JP2004311983A - Plasma processing apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To suppress particle generation in generating plasma under atmospheric pressure to solve a problem that the generation of particles by high-density plasma causes such failures as point defects, line defects, or the like in the display part of a display device. <P>SOLUTION: Plasma is generated in a limited area of the necessary minimum for carrying out plasma processing on a substrate to be processed. A plurality of plasma generating means are arranged, each of which generates plasma of a minute size, which is almost the same size as that of the absolute minimum area. The plasma processing is carried out in the limited prescribed area by changing the relative position between each of the plurality of the plasma generating means and the substrate to be processed, thereby suppressing the particle generation to the minimum. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a plasma processing apparatus and a plasma processing method having plasma generating means for producing an active layer and a wiring on a substrate, and more particularly, to a plasma processing apparatus for performing a film forming process, an etching process or a surface modification process. It relates to generating means.

  A thin film transistor (TFT) formed over an insulating substrate is widely applied to an integrated circuit and the like. Above all, a display section of a thin display device represented by a liquid crystal television receiver or the like is often used as a switching element, and its use is expanding to a portable terminal, a large display device, and the like.

  In a display device using a conventional TFT, a film is formed on the entire surface of a substrate, and the TFT is formed using a photolithography process, an etching process, an ashing process, or the like. More than half of such manufacturing processes are often performed in vacuum equipment.

  In recent years, large-sized liquid crystal display devices have attracted attention. However, with this, the area of the mother glass has been increased, and the vacuum device has also been increased in size. This has required a larger-scale capital investment.

  Under such circumstances, as a means for generating plasma, a method of applying an electric field in a pulsed manner is used to maintain glow discharge without shifting to arc discharge even under atmospheric pressure and perform plasma processing. It has become possible in recent years and has attracted attention.

  When plasma is generated under atmospheric pressure, particles are easily generated because high-density plasma is generated. The particles cause a defect such as a point defect or a line defect in the display unit of the display device. The present invention has been made in view of such a situation, and an object of the present invention is to provide a plasma processing apparatus that suppresses generation of particles.

  Plasma is generated only in the minimum necessary region for performing the plasma processing on the processing substrate. The minimum necessary area is an area in which an island-shaped semiconductor area (active layer) or wiring is formed in the entire area of the TFT substrate on which the semiconductor integrated circuit is formed, and the area ratio to the entire area of the substrate is only a few%. ~ Tens of percent. Therefore, the plasma processing apparatus is provided with a plurality of plasma generating means for generating minute plasma only in the minimum necessary area, and the relative position between the plasma generating means and the processing substrate is changed to limit the plasma to a predetermined area. By performing the processing, generation of particles is minimized.

By generating the plasma only in the same region as the island-shaped semiconductor region or the wiring, not only the generation of particles is suppressed, but also the plasma processing can be performed directly in a predetermined region, so that the photolithography process can be performed. It is not necessary, and the process can be shortened.
Also, the size of the electrodes constituting the plasma generating means may not be the same, and may be large and small if necessary.

  A specific configuration of the present invention performs a film forming process, an etching process, or a surface modification process, a plurality of plasma generating means having a plurality of opposed electrodes, and a process gas between the plurality of opposed electrodes. And a gas supply unit for introducing the plurality of plasma generation units, wherein the plurality of plasma generation units are linearly arranged in one row or a plurality of rows.

  A plurality of plasma generating means for performing a film forming process, an etching process, or a surface modification process on a processing substrate, the plurality of plasma generating means having a plurality of opposed electrodes, and a gas for introducing a process gas between the plurality of opposed electrodes; Supply means, the plurality of plasma generation means are linearly arranged in one row or a plurality of rows, and at least one of the plurality of opposed electrodes has a length of a side on the processing substrate side. Is 1 mm or less.

In addition, a plurality of plasma generating means having a plurality of opposed electrodes for performing a film forming process, an etching process, or a surface modification process on a processing substrate, and a process gas is introduced between the plurality of opposed electrodes. A gas supply unit, and a unit for forming a pattern on the processing substrate by the plurality of plasma generation units, wherein the plurality of plasma generation units are linearly arranged in one row or a plurality of rows; At least one of the plurality of opposing electrodes has a side length on the processing substrate side of not more than 10 times, preferably not more than the square of a line width of the pattern, and is a plasma processing apparatus.
In the above structure, the pattern is a wiring, an active layer, a contact hole, or a pattern of a portion where a surface modification process is performed.

  In the above configuration, the plasma generation means has a plurality of minute electrodes, and connects the plurality of electrodes to a pulse power supply and a computer via a control circuit, thereby applying a voltage to be applied to a predetermined electrode at a predetermined timing. It is characterized by having control means. Further, by synchronizing the scanning of the substrate unit on which the processing substrate is fixed or the electrode unit configured by the plurality of plasma generating means with the timing of the voltage applied to the predetermined electrode, a predetermined timing on the processing substrate can be obtained. It is characterized by having means for controlling the generation of plasma of the electrode.

  Further, in the above structure, a means such as a sensor for aligning the processing substrate or the pattern on the processing substrate with one of the plasma generating means is provided.

  As another configuration, the electrodes of the plurality of plasma generating means are formed by processing a conductive material such as an alloy such as stainless steel or brass or copper or aluminum using a focused ion beam device, photolithography, or a laser drawing device. be able to. That is, by performing these processes, a plasma generation processing apparatus having a plasma generation unit in which the shape and size of the electrode are controlled can be used. For example, by using a plasma processing apparatus having a plurality of plasma generating means having different electrode sizes, film formation, etching, or surface modification can be performed under optimal conditions as appropriate.

  As another configuration, the film formation process, the etching process, or the surface modification process is performed by applying a pulsed electric field between the electrodes under an atmospheric pressure or a pressure near the atmospheric pressure.

  The pressure under atmospheric pressure refers to a range of 600 to 106000 Pa, but is not necessarily limited to this value, and includes a low positive pressure state due to a gas flow or the like.

  The term "plasma processing apparatus" used herein refers to all apparatuses using plasma, such as film forming apparatuses such as CVD and sputtering, processing apparatuses such as etching and ashing, and surface processing apparatuses such as cleaning and surface modification. And

  The present invention includes a semiconductor device manufactured using the above-described plasma processing apparatus and a semiconductor manufacturing method. Further, the present invention includes a semiconductor device manufacturing method in which one island-shaped semiconductor layer on a processing substrate is formed by plasma from one plasma generating means, and a semiconductor device manufactured by the method.

  By using a plasma processing apparatus including a plurality of minute plasma generating means, it is possible to generate plasma only in a minimum necessary area in a processing substrate, and to suppress generation of particles generated during plasma processing. be able to. As a result, the performance of a product manufactured by performing plasma processing using the plasma processing apparatus of the present invention is improved, and the yield is improved.

In addition, a plasma treatment can be performed on a predetermined region, and as a result, a photolithography step can be eliminated. As a result, the production time of a product manufactured by performing plasma processing using the plasma processing apparatus of the present invention is reduced, and the number of steps is reduced, so that the production cost is also reduced.

  Embodiments of the present invention will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it is easily understood by those skilled in the art that the form and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention is not construed as being limited to the description of the embodiments below.

(Embodiment 1)
The present invention relates to a method for performing processing by generating plasma only in a region where an active layer on a substrate is formed or a region where a wiring is formed, or a plasma processing apparatus capable of performing the processing. . Hereinafter, a specific description of a plasma processing apparatus having a plurality of minute parallel plate electrodes will be given with reference to FIG.

  A plasma chamber is formed by facing two substrates 102 made of a material such as quartz, ceramic, and resin. On the surface of the substrate 102, a plurality of minute metal electrodes 103 each having a rectangular shape are formed. The length of at least one side of the minute metal electrode having a rectangular shape is desirably 1 mm or less. Therefore, these fine metal electrodes may be finely processed using photolithography, a focused ion beam device, a laser drawing device, or the like.

  Specifically, an electrode can be formed by processing an alloy such as stainless steel or brass, or a conductive material such as copper or aluminum using photolithography, a focused ion beam device, or a laser drawing device. At this time, by controlling the shape and size of the electrode to be processed, it is possible to form a plasma processing apparatus having a plasma generating means suitable for the purpose. For example, when a wiring pattern is formed on a substrate, various types of wiring patterns can be formed at once by performing plasma processing using a plasma processing apparatus including a plasma generating unit including electrodes corresponding to the width of the wiring pattern. Can be simultaneously formed.

  For the metal electrode 103, an alloy such as stainless steel or brass, or a conductive material such as copper or aluminum is used. The plurality of metal electrodes 103 are formed inside one of the opposing substrates, and the opposing side is an integrated electrode. Further, in the present invention, the opposing side of the electrode unit is not limited to an electrode integrated with the substrate, and a plurality of metal electrodes can be formed on the opposing substrates on both sides. It is also desirable to provide a partition so that gas is separately introduced into each electrode.

  Further, it is common practice to cover the electrode surface with a dielectric film. For the dielectric film, zirconium dioxide, titanium dioxide, barium titanate or the like, or a mixture thereof is used. The gap between the opposed electrodes is desirably 1 mm or less, but may be 1 mm or more because it depends on the material of the dielectric material, the thickness of the dielectric film, the applied voltage, and the like. In this case, the outlet of the plasma may be made small by using an insulating resin or the like.

  As described above, one minute metal electrode 103 provided on one of the opposed substrates and one electrode provided on the other of the opposed substrates constitute one minute plasma generating means. One electrode unit is constituted by the plasma generating means. The processing substrate 101 is installed at a position where plasma generated from the electrode unit can sufficiently contact. When there is a concern about plasma damage, it is preferable to use an electrode structure in which plasma does not directly touch the processing substrate, and to blow the process gas onto the processing substrate by optimizing the supply gas pressure.

  Next, the supply of the process gas will be described. A process gas needs to be supplied between the electrode unit and the processing substrate 101, and a gas supply mechanism and an exhaust mechanism are provided. FIG. 2 schematically shows the flow of the process gas supplied by the gas supply mechanism. In FIG. 2A, a structure in which a process gas is blown from the plasma chamber to the processing substrate 101 is employed. FIG. 2B shows a configuration in which a process gas is passed between the electrode unit and the processing substrate 101. Further, when performing the plasma treatment under atmospheric pressure, it is preferable to provide an exhaust mechanism and exhaust the process gas by the method shown in FIGS. 2C and 2D.

As a process gas, for example, SiH ₄ , Si ₂ H ₆ , or a gas diluted with hydrogen, helium, or the like is used when forming a Si film. Reactive gases such as CF ₄ , SF ₆ , Cl ₂ , and O ₂ are used for etching and surface modification.

  A plasma is generated in the plasma chamber by applying a pulsed electric field between the electrodes while the process gas is introduced into the above-described electrode unit. The present invention is not necessarily limited to the atmospheric pressure, and can be implemented in a vacuum atmosphere. In this case, an electric field is applied by a high-frequency power supply. Each minute metal electrode 103 is connected to a pulse power supply 104 and a computer 106 via a control circuit 105, and by applying a pulse-like electric field between predetermined electrodes at a predetermined timing, a predetermined position on the processing substrate is determined. It is possible to generate very small plasma. The control circuit 105 may incorporate a relay circuit as needed. Further, the control circuit itself may be formed on the substrate 102.

  In addition, alignment means for aligning the position of the plasma generating means with the processing substrate and the pattern formed on the processing substrate using the plasma processing apparatus is required. The computer 106 is also connected to the alignment means 107. ing.

  The plasma processing proceeds by moving the processing substrate 101 and the electrode unit in the X and Y directions and changing their relative positions. By using the plasma processing apparatus having the above-described configuration, plasma processing can be performed in a minimum necessary area in a processing substrate, and generation of particles can be suppressed.

(Embodiment 2)
In Embodiment 1, the configuration in which the electrode unit of the plasma processing apparatus has a plurality of metal electrodes and an integrated counter electrode is described. In the present embodiment, FIG. It will be described using FIG.

  FIG. 5A is a perspective view of a plasma generating means 506 having a cylindrical electrode, and FIGS. 5B to 5D are cross-sectional views of the cylindrical electrode.

  In FIG. 5B, a dotted line indicates a path of the process gas 516, reference numerals 501 and 502 denote electrodes made of a conductive metal such as aluminum or copper, and the first electrode 501 is connected to a power source 503. I have. Note that a cooling system for circulating cooling water may be connected to the first electrode 501. When the cooling system is provided, it is possible to prevent the temperature from rising when the surface treatment is continuously performed by circulating the cooling water, and to improve the efficiency by the continuous treatment.

  The second electrode 502 has a shape surrounding the first electrode 501, and is electrically grounded. The first electrode 501 and the second electrode 502 have a cylindrical shape having nozzle-like gas pores at their tips.

  A process gas 516 is supplied to a space between the first electrode 501 and the second electrode 502 from a gas supply mechanism (gas cylinder) 505 via a valve 504. Then, the atmosphere in this space is replaced. When a high-frequency voltage (10 to 500 MHz) is applied to the first electrode 501 by the power supply 503 in this state, plasma is generated in the space.

  When a reactive gas containing chemically active excited species such as ions and radicals generated by the plasma is jetted toward the surface of the object 513, a predetermined surface treatment is performed on the surface of the object 513. It can be performed.

  Note that the process gas filled in the gas supply mechanism (gas cylinder) 505 is appropriately set according to the type of surface treatment performed in the processing chamber. The exhaust gas 507 is introduced into the exhaust mechanism 509 via the valve 508.

  Further, not all of the process gas 516 is consumed in the plasma processing step, and unreacted gas is mixed in the exhaust gas 507. In general, exhaust gas is detoxified by an exhaust gas treatment device and is discarded or collected. By returning unreacted gas components in the exhaust gas as a process gas 516 through a filter 510, the efficiency of use of the process gas is improved. And the amount of exhaust gas emitted can be reduced.

FIGS. 5C and 5D show cylindrical plasma generating means 506 having a cross section different from that of FIG. 5B. In the plasma generation means shown in FIG. 5C, the first electrode 501 is longer than the second electrode 502, and the first electrode 501 has an acute angle. The plasma generation means shown in (1) has a shape for injecting a reactive gas containing a chemically active excited species generated between the first electrode 501 and the second electrode 502 to the outside. In the present embodiment, the cylindrical plasma generating means has been described as an example. However, the present invention is not limited to the cylindrical shape, and any shape of plasma generating means may be used.
FIG. 5E shows a case where a plurality of plasma injection ports of the plasma generation means are arranged in a uniaxial direction.

  The distance between the tip of the plasma generating means and the surface of the object to be treated must be kept at 3 mm or less, preferably 1 mm or less, more preferably 0.5 mm or less. For this purpose, the distance between the plasma generating means and the surface of the workpiece may be kept constant by using, for example, a distance sensor.

  The present invention using a plasma processing apparatus that can operate under atmospheric pressure does not require the time for evacuation or opening to the atmosphere required for a decompression device, and does not require a complicated vacuum system. In particular, when a large substrate is used, the chamber is inevitably increased in size, and processing time is required to reduce the pressure in the chamber. However, since the present plasma processing apparatus can be used under atmospheric pressure, manufacturing It is effective in terms of cost reduction.

(Embodiment 3)
In this embodiment, when a semiconductor device is manufactured using a light-transmitting substrate as a processing substrate, the substrate size is 600 mm × 720 mm, 680 mm × 880 mm, 1000 mm × 1200 mm, 1100 mm × 1250 mm, 1150 mm × 1300 mm, A large-area substrate such as 1500 mm × 1800 mm, 1800 mm × 2000 mm, 2000 mm × 2100 mm, 2200 mm × 2600 mm, or 2600 mm × 3100 mm is used.

  By using such a large substrate, manufacturing cost can be reduced. As a substrate that can be used, a glass substrate such as barium borosilicate glass or aluminoborosilicate glass typified by Corning # 7059 glass or # 1737 glass can be used. Further, as other substrates, various light-transmitting substrates such as quartz, semiconductor, plastic, plastic film, metal, glass epoxy resin, and ceramic can be used.

(Embodiment 4)
In this embodiment, a method for manufacturing a semiconductor device using the plasma treatment apparatus described in Embodiments 1 and 2 will be described with reference to FIGS. Note that the display device exemplified here is an active matrix display device in which a TFT is provided for each pixel.

  FIG. 6A illustrates a step of forming a conductive film to be a gate electrode and a wiring. First, a substrate 700 on which a TFT and a light emitting element are formed is prepared. Specifically, as the substrate 700, a glass substrate such as barium borosilicate glass or aluminoborosilicate glass, a quartz substrate, a ceramic substrate, or the like can be used. Alternatively, a metal substrate or a semiconductor substrate on which an insulating film is formed may be used. A substrate made of a synthetic resin having flexibility such as plastic generally has a lower heat-resistant temperature than the above-described substrate, but any substrate can be used as long as it can withstand the processing temperature in the manufacturing process. . The surface of the substrate 700 may be polished and flattened using a technique such as a CMP method.

  Next, a conductive film 701 to be a gate electrode and a wiring is formed over the surface of the substrate 700 by a sputtering method, a CVD method, or a droplet discharging method. Specifically, a conductive material such as a metal such as aluminum, titanium, tantalum, molybdenum, silver, gold, or copper, or a metal compound is used for the conductive film. Here, the droplet discharging method means a method of discharging a droplet containing a predetermined composition from a fine hole to form a predetermined pattern, and includes an ink jet method and the like in its category. By using the droplet discharging method, various wirings such as signal lines and scanning lines, gate electrodes of TFTs, electrodes of light-emitting elements, and the like can be formed without using a mask for exposure. In the case of using a droplet discharge method, a conductive film does not need to be formed over the entire substrate, and may be selectively formed near a region where a gate electrode and a wiring are formed.

  After that, a mask pattern 702 for forming a gate electrode and a wiring is formed over the conductive film 701. The mask pattern 702 can be formed by selectively discharging a composition by a droplet discharging method. Alternatively, a resist may be applied to the entire surface of the substrate, and a mask pattern may be selectively formed by a photolithography method. At this time, an unnecessary portion of the resist can be etched by the plasma processing apparatus. In the case of using a plasma processing apparatus, it is not necessary to perform etching on the entire surface of the substrate, and the processing may be performed selectively by operating the nozzles of the nozzle body 705.

  Next, the conductive film 701 is etched using the mask pattern 702 to form a gate electrode and a wiring 703 (FIG. 6B). In the etching, unnecessary portions of the conductive film are removed by using a plasma processing apparatus having a film removing means in which a plurality of plasma injection ports are arranged in a uniaxial direction. A reactive gas such as a fluoride gas or a chloride gas is used for etching the conductive film 701. However, in the nozzle body 705, it is not necessary to spray the reactive gas over the entire surface of the substrate 700, and The processing may be selectively performed by operating the nozzles near the area where the pattern is formed.

  FIG. 6C shows a step of removing the mask pattern 702. The mask pattern is removed using a plasma processing apparatus having a film removing means in which a plurality of plasma injection ports are arranged in a uniaxial direction. When oxygen plasma processing is performed using a plasma processing apparatus for surface modification using the nozzle body 705, it is not necessary to perform oxygen plasma processing on the entire surface of the substrate as in the case described above. The processing may be selectively performed by operating the nozzles near the specified area.

  Next, a gate insulating film 706 and an island-shaped non-single-crystal semiconductor film 707 are formed (FIG. 7A). In forming these laminates, a plurality of nozzles for forming respective coatings may be prepared and formed continuously, or the reactive gas may be sequentially switched by switching the nozzle body 705 once. It may be formed by lamination. When forming a film, plasma is generated not in the entire substrate 700 but in a necessary minimum area. For example, when an island-shaped semiconductor film is formed, a reactive gas that is turned into plasma from the nozzle body 705 is supplied only to a region where the semiconductor film is to be formed to form a film. When a silicon oxide film is formed as the semiconductor film, an oxide gas such as a mixed gas of silane and oxygen or TEOS can be used as a reactive gas. The gate insulating film 706 may be formed over the entire surface of the substrate or may be selectively formed near a region where a TFT is formed.

  Subsequently, the protective film 708 is also formed by generating plasma in a necessary region similarly to the gate insulating film and the semiconductor film, and a mask pattern 709 for forming a channel protective film is formed thereon (FIG. 7B )). The mask pattern 709 may be formed by a droplet discharge method or by a photolithography method as in FIG.

Next, the protective film 708 is etched using the mask pattern 709 to form a channel protective film 710 (FIG. 7C). In the case where the channel protective film is formed using a silicon nitride film, a fluoride gas such as SF ₆ may be used. After that, the mask pattern 709 is removed as in the case of FIG.

  Next, a one-conductivity non-single-crystal semiconductor film 712 containing an impurity element is formed in order to form a source region and a drain region of the TFT (FIG. 8A). Typically, an n-type non-single-crystal semiconductor film typified by silicon is formed. In this case, the reactive gas supplied from the nozzle body 705 may be a mixture of a silicide gas such as silane and a gas containing a Group 15 element such as phosphine.

  After that, source and drain wirings 713 and 714 are formed. The source and drain wirings can be formed by a photolithography method or a droplet discharging method. In the case of using the droplet discharging method, a conductive composition containing metal fine particles having a particle diameter of about 1 μm is selectively discharged to directly form a wiring pattern of source and drain wirings. When the droplet discharging method is used, there is an advantage that a mask required for photolithography is not required, and that a material can be minimized.

  Next, using the formed source and drain wirings 713 and 714 as a mask, the one-conductivity-type non-single-crystal semiconductor film 712 located thereunder is etched (FIG. 8B). The etching is performed by injecting plasma fluoride gas from the nozzle body 705. In this case as well, the amount of the reactive gas to be blown is different between the wiring formation region and the other region, and a large amount is sprayed in the region where the non-single-crystal silicon film is exposed, thereby performing etching. And the consumption of the reactive gas can be suppressed.

  After that, as shown in FIG. 8C, a transparent pixel electrode 720 is formed. The pixel electrode 720 can be formed in a predetermined pattern directly on a substrate by a droplet discharging method using a composition containing powder of conductive particles such as indium tin oxide, tin oxide, and zinc oxide. In this manner, by using a composition in which fine particles of indium tin oxide are dispersed in a conductive polymer as the composition of the pixel electrode, resistance of a contact portion with the one-conductivity type non-single-crystal semiconductor film 712 can be particularly reduced. Can be lower.

  Further, in the above manufacturing process, the TFT was formed by the plasma processing apparatus having the nozzle body 705. However, a nozzle body composed of nozzles having different sizes is provided in one plasma processing apparatus, and the nozzle is selectively used depending on the processing application. Thereby, a TFT can be efficiently formed. FIG. 9 shows a structure different from the above manufacturing process.

  For example, in the formation of the source region and the drain region, as shown in FIG. 8B, a non-single-crystal semiconductor film 712, a protective film 710, and a one-conductivity-type non-single-crystal semiconductor film 712 are provided in advance. It is formed by etching using the drain wiring 714 as a mask. By using a plasma processing apparatus having a nozzle body 718 composed of finer nozzles as shown in FIG. 9A to separately form a source region and a drain region, a subsequent etching step becomes unnecessary. In addition, since the channel protective film 710 is not required, the process can be greatly simplified.

  After that, as shown in FIG. 9B, a protective film 715 may be formed over the entire surface. In this case, a reactive gas converted into plasma is injected from the nozzle body 718 to form a film. As the protective film 715, a silicon nitride film is typically used.

  After forming the protective film 715, a contact hole is formed in the protective film 715 to electrically connect the drain electrode and a pixel electrode to be formed later (FIG. 9C). The contact hole can be formed by using a photolithography method. Here, a reactive gas that has been turned into plasma from a nozzle body 718 is selectively ejected to a position where a contact hole is to be formed, so that the contact hole can be formed without using a mask. The formation of the contact hole 717 can be performed. At this time, it is desirable to use a plasma processing apparatus having a nozzle corresponding to the diameter of the contact hole. Here, a nozzle body 718 finer than the nozzle body 705 used for forming the above semiconductor layer was used. By providing a nozzle body composed of nozzles having different sizes in the same plasma processing apparatus and using the nozzles properly depending on the processing application, it becomes possible to efficiently form a TFT.

  After that, as shown in FIG. 9D, a pixel electrode 720 is formed. The pixel electrode can be formed in a predetermined pattern directly on the substrate by a droplet discharging method using a composition containing powder of conductive particles such as indium tin oxide, tin oxide, and zinc oxide.

  Through the above steps, an active matrix display device in which a TFT is provided for each pixel can be formed by using a plasma processing apparatus.

(Embodiment 5)
An example of a plasma processing apparatus used in the above embodiment will be described with reference to FIG.

  3A and 3B are a top view and a cross-sectional view of the device. In the drawing, an object 303 such as a glass substrate or a resin substrate represented by a plastic substrate having a desired size is set in a cassette chamber 306. As a method of transporting the workpiece 303, horizontal transport may be mentioned, but vertical transport for the purpose of reducing the occupied area of the transporter may be performed.

  In the transfer chamber 307, the workpiece 303 arranged in the cassette chamber 306 is transferred to the plasma processing chamber 308 by a transfer mechanism (a robot arm or the like) 305. The plasma processing chamber 308 adjacent to the transfer chamber 307 is provided with an airflow control unit 300, rails 304 a and 304 b for moving the plasma generating unit 302 of the present invention, a moving unit for moving the workpiece 303, and the like. In addition, a known heating means such as a lamp is provided as necessary.

  The airflow control means 300 is intended for dust prevention, and controls the airflow using an inert gas injected from the outlet 301 so as to be cut off from the outside air. The plasma generating means 302 is moved to a predetermined position by a rail 304a arranged in the direction of transport of the workpiece 303 and a rail 304b arranged in a direction perpendicular to the direction of transport.

(Embodiment 6)
In this embodiment, various electronic devices completed using the present invention will be described. These electronic devices include a video camera, a digital camera, a goggle-type display (head-mounted display), a navigation system, a sound reproducing device (car audio, an audio component, etc.), a notebook personal computer, a game device, and a portable information terminal (mobile computer). An image reproducing apparatus equipped with a recording medium (specifically, a mobile phone, a portable game machine or an electronic book), and a display capable of reproducing a recording medium such as a Digital Versatile Disc (DVD) and displaying the image. Device). FIG. 4 shows specific examples of these electronic devices.

  FIG. 4A illustrates a display device, which includes a housing 4001, a support 4002, a display portion 4003, a speaker portion 4004, a video input terminal 4005, and the like. The present invention can be used for manufacturing an integrated circuit included in the display portion 4003. According to the present invention, the display device shown in FIG. 4A is completed. The display device includes all information display devices for personal computers, for receiving 20-80 inch television broadcasts, for displaying advertisements, and the like.

  FIG. 4B illustrates a digital still camera, which includes a main body 4101, a display portion 4102, an image receiving portion 4103, operation keys 4104, an external connection port 4105, a shutter 4106, and the like. The invention can be used for manufacturing an integrated circuit included in the display portion 4102. According to the present invention, the digital still camera shown in FIG. 4B is completed.

  FIG. 4C illustrates a laptop personal computer, which includes a main body 4201, a housing 4202, a display portion 4203, a keyboard 4204, an external connection port 4205, a pointing mouse 4206, and the like. The present invention can be used for manufacturing an integrated circuit included in the display portion 4203. Further, according to the present invention, the notebook personal computer shown in FIG. 4C is completed.

  FIG. 4D illustrates a mobile computer, which includes a main body 4301, a display portion 4302, a switch 4303, operation keys 4304, an infrared port 4305, and the like. The present invention can be used for manufacturing an integrated circuit included in the display portion 4302. According to the present invention, the mobile computer shown in FIG. 4D is completed.

  FIG. 4E illustrates a portable image reproducing device (specifically, a DVD reproducing device) provided with a recording medium, which includes a main body 4401, a housing 4402, a display portion A4403, a display portion B4404, and a recording medium (DVD or the like). A reading unit 4405, operation keys 4406, a speaker unit 4407, and the like are included. The display portion A4403 mainly displays image information and the display portion B4404 mainly displays character information. The present invention can be used for manufacturing an integrated circuit included in the display portions A, B4403, and 4404. Note that the image reproducing device provided with the recording medium includes a home game machine and the like. According to the present invention, the DVD reproducing device shown in FIG. 4E is completed.

  FIG. 4F illustrates a goggle type display (head-mounted display), which includes a main body 4501, a display portion 4502, and an arm portion 4503. The present invention can be used for manufacturing an integrated circuit included in the display portion 4502. Further, according to the present invention, the goggle type display shown in FIG. 4 (F) is completed.

  FIG. 4G illustrates a video camera, which includes a main body 4601, a display portion 4602, a housing 4603, an external connection port 4604, a remote control receiving portion 4605, an image receiving portion 4606, a battery 4607, a voice input portion 4608, operation keys 4609, and an eyepiece. Section 4610 and the like. The present invention can be used for manufacturing an integrated circuit included in the display portion 4602. Further, according to the present invention, the video camera shown in FIG.

  FIG. 4H illustrates a mobile phone, which includes a main body 4701, a housing 4702, a display portion 4703, a sound input portion 4704, a sound output portion 4705, operation keys 4706, an external connection port 4707, an antenna 4708, and the like. The invention can be used for manufacturing an integrated circuit included in the display portion 4703. Note that the display portion 4703 can reduce current consumption of the mobile phone by displaying white characters on a black background. According to the present invention, the mobile phone shown in FIG. 4H is completed.

  As described above, the applicable range of the present invention is extremely wide, and the present invention can be used for electronic devices in all fields. Further, the electronic device shown here may use a semiconductor device having any configuration shown in the present invention.

FIG. 2 illustrates a plasma processing apparatus of the present invention. The figure which represents typically the flow of the process gas of this invention. FIG. 1 is a diagram showing an example of an atmospheric pressure plasma device used in carrying out the present invention. FIG. 13 illustrates an example of an electronic device. FIG. 2 is a diagram illustrating a plasma generation unit of the present invention. FIG. 4 illustrates a manufacturing process of a semiconductor device using the plasma processing apparatus of the present invention. FIG. 4 illustrates a manufacturing process of a semiconductor device using the plasma processing apparatus of the present invention. FIG. 4 illustrates a manufacturing process of a semiconductor device using the plasma processing apparatus of the present invention. FIG. 4 illustrates a manufacturing process of a semiconductor device using the plasma processing apparatus of the present invention.

Claims (9)

A film forming process, an etching process or a surface modification process, a plurality of plasma generating means having a plurality of opposed electrodes, and a gas supply means for introducing a process gas between the plurality of opposed electrodes,
The plasma processing apparatus, wherein the plurality of plasma generating units are linearly arranged in one or a plurality of rows. Performing a film forming process, an etching process, or a surface modification process on a processing substrate, a plurality of plasma generating units having a plurality of opposed electrodes, and a gas supply unit for introducing a process gas between the plurality of opposed electrodes; Has,
The plurality of plasma generating means are linearly arranged in one row or a plurality of rows,
At least one of the plurality of opposed electrodes has a side closest to the processing substrate side with a length of 1 mm or less. A plurality of plasma generating means for performing a film forming process, an etching process, or a surface modification process on a processing substrate and having a plurality of opposed electrodes; and a gas supply means for introducing a process gas between the plurality of opposed electrodes And means for forming a pattern on the processing substrate by the plurality of plasma generating means,
The plurality of plasma generating means are linearly arranged in one row or a plurality of rows,
A plasma processing apparatus, wherein at least one of the plurality of opposed electrodes has a side closest to the processing substrate side having a length of 10 times or less a line width of the pattern. In claim 3,
The said pattern is a pattern of a wiring, an active layer, a contact hole, or a surface modification processing part, The plasma processing apparatus characterized by the above-mentioned. In any one of claims 2 to 4,
A plasma processing apparatus, comprising: means for aligning the processing substrate with one of the plurality of plasma generating means. In any one of claims 1 to 5,
Means for controlling a voltage applied to a predetermined electrode via a control circuit,
Means for controlling the generation of plasma on the processing substrate by synchronizing the scanning of the substrate stage or the plurality of plasma generating means with the timing of the voltage applied to the predetermined electrode. Plasma processing equipment. In any one of claims 1 to 6,
The plasma processing apparatus, wherein the plurality of opposed electrodes are processed using a focused ion beam device, photolithography, or a laser drawing device. In any one of claims 1 to 7,
The plasma processing apparatus, wherein the plurality of opposed electrodes are covered with a dielectric. In any one of claims 1 to 8,
The plasma processing apparatus, wherein the film forming process, the etching process, or the surface modifying process is performed by applying a pulsed electric field between the plurality of opposed electrodes under atmospheric pressure or a pressure near atmospheric pressure. .

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