JP4779507B2 - Thin film pattern forming apparatus and thin film pattern forming method - Google Patents

Description

  The present invention relates to a thin film pattern forming apparatus capable of forming and removing a thin film, and a thin film pattern forming method using the thin film pattern forming apparatus.

  Processing techniques for correcting defects in photomasks used in the manufacture of semiconductor devices and display devices, such as displays using liquid crystal and organic electroluminescence (EL), and wiring correction of thin film transistor (TFT) substrates For example, a laser CVD (Chemical Vapor Deposition) method is known in which a thin film is formed only at a predetermined location by laser irradiation.

For thin film formation by laser CVD, since it is necessary to form a film in a predetermined atmosphere, the thin film pattern forming apparatus is generally configured to have a chamber that covers the entire substrate to be processed. ) In some cases, regardless of whether the film formation method is low-pressure film formation or normal pressure film formation, the inside of the chamber is once evacuated and the atmosphere is evacuated, and film formation is started after a predetermined condition is reached.
In this case, since the thin film pattern forming apparatus is required to have durability against a pressure difference between the inside and outside of the chamber, the apparatus is necessarily enlarged.

  On the other hand, a local exhaust device (local film formation / etching head) capable of shielding a local exhaust part (local film formation / etching part) by laser CVD, which is a main processing part for the substrate, from outside air by a gas curtain. The thin film pattern formation apparatus which can be reduced in size compared with the above-mentioned structure is proposed (for example, refer patent document 1 and 2).

  However, in the case of the configuration described in Patent Documents 1 and 2, since the local film forming / etching portion is fixed, the height of the local film forming / etching portion from the object to be processed (for example, a TFT substrate) is high. It is difficult to cope with the thickness unevenness and warpage of the processing object. Therefore, the gap between the local film formation / etching head and the substrate fluctuates due to the thickness unevenness and warpage, and the gas flow in the substrate arrangement part and the local film formation / etching part also fluctuates. It is also difficult to obtain a uniform film in film formation by the method.

  Further, in order to reduce fluctuations in gas flow due to unevenness in thickness, warpage, undulation, etc. of the substrate to be processed, it is preferable to increase the distance between the substrate and the local film formation / etching head. When the distance between the local film forming / etching head and the local film forming / etching head is increased, the gas flow rate of the gas curtain ejected from the local film forming / etching head toward the substrate is decreased. As the gas flow rate is reduced, the exhaust gas is substantially weakened. Therefore, the particulate decomposition products generated by the decomposition of the source gas in laser CVD are deposited on the substrate in and out of the local film forming / etching part, and should be corrected. There is also a drawback that the surrounding area is dirty.

  In response to this problem, the local deposition / etching head is self-levitated by jetting gas onto the support base, thereby not only shutting off the atmosphere of the local deposition / etching section from the outside air but also keeping the distance from the target substrate constant. A configuration to maintain the above is proposed. According to this configuration, it is possible to form a dense film without the above-described accumulation.

  However, since the laser CVD method is a thin film formation method that utilizes thermal decomposition of a material gas by laser light irradiation, if heat diffuses to the peripheral region on the substrate surface or in the substrate, the film is also formed on the peripheral region by this heat. It will be broken. That is, in particular, as shown in FIG. 11A, in a pattern of a plurality of underlying layers (for example, wirings) 102 on the substrate 101 that are close to each other, so-called OPEN defects are corrected by the disconnection portions 103 generated in some of the wirings 102. When performing, a conductive thin film is formed in the peripheral region 104 by thermal diffusion, and the adjacent wirings 102 are short-circuited to cause an electrical leak.

To solve this problem, as shown in FIGS. 11B and 11C, an insulating layer 105 is formed on the base layer (wiring) 102 in which the OPEN defect has occurred, and then a contact hole is formed in the insulating layer 105 by etching. Thus, there has been proposed a connection method for correcting an OPEN defect by forming a conductive thin film 106 in the contact hole and on the insulating layer 105 by a laser CVD method.
JP-A-8-222565 Japanese Patent Laid-Open No. 10-280152

  However, since correction by etching is usually performed immediately after the formation of the base layer (wiring) 102, when the connection method of forming the conductive thin film 106 on the insulating layer 105 as described above is employed, this connection For this reason, it is necessary to perform etching after the formation of the insulating layer 105, and the etching correction process involves two steps immediately after the formation of the wiring and after the formation of the insulating film, thereby complicating the process.

  When such a connection method is used, since the conductive thin film 106 formed by the CVD method is disposed on the insulating layer 105, the conductive thin film 106 is likely to be deteriorated due to oxidation or the like, or has a narrow contact. A serious problem that lowers reliability, such as a portion that is thinly formed in the hole, is likely to break.

  Also, with respect to the formation of the wiring pattern on the substrate itself, the conventional photolithography technique requires steps such as resist coating and cleaning, and each time it takes time to move the inside and outside of the chamber of the CVD apparatus. For this reason, there is an increasing demand for reducing the burden caused by these complicated operations.

  The present invention has been made in view of such a situation, and an object thereof is a thin film pattern forming apparatus that stably obtains a thin film such as a wiring in a predetermined shape, and a thin film using the thin film pattern forming apparatus. It is to provide a pattern forming method.

A thin film pattern forming apparatus according to the present invention includes at least a support base that supports a substrate that is a processing target, a local exhaust device that faces the support base, and a raw material supply means that serves as an auxiliary means for forming a thin film on the substrate. And a local evacuation unit serving as an auxiliary unit for removing the thin film on the substrate, a first laser beam for forming the thin film, and a light source device for outputting the second laser beam for removing the thin film. A common first flow path that is selectively connected to the raw material supply means and the local exhaust means and a local exhaust portion that faces the main processed portion of the substrate are formed in the exhaust device. And
In this thin film pattern forming apparatus, the raw material supply means and the local exhaust means that are selectively connected to the local exhaust device assist each processing alternately in accordance with the thin film formation and thin film removal processing in the local exhaust section. It is supposed to be configured.

A thin film pattern forming method according to the present invention comprises a thin film forming step of forming a thin film by crystal growth on a substrate while supplying a raw material gas from a raw material supply means of a thin film pattern forming device through a first flow path, A thin film removal step of shaping the pattern length into a pattern shape that is larger than the pattern thickness by removing at least a portion while exhausting from the local exhaust means of the thin film pattern forming apparatus through the first flow path. Yes and performs film formation process by laser CVD, and performing film removing step by laser etching.
In this thin film pattern forming method, a desired elongated pattern thin film is formed by continuously forming a thin film by crystal growth and removing at least a part thereof without going through other steps.

  According to the thin film pattern forming apparatus of the present invention, a common first flow path selectively connected to the raw material supply means and the local exhaust means in the local exhaust device, and the main processed portion of the substrate are opposed to each other. And a local exhaust part is formed. Therefore, for example, in the formation and partial removal of the thin film in the separation region where the substrate between the plurality of base layers on the workpiece is exposed, the raw material supply unit and the local exhaust unit are provided by a configuration in which a switching unit is provided in the first channel. The switching of the connection to the local exhaust part can be performed with less effort compared to the case where the flow paths are individually provided, and the formation and partial removal of the thin film can also be performed continuously. .

  According to the thin film pattern forming method of the present invention, a thin film forming step of forming a thin film by crystal growth while supplying a raw material gas from the raw material supply means of the thin film pattern forming apparatus through the first flow path, and forming the thin film into a thin film pattern And a thin film removing step of shaping into a predetermined shape by removing at least part of the apparatus while exhausting from the local exhaust means through the first flow path. Therefore, pattern formation based on direct deposition of a thin film on a workpiece, modification of a foundation layer provided on a substrate, especially each of a plurality of foundation layers extending next to each other as described later It is possible to correct a separation region such as a disconnection that has occurred by forming a thin film.

  Embodiments of the present invention will be described below with reference to the drawings.

<First Embodiment of Thin Film Pattern Forming Apparatus>
First, a first embodiment of a thin film pattern forming apparatus according to the present invention will be described with reference to FIGS.

  1A and 1B show a first embodiment of a thin film pattern forming apparatus according to the present invention. The thin film pattern forming apparatus 1 according to the present embodiment has a so-called laser CVD function and laser etching function.

The thin film pattern forming apparatus 1 according to the present embodiment is opposed to a support base 2 that supports a substrate 3 to be processed and a substrate 3 supported on the support base 2 as shown in FIG. 1A. A local exhaust device (local film forming / etching head having both a film forming function and a removing function) 4 for performing local film forming and etching, and a raw material for film forming on the local film forming / etching head. A material supply means 5 for supplying a gas, for example, a source gas such as tungsten carbonyl exemplified by W (CO) ₆ , and a dust (shaving residue) generated during etching from the local film formation / etching head 4 are discharged. And local exhaust means 6. The raw material supply means 5 and the local exhaust means 6 are arranged via a switching means (for example, a switching valve) 8 with respect to a first flow path 7 described later.

In the center of the local exhaust device 4, there are a transmission hole 20 and a transparent window 19 through which a laser beam L from the outside is transmitted, and a local region that is a main processing portion of the substrate 3 that is a processing target placed on the support base 2. An exhaust unit (local film forming / etching unit) 18 is provided, and the first flow path 7 connected to the local exhaust unit 18 communicates with either the raw material supply unit 5 or the local exhaust unit 6 via the switching unit 8. To be provided.
Here, the raw material supply means 5 and the local exhaust means 6 serve as auxiliary means for thin film formation and thin film removal on the substrate 3 as a processing object such as a TFT substrate placed on the support base 2, respectively. In the present embodiment, as will be described later, it becomes an auxiliary means for laser CVD and laser etching.
Note that the local exhaust unit 18 faces the lower surface of the local film formation / etching head 4 and, as shown in FIG. 1B, the inner side of the substantially concentric ring formed by the suction grooves constituting the ends of the exhaust channels 15 and 16. In addition, a substantially cylindrical space is formed between the transparent window 19 and the substrate 3.

Further, for example, compressed nitrogen gas (N ₂ ) is injected toward the support base 2 side to inject the local exhaust device 4 by static pressure, and the compressed gas is injected toward the support base 2 side. Exhaust means 10 and 11 for exhausting surplus gas (film formation gas, purge gas, etc.) out of the gas and local exhaust unit 18 supplied to the support base 2 side from ring-shaped exhaust passages (suction grooves) 15 and 16. And a purge gas supply means 12 for supplying a purge gas such as argon (Ar) to a local exhaust part (local film forming / etching part) 18 which is a main irradiated part of the laser beam.
Here, a purge gas flow path 17 connected to the local exhaust unit 18 is connected to the purge gas supply means 12, and by selecting the pressure, speed, position, angle, and the like for introducing the purge gas, foreign matter or the like generated by processing is removed. It is possible to suppress adhesion to the surface of the transparent window 19.

The compressed gas from the compressed gas supply means 9 is supported by the ring-shaped compressed gas supply path 14 constituting the supply path and the vent and the porous gas-permeable membrane 13 disposed in the opening thereof so as to face the local exhaust device 4. The flying height of the local exhaust device (local film forming / etching head) 4 is determined by selecting the balance between the pressure and flow rate of the compressed gas and the suction amount by each exhaust means, and the uniform exhaust toward the table 2. The
That is, in the thin film pattern forming apparatus 1 according to the present embodiment, the local exhaust device 4 has a static pressure floating pad configuration.

The local exhaust device 4 can be relatively displaced with respect to the substrate 3 that is an object to be processed on the support base 2, in addition to the compressed gas supply means 9 and the exhaust means 10 and 11, the raw material supply means 5, and the local exhaust. It is also possible to improve the floating rigidity by the means 6, the purge gas supply means 12, and the like.
Here, the floating rigidity is an adsorption force between the local exhaust device 4 and the workpiece, and if the floating rigidity is not sufficient, the height (gap) of the local exhaust device 4 with respect to the workpiece is determined. Since problems such as insufficient stability and insufficient mechanical or mechanical stability of the local exhaust device 4 occur, it is desirable to ensure sufficient floating rigidity.

  In the thin film pattern forming apparatus 1 having this configuration, for example, the laser light L from a laser light source device (not shown) is collected by an objective lens or the like and introduced into the local exhaust unit 18 through the transmission hole 20 having the transparent window 19. Processing such as thin film formation by laser CVD in the local exhaust part 18 and thin film removal by laser etching is possible.

  Here, the schematic operation of the thin film pattern forming apparatus of FIG. 1 will be described. In the case of forming a thin film by laser CVD on the substrate 3, compressed gas is supplied from the compressed gas supply means (supply source) 9 to the compressed gas supply path 14, and is injected to the substrate 3 side through the porous gas permeable membrane 13. The film formation / etching head 4 is lifted from the substrate 3 by a predetermined distance. In this state, the switching means 8 is switched to supply the film forming source gas from the source supply means (supply source) 5 through the first flow path 7 and the local exhaust unit 18 to the local area where the substrate 3 is to be formed. . At the same time, the laser beam L from the laser light source device is irradiated to the local area where the substrate 3 is to be formed through the transmission hole 20, the transparent window 19 and the local exhaust unit 18, and the source gas for film formation is thermally decomposed to localize the substrate 3. A CVD film is formed. On the other hand, at the time of film formation, the purge gas is supplied from the purge gas supply means (supply source) 12 through the purge gas flow path 17.

  The source gas for film formation supplied from the raw material supply means 5 and the purge gas (carrier gas) supplied from the purge gas supply means 12 are exhausted from the exhaust flow path 15 by the inner suction groove after use as a process application. Aspirated by means 11. Further, the compressed gas released from the porous gas permeable membrane 13 goes toward the inside of the local exhaust device 4, but is exhausted by the exhaust means 10 from the exhaust flow path 16 by the outer suction groove. With this configuration, it becomes possible to block outside air and make the process independent.

  When a part of the thin film pattern formed on the substrate 3 is locally removed by etching, similarly, the compressed gas from the compressed gas supply means 9 is jetted to the substrate 3 side through the porous gas permeable membrane 13 to form a local film / The etching head 4 is lifted from the substrate 3 by a predetermined distance. In this state, the switching means 8 is switched so that the first flow path 8 communicates with the local exhaust means 6 and the region of the substrate 3 to be etched is irradiated with the laser light L, and a part of the thin film pattern formed. Is removed thermally. At this time, dust (shaving residue) generated by etching is discharged by the local exhaust means 6 through the first flow path 7. Further, the purge gas suppresses foreign matter generated by etching from adhering to the inner surface of the transparent window 19.

FIG. 2 shows the measurement results of the compressed gas supply pressure and the flying height in an example of the local exhaust apparatus (local film forming / etching head) 4 having this configuration. In this measurement, exhaust was performed only by the exhaust means 10 and the exhaust speed was 500 L / min.
The flying height increases as the compressed gas pressure increases, and a flying height of 10 μm or more can be obtained at a pressure of 0.35 MPa. The rigidity at the time of ascent is very high, and when it ascends to 10 μm, even if an external force of 500 g is applied, it varies only about 1 μm. Further, even when a load of 10 kg was applied, the substrate and the local film formation / etching head did not come into contact with each other.
This is presumably because an air spring having a very large spring constant is formed between the substrate and the local film forming / etching head.

  Further, even when the substrate 3 arranged corresponding to the object to be processed is slid, a constant flying height can be secured by following the warpage and undulation of the substrate. With the configuration of 4, the distance between the substrate and the local film forming / etching head can be kept constant, and the film forming process conditions can be controlled independently of the shutoff of the outside air, so that a high quality thin film can be stably formed. It has been confirmed that is possible.

In addition, as in a normal CVD apparatus, by installing a pressure control valve in the exhaust unit by each exhaust means and each exhaust flow path, the pressure control of the laser CVD process and the gas partial pressure of the laser irradiation unit In addition, the flow rate can be controlled.
In addition, the optimum conditions for each process can be controlled independently of the outside air shutoff, and the exhaust means 10 and 11 can be configured to have a function of removing toxic gases. .

<Second Embodiment of Thin Film Pattern Forming Apparatus>
Next, a second embodiment of the thin film pattern forming apparatus according to the present invention will be described with reference to FIG.

FIG. 3 shows a second embodiment of the thin film pattern forming apparatus according to the present invention.
The thin film pattern forming apparatus 31 according to the present embodiment includes a local exhaust device (local film forming / etching head) 34 facing the substrate 33 on the support base 32 and a first light source device 35 as shown in at least FIG. And a second light source device 36. The first light source device 35 includes, for example, a CVD laser light source for forming a thin film. As the laser light source, for example, a laser light source having a wavelength of 355 nm, a pulse width of 25 nanoseconds (ns), a frequency of 24 kHz, and an output of 2 W is used. Can be used. In addition, the second light source device 36 has an etching (zapping) laser light source for removing a thin film, for example. As this laser light source, for example, a wavelength of 390 nm, a pulse width of 3 picoseconds (ps), a frequency of 1 kHz, The one with an output of 1 mW can be used.

Laser light from the first light source device 35 and the second light source device 36 is selectively introduced into the slit 38 as appropriate by a movable mirror 37, and through the lens 39, the mirror 40, and the objective lens 41, respectively. The substrate 33 is focused and irradiated as a laser beam L for laser CVD or laser etching.
A mirror 43 corresponding to the slit illumination 42 is provided between the mirror 37 and the slit 38, and the opening size of the slit can be selected. In addition, an observation illumination 44, a mirror 45, and an observation device 46 are provided on the opposite side of the mirror 40 from the objective lens 41, so that the condensed irradiation and the processing state can be confirmed.

The configuration of the local exhaust device 34 is substantially the same as the configuration of the local exhaust device 4 in the first embodiment described above, and the bottom surface of the local exhaust device 34 is supplied with compressed gas concentrically around the local exhaust unit 51. An end of each flow path connected to the means 52, the exhaust means 53, and the exhaust means 54 is provided.
Further, the raw material supply means 55 and the local exhaust means 56 for supplying a raw material gas such as tungsten carbonyl exemplified by W (CO) ₆ are selectively connected to the first flow path 57 by a switching means, for example, a switching valve 58. Has a configuration. Although not shown, a purge gas supply means is provided together with the flow path as in the first embodiment.

The raw material supply unit and the local exhaust unit serve as auxiliary units for forming and removing a thin film on the substrate to be processed, respectively. In this embodiment, the laser CVD method and the laser etching are performed, respectively. Auxiliary means.
In the present embodiment, a heater 59 is also provided in the local exhaust device 34, and the temperature of the gas around the local exhaust unit 51, that is, the temperature in the chamber of the thin film pattern forming apparatus 1 is made constant by this heater. It is possible to keep on.

In the thin film pattern forming apparatus 1 having this configuration, the substrate 33 can be processed by appropriately selecting two types of lasers for CVD and etching by switching mirrors. For example, when an etching laser is selected, the switching means 58 is switched so that the first flow path 57 is switched to the exhaust port so as to communicate with the local exhaust means 56, thereby generating dust (cut residue) generated during etching. It can be set as the structure which discharges. As a result, processing such as thin film formation by laser CVD in the local exhaust part 18 and thin film removal by laser etching becomes possible.
Since the operation of the local film formation / etching head 34 is the same as that of the local film formation / etching head 4 described above, a detailed description thereof will be omitted.

<First Embodiment of Thin Film Pattern Forming Method>
Next, a first embodiment of a thin film pattern forming method according to the present invention will be described with reference to FIG.
In the present embodiment, the embodiment will be described by taking as an example the case of using the thin film pattern forming apparatus 1 having the configuration shown in FIG.

First, as shown in FIG. 4A, a substrate 21 to be processed is prepared.
The substrate 21 is formed with, for example, a plurality of elongated pattern base layers that at least partially cover the surface of an insulating substrate, in this example, wirings 22 made of a conductive member. In the example, it is formed with a disconnection region 23. In the peripheral region 24 between the plurality of wirings 22, the insulating substrate is exposed.

Then, this board | substrate 21 is mounted on the support stand 2 which comprises the above-mentioned thin film pattern formation apparatus 1. FIG.
Subsequently, as shown in FIG. 4B, the floating of the local exhaust device 4 is started by the compressed gas supply means 9 and the exhaust means 10 and 11, and the stability of the flying height is confirmed, and the workpiece (not shown) is removed. The conductive thin film 25 is moved under the local exhaust device 4 and includes at least the disconnection region 23 where the insulating substrate is exposed in the substrate 21, and in this embodiment includes a part of the wiring 22 that defines the disconnection region 23. For example, a film is formed by a laser CVD method, and a thin film forming process is performed.
In this step, the raw material gas such as tungsten carbonyl exemplified by W (CO) ₆ is supplied from the first flow path 7 by connecting the raw material supply means 5 to the first flow path 7 by the switching means described above. The thin film is formed while supplying a purge gas such as Ar from the purge gas flow path 17.

Here, in the laser CVD method, as described above, the thin film 25 is formed on the substrate 21 by thermally decomposing the raw material from the raw material supply means 5 by laser light irradiation. The shape is not limited to the shape shown in FIG. 3B, and there is a possibility that a thinner portion (not shown) is formed in the peripheral region 24 (shown by an alternate long and short dash line).
When such a thin portion is generated as an excess portion, there arises a problem that the plurality of wirings 22 are electrically short-circuited by the conductive thin film 25.

However, subsequently, as shown in FIG. 4C, at least part of the peripheral region 24 (shown by a two-dot chain line) in the conductive thin film 25 where the surplus portion is formed is removed by, for example, laser etching by laser light irradiation. The thin film removal process is performed. In this way, since the thin film 25 is formed into a slender shape, that is, a pattern shape in which the pattern length is larger than the pattern thickness, this surplus portion is removed so that the conductive thin film 25 has a desired shape and is disconnected. The wiring 22 can be repaired.
In this thin film removal step, the laser is supplied while supplying only the purge gas from the purge gas supply flow path 17 with the first flow path 7 of the thin film pattern forming apparatus 1 connected to the local exhaust means 6 by the switching means described above. The conductive thin film is removed by being thermally blown by light irradiation.

  As shown in FIG. 4D, the thin film forming process and the thin film removing process described above are repeated even when the plurality of wirings 22 have a disconnection region 23 (not shown) at positions close to each other. By doing so, the conductive thin film 25 can be processed only within a desired range, and the plurality of disconnected wires 22 can be repaired collectively. In this case, as long as each disconnection region 23 is not extremely separated from each other, the conductive thin film is continuously formed on each disconnection region 23, and then at least a part of the excess portion located in the peripheral region 24 of each thin film 25 is removed. Is preferably carried out continuously.

<Second Embodiment of Thin Film Pattern Forming Method>
Next, a second embodiment of the thin film pattern forming method according to the present invention will be described with reference to FIG.
In the present embodiment, the embodiment will be described by taking as an example the case where the thin film pattern forming apparatus 31 having the configuration shown in FIG. 3 is used.

First, as shown in FIG. 5A, a substrate 61 to be processed is prepared.
The substrate 61 is formed with, for example, a plurality of elongated pattern base layers covering at least a part of the surface of the insulating substrate, in this example, wiring 62 made of a conductive member, and a plurality of wirings 62 extending adjacent to each other. Are formed with separation regions, in this example, a disconnection region 63, at positions close to each other. Between the plurality of wirings 62 extending adjacent to each other is a peripheral region 64, and in the disconnected region 63 and the peripheral region 64, the insulating substrate is exposed.

Subsequently, the substrate 61 is placed on the support base 32 constituting the thin film pattern forming apparatus 31 described above.
Subsequently, as shown in FIG. 5B, at least a part of each of the wirings 62 and the disconnection region 63 where the insulating substrate is exposed in the substrate 61, and in the present embodiment, between the plurality of wirings 62 extending adjacent to each other. A conductive thin film 65 is formed by, for example, a laser CVD method including the wiring 62 defining the disconnection region 63, and a thin film forming process is performed.
In this process, W (CO) ₆ is exemplified by the raw material supply means 55 and the purge gas supply means (not shown) in a state where the raw material supply means 55 is connected to the first flow path 57 by the switching means 58. A thin film is formed while supplying a source gas Ar such as tungsten carbonyl.

  Here, in the thin film forming step in the present embodiment, the film is formed by laser CVD over a wide range over the plurality of wirings 62 extending adjacent to each other and the disconnection region 63 corresponding to each of the wirings 62. Therefore, the conductive thin film 65 is also formed in the peripheral region 64 between the wirings 62, and the present invention is not limited to this, and a thinner portion is also formed in the other peripheral region 24, and these become surplus portions. Thus, there is a possibility that the plurality of wirings 62 are electrically short-circuited by the conductive thin film 65 (illustrated with a one-dot chain line).

However, subsequently, as shown in FIG. 5C, at least a part of the conductive thin film 65 in the peripheral region 24 where the surplus portion is formed (shown by a two-dot chain line) is removed by, for example, laser etching by laser light irradiation. The thin film removal process is performed. In this way, the conductive thin film 65 is formed into a slender shape, that is, a pattern shape in which the pattern length is larger than the pattern thickness. Therefore, each wiring extending adjacent to each other is removed by removing this surplus portion. The conductive thin film 65 corresponding to 62 can have a desired shape, and a plurality of disconnected wires 65 can be repaired collectively.
In this step, the thin film is removed while only Ar is supplied while the first flow path 57 of the thin film pattern forming apparatus 31 is connected to the local exhaust means 56 by the switching means 58 described above.

<Third Embodiment of Thin Film Pattern Forming Method>
Next, a third embodiment of the thin film pattern forming method according to the present invention will be described with reference to FIG.
In the present embodiment, the embodiment will be described by taking as an example the case where the thin film pattern forming apparatus 31 having the configuration shown in FIG. 3 is used.

  As shown in FIG. 6A, in the substrate 71 according to this embodiment, the shape of the plurality of wirings 72 does not necessarily have a uniform width, and the wiring width has an inclination or a bent shape. Compared to the above example, it has a more complicated shape.

  Even in such a case, as shown in FIG. 6B, the conductive film thin film 75 is formed over the plurality of wirings 72 and the disconnection region 73 extending adjacent to each other, and subsequently, as shown in FIG. 6C. The excess part of the conductive thin film 75 is removed. Thus, the normal pattern shape can be faithfully reproduced by the conductive thin film 75 without requiring a mask corresponding to the wiring 72 having a complicated shape.

  That is, in this case, the conductive thin film 75 is simultaneously formed on the wiring 72 and the disconnection region 73 extending adjacent to each other, and the peripheral region 74 where the insulating substrate is exposed between these wirings 72 is formed. In addition, the conductive thin film 75 is intentionally formed, and thereafter, as in the first embodiment described above, a thinner film (shown by a one-dot chain line) generated by thermal diffusion is removed, and the peripheral region 74 in the formed peripheral area 74 is deliberately formed. By removing the thin film 75 by etching, it is possible to form a desired conductive thin film 75 in the plurality of disconnection regions 73 with fewer film formation steps than the number of disconnection regions 73.

<Fourth Embodiment of Thin Film Pattern Forming Method>
Next, a fourth embodiment of the thin film pattern forming method according to the present invention will be described with reference to FIGS.

7A and 7B are a schematic top view and a schematic cross-sectional view, respectively, of a substrate 81 to be processed in this embodiment.
As shown in FIGS. 7A and 7B, the substrate 81 according to this embodiment includes first and second underlayers 82a and 82b that extend independently with an insulating layer 89 interposed therebetween in the thickness direction. It is in a state of being electrically short-circuited by the foreign matter 88 mixed in.

Even in such a case, correction processing can be performed by the above-described thin film pattern forming apparatus and the thin film pattern forming method according to the present invention.
First, as shown in FIGS. 8A and 8B, only the first underlayer 82a in the vicinity of the second underlayer 82b is removed by laser etching while exhausting from the local exhaust means through the first flow path.

  Subsequently, by switching the switching means of the thin film pattern forming apparatus and performing a thin film forming process for crystal growth while supplying the raw material gas from the raw material supply means through the first flow path, as shown in FIGS. 9A and 9B, An insulating thin film 85a is formed to cover the isolation region 83 of the first base layer 82a.

Subsequently, the switching means of the thin film pattern forming apparatus is switched again, and the insulating thin film formed wide in the thin film formation as shown in FIGS. 10A and 10B while exhausting through the first flow path from the local exhaust means. A thin film removing step is performed in which the peripheral surplus portion of 85a is removed by laser etching to shape the insulating thin film 85a into a shape having a pattern length larger than the pattern thickness.
Subsequent to this thin film removal step, a conductive thin film 85b that secures electrical continuity of the first underlayer 82a is formed across the insulating thin film 85a. In the present embodiment, overlapping description is omitted, but the conductive thin film 85b can also be patterned by performing this process as a thin film forming process and subsequently performing a thin film removing process for shaping the pattern shape. .

  As in the above embodiment, according to the thin film pattern forming apparatus and the thin film pattern forming method according to the present invention, for example, a separation region (so-called OPEN defect) such as a disconnection generated in a wiring (underlayer) made of a conductive material is corrected. It becomes possible to do. In addition, even when a foreign material or the like straddles between the underlying layers extending adjacent to each other or the insulating layers sandwiching the insulating layer (short circuit; so-called CLOSE defect), the foreign matter is applied to the underlying layer. For example, the defect can be corrected by removing together with the portion by etching by laser light irradiation and subsequently performing a thin film forming step and a thin film removing step.

Usually, the wiring pitch (line & space) of a display device such as a liquid crystal display (LCD) is 3 μm to 5 μm. However, according to the thin film pattern forming apparatus and the thin film pattern forming method according to the present invention, Fine processing is possible compared to this width, and a planar shape such as a wiring pattern can be arbitrarily shaped.
Therefore, the thin film pattern forming apparatus and the thin film pattern forming method according to the present invention are applied to defect correction of a photomask used for manufacturing a display device such as a liquid crystal display or an organic electroluminescence display, and wiring correction of a TFT substrate. In particular, it is considered to be particularly suitable.

Further, in the thin film pattern forming method according to the present invention, since the thin film forming step and the thin film removing step can be performed simultaneously or continuously in the same apparatus, an insulating layer is finally formed. Prior to this, normal (for example, correction processing only by etching) can be performed continuously, and the manufacturing process can be simplified and the manufacturing cost can be reduced.
Therefore, according to the thin film pattern forming apparatus and the thin film pattern forming method according to the present invention, it is possible to perform more processing on the object to be processed before the formation of the insulating layer. In addition, the yield of photomasks and thin film transistors that can be obtained is improved.

<Example>
Examples of the present invention will be described.

First, an insulating substrate to be processed is prepared, and wirings made of a plurality of conductive members covering at least a part thereof are formed on the substrate. A disconnection region is provided in the middle of the continuous base layer, and the substrate is exposed in the disconnection region and the peripheral region with each of the elongated base layers extending adjacent to each other as the peripheral region.
Subsequently, the substrate on which the base layer is formed is placed on a support base of the thin film pattern forming apparatus, and a height of 10 μm is obtained at a pressure of 0.35 MPa by jetting compressed gas from a local placement device facing the support base. Then, the local placement device is caused to float and the substrate is moved under the local placement device.

Thereafter, a thin film forming process by a laser CVD method is performed including a part of the separation region where the substrate is exposed and a base layer in contact therewith.
In this thin film forming step, the thin film is formed in a state where the first flow path of the thin film pattern forming apparatus is communicated only with the raw material supply means by the switching means. A laser beam having a wavelength of 355 nm, a pulse width of 25 nanoseconds (ns), a frequency of 24 kHz, and an output of 2 W was used.

After that, among the thin film and the thinner film generated by thermal diffusion, at least a part of the peripheral region that becomes the surplus part is removed by, for example, laser etching by laser light irradiation, and the thin film removal process is performed. The thin film has an elongated shape.
In this thin film removing step, the thin film is removed in a state where the first flow path of the thin film pattern forming apparatus is communicated only with the local exhaust means by the switching means. A laser beam having a wavelength of 390 nm, a pulse width of 3 picoseconds (ps), a frequency of 1 kHz, and an output of 1 mW was used.

  In this way, by performing the same processing as in the above-described embodiment, a desired pattern shape having a pattern length larger than the pattern thickness is formed on the processing target (substrate in this example). The thin film could be obtained by a thin film forming process and a thin film removing process, which are continuous processes only in the chamber.

As described above, the embodiments and examples of the thin film pattern forming apparatus and the thin film pattern forming method according to the present invention have been described. However, the numerical conditions such as the material used, the amount thereof, the processing time, and the dimensions are only suitable examples, and are described. The dimensional shape and the arrangement relationship in each figure used are also schematic. That is, the present invention is not limited to this embodiment.
For example, in the above-described embodiment, the first embodiment of the thin film pattern forming method is exemplified by the case where the thin film pattern forming apparatus 1 is used, and the second and third embodiments of the thin film pattern forming method are Although the case where the thin film pattern forming apparatus 31 is used has been described as an example, the embodiments of the respective forming methods can be performed by any of the pattern forming apparatuses 1 and 31.

In addition, for example, the base layer can be formed of an insulating material, and the thin film forming step and the thin film removing step can be performed in the same manner as in the above-described fourth embodiment to perform pattern formation with the insulating material. .
In addition, the pattern length can be obtained by directly performing a thin film forming process, for example, in the form of a solid film over an area larger than the finally obtained pattern shape on the substrate, and then performing a thin film removing process. It is also possible to form a thin film having a pattern shape that is larger than the pattern thickness.

In the above-described embodiment, an example in which two types of laser light source devices are separately provided for the thin film forming process and the thin film removing process has been described. However, these processes are integrated into one and both processes are performed using the same light source. You can also. In this case, the thin film is formed by a light source having a higher output than the light source configuration in the second light source device 36 in FIG. It is preferable to configure a light source device in the pattern forming apparatus.
Further, for example, even when it is necessary to form a multilayer film, the present invention can form a multilayer film in a desired position shape by repeating the above-described thin film formation step and thin film removal step, etc. Various modifications and changes can be made.

1A and 1B are a schematic configuration diagram of an example of a thin film pattern forming apparatus according to the present invention, and a schematic bottom view of a local exhaust device that constitutes the thin film pattern forming apparatus. It is a schematic diagram which shows the relationship between the floating amount of a local exhaust apparatus and the supply pressure of the compressed gas for floating in the structure of an example of the thin film pattern formation apparatus which concerns on this invention. It is a schematic block diagram of the other example of the thin film pattern formation apparatus which concerns on this invention. AD is process drawing which shows an example of the thin film pattern formation method which concerns on this invention. AC is process drawing which shows the other example of the thin film pattern formation method which concerns on this invention. AC is process drawing which shows the other example of the thin film pattern formation method which concerns on this invention. A and B are a schematic top view and a schematic cross-sectional view, respectively, for explaining another example of the thin film pattern forming method according to the present invention. A and B are a schematic top view and a schematic cross-sectional view, respectively, for explaining another example of the thin film pattern forming method according to the present invention. A and B are a schematic top view and a schematic cross-sectional view, respectively, for explaining another example of the thin film pattern forming method according to the present invention. A and B are a schematic top view and a schematic cross-sectional view, respectively, for explaining another example of the thin film pattern forming method according to the present invention. A to C are process diagrams for explaining a conventional thin film pattern forming method.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Thin film pattern formation apparatus, 2 ... Support stand, 3 ... Substrate, 4 ... Local exhaust apparatus (local film-forming / etching head), 5 ... Raw material supply means, 6 ... Local exhaust means, 7 ... first flow path, 8 ... switching means, 9 ... compressed gas supply means, 10 ... exhaust means, 11 ... exhaust means, 12 ... purge gas supply means , 13 ... porous ventilation membrane, 14 ... compressed gas supply path, 15 ... exhaust passage (suction groove), 16 ... exhaust passage (suction groove), 17 ... purge gas passage , 18 ... Local exhaust part (local film forming / etching part), 19 ... Transparent window, 20 ... Transmission hole, 21 ... Substrate (processing object), 22 ... Underlayer (wiring) ), 23... Separation region (disconnection region), 24... Peripheral region, 25.・ ・ ・ Support base, 33 ... Substrate, 34 ... Local exhaust device (local deposition / etching head), 35 ... First light source device, 36 ... Second light source device, 37. .... Mirror, 38 ... slit, 39 ... lens, 40 ... mirror, 41 ... objective lens, 42 ... illumination for slit, 43 ... mirror, 44 ... illumination for observation 45 ... mirror, 46 ... observation device, 51 ... local exhaust, 52 ... compressed gas supply means, 53 ... exhaust means, 54 ... exhaust means, 55 ... raw material Supply means 56 ... Local exhaust means 57 ... First flow path 58 ... Switching means 59 ... Heater 61 ... Substrate (object to be processed) 62 ... Underlayer (Wiring), 63 ... separation area (disconnection area), 64 ... peripheral area, 65 ... thin film, 71 ·・ Substrate (object to be processed), 72... Underlayer, 73... Separation region (disconnection region), 74... Peripheral region, 75. 82a ... first underlayer (wiring), 82b ... second underlayer (wiring), 83 ... isolation region (disconnection region), 85a ... insulating thin film, 85b ... conductive , Thin film, 88 ... foreign matter, 89 ... insulating layer, 101 ... substrate (workpiece), 102 ... underlayer (wiring), 103 ... separation region (disconnection), 104 ..Peripheral region, 105 ... insulating layer, 106 ... thin film

Claims (14)

At least a support for supporting a substrate that is a workpiece;
A local exhaust device facing the support,
Raw material supply means serving as auxiliary means for forming a thin film on the substrate;
Local evacuation means serving as an auxiliary means for thin film removal on the substrate;
A light source device that outputs a first laser beam for forming the thin film and a second laser beam for removing the thin film ;
A common first flow path that is selectively connected to the raw material supply unit and the local exhaust unit and a local exhaust unit that faces a main processing portion of the substrate are formed in the local exhaust unit. Ru Tei
Thin film patterning device. The first laser beam and said second laser beam, Ru is emitted from the same light source in the light source apparatus
Thin film pattern forming apparatus according to 請 Motomeko 1. The local exhaust device, is a self-floating type by the gas injection relative to the support base
Thin film pattern forming apparatus according to 請 Motomeko 1 or 2. A thin film forming step of forming a thin film by crystal growth on a substrate while supplying a raw material gas through a first flow path from a raw material supply means of a thin film pattern forming apparatus;
A thin film that is shaped into a pattern shape in which the pattern length is larger than the pattern thickness by removing at least part of the thin film while exhausting it from the local exhaust means of the thin film pattern forming apparatus through the first flow path. and the removal step, possess,
The thin film forming step is performed by laser CVD, and the thin film removing step is performed by laser etching.
Thin film pattern forming method. An underlayer was provided on at least a part of the surface of the substrate .
Thin film pattern forming method according to 請 Motomeko 4. A plurality of underlayers are provided on at least a part of the surface of the substrate,
In the thin film forming step, the thin film is formed including at least separation regions of the plurality of base layers,
In the thin film removing step, among the thin film, remove excess portion formed on the peripheral region excluding said isolation region and said base layer
Thin film pattern forming method according to 請 Motomeko 5. In the thin film formation step, intends row formation of the thin film contains at least a plurality of said isolation region
Thin film pattern forming method according to 請 Motomeko 6. Said isolation region, Ru disconnecting section der wiring composed of the underlying layer
Thin film pattern forming method according to 請 Motomeko 6 or 7. By the thin film forming step and the thin film removing step, form a wiring pattern
Thin film pattern forming method according to any one of 請 Motomeko 4-8. Wherein the thin film is Ru conductive thin film Der
Thin film pattern forming method according to any one of 請 Motomeko 4-9. Wherein the thin film is Ru insulating thin film Der
Thin film pattern forming method according to any one of 請 Motomeko 4-9. The underlayer, Ru conductive thin film Der
請 Motomeko 5 to the thin film pattern forming method according to any one of 9. The underlayer, Ru insulating thin film Der
請 Motomeko 5 to the thin film pattern forming method according to any one of 9. That having a step of removing the underlying layer for shaping by removing at least a portion of the underlying layer
請 Motomeko 5 to the thin film pattern forming method according to any one of 9.