JP4697014B2 - Semiconductor device manufacturing method and semiconductor manufacturing apparatus. - Google Patents

Description

The present invention relates to a method for manufacturing a semiconductor device and a semiconductor manufacturing apparatus that can be used for carrying out the method for manufacturing the semiconductor device.

  Conventionally, as described below, as a method of manufacturing a semiconductor device such as an FS (Field Stop) type IGBT, after manufacturing a device structure portion on the surface of a semiconductor wafer, the back surface of the wafer is ground and the back surface of the ground wafer is ground. There is a method for manufacturing a semiconductor device for manufacturing a device structure (see, for example, Patent Document 1). 11A to 11C show a manufacturing process of this semiconductor device.

  First, a semiconductor wafer 11 such as Si having a device structure 12 formed on the surface is prepared. The device structure part 12 means a part constituting the device structure. In the case of the FS type IGBT, the part constituting the MOS gate device structure such as a base region, an emitter region, a gate oxide film, a gate electrode and an interlayer insulating film. is there.

  Thereafter, as shown in FIG. 11A, a step of attaching a back grind tape 13 to the surface of the wafer 11 is performed. The back grind tape 13 is used for protecting the wafer surface and fixing the wafer 11 to the stage of the back grind apparatus.

  Subsequently, as shown in FIG. 11B, a back grinding process is performed. In this step, the back surface of the wafer 11 is shaved by grinding or etching so that the wafer 11 has a desired thickness.

  Then, as shown in FIG.11 (c), the process which peels a back grind tape is performed.

  Thereafter, although not shown, a process of etching the back surface of the wafer with a chemical solution to make a mirror surface is performed.

  Then, the process of forming a back surface side device structure part on the back surface of a wafer is performed. In the case of the FS type IGBT, the impurity regions of the field stop layer and the collector layer are the back side device structure part. At this time, for example, an impurity region is formed on the back surface of the wafer by ion-implanting conductive impurities into the back surface of the wafer and annealing. Thereafter, although detailed description is omitted, a semiconductor device such as an FS type IGBT is manufactured through a dicing process and the like.

In this manufacturing method, Si sludge (grinding waste) 14 is generated and adheres to the front surface side of the wafer during back grinding in FIG. 11B, but the back surface of the wafer 11 is backed up during back grinding. Since it is protected by the grind tape 13, Si sludge 14 adheres to the surface of the tape 13. Therefore, the Si sludge 14 adhering to the surface side of the wafer 11 can be removed by peeling the back grind tape 13 after back grinding.
JP 2004-140101 A

  As a specific method of the step of peeling the back grind tape in FIG. 11C, when the tape 13 is peeled off in the transport system for transporting wafers such as arms and belts after the back grind step in FIG. There is a method in which the wafer is transported to the stage to be used, and the tape 13 is pulled upward by pulling the tape 13 in a state where the back surface of the wafer is fixed on the stage, and transported to the next step by the transport system. Conceivable.

  However, in this case, since the back surface (grinding surface) of the wafer comes into direct contact with the stage and the transport system, particles such as Si sludge detached from the tape adhere to the back surface of the wafer, or scratches may be attached. The problem occurs.

  These particles and scratches cause pattern defects, impurity layer defects, and the like during subsequent fabrication of the back surface device structure. That is, for example, in the process of etching the back surface of the wafer after the tape peeling process, the scratches and particles are affected, the back surface is not finished flat, and the structure of the back diffusion layer after ion implantation and annealing is flat. Therefore, an electrical characteristic defect occurs. In particular, in annealing during the process of forming the device structure on the back surface of the wafer, annealing is performed at a low temperature (for example, 490 ° C. or less) or laser irradiation so as not to affect the surface device. In addition, since the diffusion of impurities is difficult to occur, the electrical characteristic defect becomes remarkable.

  In order to remove particles adhering to the back surface, it is conceivable to perform a step of cleaning the back surface of the wafer between the step of peeling the back grind tape and the step of etching the back surface of the wafer with a chemical solution. It is difficult to remove it only in a short time.

  Moreover, in the above-mentioned background art column, the case where the order of the process is the order of back grinding → tape peeling → back surface etching → ion implantation → annealing has been explained, but the order of the process is back grinding → back surface etching → tape peeling. The same problem occurs when changing to → ion implantation → annealing. This is because, even if the back surface is finished to a mirror surface by the back surface etching before the tape is peeled off, particles and scratches are formed in the next tape peeling process.

  In addition, the above-mentioned problem is not limited to the case where a tape is used to protect the surface of the wafer, and the protection member that protects the surface of the wafer can be used in the same manner when other types of protection members are used. It is a problem that arises.

  In view of the above points, the present invention provides a method for removing a protective member attached to the front surface of a wafer, so that the back surface of the semiconductor wafer is not directly brought into contact with a semiconductor manufacturing apparatus such as a transfer system or a stage, and is thus applied to the front surface of the wafer. It is an object of the present invention to provide a semiconductor device manufacturing method capable of removing the attached protective member and a semiconductor manufacturing device that can be used for carrying out the semiconductor device manufacturing method.

  In order to achieve the above object, a method of manufacturing a semiconductor device according to the present invention includes a support surface (1a) for supporting a semiconductor wafer in the step of removing the protection member, and the protection member (13) on the support surface (1a). The supporting means (1) on which the adhesive member (3) to be bonded is arranged is prepared, and the semiconductor wafer (11) is placed on the supporting surface (1a) with the surface side of the semiconductor wafer (11) facing down to protect it. The bonding member (3) is bonded to the protective member (13) while the bonding member (3) is bonded to the member (13), and the surface of the semiconductor wafer (11) is supported by the supporting means (1). The first feature is that the protective member (13) is peeled off by pulling downward from the surface of the wafer (11).

  Here, the “protective member” and the “adhesive member” may be in the form of a tape, a film, or the like.

  As described above, in the present invention, the protective member is peeled from the semiconductor wafer by pulling the adhesive member adhered to the protective member downward from the surface of the semiconductor wafer while supporting the surface of the semiconductor wafer by the supporting means. Therefore, the protective member can be peeled off without directly touching the support means on the back surface of the semiconductor wafer.

  In addition, since the semiconductor wafer is placed on the support surface with the surface side of the semiconductor wafer facing down, when transporting the semiconductor wafer, the surface of the semiconductor wafer is transported with the surface of the semiconductor wafer facing down. By supporting and transporting the semiconductor wafer, it is possible to prevent the back surface of the semiconductor wafer from directly touching the transport system.

  Therefore, according to the present invention, it is possible to prevent adhesion of particles and scratches due to direct contact of the transport system and support means with the back surface of the wafer.

  Regarding the first feature, in the step of removing the protective member (13), the adhesive member (3) is pulled in a direction in which the angle formed with the protective member (13) on the surface of the semiconductor wafer (11) becomes an obtuse angle. It is preferable. That is, it is preferable to pull the adhesive member obliquely downward with respect to the surface of the semiconductor wafer.

  Thereby, the deflection of the semiconductor wafer caused by pulling the adhesive member can be reduced as compared with the case of pulling in the vertical direction.

Further, in the first feature , in the step of removing the protective member (13), as the support means, the first support portion (1) on which the adhesive member (3) is disposed and the first support portion (1) The portion of the semiconductor wafer (11) where the protective member (13) is provided using the support means having the second support portion (2) spaced apart from the first support portion (1). The adhesive member (3) adhered to the protective member (13) while supporting the portion of the semiconductor wafer (11) from which the protective member (13) has been removed by the second support part (2). ), and is set to be pulled from between the first and second support portions (1, 2).

In the first feature , in the step of removing the protective member (13), the semiconductor wafer (11) is formed only by the first support portion (1) of the first and second support portions (1, 2). When the protective member (13) starts to be peeled off by pulling the adhesive member (3) while supporting the front end of the semiconductor wafer (11) bent downward by pulling the adhesive member (3) The second support part (2) is positioned between the part (11a) and the peeled protection member (13), and the second support part (2) protects the semiconductor wafer (11) ( after 13) supported the site that was peeled, until the whole becomes a flat position of the semiconductor wafer (11), and a moving second support portion (2).

  Further, regarding the first feature, when the adhesive member (3) is adhered to the protective member (13), the semiconductor wafer (11) is sucked from the opening (3a) provided in the adhesive member (3). It is preferable to adhere the adhesive member (3) to the protective member (13).

  Thereby, even if it does not touch the back surface of a semiconductor wafer, an adhesive member (3) can be adhered to a protection member (13).

  Regarding the first feature, in the step of forming the protective member (13), the protective member is made of a material that is cured by ultraviolet irradiation and weakens its adhesive force, and the back surface of the semiconductor wafer (11) is shaved. It is preferable to perform a step of weakening the adhesive force of the protective member to the semiconductor wafer before irradiation by irradiating the protective member (13) with ultraviolet rays between the step of removing the protective member (13).

Moreover, the semiconductor manufacturing apparatus of this invention has the 1st support surface (1a) which supports a semiconductor wafer (11), and is provided in the surface of a semiconductor wafer (11) on the 1st support surface (1a). A first support portion (1) on which an adhesive member (3) for adhering to the protective member (13) is disposed;
A second support part (2) having a second support surface (2a) which is disposed apart from the first support part (1) and supports the semiconductor wafer (11); and a first support part (1 ) And the second support portion (2), and a pulling means (4) for pulling the adhesive member (3).

  For example, the semiconductor device manufacturing method according to claim 1 can be implemented by using this semiconductor manufacturing device.

The first and second support portions may be integrated, and a stage or a transport system can be used as the second support portion. Also, the adhesive member is obliquely downward with respect to the semiconductor manufacturing apparatus. The first support portion (1) has an obtuse angle (1c) between the end surface (1b) at the position facing the second support portion (2) and the first support surface (1a). Preferably there is.

Moreover, in the semiconductor manufacturing apparatus of this invention , the 2nd support part (2) is provided with the movable means which can raise and lower the 2nd support surface (2a) .

Thereby, as shown in claim 1 , when the adhesive member (3) is pulled, the tip (11a) of the semiconductor wafer (11) bent downward and the peeled-off protective member (13) The second support part (2) is positioned therebetween, and the second support part (2) supports the part where the protective member (13) of the semiconductor wafer (11) is peeled off, and then the semiconductor wafer (11 ) Can be moved to a position where the entire area is flat.

  In addition, the code | symbol in the bracket | parenthesis of each means described in the claim and this column is an example which shows a corresponding relationship with the specific means as described in embodiment mentioned later.

(First embodiment)
The manufacturing method of the semiconductor device in the present embodiment includes the steps shown in FIGS. 11A to 11C as in the manufacturing steps described in the background art section, and is shown in FIG. A specific method for performing the step of peeling the back grind tape and a semiconductor manufacturing apparatus used for the method are characterized. Therefore, hereinafter, this process will be mainly described.

  1-3 show the details of the process of peeling the back grind tape in the present embodiment. In these drawings, (a) and (b) are a plan view and a side view, respectively, of a semiconductor manufacturing apparatus used in the step of peeling the back grind tape.

  First, referring to FIGS. 1 and 2, a semiconductor manufacturing apparatus used in the process of peeling back grinding tape will be described.

  As shown in FIGS. 1A and 1B, the semiconductor manufacturing apparatus mainly includes a main stage 1, a support stage 2, and a roller 4 that winds up a peel tape 3 disposed on the main stage 1. I have.

  As shown in FIGS. 2 (a) and 2 (b), the main stage 1 is a stage on which a wafer 11 with a back grind tape attached to the surface is mounted, and a support surface 1a for supporting the wafer, And an end face 1b located at the outer peripheral end of the main stage 1. The support surface 1a is flat, the end surface 1b on the support stage 2 side is an inclined surface, and an angle 1c formed with the support surface 1a is an obtuse angle. The end face 1b is inclined in this manner because the peel tape is pulled obliquely downward as will be described later.

  As shown in FIGS. 1A and 1B, a peel tape 3 is disposed on the support surface 1 a of the main stage 1. This peel tape 3 is a sheet-like adhesive member used for peeling off the back grind tape, and is adhered to the back grind tape. Since the peel tape 3 is wound around the roller 4, the peel tape 3 is made of a material and a thickness that can be wound around the roller 4. For example, the peel tape 3 may be a PET resin sheet coated with an adhesive. The adhesive strength of the peel tape 3 is required to be stronger than that of the back grind tape. For example, when the adhesive strength of the back grind tape is 1.5 N / 20 mm, the adhesive strength of the peel tape 3 is 17.6 N / 20 mm. To do.

  The peel tape 3 has a size that contacts at least the entire lower surface of the wafer 11 when the wafer 11 is placed on the peel tape 3. In this embodiment, as shown in FIG. 2A, the peel tape 3 extends in the direction pulled by the roller 4, and the width in the direction perpendicular to the pulled direction is slightly larger than the diameter of the wafer. , Protruding from the wafer 11.

  Further, as shown in FIG. 1 (a), the peel tape 3 has holes 3a at various places.

  Here, FIG. 4 shows a plan view of the main stage 1 in FIG. 1A in a state where no peel tape is arranged, and FIG. 5 shows a cross-sectional view taken along line AA in FIG.

  As shown in FIG. 4, the support surface 1a of the main stage 1 is also provided with a plurality of holes 1d. The plurality of holes 1d are suction ports, and the wafer on the main stage 1 is sucked from the holes 1d. A plurality of holes may be provided in the entire support surface 1a, but in this embodiment, for example, as shown by a broken line in the drawing, a region of the support surface 1a is formed in one wafer 11. It is arranged in the corresponding area.

  In addition, as shown in FIG. 5, the hole 3a of the peel tape 3 is set to have the same size of one hole and the interval between adjacent holes so as to coincide with the position of the hole 1d of the main stage 1. Has been. The hole 1d of the main stage 1 is connected to a vacuum pump as suction means (not shown). By operating this vacuum pump and evacuating, the wafer 11 is sucked through the hole 1 d of the main stage 1 and the hole 3 a of the peel tape 3.

  The support stage 2 is for supporting the wafer from which the back grind tape has been peeled off. As shown in FIGS. 1A and 1B, the support stage 2 has a flat support surface 2 a for supporting the wafer, and the end surface 2 b on the main stage 1 side is inclined along the end surface of the main stage 1. In order to pull the peel tape 3 from the main stage 1, the main tape 1 is separated from the main stage 1 at a predetermined interval.

  A roller 5 is provided at the tip 2c of the support stage 2 on the main stage 1 side. The roller 5 at the front end 2 c prevents the wafer flowing from the main stage from being caught on the front end 2 c of the support stage 2. Moreover, the support stage 2 can adjust the height of the support surface 2a by movable means such as an electric motor (not shown).

  The roller 4 pulls the peel tape 3. In this embodiment, the roller 4 pulls the peel tape 3 obliquely downward, so that the roller 4 is positioned on the extended line of the end surface 1 b of the main stage 1 as shown in FIG. is doing.

  Next, how to remove the back grind tape performed using the semiconductor manufacturing apparatus having the above-described structure will be described.

  First, as shown in FIGS. 1A and 1B, a semiconductor manufacturing apparatus is prepared, and the peel tape 3 is disposed on the support surface 1 a of the main stage 1. At this time, the position of the hole 3a of the peel tape 3 is adjusted to the position of the hole 1d of the main stage 1 (see FIG. 4).

  Subsequently, as shown in FIGS. 2 (a) and 2 (b), on the support surface 1a of the main stage 1, in a region (see FIG. 4) where a plurality of holes 1d are provided in the support surface 1a. Then, the wafer 11 is placed with the surface side on which the back grind tape 13 is stretched down. The back grind tape 13 covers the surface-side device structure 12 formed on the surface of the wafer 11. The back grind tape 13 is made of a material and a thickness capable of withstanding stress applied during back grinding, such as an EVA or PO resin sheet coated with an adhesive.

  Then, by operating the vacuum pump and sucking the wafer 11, the back grind tape 13 and the peel tape 3 are adhered, and then the operation of the vacuum pump is stopped. At this time, it is preferable to place a ring-shaped holding jig 6 on the wafer 11 and pressurize the outermost peripheral portion of the wafer before, during or after suctioning the wafer 11. Thereby, the adhesive force between the back grind tape 13 and the peel tape 3 in the outermost peripheral portion of the wafer 11 can be further strengthened. This is effective for facilitating the trigger when the back grind tape 13 is peeled off from the wafer 11. That is, when the back grind tape 13 is peeled off, the start of peeling is important. Even if the peel grind tape 13 is peeled off, if the peel tape 3 is peeled off from the back grind tape 13, the back grind tape 13 is removed from the wafer 1. Can not be peeled from. Therefore, this is effective. In addition, since the portion with which the holding jig 6 contacts is not an effective area as an IC chip in the wafer 11, there is little possibility of affecting the characteristic failure of the semiconductor element.

  Thus, according to the semiconductor manufacturing apparatus of the present embodiment, the back grind tape 13 can be adhered to the peel tape 3 without bringing the back surface of the wafer 1 into contact with the apparatus or the like. In the case where strong adhesion can be obtained only by sucking the wafer 11, the outermost peripheral portion of the wafer 11 does not need to be pressurized.

  Thereafter, the roller 4 is rotated and the peel tape 3 is wound around the roller 4 to start pulling the peel tape 3 obliquely downward. As a result, the wafer 11 moves rightward in the figure, and the surface of the wafer 11 is supported by the main stage 1 from the position where the right end of the wafer 11 exceeds the right end of the main stage 1. Thus, the peel tape 3 is pulled obliquely downward to the right in the drawing relative to the wafer surface, so that the back grind tape 13 begins to peel from the wafer 11.

  As shown in FIG. 3, the surface of the wafer 11 from which the back grind tape 13 has been peeled is placed on the support stage 2, and the back grind tape 13 is peeled off while the wafer 11 moves to the right side in the figure. Go. At this time, the main stage 11 supports the region where the back grind tape 13 of the wafer 11 is stretched, and the support stage 2 supports the region where the back grind tape 13 of the wafer 11 is peeled off. is doing.

Here, FIGS. 6A and 6B show a state when the back grind tape 13 is starting to be peeled off. When the back grind tape 13 begins to peel from the wafer 11, if the wafer 11 is as thin as about 150 μm, the end surface 11 a of the wafer 11 is deformed (bent) and comes into contact with the tip corner 2 c of the support stage 2. May crack.
Therefore, as shown in FIG. 6A, in consideration of the deflection of the wafer 11 at the timing when the back grind tape 13 starts to be peeled, the support stage 2 is separated from the wafer 11 between the back grind tape 13 and the back grind tape 13. The support surface 2a of the support stage 2 is positioned lower than the support surface 1a of the main stage 1 so as to be positioned.

  Then, as shown in FIG. 6B, when the end surface 11a of the wafer 11 comes on the support stage 2, the support surface 2a of the support stage 2 is gradually raised so as to keep the entire area of the wafer 11 flat. . Thereby, the said problem can be solved.

  Thereafter, although not shown, when the entire area of the wafer 11 is positioned on the support stage, the step of peeling the back grind tape is completed. Thereafter, the wafer 11 is transferred to the next step. At this time, a transport system such as an arm or a belt supports the surface side of the wafer 11. Subsequently, as described in the background art section above, a process of etching the back surface of the wafer, a process of forming a back side device structure portion by performing ion implantation or the like on the back surface of the wafer, and then a dicing process are performed. Etc., a semiconductor device such as an FS type IGBT is manufactured.

  As described above, according to the method of the present embodiment, the back grind tape 13 attached to the surface of the wafer 11 without directly contacting the back surface of the wafer 11 with a semiconductor manufacturing apparatus such as a transfer system or a stage. Can be removed.

In this embodiment, the wafer 11 immediately after the back grind tape 13 is peeled off is supported by the support stage 2. Thereby, it is possible to prevent a thin wafer having a wafer thickness of about 150 μm from cracking. In the present embodiment, the wafer is pulled not in a direction perpendicular to the surface of the wafer 11 but obliquely downward. That is, the peel tape 3 is pulled in a direction in which the angle formed with the back grind tape 13 attached to the surface of the wafer 11 becomes an obtuse angle.

  FIG. 7 shows the state of the wafer 11 when the peel tape 3 is pulled in a direction perpendicular to the wafer 11, unlike the present embodiment. As shown in FIG. 7, when the peel tape 3 is pulled in a direction perpendicular to the wafer 11, the thinner the wafer is, the larger the amount of deflection becomes. On the other hand, as in this embodiment, by pulling the peel tape 3 obliquely downward, the amount of deflection can be reduced and the wafer can be prevented from cracking. If the wafer is not cracked, the peel tape 3 may be pulled in a direction perpendicular to the wafer 11. In this case, an angle 1c formed by the end surface 1b of the main stage 1 and the support surface 1a is a right angle.

  In the present embodiment, the support stage 2 comes into contact with the surface of the wafer 11 from which the back grind tape 13 has been peeled off. However, since the device structure 12 has been completely formed on the surface side of the wafer 11, The adhesion of particles to the surface of the wafer 11 due to the contact of the surface of the wafer 11 is not particularly problematic. Also, there is no particular problem when a protective film is formed on the surface of the wafer 1, but when the protective film is not formed, the back grind tape 13 is pasted after the device structure 12 is formed. By forming a protective film for protecting the device structure 12 in advance, adhesion of particles to the device structure 12 can be prevented. This protective film is removed after ion implantation.

(Second Embodiment)
In the present embodiment, a process for facilitating the peeling of the back grind tape is added to the first embodiment. That is, in this embodiment, the adhesive strength of the back grinding tape between the back grinding process shown in FIG. 11B and the process of peeling the back grinding tape shown in FIG. 11C described in the first embodiment. The process of weakening is performed. Here, FIGS. 8 and 9 show a process of weakening the adhesive strength of the back grind tape.

  First, in the present embodiment, in the step of attaching the back grind tape shown in FIG. 11A, the adhesive strength is weakened due to, for example, the adhesive component being cured by irradiation with ultraviolet rays as the back grind tape 13. A so-called UV tape is used.

  Then, in the step of weakening the adhesive strength of the back grind tape, as shown in FIG. 8A, the portion 7a holding the wafer 11 is shown in FIG. 8B using the arc-shaped first arm 7. As described above, the back grind tape on the surface of the wafer 11 is irradiated with ultraviolet rays (UV) from the lower side of the wafer 11 while holding the outer peripheral portion of the wafer 11 with the front side facing down. At this time, since the outer peripheral portion of the wafer 11 is covered with the first arm 7, ultraviolet rays are not irradiated.

  Therefore, in order to irradiate the portion of the wafer 11 covered with the first arm 7 with ultraviolet rays, as shown in FIG. 9A, the portion 8a for holding the wafer is a second arm 8 having a linear shape. As shown in FIG. 9B, ultraviolet rays (UV) are applied from the lower side of the wafer 11 to the back grind tape on the surface of the wafer 11 with the front side facing down and the center portion of the wafer 11 held. ).

  In this way, the adhesive strength of the back grind tape can be weakened by irradiating with ultraviolet rays in two stages. Thus, the back grind tape can be easily peeled in the step of peeling the back grind tape shown in FIG.

  Further, in this embodiment, since the first and second arms 7 and 8 having different shapes of the portion for holding the wafer are used to hold different portions of the surface of the wafer 11, the back surface of the wafer 11 is used. Can be irradiated with ultraviolet rays without contacting the arm.

(Third embodiment)
Unlike the first and second embodiments, the present embodiment differs from the manufacturing process described in the section of the background art in the back grinding process shown in FIG. 11 (b) and the back grinding tape shown in FIG. 11 (c). The process of attaching the protective tape which protects the back surface of a wafer on the back surface of a wafer, etc. between the process of peeling is added. Here, FIGS. 10A to 10E show a manufacturing process of the semiconductor device of this embodiment.

  Specifically, in the step shown in FIG. 10A, as in the step shown in FIG. 11A, a wafer 11 having a surface-side device structure 12 that forms a semiconductor element formed on the surface is prepared. A back grind tape 13 is formed as a first protective member that covers the surface of the wafer 11 and protects the surface.

  Subsequently, in the step shown in FIG. 10B, back grinding is performed as shown in FIG.

  In the step shown in FIG. 10C, a protective tape 15 as a second protective member for protecting the back surface of the wafer 11 is affixed to the back surface of the ground wafer 11. The protective tape 15 may be an EVA or PO resin sheet coated with an adhesive. Instead of the protective tape 15, other protective members such as a resist may be used.

  Subsequently, in the step shown in FIG. 10D, the back grind tape 13 is peeled off with the back surface of the wafer 11 covered with the protective tape 15. Specifically, the back grind tape 13 is peeled from the wafer 11 by pulling the back grind tape 13 upward while the wafer is fixed on the support means for supporting the wafer.

  Subsequently, in the step shown in FIG. 10E, the protective tape 15 is removed from the wafer 11. At this time, the wafer in the figure is turned upside down, and the protective tape 15 is peeled off with the surface of the wafer 11 fixed on the support means for supporting the wafer. For this reason, the surface of the wafer 11 is in direct contact with the support means, but since the fabrication of the device is finished, the adhesion of particles due to the surface of the wafer 11 being in direct contact with the support means is particularly problematic. Don't be. Similarly, when the protective film is formed on the surface of the wafer 1, there is no problem, and when the protective film is not formed on the surface of the wafer 1, the device structure 12 is formed and the back surface is formed. By attaching a protective film that protects the device structure 12 before applying the grind tape 13, adhesion of particles to the device structure 12 can be prevented. This protective film is removed after ion implantation.

  In this manner, by peeling the back grind tape 13 in a state where the protective tape 15 is stretched on the surface of the wafer 11, it is possible to prevent the back surface of the wafer 11 from coming into direct contact with the stage or the transport system.

(Other embodiments)
(1) In the first embodiment, the case where the support stage 2 is used as the second support portion has been described as an example. However, instead of the support stage 2, a transport system such as a belt can be used. Even in this case, it is preferable to receive the wafer by the surface.

  (2) In the first embodiment, the sheet-like peel tape 3 is used as the adhesive member. However, as long as the adhesive member can be adhered to the back grind tape 13, the shape of the adhesive member is not particularly limited, and various materials and shapes can be used. Can be used.

  (3) In each of the above-described embodiments, the case where the order of the steps is the order of back grinding → back grinding tape peeling → back surface etching → ion implantation has been described. Grinding → back surface etching → tape peeling → ion implantation may be used.

  (4) In each of the above-described embodiments, the case where the back grind tape 13 is used as the first protective member has been described as an example. However, the embodiment is not limited to the tape shape, and any protective member that protects the surface of the wafer. Other shape protective members may be used.

(A) is a top view of the semiconductor manufacturing apparatus in 1st Embodiment of this invention, (b) is the side view which looked at the semiconductor manufacturing apparatus in (a) from the lower side in the figure. It is a figure which shows the process of peeling a back grind tape, (a) is a top view of the semiconductor manufacturing apparatus in 1st Embodiment of this invention, (b) is a semiconductor manufacturing apparatus in (a) lower side in a figure It is the side view seen from. It is a figure which shows the process of peeling the back grinding tape following FIG. 2, (a) is a top view of the semiconductor manufacturing apparatus in 1st Embodiment of this invention, (b) is the semiconductor manufacturing apparatus in (a). It is the side view seen from the lower side in the figure. It is a top view of the main stage 1 in Fig.1 (a) in the state where the peel tape is not arrange | positioned. It is the sectional view on the AA line in Fig.2 (a). It is a side view of the semiconductor manufacturing apparatus when the back grind tape 13 is starting to be peeled off. It is a figure which shows the state of a wafer when the peel tape 3 is pulled in the direction perpendicular | vertical with respect to the wafer surface. It is a perspective view which shows the process of weakening the adhesive force of the back grind tape in 2nd Embodiment of this invention. It is a perspective view which shows the process of weakening the adhesive force of the back grind tape following FIG. It is sectional drawing of the semiconductor device which shows the manufacturing process of the semiconductor device in 3rd Embodiment of this invention. It is sectional drawing of the semiconductor device which shows the manufacturing process of the semiconductor device in the past and this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Main stage, 1a ... Support surface, 2 ... Support stage, 2a ... Support surface,
3 ... peel tape, 4 ... roller, 6 ... holding jig,
11 ... wafer, 12 ... surface side device structure,
13 ... Back grind tape, 15 ... Protective tape.

Claims (7)

Preparing a semiconductor wafer (11) having a surface-side device structure (12) constituting a semiconductor element formed on the surface;
Forming a protective member (13) that covers the surface of the semiconductor wafer (11) and protects the surface;
Cutting the back surface of the semiconductor wafer (11) in a state where the front surface is covered with the protective member (13);
And after removing the back surface of the semiconductor wafer (11), removing the protective member (13) from the semiconductor wafer (11),
In the step of removing the protective member, a support surface (1a) that supports the semiconductor wafer is provided, and an adhesive member (3) that is bonded to the protective member (13) is disposed on the support surface (1a). Prepare means (1),
The semiconductor wafer (11) is placed on the support surface (1a) with the surface side of the semiconductor wafer (11) facing down, and the adhesive member (3) is adhered to the protective member (13),
While supporting the surface of the semiconductor wafer (11) with the support means (1), the adhesive member (3) adhered to the protective member (13) is lower than the surface of the semiconductor wafer (11). by pulling a method for manufacturing a semi-conductor device to peel the protective member (13),
In the step of removing the protective member (13),
As the support means, a first support portion (1) on which the adhesive member (3) is disposed and a second support portion (2) spaced from the first support portion (1) are provided. Using the support means,
A portion of the semiconductor wafer (11) where the protection member (13) is provided is supported by the first support portion (1), and the semiconductor wafer (11) is supported by the second support portion (2). ) Of the adhesive member (3) adhered to the protective member (13) while supporting the portion from which the protective member (13) has been removed. 2)
By pulling the adhesive member (3) while supporting the semiconductor wafer (11) only by the first support portion (1) of the first and second support portions (1, 2), When starting to peel off the protective member (13),
The second support is provided between the tip (11a) of the semiconductor wafer (11) bent downward by pulling the adhesive member (3) and the protective member (13) peeled off. After positioning the part (2) and supporting the part where the protective member (13) of the semiconductor wafer (11) is peeled off by the second support part (2), the entire area of the semiconductor wafer (11) A method for manufacturing a semiconductor device, characterized in that the second support portion (2) is moved to a position where the surface becomes flat.   In the step of removing the protective member (13), the adhesive member (3) is pulled in a direction in which an angle between the surface of the semiconductor wafer (11) and the protective member (13) is an obtuse angle. A method for manufacturing a semiconductor device according to claim 1. When adhering the adhesive member (3) to the protective member (13), the protective member (11) is sucked from the opening (3a) provided in the adhesive member (3). the method of manufacturing a semiconductor device according to claim 1 or 2, wherein said to adhere the adhesive member (3) to 13). In the step of forming the protective member (13), the protective member is made of a material that is cured by ultraviolet irradiation and weakens its adhesive force.
By irradiating the protective member (13) with ultraviolet rays between the step of scraping the back surface of the semiconductor wafer (11) and the step of removing the protective member (13), the semiconductor wafer of the protective member the method of manufacturing a semiconductor device according to any one of 3 claims 1, characterized in that a step of weakening than before irradiation adhesion to. It has a first support surface (1a) for supporting the semiconductor wafer (11), and is bonded to a protective member (13) provided on the surface of the semiconductor wafer (11) on the first support surface (1a). A first support part (1) on which an adhesive member (3) is disposed;
A second support part (2) which is disposed apart from the first support part (1) and has a second support surface (2a) for supporting the semiconductor wafer (11);
A tension means (4) for pulling the adhesive member (3) from between the first support portion (1) and the second support portion (2) ;
Said second supporting portion (2) is a semiconductor manufacturing apparatus according to claim Rukoto a movable means capable of lowering and raising the second support surface (2a). The first support portion (1) has an obtuse angle (1c) between the end surface (1b) at a position facing the second support portion (2) and the first support surface (1a). The semiconductor manufacturing apparatus according to claim 5 . The first support surface (1a) and the adhesive member (3) are provided with suction openings (1d, 3a),
By adsorbing the semiconductor wafer (11) placed on the first support surface (1a) from the suction opening (1d, 3a), the adhesive member (3) and the protective member (13) are bonded. The semiconductor manufacturing apparatus according to claim 5, further comprising suction means for causing the semiconductor device to suck.

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