JP4760818B2 - Electro-optical substrate, and electro-optical device and electronic apparatus including the same - Google Patents

Description

  The present invention relates to, for example, an active matrix driving type liquid crystal device, an electrophoretic device such as electronic paper, an electro-optical substrate used in an EL (Electro-Luminescence) display device, an electro-optical device including the electro-optical device, and a liquid crystal projector, for example The present invention belongs to the technical field of electronic equipment having the electro-optical device as a light valve.

  In an active matrix driving type electro-optical device, for example, when incident light is applied to a channel region of a thin film transistor (hereinafter referred to as “TFT”) for pixel switching provided in each pixel, A light leakage current is generated by excitation, and the characteristics of the TFT change. In particular, in the case of an electro-optical device for a projector light valve, since the intensity of incident light is high, it is important to shield incident light from the TFT channel region and its peripheral region.

  Therefore, conventionally, this is caused by a light-shielding film that defines the opening area of each pixel provided on the counter substrate, or by a data line that passes over the TFT on the TFT array substrate and is made of a metal film such as Al (aluminum). The channel region and its peripheral region are shielded from light. For example, there is a technique in which a data line is formed of a metal and is projected along a scanning line to prevent light from entering a TFT positioned below the data line (see, for example, Patent Document 1).

  Furthermore, a light shielding film made of, for example, a refractory metal may be provided at a position facing the lower side of the TFT on the TFT array substrate. If a light-shielding film is also provided on the lower side of the TFT in this way, the back-surface reflected light from the TFT array substrate side or a combination of a plurality of electro-optical devices via a prism or the like may be used. Return light such as projection light that penetrates the prism or the like from the electro-optical device can be prevented from entering the TFT of the electro-optical device.

JP 2001-330861 A

  However, the various light shielding techniques described above have the following problems.

  That is, first, according to the technique of forming a light shielding film on the counter substrate or the electro-optical substrate, the space between the light shielding film and the channel portion is viewed in a three-dimensional manner, for example, via a liquid crystal layer, an electrode, an interlayer insulating film, or the like. The light is obliquely separated from each other, and the light is not sufficiently shielded. In particular, in a small electro-optical device used as a light valve of a projector, incident light is a light beam obtained by converging light from a light source with a lens, so that an obliquely incident component cannot be ignored (for example, perpendicular to a substrate). In other words, it is a practical problem that the light is not sufficiently shielded against such oblique incident light.

  Further, generally, a light-transmitting doped silicon is used for a scanning line including a TFT gate electrode. Since such silicon has a higher refractive index than the surrounding oxide film, light incident on the scanning line obliquely from the upper side or the lower side is captured by the silicon as if it passes through the optical fiber. In addition, it is propagated as stray light without repeating the total reflection and greatly reducing the amount of light. Here, there is a high possibility that the propagated stray light reaches the vicinity of the channel portion arranged to face the gate electrode in the TFT. Then, there is a problem that stray light that comes near the gate electrode exits from the silicon and is incident on the TFT channel portion side in accordance with the change in the shape of the scanning line near the TFT.

  The present invention has been made in view of the above-described problems, and has an excellent light shielding property due to a structure that blocks stray light propagating in a scanning line, and an electro-optic substrate that enables bright and high-quality image display, and It is an object to provide an electro-optical device and an electronic apparatus including the above.

In order to achieve the above object, the present invention provides a pixel electrode, a thin film transistor provided corresponding to the pixel electrode, an interlayer insulating film covering the thin film transistor, and the substrate of the interlayer insulating film on the substrate. A scanning line provided on the opposite side; and contact holes formed on both sides of the semiconductor layer of the thin film transistor in plan view in the interlayer insulating film, the scanning line passing through the contact hole The thin film transistor is electrically connected to a gate electrode of the thin film transistor and is not provided in a region overlapping at least the channel region of the thin film transistor facing the gate electrode .
According to this aspect, since the scanning line is not provided immediately above the channel region, a step corresponding to the thickness of the scanning line can be reduced in the region, and the contact hole allows the scanning line to pass through the scanning line. This can prevent a situation in which light leakage current is generated in the thin film transistor due to the propagated light and the transistor characteristics are changed.
A first light-shielding film provided between the semiconductor layer of the thin film transistor and the substrate; and a second light-shielding film provided on an interlayer insulating film that covers the scanning line. The light shielding film is provided so as to cover the channel region of the thin film transistor from above and below, respectively.
Further, the second light shielding film is formed of a capacitor line formed so as to overlap the scanning line.
Further, a data line is provided above the channel region.
According to this aspect, light incident on the channel region from above can be prevented by the data line.

The first electro-optical substrate of the present invention is used in an electro-optical device such as a liquid crystal device as a light valve of a projector, for example. During the operation, an image signal is supplied to the source region via the data line while supplying a scanning signal to the gate electrode via the scanning line for the thin film transistor. Accordingly, the pixel electrode connected to the drain region can be controlled by the thin film transistor in accordance with the image signal, and a display operation by active matrix driving can be performed. Here, in particular, constituting the gate electrode, for example, a gate electrode made of a polysilicon film or the like, for example, a scanning line made of a polysilicon film, is another layer. Therefore, when the scanning line is made of a light-transmitting material such as light-transmitting doped polysilicon, light incident on the scanning line obliquely from above or below is captured by the silicon or the like. Even if it is transmitted as stray light as it goes through the optical fiber, it is not transmitted as it is to the gate electrode. Therefore, the possibility that the light propagated by the scanning line reaches the vicinity of the channel portion arranged to face the gate electrode is reduced.

  As a result, it is possible to effectively prevent a situation in which the light leakage current is generated in the thin film transistor due to the light propagating through the scanning line as in the background art described above and the transistor characteristics are changed. Thereby, high-quality image display is possible. Further, according to such an improvement in the light shielding performance, it becomes possible to use stronger incident light, and a bright image display is possible.

  Further, the scan line includes a refractory metal film.

  According to this aspect, the scanning line has a high melting point including, for example, Ti (titanium), Cr (chromium), W (tungsten), Ta (tantalum), Mo (molybdenum), or an alloy thereof, silicide, nitride, and the like. It is comprised from the 2nd conductive layer containing a metal. Therefore, light incident on the scanning line obliquely from above or below is not propagated as stray light so as to be captured by the scanning line and go through the optical fiber. As a result, it is possible to effectively prevent the light leakage current from being generated in the thin film transistor.

  In addition, the scan line includes a silicon compound.
  The scanning line is made of polysilicon.

  According to this aspect, the scanning line is composed of the second conductive layer including a refractory metal such as Ti, Cr, W, Ta, and Mo and a silicon compound such as silicide thereof. Therefore, light incident on the scanning line obliquely from above or below is not propagated as stray light so as to be captured by the scanning line and go through the optical fiber. As a result, it is possible to effectively prevent the light leakage current from being generated in the thin film transistor.

  The scan line has a multilayer structure including a metal film, a conductive film, and a semiconductor film.

  According to this aspect, the scanning line includes, for example, a metal film such as Al (aluminum), Au (gold), Cu (copper), a refractory metal, an alloy, a conductor film such as a polysilicon film, and a polysilicon film. A second conductive layer having a multilayer structure including a semiconductor film. Therefore, light that is incident on the scanning line obliquely from above or below is hardly propagated as stray light so as to be captured by the scanning line and go through the optical fiber. As a result, it is possible to effectively prevent the light leakage current from being generated in the thin film transistor.

  According to this aspect, the scanning line made of the second conductive layer and the gate electrode made of the first conductive layer are electrically connected through the contact hole filled with the light-shielding conductive material. Therefore, even if the light incident on the scanning line obliquely from above or obliquely below is captured by the scanning line and propagated as stray light through the optical fiber, it propagates to the gate electrode through the contact hole. Will never be done.

  Note that either the first conductive layer or the second conductive layer may be above or below. For example, the scanning line made of the second conductive layer may be arranged so as to pass through the lower side of the thin film transistor, or may be arranged so as to pass through the upper side.

  In another aspect of the first electro-optic substrate of the present invention, a relay layer made of a light-shielding conductive material that relay-connects the first conductive layer and the second conductive layer is further provided.

  According to this aspect, the scanning line made of the second conductive layer and the gate electrode made of the first conductive layer are electrically connected by the relay layer made of a light-shielding conductive material. Therefore, even if light incident on the scanning line from obliquely above or obliquely below is captured by the scanning line and propagated as stray light through the optical fiber, it propagates to the gate electrode via the relay layer. Will never be done.

  Note that either the first conductive layer or the second conductive layer may be above or below. For example, the scanning line made of the second conductive layer may be arranged so as to pass through the lower side of the thin film transistor, or may be arranged so as to pass through the upper side.

  In another aspect of the first electro-optic substrate of the present invention, the second conductive layer is overlaid on the first conductive layer.

  According to this aspect, the presence of the scanning line made of the second conductive layer overlaid on the first conductive layer can shield the gate electrode made of the first conductive layer or the thin film transistor disposed opposite thereto from above. In particular, if the second conductive film is formed of a light-shielding conductive material and thereby covers the gate electrode from above without any gap, the light-shielding performance for the gate electrode or thin film transistor can be improved.

  The second conductive layer may be stacked on the first conductive layer with an interlayer insulating film interposed therebetween.

  In this aspect, the second conductive layer may be configured to be directly overlaid on the first conductive layer.

  If comprised in this way, the electrical connection between a scanning line and a gate electrode can be obtained comparatively easily by the contact between both. In addition, since it is possible to shield light from above by the scanning line at a position close to the gate electrode, it is possible to further improve the light shielding performance for incident light from obliquely above.

  Alternatively, in another aspect of the first electro-optical substrate of the present invention, the scanning line is not provided at least above the channel region of the semiconductor layer of the thin film transistor, and between the thin film transistors adjacent to each other in plan view. Exists.

  According to this aspect, since the scanning line exists between adjacent thin film transistors along the edge of each pixel electrode, the surface step at the gate electrode portion of the thin film transistor can be reduced by adjusting the thickness of the scanning line. . As a result, planarization of the surface of the uppermost layer of the substrate in the vicinity of the region where the thin film transistor is present can be promoted. Therefore, it is possible to reduce the malfunction of the electro-optical material such as the alignment failure of the liquid crystal due to the unevenness of the uppermost layer surface.

  In this aspect, the data line may be provided above the channel region.

  If comprised in this way, it can prevent that the convex level | step difference of the board | substrate uppermost layer surface becomes large because a scanning line and a data line cross | intersect.

  In order to solve the above problems, a second electro-optical substrate of the present invention has a pixel electrode, a thin film transistor that controls the switching of the pixel electrode, a scanning line that supplies a scanning signal to the gate electrode of the thin film transistor, A data line for supplying an image signal to the source region of the thin film transistor is provided. The gate electrode and the scanning line are made of the same layer, and a conductive light-shielding portion is interposed therebetween.

  The second electro-optical substrate of the present invention is used in an electro-optical device such as a liquid crystal device as a light valve of a projector, for example. During the operation, an image signal is supplied to the source region via the data line while supplying a scanning signal to the gate electrode via the scanning line for the thin film transistor. Accordingly, the pixel electrode connected to the drain region can be controlled by the thin film transistor in accordance with the image signal, and a display operation by active matrix driving can be performed. Here, in particular, the first conductive layer constituting the gate electrode and the second conductive layer constituting the scanning line are the same layer, and a conductive light-shielding portion is interposed therebetween. Therefore, when both are made of a light-transmitting material such as light-transmitting doped polysilicon, the light incident on the scanning line obliquely from above or obliquely below is captured by the silicon or the like, and the optical fiber. Even if it is propagated as stray light so as to go through, it is hardly transmitted to the gate electrode because it is blocked by the light shielding portion. Therefore, the possibility that the light propagated by the scanning line reaches the vicinity of the channel portion arranged to face the gate electrode is reduced.

  As a result, it is possible to effectively prevent a situation in which the light leakage current is generated in the thin film transistor due to the light propagating through the scanning line as in the background art described above and the transistor characteristics are changed. Thereby, high-quality image display is possible. Further, according to such an improvement in the light shielding performance, it becomes possible to use stronger incident light, and a bright image display is possible.

  In one aspect of the second electro-optic substrate of the present invention, the light shielding portion is disposed above or below the gate electrode and the scanning line via an interlayer insulating film, and a first contact hole is formed at one end thereof. And is connected to the scanning line via a second contact hole at the other end.

  According to this aspect, the gate electrode and the scanning line are connected by the light shielding portion via the first and second contact holes opened in the interlayer insulating film. Therefore, when the scanning line is made of, for example, a light-transmitting material, even if light incident from above or below the scanning line is caught and propagated by the scanning line, it is transmitted to the gate electrode. There is little to be done.

  Note that the light shielding portion may be above or below the same layer. For example, the light shielding portion may be disposed on the lower side of the thin film transistor or may be disposed on the upper side.

  Alternatively, in another aspect of the second electro-optical substrate of the present invention, the light shielding portion is formed by silicidizing the same layer.

  According to this aspect, a light-shielding portion in which the same layer is silicided exists between the scanning line and the gate electrode made of the same layer. Therefore, when the scanning line is made of, for example, a light-transmitting material, even if light incident on the scanning line obliquely from above or obliquely below is captured and propagated by the scanning line, it is silicidized. Therefore, the light is not transmitted to the gate electrode.

  Note that such silicidation can be performed relatively easily by performing a heat treatment by disposing a metal in a region to be the light-shielding portion in the same layer forming the scanning line and the gate electrode in the manufacturing process.

  In order to solve the above-described problems, an electro-optical device of the present invention includes the above-described electro-optical substrate of the present invention (including various aspects thereof), a counter substrate disposed to face the electro-optical substrate, and the counter substrate. And an electro-optic material layer sandwiched between the electro-optic substrates.

  According to the electro-optical device of the present invention, an electro-optical material layer made of, for example, liquid crystal is driven by a pixel electrode provided on an electro-optical substrate, so that an image can be displayed according to an image signal. At this time, since the first or second electro-optical substrate of the present invention described above is provided, light leakage current is generated in the thin film transistor due to light propagating through the scanning line, and transistor characteristics are improved. The situation to change can be prevented effectively. Thereby, high-quality image display is possible. Further, according to such an improvement in the light shielding performance, it becomes possible to use stronger incident light, and a bright image display is possible.

  In order to solve the above problems, an electronic apparatus according to the present invention includes the above-described electro-optical device according to the present invention.

  According to the electronic apparatus of the present invention, the projector, the liquid crystal television, the mobile phone, the electronic notebook, the word processor, the viewfinder type or the monitor, which is particularly bright and excellent in display quality, is provided with the above-described electro-optical device of the present invention. Various electronic devices such as a direct-view video tape recorder, a workstation, a videophone, a POS terminal, and a touch panel can be realized.

  Such an operation and other advantages of the present invention will become apparent from the embodiments described below.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In each of the following embodiments, the electro-optical device of the invention is applied to a liquid crystal device.

(First embodiment)
First, an electro-optical device according to a first embodiment of the invention will be described with reference to FIGS. FIG. 1 is an equivalent circuit of various elements, wirings, and the like in a plurality of pixels formed in a matrix that forms an image display region of the electro-optical device. FIG. 2 is a plan view of a plurality of adjacent pixel groups on the TFT array substrate on which data lines, scanning lines, pixel electrodes and the like are formed. 3 is a cross-sectional view taken along line AA ′ of FIG. 2, FIG. 4 is a cross-sectional view taken along line BB ′ of FIG. 2, and FIG. 5 is a cross-sectional view taken along line BB ′ of the comparative example. In FIGS. 3 to 5, the scales of the layers and the members are different from each other in order to make the layers and the members large enough to be recognized on the drawings.

  In FIG. 1, a pixel electrode 9 a and a TFT 30 for switching control of the pixel electrode 9 a are formed in each of a plurality of pixels formed in a matrix that forms the image display region 10 a of the electro-optical device according to the present embodiment. The data line 6 a to which the image signal is supplied is electrically connected to the source of the TFT 30. The image signals S1, S2,..., Sn written to the data lines 6a may be supplied line-sequentially in this order, or may be supplied for each group to a plurality of adjacent data lines 6a. good. Further, the scanning line 3a is electrically connected to the gate of the TFT 30, and the scanning signals G1, G2,..., Gm are applied to the scanning line 3a in a pulse-sequential manner in this order at a predetermined timing. It is configured. The pixel electrode 9a is electrically connected to the drain of the TFT 30, and the image signal S1, S2,..., Sn supplied from the data line 6a is obtained by closing the switch of the TFT 30 as a switching element for a certain period. Write at a predetermined timing. Image signals S1, S2,..., Sn written in a liquid crystal as an example of an electro-optical material via the pixel electrode 9a are held for a certain period with a counter electrode formed on a counter substrate described later. The The liquid crystal modulates light by changing the orientation and order of the molecular assembly according to the applied voltage level, thereby enabling gradation display. In the normally white mode, the transmittance for incident light is reduced according to the voltage applied in units of each pixel, and in the normally black mode, the light is incident according to the voltage applied in units of each pixel. The light transmittance is increased, and light having a contrast corresponding to the image signal is emitted from the electro-optical device as a whole. Here, in order to prevent the held image signal from leaking, a storage capacitor 70 is added in parallel with the liquid crystal capacitor formed between the pixel electrode 9a and the counter electrode.

  The fixed potential side capacitor electrode of the storage capacitor 70 is formed of a part of the capacitor line 300 for supplying a fixed potential. The capacitor line 300 is formed to extend in the horizontal direction along the scanning line 3a.

  In FIG. 2, a plurality of transparent pixel electrodes 9a (outlined by dotted line portions 9a ′) are provided in a matrix on the TFT array substrate of the electro-optical device. A data line 6a and a scanning line 3a are provided along each boundary. A TFT 30 is provided at each intersection of the scanning line 3a and the data line 6a.

  As shown in FIGS. 2 to 4, in this embodiment, in particular, on the TFT array substrate 10 which is an example of the electro-optic substrate of the present invention, in the semiconductor layer 1 a of the TFT 30, a hatched region rising to the right in FIG. An island-shaped gate electrode 3g is formed so as to face the channel region 1a ′. The scanning line 3a is directly arranged on the upper side of the gate electrode 3g, and the scanning line 3a is formed wide at this portion.

  The configuration and effect relating to the light shielding of the scanning line 3a and the gate electrode 3g formed of a layer different from the scanning line 3a will be described in detail later with reference to FIGS.

  As shown in FIGS. 2 to 4, the storage capacitor 70 includes a high-concentration drain region 1e of the TFT 30 and a relay layer 71 serving as a pixel potential side capacitor electrode connected to the pixel electrode 9a, and a capacitor serving as a fixed potential side capacitor electrode. A part of the line 300 is formed so as to be opposed to each other through the dielectric film 75.

  The capacitor line 300 is made of a conductive light shielding film containing, for example, a metal or an alloy, constitutes an example of the upper light shielding film, and also functions as a fixed potential side capacitive electrode. The capacitor line 300 is made of, for example, a single metal, an alloy, a metal silicide, a polysilicide, or a laminate of these including at least one of high melting point metals such as Ti, Cr, W, Ta, and Mo. Alternatively, the capacitor line 300 may include other metals such as Al (aluminum) and Ag (silver). However, the capacitor line 300 may have a multilayer structure in which a first film made of, for example, a conductive polysilicon film and a second film made of a metal silicide film containing a refractory metal or the like are stacked.

  The relay layer 71 is made of, for example, a conductive polysilicon film and functions as a pixel potential side capacitor electrode. The relay layer 71 has a function as a pixel potential side capacitor electrode and a function as another example of the light absorption layer or the upper light shielding film disposed between the capacitor line 300 as the upper light shielding film and the TFT 30. In addition, the pixel electrode 9a and the high concentration drain region 1e of the TFT 30 have a function of relay connection. However, the relay layer 71 may also be composed of a single layer film or a multilayer film containing a metal or an alloy, like the capacitor line 300.

  The capacitor line 300 extends in a stripe shape along the scanning line 3a as viewed in a plan view, and a portion overlapping the TFT 30 protrudes up and down in FIG. The data lines 6a extending in the vertical direction in FIG. 2 and the capacitor lines 300 extending in the horizontal direction in FIG. A lattice-like upper light-shielding film (built-in light-shielding film) is formed, and defines an opening area of each pixel.

  As shown in FIGS. 2 to 4, the lower light-shielding film 11 a is provided in a lattice pattern below the TFT 30 on the TFT array substrate 10.

  The lower light-shielding film 11a includes at least one of refractory metals such as Ti, Cr, W, Ta, and Mo, for example, like the capacitor line 300 that constitutes an example of the upper light-shielding film as described above. It consists of a single metal, an alloy, a metal silicide, a polysilicide, or a laminate of these. Alternatively, the lower light shielding film 11a may include other metals such as Al and Ag.

  Further, the capacitor line 300 extends from the image display region where the pixel electrode 9a is disposed to the periphery thereof, and is electrically connected to a constant potential source to be a fixed potential. As such a constant potential source, a later-described scanning line driving circuit for supplying a scanning signal for driving the TFT 30 to the scanning line 3a and a later-described data line driving for controlling a sampling circuit for supplying an image signal to the data line 6a. A constant potential source such as a positive power source or a negative power source supplied to the circuit may be used, or a constant potential supplied to the counter electrode 21 of the counter substrate 20 may be used. Further, the lower light-shielding film 11a also extends from the image display region to the periphery thereof and is connected to a constant potential source, similarly to the capacitor line 300, in order to avoid the potential fluctuation from adversely affecting the TFT 30. Good.

  3 and 4, the TFT array substrate 10 includes a transparent second transparent substrate 202 made of a quartz plate, a glass plate or the like as the substrate body. A pixel electrode 9a is provided in the vicinity of the surface of the TFT array substrate 10 facing the liquid crystal layer 50, and an alignment film 16 subjected to a predetermined alignment process such as a rubbing process is provided above the pixel electrode 9a. ing. The pixel electrode 9a is made of a transparent conductive film such as an ITO (Indium Tin Oxide) film. The alignment film 16 is made of an organic film such as a polyimide film.

  On the other hand, the counter substrate 20 includes a transparent first transparent substrate 201 made of a quartz plate, a glass plate or the like as the substrate body. A counter electrode 21 is formed near the surface of the first transparent substrate 201 on the side facing the liquid crystal layer 50. Further, an alignment film 22 subjected to a predetermined alignment process such as a rubbing process is provided on the uppermost layer portion. The counter electrode 21 is made of a transparent conductive film such as an ITO film. The alignment film 22 is made of an organic film such as a polyimide film.

  The counter substrate 20 may be provided with a lattice-shaped or striped light-shielding film. By adopting such a configuration, the incident light from the counter substrate 20 side is allowed to enter the channel region 1a ′ and the light shielding film on the counter substrate 20 together with the capacitor line 300 and the data line 6a constituting the upper light shield film as described above. Intrusion into the low concentration source region 1b and the low concentration drain region 1c can be more reliably prevented.

  Between the TFT array substrate 10 and the counter substrate 20, which are arranged in such a manner so that the pixel electrode 9 a and the counter electrode 21 face each other, an electro-optical material is placed in a space surrounded by a seal material described later. A liquid crystal layer 50 is formed by encapsulating liquid crystal as an example. The liquid crystal layer 50 takes a predetermined alignment state by the alignment films 16 and 22 in a state where an electric field from the pixel electrode 9a is not applied. The liquid crystal layer 50 is made of, for example, a liquid crystal in which one kind or several kinds of nematic liquid crystals are mixed. The sealing material is an adhesive made of, for example, a photo-curing resin or a thermosetting resin for bonding the TFT array substrate 10 and the counter substrate 20 around them, and the distance between the two substrates is set to a predetermined value. Gap materials such as glass fibers or glass beads are mixed.

  Further, a base insulating film 12 is provided under the pixel switching TFT 30. The base insulating film 12 is formed on the entire surface of the TFT array substrate 10 in addition to the function of interlayer insulating the TFT 30 from the lower light-shielding film 11a, and thus remains rough after polishing the surface of the TFT array substrate 10 and after cleaning. It has a function of preventing deterioration of the characteristics of the pixel switching TFT 30 due to dirt or the like.

  In FIG. 3, the pixel switching TFT 30 has an LDD (Lightly Doped Drain) structure, and a channel region 1a ′ of the semiconductor layer 1a in which a channel is formed by an electric field from the gate electrode 3g, the gate electrode 3g and the semiconductor layer. An insulating film 2 including a gate insulating film that insulates 1a, a low concentration source region 1b and a low concentration drain region 1c of the semiconductor layer 1a, a high concentration source region 1d and a high concentration drain region 1e of the semiconductor layer 1a are provided.

  On the scanning line 3a, a first interlayer insulating film 41 is formed in which a contact hole 81 leading to the high concentration source region 1d and a contact hole 83 leading to the high concentration drain region 1e are respectively opened. A relay layer 71 and a capacitor line 300 are formed on the first interlayer insulating film 41, and a second interlayer insulating film 42 in which contact holes 81 and 85 are respectively formed is formed thereon. . A data line 6 a is formed on the second interlayer insulating film 42, and a third interlayer insulating film 43 in which a contact hole 85 leading to the relay layer 71 is formed is formed thereon. The pixel electrode 9a is provided on the upper surface of the third interlayer insulating film 43 thus configured.

  Next, with reference to FIGS. 4 to 5, the configuration and the operation and effect related to the light shielding of the scanning line 3a and the gate electrode 3g made of a layer different from the scanning line 3a in the electro-optical device described above will be described in detail. To do.

  As shown in FIG. 4, in the present embodiment, in particular, the first conductive layer that constitutes the gate electrode 3g and the second conductive layer that constitutes the scanning line 3a are separate layers. The two are in ohmic contact with each other at the contact portion 360, and the scanning line 3a is electrically connected to the gate electrode 3g in an excellent manner. The first conductive layer constituting the gate electrode 3g is made of, for example, a polysilicon film. Thereby, the gate electrode 3g can function well as a gate electrode of a TFT disposed so as to face the semiconductor layer 1a made of a polysilicon film or the like via the insulating film 2.

  On the other hand, the second conductive layer constituting the scanning line 3a includes a refractory metal film. Alternatively, it is formed using an alloy film such as a metal film, a metal silicide, or a metal nitride. For example, Ti, TiN (titanium nitride), WSi (tungsten silicide), or the like is used. Such a second conductive layer is a light-shielding conductive layer in any case. Therefore, the light incident on the scanning line 3a from the upper side or the lower side is hardly propagated as stray light so as to be captured by the scanning line 3a and go through the optical fiber. Therefore, there is almost no possibility that the light propagated by the scanning line 3a reaches the channel portion 1a 'disposed to face the gate electrode 3g.

  If the scanning line 3a-1 is integrally constructed from the same layer as the gate electrode 3g-1 made of a light-transmitting polysilicon film as in the comparative example shown in FIG. 5, the scanning line 3a- 1 has a light-transmitting property and a refractive index higher than that of the oxide film constituting the surrounding interlayer insulating film. For this reason, incident light or the like incident obliquely on the scanning line 3a-1 is captured by the scanning line 3a-1 and propagated without repeating the total reflection and reducing the amount of light as if going through the optical fiber. The As a result, the oblique stray light 510 generated in the electro-optical device is irradiated from the scanning line 3a-1 to the gate electrode 3g-1 when intense light is irradiated, particularly as in an electro-optical device used in a projector or the like. And enters the channel region 1 a ′ of the TFT 30. Then, light leakage current is generated by excitation by stray light 510 and the characteristics of the TFT 30 change. In particular, as shown in FIG. 5, in the vicinity of the channel region 1a ′, the stray light 510 that is structurally or optically propagated differs from the scanning line 3a-1 in the scanning line 3a-1. It is easy to come out.

  On the other hand, as shown in FIG. 4, in this embodiment, light is not propagated to the scanning line 3a including the refractory metal film or the like. Therefore, according to the present embodiment, it is possible to effectively prevent a situation in which a light leakage current is generated in the TFT 30 due to the light propagated through the scanning line 3a and the transistor characteristics are changed.

  Particularly in this embodiment, the second conductive layer constituting the scanning line 6a is overlaid on the first conductive layer constituting the gate electrode 3g. Therefore, the presence of the light-shielding scanning line 3a containing a refractory metal or the like can effectively shield the gate electrode 3g or the TFT 30 disposed opposite thereto from above. In addition, in the present embodiment, since the scanning line 3a is directly overlapped on the gate electrode 3g, electrical connection between them can be easily obtained and from above at a position very close to the gate electrode 3g. Light shielding can be performed.

(Second Embodiment)
Next, an electro-optical device according to a second embodiment of the invention will be described with reference to FIG. The basic structure of the second embodiment is substantially the same as that of the first embodiment described above. FIG. 6 is a cross-sectional view taken along the line BB ′ of FIG. 2 in the second embodiment. In FIG. 6, the same reference numerals are given to the same components as those in the first embodiment described above, and the description thereof will be omitted as appropriate.

  As shown in FIG. 6, in the second embodiment, the scanning line 3 a-2 is not provided above the channel region 1 a ′ and exists between the adjacent TFTs 30 in plan view. In the contact portion 360, the gate electrode 3g-2 and the scanning line 3a-2 are electrically connected. About another structure, it is the same as that of the case of 1st Embodiment mentioned above.

  According to the second embodiment, since the scanning line 3a-2 exists between adjacent TFTs 30 along the edge of each pixel electrode 10a (see FIG. 2), the thickness of the scanning line 3a-2 is adjusted. Thereby, the surface level difference in the gate electrode 3g-2 in the TFT 30 can be relaxed. Alternatively, the surface step above the gate electrode 3g-2 can be reduced by the thickness of the scanning line 3a-2. In particular, in this embodiment, since the scanning line 3a-2 and the data line 6a intersect at this portion, the stacking height tends to be the highest. However, since the scanning line 3g-2 does not actually exist at the intersection, the thickness of the scanning line 3g-2 can be reduced by about 500 micrometers. In the present embodiment, it can be said that the gate electrode 3g-2 constitutes a part of the scanning line 3a-2.

  As a result, planarization of the surface of the uppermost layer of the substrate in the vicinity of the region where the TFT 30 exists can be promoted. Here, in the liquid crystal layer 50, when there is a surface step, alignment failure occurs due to rubbing failure or the like in the alignment film 16. Therefore, according to the present embodiment, it is possible to reduce liquid crystal alignment defects caused by such steps or irregularities.

  In the present embodiment and other embodiments, a plurality of conductive layers having a predetermined pattern are stacked as shown in FIG. 3, so that the lower ground of the pixel electrode 9 a (that is, the surface of the third interlayer insulating film 43). The step in the region along the data line 6a and the scanning line 3a in FIG. 5 may be alleviated by planarizing the surface of the third interlayer insulating film 43. For example, it is eased by polishing by CMP (Chemical Mechanical Polishing) or the like, or by forming it flat using organic SOG (Spin On Glass). As described above, by reducing the step between the region where the wiring, the element, etc. are present and the region where the wiring, element, etc. are not present, it is possible to ultimately reduce image defects such as liquid crystal alignment failure due to the step. However, instead of or in addition to performing the planarization process on the third interlayer insulating film 43 in this way, of the TFT array substrate 10, the base insulating film 12, the first interlayer insulating film 41, and the second interlayer insulating film 42. The flattening process may be performed by digging a groove in at least one and embedding the wiring such as the data line 6a or the TFT 30 or the like.

(Third embodiment)
Next, an electro-optical device according to a third embodiment of the invention will be described with reference to FIG. The basic structure of the third embodiment is generally the same as that of the first embodiment described above. FIG. 7 is a cross-sectional view taken along the line BB ′ of FIG. 2 in the third embodiment. In FIG. 7, the same components as those in the first embodiment described above are denoted by the same reference numerals, and description thereof will be omitted as appropriate.

  As shown in FIG. 7, in the third embodiment, the scanning line 3a-3 is not provided above the channel region 1a 'and exists between the TFTs 30 adjacent to each other in plan view. In the contact portion 360, the entire flat island-shaped gate electrode 3g-3 and the scanning line 3a-3 are electrically connected. The gate electrode 3g-3 is formed on the upper side of the scanning line 3a-3. About another structure, it is the same as that of the case of 1st Embodiment mentioned above.

  According to the third embodiment, similarly to the second embodiment, the surface step in the gate electrode 3g-3 in the TFT 30 can be relaxed. Alternatively, the surface step above the gate electrode 3g-3 can be reduced by the thickness of the scanning line 3a-3.

(Fourth embodiment)
Next, an electro-optical device according to a fourth embodiment of the invention will be described with reference to FIGS. The basic structure of the fourth embodiment is substantially the same as that of the first embodiment described above. FIG. 8 is a plan view of a plurality of pixel groups adjacent to each other on a TFT array substrate on which data lines, scanning lines, pixel electrodes and the like are formed in the fourth embodiment. 9 is a cross-sectional view taken along the line BB ′ of FIG. In FIGS. 8 and 9, the same components as those in the first embodiment described above are denoted by the same reference numerals, and description thereof will be omitted as appropriate.

  As shown in FIGS. 8 and 9, in the fourth embodiment, the scanning line 3a-4 is stacked on a layer different from the gate electrode 3g-4, that is, on the upper layer side via the first interlayer insulating film 41 ′. Yes. The two are electrically connected by contact holes 82 and 82 '. Accordingly, the second to fourth interlayer insulating films 42 ′ to 44 ′ are sequentially stacked on the upper layer side of the first interlayer insulating film 41 ′. About another structure, it is the same as that of the case of 1st Embodiment mentioned above.

  According to the fourth embodiment, when the scanning line 3a-4 is made of a light transmissive material such as light transmissive doped polysilicon, for example, the scanning line 3a-4 is obliquely upward or downward with respect to the scanning line 3a-4. Even if the incident light is captured by the silicon or the like and propagated as stray light so as to go through the optical fiber, the contact holes 82 and 82 'are present, so that the incident light is transmitted as it is to the gate electrode 3g-4. Absent. Therefore, there is almost no possibility that the light propagated by the scanning line 3a-4 reaches the vicinity of the channel region 1a 'disposed opposite to the gate electrode 3g-4.

  In the present embodiment, the scanning lines 3a-4 may be formed of a light-shielding conductive material containing a refractory metal or the like, as in the first to third embodiments. Alternatively, at least the contact holes 82 and 82 'may be plugged with such a light-shielding conductive material. In any case, the light propagating through the scanning line 3a-4 can be effectively prevented from entering the gate electrode 3g-4 through the contact holes 82 and 82 '.

  In addition, according to the present embodiment, since the scanning line 3a-4 does not exist immediately above the channel region 1a ′, the step above the step can be reduced as in the second or third embodiment. .

(Fifth embodiment)
Next, an electro-optical device according to a fifth embodiment of the invention will be described with reference to FIG. The basic structure of the fifth embodiment is generally the same as that of the first embodiment described above. FIG. 10 is a cross-sectional view taken along a line BB ′ in FIG. 2 according to the fifth embodiment. In FIG. 10, the same reference numerals are given to the same components as those in the first embodiment or the fourth embodiment described above, and the description thereof will be omitted as appropriate.

  As shown in FIG. 10, in the fifth embodiment, the scanning line 3a-5 is stacked in a layer different from the gate electrode 3g-5, that is, on the lower layer side via the first interlayer insulating film 41 ″. The two are electrically connected by contact holes 84 and 84 ′, and accordingly, the second interlayer insulating film 42 ″ is laminated on the upper layer side of the first interlayer insulating film 41 ″. Other configurations are the same as those in the first or fourth embodiment described above.

  According to the fifth embodiment, when the scanning line 3a-5 is made of a light-transmitting material such as light-transmitting doped polysilicon, the scanning line 3a-5 is obliquely upward or downward with respect to the scanning line 3a-5. Even if the incident light is captured by the silicon or the like and propagated as stray light so as to go through the optical fiber, the contact holes 84 and 84 'are present, so that the incident light is transmitted as it is to the gate electrode 3g-5. Absent. Therefore, there is almost no possibility that the light propagated by the scanning line 3a-5 reaches the vicinity of the channel region 1a 'disposed opposite to the gate electrode 3g-5.

  In the present embodiment, the scanning lines 3a-5 may be formed of a light-shielding conductive material containing a refractory metal or the like, as in the first to third embodiments. Alternatively, at least the contact holes 84 and 84 'may be plugged with such a light-shielding conductive material. In any case, the light propagating in the scanning line 3a-5 can be effectively prevented from entering the gate electrode 3g-5 through the contact holes 84 and 84 '.

(Sixth embodiment)
Next, an electro-optical device according to a sixth embodiment of the invention will be described with reference to FIG. The basic structure of the sixth embodiment is generally the same as that of the first embodiment described above. FIG. 11 is a cross-sectional view taken along a line BB ′ in FIG. 2 according to the sixth embodiment. In FIG. 11, the same reference numerals are given to the same components as those in the first embodiment or the fourth embodiment described above, and the description thereof will be omitted as appropriate.

  As shown in FIG. 11, in the fifth embodiment, the scanning line 3a-6 is stacked in a layer different from the gate electrode 3g-6, that is, on the upper layer side via the first interlayer insulating film 41 '. The two are electrically connected by contact holes 82 and 82 '. Further, the scanning line 3a-6 is also formed above the gate electrode 3g-6, and functions as a light shielding film against light from above the gate electrode 3g-6. That is, the scanning line 3a-6 is preferably made of a light shielding film. About another structure, it is the same as that of the case of the 1st or 4th embodiment mentioned above.

  According to the sixth embodiment, since the gate electrode 3g-6 and the scanning line 3a-6 are separate layers, the light propagating through the scanning line 3a-6 is transmitted to the gate electrode 3g-6. Almost no. Therefore, there is almost no possibility that the light propagated by the scanning line 3a-6 reaches the vicinity of the channel region 1a 'disposed to face the gate electrode 3g-6.

  In the fourth to sixth embodiments described above, the gate electrode and the scanning line are formed as separate layers, and are electrically connected via a contact hole. However, as a modification of these embodiments, a relay layer made of a light-shielding conductive material may be further provided between the two in addition to or instead of the contact hole. With this configuration, even if light that is incident on the scanning line obliquely from above or obliquely below is captured by the scanning line and propagated as stray light through the optical fiber, the gate is connected via the relay layer. It will not propagate to the electrode.

(Seventh embodiment)
Next, an electro-optical device according to a seventh embodiment of the invention will be described with reference to FIGS. The basic structure of the seventh embodiment is substantially the same as that of the first embodiment described above. FIG. 12 is a plan view of a plurality of pixel groups adjacent to each other on a TFT array substrate on which data lines, scanning lines, pixel electrodes, and the like are formed in the seventh embodiment. 13 is a cross-sectional view taken along the line BB ′ of FIG. 12 and 13, the same reference numerals are given to the same components as those in the first embodiment described above, and the description thereof will be omitted as appropriate.

  As shown in FIGS. 12 and 13, in the seventh embodiment, the scanning line 3a-7 is formed as the same layer as the gate electrode 3g-7. Both are separated on both sides of the TFT 30 and are electrically connected to each other by island-shaped conductive light shielding members 86 and 86 '. The light shielding members 86 and 86 'are made of, for example, a metal film, metal silicide, metal nitride, or the like. About another structure, it is the same as that of the case of 1st Embodiment mentioned above.

  According to the seventh embodiment, when the gate electrode 3g-7 and the scanning line 3a-7 are made of a light-transmitting material such as light-transmitting doped polysilicon, the scanning line 3a-7 Even if light incident from the upper side or the lower side is captured by the silicon or the like and propagated as stray light so as to go through the optical fiber, the light shielding members 86 and 86 'exist, so that the gate electrode 3g-7 It is not transmitted as it is. Therefore, there is almost no possibility that the light propagated by the scanning line 3a-7 reaches the vicinity of the channel region 1a 'disposed opposite to the gate electrode 3g-7.

  In addition, according to the present embodiment, since the scanning line 3a-7 does not exist immediately above the channel region 1a ′, the step above the step can be reduced as in the second to fourth embodiments. .

  As a modification of the seventh embodiment, the gate electrode 3g-7 formed as the same layer and divided between the scanning line 3a-7 and the scanning line 3a-7 are arranged above or below the interlayer insulating film. You may electrically connect through the conductive layer formed in another layer. Further, at this time, the conductive layer may be constructed from a light-shielding conductive material. In addition, what is necessary is just to connect between such a conductive layer and the gate electrode 3g-7, and between such a conductive layer and the scanning line 3a-7 through a contact hole.

(Eighth embodiment)
Next, an electro-optical device according to an eighth embodiment of the invention will be described with reference to FIG. The basic structure of the eighth embodiment is generally the same as that of the first embodiment described above. FIG. 14 is a cross-sectional view taken along a line BB ′ in FIG. 2 according to the eighth embodiment. In FIG. 14, the same reference numerals are given to the same components as those in the first embodiment or the seventh embodiment described above, and the description thereof will be omitted as appropriate.

  As shown in FIG. 14, in the eighth embodiment, the scanning line 3a-8 and the gate electrode 3g-8 are formed as the same layer as in the seventh embodiment. Between both sides, silicidized light shielding portions 186 and 186 ′ are interposed on both sides of the TFT 30. At this time, the silicidized light-shielding portions 186 and 186 'also function as conductive portions that electrically connect the scanning lines 3a-8 and the gate electrodes 3g-8. About another structure, it is the same as that of the case of the 1st or 7th embodiment mentioned above.

  According to the eighth embodiment, when the gate electrode 3g-8 and the scanning line 3a-8 are made of a light-transmitting material such as light-transmitting doped polysilicon, the scanning line 3a-8 Even if light incident from above or below is captured by the silicon or the like and propagates as stray light so as to go through the optical fiber, the light shielding portions 186 and 186 'exist, and therefore the gate electrode 3g-8 It is not transmitted as it is. Therefore, there is almost no possibility that the light propagated by the scanning line 3a-8 reaches the vicinity of the channel region 1a 'disposed opposite to the gate electrode 3g-8.

  The light shielding portions 186 and 186 'are formed by forming a thin film pattern of a metal such as Ti (titanium) or W (tungsten) on the scanning line 3a-8 made of, for example, a polysilicon film and the like. The metal can be formed relatively easily by infiltrating the polysilicon and siliciding.

  In the first to eighth embodiments described above, the pixel switching TFT 30 preferably has an LDD structure as shown in FIG. 3, but an impurity is implanted into the low concentration source region 1b and the low concentration drain region 1c. A self-aligned TFT that forms high-concentration source and drain regions in a self-aligned manner by implanting impurities at a high concentration using a gate electrode formed of a part of the scanning line 3a as a mask. Also good. In each embodiment, a single gate structure in which only one gate electrode of the pixel switching TFT 30 is arranged between the high-concentration source region 1d and the high-concentration drain region 1e is used. However, two or more gate electrodes are provided between these gate electrodes. You may arrange. If the TFT is configured with dual gates or triple gates or more in this way, leakage current at the junction between the channel and the source and drain regions can be prevented, and the off-time current can be reduced. Further, the TFT 30 is not limited to the top gate type, and may be a bottom gate type.

(Overall configuration of electro-optical device)
The overall configuration of the electro-optical device according to each embodiment configured as described above will be described with reference to FIGS. 15 and 16. 15 is a plan view of the TFT array substrate 10 as viewed from the counter substrate 20 side together with the components formed thereon, and FIG. 16 is a cross-sectional view taken along the line HH ′ of FIG.

  In FIG. 15, a sealing material 52 is provided on the TFT array substrate 10 along the edge thereof, and a light shielding film 53 as a frame defining the periphery of the image display region 10a is provided in parallel to the inside thereof. Is provided. In a region outside the sealing material 52, a data line driving circuit 101 and an external circuit connection terminal 102 for driving the data line 6a by supplying an image signal to the data line 6a at a predetermined timing along one side of the TFT array substrate 10. A scanning line driving circuit 104 that drives the scanning line 3a by supplying a scanning signal to the scanning line 3a at a predetermined timing is provided along two sides adjacent to the one side. Needless to say, if the delay of the scanning signal supplied to the scanning line 3a is not a problem, the scanning line driving circuit 104 may be provided on only one side. The data line driving circuit 101 may be arranged on both sides along the side of the image display area 10a. Further, on the remaining side of the TFT array substrate 10, a plurality of wirings 105 are provided for connecting between the scanning line driving circuits 104 provided on both sides of the image display region 10a. Further, at least one corner of the counter substrate 20 is provided with a conductive material 106 for electrical connection between the TFT array substrate 10 and the counter substrate 20. As shown in FIG. 16, the counter substrate 20 having substantially the same contour as the sealing material 52 shown in FIG. 15 is fixed to the TFT array substrate 10 by the sealing material 52.

  On the TFT array substrate 10, in addition to the data line driving circuit 101, the scanning line driving circuit 104 and the like, a sampling circuit for applying an image signal to the plurality of data lines 6a at a predetermined timing, and a plurality of data lines A precharge circuit for supplying a precharge signal of a predetermined voltage level in advance to the image signal to 6a, an inspection circuit for inspecting quality, defects, etc. of the electro-optical device during manufacture or at the time of shipment are formed. Also good.

  In the embodiment described above with reference to FIGS. 1 to 16, instead of providing the data line driving circuit 101 and the scanning line driving circuit 104 on the TFT array substrate 10, for example, they are mounted on a TAB (Tape Automated Bonding) substrate. The drive LSI may be electrically and mechanically connected via an anisotropic conductive film provided on the periphery of the TFT array substrate 10. Further, for example, a TN (Twisted Nematic) mode, an STN (Super Twisted Nematic) mode, and a VA (Vertically Aligned) are respectively provided on the side on which the projection light of the counter substrate 20 enters and the side on which the emission light of the TFT array substrate 10 exits. A polarizing film, a retardation film, a polarizing plate, and the like are arranged in a predetermined direction according to the operation mode such as the mode, the PDLC (Polymer Dispersed Liquid Crystal) mode, and the normally white mode / normally black mode.

  Since the electro-optical device in the embodiment described above is applied to a projector, three electro-optical devices are respectively used as RGB light valves, and each light valve is connected to a dichroic mirror for RGB color separation. The light of each color that has been decomposed is incident as projection light. Therefore, in each embodiment, the counter substrate 20 is not provided with a color filter. However, an RGB color filter may be formed on the counter substrate 20 together with its protective film in a predetermined region facing the pixel electrode 9a. Further, micro lenses may be formed on the counter substrate 20 so as to correspond to one pixel. Alternatively, it is also possible to form a color filter layer with a color resist or the like under the pixel electrodes 9 a facing RGB on the TFT array substrate 10. Furthermore, a dichroic filter that produces RGB colors by using interference of light may be formed by depositing several layers of interference layers having different refractive indexes on the counter substrate 20.

(Embodiment of electronic device)
Next, an overall configuration, particularly an optical configuration, of an embodiment of a projection color display device as an example of an electronic apparatus using the electro-optical device described in detail as a light valve will be described. FIG. 17 is a schematic cross-sectional view of the projection type color display device.

  In FIG. 17, a liquid crystal projector 1100, which is an example of a projection type color display device according to the present embodiment, prepares three liquid crystal modules including a liquid crystal device 100 having a drive circuit mounted on a TFT array substrate. It is configured as a projector used as the valves 100R, 100G, and 100B. In the liquid crystal projector 1100, when projection light is emitted from a lamp unit 1102 of a white light source such as a metal halide lamp, light components R, G, and R corresponding to the three primary colors of RGB are obtained by three mirrors 1106 and two dichroic mirrors 1108. B is divided into the light valves 100R, 100G and 100B corresponding to the respective colors. At this time, in particular, the B light is guided through a relay lens system 1121 including an incident lens 1122, a relay lens 1123, and an exit lens 1124 in order to prevent light loss due to a long optical path. The light components corresponding to the three primary colors modulated by the light valves 100R, 100G, and 100B are synthesized again by the dichroic prism 1112 and then projected as a color image on the screen 1120 via the projection lens 1114.

  The present invention can be applied to various electro-optical devices such as electrophoretic devices such as electronic paper and EL display devices in addition to the liquid crystal devices as in the above-described embodiments.

  The present invention is not limited to the above-described embodiments, and can be appropriately changed without departing from the gist or concept of the invention that can be read from the claims and the entire specification. A substrate, an electro-optical device, and an electronic apparatus are also included in the technical scope of the present invention.

3 is an equivalent circuit of various elements, wirings, and the like provided in a plurality of pixels in a matrix form constituting an image display region in the electro-optical device according to the first embodiment of the present invention. 2 is a plan view of a plurality of pixel groups adjacent to each other on a TFT array substrate on which data lines, scanning lines, pixel electrodes and the like are formed in the electro-optical device of the first embodiment. It is A-A 'sectional drawing of FIG. 2 in 1st Embodiment. It is B-B 'sectional drawing of FIG. 2 in 1st Embodiment. It is B-B 'sectional drawing in a comparative example. It is sectional drawing in the location corresponding to the B-B 'cross section of FIG. 2 in 2nd Embodiment of this invention. It is sectional drawing in the location corresponding to the B-B 'cross section of FIG. 2 in 3rd Embodiment of this invention. It is a top view of a plurality of pixel groups which a TFT array substrate in which a data line, a scanning line, a pixel electrode, etc. formed in a 4th embodiment of the present invention mutually adjoins. It is B-B 'sectional drawing of FIG. It is sectional drawing in the location corresponding to the B-B 'cross section of FIG. 2 in 5th Embodiment of this invention. It is sectional drawing in the location corresponding to the B-B 'cross section of FIG. 2 in 6th Embodiment. It is a top view of a plurality of pixel groups which a TFT array substrate in which a data line, a scanning line, a pixel electrode, etc. were formed in a 7th embodiment of the present invention adjoin. It is B-B 'sectional drawing of FIG. It is sectional drawing in the location corresponding to the B-B 'cross section of FIG. 2 in 8th Embodiment of this invention. FIG. 2 is a plan view of an electro-optic substrate in an embodiment of the electro-optic device of the present invention, as viewed from the side of a counter substrate together with each component formed thereon It is H-H 'sectional drawing of FIG. 1 is a schematic block diagram of a projection type color display device according to an embodiment of an electronic apparatus of the present invention.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1a '... Channel region, 3g ... Gate electrode, 3a ... Scan line, 6a ... Data line, 9a ... Pixel electrode, 10 ... TFT array substrate, 20 ... Counter substrate, 30 ... TFT, 50 ... Liquid crystal layer.

Claims (10)

On the board
A pixel electrode;
A thin film transistor provided corresponding to the pixel electrode;
An interlayer insulating film covering the thin film transistor;
A scanning line provided on the opposite side of the interlayer insulating film from the substrate;
Contact holes formed on both sides of the semiconductor layer of the thin film transistor in plan view in the interlayer insulating film,
The scan line is electrically connected to the gate electrode of the thin film transistor through the contact hole, and is not provided in a region overlapping at least the channel region of the thin film transistor facing the gate electrode. An electro-optic substrate. A first light shielding film provided between the semiconductor layer of the thin film transistor and the substrate, and a second light shielding film provided on an interlayer insulating film covering the scanning line,
2. The electro-optic substrate according to claim 1, wherein the first and second light shielding films are provided so as to cover a channel region of the thin film transistor from above and below, respectively. The electro-optical substrate according to claim 2, wherein the second light shielding film is formed of a capacitor line formed so as to overlap the scanning line.   The electro-optic substrate according to claim 1, wherein a data line is provided above the channel region.   The electro-optical substrate according to claim 1, wherein the scanning line includes a refractory metal film. The scanning lines, electro-optic substrate according to claim 1, any one of 4, characterized in that it comprises a silicon compound.   The electro-optical substrate according to claim 1, wherein the scanning line is made of polysilicon.   5. The electro-optic substrate according to claim 1, wherein the scanning line has a multilayer structure including a metal film, a conductive film, and a semiconductor film. The electro-optic substrate according to any one of claims 1 to 8 ,
A counter substrate disposed opposite to the electro-optic substrate;
An electro-optic material sandwiched between the counter substrate and the electro-optic substrate;
An electro-optical device comprising: An electronic apparatus comprising the electro-optical device according to claim 9 .

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