JP4780474B2 - Thin film laminate manufacturing method and manufacturing apparatus - Google Patents

Thin film laminate manufacturing method and manufacturing apparatus Download PDF

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JP4780474B2
JP4780474B2 JP2007173954A JP2007173954A JP4780474B2 JP 4780474 B2 JP4780474 B2 JP 4780474B2 JP 2007173954 A JP2007173954 A JP 2007173954A JP 2007173954 A JP2007173954 A JP 2007173954A JP 4780474 B2 JP4780474 B2 JP 4780474B2
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JP2009013445A (en
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章弘 高野
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Fuji Electric Co Ltd
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本発明は、帯状可撓性基板を用いて薄膜積層体を製造する方法および装置に関する。   The present invention relates to a method and an apparatus for manufacturing a thin film laminate using a strip-like flexible substrate.

半導体薄膜などの薄膜積層体の基板には、通常、剛性の基板が用いられるが、例えば、太陽電池等に使用される光電変換素子の基板には、軽量で取り扱いが容易であるといった利便性や、大量生産によるコスト低減のため、樹脂などの可撓性基板も用いられている。   As a substrate of a thin film laminate such as a semiconductor thin film, a rigid substrate is usually used. For example, a substrate of a photoelectric conversion element used for a solar cell or the like is light and easy to handle. In order to reduce costs due to mass production, a flexible substrate such as a resin is also used.

このような可撓性基板を用いて薄膜積層体を製造する装置として、連続して配列された複数の成膜室に帯状可撓性基板を通し、各成膜室で停止した状態の前記基板の表面上に成膜し、次いでこの基板を次の成膜室の位置まで搬送する操作を繰り返し、前記基板の上に複数の異なる性質の薄膜を積層する、ステッピングロール方式の成膜装置が開発されている(特許文献1を参照)。
特開平6−291349号公報
As an apparatus for manufacturing a thin film laminate using such a flexible substrate, the substrate in a state in which a strip-like flexible substrate is passed through a plurality of continuously formed film forming chambers and stopped in each film forming chamber. Developed a stepping roll type film deposition system that deposits a plurality of thin films with different properties on the substrate by repeating the operation of forming a film on the surface of the substrate and then transporting the substrate to the next deposition chamber. (See Patent Document 1).
JP-A-6-291349

このようなステッピングロール方式の成膜装置では、停止した状態の帯状可撓性基板に対し、各成膜室の基板出入口において密閉部材を密着させて各成膜室内を気密状態にしてから基板表面に薄膜を形成している。密閉部材の駆動源にはエアシリンダ等のアクチュエーターを使用しており、全成膜室の密閉部材を同時に駆動しても、十数室ある成膜室では、実際に密閉部材が基板に密着するタイミングが全て同時になるとは限らない。帯状可撓性基板は、巻出ローラから巻取ローラまでの間、一定の張力で張られるように張力制御ローラで制御されているが、張力制御ローラに一番近い成膜室の密閉部材が最初に基板に密着した場合、遠くの成膜室では基板の張力が制御されないまま、密閉部材が基板に密着することとなる。基板の張力が弱く、基板が弛んだ状態で密閉部材が密着した場合、膜厚分布が乱れたり、成膜位置が外れたりするという問題がある。一方、成膜室毎に張力制御ローラを設けることでこの問題は解決できるが、装置規模が長大となり、また制御も複雑になるという問題がある。   In such a stepping roll type film forming apparatus, a sealing member is brought into close contact with the belt-like flexible substrate in a stopped state at the substrate entrance / exit of each film forming chamber to make each film forming chamber airtight, and then the substrate surface A thin film is formed. An actuator such as an air cylinder is used as a driving source for the sealing member. Even if the sealing members in all the film forming chambers are driven simultaneously, the sealing member actually adheres to the substrate in the film forming chambers having a dozen or more chambers. Not all timings are the same. The belt-like flexible substrate is controlled by a tension control roller so as to be stretched at a constant tension from the unwinding roller to the winding roller, but the sealing member in the film forming chamber closest to the tension control roller is When the substrate first comes into close contact with the substrate, the sealing member comes into close contact with the substrate while the tension of the substrate is not controlled in the far deposition chamber. When the sealing member is in close contact with the substrate being weak and the substrate is slack, there is a problem that the film thickness distribution is disturbed or the film forming position is deviated. On the other hand, although this problem can be solved by providing a tension control roller for each film forming chamber, there is a problem that the apparatus scale becomes long and the control becomes complicated.

そこで本発明は、上記の問題点に鑑み、ステッピングロール方式で薄膜積層体を製造する際、帯状可撓性基板の正確な位置に、均一な膜厚分布の薄膜を容易に形成することができる薄膜積層体の製造方法および製造装置を提供することを目的とする。   In view of the above problems, the present invention can easily form a thin film having a uniform film thickness distribution at an accurate position of a strip-shaped flexible substrate when a thin film laminate is manufactured by a stepping roll method. It aims at providing the manufacturing method and manufacturing apparatus of a thin film laminated body.

上記の目的を達成するために、本発明は、その一態様として、連続して配列された複数の成膜室に帯状可撓性基板を通し、各成膜室の基板出入口において停止した状態の前記基板に密閉部材を密着させて各成膜室内を気密状態にして前記基板の表面上に成膜し、次いで前記基板から前記密閉部材を離して前記気密状態を解除した後、この基板を次の成膜室の位置まで搬送する操作を繰り返し、前記基板の上に複数の異なる性質の薄膜を積層する薄膜積層体の製造方法であって、各成膜室において前記基板に前記密閉部材を密着させて前記気密状態を形成する際、前記基板の巻き取り側の成膜室から巻き出し側の成膜室に向かって順次時間差を設けて前記形成を行うことを特徴とするものである。   In order to achieve the above object, according to one aspect of the present invention, a belt-like flexible substrate is passed through a plurality of continuously arranged film forming chambers and stopped at the substrate entrance / exit of each film forming chamber. A sealing member is brought into close contact with the substrate to form a film on the surface of each substrate with each film forming chamber being airtight, and then the airtight state is released by separating the sealing member from the substrate. A method of manufacturing a thin film laminate in which a plurality of thin films having different properties are stacked on the substrate by repeating the operation of transporting to the position of the film forming chamber, wherein the sealing member is in close contact with the substrate in each film forming chamber Then, when forming the airtight state, the formation is performed by sequentially providing a time difference from the film forming chamber on the winding side of the substrate toward the film forming chamber on the unwinding side.

このように、帯状可撓性基板の巻き取り側の成膜室から巻き出し側の成膜室に向かって順次時間差を設けて、各成膜室の密閉部材を基板に密着させて気密状態を形成することで、いずれの成膜室においても、その密閉部材を基板に密着させて気密状態を形成する直前まで基板の張力を制御することができるので、基板が弛んだ状態での気密状態の形成を防ぐことができ、よって、基板の正確な位置に、均一な膜厚分布の薄膜を形成することができる。   In this way, a time difference is sequentially provided from the film forming chamber on the winding side of the belt-shaped flexible substrate toward the film forming chamber on the unwinding side, and the sealing member of each film forming chamber is brought into close contact with the substrate to achieve an airtight state. In any film formation chamber, the tension of the substrate can be controlled immediately before the hermetic member is brought into close contact with the substrate to form an airtight state. Formation can be prevented, and thus a thin film having a uniform thickness distribution can be formed at an accurate position of the substrate.

本発明に係る薄膜積層体の製造方法では、各成膜室において前記基板から前記密閉部材を離して前記気密状態を解除する際、前記基板の巻き出し側の成膜室から巻き取り側の成膜室に向かって順次時間差を設けて前記解除を行うことが好ましい。   In the method for producing a thin film laminate according to the present invention, when the airtight state is released by releasing the sealing member from the substrate in each film forming chamber, the film forming chamber on the winding side is unwound from the film forming chamber on the unwinding side of the substrate. It is preferable to perform the release by sequentially providing a time difference toward the film chamber.

成膜室の密閉部材を基板から離して気密状態を解除する際、全成膜室で同時に気密状態を解除すると、CVDやスパッタ等の処理により基板が伸びており、これによって基板全体の張力が不安定になって、基板の搬送時に搬送ローラ上で基板に皺が発生したり、成膜室等の装置構造物に接触して基板が損傷したり、基板が搬送ローラから脱落したりするという問題がある。そこで、このように、帯状可撓性基板の巻き出し側の成膜室から巻き取り側の成膜室に向かって順次時間差を設けて、各成膜室の密閉部材を基板から離して気密状態を解除することで、いずれの成膜室においても気密状態を解除する直前まで基板の張力を制御することができるので、上記のような問題を回避することができる。   When releasing the airtight state by separating the sealing member of the film formation chamber from the substrate, if the airtight state is released simultaneously in all the film formation chambers, the substrate is stretched by a process such as CVD or sputtering. It becomes unstable, and when the substrate is transferred, the substrate is wrinkled on the transfer roller, the substrate is damaged due to contact with an apparatus structure such as a film forming chamber, or the substrate is dropped from the transfer roller. There's a problem. Therefore, in this way, a time difference is sequentially provided from the film forming chamber on the winding side of the belt-shaped flexible substrate toward the film forming chamber on the winding side, and the sealing member of each film forming chamber is separated from the substrate and is airtight. Since the tension of the substrate can be controlled until just before releasing the airtight state in any film forming chamber, the above-described problems can be avoided.

本発明は、別の態様として、帯状可撓性基板の上に複数の異なる性質の薄膜を積層する薄膜積層体の製造装置であって、前記基板が通るように連続して配列され、前記基板の表面上に成膜を行う複数の成膜室と、各成膜室の基板出入口において停止した状態の前記基板に密着して各成膜室内を気密状態にするとともに、成膜後には前記基板から離れて前記気密状態を解除する密閉部材と、前記基板を成膜室から次の成膜室へ搬送することを繰り返し行う基板搬送手段と、各成膜室において前記基板に前記密閉部材が密着して前記気密状態を形成する際、前記基板の巻き取り側の成膜室から巻き出し側の成膜室に向かって順次時間差を設けて前記気密状態の形成を行うように制御する制御手段とを備えたことを特徴とするものである。   Another aspect of the present invention is a manufacturing apparatus for a thin film laminate in which a plurality of thin films having different properties are stacked on a strip-shaped flexible substrate, and the substrate is continuously arranged so that the substrate passes through the substrate. A plurality of film forming chambers for forming a film on the surface of each of the film forming chambers, and in close contact with the substrate stopped at the substrate entrance / exit of each film forming chamber to make each film forming chamber airtight, and after film formation, the substrate A sealing member that releases the airtight state away from the substrate, substrate transport means that repeatedly transports the substrate from the deposition chamber to the next deposition chamber, and the sealing member that is in close contact with the substrate in each deposition chamber And a control means for controlling the formation of the airtight state by providing a time difference sequentially from the film forming chamber on the winding side of the substrate toward the film forming chamber on the unwinding side when forming the airtight state. It is characterized by comprising.

前記制御手段としては、各成膜室において前記基板から前記密閉部材が離れて前記気密状態を解除する際、前記基板の巻き出し側の成膜室から巻き取り側の成膜室に向かって順次時間差を設けて前記気密状態の解除を行うように制御するものであることが好ましい。   As the control means, when the sealing member is separated from the substrate in each film forming chamber to release the airtight state, the film forming chamber on the substrate unwinding side sequentially moves toward the film forming chamber on the winding side. It is preferable to control to release the airtight state with a time difference.

このように本発明によれば、ステッピングロール方式で薄膜積層体を製造する際、帯状可撓性基板の正確な位置に、均一な膜厚分布の薄膜を容易に形成する薄膜積層体の製造方法および製造装置を提供することができる。   As described above, according to the present invention, when a thin film laminate is manufactured by the stepping roll method, a thin film laminate manufacturing method for easily forming a thin film having a uniform film thickness distribution at an accurate position of the belt-like flexible substrate. And a manufacturing apparatus can be provided.

以下、添付図面を参照して、本発明に係る薄膜積層体の製造方法および製造装置の一実施の形態について説明する。なお、ここでは、薄膜積層体の例として太陽電池用の光電変換素子について説明するが、本発明は光電変換素子に限定されず、帯状可撓性基板の表面上に複数の異なる性質の薄膜を積層する薄膜積層体であれば、有機EL等のその他の半導体薄膜でも、同様の効果を得ることができる。   Hereinafter, an embodiment of a method for manufacturing a thin film laminate and a manufacturing apparatus according to the present invention will be described with reference to the accompanying drawings. In addition, although the photoelectric conversion element for solar cells is demonstrated here as an example of a thin film laminated body, this invention is not limited to a photoelectric conversion element, The thin film of a several different property on the surface of a strip | belt-shaped flexible substrate is demonstrated. The same effect can be obtained with other semiconductor thin films such as organic EL as long as the thin film stack is laminated.

図1は、本発明に係る薄膜積層体の製造装置の一実施の形態であって、ステッピングロール方式の薄膜光電変換素子の製造装置を模式的に示す平面図である。図2は、図1に示した成膜室を模式的に拡大して示す断面平面図である。   FIG. 1 is a plan view schematically showing an apparatus for manufacturing a thin film photoelectric conversion element of a stepping roll type, which is an embodiment of the apparatus for manufacturing a thin film laminate according to the present invention. FIG. 2 is a cross-sectional plan view schematically showing the film forming chamber shown in FIG.

図1に示すように、この薄膜光電変換素子の製造装置10は、帯状可撓性基板がロール状に巻かれた原反から帯状可撓性基板1を送り出す巻出ローラ11と、帯状可撓性基板1の表面上に薄膜光電変換素子を構成する各層を形成する複数の成膜室41〜53と、薄膜光電変換素子が形成された基板を巻き取る巻取ローラ12とから主に構成されている。   As shown in FIG. 1, the thin film photoelectric conversion device manufacturing apparatus 10 includes an unwinding roller 11 that feeds a strip-shaped flexible substrate 1 from a raw material in which the strip-shaped flexible substrate is wound in a roll shape, and a strip-shaped flexible substrate. Mainly composed of a plurality of film forming chambers 41 to 53 for forming each layer constituting the thin film photoelectric conversion element on the surface of the conductive substrate 1 and a winding roller 12 for winding the substrate on which the thin film photoelectric conversion element is formed. ing.

なお、帯状可撓性基板1の表面ならびに巻出ローラ11及び巻取ローラ12の各軸は鉛直に設置されている。また、本装置は、2本の帯状可撓性基板1a、1bに同時に薄膜を形成できるように、巻出ローラ11aから巻取ローラ12aまでの系統と巻出ローラ11bから巻取ローラ12bまでの系統の2つの系統が並んで設けられている。   Note that the surface of the strip-shaped flexible substrate 1 and the axes of the unwinding roller 11 and the winding roller 12 are installed vertically. In addition, this apparatus can form a film from the unwinding roller 11a to the winding roller 12a and the unwinding roller 11b to the winding roller 12b so that a thin film can be simultaneously formed on the two strip-shaped flexible substrates 1a and 1b. Two systems are provided side by side.

巻出ローラ11と最初の成膜室である第1成膜室41との間には、帯状可撓性基板1をこの成膜室41内の所定の位置へと送る第1フィードローラ21が設けられている。このフィードローラ21には、帯状可撓性基板1をフィードローラ21とで挟んで、基板の張力を制御するように構成されている第1ピンチローラ22が設けられている。   Between the unwinding roller 11 and the first film forming chamber 41 which is the first film forming chamber, there is a first feed roller 21 which sends the strip-shaped flexible substrate 1 to a predetermined position in the film forming chamber 41. Is provided. This feed roller 21 is provided with a first pinch roller 22 configured to control the tension of the substrate by sandwiching the belt-like flexible substrate 1 with the feed roller 21.

第1成膜室41から第11成膜室51まで一線上に配列されており、これら複数の成膜室の中央の位置、すなわち第5成膜室55と第6成膜室56の間に、帯状可撓性基板1の張力を測定する第1テンションモニタリングローラ31と、帯状可撓性基板1の蛇行を制御する一対の第1EPCローラ23とが設置されている。   The first film formation chamber 41 to the eleventh film formation chamber 51 are arranged in a line, and the central position of the plurality of film formation chambers, that is, between the fifth film formation chamber 55 and the sixth film formation chamber 56. A first tension monitoring roller 31 that measures the tension of the strip-shaped flexible substrate 1 and a pair of first EPC rollers 23 that control meandering of the strip-shaped flexible substrate 1 are installed.

第11成膜室51を出た位置には、帯状可撓性基板1の進行方向を90度変える第2フィードローラ24と第1ガイドローラ26の2つが設けられている。これら第2フィードローラ24と第1ガイドローラ26の間には、帯状可撓性基板1の張力を測定する第2テンションモニタリングローラ32と、帯状可撓性基板1の蛇行を制御する一対の第2EPCローラ25とが設置されている。   Two positions of a second feed roller 24 and a first guide roller 26 that change the traveling direction of the belt-like flexible substrate 1 by 90 degrees are provided at positions that have left the eleventh film formation chamber 51. Between the second feed roller 24 and the first guide roller 26, a second tension monitoring roller 32 for measuring the tension of the strip-shaped flexible substrate 1 and a pair of first controls for controlling the meandering of the strip-shaped flexible substrate 1. A 2EPC roller 25 is installed.

第1ガイドローラ26で進行方向が変わった後にも、第12成膜室52と第13成膜室53の複数の成膜室が一線上に配列されている。これら成膜室52、53の間には、帯状可撓性基板1を挟んで搬送する第2ガイドローラ27と第2ピンチローラ28が設置されている。第13成膜室53を出た位置には、巻取ローラ12が設けられており、帯状可撓性基板1を巻き取るとともに、張力を制御する機能を有している。第13成膜室53と巻取ローラ12との間には、帯状可撓性基板1の張力を測定する第3テンションモニタリングローラ33と、帯状可撓性基板1の蛇行を制御する一対の第3EPCローラ29とが設置されている。   Even after the advancing direction is changed by the first guide roller 26, the plurality of film forming chambers of the twelfth film forming chamber 52 and the thirteenth film forming chamber 53 are arranged on one line. Between the film forming chambers 52 and 53, a second guide roller 27 and a second pinch roller 28 which are transported with the belt-like flexible substrate 1 interposed therebetween are installed. A take-up roller 12 is provided at a position leaving the thirteenth film formation chamber 53, and has a function of taking up the belt-like flexible substrate 1 and controlling the tension. Between the thirteenth film forming chamber 53 and the take-up roller 12, a third tension monitoring roller 33 that measures the tension of the strip-shaped flexible substrate 1 and a pair of first controls that control meandering of the strip-shaped flexible substrate 1. A 3EPC roller 29 is installed.

次に、成膜室41〜53の構造について説明する。各成膜室の構造は、形成する薄膜の種類によって異なるが、ここでは、光電変換層を形成するために、プラズマCVDによってアモルファスシリコン層を成膜する成膜室について説明する。その他の薄膜を形成する成膜室についても、成膜室内を気密状態にする場合は、同様の構造を採用することができる。   Next, the structure of the film forming chambers 41 to 53 will be described. The structure of each film formation chamber differs depending on the type of thin film to be formed. Here, a film formation chamber in which an amorphous silicon layer is formed by plasma CVD in order to form a photoelectric conversion layer will be described. The same structure can be adopted for the film forming chamber for forming other thin films when the film forming chamber is airtight.

図2(a)に示すように、2本の帯状可撓性基板1a、1bが平行に並んでおり、これら2本の基板1a、1bの外側に、それぞれ断面コの字形状の成膜室の壁60a、60bが配置されている。壁60の端部には、基板と密着した場合に気密性を保つシール材61が取り付けられている。壁60に囲まれた成膜室内部には、高電圧電極62が設置されている。また、2本の基板1a、1bの内側には、基板ヒータ65を備えた接地電極64が配置されている。すなわち、高電圧電極62と接地電極64とが基板1を挟んで対向するように配置されている。   As shown in FIG. 2 (a), two strip-like flexible substrates 1a and 1b are arranged in parallel, and each of the two substrates 1a and 1b has a U-shaped deposition chamber on the outside. Walls 60a and 60b are arranged. A sealing material 61 that maintains airtightness when attached to the substrate is attached to the end of the wall 60. A high voltage electrode 62 is installed inside the film forming chamber surrounded by the wall 60. A ground electrode 64 including a substrate heater 65 is disposed inside the two substrates 1a and 1b. That is, the high voltage electrode 62 and the ground electrode 64 are disposed so as to face each other with the substrate 1 interposed therebetween.

成膜室の壁60は、成膜する際に、帯状可撓性基板1に向かって可動する構成となっている。図2(b)に示すように、成膜室の壁60は、壁60端部に取り付けられたシール材61が基板1の表面に密着するとともに、さらに基板1を押して、基板1の裏面が接地電極64に接触するまで移動し、これによって成膜室内を気密状態にするように構成されている。   The wall 60 of the film forming chamber is configured to move toward the strip-shaped flexible substrate 1 during film formation. As shown in FIG. 2 (b), the wall 60 of the film forming chamber has a sealing material 61 attached to the end of the wall 60 in close contact with the surface of the substrate 1, and further presses the substrate 1, so that the back surface of the substrate 1 is The film is moved until it contacts the ground electrode 64, and the film forming chamber is thereby made airtight.

成膜室には、成膜室内を排気して真空雰囲気にする排気管(図示省略)が設けられている。また、成膜室には、高電圧電極62と接地電極64との間に生ずるプラズマ5により分解されて薄膜を形成するためのシラン等の反応ガスを導入する導入管(図示省略)が設けられている。反応室の壁60は、成膜が完了した後、図2(a)に示す元の位置まで移動するように構成されている。   The film formation chamber is provided with an exhaust pipe (not shown) that exhausts the film formation chamber to create a vacuum atmosphere. The film forming chamber is provided with an introduction pipe (not shown) for introducing a reactive gas such as silane which is decomposed by the plasma 5 generated between the high voltage electrode 62 and the ground electrode 64 to form a thin film. ing. The wall 60 of the reaction chamber is configured to move to the original position shown in FIG.

また、本装置10には、第1から第13成膜室41〜53の各壁60の移動を制御する制御手段(図示省略)が設けられている。この制御手段は、帯状可撓性基板1の搬送および停止を行うため、巻出ローラ11や巻取ローラ12等の駆動を制御するとともに、第1から第3テンションモニタリングローラ31〜33による張力測定結果に基づいて、第1フィードローラ21、第2フィードローラ24、巻取ローラ12等を駆動して基板1の張力を制御するように構成されている。   Further, the present apparatus 10 is provided with a control means (not shown) for controlling the movement of each wall 60 of the first to thirteenth film forming chambers 41 to 53. This control means controls the driving of the unwinding roller 11 and the winding roller 12 in order to carry and stop the belt-like flexible substrate 1, and measures the tension by the first to third tension monitoring rollers 31 to 33. Based on the result, the first feed roller 21, the second feed roller 24, the take-up roller 12 and the like are driven to control the tension of the substrate 1.

以上の構成によれば、先ず、第1から第13の各成膜室41〜53において、停止した状態の帯状可撓性基板1上に薄膜を形成する際、図1の実線の矢印110で示すように、巻取ローラ12側の第13成膜室53から巻出ローラ11側の第1成膜室41に向かって順次時間差を設けて各成膜室の壁60を移動させ、シール材61と基板1とを密着させて成膜室内を気密状態にする。すなわち、最初に第13成膜室53の壁のシール材61を基板1に密着させるが、もし、残りの第1から第12成膜室41〜52内を通る基板1の張力が弱まった場合、第2フィードローラ24の駆動により張力を所定の値に制御してから、次の第12成膜室52の壁のシール材61を基板1に密着させる。これにより、第12成膜室52で、張力が弛んだ状態の基板1にシール材61が密着するのを防ぐことができる。   According to the above configuration, first, in forming the thin film on the strip-like flexible substrate 1 in the stopped state in each of the first to thirteenth film forming chambers 41 to 53, the solid line arrow 110 in FIG. As shown in the figure, a time difference is sequentially provided from the thirteenth film forming chamber 53 on the winding roller 12 side toward the first film forming chamber 41 on the unwinding roller 11 side to move the wall 60 of each film forming chamber, and the sealing material 61 and the substrate 1 are brought into close contact with each other to make the film formation chamber airtight. That is, the sealing material 61 on the wall of the thirteenth film forming chamber 53 is first brought into close contact with the substrate 1, but if the tension of the substrate 1 passing through the remaining first to twelfth film forming chambers 41 to 52 is weakened. After the tension is controlled to a predetermined value by driving the second feed roller 24, the sealing material 61 on the wall of the next twelfth film forming chamber 52 is brought into close contact with the substrate 1. Thereby, it is possible to prevent the sealing material 61 from coming into close contact with the substrate 1 in a state where the tension is relaxed in the twelfth film forming chamber 52.

同様にして、第11成膜室51から第1成膜室41への順に、残りの成膜室内を通る基板1の張力が弱まったら、第1フィードローラ21の駆動により張力を所定の値に制御した後、次の成膜室のシール材61を基板1に密着させるという操作を繰り返すことで、いずれの成膜室においても、所定の張力の基板1にシール材61を密着させることができる。なお、基板1の張力制御は、第1フィードローラ21又は第2フィードローラ24のみが行うとは限らず、第13成膜室53における張力制御は第3フィードローラ28及び巻取ローラ12が行うこともできる。   Similarly, when the tension of the substrate 1 passing through the remaining film forming chambers decreases in order from the eleventh film forming chamber 51 to the first film forming chamber 41, the tension is set to a predetermined value by driving the first feed roller 21. After the control, by repeating the operation of bringing the sealing material 61 of the next film forming chamber into close contact with the substrate 1, the sealing material 61 can be brought into close contact with the substrate 1 having a predetermined tension in any film forming chamber. . Note that the tension control of the substrate 1 is not necessarily performed only by the first feed roller 21 or the second feed roller 24, and the tension control in the thirteenth film forming chamber 53 is performed by the third feed roller 28 and the winding roller 12. You can also

第1から第13の各成膜室41〜53では、成膜室内を気密状態にしたら、基板1の表面上に薄膜を形成する。成膜後、気密状態を解除する際、今度は、図1の破線の矢印120で示すように、巻出ローラ11側の第1成膜室41から巻取ローラ12側の第13成膜室53に向かって順次時間差を設けて、各成膜室の壁60を元の位置に移動させて、シール材61を基板1から離して気密状態を解除する。   In each of the first to thirteenth film forming chambers 41 to 53, a thin film is formed on the surface of the substrate 1 when the film forming chamber is airtight. When the airtight state is released after film formation, this time, as indicated by the broken-line arrow 120 in FIG. 1, the first film formation chamber 41 on the unwinding roller 11 side to the 13th film formation chamber on the take-up roller 12 side. A time difference is sequentially provided toward 53, the wall 60 of each film forming chamber is moved to the original position, and the sealing material 61 is separated from the substrate 1 to release the airtight state.

すなわち、最初に第1成膜室41の壁のシール材61を基板から離して、第1成膜室41の気密状態を解除するが、このとき基板1は、成膜時に基板ヒータ65によって加熱されているため、伸びて張力が弱まる。これを、巻出ローラ11と第1フィードローラ21との間に設けられたテンションモニタリングローラ(図示省略)にて検出して、第1フィードローラ21を駆動することにより基板1の張力を所定の値に制御する。同様にして、第2成膜室42から第5成膜室45への順に、気密状態を解除して成膜室を通る基板1の張力が弱まったら、第1フィードローラ21の駆動により張力を所定の値に制御する。次に、第6成膜室46から第11成膜室51への順に、気密状態を解除して基板1の張力が弱まった場合は、第1テンションモニタリングローラ31にて検出し、上記と同様に張力を制御する。さらに、第12成膜室52から第13成膜室53の順に、気密状態を解除して基板1の張力が弱まった場合は、第2テンションモニタリングローラ32にて検出し、第2フィードローラ24の駆動により張力を所定の値に制御する。なお、第13成膜室53の気密状態を解除する際は、第3テンションモニタリングローラ33にて基板1の張力が弱まったことを検出することもできるし、巻取ローラ12による張力制御も可能である。   That is, first, the sealing material 61 on the wall of the first film formation chamber 41 is separated from the substrate to release the airtight state of the first film formation chamber 41. At this time, the substrate 1 is heated by the substrate heater 65 during film formation. Therefore, it stretches and the tension is weakened. This is detected by a tension monitoring roller (not shown) provided between the unwinding roller 11 and the first feed roller 21, and the first feed roller 21 is driven so that the tension of the substrate 1 is predetermined. Control to value. Similarly, in the order from the second film formation chamber 42 to the fifth film formation chamber 45, when the tension of the substrate 1 passing through the film formation chamber is released by releasing the airtight state, the tension is increased by driving the first feed roller 21. Control to a predetermined value. Next, in the order from the sixth film forming chamber 46 to the eleventh film forming chamber 51, when the tension of the substrate 1 is weakened by releasing the airtight state, the first tension monitoring roller 31 detects the same and the same as above. To control the tension. Further, in the order from the twelfth film forming chamber 52 to the thirteenth film forming chamber 53, when the airtight state is released and the tension of the substrate 1 is weakened, it is detected by the second tension monitoring roller 32, and the second feed roller 24 The tension is controlled to a predetermined value by driving. When releasing the airtight state of the thirteenth film forming chamber 53, the third tension monitoring roller 33 can detect that the tension of the substrate 1 has weakened, and the tension control by the winding roller 12 is also possible. It is.

これにより、成膜処理によって基板1が伸びていた場合でも、第1フィードローラ21、第2フィードローラ24等の駆動により基板1の張力を所定の値に制御しながら、シール材61を基板1から離すことになるので、基板全体の張力が極度に低下するのを回避することができる。   Thus, even when the substrate 1 is stretched by the film forming process, the sealing material 61 is transferred to the substrate 1 while controlling the tension of the substrate 1 to a predetermined value by driving the first feed roller 21 and the second feed roller 24. Therefore, the tension of the entire substrate can be avoided from being extremely lowered.

全成膜室の気密状態を解除したら、帯状可撓性基板1を次の成膜室の位置まで搬送する。そして、この停止した基板1に対し、再び、図1の実線の矢印110で示すように巻取ローラ12側から巻出ローラ11側に向かって順次時間差を設けて各成膜室のシール材61を密着させて、成膜室内を気密状態にする。このように、連続して配列された第1から第13の成膜室41〜53において、気密状態の形成および解除を所定の方向に向かって順次時間差を設けて行いながら、成膜を繰り返すことで、基板1上に光電変換層などの薄膜が積層した薄膜光電変換素子を製造することができる。   When the airtight state of all the film forming chambers is released, the belt-like flexible substrate 1 is transferred to the position of the next film forming chamber. Then, with respect to the stopped substrate 1, again, as indicated by a solid line arrow 110 in FIG. 1, a time difference is sequentially provided from the winding roller 12 side toward the unwinding roller 11 side to seal the sealing material 61 in each film forming chamber. Are brought into close contact with each other to make the film formation chamber airtight. In this way, in the first to thirteenth film forming chambers 41 to 53 arranged in series, the film formation is repeated while the formation and release of the airtight state are sequentially performed in a predetermined direction with a time difference. Thus, a thin film photoelectric conversion element in which a thin film such as a photoelectric conversion layer is laminated on the substrate 1 can be manufactured.

なお、本発明は、上記の実施の形態に限定されず、その他にも種々の実施の形態を採用することができる。例えば、図2では、2本の帯状可撓性基板1a、1bの外側に成膜室を配置したが、これらの内側に成膜室を配置しても良い。すなわち、2本の基板の外側に、可動式の接地電極を配置し、内側に壁に囲まれた高電圧電極を配置し、設置電極が基板を押すことで、基板が壁の端部のシール材と密着して、基板と壁とで気密状態を形成することができる。   In addition, this invention is not limited to said embodiment, In addition, various embodiment can be employ | adopted. For example, in FIG. 2, the film forming chambers are arranged outside the two strip-like flexible substrates 1a and 1b, but the film forming chambers may be arranged inside these. That is, a movable ground electrode is arranged outside the two substrates, a high voltage electrode surrounded by a wall is arranged inside, and the installation electrode pushes the substrate, so that the substrate is sealed at the end of the wall. Adhering to the material, an airtight state can be formed between the substrate and the wall.

本発明に係る薄膜積層体の製造装置の一実施の形態を模式的に示す平面図である。It is a top view which shows typically one Embodiment of the manufacturing apparatus of the thin film laminated body which concerns on this invention. 図1に示した装置の成膜室を模式的に拡大して示す断面平面図である。It is a cross-sectional top view which expands and shows typically the film-forming chamber of the apparatus shown in FIG.

符号の説明Explanation of symbols

1 帯状可撓性基板
5 プラズマ
10 薄膜光電変換素子の製造装置
11 巻出ローラ
12 巻取ローラ
21、24 フィードローラ
22、28 ピンチローラ
23、25、29 EPCローラ
26、27 ガイドローラ
31〜33 テンションモニタリングローラ
41〜53 成膜室
60 壁
61 シール材
62 高電圧電極
64 接地電極
65 基板ヒータ
DESCRIPTION OF SYMBOLS 1 Strip | belt-shaped flexible board | substrate 5 Plasma 10 Thin film photoelectric conversion element manufacturing apparatus 11 Unwinding roller 12 Winding roller 21, 24 Feed roller 22, 28 Pinch roller 23, 25, 29 EPC roller 26, 27 Guide roller 31-33 Tension Monitoring roller 41 to 53 Deposition chamber 60 Wall 61 Sealing material 62 High voltage electrode 64 Ground electrode 65 Substrate heater

Claims (4)

連続して配列された複数の成膜室に帯状可撓性基板を通し、各成膜室の基板出入口において停止した状態の前記基板に密閉部材を密着させて各成膜室内を気密状態にして前記基板の表面上に成膜し、次いで前記基板から前記密閉部材を離して前記気密状態を解除した後、この基板を次の成膜室の位置まで搬送する操作を繰り返し、前記基板の上に複数の異なる性質の薄膜を積層する薄膜積層体の製造方法において、各成膜室において前記基板に前記密閉部材を密着させて前記気密状態を形成する際、前記基板の巻き取り側の成膜室から巻き出し側の成膜室に向かって順次時間差を設けて前記形成を行うことを特徴とする薄膜積層体の製造方法。   A strip-shaped flexible substrate is passed through a plurality of film forming chambers arranged in succession, and a sealing member is brought into close contact with the substrate stopped at the substrate entrance / exit of each film forming chamber to make each film forming chamber airtight. After forming the film on the surface of the substrate and then releasing the sealing member from the substrate to release the airtight state, the operation of transporting the substrate to the position of the next film formation chamber is repeated, and the substrate is placed on the substrate. In the method of manufacturing a thin film laminate in which a plurality of thin films having different properties are stacked, when forming the airtight state by bringing the sealing member into close contact with the substrate in each film forming chamber, the film forming chamber on the winding side of the substrate A method for producing a thin film laminate, wherein the formation is performed by sequentially providing a time difference from the unwinding side to the film forming chamber on the unwinding side. 各成膜室において前記基板から前記密閉部材を離して前記気密状態を解除する際、前記基板の巻き出し側の成膜室から巻き取り側の成膜室に向かって順次時間差を設けて前記解除を行うことを特徴とする請求項1に記載の薄膜積層体の製造方法。   When releasing the airtight state by separating the sealing member from the substrate in each film forming chamber, the release is performed with a time difference sequentially from the film forming chamber on the unwinding side of the substrate toward the film forming chamber on the winding side. The method for producing a thin film laminate according to claim 1, wherein: 帯状可撓性基板の上に複数の異なる性質の薄膜を積層する薄膜積層体の製造装置において、前記基板が通るように連続して配列され、前記基板の表面上に成膜を行う複数の成膜室と、各成膜室の基板出入口において停止した状態の前記基板に密着して各成膜室内を気密状態にするとともに、成膜後には前記基板から離れて前記気密状態を解除する密閉部材と、前記基板を成膜室から次の成膜室へ搬送することを繰り返し行う基板搬送手段と、各成膜室において前記基板に前記密閉部材が密着して前記気密状態を形成する際、前記基板の巻き取り側の成膜室から巻き出し側の成膜室に向かって順次時間差を設けて前記気密状態の形成を行うように制御する制御手段とを備えたことを特徴とする薄膜積層体の製造装置。   In an apparatus for manufacturing a thin film laminate in which a plurality of thin films having different properties are laminated on a strip-like flexible substrate, a plurality of components that are continuously arranged so that the substrate passes therethrough and are formed on the surface of the substrate. A sealing member that closes the film chamber and the substrate stopped at the substrate entrance / exit of each film forming chamber to bring each film forming chamber into an airtight state and releases the airtight state away from the substrate after film formation And substrate transport means for repeatedly transporting the substrate from the deposition chamber to the next deposition chamber, and when the sealing member is in close contact with the substrate in each deposition chamber to form the airtight state, And a control means for controlling to form the airtight state by sequentially providing a time difference from the film forming chamber on the substrate winding side toward the film forming chamber on the unwinding side. Manufacturing equipment. 前記制御手段が、各成膜室において前記基板から前記密閉部材が離れて前記気密状態を解除する際、前記基板の巻き出し側の成膜室から巻き取り側の成膜室に向かって順次時間差を設けて前記気密状態の解除を行うように制御することを特徴とする請求項3に記載の薄膜積層体の製造装置。   When the control means releases the hermetic state by separating the sealing member from the substrate in each film forming chamber, a time difference is sequentially applied from the film forming chamber on the unwinding side of the substrate toward the film forming chamber on the take-up side. The apparatus for manufacturing a thin film laminate according to claim 3, wherein the control is performed so as to release the airtight state.
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