth layer, the sixth layer, and the third layer in order from the lower layer side. According to such a five-layer structure, each layer can be appropriately reacted in the heat treatment in the subsequent process, and the configuration of the light-shielding film after the heat treatment can be brought into a more appropriate state.

  In order to solve the above problems, an electronic apparatus according to the present invention includes the above-described electro-optical device according to the present invention (including various aspects thereof).

  According to the electronic apparatus of the present invention, the electro-optical device according to the present invention described above is provided, so that the projection display device, the television set, and the mobile phone can display with high reliability and high quality. Various electronic devices such as electronic notebooks, word processors, viewfinder type or monitor direct view type video tape recorders, workstations, videophones, POS terminals and touch panels can be realized. In addition, as an electronic apparatus of the present invention, for example, an electrophoretic device such as electronic paper can be realized.

  In order to solve the above problems, a method for manufacturing an electro-optical device according to the present invention includes a pair of substrates sandwiching an electro-optical material, a switching element provided on one of the pair of substrates, and the one substrate. An electro-optical device comprising: a first layer; and a light-shielding film having a second layer and a third layer that are less likely to cause a reaction due to heat than the first layer. The second layer forming step for forming the second layer, the first layer forming step for forming the first layer on the second layer, and the second layer remaining. A first layer patterning step of patterning the first layer, a third layer forming step of forming the third layer in a region overlapping the second layer so as to cover the first layer, and the light shielding film A heat treatment process for heat treating

  According to the method of manufacturing the electro-optical device of the present invention, when forming the light shielding film provided at the position facing the switching element, first, the second layer that hardly reacts by heat is formed. In the upper layer, a first layer that easily causes a reaction by heat is formed. Then, when the first layer and the second layer are formed, the first layer is patterned by etching or the like. At this time, since the second layer on the lower layer side is patterned so as to remain, the first layer is formed in a narrower range than the second layer. Here, “so as to remain” does not mean that the first layer is not patterned at all, and the first layer may be cut to such an extent that it does not disappear.

  When the first layer is patterned, a third layer that hardly causes a thermal reaction is formed so as to cover the first layer. The third layer is formed in a region overlapping with the second layer. Accordingly, the first layer that easily causes a thermal reaction is configured to be protected by the second layer and the third layer that hardly cause a thermal reaction. The second layer and the third layer are formed in the same region, for example.

  Here, if the first layer is patterned so that the second layer does not remain during the patterning of the first layer, a step due to the light shielding film becomes large. That is, the sharp end face of the light shielding film is increased by the amount of the second layer that is lost, and a steep step is generated. In the present invention, it is possible to reduce the level difference caused by patterning. Considering the case where the second layer is completely eliminated by etching, it is required to secure the light shielding performance only with the third layer. To obtain the same degree of light shielding performance, the third layer needs to be thick. I do not get. If it does so, the laminated structure of 3 layers will become thicker, and it will become easy to generate | occur | produce the crack which is a malfunction resulting from stress. However, in the present invention, by leaving the second layer as much as possible, a laminated light-shielding film with the third layer is realized, and it is not necessary to increase the thickness of the third layer. Therefore, the second layer is not etched unnecessarily, and there is no need to make the third layer thicker, which can be said to be an environmentally friendly manufacturing method.

  The above-described light shielding film composed of the first layer, the second layer, and the third layer is subjected to heat treatment, and the layers react with each other to be alloyed to complete the light shielding film.

  As described above, according to the electro-optical device manufacturing method of the present invention, the above-described electro-optical device of the present invention can be manufactured. Therefore, it is possible to suitably improve the light shielding performance while preventing the generation of steps and cracks.

  In the electro-optical device manufacturing method of the present invention, various aspects similar to the various aspects of the electro-optical device of the present invention described above can be employed.

  In one aspect of the electro-optical device of the present invention, the electro-optical device includes a light-shielding film patterning step of patterning a light-shielding film after all of the first layer, the second layer, and the third layer are formed. This is performed before the film patterning step.

  According to this aspect, when all of the first layer, the second layer, and the third layer are formed, the entire light shielding film is patterned in the light shielding film patterning step. Here, in particular, the heat treatment step is performed before the light shielding film patterning step. That is, when all of the first layer, the second layer, and the third layer are formed, a heat treatment process is performed first, and then a light shielding film patterning process is performed.

  If the heat treatment process is performed after the light shielding film patterning process, there is a risk that an unreacted part of the heat treatment may remain on the end face of the light shielding film. Connection performance cannot be maintained and the reliability of the apparatus is reduced. On the other hand, if the heat treatment step is performed before the light shielding film patterning step as in this embodiment, the unreacted portion as described above can be eliminated or made small enough to be ignored. Therefore, it is possible to manufacture a highly reliable device.

  In another aspect of the method of manufacturing the electro-optical device according to the aspect of the invention, an interlayer insulating film forming step of forming an interlayer insulating film on the light shielding film, and a portion of the interlayer insulating film that overlaps the first layer in a plane And a contact hole forming step of forming a contact hole so that the light shielding film is exposed, and a conductive film forming step of forming a conductive film in the contact hole.

  According to this aspect, the interlayer insulating film and the conductive film are sequentially formed on the light shielding film, and the light shielding film and the conductive film are electrically connected to each other through the contact hole formed in the interlayer insulating film. The contact hole is formed at a position overlapping the first layer of the light shielding film as viewed in plan. That is, the contact hole is provided at a position overlapping the three-layer portion of the light shielding film.

  In this aspect, since the contact hole is provided so as to correspond to the relatively thick three-layer portion in the light shielding film, for example, overetching or the like when forming the contact hole is unlikely to occur. Further, since the first layer easily reacts in the heat treatment step, the contact hole is connected to a sufficiently reacted part in the light shielding film.

  The effect | action and other gain of this invention are clarified from the form for implementing invention demonstrated below.

1 is a plan view showing an overall configuration of an electro-optical device according to a first embodiment. It is the HH 'sectional view taken on the line of FIG. FIG. 3 is an equivalent circuit diagram of various elements, wirings, and the like in a plurality of pixels constituting an image display region of the electro-optical device according to the first embodiment. FIG. 3 is a plan view illustrating a plurality of adjacent pixel units in the electro-optical device according to the first embodiment. FIG. 5 is a cross-sectional view taken along line A-A ′ of FIG. 4. FIG. 3 is a cross-sectional view illustrating a stacked structure of scanning lines in the electro-optical device according to the first embodiment. FIG. 6 is a cross-sectional view illustrating a stacked structure of scanning lines in an electro-optical device according to a comparative example. FIG. 6 is a process cross-sectional view (part 1) illustrating the manufacturing process of the electro-optical device according to the first embodiment in order. FIG. 6 is a process cross-sectional view (part 2) illustrating the manufacturing process of the electro-optical device according to the first embodiment in order. FIG. 10 is a process cross-sectional view (part 3) illustrating the manufacturing process of the electro-optical device according to the first embodiment in order. FIG. 10 is a process cross-sectional view (part 1) illustrating the manufacturing process of the electro-optical device according to the comparative example step by step; FIG. 12 is a process cross-sectional view (part 2) illustrating the manufacturing process of the electro-optical device according to the comparative example step by step. FIG. 10 is a process cross-sectional view (part 4) illustrating the manufacturing process of the electro-optical device according to the first embodiment in order. FIG. 10 is a process cross-sectional view (part 5) illustrating the manufacturing process of the electro-optical device according to the first embodiment in order. FIG. 11 is a process cross-sectional view (part 6) illustrating the manufacturing process of the electro-optical device according to the first embodiment in order. FIG. 12 is a process cross-sectional view (part 3) illustrating the manufacturing process of the electro-optical device according to the comparative example step by step. FIG. 14 is a process cross-sectional view (part 4) illustrating the manufacturing process of the electro-optical device according to the comparative example step by step; FIG. 11 is a process cross-sectional view (part 7) illustrating the manufacturing process of the electro-optical device according to the first embodiment in order. FIG. 11 is a process cross-sectional view (part 8) illustrating the manufacturing process of the electro-optical device according to the first embodiment in order. FIG. 6 is a plan view showing a plurality of adjacent pixel units in an electro-optical device according to a second embodiment. FIG. 10 is a plan view illustrating a plurality of adjacent pixel units in an electro-optical device according to a third embodiment. FIG. 10 is a cross-sectional view illustrating a stacked structure of scanning lines in an electro-optical device according to a fourth embodiment. FIG. 10 is a cross-sectional view conceptually showing a reaction during a heat treatment process for scanning lines in an electro-optical device according to a fourth embodiment. It is a top view which shows the structure of the projector which is an example of the electronic device to which the electro-optical apparatus is applied.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

<Electro-optical device>
The electro-optical device according to this embodiment will be described with reference to FIGS. In the following embodiment, an active matrix driving type liquid crystal device with a built-in driving circuit will be described as an example of the electro-optical device of the present invention.

<First Embodiment>
First, the overall configuration of the electro-optical device according to the first embodiment will be described with reference to FIGS. 1 and 2. FIG. 1 is a plan view showing the overall configuration of the electro-optical device according to this embodiment, and FIG. 2 is a cross-sectional view taken along the line HH ′ of FIG.

  1 and 2, in the electro-optical device according to the present embodiment, a TFT array substrate 10 and a counter substrate 20 are disposed to face each other. The TFT array substrate 10 is, for example, a transparent substrate such as a quartz substrate or a glass substrate, a silicon substrate, or the like. The counter substrate 20 is a transparent substrate such as a quartz substrate or a glass substrate. Between the TFT array substrate 10 and the counter substrate 20, a liquid crystal layer 50, which is an example of the “electro-optical material” of the present invention, is sealed. The liquid crystal layer 50 is made of, for example, a liquid crystal in which one or several types of nematic liquid crystals are mixed, and takes a predetermined alignment state between a pair of alignment films.

  The TFT array substrate 10 and the counter substrate 20 are bonded to each other by a sealing material 52 provided in a sealing region located around the image display region 10a provided with a plurality of pixel electrodes.

  The sealing material 52 is made of, for example, an ultraviolet curable resin, a thermosetting resin, or the like for bonding the two substrates, and is applied on the TFT array substrate 10 in the manufacturing process and then cured by ultraviolet irradiation, heating, or the like. It is. In the sealing material 52, a gap material such as glass fiber or glass beads for dispersing the distance between the TFT array substrate 10 and the counter substrate 20 (that is, the inter-substrate gap) to a predetermined value is dispersed. Note that the gap material may be arranged in the image display region 10a or a peripheral region located around the image display region 10a in addition to or instead of the material mixed in the seal material 52.

  A light-shielding frame light-shielding film 53 that defines the frame area of the image display area 10a is provided on the counter substrate 20 side in parallel with the inside of the seal area where the sealing material 52 is disposed. A part or all of the frame light shielding film 53 may be provided as a built-in light shielding film on the TFT array substrate 10 side.

  A data line driving circuit 101 and an external circuit connection terminal 102 are provided along one side of the TFT array substrate 10 in a region located outside the sealing region in which the sealing material 52 is disposed in the peripheral region. The scanning line driving circuit 104 is provided along two sides adjacent to the one side so as to be covered with the frame light shielding film 53. Further, in order to connect the two scanning line driving circuits 104 provided on both sides of the image display region 10 a in this way, a plurality of the pixel lines are covered along the remaining side of the TFT array substrate 10 and covered with the frame light shielding film 53. Wiring 105 is provided.

  In a region facing the four corners of the counter substrate 20 on the TFT array substrate 10, vertical conduction terminals 106 for connecting the two substrates with a vertical conduction material are arranged. Thus, electrical conduction can be established between the TFT array substrate 10 and the counter substrate 20.

  In FIG. 2, on the TFT array substrate 10, a layered structure is formed in which pixel switching TFTs as drive elements, wiring lines such as scanning lines and data lines are formed. Although the detailed configuration of this laminated structure is not shown in FIG. 2, pixel electrodes 9a made of a transparent material such as ITO (Indium Tin Oxide) are provided on the laminated structure with a predetermined pattern for each pixel. It is formed in an island shape.

  The pixel electrode 9 a is formed in the image display area 10 a on the TFT array substrate 10 so as to face the counter electrode 21. On the surface of the TFT array substrate 10 facing the liquid crystal layer 50, that is, on the pixel electrode 9a, an alignment film 16 is formed so as to cover the pixel electrode 9a.

  A light shielding film 23 is formed on the surface of the counter substrate 20 facing the TFT array substrate 10. For example, the light shielding film 23 is formed in a lattice shape when viewed in plan on the facing surface of the facing substrate 20. In the counter substrate 20, a non-opening area is defined by the light shielding film 23, and an area partitioned by the light shielding film 23 is an opening area through which light emitted from, for example, a projector lamp or a direct viewing backlight is transmitted. The light shielding film 23 may be formed in a stripe shape, and the non-opening region may be defined by the light shielding film 23 and various components such as data lines provided on the TFT array substrate 10 side.

  On the light shielding film 23, a counter electrode 21 made of a transparent material such as ITO is formed so as to face the plurality of pixel electrodes 9a. Further, in order to perform color display in the image display area 10a, a color filter (not shown in FIG. 2) may be formed on the light shielding film 23 in an area including a part of the opening area and the non-opening area. Good. An alignment film 22 is formed on the counter electrode 21 on the counter surface of the counter substrate 20.

  In addition to the above-described drive circuits such as the data line drive circuit 101 and the scanning line drive circuit 104, the image signal on the image signal line is sampled on the TFT array substrate 10 shown in FIGS. Sampling circuit that supplies lines, precharge circuit that supplies pre-charge signals of a predetermined voltage level to multiple data lines in advance of image signals, inspection of quality, defects, etc. of the electro-optical device during production or shipment An inspection circuit or the like may be formed.

  Next, an electrical configuration of the pixel portion of the electro-optical device according to the present embodiment will be described with reference to FIG. FIG. 3 is an equivalent circuit diagram of various elements, wirings, and the like in a plurality of pixels formed in a matrix forming the image display area of the electro-optical device according to this embodiment.

  In FIG. 3, a pixel electrode 9a and a TFT 30 are formed in each of a plurality of pixels formed in a matrix that forms the image display region 10a. The TFT 30 is electrically connected to the pixel electrode 9a, and performs switching control of the pixel electrode 9a during the operation of the electro-optical device according to the present embodiment. The data line 6a to which the image signal is supplied is electrically connected to the source of the TFT 30. The image signals S1, S2,..., Sn to be written to the data lines 6a may be supplied line-sequentially in this order, or may be supplied for each group to a plurality of adjacent data lines 6a. May be.

  The scanning line 11 is electrically connected to the gate of the TFT 30, and the electro-optical device according to the present embodiment pulses the scanning signals G 1, G 2,. Gm is applied in this order in a line sequential manner. The pixel electrode 9a is electrically connected to the drain of the TFT 30, and the image signal S1, S2,... Supplied from the data line 6a is closed by closing the switch of the TFT 30 serving as a switching element for a certain period. Sn is written at a predetermined timing. A predetermined level of image signals S1, S2,..., Sn written in the liquid crystal as an example of the electro-optical material via the pixel electrode 9a is held for a certain period with the counter electrode formed on the counter substrate. The

  The liquid crystal constituting the liquid crystal layer 50 (see FIG. 2) modulates light and enables gradation display by changing the orientation and order of the molecular assembly depending on the applied voltage level. For example, in the normally white mode, the transmittance for incident light is reduced according to the voltage applied in units of each pixel. In the normally black mode, the transmittance is applied in units of each pixel. As a result, the transmittance for incident light is increased, and light having a contrast corresponding to an image signal is emitted from the electro-optical device as a whole.

  In order to prevent the image signal held here from leaking, a storage capacitor 70 is added in parallel with the liquid crystal capacitor formed between the pixel electrode 9a and the counter electrode 21 (see FIG. 2). The storage capacitor 70 is a capacitive element that functions as a storage capacitor that temporarily holds the potential of each pixel electrode 9a in response to supply of an image signal. One electrode of the storage capacitor 70 is electrically connected to the drain of the TFT 30 in parallel with the pixel electrode 9a, and the other electrode is electrically connected to the capacitor line 300 having a fixed potential so as to have a constant potential. ing. According to the storage capacitor 70, the potential holding characteristic of the pixel electrode 9a is improved, and the display characteristics such as improvement of contrast and reduction of flicker can be improved.

  Next, a specific configuration of the pixel portion that realizes the above-described operation will be described with reference to FIGS. FIG. 4 is a plan view showing a plurality of adjacent pixel portions in the electro-optical device according to the first embodiment, and FIG. 5 is a cross-sectional view taken along the line A-A ′ in FIG. 4. In FIGS. 4 and 5, the scale of each layer / member is different for each layer / member to have a size that can be recognized on the drawing. In FIG. 4, for convenience of explanation, among the layers shown in FIG. 5, layers above the TFT 30 are omitted.

  In FIG. 4, the scanning lines 11 and the data lines 6 a are provided on the TFT array substrate 10 so as to cross each other. More specifically, the scanning line 11 extends along the X direction, and the data line 6a extends along the Y direction. A pixel switching TFT 30 is provided at each of the locations where the scanning line 11 and the data line 6a intersect each other.

  The scanning lines 11, the data lines 6a, and the TFTs 30 are viewed in a plane on the TFT array substrate 10 and the aperture regions of the pixels corresponding to the pixel electrodes 9a (that is, light that actually contributes to display is displayed in each pixel). It is disposed in a non-opening region surrounding a region to be transmitted or reflected).

  4 and 5, the TFT 30 as an example of the “switching element” of the present invention includes the semiconductor layer 1a and the gate electrode 3b.

  The semiconductor layer 1a is made of, for example, polysilicon, and has a channel region 1a ′ having a channel length along the Y direction, a data line side LDD region 1b, a pixel electrode side LDD region 1c, a data line side source / drain region 1d, and a pixel electrode side. It consists of a source / drain region 1e. That is, the TFT 30 has an LDD structure. The channel region 1a 'here is an example of the "channel portion" in the present invention, and the pixel electrode side source / drain region 1e is an example of the "drain portion" in the present invention.

  The data line side source / drain region 1d and the pixel electrode side source / drain region 1e are formed substantially in mirror symmetry along the Y direction with respect to the channel region 1a '. The data line side LDD region 1b is formed between the channel region 1a 'and the data line side source / drain region 1d. The pixel electrode side LDD region 1c is formed between the channel region 1a 'and the pixel electrode side source / drain region 1e. The data line side LDD region 1b, the pixel electrode side LDD region 1c, the data line side source / drain region 1d, and the pixel electrode side source / drain region 1e are formed by implanting impurities into the semiconductor layer 1a by an impurity implantation such as an ion implantation method. This is an impurity region. The data line side LDD region 1b and the pixel electrode side LDD region 1c are formed as low concentration impurity regions with less impurities than the data line side source / drain region 1d and the pixel electrode side source / drain region 1e, respectively. According to such an impurity region, when the TFT 30 is not operating, the off-current flowing between the source region and the drain region can be reduced, and a decrease in the on-current flowing when the TFT 30 is operating can be suppressed. The TFT 30 preferably has an LDD structure. However, the TFT 30 may have an offset structure in which no impurity implantation is performed in the data line side LDD region 1b and the pixel electrode side LDD region 1c. A self-alignment type in which the data line side source / drain region and the pixel electrode side source / drain region are formed by implanting the concentration may be used.

  4 and 5, the gate electrode 3b is made of, for example, conductive polysilicon. The gate electrode 3b is electrically connected to the scanning line 11 through contact holes 34a and 34b, and is disposed so as to overlap the channel region 1a 'in the semiconductor layer 1a. The gate electrode 3b and the semiconductor layer 1a are insulated by the gate insulating film 2a.

  4 and 5, the scanning line 11 is provided on the lower layer side of the TFT 30 on the TFT array substrate 10 with the base insulating film 12 interposed therebetween. The scanning line 11 is configured by stacking refractory metals such as Ti (titanium), for example. The scanning line 11 is an example of the “light-shielding film” of the present invention, such as light reflected from the back surface of the TFT array substrate 10 or light emitted from another liquid crystal device by a multi-plate projector or the like and penetrating through the composite optical system. The channel region 1a ′ of the TFT 30 and its periphery are shielded from the return light that enters the device from the TFT array substrate 10 side.

  In particular, the scanning line 11 of the present invention has a region where the first layer 11b located in the middle of the laminated structure exists and a region where it does not exist. A specific stacked structure of the scanning lines 11 will be described in detail later.

  In FIG. 5, the base insulating film 12 is formed on the entire surface of the TFT array substrate 10 in addition to the function of insulating the TFT 30 from the scanning line 11, so that the surface of the TFT array substrate 10 is roughened or cleaned during polishing. It has a function of preventing deterioration of the characteristics of the pixel switching TFT 30 due to dirt remaining later.

  In FIG. 5, a storage capacitor 70 is provided on the upper layer side of the TFT 30 on the TFT array substrate 10 via the first interlayer insulating film 41. The storage capacitor 70 is formed by disposing the lower capacitor electrode 71 and the upper capacitor electrode 300 to face each other with the dielectric film 75 interposed therebetween.

  The upper capacitor electrode 300 is a fixed potential side capacitor electrode that is electrically connected to a constant potential source and maintained at a fixed potential. The upper capacitor electrode 300 is formed of a non-transparent metal film containing a metal or alloy such as Al (aluminum) or Ag (silver), for example, and functions as an upper light-shielding film (built-in light-shielding film) that shields the TFT 30. To do. The upper capacitor electrode 300 includes, for example, at least one of refractory metals such as Ti, Cr, W, Ta, Mo, and Pd, a metal simple substance, an alloy, a metal silicide, a polysilicide, and the like laminated. You may be comprised from things. In this case, the function of the upper capacitor electrode 300 as a built-in light shielding film can be enhanced.

  The lower capacitor electrode 71 is made of, for example, conductive polysilicon, and functions as a pixel potential side capacitor electrode electrically connected to the pixel electrode side source / drain region 1e of the TFT 30 and the pixel electrode 9a. More specifically, the lower capacitor electrode 71 is electrically connected to the pixel electrode side source / drain region 1 e through the contact hole 83 and electrically connected to the relay layer 93 through the contact hole 84. Yes. Further, the relay layer 93 is electrically connected to the pixel electrode 9 a through the contact hole 85. That is, the lower capacitor electrode 71 relays the electrical connection between the pixel electrode side source / drain region 1e and the pixel electrode 9a together with the relay layer 93. The lower capacitor electrode 71 has a function as a light absorption layer or a light shielding film disposed between the upper capacitor electrode 300 as an upper light shielding film and the TFT 30 in addition to a function as a pixel potential side capacitance electrode.

  The dielectric film 75 is, for example, a single layer structure or a multilayer structure formed of a silicon oxide (SiO 2) film such as an HTO (High Temperature Oxide) film, an LTO (Low Temperature Oxide) film, or a silicon nitride (SiN) film. have.

  In FIG. 5, a data line 6 a and a relay layer 93 are provided on the upper layer side of the storage capacitor 70 on the TFT array substrate 10 via the second interlayer insulating film 42.

  The data line 6a is electrically connected to the data line side source / drain region 1d of the semiconductor layer 1a through a contact hole 81 penetrating the first interlayer insulating film 41 and the second interlayer insulating film. The data line 6a and the inside of the contact hole 81 are made of, for example, an Al (aluminum) -containing material such as Al—Si—Cu or Al—Cu, Al alone, or a multilayer film including an Al layer and a TiN layer. The data line 6a also has a function of shielding the TFT 30 from light.

  The relay layer 93 is formed on the second interlayer insulating film 42 in the same layer as the data line 6a. For the data line 6a and the relay layer 93, a thin film made of a conductive material such as a metal film is formed on the second interlayer insulating film 42 by using a thin film forming method, and the thin film is partially removed. It forms in the state mutually spaced apart by patterning. Therefore, since the data line 6a and the relay layer 93 can be formed in the same process, the manufacturing process of the device can be simplified.

  In FIG. 5, the pixel electrode 9a is formed on the upper layer side through the third interlayer insulating film 43 relative to the data line 6a. The pixel electrode 9a is electrically connected to the pixel electrode side source / drain region 1e of the semiconductor layer 1a through the lower capacitor electrode 71, the contact holes 83, 84 and 85, and the relay layer 93. The contact hole 85 is formed by depositing a conductive material constituting the pixel electrode 9a such as ITO on the inner wall of a hole formed so as to penetrate the interlayer insulating layer 43. Although not shown here, an alignment film subjected to a predetermined alignment process such as a rubbing process is provided on the upper surface of the pixel electrode 9a.

  The configuration of the pixel portion described above is common to each pixel portion as shown in FIG. Such pixel portions are periodically formed in the image display area 10a (see FIG. 1).

  Next, a specific configuration of the scanning lines in the electro-optical device according to the present embodiment will be described with reference to FIGS. 6 and 7 in addition to FIG. FIG. 6 is a cross-sectional view illustrating a stacked structure of scanning lines in the electro-optical device according to the first embodiment, and FIG. 7 is a cross-sectional view illustrating a stacked structure of scanning lines in the electro-optical device according to the comparative example. is there.

  In FIG. 6, the scanning line 11 of the electro-optical device according to this embodiment includes a first layer 11b, a second layer 11a that covers the first layer 11b from the lower layer side, and a third layer 11c that covers the first layer from the upper layer side. And is configured. Since the scanning line 11 according to the present embodiment includes three layers, the light shielding performance is higher than that of a single layer.

  The first layer 11b includes a metal such as titanium, for example. As shown in FIG. 4, the pixel electrode side source / drain region 1e and the channel region 1a ′, the scanning line 11 and the gate electrode in the semiconductor layer 1a. The contact holes 34a and 34b that electrically connect 3b are arranged so as to overlap.

  The second layer 11a and the third layer 11c are configured to include, for example, tungsten silicide. As shown in FIG. 4, in addition to the location where the first layer 11b is disposed, the data line side in the semiconductor layer 1a It is also provided at a position connecting the source / drain regions 1d and the TFTs 30 functioning as the scanning lines 11. Note that the second layer 11a and the third layer 11c according to the present embodiment are formed in the same region.

  As described above, in the scanning line 11 according to the present embodiment, the first layer 11b is provided in a narrower range than the second layer 11a and the third layer 11c. Thereby, the scanning line 11 is configured to have a three-layer portion where the first layer 11b, the second layer 11a and the third layer 11c overlap, and a two-layer portion where the second layer 11a and the third layer 11c overlap. Yes. Further, the end surface of the first layer 11b is configured to be covered with the third layer 11c as shown in FIG.

  As in the comparative example shown in FIG. 7, in the scanning line 11 in which the first layer 11b, the second layer 11a, and the third layer 11c having the same size are stacked, the end surface of the first layer 11b is exposed. Become. Here, in particular, the first layer 11b includes a material that easily causes a reaction due to heat as compared with the second layer 11a and the third layer 11c. There is a risk that.

  On the other hand, as described above, the scanning line 11 according to the present embodiment is configured such that the end surface of the first layer 11b is covered with the third layer 11c, thereby preventing an unexpected reaction in heat treatment or the like. can do. That is, the first layer 11b is configured to be protected by the second layer 11a and the third layer 11c.

  In the scanning line 11 according to the present embodiment, the pixel electrode side source / drain region 1e and the channel region 1a ′ that require relatively high light shielding performance, and the contact hole 34a that electrically connects the scanning line 11 and the gate electrode 3b. And in the part which overlaps 34b, the 3 layer part (namely, part in which the 1st layer 11b exists) with high light-shielding performance is arrange | positioned. On the other hand, a two-layer part (that is, the first layer 11b does not exist) is disposed in another part where high light-shielding performance is not required. Although the two-layer portion is inferior in light shielding performance to the three-layer portion, it is stronger than the three-layer portion against cracking due to stress. Therefore, if the three-layer portion and the two-layer portion are arranged as described above, the light shielding performance can be suitably improved while preventing cracks.

  Next, a method for manufacturing the above electro-optical device will be described with reference to FIGS. FIGS. 8 to 10, FIGS. 13 to 15, 18 and 19 are process cross-sectional views sequentially showing the manufacturing process of the electro-optical device according to the first embodiment. 11 and 12 and FIGS. 16 and 17 are process cross-sectional views sequentially showing the manufacturing process of the electro-optical device according to the comparative example. In the following, the manufacturing process of the scanning line portion characteristic of the present embodiment will be described in detail, and the other manufacturing processes will be omitted as appropriate.

  In FIG. 8, in the manufacturing process of the electro-optical device according to the present embodiment, when the scanning line 11 is formed, first, the second layer 11a is formed, and the first layer 11b is formed thereon.

  In FIG. 9, when the second layer 11a and the first layer 11b are formed, a resist 510 is disposed on a portion desired to remain in the first layer 11b, and a portion exposed from the resist 510 of the first layer 11b is patterned by etching. Is done. At this time, the second layer 11a under the first layer 11b is etched so as to remain.

  In FIG. 10, when the etching is completed, the patterned first layer 11a is laminated on the second layer 11a. If the third layer 11c is formed from above, a scanning line 11b having a three-layer structure as shown in FIG. 6 is formed.

  In FIG. 11, if the second layer 11a is not left during the etching shown in FIG. 9, the end surface of the first layer 11b is covered with the third layer 11c as shown in FIG. Although it is possible, a large step is generated as compared with the case shown in FIG. That is, a new level difference is generated as much as the second layer 11a is lost. In the manufacturing method according to the present embodiment, the level difference caused by patterning can be reduced. Further, since the second layer 11a is not etched unnecessarily, it can be said that the manufacturing method is environmentally friendly.

  In FIG. 13, when the first layer 11b, the second layer 11a, and the third layer 11c are stacked, the scanning line 11 is subjected to a heat treatment that applies heat of 600 degrees, for example. As a result, the first layer 11b, which is likely to cause a reaction due to heat, reacts with the surrounding second layer 11a and third layer 11c to form an alloy (see the shaded portion in the figure).

  14 and 15, when the heat treatment step is completed, a resist 520 is provided on the scanning line, and a portion exposed from the resist 520 is patterned by etching or the like. As a result, the scanning line 11 has a planar shape as shown in FIG. Such patterning of the entire scanning line 11 can be performed before the heat treatment step, but is preferably performed after the heat treatment step.

  As shown in FIG. 16, in the case where the end face of the first layer 11b is partially exposed by patterning of the entire scanning line 11, if heat treatment is performed after patterning, a reaction due to the heat treatment is caused as shown in FIG. There is a risk that the end face not exposed will be exposed. That is, the first layer 11b that is not alloyed may be exposed.

  On the other hand, in the manufacturing method according to the present embodiment, as described above, since the entire scanning line 11 is patterned after the heat treatment step, the end surface of the first layer 11b is temporarily shown in FIG. Even if is exposed, the exposed end face is alloyed. Therefore, it is possible to prevent the end face exposed in the heat treatment process from causing an unexpected reaction.

  In FIG. 18, when the scanning line 11 is completed, a base insulating film 12 is formed in the upper layer of the scanning line 11. Then, as shown in FIG. 19, a contact hole 34 is provided in the base insulating film 12. On the base insulating film 12, a semiconductor layer 1a and a gate insulating film 2a (see FIG. 5) (not shown) are formed, and then a gate electrode 3b is formed. The gate electrode 3 b is electrically connected to the scanning line 11 through the contact hole 34.

  As described above, according to the electro-optical device and the method of manufacturing the electro-optical device according to the present embodiment, it is possible to suitably improve the light shielding performance while suppressing various inconveniences such as steps and cracks. It is.

Second Embodiment
Next, an electro-optical device according to a second embodiment will be described with reference to FIG. FIG. 20 is a plan view showing a plurality of adjacent pixel portions in the electro-optical device according to the second embodiment. The second embodiment differs from the first embodiment described above in the configuration of a part of the scanning line, and the other configurations are substantially the same. Therefore, in the second embodiment, portions different from the first embodiment will be described in detail, and descriptions of other overlapping portions will be omitted as appropriate.

  20, in the electro-optical device according to the second embodiment, the portion where the first layer 11b is present in the scanning line 11 is the data line in the semiconductor layer 1a as compared with the first embodiment (see FIG. 4) described above. The region extends to a portion functioning as a scanning line between the side source / drain region 1 d and each TFT 30.

  According to the scanning line 11 according to the second embodiment, the entire semiconductor layer 1a serving as a source of light leakage current is shielded by the three-layer portion of the scanning line 11. That is, the semiconductor layer 1a is shielded from light at a portion of the scanning line 11 where the light shielding performance is high. Accordingly, it is possible to efficiently suppress the occurrence of light leakage current.

  In addition, according to the scanning line 11 according to the second embodiment, since the portion connecting the TFTs 30 is a three-layer portion, the effect of reducing the resistance of the scanning line 11 can also be obtained. That is, the low resistance scanning line 11 can be realized by using the three-layer portion having a lower resistance than the two-layer portion due to the large number of layers.

  As described above, according to the electro-optical device according to the second embodiment, it is possible to obtain higher light shielding performance and lower resistance of the scanning line 11 as compared with the first embodiment described above. .

<Third Embodiment>
Next, an electro-optical device according to a third embodiment will be described with reference to FIG. FIG. 20 is a plan view showing a plurality of adjacent pixel portions in the electro-optical device according to the third embodiment. The third embodiment differs from the second embodiment described above in the configuration of a part of the scanning line, and the other configurations are substantially the same. For this reason, in 3rd Embodiment, a different part from 2nd Embodiment is demonstrated in detail, and description is abbreviate | omitted suitably about another overlapping part.

  In FIG. 21, the electro-optical device according to the third embodiment overlaps with the contact holes 34a and 34b that connect the scanning line 11 and the gate electrode 3b to each other as compared with the second embodiment (see FIG. 20). Is configured such that the first layer 11b does not exist. That is, the portions in the contact holes 34a and 34b in the scanning line 11 are two-layer portions.

  According to the inventor's research, the portions overlapping the contact holes 34a and 34b described above are places where defects due to, for example, chemical cleaning and chemical reaction in subsequent processes are likely to occur. However, as described above, if the scanning line 11 that overlaps the contact holes 34a and 34b is a two-layer portion, the above-described problems can be solved.

  As described above, according to the electro-optical device according to the second embodiment, in addition to the effect according to the second embodiment described above, it is possible to obtain an effect that various problems in the manufacturing process can be eliminated. .

<Fourth embodiment>
Next, an electro-optical device according to a fourth embodiment will be described with reference to FIGS. FIG. 22 is a cross-sectional view showing a stacked structure of scanning lines in the electro-optical device according to the fourth embodiment, and FIG. 23 is a reaction at the time of a heat treatment process of the scanning lines in the electro-optical device according to the fourth embodiment. FIG. The fourth embodiment is different from the first to third embodiments described above in the stacked structure of the scanning lines, and the other configurations are generally the same. Therefore, in the fourth embodiment, portions different from the first to third embodiments will be described in detail, and descriptions of other overlapping portions will be omitted as appropriate.

  In FIG. 22, in the electro-optical device according to the fourth embodiment, the first layer 11b in the scanning line 11 includes three layers, that is, a fourth layer 11d, a fifth layer 11e, and a sixth layer 11f. That is, the scanning line 11 is configured by laminating a total of five layers of the second layer 11a, the fourth layer 11b, the fifth layer 11e, the sixth layer 11f, and the third layer 11c in order from the lower layer side.

  In FIG. 23, according to the five-layer structure described above, each layer can be appropriately reacted in the heat treatment in the subsequent process, and the configuration of the light-shielding film after the heat treatment can be brought into a more appropriate state. Specifically, it is possible to prevent an unreacted portion from remaining in the central portion of the first layer 11b.

  As described above, according to the electro-optical device according to the fourth embodiment, it is possible to cause each layer of the scanning line 11 to react more suitably in the heat treatment step.

<Electronic equipment>
Next, the case where the liquid crystal device which is the above-described electro-optical device is applied to various electronic devices will be described. FIG. 24 is a plan view showing a configuration example of the projector. Hereinafter, a projector using the liquid crystal device as a light valve will be described.

  As shown in FIG. 24, a lamp unit 1102 including a white light source such as a halogen lamp is provided inside the projector 1100. The projection light emitted from the lamp unit 1102 is separated into three primary colors of RGB by four mirrors 1106 and two dichroic mirrors 1108 arranged in the light guide 1104, and serves as a light valve corresponding to each primary color. The light enters the liquid crystal panels 1110R, 1110B, and 1110G.

  The configurations of the liquid crystal panels 1110R, 1110B, and 1110G are the same as those of the liquid crystal device described above, and are driven by R, G, and B primary color signals supplied from the image signal processing circuit. The light modulated by these liquid crystal panels enters the dichroic prism 1112 from three directions. In the dichroic prism 1112, R and B light is refracted at 90 degrees, while G light travels straight. Therefore, as a result of the synthesis of the images of the respective colors, a color image is projected onto the screen or the like via the projection lens 1114.

  Here, paying attention to the display images by the liquid crystal panels 1110R, 1110B, and 1110G, the display image by the liquid crystal panel 1110G needs to be horizontally reversed with respect to the display images by the liquid crystal panels 1110R and 1110B.

  Since light corresponding to the primary colors R, G, and B is incident on the liquid crystal panels 1110R, 1110B, and 1110G by the dichroic mirror 1108, it is not necessary to provide a color filter.

  In addition to the electronic devices described with reference to FIG. 24, mobile personal computers, mobile phones, liquid crystal televisions, viewfinder type, monitor direct-view type video tape recorders, car navigation devices, pagers, electronic Examples include notebooks, calculators, word processors, workstations, videophones, POS terminals, and devices with touch panels. Needless to say, the present invention can be applied to these various electronic devices.

  In addition to the liquid crystal devices described in the above embodiments, the present invention includes a reflective liquid crystal device (LCOS), a plasma display (PDP), a field emission display (FED, SED), an organic EL display, and a digital micromirror device. (DMD), electrophoresis apparatus and the like are also applicable.

  The present invention is not limited to the above-described embodiments, and can be appropriately changed without departing from the spirit or idea of the invention that can be read from the claims and the entire specification, and an electro-optical device with such a change. In addition, an electronic apparatus including the electro-optical device and a method for manufacturing the electro-optical device are also included in the technical scope of the present invention.

  DESCRIPTION OF SYMBOLS 1a ... Semiconductor layer, 3b ... Gate electrode, 6a ... Data line, 9a ... Pixel electrode, 10 ... TFT array substrate, 10a ... Image display area, 11 ... Scanning line, 11a ... Second layer, 11b ... First layer, 11c 3rd layer, 11d 4th layer, 11e 5th layer, 11f ... 6th layer, 12 ... Base insulating film, 20 ... Counter substrate, 30 ... TFT, 50 ... Liquid crystal layer, 70 ... Storage capacitor, 93 ... Relay layer, 510, 520 ... resist

Claims (14)

A pair of substrates sandwiching an electro-optic material;
A switching element provided on one of the pair of substrates;
A light-shielding film having a first layer, a second layer, and a third layer provided at a position facing at least the switching element of the one substrate;
The first layer is provided in a range narrower than the second layer in the upper layer of the second layer,
The electro-optical device, wherein the third layer is provided in a region overlapping the second layer so as to cover the first layer from the upper layer side.   The electro-optical device according to claim 1, wherein the second layer and the third layer are made of a material that is less likely to cause a reaction by heat than the first layer.   3. The electro-optical device according to claim 1, wherein the first layer is provided so as to overlap with a drain portion of the switching element when the substrate is viewed in a plan view.   4. The electro-optical device according to claim 1, wherein the first layer is provided so as to overlap with a channel portion of the switching element when the substrate is seen in a plan view. .   5. The electro-optical device according to claim 1, wherein the first layer is provided so as to overlap a semiconductor layer of the switching element when the substrate is viewed in a plan view. .   The said 1st layer is provided so that it may overlap with the scanning line which supplies a scanning signal to the said switching element, seeing the said board | substrate planarly. The electro-optical device described.   The first layer electrically connects a scanning line for supplying a scanning signal to the switching element and a gate electrode provided so as to face the channel portion of the switching element when the substrate is viewed in plan. 7. The electro-optical device according to claim 1, wherein the electro-optical device is provided so as to overlap a contact hole.   The first layer electrically connects a scanning line for supplying a scanning signal to the switching element and a gate electrode provided so as to face the channel portion of the switching element when the substrate is viewed in plan. The electro-optical device according to claim 1, wherein the electro-optical device is provided so as not to overlap a contact hole.   The first layer is provided so as not to overlap with a peripheral circuit provided in a peripheral region located in a periphery of a pixel region in which the switching element is provided when the substrate is viewed in plan. The electro-optical device according to claim 1. The first layer includes a fourth layer, a fifth layer provided on an upper layer of the fourth layer, and a sixth layer provided on an upper layer of the fifth layer,
10. The electro-optical device according to claim 1, wherein the fifth layer includes a material that is less likely to cause a reaction by heat than the fourth layer and the sixth layer. .   An electronic apparatus comprising the electro-optical device according to claim 1. A pair of substrates sandwiching an electro-optic material, a switching element provided on one of the pair of substrates, and at least a position of the one substrate facing the switching element, the first layer And a method of manufacturing an electro-optical device comprising a light-shielding film having a second layer and a third layer that are less likely to cause a reaction by heat than the first layer,
A second layer forming step of forming the second layer;
A first layer forming step of forming the first layer on the second layer;
A first layer patterning step of patterning the first layer so that the second layer remains;
Forming a third layer in a region overlapping the second layer so as to cover the first layer;
And a heat treatment step of performing a heat treatment on the light-shielding film. A light-shielding film patterning step of patterning the light-shielding film after all of the first layer, the second layer, and the third layer are formed,
The method of manufacturing an electro-optical device according to claim 12, wherein the heat treatment step is performed before the light shielding film patterning step. An interlayer insulating film forming step of forming an interlayer insulating film on the light shielding film; and
A contact hole forming step of forming a contact hole so that the light shielding film is exposed at a portion of the interlayer insulating film that overlaps the first layer in a plane;
The method for manufacturing an electro-optical device according to claim 12, further comprising: a conductive film forming step of forming a conductive film in the contact hole.

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