JP4730875B2 - 近接堆積方法とそのシステム - Google Patents

近接堆積方法とそのシステム Download PDF

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Publication number
JP4730875B2
JP4730875B2 JP2004188935A JP2004188935A JP4730875B2 JP 4730875 B2 JP4730875 B2 JP 4730875B2 JP 2004188935 A JP2004188935 A JP 2004188935A JP 2004188935 A JP2004188935 A JP 2004188935A JP 4730875 B2 JP4730875 B2 JP 4730875B2
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JP
Japan
Prior art keywords
target surface
workpiece
target
electron source
deposition
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2004188935A
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English (en)
Japanese (ja)
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JP2005015922A (ja
JP2005015922A5 (enExample
Inventor
クレイグ・マシュー・ヘンリー
リャン・ホン
ジェイソン・ハリソン・アルジャヴァク
アンリ・ルザック
ジョン・ノッティ
Original Assignee
エフ・イ−・アイ・カンパニー
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Publication of JP2005015922A5 publication Critical patent/JP2005015922A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using ion beam radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/047—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/487—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using electron radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3178—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for applying thin layers on objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/31—Processing objects on a macro-scale
    • H01J2237/3142—Ion plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31732—Depositing thin layers on selected microareas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31742—Etching microareas for repairing masks
    • H01J2237/31744—Etching microareas for repairing masks introducing gas in vicinity of workpiece

Landscapes

  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Toxicology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP2004188935A 2003-06-27 2004-06-25 近接堆積方法とそのシステム Expired - Fee Related JP4730875B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/607,814 2003-06-27
US10/607,814 US6926935B2 (en) 2003-06-27 2003-06-27 Proximity deposition

Publications (3)

Publication Number Publication Date
JP2005015922A JP2005015922A (ja) 2005-01-20
JP2005015922A5 JP2005015922A5 (enExample) 2007-08-30
JP4730875B2 true JP4730875B2 (ja) 2011-07-20

Family

ID=33418722

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004188935A Expired - Fee Related JP4730875B2 (ja) 2003-06-27 2004-06-25 近接堆積方法とそのシステム

Country Status (5)

Country Link
US (1) US6926935B2 (enExample)
EP (1) EP1491654B1 (enExample)
JP (1) JP4730875B2 (enExample)
DE (1) DE602004027446D1 (enExample)
TW (1) TWI373791B (enExample)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7511279B2 (en) 2003-10-16 2009-03-31 Alis Corporation Ion sources, systems and methods
US7554096B2 (en) 2003-10-16 2009-06-30 Alis Corporation Ion sources, systems and methods
US7554097B2 (en) 2003-10-16 2009-06-30 Alis Corporation Ion sources, systems and methods
US9159527B2 (en) 2003-10-16 2015-10-13 Carl Zeiss Microscopy, Llc Systems and methods for a gas field ionization source
US7557358B2 (en) 2003-10-16 2009-07-07 Alis Corporation Ion sources, systems and methods
US7518122B2 (en) 2003-10-16 2009-04-14 Alis Corporation Ion sources, systems and methods
US7511280B2 (en) 2003-10-16 2009-03-31 Alis Corporation Ion sources, systems and methods
US7601953B2 (en) 2006-03-20 2009-10-13 Alis Corporation Systems and methods for a gas field ion microscope
US7488952B2 (en) 2003-10-16 2009-02-10 Alis Corporation Ion sources, systems and methods
US7495232B2 (en) 2003-10-16 2009-02-24 Alis Corporation Ion sources, systems and methods
US7485873B2 (en) 2003-10-16 2009-02-03 Alis Corporation Ion sources, systems and methods
US7557360B2 (en) 2003-10-16 2009-07-07 Alis Corporation Ion sources, systems and methods
US7786451B2 (en) 2003-10-16 2010-08-31 Alis Corporation Ion sources, systems and methods
US7504639B2 (en) 2003-10-16 2009-03-17 Alis Corporation Ion sources, systems and methods
US7368727B2 (en) 2003-10-16 2008-05-06 Alis Technology Corporation Atomic level ion source and method of manufacture and operation
US7521693B2 (en) 2003-10-16 2009-04-21 Alis Corporation Ion sources, systems and methods
US7557359B2 (en) 2003-10-16 2009-07-07 Alis Corporation Ion sources, systems and methods
US8110814B2 (en) 2003-10-16 2012-02-07 Alis Corporation Ion sources, systems and methods
US7557361B2 (en) 2003-10-16 2009-07-07 Alis Corporation Ion sources, systems and methods
US7786452B2 (en) 2003-10-16 2010-08-31 Alis Corporation Ion sources, systems and methods
WO2007067296A2 (en) * 2005-12-02 2007-06-14 Alis Corporation Ion sources, systems and methods
JP5600371B2 (ja) * 2006-02-15 2014-10-01 エフ・イ−・アイ・カンパニー 荷電粒子ビーム処理のための保護層のスパッタリング・コーティング
US8835880B2 (en) * 2006-10-31 2014-09-16 Fei Company Charged particle-beam processing using a cluster source
JP2008171800A (ja) * 2006-10-31 2008-07-24 Fei Co 荷電粒子ビーム処理用保護層
US7804068B2 (en) 2006-11-15 2010-09-28 Alis Corporation Determining dopant information
JP5695818B2 (ja) * 2009-01-27 2015-04-08 株式会社日立ハイテクサイエンス 断面加工方法及び断面観察試料の製造方法
EP2341525B1 (en) 2009-12-30 2013-10-23 FEI Company Plasma source for charged particle beam system
US8642974B2 (en) 2009-12-30 2014-02-04 Fei Company Encapsulation of electrodes in solid media for use in conjunction with fluid high voltage isolation
US8987678B2 (en) 2009-12-30 2015-03-24 Fei Company Encapsulation of electrodes in solid media
EP2402475A1 (en) * 2010-06-30 2012-01-04 Fei Company Beam-induced deposition at cryogenic temperatures
US20130098871A1 (en) 2011-10-19 2013-04-25 Fei Company Internal Split Faraday Shield for an Inductively Coupled Plasma Source
EP2787523B1 (en) * 2013-04-03 2016-02-10 Fei Company Low energy ion milling or deposition
DE102013012225A1 (de) 2013-07-23 2015-01-29 Carl Zeiss Microscopy Gmbh Verfahren zur TEM-Lamellen-Herstellung und Anordnung für TEM-Lamellen-Schutzvorrichtung
WO2015175934A1 (en) * 2014-05-15 2015-11-19 Anthony John Mark Deposition and patterning using emitted electrons
EP3249676B1 (en) 2016-05-27 2018-10-03 FEI Company Dual-beam charged-particle microscope with in situ deposition functionality
JP6900027B2 (ja) * 2017-03-28 2021-07-07 株式会社日立ハイテクサイエンス 試料トレンチ埋込方法
US11817395B2 (en) * 2020-09-29 2023-11-14 Fei Company Depositive shielding for fiducial protection from redeposition

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54124879A (en) * 1978-03-22 1979-09-28 Nippon Telegr & Teleph Corp <Ntt> Ion beam deposition
JPH05159960A (ja) * 1991-12-09 1993-06-25 Hitachi Ltd 磁化膜の製造方法
US5429730A (en) * 1992-11-02 1995-07-04 Kabushiki Kaisha Toshiba Method of repairing defect of structure
JP3132938B2 (ja) * 1993-02-03 2001-02-05 セイコーインスツルメンツ株式会社 断面加工観察用荷電ビーム装置および加工方法
JP3041174B2 (ja) * 1993-10-28 2000-05-15 株式会社東芝 電子線描画装置のパターン修正装置におけるパターン修正方法
DE4340956C2 (de) * 1993-12-01 2002-08-22 Advantest Corp Verfahren und Vorrichtung zur Bearbeitung einer Probe
JP4137317B2 (ja) * 1999-10-07 2008-08-20 独立行政法人科学技術振興機構 微小立体構造物、その製造方法及びその製造装置
EP1210723B1 (en) * 2000-01-21 2009-03-18 Fei Company Shaped and low density focused ion beams
US7326445B2 (en) * 2000-11-29 2008-02-05 Sii Nanotechnology Inc. Method and apparatus for manufacturing ultra fine three-dimensional structure
WO2003012551A1 (en) * 2001-07-27 2003-02-13 Fei Company Electron beam processing

Also Published As

Publication number Publication date
US6926935B2 (en) 2005-08-09
JP2005015922A (ja) 2005-01-20
TWI373791B (en) 2012-10-01
DE602004027446D1 (de) 2010-07-15
EP1491654B1 (en) 2010-06-02
US20040261719A1 (en) 2004-12-30
EP1491654A1 (en) 2004-12-29
TW200509219A (en) 2005-03-01

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