JP4767862B2 - エッチングの終了を検出するための方法および装置 - Google Patents
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- 238000000034 method Methods 0.000 title claims description 149
- 238000005530 etching Methods 0.000 title claims description 36
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- 230000008569 process Effects 0.000 claims description 94
- 238000001020 plasma etching Methods 0.000 claims description 40
- 238000012544 monitoring process Methods 0.000 claims description 29
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/66—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light electrically excited, e.g. electroluminescence
- G01N21/68—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light electrically excited, e.g. electroluminescence using high frequency electric fields
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
- G01J3/0205—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows
- G01J3/0229—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows using masks, aperture plates, spatial light modulators or spatial filters, e.g. reflective filters
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/30—Measuring the intensity of spectral lines directly on the spectrum itself
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/443—Emission spectrometry
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
- H01J37/32963—End-point detection
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Description
Claims (18)
- プラズマ光学発光を監視するための方法であって、
複数の可動の閉じ込めリングの間に定められたアパチャを通して、プラズマからの光学発光のデータを収集することと、
特定の時間に前記複数の可動の閉じ込めリングを保持する工程であって、該保持は、前記アパチャを一定の構成に維持することと、
前記複数の可動の閉じ込めリングを保持しつつ、プラズマ光学発光における特定の摂動を検出することと、を含み、
前記複数の可動の閉じ込めリングは、プラズマエッチングチャンバ内に配置され、前記アパチャの構成を変動させることができ、
前記光学発光のデータは、窓を通して収集される、
方法。 - 請求項1に記載の、プラズマ光学発光を監視するための方法において、
前記窓は、前記閉じ込めリングの外側に設けられ、前記アパチャを通して光学発光のデータを収集するように方向付けられる、方法。 - 請求項1に記載の、プラズマ光学発光を監視するための方法において、
前記アパチャの構成は、前記複数の可動の閉じ込めリングの間に存在する一つまたはそれ以上の間隙の、光学発光収集点に対する大きさおよび位置によって定められる、方法。 - 請求項1に記載の、プラズマ光学発光を監視するための方法において、
前記特定の時間は、予想されるプラズマエッチングプロセスの終了より前の、予め指定された期間に対応する、方法。 - 請求項4に記載の、プラズマ光学発光を監視するための方法において、
前記予め指定された期間は、予測されるエッチングプロセス継続時間の1%から50%に及ぶ範囲内である、方法。 - 請求項1に記載の、プラズマ光学発光を監視するための方法において、
前記プラズマ光学発光における特定の摂動を検出することは、前記プラズマ光学発光の波長を監視することを含み、該波長は、前記プラズマのうち、プラズマエッチングプロセスの状況を表す構成材料に関連している、方法。 - 請求項1に記載の、プラズマ光学発光を監視するための方法は、さらに、
前記プラズマ光学発光内の前記特定の摂動を検出した後、ある期間に渡って前記複数の可動の閉じ込めリングを保持しつづけることを含む方法。 - 請求項7に記載の、プラズマ光学発光を監視するための方法において、
前記期間は、エッチングプロセスの継続時間の1%から50%に及ぶ範囲内である、方法。 - プラズマエッチングプロセスの終了を検出するための方法であって、
可動の閉じ込めリングを有するチャンバ内でプラズマエッチングプロセスを実施することと、
予想される前記プラズマエッチングプロセスの終了時間より前の、予め指定された時間に到達することと、
前記予想される前記プラズマエッチングプロセスの終了時間より前の、前記予め指定された時間に到達するとすぐに、前記可動の閉じ込めリングを定位置に保持することと、
前記可動の閉じ込めリング間の間隙を通して窓からプラズマ光学発光を監視することと、
該監視は、前記可動の閉じ込めリングを前記窓に対して定位置に保持した状態で実施されることと、
前記プラズマ光学発光における摂動を検出することと、
前記摂動は、前記プラズマエッチングプロセスの終了を示唆していることと、
を含む方法。 - 請求項9に記載の、プラズマエッチングプロセスの終了を検出するための方法において、
前記予め指定された時間は、予測される前記プラズマエッチングプロセスの継続時間の1%から50%に及ぶ範囲内である、方法。 - 請求項9に記載の、プラズマエッチングプロセスの終了を検出するための方法において、
前記可動の閉じ込めリング間の間隙は、前記プラズマ光学発光を監視するためのアパチャを定めている、方法。 - 請求項9に記載の、プラズマエッチングプロセスの終了を検出するための方法において、
前記プラズマ光学発光を監視することは、前記可動の閉じ込めリングの外側に設けられた窓を使用して実施される、方法。 - 請求項9に記載の、プラズマエッチングプロセスの終了を検出するための方法において、
前記プラズマ光学発光における摂動を検出することは、更に、前記プラズマ光学発光の波長を監視することを含み、前記波長は、前記プラズマのうち、プラズマエッチングプロセスの状況を表す構成材料に関連している、方法。 - 請求項9に記載の、プラズマエッチングプロセスの終了を検出するための方法は、さらに、
前記プラズマ光学発光における前記摂動を検出した後、ある期間に渡って前記可動の閉じ込めリングを定位置に保持しつづけることを含み、前記ある期間は、前記プラズマエッチングプロセスの継続時間の1%から50%に及ぶ範囲内である、方法。 - エッチングプロセスを実施するためのプラズマを提供するためのチャンバであって、
前記チャンバ内で基板を保持するためのチャックと、
前記エッチングプロセスを実施する際に前記プラズマを監視するための、前記チャンバ内の窓と、
前記チャックを取り囲む複数の閉じ込めリングと、
前記複数の閉じ込めリングを移動させるためのプログラム可能な期間を設定することができる閉じ込めリング移動コントローラであって、前記窓を通して終了条件のための監視を行う際に、プログラムされている期間に渡って前記複数の閉じ込めリングを保持することができる、閉じ込めリング移動コントローラと、を備え、
前記窓は、前記複数の閉じ込めリング間の間隙と前記窓と、を通した前記プラズマの視界を提供するために、前記複数の閉じ込めリングの周縁の外側に設けられている
チャンバ。 - 請求項15に記載の、エッチングプロセスを実施するためのプラズマを提供するためのチャンバにおいて、
前記窓は、プラズマ光学発光データを収集して光伝送コンポーネントに提供するように構成される、チャンバ。 - 請求項15に記載の、エッチングプロセスを実施するためのプラズマを提供するためのチャンバにおいて、
前記終了条件のための監視を行う際の前記プログラム可能な期間は、予想される終了時間より前の、ある期間によって定められ、前記ある期間は、予測される前記エッチングプロセスの継続時間の1%から50%までの間である、チャンバ。 - 請求項15に記載の、エッチングプロセスを実施するためのプラズマを提供するためのチャンバにおいて、
前記複数の閉じ込めリングの保持は、前記複数の閉じ込めリング間の間隙を、前記窓に対して一定の状態に維持することを含む、チャンバ。
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US10/696,628 | 2003-10-28 | ||
US10/696,628 US7053994B2 (en) | 2003-10-28 | 2003-10-28 | Method and apparatus for etch endpoint detection |
PCT/US2004/034840 WO2005045890A2 (en) | 2003-10-28 | 2004-10-20 | Method and apparatus for etch endpoint detection |
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JP2007525019A JP2007525019A (ja) | 2007-08-30 |
JP2007525019A5 JP2007525019A5 (ja) | 2007-10-11 |
JP4767862B2 true JP4767862B2 (ja) | 2011-09-07 |
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US (1) | US7053994B2 (ja) |
EP (1) | EP1678480A4 (ja) |
JP (1) | JP4767862B2 (ja) |
KR (1) | KR101134330B1 (ja) |
CN (1) | CN1898547B (ja) |
IL (1) | IL175202A0 (ja) |
TW (1) | TWI248644B (ja) |
WO (1) | WO2005045890A2 (ja) |
Families Citing this family (114)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7364623B2 (en) * | 2005-01-27 | 2008-04-29 | Lam Research Corporation | Confinement ring drive |
EP1995899B1 (en) * | 2006-03-06 | 2015-07-22 | Huawei Technologies Co., Ltd. | Report information generation device, communication device, report information generation method, and program |
KR20100065321A (ko) * | 2007-08-07 | 2010-06-16 | 피포탈 시스템즈 코포레이션 | 가스의 화학적 조성을 확인하는 방법 및 장치 |
CN102661791B (zh) * | 2008-04-03 | 2015-02-11 | 朗姆研究公司 | 用于归一化光学发射光谱的方法和装置 |
US8257503B2 (en) * | 2008-05-02 | 2012-09-04 | Lam Research Corporation | Method and apparatus for detecting plasma unconfinement |
US9997325B2 (en) * | 2008-07-17 | 2018-06-12 | Verity Instruments, Inc. | Electron beam exciter for use in chemical analysis in processing systems |
CN102082090B (zh) * | 2009-12-01 | 2012-11-21 | 无锡华润上华半导体有限公司 | 自对准硅化物膜的蚀刻方法 |
US9324576B2 (en) | 2010-05-27 | 2016-04-26 | Applied Materials, Inc. | Selective etch for silicon films |
CN102142384B (zh) | 2010-12-02 | 2013-01-09 | 深圳市华星光电技术有限公司 | 金属蚀刻终点侦测方法及金属蚀刻终点侦测机 |
US10283321B2 (en) | 2011-01-18 | 2019-05-07 | Applied Materials, Inc. | Semiconductor processing system and methods using capacitively coupled plasma |
US9064815B2 (en) | 2011-03-14 | 2015-06-23 | Applied Materials, Inc. | Methods for etch of metal and metal-oxide films |
US8999856B2 (en) | 2011-03-14 | 2015-04-07 | Applied Materials, Inc. | Methods for etch of sin films |
US9267739B2 (en) | 2012-07-18 | 2016-02-23 | Applied Materials, Inc. | Pedestal with multi-zone temperature control and multiple purge capabilities |
US9373517B2 (en) | 2012-08-02 | 2016-06-21 | Applied Materials, Inc. | Semiconductor processing with DC assisted RF power for improved control |
US9132436B2 (en) | 2012-09-21 | 2015-09-15 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
US10256079B2 (en) | 2013-02-08 | 2019-04-09 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
US9362130B2 (en) | 2013-03-01 | 2016-06-07 | Applied Materials, Inc. | Enhanced etching processes using remote plasma sources |
US9040422B2 (en) | 2013-03-05 | 2015-05-26 | Applied Materials, Inc. | Selective titanium nitride removal |
US20140271097A1 (en) | 2013-03-15 | 2014-09-18 | Applied Materials, Inc. | Processing systems and methods for halide scavenging |
JP6186152B2 (ja) * | 2013-03-29 | 2017-08-23 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
US9493879B2 (en) | 2013-07-12 | 2016-11-15 | Applied Materials, Inc. | Selective sputtering for pattern transfer |
US9773648B2 (en) | 2013-08-30 | 2017-09-26 | Applied Materials, Inc. | Dual discharge modes operation for remote plasma |
US9576809B2 (en) | 2013-11-04 | 2017-02-21 | Applied Materials, Inc. | Etch suppression with germanium |
US9520303B2 (en) | 2013-11-12 | 2016-12-13 | Applied Materials, Inc. | Aluminum selective etch |
US9245762B2 (en) | 2013-12-02 | 2016-01-26 | Applied Materials, Inc. | Procedure for etch rate consistency |
US9499898B2 (en) | 2014-03-03 | 2016-11-22 | Applied Materials, Inc. | Layered thin film heater and method of fabrication |
US9299537B2 (en) | 2014-03-20 | 2016-03-29 | Applied Materials, Inc. | Radial waveguide systems and methods for post-match control of microwaves |
US9903020B2 (en) | 2014-03-31 | 2018-02-27 | Applied Materials, Inc. | Generation of compact alumina passivation layers on aluminum plasma equipment components |
US9309598B2 (en) | 2014-05-28 | 2016-04-12 | Applied Materials, Inc. | Oxide and metal removal |
US9496167B2 (en) | 2014-07-31 | 2016-11-15 | Applied Materials, Inc. | Integrated bit-line airgap formation and gate stack post clean |
US9659753B2 (en) | 2014-08-07 | 2017-05-23 | Applied Materials, Inc. | Grooved insulator to reduce leakage current |
US9553102B2 (en) | 2014-08-19 | 2017-01-24 | Applied Materials, Inc. | Tungsten separation |
CN105405735B (zh) * | 2014-08-22 | 2017-07-25 | 中微半导体设备(上海)有限公司 | 等离子体处理装置及等离子体处理工艺的监测方法 |
US9355862B2 (en) | 2014-09-24 | 2016-05-31 | Applied Materials, Inc. | Fluorine-based hardmask removal |
US9613822B2 (en) | 2014-09-25 | 2017-04-04 | Applied Materials, Inc. | Oxide etch selectivity enhancement |
US9966240B2 (en) * | 2014-10-14 | 2018-05-08 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
US9355922B2 (en) | 2014-10-14 | 2016-05-31 | Applied Materials, Inc. | Systems and methods for internal surface conditioning in plasma processing equipment |
US11637002B2 (en) | 2014-11-26 | 2023-04-25 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
US10224210B2 (en) | 2014-12-09 | 2019-03-05 | Applied Materials, Inc. | Plasma processing system with direct outlet toroidal plasma source |
US10573496B2 (en) | 2014-12-09 | 2020-02-25 | Applied Materials, Inc. | Direct outlet toroidal plasma source |
US9502258B2 (en) | 2014-12-23 | 2016-11-22 | Applied Materials, Inc. | Anisotropic gap etch |
US11257693B2 (en) | 2015-01-09 | 2022-02-22 | Applied Materials, Inc. | Methods and systems to improve pedestal temperature control |
KR101600520B1 (ko) * | 2015-01-28 | 2016-03-08 | 연세대학교 산학협력단 | 광학 분광 분석 장치 |
US20160225652A1 (en) | 2015-02-03 | 2016-08-04 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
US9728437B2 (en) | 2015-02-03 | 2017-08-08 | Applied Materials, Inc. | High temperature chuck for plasma processing systems |
US9881805B2 (en) | 2015-03-02 | 2018-01-30 | Applied Materials, Inc. | Silicon selective removal |
US9691645B2 (en) | 2015-08-06 | 2017-06-27 | Applied Materials, Inc. | Bolted wafer chuck thermal management systems and methods for wafer processing systems |
US9741593B2 (en) | 2015-08-06 | 2017-08-22 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
US9349605B1 (en) | 2015-08-07 | 2016-05-24 | Applied Materials, Inc. | Oxide etch selectivity systems and methods |
US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
US10522429B2 (en) * | 2015-11-30 | 2019-12-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing semiconductor device |
US10522371B2 (en) | 2016-05-19 | 2019-12-31 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US10504754B2 (en) | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US9865484B1 (en) | 2016-06-29 | 2018-01-09 | Applied Materials, Inc. | Selective etch using material modification and RF pulsing |
GB201611652D0 (en) * | 2016-07-04 | 2016-08-17 | Spts Technologies Ltd | Method of detecting a condition |
US10062575B2 (en) | 2016-09-09 | 2018-08-28 | Applied Materials, Inc. | Poly directional etch by oxidation |
US10629473B2 (en) | 2016-09-09 | 2020-04-21 | Applied Materials, Inc. | Footing removal for nitride spacer |
US10062585B2 (en) | 2016-10-04 | 2018-08-28 | Applied Materials, Inc. | Oxygen compatible plasma source |
US9721789B1 (en) | 2016-10-04 | 2017-08-01 | Applied Materials, Inc. | Saving ion-damaged spacers |
US9934942B1 (en) | 2016-10-04 | 2018-04-03 | Applied Materials, Inc. | Chamber with flow-through source |
US10546729B2 (en) | 2016-10-04 | 2020-01-28 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
US10062579B2 (en) | 2016-10-07 | 2018-08-28 | Applied Materials, Inc. | Selective SiN lateral recess |
US9947549B1 (en) | 2016-10-10 | 2018-04-17 | Applied Materials, Inc. | Cobalt-containing material removal |
US10163696B2 (en) | 2016-11-11 | 2018-12-25 | Applied Materials, Inc. | Selective cobalt removal for bottom up gapfill |
US9768034B1 (en) | 2016-11-11 | 2017-09-19 | Applied Materials, Inc. | Removal methods for high aspect ratio structures |
US10242908B2 (en) | 2016-11-14 | 2019-03-26 | Applied Materials, Inc. | Airgap formation with damage-free copper |
US10026621B2 (en) | 2016-11-14 | 2018-07-17 | Applied Materials, Inc. | SiN spacer profile patterning |
US10566206B2 (en) | 2016-12-27 | 2020-02-18 | Applied Materials, Inc. | Systems and methods for anisotropic material breakthrough |
US10403507B2 (en) | 2017-02-03 | 2019-09-03 | Applied Materials, Inc. | Shaped etch profile with oxidation |
US10431429B2 (en) | 2017-02-03 | 2019-10-01 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
US10043684B1 (en) | 2017-02-06 | 2018-08-07 | Applied Materials, Inc. | Self-limiting atomic thermal etching systems and methods |
US10319739B2 (en) | 2017-02-08 | 2019-06-11 | Applied Materials, Inc. | Accommodating imperfectly aligned memory holes |
US10943834B2 (en) | 2017-03-13 | 2021-03-09 | Applied Materials, Inc. | Replacement contact process |
US10319649B2 (en) * | 2017-04-11 | 2019-06-11 | Applied Materials, Inc. | Optical emission spectroscopy (OES) for remote plasma monitoring |
US11276590B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
US11276559B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
US10497579B2 (en) | 2017-05-31 | 2019-12-03 | Applied Materials, Inc. | Water-free etching methods |
US10049891B1 (en) | 2017-05-31 | 2018-08-14 | Applied Materials, Inc. | Selective in situ cobalt residue removal |
US10920320B2 (en) | 2017-06-16 | 2021-02-16 | Applied Materials, Inc. | Plasma health determination in semiconductor substrate processing reactors |
US10541246B2 (en) | 2017-06-26 | 2020-01-21 | Applied Materials, Inc. | 3D flash memory cells which discourage cross-cell electrical tunneling |
US10727080B2 (en) | 2017-07-07 | 2020-07-28 | Applied Materials, Inc. | Tantalum-containing material removal |
US10541184B2 (en) | 2017-07-11 | 2020-01-21 | Applied Materials, Inc. | Optical emission spectroscopic techniques for monitoring etching |
US10354889B2 (en) | 2017-07-17 | 2019-07-16 | Applied Materials, Inc. | Non-halogen etching of silicon-containing materials |
US10170336B1 (en) | 2017-08-04 | 2019-01-01 | Applied Materials, Inc. | Methods for anisotropic control of selective silicon removal |
US10043674B1 (en) | 2017-08-04 | 2018-08-07 | Applied Materials, Inc. | Germanium etching systems and methods |
US10297458B2 (en) | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
US10128086B1 (en) | 2017-10-24 | 2018-11-13 | Applied Materials, Inc. | Silicon pretreatment for nitride removal |
US10283324B1 (en) | 2017-10-24 | 2019-05-07 | Applied Materials, Inc. | Oxygen treatment for nitride etching |
US10256112B1 (en) | 2017-12-08 | 2019-04-09 | Applied Materials, Inc. | Selective tungsten removal |
US10903054B2 (en) | 2017-12-19 | 2021-01-26 | Applied Materials, Inc. | Multi-zone gas distribution systems and methods |
US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
US10854426B2 (en) | 2018-01-08 | 2020-12-01 | Applied Materials, Inc. | Metal recess for semiconductor structures |
US10679870B2 (en) | 2018-02-15 | 2020-06-09 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus |
US10964512B2 (en) | 2018-02-15 | 2021-03-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus and methods |
TWI716818B (zh) | 2018-02-28 | 2021-01-21 | 美商應用材料股份有限公司 | 形成氣隙的系統及方法 |
US10593560B2 (en) | 2018-03-01 | 2020-03-17 | Applied Materials, Inc. | Magnetic induction plasma source for semiconductor processes and equipment |
US10319600B1 (en) | 2018-03-12 | 2019-06-11 | Applied Materials, Inc. | Thermal silicon etch |
US10497573B2 (en) | 2018-03-13 | 2019-12-03 | Applied Materials, Inc. | Selective atomic layer etching of semiconductor materials |
US10573527B2 (en) | 2018-04-06 | 2020-02-25 | Applied Materials, Inc. | Gas-phase selective etching systems and methods |
US10490406B2 (en) | 2018-04-10 | 2019-11-26 | Appled Materials, Inc. | Systems and methods for material breakthrough |
US10699879B2 (en) | 2018-04-17 | 2020-06-30 | Applied Materials, Inc. | Two piece electrode assembly with gap for plasma control |
US10886137B2 (en) | 2018-04-30 | 2021-01-05 | Applied Materials, Inc. | Selective nitride removal |
US10755941B2 (en) | 2018-07-06 | 2020-08-25 | Applied Materials, Inc. | Self-limiting selective etching systems and methods |
US10872778B2 (en) | 2018-07-06 | 2020-12-22 | Applied Materials, Inc. | Systems and methods utilizing solid-phase etchants |
US10672642B2 (en) | 2018-07-24 | 2020-06-02 | Applied Materials, Inc. | Systems and methods for pedestal configuration |
US10892198B2 (en) | 2018-09-14 | 2021-01-12 | Applied Materials, Inc. | Systems and methods for improved performance in semiconductor processing |
US11049755B2 (en) | 2018-09-14 | 2021-06-29 | Applied Materials, Inc. | Semiconductor substrate supports with embedded RF shield |
US11062887B2 (en) | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
US11417534B2 (en) | 2018-09-21 | 2022-08-16 | Applied Materials, Inc. | Selective material removal |
US11682560B2 (en) | 2018-10-11 | 2023-06-20 | Applied Materials, Inc. | Systems and methods for hafnium-containing film removal |
US11121002B2 (en) | 2018-10-24 | 2021-09-14 | Applied Materials, Inc. | Systems and methods for etching metals and metal derivatives |
US11437242B2 (en) | 2018-11-27 | 2022-09-06 | Applied Materials, Inc. | Selective removal of silicon-containing materials |
US11721527B2 (en) | 2019-01-07 | 2023-08-08 | Applied Materials, Inc. | Processing chamber mixing systems |
US10920319B2 (en) | 2019-01-11 | 2021-02-16 | Applied Materials, Inc. | Ceramic showerheads with conductive electrodes |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0896988A (ja) * | 1994-09-28 | 1996-04-12 | Sony Corp | プラズマモニタ装置およびプラズマモニタ方法 |
JPH0927396A (ja) * | 1995-07-10 | 1997-01-28 | Lam Res Corp | プラズマ閉じ込めを使用するプラズマエッチング装置 |
JP2000030896A (ja) * | 1998-07-10 | 2000-01-28 | Anelva Corp | プラズマ閉込め装置 |
JP2004511096A (ja) * | 2000-10-04 | 2004-04-08 | ラム リサーチ コーポレーション | プラズマ閉じ込めのためのウエハ領域圧力制御 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19725520A1 (de) * | 1996-07-01 | 1998-01-08 | Emtec Magnetics Gmbh | Verfahren und Anordnung zur laser-induzierten Spektralanalyse |
US6362110B1 (en) * | 2000-03-30 | 2002-03-26 | Lam Research Corporation | Enhanced resist strip in a dielectric etcher using downstream plasma |
TW544791B (en) * | 2000-11-28 | 2003-08-01 | Tokyo Electron Ltd | Apparatus for 2-D spatially resolved optical emission and absorption spectroscopy |
US6677604B2 (en) * | 2001-03-30 | 2004-01-13 | Tokyo Electron Limited | Optical system and method for plasma optical emission analysis |
US6716300B2 (en) * | 2001-11-29 | 2004-04-06 | Hitachi, Ltd. | Emission spectroscopic processing apparatus |
TWI240601B (en) * | 2002-11-26 | 2005-09-21 | Tokyo Electron Ltd | Plasma processing system and method |
US6975393B2 (en) * | 2003-03-11 | 2005-12-13 | Verity Instruments, Inc. | Method and apparatus for implementing an afterglow emission spectroscopy monitor |
-
2003
- 2003-10-28 US US10/696,628 patent/US7053994B2/en not_active Expired - Lifetime
-
2004
- 2004-10-20 WO PCT/US2004/034840 patent/WO2005045890A2/en active Application Filing
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-
2006
- 2006-04-25 IL IL175202A patent/IL175202A0/en not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0896988A (ja) * | 1994-09-28 | 1996-04-12 | Sony Corp | プラズマモニタ装置およびプラズマモニタ方法 |
JPH0927396A (ja) * | 1995-07-10 | 1997-01-28 | Lam Res Corp | プラズマ閉じ込めを使用するプラズマエッチング装置 |
JP2000030896A (ja) * | 1998-07-10 | 2000-01-28 | Anelva Corp | プラズマ閉込め装置 |
JP2004511096A (ja) * | 2000-10-04 | 2004-04-08 | ラム リサーチ コーポレーション | プラズマ閉じ込めのためのウエハ領域圧力制御 |
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CN1898547B (zh) | 2010-12-01 |
JP2007525019A (ja) | 2007-08-30 |
WO2005045890A2 (en) | 2005-05-19 |
CN1898547A (zh) | 2007-01-17 |
KR20060112652A (ko) | 2006-11-01 |
US20060087644A1 (en) | 2006-04-27 |
KR101134330B1 (ko) | 2012-04-09 |
TWI248644B (en) | 2006-02-01 |
TW200525632A (en) | 2005-08-01 |
US7053994B2 (en) | 2006-05-30 |
IL175202A0 (en) | 2006-09-05 |
EP1678480A4 (en) | 2012-10-17 |
WO2005045890A3 (en) | 2005-11-24 |
EP1678480A2 (en) | 2006-07-12 |
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