JP4689150B2 - 半導体回路及びその作製方法 - Google Patents

半導体回路及びその作製方法 Download PDF

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Publication number
JP4689150B2
JP4689150B2 JP2003082139A JP2003082139A JP4689150B2 JP 4689150 B2 JP4689150 B2 JP 4689150B2 JP 2003082139 A JP2003082139 A JP 2003082139A JP 2003082139 A JP2003082139 A JP 2003082139A JP 4689150 B2 JP4689150 B2 JP 4689150B2
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Japan
Prior art keywords
thin film
channel formation
formation region
film
film transistor
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Expired - Fee Related
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JP2003082139A
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Japanese (ja)
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JP2004006741A5 (enExample
JP2004006741A (ja
Inventor
清 加藤
知昭 熱海
敦生 磯部
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2003082139A priority Critical patent/JP4689150B2/ja
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Publication of JP2004006741A5 publication Critical patent/JP2004006741A5/ja
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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2003082139A 2002-03-26 2003-03-25 半導体回路及びその作製方法 Expired - Fee Related JP4689150B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003082139A JP4689150B2 (ja) 2002-03-26 2003-03-25 半導体回路及びその作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002087208 2002-03-26
JP2002087208 2002-03-26
JP2003082139A JP4689150B2 (ja) 2002-03-26 2003-03-25 半導体回路及びその作製方法

Publications (3)

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JP2004006741A JP2004006741A (ja) 2004-01-08
JP2004006741A5 JP2004006741A5 (enExample) 2006-05-11
JP4689150B2 true JP4689150B2 (ja) 2011-05-25

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JP2003082139A Expired - Fee Related JP4689150B2 (ja) 2002-03-26 2003-03-25 半導体回路及びその作製方法

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JP (1) JP4689150B2 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4743393B2 (ja) * 2005-06-27 2011-08-10 セイコーエプソン株式会社 液体噴射ヘッド及び液体噴射装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59184517A (ja) * 1983-04-05 1984-10-19 Agency Of Ind Science & Technol 積層型半導体装置の製造方法
JP3645387B2 (ja) * 1996-12-30 2005-05-11 株式会社半導体エネルギー研究所 半導体回路
JPH10200114A (ja) * 1996-12-30 1998-07-31 Semiconductor Energy Lab Co Ltd 薄膜回路
JP2000068520A (ja) * 1997-12-17 2000-03-03 Matsushita Electric Ind Co Ltd 半導体薄膜、その製造方法、および製造装置、ならびに半導体素子、およびその製造方法

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JP2004006741A (ja) 2004-01-08

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