JP4731418B2 - Semiconductor module - Google Patents

Description

  The present invention relates to a semiconductor module, and more particularly to a semiconductor module having a function of detecting a current output from a semiconductor element.

Conventionally, a method of detecting a current flowing through a conductor with a coil has been used. For example, Japanese Patent Laying-Open No. 2002-40057 (Patent Document 1) discloses a current detection coil and a current detection method using the coil. According to the above document, a coil conductor (single-turn coil alone, and thus a multi-turn coil) is constituted by a thin film conductor and a through-hole formed integrally on a substrate, and the current detection coil as a whole Take the form of a card or plate. By affixing this card type current detection coil to the side surface or peripheral surface of the conductor through which the current to be detected flows, the current to be detected can be detected.
Japanese Patent Laid-Open No. 2002-40057

  In a conventional semiconductor module (power module), a current sensor using a coil or a hall element is attached to a bus bar, and a lead wire derived from the current sensor is connected to a circuit having a current detection function. However, the current sensor configured as described above has problems such as high cost, difficulty in miniaturization, and difficulty in obtaining high measurement accuracy.

  The current flowing through the lead wire is susceptible to the noise generated around the lead wire. In addition, if the arrangement of the lead wires varies during manufacturing of the semiconductor module, the degree of influence of noise varies for each product (semiconductor module). Since the longer the lead wire, the more difficult it is to stabilize the position of the lead wire, such a problem becomes remarkable.

  As a method for preventing the above problem, a method of fixing the lead wire at a plurality of locations on the lead wire can be considered. However, although this method can stabilize the position of the lead wire, the workability at the time of assembling the semiconductor module is lowered.

  Also, the smaller the current output from the coil, the lower the current detection accuracy. For this reason, it becomes difficult to accurately obtain the output current from the semiconductor module. The current detection coil disclosed in Japanese Patent Laying-Open No. 2002-40057 (Patent Document 1) has a configuration in which conductor patterns formed on a front surface and a back surface of a printed circuit board are connected by through-hole electrodes. . The distance between the conductor pattern formed on the front surface of the printed board and the conductor pattern formed on the back surface of the printed board is only the thickness of the board.

  When the coil having such a configuration is brought close to the detected current, the conductors on both sides of the printed circuit board are affected by the magnetic field generated by the detected current. For this reason, an induced current flows through the conductor on each surface. When viewed from the direction perpendicular to both sides of the printed circuit board, the directions of the induced currents flowing through the conductors on each side are the same. That is, the induced currents cancel each other out inside the coil. For this reason, the electric current output from a coil becomes small.

  An object of the present invention is to provide a semiconductor module capable of accurately detecting an output current.

  In summary, the present invention is a semiconductor module comprising a semiconductor element that outputs a current, an electrode having one end that receives the current, and the other end that outputs the current; A wiring board having an insulator and a coil formed with the insulator interposed therebetween. The coil has a plurality of first conductor patterns formed linearly on one surface located on the side closer to the electrode in the insulator, and a linear shape on the other surface located on the opposite side of the one surface in the insulator. And a plurality of through-hole electrodes that spirally connect the plurality of first conductor patterns and the plurality of second conductor patterns. The semiconductor module is formed inside the wiring board, formed on the first main surface of the wiring board, the first and second wiring patterns that are electrically coupled to one end and the other end of the coil, respectively. A first ground electrode that appears to cover the first and second wiring patterns when viewed from one main surface toward the second main surface; and on the opposite side to the first main surface A second main surface that is formed on the second main surface of the wiring substrate located and that appears to cover the first and second wiring patterns when viewed from the second main surface toward the first main surface. And a ground electrode.

  According to the present invention, the current output from the semiconductor module can be detected with high accuracy.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the drawings, the same or corresponding parts are denoted by the same reference numerals and description thereof will not be repeated.

[Reference example]
FIG. 1 is a diagram illustrating an example of a circuit configuration of the semiconductor module 100.

  Referring to FIG. 1, semiconductor module 100 constitutes a three-phase inverter circuit that drives AC motor 101. The three-phase inverter circuit includes a U-phase arm, a V-phase arm, and a W-phase arm that have the same configuration. Therefore, in FIG. 1, only the configuration of the U-phase arm is representatively shown, and the configurations of the V-phase arm and the W-phase arm are not shown. In FIG. 1, the symbol “///” displayed between the semiconductor module 100 and the AC motor 101 is an abbreviated symbol representing three phases.

  The semiconductor module 100 includes terminals T1 to T3, IGBTs (Insulated Gate Bipolar Transistor) elements Q1 and Q2, diodes D1 and D2 connected in parallel to the IGBT elements Q1 and Q2, respectively, a coil 1, and a control circuit 2. including.

  A DC voltage VCC is applied between the terminal T1 and the terminal T2. IGBT elements Q1, Q2 are connected in series between terminal T1 and terminal T2.

  The collector of IGBT element Q1 is connected to terminal T1, the gate of IGBT element Q1 is connected to control circuit 2, and the emitter of IGBT element is connected to terminal T3. The collector of IGBT element Q2 is connected to terminal T3, the gate of IGBT element Q2 is connected to control circuit 2, and the emitter of IGBT element Q2 is connected to terminal T2.

  The coil 1 detects a current flowing through the AC motor 101 (that is, a current output from the semiconductor module 100). The current flowing through the coil 1 changes according to the current output from the semiconductor module 100. The control circuit 2 measures the current flowing through the coil 1. The control circuit 2 obtains the magnitude of the current flowing through the AC motor 101 from the measurement result. The control circuit 2 controls the driving of the IGBT elements Q1 and Q2 according to the magnitude of the current flowing through the AC motor 101. The control circuit 2 corresponds to the “measurement circuit” of the present invention.

FIG. 2 is a cross-sectional view schematically showing the structure of the semiconductor module 100 shown in FIG.
Referring to FIG. 2, control circuit 2 is mounted on the front main surface of wiring board 3. However, the control circuit 2 may be mounted on the main surface on the back side of the wiring board 3. Specifically, the control circuit 2 is a semiconductor integrated circuit such as a control IC (Integrated Circuit) or a microcomputer. The control circuit 2 not only controls the driving of the IGBT element Q1, but also has various functions for protecting the IGBT element Q1. Examples of the protection function provided in the control circuit 2 include an overcurrent protection function, an overvoltage protection function, an overheat protection function, and the like.

  The wiring board 3 is a multilayer board in which a plurality of insulating layers are stacked. The coil 1 is formed on the wiring board 3. The configuration of the coil 1 will be described in detail later.

  Wiring patterns 21 and 22 are formed inside the wiring substrate 3. In FIG. 2, the wiring patterns 21 and 22 are collectively referred to as a wiring pattern 21 (22). The control circuit 2 is coupled to the coil 1 via the wiring pattern 21 (22). As a result, the control circuit 2 can receive a current flowing through the coil 1.

  The semiconductor module 100 further includes electrodes 11 and 12, a resin case 13, a substrate 14, a base portion 15, and a relay terminal 16. The substrate 14 includes an insulator 14A, copper foils 14B1 and 14B2 provided on the front surface of the insulator 14A, and a copper foil 14C provided on the back surface of the insulator 14A.

  One end of the electrode 11 corresponds to the terminal T1 shown in FIG. The other end of the electrode 11 is in contact with the copper foil 14B1. One end of the electrode 12 is in contact with the copper foil 14B2. The other end of the electrode 12 corresponds to the terminal T3 shown in FIG. A part of each of the electrodes 11 and 12 is embedded in the resin case 13.

  IGBT element Q1 and diode D1 are semiconductor chips that ride on copper foil 14B1. IGBT element Q1 collector electrode (indicated by symbol “C”) is electrically coupled to copper foil 14B1. The gate terminal (indicated by “G”) and emitter terminal (indicated by “E”) of IGBT element Q1 are provided on the surface of the semiconductor chip located on the opposite side to the collector electrode. The gate terminal is coupled to the relay terminal 16 via a wire made of aluminum or the like. The relay terminal 16 is coupled to the control circuit 2 via a wiring (not shown) provided on the wiring board 3.

  The emitter terminal of IGBT element Q1 is coupled to the anode electrode of diode D1 (indicated by “A”) through a wire. Furthermore, the anode electrode of the diode D1 is coupled to the copper foil 14B2 via a wire. As a result, the current (detected current I) output from the emitter terminal of the IGBT element Q1 flows from one end of the electrode 12 toward the other end (terminal T3).

  The cathode electrode of the diode D1 (indicated by the symbol “K”) is formed on the surface of the semiconductor chip located on the opposite side to the anode electrode. Therefore, the cathode electrode is electrically coupled to copper foil 14B1. As described above, IGBT circuit Q1, diode D1, and control circuit 2 are electrically connected to implement the circuit shown in FIG.

  The copper foil 14 </ b> C contacts the base portion 15. In order to efficiently release the heat generated in IGBT element Q1 and diode D1, base portion 15 is formed using a metal (eg, aluminum) having excellent thermal conductivity.

  Although not shown in FIG. 2, the upper part of the wiring board 3 is covered with resin. In order to prevent the figure from becoming complicated, the IGBT element Q2 and the diode D2 shown in FIG. 1 are not shown in FIG.

Next, the configuration of the coil 1 in FIG. 2 and its peripheral portion will be described in more detail.
FIG. 3 is an enlarged plan view of the coil 1 of FIG. 2 and its peripheral portion.

  FIG. 4 is a diagram illustrating the configuration of the portion shown in FIG. 3 of the wiring board 3. In order to show the configuration of the end portion of the coil 1 as easily as possible, only one end and the other end of the coil 1 are shown in FIG.

  Referring to FIGS. 3 and 4, electrode 12 electrically connected from IGBT element Q <b> 1 by an aluminum wire passes through the inside of resin case 13 and is led to the upper surface of resin case 13. The terminal T3 is perforated. In the resin case 13, a nut 25 is embedded below the terminal T3. The electrode 12 and the AC motor 101 are connected via a bus bar (not shown). The bus bar is connected to the electrode 12 by passing the bolt through the hole formed in the terminal T3 and tightening the bolt.

  The wiring board 3 has a plurality of insulating layers 20A to 20C. The wiring board 3 is parallel to at least a part of the electrode 12 and close to each other.

  The coil 1 is formed at an end portion of the wiring substrate 3 (that is, a portion close to the electrode 12 in the wiring substrate 3). In particular, as shown in FIG. 4, the coil 1 is formed with a plate-like insulator (that is, the insulating layers 20A to 20C) interposed therebetween.

The coil 1 includes a plurality of conductor patterns 1A formed in a line, a plurality of conductor patterns 1B formed in a line, and a plurality of through-hole electrodes 1C. The plurality of conductor patterns 1 </ b> A are formed on the main surface 3 </ b> A that is a surface on the side close to the electrode 12 in the wiring substrate 3. The plurality of conductor patterns 1B are formed on the main surface 3B located on the opposite side of the main surface 3A in the wiring board 3. In the reference example , the main surfaces 3A and 3B correspond to “one surface” and “the other surface” of the insulator in the present invention, respectively.

  As shown in FIG. 4, the extending direction of the conductor patterns 1 </ b> A and 1 </ b> B is substantially parallel to the direction of the detected current I flowing through the electrode 12. The plurality of conductor patterns 1A and 1B are connected by through-hole electrodes 1C located at both ends of each conductor pattern. Thus, one conductive wire having a spiral shape, that is, the coil 1 is formed on the wiring board 3.

By forming the coil 1 on the wiring board 3 in this way, the wiring board 3 (control board) on which the control circuit 2 is mounted can detect the magnitude of the detected current I. Therefore, according to the reference example , the current sensor can be reduced in size. In addition, the number of components mounted on the wiring board 3 can be reduced by forming the coil 1 with a conductor pattern. Therefore, the manufacturing cost can be reduced.

  Further, if the wiring board 3 is installed inside the semiconductor module, the current sensor (that is, the coil 1) is inevitably installed at a predetermined measurement place, so that the trouble of separately installing the current sensor can be saved. Therefore, the semiconductor module can be easily assembled.

  Wiring patterns 21 and 22 are formed inside the wiring substrate 3. The wiring pattern 21 is formed between the insulating layer 20A and the insulating layer 20B. The wiring pattern 22 is formed between the insulating layer 20B and the insulating layer 20C.

  The wiring pattern 21 is electrically coupled to the conductor pattern 1A located on one end side of the coil 1 among the plurality of conductor patterns 1A via the through-hole electrode 1C. The wiring pattern 22 is electrically coupled to the conductor pattern 1B located on the other end side of the coil 1 among the plurality of conductor patterns 1B via the through-hole electrode 1C. Thus, both ends of the coil 1 are coupled to the wiring patterns 21 and 22, respectively.

  A ground electrode 23 is formed on the main surface 3 A of the wiring board 3, and a ground electrode 24 is formed on the main surface 3 B of the wiring board 3.

  As shown in FIG. 3, when viewed from the main surface 3 </ b> B toward the main surface 3 </ b> A, the ground electrode 24 appears to cover the wiring patterns 21 and 22. Since the ground electrode 23 overlaps the ground electrode 24, the ground electrode 24 is not shown in FIG. That is, the ground electrode 23 appears to cover the wiring patterns 21 and 22 when viewed from the main surface 3A toward the main surface 3B. In other words, the width of the ground electrodes 23, 24 (the length in the same direction as the line width direction of the wiring patterns 21, 22) is wider than the line width of the wiring patterns 21, 22.

  Inside the wiring board 3, a magnetic core 1E is provided in a state of being insulated from the plurality of conductor patterns 1A and 1B. The magnetic core 1E is provided so as to penetrate the inside of the coil 1. The material of the magnetic core 1E is, for example, iron. The material of the magnetic core 1E may be nickel, cobalt, etc., for example.

  As described above, the wiring board 3 is formed by laminating a plurality of insulating layers. The insulating layer is a sheet-like insulating material such as a prepreg. The method for arranging the magnetic core 1E inside the wiring board 3 is, for example, as follows. First, the insulating layers 20A and 20B are sequentially stacked, and a recess is formed in the insulating layer 20B. Next, an iron plate is inserted into the recess. Subsequently, the insulating layer 20C is overlaid on the insulating layer 20B. Thereby, the magnetic core 1 </ b> E is disposed inside the wiring board 3.

  Next, the operation of the semiconductor module 100 will be described. As described above, the semiconductor module 100 is a three-phase inverter circuit including a U-phase arm, a V-phase arm, and a W-phase arm. A direct current output from a direct current power source (battery or the like) (not shown) is converted into an alternating current by the semiconductor module 100. The alternating current output from the semiconductor module 100 flows to the alternating current motor 101 via a bus bar (not shown).

  Further description will be given with reference to FIGS. When an alternating current flows through the electrode 12, a magnetic field is generated around the electrode 12, and the direction and magnitude of the magnetic field change. As the magnetic field penetrates the coil 1, an induced current flows through the coil 1. The induced current is measured by the control circuit 2 shown in FIG. 1 (and FIG. 2).

Since the induced current is weak, the current flowing through the wiring patterns 21 and 22 is easily affected by noise generated by the surrounding electric field or magnetic field. In general, since a power module is used for switching a large current, noise sources are present at various points in the power module. For example, when the power module is used for driving an AC motor as shown in FIG. 1 , noise may occur in the bus bar or the AC motor. Further, when the power module is mounted on an automobile, noise may be generated, for example, by a spark plug.

In the reference example , the ground electrodes 23 and 24 are formed on the surface of the wiring board 3 so as to cover the wiring patterns 21 and 22. Therefore, the wiring patterns 21 and 22 are shielded by the ground electrodes 23 and 24. As a result, the influence of noise on the current flowing in the wiring patterns 21 and 22 can be prevented.

Conventionally, the arrangement of lead wires connected to both ends of the coil varies from one semiconductor module to another, resulting in a problem that the degree of influence of noise differs from one semiconductor module to another. According to the reference example , the wiring patterns 21 and 22 are formed on the wiring substrate 3 by a patterning process. Thereby, the dispersion | variation in the position of the wiring connected to the both ends of a coil can be reduced rather than before. Therefore, the above-described problem can be solved.

  Further, a magnetic core 1E is installed inside the coil 1. Thereby, the induced current flowing through the coil 1 can be increased. One of the reasons is that the induced current of the plurality of conductor patterns 1B is suppressed by the magnetic core 1E shielding the magnetic field generated around the electrode 12. This point will be described below with reference to the drawings.

  FIG. 5 is a diagram illustrating an induced current that flows through the coil 1 when the magnetic core 1 </ b> E is not provided inside the coil 1.

  Referring to FIG. 5, when detected current I (alternating current) flows in electrode 12 in the illustrated direction, a closed loop magnetic flux (magnetic field) is generated around electrode 12. A part of the magnetic flux φ passes through the wiring board 3 so as to penetrate the inside of the coil 1 in the axial direction. When the detected current I changes, the magnetic flux φ also changes proportionally. As a result, an induced current flows through the conductor patterns 1A and 1B.

  The shorter the distance between the electrode 12 and the coil 1, the greater the induced current flowing through the coil 1. Since the conductor pattern 1A is close to the detected current I, naturally an induced current is generated. However, since the wiring board 3 is thin, the conductor pattern 1B is also affected by the magnetic flux φ. For this reason, an induced current also flows through the conductor pattern 1B.

  The induced current flowing through the conductor pattern 1A is ia, and the induced current flowing through the conductor pattern 1B is ib. When viewed from a direction perpendicular to the surface of the wiring board 3, the direction in which the induced current ia flows is substantially the same as the direction in which the induced current ib flows.

  For this reason, the induced currents ia and ib cancel each other. Since the conductor pattern 1A is closer to the electrode 12 than the conductor pattern 1B, the induced current ia is slightly larger than the induced current ib. For this reason, although a current equal to the difference between the induced current ia and the induced current ib is output from the coil 1, the magnitude of the current is small.

  FIG. 6 is a diagram illustrating an induced current flowing through the coil 1 when the magnetic core 1 </ b> E is provided inside the coil 1.

  Referring to FIG. 6, the magnetic core 1E serves to shield the magnetic flux φ. For this reason, in the conductor pattern 1B, the influence of the magnetic flux φ is reduced. As a result, when viewed from the direction perpendicular to the surface of the wiring board 3, the direction in which the induced current ia flows and the direction in which the induced current ib flows are opposite. Therefore, the current output from the coil 1 increases.

  Further, by providing the coil 1 (particularly, the conductor pattern 1A) close to the electrode 12, the magnetic field at the position of the coil 1 becomes strong. Further, by providing the magnetic core 1E inside the coil 1, the magnetic field penetrating the coil becomes stronger. For these reasons, the induced current generated in the coil 1 is increased.

As the induced current increases, the control circuit 2 can accurately determine the value of the induced current. This means that the control circuit 2 can accurately detect the magnitude of the alternating current flowing through the electrode 12. That is, according to the reference example , the magnitude of the alternating current flowing through the electrode 12 can be accurately detected.

  Note that the longer the wiring patterns 21 and 22 are, the more easily noise influences the current flowing through the wiring patterns 21 and 22. Therefore, the wiring patterns 21 and 22 are preferably as short as possible. In addition, as the number of turns of the coil 1 increases, the induced current flowing through the coil increases. For this reason, it is preferable that the number of the plurality of conductor patterns 1A and 1B is as large as possible.

Thus, in the reference example , two ground electrodes are provided to sandwich the two wiring patterns respectively connected to both ends of the coil. Thereby, it is possible to detect the induced current generated in the coil while preventing the problem of noise. Moreover, according to the reference example , the induced current generated in the coil can be increased by arranging the magnetic core inside the coil. Therefore, according to the reference example , it is possible to accurately detect the current output from the semiconductor module.

[Form state of implementation]
Circuit structure of the semiconductor module in the form status of the implementation thereof will not be repeated description is the same as the circuit configuration of the semiconductor module 100 shown in FIG. The cross-sectional structure of the semiconductor module in the form status of implementation is the same as the cross-sectional structure of the semiconductor module 100 shown in FIG.

Compare with the form on purpose reference example of embodiment is a configuration of a magnetic core provided inside the coil 1. Hereinafter, this point will be described.

Figure 7 is an enlarged plan view of the coil 1 and its periphery provided in the semiconductor module in the form status of implementation.

  FIG. 8 is a diagram illustrating the configuration of the portion shown in FIG. As in FIG. 4, FIG. 8 shows only one end and the other end of the coil 1, and does not show the middle part of the coil 1.

Referring to FIGS. 7 and 8, the magnetic core 1F1,1F2 is provided inside the coil 1 in the form status of implementation.

  The magnetic cores 1F1 and 1F2 are formed by patterning similarly to the wiring patterns 21 and 22. The magnetic core 1F1 is formed by patterning a magnetic core foil attached to the insulating layer 20A by etching. On the magnetic core 1F1, an insulating layer 20B made of, for example, the above-described prepreg is laminated. The magnetic core 1F2 is formed by patterning a magnetic foil attached to the insulating layer 20B by etching. An insulating layer 20C is laminated on the magnetic core 1F1.

  In short, the magnetic core 1F1 is formed between two adjacent insulating layers 20A and 20B among the plurality of insulating layers 20A to 20C. Similarly, the magnetic core 1F2 is formed between two adjacent insulating layers 20B and 20C among the plurality of insulating layers 20A to 20C.

Forming the magnetic core in this way facilitates the formation of the magnetic core. Therefore, according to the shape condition of the embodiment can reduce the manufacturing cost of the semiconductor module than the reference example.

  The wiring patterns 21 and 22 may be formed of the same material (that is, a magnetic material) as the magnetic cores 1F1 and 1F2. Moreover, the wiring patterns 21 and 22 may be formed of copper foil.

  The magnetic cores 1F1 and 1F2 may be formed of a single material (for example, chromium, nickel, etc.), or may have a configuration shown in the following drawings.

FIG. 9 is a diagram schematically illustrating a configuration example of the magnetic cores 1F1 and 1F2 illustrated in FIG.
Referring to FIG. 9, magnetic cores 1 </ b> F <b> 1 and 1 </ b> F <b> 2 are provided inside wiring substrate 3. The magnetic core 1F1 includes a copper foil 31 (core material) formed by patterning on the insulating layer 20A and a film-like magnetic body 32 formed on the surface of the copper foil 31. The magnetic core 1F2 includes a copper foil 31 formed by patterning on the insulating layer 20B, and a film-like magnetic body 32 formed on the surface of the copper foil.

The material of the magnetic body 32 is, for example, nickel or chrome. The magnetic body 32 is provided on the surface of the copper foil 31 by plating, vapor deposition, or the like. By forming the magnetic core having such a structure, it is easier to arrange the magnetic core inside the coil 1 than in the reference example . The number of magnetic cores is not limited, and may be one or more than two.

The coil inside the magnetic core can be easily formed according to the shape condition of the embodiment as described above. According thereby to form state of implementation it is possible to reduce the manufacturing cost of the semiconductor module.

[ Other reference examples ]
Since the circuit configuration of the semiconductor module of the other reference example is similar to the circuit configuration of semiconductor module 100 shown in FIG. 1, the following description will not be repeated. The cross-sectional structure of the semiconductor module of another reference example is the same as the cross-sectional structure of the semiconductor module 100 shown in FIG.

The difference between the two reference examples is the configuration of the end portion (the portion including the coil 1) of the wiring board 3 shown in FIG.

FIG. 10 is an enlarged plan view of the coil 1 and its peripheral portion included in the semiconductor module of another reference example .

  FIG. 11 is a diagram illustrating the configuration of the portion shown in FIG. As in FIG. 4, FIG. 11 shows only one end and the other end of the coil 1, and does not show the middle part of the coil 1.

Referring to FIGS. 10 and 11, a plurality of conductor patterns 1B are formed on the surface of insulating layer 20B and covered with insulating layer 20C. That is, in this reference example , the insulating layers 20A and 20B correspond to the “plate-like insulator” in the present invention, and the insulating layer 20C corresponds to the “insulating layer covering the plurality of second patterns” in the present invention.

When viewed in the direction from the main surface 3B to the main surface 3A of the substrate, the ground electrode 24 is formed on the main surface 3B so as to cover not only the wiring patterns 21 and 22 but also the coil 1. The two reference examples are different in this respect.

  10 and FIG. 11 are the same as the corresponding parts in FIG. 3 and FIG. 4, and thus the description thereof will not be repeated.

As described above, noise sources may exist in various places around the semiconductor module. Since the plurality of conductor patterns 1B are closer to the surface of the semiconductor module than the plurality of conductor patterns 1A, the plurality of conductor patterns 1B are more susceptible to noise than the plurality of conductor patterns 1A. In this reference example , since the ground electrode 24 covers the plurality of conductor patterns 1B, it is possible to further improve the resistance to noise due to an electric field or a magnetic field from the surroundings.

  The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

2 is a diagram illustrating an example of a circuit configuration of a semiconductor module 100. FIG. It is sectional drawing which shows the structure of the semiconductor module 100 shown in FIG. 1 typically. It is the top view to which the coil 1 of FIG. 2 and its peripheral part were expanded. It is a figure explaining the structure of the part shown by FIG. 3 in the wiring board 3. FIG. It is a figure which shows the induced current which flows into the coil, when the magnetic core 1E is not provided in the inside of the coil. It is a figure which shows the induced current which flows into the coil 1, when the magnetic core 1E is provided in the inside of the coil 1. FIG. Is an enlarged plan view of the coil 1 and its periphery provided in the semiconductor module in the form status of implementation. It is a figure explaining the structure of the part shown in FIG. It is a figure which illustrates typically the structural example of the magnetic cores 1F1 and 1F2 shown in FIG. It is the top view to which the coil 1 with which the semiconductor module of another reference example is provided, and its peripheral part was expanded. It is a figure explaining the structure of the part shown in FIG.

Explanation of symbols

  1 coil, 1A, 1B conductor pattern, 1C through-hole electrode, 1E, 1F1, 1F2 magnetic core, 2 control circuit, 3 wiring board, 3A, 3B main surface, 11, 12 electrode, 13 resin case, 14 substrate, 14A insulation Body, 14B1, 14B2, 14C, 31 copper foil, 15 base part, 16 relay terminal, 20A-20C insulating layer, 21, 22 wiring pattern, 23, 24 ground electrode, 25 nut, 32 magnetic body, 100 semiconductor module, 101 AC motor, D1, D2 diode, Q1, Q2 IGBT element, T1-T3 terminals.

Claims (3)

A semiconductor element that outputs current;
An electrode having one end receiving the current and the other end from which the current is output;
A wiring board provided in the vicinity of the electrode and having a plate-like insulator;
A coil formed across the insulator,
The coil is
A plurality of first conductor patterns formed linearly on one surface located on the side closer to the electrode in the insulator;
A plurality of second conductor patterns formed linearly on the other surface located on the opposite side of the one surface in the insulator;
A plurality of through-hole electrodes that spirally connect the plurality of first conductor patterns and the plurality of second conductor patterns;
First and second wiring patterns formed inside the wiring board and electrically coupled to one end and the other end of the coil, respectively;
Is formed on the first major surface of the wiring substrate, when viewed in a direction toward the first main surface or found a second major surface of the wiring substrate, covering the first and second wiring patterns A first ground electrode that looks like:
When the formed on the second major surface of the wiring board positioned on the opposite side with respect to the first main surface, as viewed from the second major surface in a direction toward the first main surface, A second ground electrode that appears to cover the first and second wiring patterns ;
A magnetic core disposed inside the insulator so as to penetrate the inside of the coil ,
The insulator has a plurality of insulating layers;
The magnetic core includes a third conductor pattern formed between two adjacent insulating layers among the plurality of insulating layers . The third conductor pattern is:
Formed between two adjacent insulating layers among the plurality of insulating layers, and a core material made of copper;
The semiconductor module according to claim 1 , wherein the semiconductor module includes a magnetic material and a film provided on a surface of the core material.   Mounted on one of the first and second main surfaces, electrically coupled to the first and second wiring patterns, and measuring an induced current flowing in the coil by a magnetic field generated around the electrode The semiconductor module according to claim 1, further comprising a measurement circuit.

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