JP2006278728A - Conductive film modifying method, laminated structure, and thin film transistor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To ensure the continuity of a conductive film around its modified area when the conductive film is modified. <P>SOLUTION: The conductive film modifying method comprises a first process of forming the end of a first conductive film 6 formed on the surface of an underlying layer 5 into a gentle slope, and a second process of forming a second conductive film 10 spreading over the gentle slope and the exposed part of the underlying layer 5. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a conductive film correction method for correcting a conductive film formed on the surface of a base layer into a predetermined shape, and a laminated structure and a thin film transistor that can be obtained by this correction method.

  In manufacturing a semiconductor, a liquid crystal, an organic electroluminescence (EL) display, or the like, it is difficult to completely form a thin film into a predetermined shape during the manufacturing process. In particular, for a conductive film, not only does resistance increase due to deformation or long-term reliability decreases, but there is a risk of short circuit or disconnection, and a method for correcting the deformation is required.

For example, a thin film transistor (Thin Film Transistor), that is, a wiring portion on a TFT substrate, has a problem of disconnection due to the presence of a foreign substance or the like in the middle of the wiring.
These foreign substances are generated when, for example, metal fine particles constituting a manufacturing apparatus or fine dust existing in a clean room where the manufacturing is performed adheres to a wiring forming portion during a transport process during manufacturing.

  When wiring is formed by thin film formation technology such as laser CVD (Chemical Vapor Deposition), there is a high risk that the shape and nature of foreign matter will cause disconnection of the wiring due to steps and various adverse effects on the wiring. . Therefore, after removing the foreign matter by laser irradiation, repair is performed by laser CVD or the like from the removed portion, that is, from the end of the conductive film constituting the wiring to the underlying layer on which the conductive film is formed, for example, the exposed portion of the substrate, for example, the disconnected portion. It is desirable to perform wiring by forming a wiring for wiring, that is, a wiring film. However, when the foreign matter is removed, the end of the wiring is steeply inclined, that is, substantially vertical due to this influence, so that there is a problem in that step breakage or excessive thinning occurs during the CVD film formation.

On the other hand, a method has been proposed in which a contact hole is provided on the wiring after the interlayer insulating film process next to the wiring process and connected.
JP 2003-280021 A

However, in this method, since the connection film such as the contact hole forming portion is not covered with the interlayer insulating film, there is a problem in long-term reliability, and since the connection length becomes long, the wiring resistance increases. There is a problem.
Further, when a planarizing film is formed on the interlayer insulating film, the concave shape of the contact hole may affect the upper surface flatness of the planarizing film.
Therefore, it is difficult to say that the method of providing the contact hole after forming the interlayer insulating film is optimal.

  In view of the above-mentioned problems, the present invention corrects a defective part such as a broken part or a deformed part caused by the presence of foreign matter in the wiring part, and even when a steep slope is formed at the wiring end part. The present invention provides a conductive film correcting method that can be carried out stably and a laminated structure including a thin film transistor that can be obtained by this conductive film correcting method.

The conductive film correction method according to the present invention includes a step of shaping an end portion of the first conductive film formed on the surface of the underlayer into a gentle slope shape, at least the gentle slope, and the proximity to the gentle slope. Forming a second conductive film over the exposed portion of the base layer.
Prior to the formation of the second conductive film, the end of the first conductive film is shaped into a gentle slope that forms a bend angle different from at least perpendicular to the exposed portion of the base layer, thereby Step disconnection or instability of the second conductive film due to a step between the first conductive film and the base layer can be suppressed.

Moreover, the present invention is characterized in that, in the conductive film correcting method, the shaping is performed by laser processing.
By performing shaping by laser processing, energy can be selectively applied only to a desired portion even when the conductive film forms a fine pattern.

The present invention, in the conductive film correction method, the laser processing, and performing at 0.3 J / cm ² or more 3.0 J / cm ² or less of the laser energy.
By performing laser processing in this laser energy range, the thermal diffusion during processing and the shape after processing in the first conductive film can be selected.

The present invention is also characterized in that, in the conductive film correcting method, the second conductive film is formed by a low pressure film formation technique at a pressure lower than atmospheric pressure and higher than vacuum.
By forming the second conductive film by a low pressure film formation technique, the composition and state of the atmosphere during film formation can be selected.

Moreover, the present invention is characterized in that, in the conductive film correcting method, the base layer has a lower thermal conductivity than the first conductive film.
By making the thermal conductivity of the underlayer smaller than that of the first conductive film, it is possible to suppress at least heat deterioration and deformation of the underlayer during shaping of the first conductive film.

In the conductive film correction method, the first conductive film may include at least a first layer on the outermost surface, a second layer formed between the first layer and the base layer, It is characterized by having.
The method for correcting a conductive film according to the present invention is not limited to the case where the first conductive film is a single layer, but each layer is formed not only when it has a multilayer structure or when a part of the single layer is oxidized. Different shaping can be applied to each layer depending on differences in the properties of the main material to be used, such as resistance, thermal conductivity, oxidation resistance, ionization tendency and the like.

Moreover, the present invention is characterized in that, in the conductive film correcting method, at least a part of the surface of the base layer is made of an insulator or a semiconductor.
According to the method for correcting a conductive film according to the present invention, it is possible to selectively correct the shape of only the conductive film when the substrate constituting the base layer is made of an insulator or a semiconductor.

Moreover, the present invention is characterized in that, in the conductive film correcting method, the first conductive film is tapered by the gentle slope.
Forming the gentle slope of the first conductive film described above at a plurality of ends generated on the underlayer, or with respect to the ends of two or more first conductive films facing each other with a foreign object sandwiched therebetween, Alternatively, the first conductive film can be formed into a tapered shape having good symmetry by forming gentle slopes having substantially the same inclination with respect to both end portions of one first conductive film. .

Further, the present invention is characterized in that, in the conductive film correcting method, the foreign matter in contact with the first conductive film and / or the exposed portion is removed in advance independently of the shaping.
Independent of the shaping of the first conductive film, the shape stability of the second conductive film can be ensured, for example, by removing foreign matters in advance.

In the laminated structure according to the present invention, the end of the first conductive film formed on the surface of the underlayer is shaped into a gentle slope, and at least the gentle slope and the base layer adjacent to the gentle slope A second conductive film is formed over the exposed portion.
According to this configuration, the adhesion between the second conductive film and the first conductive film is improved, and the second conductive film is formed by reducing the level difference between the base layer and the first conductive film. can do.

In the thin film transistor according to the present invention, the end of the first conductive film formed on the surface of the substrate or the high resistance layer formed on the substrate is shaped into a gentle slope, and at least the gentle slope, A second conductive film is formed over the base or the exposed portion of the high resistance layer close to the gentle slope.
According to this configuration, the level difference between the base layer and the first conductive film is reduced, and between the second conductive film on the base layer and the second conductive film on the first conductive film. Can be ensured.

  According to the method for correcting a conductive film according to the present invention, the step of shaping the end portion of the first conductive film formed on the surface of the base layer into a gentle slope shape, and the gentle slope and the exposed portion of the base layer And the step of forming the second conductive film, and thus the correction for ensuring the continuity of the conductive film in the vicinity of the correction portion can be performed.

  That is, for example, in the correction of a wiring with foreign matter or the like, a stable laser CVD connection capable of ensuring reliability can be achieved by preventing a steep slope of the wiring end and making it a low-angle taper shape. It is possible to perform stable wiring correction that does not cause a new disconnection or local thinning for a defect of a disconnected wiring, which is referred to as “a”.

  According to the laminated structure of the present invention, the end of the first conductive film formed on the surface of the underlayer is shaped into a gentle slope, and at least the gentle slope and the base layer adjacent to the gentle slope Since the second conductive film is formed over the exposed portion, the stability of the film and the yield can be improved by ensuring the continuity of the second conductive film.

  According to the thin film transistor of the present invention, the end of the first conductive film formed on the substrate or the surface of the high resistance layer formed on the substrate is shaped into a gentle slope, and at least the gentle slope and the gentle slope are formed. Since the second conductive film is formed over the substrate adjacent to the slope or the exposed portion of the high resistance layer, the second conductive film is prevented from being deformed or broken, and the resistance of the conductive film due to wiring or electrodes is reduced. According to the present invention, it is possible to obtain many important effects such as avoiding the increase and improving the yield.

  The method for correcting a conductive film according to the present embodiment uses a laser repair apparatus having a thin film removal by laser processing and a connection function by a laser CVD method. For a disconnected part or a wiring defect part, the local exhaust part including the irradiated part of the laser beam irradiated to the defect part is set to a vacuum state or an atmosphere of a gas other than nitrogen, and a foreign material is produced using a processing laser. After the wire is removed, the wiring end is processed into a low-angle gentle slope or a taper formed so that the gentle slope faces each other, thereby preventing the wiring end from being steeply inclined, and the subsequent laser CVD method. This is a technique for performing stable wiring correction without disconnection or thinning at the connection portion.

1A and 1B show a top view and a cross-sectional structure of a member 7 to be a laser processed product, which is finally formed into a laminated structure such as a thin film transistor by the method for correcting a conductive film according to the present embodiment. As this member 7, what is used as display panels, such as a liquid crystal or an organic electroluminescent display, can be mentioned, for example.
In the present embodiment, as an example, the source wiring formed on the insulating base layer 5 on the gate wiring formed in advance, that is, the case where the disconnected portion 8 of the first conductive film 6 is corrected is taken as an example. An example of a method for correcting a conductive film according to the present invention will be described. In the present embodiment, the width of the first conductive film 6 indicated by a in FIG. 1A is 10 μm, and the width between the first conductive films 6 indicated by b is 5 μm.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the present invention is not limited to these embodiments.

  2A and 2B are a schematic configuration diagram showing a configuration of an example of a processing apparatus suitable for carrying out the conductive film correction method according to the present embodiment, and a local exhaust apparatus that constitutes the processing apparatus, respectively. It is a schematic bottom view.

  This processing apparatus is a so-called laser repair apparatus. For example, in the manufacture of a liquid crystal or organic electroluminescence display, a tungsten (W) film, for example, is formed on the defective portion 8 of the wiring pattern 6 of the laser processed product, that is, the member 7 by laser CVD. It is used to correct a defect by forming or removing a wiring short-circuit portion or the like. For this reason, a CW laser for laser CVD and a short pulse width laser for processing are provided as laser light sources.

  In this embodiment, the laser processing apparatus 1 is a processing apparatus capable of performing laser irradiation and CVD as shown in FIG. 2A, and includes at least a laser light source 2, a local exhaust device 3, and a laser light source 2. And a support base 4 for supporting an object to be irradiated with laser light (member 7 to be described later). At least the local exhaust device 3 and the support base 4 are disposed, for example, in a common chamber (not shown).

  The laser processing apparatus 1 configured as described above has a function of removing a thin film by irradiating, for example, a pulsed laser beam to a member having a conductive thin film formed on an underlayer, and a material gas such as tungsten carbonyl is allowed to flow. In this state, it also has a function of forming a metal film such as tungsten by a laser CVD method of irradiating a CW (Continuous Wave) laser. And the local exhaust part which is an irradiation position of the laser beam on a board | substrate is evacuated, or inert gas, such as argon, is supplied.

  As shown in FIGS. 2A and 2B, the local exhaust device 3 has, for example, a transmission hole 39 for the laser beam L at the center thereof, and the compressed nitrogen is directed toward the support base 4 around the center. Compressed gas supply means 31 that statically floats the local exhaust device 3 by injecting, exhaust means 32 that exhausts the compressed gas injected toward the support base 4 from the ring-shaped suction groove 36 together with outside air, and a pulse to be described later From the purge gas supply means 33 for supplying the purge gas to the local exhaust part 37 close to the irradiated part of the laser beam, the supply means 34 for the material gas that becomes the source gas of laser CVD in the local exhaust part 37, and the compressed gas supply means 31 A compressed gas supply path and a ring-shaped compressed gas supply path 31a constituting a ventilation hole and a porous ventilation means 35 disposed in the opening of the compressed gas supply path 31a. Constructed.

A transparent window 38 that is hermetically sealed and transmits the laser light L is disposed at a required depth position in the transmission hole 39 that forms the optical path of the laser light L of the local exhaust device 3.
With this configuration, the local exhaust part 37 is formed in the space part between the transparent window 38 and the arrangement part of the member 7 in the region surrounded by the suction groove 36. In addition to the raw material gas by the material gas supply means 34, the local exhaust part 37 is introduced with a purge gas by the purge gas 33. By selecting the pressure, speed, position, angle, etc. for introducing the purge gas, the transparent window 38 is selected. It is possible to suppress the occurrence of deposits on the surface of the film.

Further, the local exhaust device 3 can be displaced relative to the member 7 on the support 4, and the material gas supply means 34, the purge gas supply means 33, and the exhaust means 32 can improve the floating rigidity. Figured.
Here, the floating rigidity is an adsorption force between the local exhaust device 3 and, for example, the base 5 constituting the member 7, and when the floating rigidity is not sufficient, the local exhaust apparatus 3 has a high strength relative to the base 5. In other words, problems such as insufficient gap stability and insufficient mechanical or mechanical stability of the local exhaust system 3 may occur. desirable.

On the other hand, on the upper surface of the support 4, a member 7 having a base layer 5 serving as a base and a first conductive film 6 constituting a wiring or the like is disposed facing the local exhaust device 3. In the present embodiment, the member 7 is a TFT substrate, and the first conductive film 6 is made of a material having a higher thermal conductivity than the base layer 5. The underlayer 5 is made of an insulator or a semiconductor.
Examples of the material for forming the base layer 5 include glass made of SiO ₂ . On the other hand, the material for forming the first conductive film 6 preferably includes at least one of metals such as aluminum (Al), molybdenum (Mo), and titanium (Ti). In addition to the single metal described above, an alloy or a multilayer film containing at least one of these metals can be used.

A method for correcting the conductive film according to the present embodiment will be described.
First, the member 7 to be irradiated with the short pulse width laser light L is placed on the support base 4 and then moved below the local exhaust device 3. At this time, the compressed gas supply means 31 injects, for example, 0.2 MPa of compressed nitrogen through the compressed gas supply path 31a and the porous ventilation means 35, and starts the exhaust from the exhaust means 32, and the local exhaust device. It is preferable to avoid collision with the moving member 7 by allowing 3 to float with sufficient static pressure.

Next, 50 ccm of argon gas is introduced from the purge gas supply means 33, and finally irradiation with the laser light L is performed by a local exhaust means (not shown) which is a main pressure adjusting means of the exhaust means 32 and the local exhaust part 37. In addition to sufficiently depressurizing the atmosphere at a predetermined position of the member 7 serving as the irradiated portion in the above, that is, the local exhaust portion 37, and adjusting the pressure of the portion other than the local exhaust portion 37, that is, the peripheral portion, Ensure height and rigidity between. The height can be set to a distance of 10 μm from the surface of the member 7 or the substrate 5, for example.
In the present embodiment, the atmosphere at a predetermined position of the member 7, that is, the local exhaust part 37 has a height from the transparent window 38 in the local exhaust device 3 to the member 7 placed on the support base 4, In addition, it is considered that a substantially cylindrical space is formed inside the concentric ring formed by the suction groove 36.

  Next, while observing the laser irradiation part through the transparent window 38 of the local exhaust device 3, the support 4 is moved, and the first conductive film 6 formed on the surface of the base layer 5 of the member 7 is disconnected or deformed. The foreign material 8 is moved to a desired position so that it finally becomes the irradiated portion 9 of the short pulse width laser light L. Thereafter, a short pulse width laser beam L is emitted from the laser light source 2 while continuing the local exhaust to the local exhaust unit 37 by the local exhaust means. The short pulse laser beam L is selected by the mirror 21, is condensed by the lens 22, is irradiated to the foreign matter 8 through the transparent window 38 of the local exhaust device 3, and the foreign matter 8 is removed. The power is readjusted, and the end of the first conductive film 5 is irradiated with laser light, so that the end of the first conductive film 6 is shaped into a gentle slope.

Next, gaseous tungsten carbonyl, which is a material gas for laser CVD, is introduced into the material supply source 51 together with 50 sccm of argon (Ar) gas, for example, 7 × 10 ⁻³ sccm. As shown in FIG. 2C, the second conductive film 10 is formed by using a low-pressure film formation technique such as laser CVD over the gentle slope formed at the end of the film 6 and the exposed part of the base layer 5. Form.

Note that, in the above-described shaping of the first conductive film 6 by the laser beam, a laser energy higher than the laser energy for removing the foreign matter 8 is generally required. This is because when removing foreign matter, it can be removed by irradiating multiple times even with low energy, while more energy is required at one time when melting the conductive film to form a gentle slope. It is because it becomes.
Further, as a specific value of the laser energy in the shaping of the first conductive film 6 by gentle slopes formed, it is desirable to select the 0.3 J / cm ² or more 3.0 J / cm ² or less. In the case of 3.0 J / cm ² or less, the reaction due to laser irradiation is not a thermal process but a so-called non-lattice absorption process, and the conductive film may be vaporized without the progress of melting due to thermal diffusion. This is because, in the case of 0.3 J / cm ² or more, the processing accuracy is lowered, and there is a possibility that a problem may occur in the shape due to swelling around the laser irradiation portion. Note that the underlayer 5 preferably has a lower thermal conductivity than the first conductive film 6 in order to stably perform melting by laser irradiation.

Further, when the first conductive film 6 is a multilayer film, a first layer (not shown) on the outermost surface and a second layer (not shown) formed between the first layer and the base layer 5. In this case, a more preferable gentle slope formation, for example, formation of tapered shapes that face each other across the disconnection portion can be performed.
For example, when the second layer is a low resistance layer having a lower resistance than the first layer, the first layer having a high resistance is removed by flowing during shaping by laser irradiation, and the surface resistance is reduced. The resistance to a high-frequency signal that tends to flow particularly on the surface of the wiring can be reduced. This can be performed more smoothly, for example, by configuring the second layer as a low thermal conductive layer having a lower thermal conductivity than the first layer.

Further, when the first layer is formed with at least the oxide of the second layer, the already oxidized first layer has higher oxidation resistance than the second layer. . On the other hand, the first layer can also be configured to have, as the main element, an element having a higher ionization tendency than the main element constituting the second layer. Also in these cases, for example, the first layer, which has been made highly resistant by being previously oxidized, is flowed and eliminated, and the resistance on the surface side of the wiring 6 is made lower, so that it tends to flow particularly on the surface of the wiring. Resistance to a strong high-frequency signal can be reduced.
Such a multilayer film is usually configured for the purpose of preventing deterioration or oxidation of the second layer, which is the original conductive layer. However, according to the conductive film correction method of this embodiment, the exposure of the first layer is prevented. For example, since it can be limited to a very short time from the low-pressure film formation to the planarization film formation, it is possible to manufacture the laminated structure 11 while avoiding impairing the original purpose of the multilayer film. .

Here, in the pulse laser beam, the energy is concentrated in a shorter time as the pulse width is smaller, so that the maximum value of energy per pulse is improved.
Therefore, when irradiation is performed with a laser beam having a smaller pulse width, processing can be performed in a short time even with an energy density smaller than that of the conventional case. Further, according to this processing method, since the laser irradiation time per pulse is short, the laser light irradiation time per pulse is shortened, so that the heat generated in the irradiated portion by the laser light is transferred to the peripheral portion. Is also suppressed.

Therefore, since the pulse width of the short pulse width laser light L can avoid the generation of heat in the material in at least one of the base 5 and the first conductive film 6 constituting the member 7 in 10 picoseconds or less, It is preferable to select 10 picoseconds or less.
Further, when it is necessary to suppress the consumption of the laser light source 2, the mirror 21, the lens 22, etc., that is, the shortening of the service life, etc., the laser light L For example, it is preferable to select 2 picoseconds or more without extremely reducing the pulse width L.

  When laser processing is performed on the member 7 by the laser processing apparatus described above, the purge gas can be supplied from the purge gas supply means 33 during the irradiation as well as before the irradiation with the short pulse laser beam. In the laser processing by the film correction method, it is not always necessary to supply the purge gas during the irradiation with the short pulse laser beam.

That is, conventionally, the surface of the transparent window 38 on the side of the local exhaust part 37 is likely to be contaminated due to adhesion of vaporized dust generated during laser irradiation. In order to reduce the labor required for maintenance, vaporization generated by supplying purge gas toward the transparent window 38, for example, as shown by an arrow in FIG. Although it has been necessary to reduce the adhesion of vaporized dust by forming a state in which dust does not easily reach the surface of the transparent window 38, in the case of the conductive film correcting method according to the present invention, the laser beam particularly during the removal of foreign matter is required. By selecting the pulse width to be 10 picoseconds or less and selecting the energy per pulse to be 0.1 J / cm ² or less, Therefore, it is possible to suppress vaporized dust from adhering to the surface of the transparent window 38 without supplying gas, so that maintenance labor and burden can be reduced without supplying purge gas during laser light irradiation. It is done.

<Example>
Subsequently, an embodiment of a method for correcting a conductive film according to the present invention will be described.

First, while observing through the transparent window 39 of the local exhaust device 3, the support table 4 is operated, and a desired defect correction position of the member 7 to which the foreign matter 8 adheres, as shown in FIG. The laser irradiation position is moved to the part.
Next, the size of the slit provided between the mirror 21 and the lens 22 is adjusted to the size of the foreign material 8, and the processing power of the laser beam having a wavelength of 390 nm and a pulse width of 3 picoseconds, that is, a laser power of 0.1 J / cm ² or more. As shown in FIG. 3B, the attenuator is set so as to become a source, and as shown in FIG. 3B, for example, a source 7 by a base layer 5 and a conductive film 6 that finally constitutes a member 7 to be a thin film transistor Foreign matter 8 adhering to the wiring pattern is removed.
Then, at the same laser, combined slit size to the wiring end, the processing power is set lower than 0.3 J / cm ² or more 3.0 J / cm ^2, the opposite sides via the foreign matter 8 of wire 6 As shown in FIG. 3C, a gentle slope (in this case, a low-angle taper) is formed by irradiating the end portions with laser light multiple times.

The reason why a low-angle taper can be formed by this method is that the metal at the end of the wiring is melted by irradiating the end of the wiring with a high energy laser of 0.5 J / cm ² or more. At this time, since the glass has a low thermal conductivity, the temperature rises and the molten metal cannot move. However, on the wiring side, since the thermal conductivity is large and the wiring temperature is low, the molten metal can move.

Next, as shown in FIG. 3D, by using a CW laser beam having a wavelength of 355 nm and performing a connection by a laser CVD method with a slit size of 10 μm 2 and a scan speed of 10 μm / s under the conditions of 20000 Hz and 0.1 W. Then, the second conductive film 10 is formed.
Since the taper angle at the end of the wiring is formed at a low angle, disconnection of the second conductive film as the laser CVD connection film and local thinning are eliminated, so that a long-term reliable laser CVD connection film can be formed. A membrane is possible. The gentle slope can be formed at a predetermined angle with respect to the surface of the underlayer, and can be, for example, a gentle slope of 10 ° to 80 °.

<Comparative example>
A comparative example for the correction method of the present invention will be described.
That is, in this comparative example, the conditions for the laser irradiation for removing foreign substances and the CVD for forming the second conductive film are the same as those in the above-described embodiment, and the end of the first conductive film is formed before the formation of the second conductive film. This is an example in which correction is attempted by a conventional method without shaping the part into a gentle slope.

First, as shown in FIG. 4A, the foreign material 108 adheres to the member 107 in which the first conductive film 106 on the base layer 105 is disconnected. Removal is performed to expose the underlying layer 105 between the ends of the first conductive films 106 facing each other as shown in FIG. 4B.
Next, connection was attempted by formation of the second conductive film by CVD under the same conditions as in the above-described embodiment, but due to the steep slope of the end of the first conductive film 106, the second conductive film was The connection between the second conductive film 110b on the conductive film 106 and the second conductive film 110a on the exposed portion of the base layer 105 may be difficult unless the second conductive film is extremely thick. confirmed.

  As mentioned above, although embodiment of the electrically conductive film correction method which concerns on this invention was described, the modification method of the electrically conductive film which concerns on this invention is not restricted to this embodiment.

For example, in the above-described embodiment, the first and second conductive films are wirings, and the case of correcting the wiring has been described as an example. However, according to various purposes, the conductive film, for example, the shape of a metal is corrected. Can be applied.
In addition to the laser CVD method, various other methods such as chemical vapor deposition, physical vapor deposition, metal film deposition, and vacuum deposition can be cited as low-pressure deposition techniques. The pressure at the time can be appropriately selected not only under reduced pressure conditions but also at a pressure in the vicinity of atmospheric pressure, for example, about 80 to 120 kPa.

The tungsten carbonyl compounds include W (CO ₆ ), [W (C ₅ H ₅ ) (CO ₃ )] ₂ , [W (C ₅ H ₅ ) -X (CO) ₃ ], [W (CRR ') (CO) ₅ ] and the like can be mentioned, but as long as it has a carbonyl group, for example, a molybdenum (Mo) compound can be used.
In addition, the characteristics of the first layer and the second layer related to the above-described ionization tendency are not limited to oxidation, and various reactions such as a reaction forming a salt and a reaction generally called corrosion are easily performed. With respect to the thickness, it can be cited as a characteristic that supports the conductive film correction method according to the present invention.

In addition, the high resistance layer serving as the base layer can be formed of either a semiconductor or an insulator, and the conductive film only needs to have conductivity. For example, when the base layer is an insulating layer, The modification method of the present invention can also be applied using a conductive film as a semiconductor thin film.
In addition, the present invention can be variously modified and changed such that the gentle slope and the taper can be formed not only in the length direction of the conductive film, for example, the wiring but also in the width direction.

A and B are respectively a schematic top view and a schematic cross-sectional view of an example of a member 7 to be a laser processed product, which is finally formed into a laminated structure such as a thin film transistor by the method for correcting a conductive film according to the present invention. Each of A and B is a schematic block diagram showing the configuration of an example of a processing apparatus suitable for carrying out the method for correcting a conductive film according to the present invention, and a schematic bottom view of a local exhaust device that constitutes the processing apparatus. A to D are process diagrams used for explaining an example of a conductive film correcting method according to the present invention. FIGS. 4A to 4C are process diagrams for explaining a correction method as a comparative example for the correction method of the present invention.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Laser processing apparatus, 2 ... Laser light source, 3 ... Local exhaust apparatus, 4 ... Support stand, 5 ... Underlayer (base | substrate), 6 ... 1st electrically conductive film ( Wiring), 7 ... member (TFT substrate), 8 ... foreign matter, 9 ... irradiated portion, 10 ... second conductive film, 11 ... laminated structure, 21 ... mirror , 22 ... lens, 31 ... compressed gas supply means, 31a ... compressed gas supply path, 32 ... exhaust means, 33 ... purge gas supply means, 34 ... material gas supply means, 35 ... Porous ventilation means, 36 ... Suction groove, 37 ... Local exhaust part, 38 ... Transparent window, 39 ... Transmission hole, 105 ... Underlayer, 106 ... First , 107, member, 108, foreign matter, 110a, 110b, second conductive film

Claims (16)

A step of shaping the end of the first conductive film formed on the surface of the underlayer into a gentle slope;
A method of correcting a conductive film, comprising: forming a second conductive film over at least the gentle slope and the exposed portion of the base layer adjacent to the gentle slope. The conductive film correction method according to claim 1, wherein the shaping is performed by laser processing. The conductive film correction method according to claim 2, wherein the laser processing is performed with a laser energy of 0.3 J / cm ² or more and 3.0 J / cm ² or less. The method for correcting a conductive film according to claim 1, wherein the formation of the second conductive film is performed by a low-pressure film formation technique at a pressure lower than atmospheric pressure and higher than vacuum. The conductive film correction method according to claim 1, wherein the underlayer has a lower thermal conductivity than the first conductive film. The said 1st electrically conductive film has at least the 1st layer of the outermost surface, and the 2nd layer formed between the said 1st layer and the said foundation | substrate layer. Conductive film correction method. The conductive film correction method according to claim 6, wherein the second layer is a low-resistance layer having a lower resistance than the first layer. The method for correcting a conductive film according to claim 6, wherein the second layer is a low thermal conductive layer having a lower thermal conductivity than the first layer. The conductive film correction method according to claim 6, wherein the second layer is a hardly oxidizable layer having higher oxidation resistance than the first layer. The conductive film correction method according to claim 6, wherein the first layer has an oxide formed by oxidation of a material constituting the second layer. The conductive film correction method according to claim 6, wherein the first layer has, as a main element, an element having a higher ionization tendency than the main element constituting the second layer. The method for correcting a conductive film according to claim 1, wherein at least a part of the surface of the underlayer is made of an insulator or a semiconductor. The conductive film correction method according to claim 1, wherein the first conductive film is tapered by the gentle slope. 2. The conductive film correction method according to claim 1, wherein the foreign matter in contact with the first conductive film and / or the exposed portion is removed in advance independently of the shaping. The end of the first conductive film formed on the surface of the underlayer is shaped into a gentle slope,
A laminated structure in which a second conductive film is formed at least over the gentle slope and the exposed portion of the base layer adjacent to the gentle slope. The end of the first conductive film formed on the surface of the substrate or the high resistance layer formed on the substrate is shaped into a gentle slope,
A thin film transistor, wherein a second conductive film is formed at least over the gentle slope and the exposed portion of the base or the high resistance layer adjacent to the gentle slope.

Images