JP4783801B2 - 非振動式接触電位差センサおよび制御された照射を利用した半導体検査システムおよび装置 - Google Patents

非振動式接触電位差センサおよび制御された照射を利用した半導体検査システムおよび装置 Download PDF

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JP4783801B2
JP4783801B2 JP2008057715A JP2008057715A JP4783801B2 JP 4783801 B2 JP4783801 B2 JP 4783801B2 JP 2008057715 A JP2008057715 A JP 2008057715A JP 2008057715 A JP2008057715 A JP 2008057715A JP 4783801 B2 JP4783801 B2 JP 4783801B2
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wafer
contamination
potential difference
semiconductor
irradiation energy
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JP2008304452A5 (https=
JP2008304452A (ja
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ジェフリー・アラン・ホーソーン
エム・ブランドン・スティール
イェユアン・ヤン
マーク・シュルツェ
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キューセプト・テクノロジーズ・インコーポレイテッド
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/002—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating the work function voltage
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2648—Characterising semiconductor materials
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/265—Contactless testing
    • G01R31/2656—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electrochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
JP2008057715A 2007-03-07 2008-03-07 非振動式接触電位差センサおよび制御された照射を利用した半導体検査システムおよび装置 Expired - Fee Related JP4783801B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/715,149 US7659734B2 (en) 2007-03-07 2007-03-07 Semiconductor inspection system and apparatus utilizing a non-vibrating contact potential difference sensor and controlled illumination
US11/715,149 2007-03-07

Publications (3)

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JP2008304452A JP2008304452A (ja) 2008-12-18
JP2008304452A5 JP2008304452A5 (https=) 2009-03-12
JP4783801B2 true JP4783801B2 (ja) 2011-09-28

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JP2008057715A Expired - Fee Related JP4783801B2 (ja) 2007-03-07 2008-03-07 非振動式接触電位差センサおよび制御された照射を利用した半導体検査システムおよび装置

Country Status (6)

Country Link
US (1) US7659734B2 (https=)
EP (1) EP1944614A1 (https=)
JP (1) JP4783801B2 (https=)
KR (1) KR100929768B1 (https=)
CN (1) CN101266222A (https=)
TW (1) TWI346776B (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7944550B2 (en) * 2008-02-29 2011-05-17 International Business Machines Corporation System and method for detecting local mechanical stress in integreated devices
CN102292804B (zh) * 2009-02-03 2014-02-12 Q概念技术公司 利用非振动接触势差传感器的图案化晶片检查系统
US8441268B2 (en) * 2010-04-06 2013-05-14 Lam Corporation Non-contact detection of surface fluid droplets
US9304160B1 (en) 2012-05-08 2016-04-05 Kla-Tencor Corporation Defect inspection apparatus, system, and method
JP6017096B1 (ja) * 2015-10-30 2016-10-26 三菱電機株式会社 ワイヤ放電加工機、ワイヤ放電加工機の制御装置の制御方法及び位置決め方法
CN108760885A (zh) * 2018-06-14 2018-11-06 德淮半导体有限公司 超声波扫描方法和超声波扫描装置
US10859625B2 (en) * 2018-08-21 2020-12-08 Globalfoundries Singapore Pte. Ltd. Wafer probe card integrated with a light source facing a device under test side and method of manufacturing
US11589474B2 (en) 2020-06-02 2023-02-21 Applied Materials, Inc. Diagnostic disc with a high vacuum and temperature tolerant power source
US11924972B2 (en) 2020-06-02 2024-03-05 Applied Materials, Inc. Diagnostic disc with a high vacuum and temperature tolerant power source
KR102942260B1 (ko) 2024-01-23 2026-03-19 에스케이하이닉스 주식회사 다중 전위차 센서를 이용한 반도체 표면 오염 검사장치
KR102936370B1 (ko) 2024-01-23 2026-03-09 주식회사 코비스테크놀로지 웨이퍼 높이 변화에 따른 전위차 센서 높이 자동 조절 기능을 갖는 반도체 표면 오염 검사장치
KR102873562B1 (ko) * 2024-09-04 2025-10-21 주식회사 코비스테크놀로지 다중 측정 센서를 포함하는 나선형 스캔 장치 및 이를 이용한 웨이퍼 검사 방법
KR20260034543A (ko) * 2024-09-04 2026-03-11 주식회사 코비스테크놀로지 다중 측정 센서를 포함하는 나선형 스캔 장치 및 이를 이용한 웨이퍼 검사 방법

Family Cites Families (73)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4166974A (en) * 1978-01-23 1979-09-04 The United States Of America As Represented By The Secretary Of The Navy Apparatus and method for measuring capacitive energy
GB2015165B (en) * 1978-02-09 1983-01-12 Koa Oil Co Ltd Detecting capacitively corrosion of pipes
US4481616A (en) * 1981-09-30 1984-11-06 Rca Corporation Scanning capacitance microscope
US4973910A (en) * 1988-01-14 1990-11-27 Wilson Mahlon S Surface potential analyzer
US5087533A (en) * 1989-10-12 1992-02-11 Brown Paul M Contact potential difference cell
DD297509A5 (de) 1990-03-13 1992-01-09 Kloeden,Rolf,De Kapazitiver sensor zur beruehrungslosen rauheitsmessung
DE4018993A1 (de) * 1990-06-13 1991-12-19 Max Planck Inst Eisenforschung Verfahren und einrichtung zur untersuchung beschichteter metalloberflaechen
GB9021448D0 (en) * 1990-10-03 1990-11-14 Renishaw Plc Capacitance sensing probe
GB9021447D0 (en) * 1990-10-03 1990-11-14 Renishaw Plc Capacitance probes
US5136247A (en) * 1991-01-18 1992-08-04 Hansen Wilford N Apparatus and methods for calibrated work function measurements
JP2774878B2 (ja) * 1991-04-25 1998-07-09 株式会社日立製作所 多層膜絶縁物試料の二次イオン質量分析方法
US5214389A (en) * 1992-01-06 1993-05-25 Motorola, Inc. Multi-dimensional high-resolution probe for semiconductor measurements including piezoelectric transducer arrangement for controlling probe position
US5217907A (en) * 1992-01-28 1993-06-08 National Semiconductor Corporation Array spreading resistance probe (ASRP) method for profile extraction from semiconductor chips of cellular construction
US5272443A (en) * 1992-04-22 1993-12-21 Aluminum Company Of America Chatter and profile measuring using capacitor sensors
US5315259A (en) * 1992-05-26 1994-05-24 Universities Research Association, Inc. Omnidirectional capacitive probe for gauge of having a sensing tip formed as a substantially complete sphere
US5218362A (en) * 1992-07-02 1993-06-08 National Semiconductor Corporation Multistep analog-to-digital converter with embedded correction data memory for trimming resistor ladders
US5293131A (en) * 1992-09-04 1994-03-08 Measurement Systems, Inc. Capacitive probe for bore measurement
US5381101A (en) * 1992-12-02 1995-01-10 The Board Of Trustees Of The Leland Stanford Junior University System and method of measuring high-speed electrical waveforms using force microscopy and offset sampling frequencies
US5460684A (en) * 1992-12-04 1995-10-24 Tokyo Electron Limited Stage having electrostatic chuck and plasma processing apparatus using same
US5546477A (en) * 1993-03-30 1996-08-13 Klics, Inc. Data compression and decompression
US5517123A (en) * 1994-08-26 1996-05-14 Analog Devices, Inc. High sensitivity integrated micromechanical electrostatic potential sensor
US5723981A (en) * 1994-08-29 1998-03-03 Imec Vzw Method for measuring the electrical potential in a semiconductor element
US6091248A (en) * 1994-08-29 2000-07-18 Imec Vzw Method for measuring the electrical potential in a semiconductor element
US6201401B1 (en) * 1994-08-29 2001-03-13 Imec Method for measuring the electrical potential in a semiconductor element
US5723980A (en) * 1995-06-07 1998-03-03 Aerogage Corporation Clearance measurement system
US5773989A (en) * 1995-07-14 1998-06-30 University Of South Florida Measurement of the mobile ion concentration in the oxide layer of a semiconductor wafer
US5974869A (en) * 1996-11-14 1999-11-02 Georgia Tech Research Corp. Non-vibrating capacitance probe for wear monitoring
US6097196A (en) * 1997-04-23 2000-08-01 Verkuil; Roger L. Non-contact tunnelling field measurement for a semiconductor oxide layer
US6011404A (en) * 1997-07-03 2000-01-04 Lucent Technologies Inc. System and method for determining near--surface lifetimes and the tunneling field of a dielectric in a semiconductor
US6139759A (en) * 1997-07-08 2000-10-31 International Business Machines Corporation Method of manufacturing silicided silicon microtips for scanning probe microscopy
WO1999003140A1 (en) * 1997-07-10 1999-01-21 Merck Patent Gmbh Solutions for cleaning silicon semiconductors or silicon oxides
US5977788A (en) * 1997-07-11 1999-11-02 Lagowski; Jacek Elevated temperature measurement of the minority carrier lifetime in the depletion layer of a semiconductor wafer
US6037797A (en) * 1997-07-11 2000-03-14 Semiconductor Diagnostics, Inc. Measurement of the interface trap charge in an oxide semiconductor layer interface
JP3650917B2 (ja) * 1997-08-29 2005-05-25 株式会社神戸製鋼所 表面光電圧による半導体表面評価方法及び装置
US6127289A (en) * 1997-09-05 2000-10-03 Lucent Technologies, Inc. Method for treating semiconductor wafers with corona charge and devices using corona charging
US6213853B1 (en) * 1997-09-10 2001-04-10 Speedfam-Ipec Corporation Integral machine for polishing, cleaning, rinsing and drying workpieces
US6094971A (en) * 1997-09-24 2000-08-01 Texas Instruments Incorporated Scanning-probe microscope including non-optical means for detecting normal tip-sample interactions
US6255128B1 (en) * 1998-08-06 2001-07-03 Lucent Technologies Inc. Non-contact method for determining the presence of a contaminant in a semiconductor device
US6517669B2 (en) * 1999-02-26 2003-02-11 Micron Technology, Inc. Apparatus and method of detecting endpoint of a dielectric etch
US6546814B1 (en) * 1999-03-13 2003-04-15 Textron Systems Corporation Method and apparatus for estimating torque in rotating machinery
US6791310B2 (en) * 1999-03-15 2004-09-14 Therma-Wave, Inc. Systems and methods for improved metrology using combined optical and electrical measurements
EP1039277A1 (en) 1999-03-22 2000-09-27 Meritor Heavy Vehicle Systems, LLC Torsional vibration monitoring system
US6114865A (en) * 1999-04-21 2000-09-05 Semiconductor Diagnostics, Inc. Device for electrically contacting a floating semiconductor wafer having an insulating film
US6265890B1 (en) * 1999-08-26 2001-07-24 Lucent Technologies Inc. In-line non-contact depletion capacitance measurement method and apparatus
US6858089B2 (en) * 1999-10-29 2005-02-22 Paul P. Castrucci Apparatus and method for semiconductor wafer cleaning
US6538462B1 (en) * 1999-11-30 2003-03-25 Semiconductor Diagnostics, Inc. Method for measuring stress induced leakage current and gate dielectric integrity using corona discharge
JP2001168160A (ja) * 1999-12-07 2001-06-22 Sony Corp 半導体ウェハの検査システム
US6232134B1 (en) * 2000-01-24 2001-05-15 Motorola Inc. Method and apparatus for monitoring wafer characteristics and/or semiconductor processing consistency using wafer charge distribution measurements
US6664546B1 (en) * 2000-02-10 2003-12-16 Kla-Tencor In-situ probe for optimizing electron beam inspection and metrology based on surface potential
US6717413B1 (en) * 2000-04-21 2004-04-06 Georgia Tech Research Corporation Contact potential difference ionization detector
CA2309412A1 (en) * 2000-05-24 2001-11-24 Michael Thompson Scanning of biochemical microassays by kelvin microprobe
US7084661B2 (en) * 2000-05-24 2006-08-01 Sensorchem International Corporation Scanning kelvin microprobe system and process for analyzing a surface
AU2001281291A1 (en) * 2000-06-29 2002-01-14 Semiconductor Diagnostics, Inc. Method for fast and accurate determination of the minority carrier diffusion length from simultaneously measured surface photovoltages
US6664800B2 (en) * 2001-01-08 2003-12-16 Agere Systems Inc. Non-contact method for determining quality of semiconductor dielectrics
US6680621B2 (en) * 2001-01-26 2004-01-20 Semiconductor Diagnostics, Inc. Steady state method for measuring the thickness and the capacitance of ultra thin dielectric in the presence of substantial leakage current
US6597193B2 (en) * 2001-01-26 2003-07-22 Semiconductor Diagnostics, Inc. Steady state method for measuring the thickness and the capacitance of ultra thin dielectric in the presence of substantial leakage current
US6679117B2 (en) * 2001-02-07 2004-01-20 Georgia Tech Research Corporation Ionization contact potential difference gyroscope
US7019654B2 (en) * 2001-03-29 2006-03-28 Georgia Tech Research Corporation Contact potential difference sensor to monitor oil properties
KR100415538B1 (ko) * 2001-09-14 2004-01-24 주식회사 하이닉스반도체 이중 유전막을 구비한 캐패시터 및 그 제조 방법
US6711952B2 (en) * 2001-10-05 2004-03-30 General Electric Company Method and system for monitoring bearings
WO2003033993A1 (en) * 2001-10-19 2003-04-24 Commonwealth Scientific And Industrial Research Organisation A kelvin probe instrument
KR100546303B1 (ko) * 2002-01-10 2006-01-26 삼성전자주식회사 코로나 전하를 이용한 집적 회로 소자의 콘택홀 모니터링방법
US7236847B2 (en) * 2002-01-16 2007-06-26 Kla-Tencor Technologies Corp. Systems and methods for closed loop defect reduction
JP4000967B2 (ja) * 2002-09-13 2007-10-31 トヨタ自動車株式会社 ダウンシフト時のトルクダウン制御装置
US6929531B2 (en) * 2002-09-19 2005-08-16 Lam Research Corporation System and method for metal residue detection and mapping within a multi-step sequence
US6771091B2 (en) * 2002-09-24 2004-08-03 Semiconductor Diagnostics, Inc. Method and system for elevated temperature measurement with probes designed for room temperature measurement
JP3934022B2 (ja) * 2002-10-09 2007-06-20 株式会社大井製作所 車両用開閉体の速度制御装置
JP2004177377A (ja) * 2002-11-29 2004-06-24 Hitachi Ltd 検査方法および検査装置
US7107158B2 (en) * 2003-02-03 2006-09-12 Qcept Technologies, Inc. Inspection system and apparatus
US6957154B2 (en) * 2003-02-03 2005-10-18 Qcept Technologies, Inc. Semiconductor wafer inspection system
US7308367B2 (en) * 2003-02-03 2007-12-11 Qcept Technologies, Inc. Wafer inspection system
US7081369B2 (en) * 2003-02-28 2006-07-25 Intel Corporation Forming a semiconductor device feature using acquired parameters
EP1629252A1 (en) * 2003-04-17 2006-03-01 Koninklijke Philips Electronics N.V. Method and apparatus for determining the thickness of a dielectric layer

Also Published As

Publication number Publication date
EP1944614A1 (en) 2008-07-16
KR100929768B1 (ko) 2009-12-03
US7659734B2 (en) 2010-02-09
TWI346776B (en) 2011-08-11
US20080217530A1 (en) 2008-09-11
JP2008304452A (ja) 2008-12-18
KR20080082457A (ko) 2008-09-11
TW200846650A (en) 2008-12-01
CN101266222A (zh) 2008-09-17

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