JP4503324B2 - Plasma processing equipment - Google Patents

Description

  The present invention relates to a plasma processing apparatus and a plasma processing method having a plasma generating means for producing an active layer and wiring on a substrate, and more particularly, plasma of a plasma processing apparatus that performs film formation processing, etching processing, or surface modification processing. It relates to generating means.

  Thin film transistors (TFTs) formed over an insulating substrate are widely applied to integrated circuits and the like. In particular, a display portion of a thin display device typified by a liquid crystal television receiver or the like is often used as a switching element, and its application is expanded to a portable terminal, a large display device, and the like.

  In a conventional display device using a TFT, a film is formed on the entire surface of the substrate, and the TFT is formed using a photolithography process, an etching process, an ashing process, and the like. More than half of such manufacturing processes are often performed in vacuum equipment.

  In recent years, large-sized liquid crystal display devices have attracted attention, and as a result, the mother glass has become larger in area, and the vacuum device has also increased in size, which requires larger-scale capital investment.

  Under such circumstances, by using a method of applying a pulsed electric field as means for generating plasma, plasma discharge is performed by maintaining glow discharge without shifting to arc discharge even under atmospheric pressure. In recent years, it has attracted attention.

  When plasma is generated under atmospheric pressure, high-density plasma is generated, so that particles are very easily generated. This particle causes a defect such as a point defect or a line defect in a display unit in the display device. The present invention has been made in view of such circumstances, and an object thereof is to provide a plasma processing apparatus that suppresses the generation of particles.

  Plasma is generated only in the minimum necessary area for plasma processing on the processing substrate. The minimum necessary area is an area where island-like semiconductor areas (active layers) and wiring are formed in the entire area of the TFT substrate on which the semiconductor integrated circuit is formed. The area ratio to the entire area of the substrate is only a few percent. ~ Tens of percent. Therefore, the plasma processing apparatus is provided with a plurality of plasma generating means for generating minute plasma limited to the minimum necessary area, and the relative position between the plasma generating means and the processing substrate is changed to limit the plasma to a predetermined area. By performing processing, the generation of particles is minimized.

By generating plasma only in the region similar to island-shaped semiconductor regions and wiring, not only the generation of particles is suppressed, but also direct plasma treatment can be performed in a limited region, so the photolithography process is It is not necessary, and the process can be shortened.
Moreover, the size of the electrodes constituting the plasma generating means may not be the same, and may be mixed as required.

  A specific configuration of the present invention includes: a plurality of plasma generating units having a plurality of opposed electrodes that perform film formation, etching, or surface modification; and a process gas between the plurality of opposed electrodes. And a plurality of plasma generating units arranged in a line in one or a plurality of rows.

  Further, a plurality of plasma generating means having a plurality of opposing electrodes that perform film formation, etching, or surface modification treatment on a processing substrate, and a gas that introduces a process gas between the plurality of opposing electrodes A plurality of plasma generating means are arranged in a line in one or a plurality of rows, and at least one of the plurality of opposed electrodes has a length of a side on the processing substrate side Is a plasma processing apparatus characterized by being 1 mm or less.

In addition, a process gas is introduced between a plurality of plasma generating units having a plurality of opposed electrodes that perform film formation, etching, or surface modification treatment on the treatment substrate, and the plurality of opposed electrodes. Gas supply means, and means for forming a pattern on the processing substrate by the plurality of plasma generation means, and the plurality of plasma generation means are linearly arranged in one or a plurality of rows, At least one of the plurality of opposed electrodes is a plasma processing apparatus, wherein a length of a side on the processing substrate side is not more than 10 times, preferably not more than a square, of the line width of the pattern.
In the above structure, the pattern is a pattern of a wiring, an active layer, a contact hole, or a portion for performing a surface modification process.

  In the above configuration, the plasma generating means has a plurality of minute electrodes, and a voltage applied to a predetermined electrode at a predetermined timing by connecting the plurality of electrodes to a pulse power source and a computer via a control circuit. It has the means to control. In addition, by synchronizing the timing of the voltage applied to the predetermined electrode and the scanning of the electrode unit composed of the substrate stage on which the processing substrate is fixed or the plurality of plasma generating means, a predetermined amount on the processing substrate is determined. It has a means for controlling the generation of plasma of the electrode.

  Further, in the above-described configuration, means such as a sensor for performing alignment of the processing substrate or the pattern on the processing substrate and one of the plasma generating means is provided.

  As another configuration, the electrodes of the plurality of plasma generating means are processed using a focused ion beam apparatus, photolithography, or laser drawing apparatus with an alloy such as stainless steel or brass, or a conductive material such as copper or aluminum. be able to. That is, by performing these processes, it is possible to use a plasma generation processing apparatus having plasma generation means in which the shape and size of the electrodes are controlled. For example, by using a plasma processing apparatus having a plurality of plasma generating means having different electrode sizes, the film forming process, the etching process, or the surface modification process can be performed under optimal conditions as appropriate.

  As another configuration, the film formation process, the etching process, or the surface modification process is performed by applying a pulsed electric field between the electrodes under atmospheric pressure or a pressure near atmospheric pressure.

  The pressure near atmospheric pressure means a range of 600 to 106000 Pa, but is not necessarily limited to this value, and includes a low positive pressure state due to gas flow or the like.

  The plasma processing apparatus here refers to all apparatuses utilizing plasma, such as film forming apparatuses such as CVD and sputtering, processing apparatuses such as etching and ashing, and surface processing apparatuses such as cleaning and surface modification. And

  The present invention includes a semiconductor device manufactured using the above-described plasma processing apparatus and a semiconductor manufacturing method. In addition, the semiconductor device manufacturing method is characterized in that one island-like semiconductor layer on the processing substrate is formed by plasma from one plasma generating means, and the semiconductor device manufactured by the method is included.

  By using a plasma processing apparatus composed of a plurality of minute plasma generating means, it becomes possible to generate plasma only in the necessary minimum region in the processing substrate, and to suppress generation of particles generated during the plasma processing. be able to. As a result, the performance of a product manufactured by performing plasma processing using the plasma processing apparatus of the present invention is improved, and the yield is improved.

In addition, plasma treatment can be performed on a predetermined region, and as a result, a photolithography process can be eliminated. As a result, the production time of a product manufactured by performing plasma processing using the plasma processing apparatus of the present invention is shortened, and the number of processes is reduced, so that the production cost is also reduced.

  Embodiments of the present invention will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it is easily understood by those skilled in the art that modes and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments below.

(Embodiment 1)
The present invention relates to a method for performing processing by generating plasma only in a region where an active layer is formed on a substrate or a region where wiring is formed, or a plasma processing apparatus capable of performing processing. . A specific description of a plasma processing apparatus having a plurality of minute parallel plate electrodes will be given below with reference to FIG.

  A plasma chamber is formed by facing two substrates 102 made of a material such as quartz, ceramic, or resin. A plurality of minute metal electrodes 103 having a rectangular shape are formed on the surface of the substrate 102. It is desirable that the length of at least one side of a minute metal electrode having a rectangular shape is 1 mm or less. Therefore, these fine metal electrodes are preferably finely processed using photolithography, a focused ion beam apparatus, a laser drawing apparatus, or the like.

  Specifically, an electrode can be formed by processing an alloy such as stainless steel or brass, or a conductive material such as copper or aluminum using photolithography, a focused ion beam apparatus, or a laser drawing apparatus. At this time, by controlling the shape and size of the electrode to be processed, it is possible to form a plasma processing apparatus having a plasma generating means suited to the purpose. For example, when forming a wiring pattern on a substrate, various types of wiring patterns can be performed at a time by performing plasma processing using a plasma processing apparatus comprising plasma generating means configured with electrodes corresponding to the width of the wiring pattern. Can be formed simultaneously.

  For the metal electrode 103, an alloy such as stainless steel or brass, or a conductive material such as copper or aluminum is used. The plurality of metal electrodes 103 are formed inside one of the opposed substrates, and the opposed side is an integrated electrode. In the present invention, the opposing side of the electrode unit is not limited to the electrode integrated with the substrate, and a plurality of metal electrodes can be formed on the opposing substrates. In addition, it is desirable to provide a gap so that gas is introduced into each electrode separately.

  Further, the electrode surface is usually covered with a dielectric film. For the dielectric film, zirconium dioxide, titanium dioxide, barium titanate, or a mixture thereof is used. The gap between the opposing electrodes is preferably 1 mm or less, but may be 1 mm or more because it depends on the material of the dielectric material, the thickness of the dielectric film, the applied voltage, and the like. In this case, an insulating resin or the like may be used to process the plasma outlet small.

  In this way, one minute plasma generating means is constituted by one minute metal electrode 103 provided on one of the opposed substrates and the electrode provided on the other of the opposed substrates, and a plurality of minute plasmas are formed. One electrode unit is composed of the plasma generating means. The processing substrate 101 is installed at a position where plasma generated from the electrode unit can sufficiently come into contact. When there is a concern about plasma damage, it is desirable to use an electrode structure in which plasma does not directly touch the processing substrate and to spray process gas onto the processing substrate by optimizing the supply gas pressure.

  Next, the process gas supply will be described. A process gas needs to be supplied between the electrode unit and the processing substrate 101, and a gas supply mechanism and an exhaust mechanism are provided. FIG. 2 schematically shows the flow of the process gas supplied by the gas supply mechanism. In FIG. 2A, a process gas is blown from the plasma chamber to the processing substrate 101. In FIG. 2B, a process gas is passed between the electrode unit and the processing substrate 101. Further, when performing plasma treatment under atmospheric pressure, it is preferable to provide an exhaust mechanism and exhaust the process gas by the method shown in FIGS. 2C and 2D.

As the process gas, for example, SiH ₄ , Si ₂ H ₆ , or a gas diluted with hydrogen, helium, or the like is used during Si film formation. Reactive gases such as CF ₄ , SF ₆ , Cl ₂ , and O ₂ are used for etching and surface modification.

  Plasma is generated in the plasma chamber by applying a pulsed electric field between the electrodes with the process gas introduced into the electrode unit. The present invention is not necessarily limited to atmospheric pressure, and can be implemented in a vacuum atmosphere. In this case, an electric field is applied by a high-frequency power source. Each minute metal electrode 103 is connected to a pulse power source 104 and a computer 106 via a control circuit 105, and by applying a pulsed electric field between predetermined electrodes at a predetermined timing, a predetermined position on the processing substrate is obtained. It is possible to generate a very small plasma. A relay circuit may be incorporated in the control circuit 105 as necessary. The control circuit itself may be formed on the substrate 102.

  Further, alignment means for aligning the position of the plasma generating means to the processing substrate or a pattern formed on the processing substrate using the plasma processing apparatus is necessary, and the computer 106 is also connected to the alignment means 107. ing.

  The plasma processing proceeds by moving the processing substrate 101 and the electrode unit in the X and Y directions and changing their relative positions. By using the plasma processing apparatus having the above configuration, it is possible to perform plasma processing limited to the minimum necessary region in the processing substrate, and to suppress generation of particles.

(Embodiment 2)
In the first embodiment, the electrode unit of the plasma processing apparatus has a structure having a plurality of metal electrodes and an integrated counter electrode. In the present embodiment, FIG. 5 shows a plasma processing apparatus having another structure. It explains using.

  FIG. 5A shows a perspective view of the plasma generating means 506 having a cylindrical electrode, and FIGS. 5B to 5D show cross-sectional views of the cylindrical electrode.

  In FIG. 5B, a dotted line indicates a path of the process gas 516, 501 and 502 are electrodes made of a conductive metal such as aluminum or copper, and the first electrode 501 is connected to the power source 503. Yes. Note that a cooling system for circulating cooling water may be connected to the first electrode 501. When the cooling system is provided, it is possible to prevent a temperature rise when continuously performing the surface treatment by circulating the cooling water, and to improve the efficiency by the continuous treatment.

  The second electrode 502 has a shape surrounding the first electrode 501 and is electrically grounded. The first electrode 501 and the second electrode 502 have a cylindrical shape having nozzle-like gas pores at their tips.

  A process gas 516 is supplied from a gas supply mechanism (gas cylinder) 505 through a valve 504 to the space between the first electrode 501 and the second electrode 502. Then, the atmosphere in this space is replaced, and when a high frequency voltage (10 to 500 MHz) is applied to the first electrode 501 by the power source 503 in this state, plasma is generated in the space.

  When a reactive gas containing chemically active excited species such as ions and radicals generated by the plasma is sprayed toward the surface of the workpiece 513, a predetermined surface treatment is performed on the surface of the workpiece 513. It can be performed.

  Note that the process gas filled in the gas supply mechanism (gas cylinder) 505 is appropriately set according to the type of surface treatment performed in the processing chamber. The exhaust gas 507 is introduced into the exhaust mechanism 509 via the valve 508.

  Further, not all of the process gas 516 is consumed in the plasma treatment process, and unreacted gas is also mixed in the exhaust gas 507. In general, exhaust gas is detoxified by an exhaust gas treatment device and discarded or recovered. However, by making unreacted gas components in the exhaust gas recirculate as a process gas 516 through a filter 510, the use efficiency of the process gas is improved. The amount of exhaust gas discharged can be suppressed.

5C and 5D show a cylindrical plasma generating means 506 having a cross section different from that in FIG. 5C, the first electrode 501 is longer than the second electrode 502, and the first electrode 501 has an acute-angle shape, and FIG. The plasma generating means shown in (1) has a shape in which a reactive gas containing a chemically active excited species generated between the first electrode 501 and the second electrode 502 is jetted to the outside. In the present embodiment, the cylindrical plasma generation means has been described as an example. However, the plasma generation means is not particularly limited to a cylindrical shape, and any shape of plasma generation means may be used.
FIG. 5E shows a plurality of plasma injection ports arranged in a uniaxial direction in the plasma generating means.

  The distance between the tip of the plasma generating means and the surface of the object to be processed must be kept at 3 mm or less, preferably 1 mm or less, more preferably 0.5 mm or less. For this purpose, for example, a distance sensor may be used to keep the distance between the plasma generating means and the surface of the workpiece constant.

  The present invention using a plasma processing apparatus that can operate under atmospheric pressure does not require time for evacuation or release to the atmosphere required for the decompression apparatus, and does not require a complicated vacuum system. In particular, when using a large substrate, the chamber is inevitably enlarged, and it takes a long time to reduce the pressure in the chamber. However, this plasma processing apparatus can be used under atmospheric pressure. It is effective in terms of cost reduction.

(Embodiment 3)
In this embodiment, when a semiconductor device is manufactured using a light-transmitting substrate as a processing substrate, the substrate size is 600 mm × 720 mm, 680 mm × 880 mm, 1000 mm × 1200 mm, 1100 mm × 1250 mm, 1150 mm × 1300 mm, A large area substrate such as 1500 mm × 1800 mm, 1800 mm × 2000 mm, 2000 mm × 2100 mm, 2200 mm × 2600 mm, or 2600 mm × 3100 mm is used.

  By using such a large substrate, the manufacturing cost can be reduced. As a substrate that can be used, a glass substrate such as barium borosilicate glass or aluminoborosilicate glass represented by Corning # 7059 glass or # 1737 glass can be used. Further, as other substrates, various translucent substrates such as quartz, semiconductor, plastic, plastic film, metal, glass epoxy resin, and ceramic can be used.

(Embodiment 4)
In this embodiment, a method for manufacturing a semiconductor device using the plasma treatment apparatus described in any of Embodiments 1 to 2 will be described with reference to FIGS. Note that the display device exemplified here is an active matrix display device in which each pixel is provided with a TFT.

  FIG. 6A shows a step of forming a conductive film to be a gate electrode and a wiring. First, a substrate 700 on which a TFT and a light emitting element are formed is prepared. Specifically, for the substrate 700, for example, a glass substrate such as barium borosilicate glass or alumino borosilicate glass, a quartz substrate, a ceramic substrate, or the like can be used. Alternatively, a metal substrate or a semiconductor substrate with an insulating film formed on the surface thereof may be used. A substrate made of a synthetic resin having flexibility such as plastic generally tends to have a lower heat resistant temperature than the above substrate, but can be used as long as it can withstand the processing temperature in the manufacturing process. . The surface of the substrate 700 may be polished and planarized using a technique such as a CMP method.

  Next, a conductive film 701 serving as a gate electrode and a wiring is formed over the surface of the substrate 700 by a sputtering method, a CVD method, or a droplet discharge method. Specifically, a conductive material such as a metal such as aluminum, titanium, tantalum, molybdenum, silver, gold, or copper, or a metal compound is used as the conductive film. Here, the droplet discharge method means a method of forming a predetermined pattern by discharging droplets containing a predetermined composition from the pores, and includes an ink jet method and the like in its category. By using a droplet discharge method, it is possible to form various wirings typified by signal lines and scanning lines, TFT gate electrodes, light emitting element electrodes, and the like without using an exposure mask. When the droplet discharge method is used, the conductive film is not necessarily formed over the entire substrate, and may be selectively formed in the vicinity of a region where the gate electrode and the wiring are formed.

  After that, a mask pattern 702 for forming gate electrodes and wirings is formed over the conductive film 701. The mask pattern 702 can be formed by selectively discharging a composition by a droplet discharge method. Alternatively, a resist may be applied to the entire surface of the substrate, and a mask pattern may be selectively formed by photolithography. At this time, an unnecessary portion of the resist can be etched by the plasma processing apparatus. In the case of using a plasma processing apparatus, etching does not have to be performed on the entire surface of the substrate, and the processing may be performed selectively by operating the nozzle of the nozzle body 705.

  Next, the conductive film 701 is etched using the mask pattern 702 to form gate electrodes and wirings 703 (FIG. 6B). Etching is performed by using a plasma processing apparatus having a film removing unit in which a plurality of plasma injection nozzles are arranged in a uniaxial direction to remove unnecessary portions of the conductive film. A reactive gas such as a fluoride gas or a chloride gas is used for etching the conductive film 701. However, in the nozzle body 705, the reactive gas does not need to be sprayed over the entire surface of the substrate 700, and the mask of the nozzle body 705 is masked. The processing may be performed selectively by operating the nozzles near the region where the pattern is formed.

  FIG. 6C shows a step of removing the mask pattern 702. The mask pattern is removed using a plasma processing apparatus having a film removing unit in which a plurality of plasma injection ports are arranged in a uniaxial direction. Further, when oxygen plasma treatment is performed using a plasma processing apparatus for surface modification using the nozzle body 705, it is not necessary to perform the entire surface of the substrate as described above, and a mask pattern is formed in the nozzle body 705. It is only necessary to selectively perform processing by operating the nozzles in the vicinity of the area being processed.

  Next, a gate insulating film 706 and an island-shaped non-single-crystal semiconductor film 707 are formed (FIG. 7A). These laminates may be formed continuously by preparing a plurality of nozzles for forming the respective coating films, or by sequentially switching the reactive gas each time the nozzle body 705 is scanned. A stacked layer may be formed. When the coating is formed, plasma is generated only in a necessary minimum area instead of the entire substrate 700. For example, in the case of forming an island-shaped semiconductor film, a reactive gas converted into plasma is supplied from the nozzle body 705 only to a region where the semiconductor film is formed to form a film. In the case of forming a silicon oxide film as the semiconductor film, an oxide gas such as a mixed gas of silane and oxygen or TEOS can be used as a reactive gas. The gate insulating film 706 may be formed over the entire surface of the substrate, or may be selectively formed in the vicinity of a region where a TFT is formed.

  Subsequently, the protective film 708 is formed by generating plasma in a necessary region in the same manner as the gate insulating film and the semiconductor film, and a mask pattern 709 for forming a channel protective film is formed thereon (FIG. 7B). )). The mask pattern 709 may be formed using a droplet discharge method as in FIG. 6A, or may be formed using a photolithography method.

Next, the protective film 708 is etched using the mask pattern 709 to form a channel protective film 710 (FIG. 7C). When the channel protective film is formed of a silicon nitride film, a fluoride gas such as SF ₆ may be used. Thereafter, the mask pattern 709 is removed as in the case of FIG.

  Next, in order to form a source region and a drain region of the TFT, a one-conductivity-type non-single-crystal semiconductor film 712 containing an impurity element is formed (FIG. 8A). Typically, an n-type non-single crystal semiconductor film typified by silicon is formed. At this time, the reactive gas supplied from the nozzle body 705 may be obtained by mixing a silicide gas such as silane and a gas containing a periodic group 15 element such as phosphine.

  Thereafter, source and drain wirings 713 and 714 are formed. The source and drain wirings can be formed using a photolithography method or a droplet discharge method. In the case of using a droplet discharge method, a conductive composition containing metal fine particles having a particle diameter of about 1 μm is selectively discharged to directly form source and drain wiring patterns. When the droplet discharge method is used, there is an advantage that a mask necessary for photolithography is not necessary, and a material is minimally required.

  Next, using the formed source and drain wirings 713 and 714 as a mask, the one-conductivity-type non-single-crystal semiconductor film 712 located on the lower layer side is etched (FIG. 8B). Etching is performed by injecting a plasma fluoride gas from the nozzle body 705. In this case as well, the amount of reactive gas to be sprayed is made different in the amount of ejection in the wiring formation region and other regions, and a large amount is ejected in the region where the non-single crystal silicon film is exposed, thereby etching. Can be balanced and the consumption of reactive gas can be suppressed.

  Thereafter, as shown in FIG. 8C, a transparent pixel electrode 720 is formed. The pixel electrode 720 can be directly formed in a predetermined pattern on the substrate by a droplet discharge method using a composition containing conductive particles such as indium tin oxide, tin oxide, and zinc oxide. Thus, by using a composition in which fine particles of indium tin oxide are dispersed in a conductive polymer as the composition of the pixel electrode, the resistance of the contact portion with the non-single crystal semiconductor film 712 of one conductivity type in particular is reduced. Can be lowered.

  Further, in the above manufacturing process, the TFT is formed by the plasma processing apparatus having the nozzle body 705. However, a nozzle body composed of nozzles of different sizes is provided in one plasma processing apparatus, and the nozzles are selectively used depending on the processing application. As a result, a TFT can be formed efficiently. A different structure from the above manufacturing process is shown in FIG.

  For example, in formation of the source region and the drain region, as illustrated in FIG. 8B, a non-single-crystal semiconductor film 712, a protective film 710, and a non-single-crystal semiconductor film 712 of one conductivity type are provided in advance, Etching is performed using the drain wiring 714 as a mask. By using a plasma processing apparatus having a nozzle body 718 composed of finer nozzles as shown in FIG. 9A, the source region and the drain region are separately formed, thereby eliminating the need for a later etching step. In addition, the channel protective film 710 is not necessary, and the process can be greatly simplified.

  Thereafter, as shown in FIG. 9B, a protective film 715 may be formed over the entire surface. In this case, a reactive gas converted into plasma is ejected from the nozzle body 718 to form a film. As the protective film 715, a silicon nitride film is typically used.

  After the protective film 715 is formed, a contact hole is formed in the protective film 715 in order to electrically connect the drain electrode and a pixel electrode to be formed later (FIG. 9C). The contact hole can be formed by using a photolithography method. Here, the reactive gas formed into plasma is selectively ejected from the nozzle body 718 to a place where the contact hole is formed. A contact hole 717 can be formed. At this time, it is desirable to use a plasma processing apparatus having a nozzle corresponding to the diameter of the contact hole. Here, a nozzle body 718 finer than the nozzle body 705 used for forming the semiconductor layer described above was used. By providing nozzle bodies composed of nozzles of different sizes in the same plasma processing apparatus, and using different nozzles depending on the processing application, it is possible to efficiently form TFTs.

  After that, as shown in FIG. 9D, a pixel electrode 720 is formed. The pixel electrode can be directly formed in a predetermined pattern on the substrate by a droplet discharge method using a composition containing conductive particles such as indium tin oxide, tin oxide, and zinc oxide.

  Through the above process, an active matrix display device in which a TFT is provided in each pixel can be formed by using a plasma processing apparatus.

(Embodiment 5)
An example of the plasma processing apparatus used in the above embodiment will be described with reference to FIG.

  3A and 3B are a top view and a cross-sectional view of the device. In the figure, a processing object 303 such as a glass substrate of a desired size or a resin substrate typified by a plastic substrate is set in a cassette chamber 306. As a method for transporting the workpiece 303, horizontal transport may be mentioned, but vertical transport for the purpose of reducing the occupation area of the transport machine or the like may be performed.

  In the transfer chamber 307, the workpiece 303 disposed in the cassette chamber 306 is transferred to the plasma processing chamber 308 by a transfer mechanism (robot arm or the like) 305. The plasma processing chamber 308 adjacent to the transfer chamber 307 is provided with airflow control means 300, rails 304a and 304b for moving the plasma generating means 302 of the present invention, moving means for moving the object to be processed 303, and the like. Further, a known heating means such as a lamp is provided as necessary.

  The airflow control means 300 is intended for dust prevention, and controls the airflow using an inert gas injected from the outlet 301 so as to be blocked from the outside air. The plasma generating means 302 is moved to a predetermined position by a rail 304a arranged in the conveyance direction of the workpiece 303 and a rail 304b arranged in a direction perpendicular to the conveyance direction.

(Embodiment 6)
In this embodiment mode, various electronic devices completed using the present invention will be described. These electronic devices include video cameras, digital cameras, goggles-type displays (head-mounted displays), navigation systems, sound playback devices (car audio, audio components, etc.), notebook-type personal computers, game machines, portable information terminals (mobile computers) A mobile phone, a portable game machine, an electronic book, etc.) and an image playback device provided with a recording medium (specifically, a display capable of playing back a recording medium such as a digital versatile disc (DVD) and displaying the image) Device). Specific examples of these electronic devices are shown in FIG.

  4A illustrates a display device, which includes a housing 4001, a support base 4002, a display portion 4003, a speaker portion 4004, a video input terminal 4005, and the like. The present invention can be used for manufacturing an integrated circuit included in the display portion 4003. Further, the display device shown in FIG. 4A is completed by the present invention. The display device includes all information display devices such as a personal computer, a 20 to 80 inch television broadcast receiver, and an advertisement display.

  FIG. 4B illustrates a digital still camera, which includes a main body 4101, a display portion 4102, an image receiving portion 4103, operation keys 4104, an external connection port 4105, a shutter 4106, and the like. The present invention can be used for manufacturing an integrated circuit included in the display portion 4102. Further, according to the present invention, the digital still camera shown in FIG. 4B is completed.

  FIG. 4C illustrates a laptop personal computer including a main body 4201, a housing 4202, a display portion 4203, a keyboard 4204, an external connection port 4205, a pointing mouse 4206, and the like. The present invention can be used for manufacturing an integrated circuit included in the display portion 4203. The notebook personal computer shown in FIG. 4C is completed by the present invention.

  FIG. 4D illustrates a mobile computer, which includes a main body 4301, a display portion 4302, a switch 4303, operation keys 4304, an infrared port 4305, and the like. The present invention can be used for manufacturing an integrated circuit included in the display portion 4302. Further, according to the present invention, the mobile computer shown in FIG. 4D is completed.

  FIG. 4E shows a portable image reproducing device (specifically, a DVD reproducing device) provided with a recording medium, which includes a main body 4401, a housing 4402, a display portion A4403, a display portion B4404, and a recording medium (DVD or the like). A reading unit 4405, operation keys 4406, a speaker unit 4407, and the like are included. Although the display portion A4403 mainly displays image information and the display portion B4404 mainly displays character information, the present invention can be used for manufacturing an integrated circuit included in the display portions A, B4403 and 4404. Note that an image reproducing device provided with a recording medium includes a home game machine and the like. Further, according to the present invention, the DVD reproducing apparatus shown in FIG.

  FIG. 4F illustrates a goggle type display (head mounted display), which includes a main body 4501, a display portion 4502, and an arm portion 4503. The present invention can be used for manufacturing an integrated circuit included in the display portion 4502. Further, the goggle type display shown in FIG. 4F is completed by the present invention.

  FIG. 4G illustrates a video camera, which includes a main body 4601, a display portion 4602, a housing 4603, an external connection port 4604, a remote control receiving portion 4605, an image receiving portion 4606, a battery 4607, an audio input portion 4608, operation keys 4609, and an eyepiece. Part 4610 and the like. The present invention can be used for manufacturing an integrated circuit included in the display portion 4602. Further, according to the present invention, the video camera shown in FIG. 4G is completed.

  FIG. 4H illustrates a cellular phone, which includes a main body 4701, a housing 4702, a display portion 4703, an audio input portion 4704, an audio output portion 4705, operation keys 4706, an external connection port 4707, an antenna 4708, and the like. The present invention can be used for manufacturing an integrated circuit included in the display portion 4703. Note that the display portion 4703 can suppress current consumption of the mobile phone by displaying white characters on a black background. Further, according to the present invention, the mobile phone shown in FIG. 4H is completed.

  As described above, the applicable range of the present invention is so wide that it can be used for electronic devices in various fields. The electronic device shown here may use any of the semiconductor devices having any structure shown in the present invention.

The figure explaining the plasma processing apparatus of this invention. The figure which represents typically the flow of the process gas of this invention. The figure which shows an example of the atmospheric pressure plasma apparatus used when implementing this invention. FIG. 11 illustrates an example of an electronic device. The figure explaining the plasma generation means of this invention. 10A and 10B illustrate a manufacturing process of a semiconductor device using a plasma processing apparatus of the present invention. 10A and 10B illustrate a manufacturing process of a semiconductor device using a plasma processing apparatus of the present invention. 10A and 10B illustrate a manufacturing process of a semiconductor device using a plasma processing apparatus of the present invention. 10A and 10B illustrate a manufacturing process of a semiconductor device using a plasma processing apparatus of the present invention.

Claims (4)

A plasma processing apparatus having a plurality of plasma generating means,
The plurality of plasma generating means includes a first electrode and a second electrode facing each other,
Means for supplying a gas between the first electrode and the second electrode;
A plasma injection port formed on a side of the first electrode and the second electrode facing the processing substrate and for injecting plasma generated between the first electrode and the second electrode toward the processing substrate; ,
Means for exhausting the gas;
Each comprising
The first electrode is centrally located;
The second electrode has a first cylindrical portion surrounding the first electrode, and a second cylindrical portion surrounding the first cylindrical portion,
The plasma is generated between the first electrode and the first cylindrical portion,
The gas is discharged from between the first cylindrical portion and the second cylindrical portion,
The plasma processing apparatus, wherein each of the plurality of plasma generating means is linearly arranged in one or a plurality of rows. Oite to claim 1,
The plasma processing apparatus, wherein the first electrode and the second electrode are covered with a dielectric. In claim 1 or claim 2 ,
A plasma processing apparatus that performs a film forming process, an etching process, or a surface modification process by applying a pulsed voltage between the first electrode and the second electrode to generate plasma. . In any one of Claim 1 thru | or 3 ,
A plasma processing apparatus comprising means for aligning the plurality of plasma generating means.

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