JP4665276B2 - Solid-state imaging device and driving method thereof - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
  The present invention relates to a solid-state imaging device using, for example, a linear sensor and a driving method thereof.
[0002]
[Prior art]
  For example, a pixel shift type CCD linear sensor 1 as shown in FIG. 15A has been developed as a linear sensor. The CCD linear sensor 1 has a first sensor array (so-called main sensor array) 3 and a second sensor array (so-called sub sensor array) 4 in which a plurality of sensor units 2 serving as pixels are arranged in one direction. A first transfer register (so-called main transfer register) 7 and a second transfer register (so-called “so-called main transfer register”) having a CCD structure of, for example, two-phase driving are provided on one side of the respective sensor rows 3 and 4 via read gate portions 5 and 6. Sub-transfer register) 8 is provided.
[0003]
  The two sensor rows 3 and 4 are formed so as to be shifted from each other by a half pitch, and as shown in FIG. 15B, an interval X between the sensor rows 3 and 4 is formed.₁The pixel pitch X₂Integer multiple (X₁= NX₂)
Is done. The purpose is to increase MTF (Modulation Transfer Function).
[0004]
  The first and second transfer registers 7 and 8 are connected to a common transfer register unit 9 having a CCD structure so as to be coupled on the output unit side, and adjacent to the final stage of the common transfer register unit 9, an output gate is connected. For example, a floating diffusion region 11 to be a charge voltage conversion unit is formed, and a reset gate unit 12 and a reset drain 13 are formed so as to be adjacent to the floating diffusion region 11. An output circuit 14 is connected to the floating diffusion region 11.
[0005]
  In the CCD linear sensor 1, when the highest resolution is required, the signal charges of the first sensor array (main sensor array) 3 and the second sensor array (sub sensor array) 4 are transferred to the transfer registers 7 and 8, respectively. To transfer the signals in the transfer registers 7 and 8 and alternately output the signals of the first sensor row 3 and the second sensor row 4 through the common transfer register portion 9, the floating diffusion region 11 and the output circuit 14, The signal processing unit corrects the time difference between the positions of the sensor unit 2 of the first sensor array 3 and the sensor unit 2 of the second sensor array 4 to create an image.
[0006]
  On the other hand, when the resolution of 1/2 is sufficient as an image, the signal charges of the second sensor array 4 are not necessary, and only the signal charges of the first sensor array are processed and output. In this case, unnecessary signal charges in the second sensor array 4 are swept away by the reset drain 14 through the floating diffusion region 11 and the reset gate portion 12.
[0007]
  FIG. 16 shows another example of a CCD linear sensor 16 having a sensor array layout different from that of FIG. Similar to the above example, the CCD linear sensor 16 includes a first sensor row (so-called main sensor row) 3 and a second sensor row (so-called sub-sensor) in which a plurality of sensor units 2 serving as pixels are arranged in one direction. Column) 4, and a first transfer register (so-called main transfer register) 7 and a second transfer circuit having a CCD structure, for example, of two-phase drive via readout gate portions 5 and 6 on one side of the respective sensor columns 3 and 4. Two transfer registers (so-called sub-transfer registers) 8 are provided.
[0008]
  In the CCD linear sensor 16, the sensor rows 3 and 4 are arranged on the same side with respect to the transfer registers 7 and 8. Further, in each of the sensor arrays 3 and 4, each sensor unit 2 (S that generates a signal charge that is an original image signal).₁~ S_n), Sensor unit 2 (S₁′ 〜S_nBefore and after ′), the dummy sensor unit 2 (D for obtaining the black reference level of the output signal)₁~ D_n) And 2 (D_{n + 1}~ D_m), Dummy sensor part 2 (D₁'~ D_n′) And 2 (D_{n + 1}'~ D_m′) Are arranged. This dummy sensor part (D₁~ D_n), (D₁'+ D_n′) And (D_{n + 1}~ D_m), (D_{n + 1}'~ D_mThe upper surface of ′) is covered with a light shielding film. The dummy sensor section is also provided in the sensor rows 3 and 4 in FIG.
[0009]
  Further, as described with reference to FIG. 15, the first and second transfer registers 7 and 8 are connected to the common transfer register unit 9 having a CCD structure so as to be coupled on the output unit side. 9, for example, a floating / diffusion region 11 to be an output gate unit 10 and a charge-voltage conversion unit is formed, and a reset gate unit 12 and a reset drain 13 are formed to be adjacent to the floating diffusion region 11. The An output circuit 14 is connected to the floating diffusion region 11.
[0010]
  The driving of the CCD linear sensor 16 is the same as that of the CCD linear sensor 15 of FIG. 15 described above. When high resolution is required, the first sensor array (main sensor array) 3 and the second sensor array ( When the signal charge of the sub sensor array 4 is read and signal processing is performed to create a high-resolution image, and the resolution is not required, the signal charge of the first sensor array is not required because the signal charge of the second sensor array 4 is unnecessary. Only the signal is processed and output.
[0011]
[Problems to be solved by the invention]
  By the way, in the CCD linear sensors 1 and 16 described above, when the signal charges of only the first sensor array (main sensor array) 3 are output, the signal charges generated in the second sensor array (sub sensor array) 4 are output. In order to sweep away to the reset drain 13, it is necessary to transfer it to the floating diffusion region 11 once. Therefore, the signal of the first sensor array 3 may be influenced by the unnecessary signal of the second sensor array 4. .
[0012]
  This is because the signal of the first sensor array 3 and the signal of the second sensor array 4 are alternately output, and thus receives coupling in the output buffer section (so-called output circuit section 14). In particular, when the second sensor array 4 that is spatially separated changes from black to white even though the first sensor array 3 is black, the signal of the first sensor array 3 slightly changes.
[0013]
  Further, when reading at a high speed that does not require resolution, it is necessary to increase the frequency of the transfer clock pulse, which makes it difficult to perform external signal processing, for example, by shortening the data area.
[0014]
  Also in a CCD linear sensor that has a plurality of CCD transfer registers for one sensor column and distributes signal charges of each pixel (sensor unit) of the sensor column to a plurality of transfer registers and reads the pixels, When only the signal charge of a required pixel is read out by thinning, the signal charge of the selected pixel is affected by the signal charges of other pixels.
[0015]
  On the other hand, in a CCD linear sensor having a plurality of sensor arrays, such as a color CCD linear sensor, a read mode in which only signal charges of a required sensor array are selected and read out in addition to reading of signal charges of all sensor arrays. In the case of providing, it is desirable that the signal charges of the non-selected sensor array or the charges of the smear component can be easily swept away.
[0016]
  In the present invention, in view of the above points, when a plurality of transfer registers are selected and a signal of a required sensor array or sensor unit is read, the selected signal charges are not affected by unnecessary charges in the non-selected transfer registers. Or unnecessary charge can be swept away without difficulty, or high-speed readout is possible when resolution is not required.TA body imaging apparatus and a driving method thereof are provided.
[0017]
[Means for Solving the Problems]
  The solid-state imaging device according to the present invention distributes signal charges of one or a plurality of sensor rows and a plurality of sensor units in one sensor row provided for one sensor row to an odd number and an even number. Two transfer registers to transfer,A common charge-voltage converter to which signal charges from the two transfer registers are transferred;A charge sweeping means is provided in the transfer register that is not selected in accordance with the read mode, and the signal charge of the transfer register that is not selected is swept away by the charge sweeping means.
[0018]
  In the solid-state imaging device of the present invention, for one sensor rowTwoA transfer register is provided, in the sensor arraypluralThe signal charge of the sensorDistribute into odd and even twoTransfer registerSwitch toBecause it is sentOdd or evenThe signal charge of the sensor unit can be selected and read as necessary. Charge transfer sweeping means is provided in the transfer register that is not selected.signalThe charges are not transferred to the charge voltage conversion unit, but are swept away via the charge sweeping means. Therefore, the selected signal charge isUnnecessary signalUnaffected by charge.
  Odd or evenWhen reading only the signal charge of the sensor unit, it is possible to read at a higher speed if the drive frequency is the same as in the read mode of all the sensor units, and if the read time is the same, the drive frequency is reduced. External signal processing becomes easy.
[0019]
  The solid-state imaging device driving method according to the present invention includes one or a plurality of sensor rows and two transfer registers provided for the one sensor row.And a common charge-voltage converter to which signal charges from the two transfer registers are transferredThe signal charges of a plurality of sensor units in one sensor array are divided into odd and even numbers and transferred to two transfer registers, and the signal charges transferred to the transfer registers that are not selected according to the read mode are The charge sweeping means provided in the transfer register is swept away.
[0020]
  In the driving method of the solid-state imaging device of the present invention,Odd or evenWhen the signal charge of the sensor unit is selectively read, the unnecessary signal charge of the non-selected transfer register is not transferred to the charge-voltage conversion unit, but is swept away, so that the selected signal charge is influenced by the unnecessary signal charge. Not receive.
  Odd or evenWhen reading only the signal charge of the sensor unit of the sensor unit, compared to the reading mode of all the sensor units, if the driving frequency is the same, high-speed reading is possible, and if the reading time is the same, the driving frequency is reduced. Facilitates external signal processing.
[0021]
  The solid-state imaging device according to the present invention is provided with a plurality of sensor rows, a plurality of transfer registers provided corresponding to each sensor row via a read gate unit, and adjacent to each sensor row or a predetermined sensor row. Selected charge sweeping means, selection means for selecting charge sweeping means for the non-selected sensor array, and means for selecting and turning off the read gate portion of the non-selected sensor array,A charge-voltage converter that transfers signal charges from a plurality of transfer registers; andAnd the signal charge of the non-selected sensor array is not read to the transfer register but is swept to the charge sweeping means when reading the signal charge of the required sensor array.
[0022]
  In the solid-state imaging device of the present invention, when reading the signal charges of a required sensor row, the charge sweeping means of the non-selected sensor row is selected to be in the charge sweeping state, and the read gate of the non-selected sensor row Part is selected and turned off. As a result, the signal charge of the non-selected sensor array is not read out to the transfer register, but is swept away by the charge sweeping means. Therefore, the signal of the selected sensor array can be read at high speed without being affected by the signal of the non-selected sensor array.
  When reading out only the signal charges of a required sensor array, it is possible to read out at a higher speed if the drive frequency is the same as in the read mode of all sensor arrays, and the drive frequency is reduced if the readout time is the same. Therefore, external signal processing becomes easy.
[0023]
  A method for driving a solid-state imaging device according to the present invention includes:A plurality of sensor rows, a plurality of transfer registers provided via the readout gate corresponding to each sensor row, a charge sweeping means provided adjacent to each sensor row or a predetermined sensor row, and a plurality of And a common charge-voltage conversion unit to which signal charges from the transfer registers are transferred, and a plurality of transfer registers are selected to read out the signal charges of a required sensor array. The charge sweeping means provided adjacent to the sensor column is selected, the read gate unit corresponding to the non-selected sensor column is turned off, and the non-selected signal charges are swept away by the charge sweeping unit.
[0024]
  In the driving method of the solid-state imaging device of the present invention, when a plurality of transfer registers are selected and the signal charges of a required sensor array are selectively read, unnecessary signal charges of the non-selected transfer registers are transferred to the charge-voltage converter. Since it is not transferred and is swept away, the selected signal charge is not affected by unnecessary signal charge.
  When reading out only the signal charges of the required sensor array, compared to the reading mode of all the sensor units, if the driving frequency is the same, high-speed reading is possible, and if the reading time is the same, the driving frequency is reduced. Facilitates external signal processing.
[0025]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
[0026]
  Prior to the description of the present invention, a reference example of a CCD linear sensor applied to a solid-state imaging device will be described. FIG. 1 shows a first reference example.
[0027]
  The CCD linear sensor 21 according to this reference example is a pixel shift type CCD linear sensor, and a first sensor array 23 and a sub sensor array which are main sensor arrays in which a plurality of sensor units 22 each serving as a pixel are arranged in one direction. A first CCD transfer register having a second sensor array 24 serving as a sensor array, and serving as, for example, a main transfer register for two-phase driving via a read gate unit 25 and 26 on one side of each sensor array 23 and 24 27 and a second CCD transfer register 28 serving as a sub-transfer register.
[0028]
  The two sensor rows 23 and 24 are formed so as to be shifted from each other by a half pitch, and as shown in FIG._ThreeThe pixel pitch X_FourAn integer multiple of X (thus X_Three= NX_Four).
[0029]
  The first and second CCD transfer registers 27 and 28 are connected to the common CCD transfer register unit 29 so as to be coupled on the output unit side, adjacent to the final stage of the common CCD transfer unit register unit 29, An output gate portion 30 to which a predetermined fixed potential (for example, ground potential) is applied, and a floating diffusion region or a floating gate portion serving as a charge-voltage converter, for example, a floating diffusion region 31 in this example are formed. Further, a reset gate portion 32 and a reset drain 33 are formed so as to be adjacent to the floating diffusion region 31. An output circuit 34 is connected to the floating diffusion region 31.
[0030]
  AndThis reference exampleIn particular, the second CCD transfer register 28 is close to the end of the second CCD transfer register 28, that is, for example, in contact with the transfer unit of the portion forming the bent transfer path close to the common CCD transfer register unit 29 side. Charge sweeping means 36 is provided for sweeping signal charges read from the sensor array 24 to the second CCD transfer register before transferring them to the floating diffusion region 31.
[0031]
  FIG. 2 shows an example of the main part of the CCD transfer register of the CCD linear sensor 21, that is, a part where the first and second transfer registers 27 and 28 are multiplexed. As shown in FIG. 2, the first CCD transfer register 27 has a two-phase drive pulse (clock pulse) φ.₁And φ₂Are sequentially arranged, for example, the driving pulse φ at the final stage₁Is formed such that the transfer unit 41a to which the voltage is applied is connected to the common CCD transfer register unit 29. Similarly, the second CCD transfer register 28 has a two-phase drive pulse φ₁And φ₂Are sequentially arranged, and an independent drive pulse (clock pulse) φ is provided at the final stage._2LThe transfer unit 42C to which is applied is arranged, and the transfer unit 42C is formed to be connected to the common CCD transfer register unit 29.
[0032]
  In the common CCD transfer register unit 29, a two-phase drive pulse (clock pulse) φ_ThreeAnd φ_FourThe transfer units 43a and 43b to which is applied are arranged. In this example, the drive pulse φ_ThreeIs applied to the drive pulse φ of the first and second CCD transfer registers 27 and 28.₁And φ_2LAre connected to the final-stage transfer units 41 a and 42 c, and the final-stage transfer unit 43 b is connected to the output gate unit 30 adjacent to the floating diffusion region 31.
[0033]
  A transfer unit corresponding to a so-called constriction portion, which is connected to the common CCD transfer register unit 29 of the second CCD transfer register 28, in this example, a drive pulse φ₁The charge sweeping means 36 is formed adjacent to the transfer section 42a to which is applied. In the embodiment of FIG. 2, the charge sweeping means 36 is constituted by a charge sweeping means 361 comprising an overflow gate portion 45 and an overflow drain 46 to which a predetermined solid potential is applied.
[0034]
  Next, the operation of the CCD linear sensor 21 according to this reference example will be described. In the highest resolution mode, the first CCD transfer register 27 and the second CCD transfer register 28 are used to change the first sensor row 23 as the main sensor row and the second sensor row 24 as the sub sensor row. Each signal charge is read out.
[0035]
  FIG. 4 shows the clock timing in the highest resolution mode. Drive pulse φ applied to the last stage of the second CCD transfer register 28_2LIs the drive pulse φ₂Pulse with the same clock frequency and timing. Further, in order to transfer the signal charges of the first sensor array 23 and the second sensor array 24 without color mixing, the common CCD transfer register section 29 has 2 to the first and second CCD transfer registers 27 and 28. Transfer at double speed. For this reason, the drive pulse φ_Three, Φ_FourIs the drive pulse φ₁, Φ₂, Φ_2LThe pulse has a clock frequency that is twice as high.
[0036]
  The reset gate 32 has a drive pulse φ_FourReset pulse φ synchronized with_RSIs applied. In the highest resolution mode, the signal charge of each pixel of the main sensor array 23 read to the first CCD transfer register 27 and the signal charge of each pixel of the sub sensor array 24 read to the second CCD transfer register 28. Are alternately transferred to the common CCD transfer register unit 29, and thus are alternately transferred to the floating diffusion region 31, subjected to charge-voltage conversion, and output through the output circuit 34.
[0037]
  Next, in the case of the half resolution mode, only the signal charge of the first sensor array 23 which is the main sensor array is read using the first CCD transfer register 27, and the second sensor which is the sub sensor array is read out. The signal charge in column 24 is not read out.
[0038]
  FIG. 5 shows the clock timing when the half resolution mode is used, that is, only the main sensor array is used. Drive pulse φ₁And φ_FourAre pulses with the same clock frequency and the same timing, and drive pulse φ₂And φ_ThreeAre pulses with the same clock frequency and the same timing. Drive pulse φ applied to the transfer unit 42c at the final stage of the second CCD transfer register 28_2LIs maintained at a predetermined low level during the period in which the signal charges of the first sensor array 23 are transferred. Here, the potential of the overflow gate portion 45 is φ_2LBy setting it deeper than the potential of₁The electrons stored under the gate of_2LIt is designed to be transferred to the overflow drain 48 via the overflow gate part 45 without being transferred to the transfer part 42c.
[0039]
  In the half resolution mode, only the signal charge of the main sensor array 23 is transferred to the floating diffusion region 31 through the first CCD transfer register 27, converted into charge voltage, and output through the output circuit 34.
[0040]
  On the other hand, the signal charges of the sub-sensor array 24 read to the second CCD transfer register 28 are transferred to the second CCD transfer register 28 but are not transferred to the common CCD transfer register unit 29. The final drive pulse φ of the second CCD transfer register 24 is not transferred to the diffusion region 31._2LIs stored in the storage section of the transfer section 42c, and the subsequent signal charge passes through the overflow gate section (overflow barrier) 45 and is swept away to the overflow drain 46.
[0041]
  The signal charge remaining in the transfer unit 42c is swept away by the reset drain 33 during the blanking period of the pixel signal after outputting the pixel signal for one column of the main sensor column 23. It is also possible to sweep away to the reset drain 33 during the reading of the main sensor array 23.
[0042]
  In the example of FIG. 2 described above, the charge sweeping means 361 composed of the overflow gate and the overflow drain is used as the charge sweeping means 36. However, as shown in FIG. 3, the electrons composed of the shutter gate 45 and the shutter drain 46 are used. It can also be constituted by charge sweeping means 362 having a shutter structure. The drive pulse is the same as in FIGS.
[0043]
  In the highest resolution mode, the shutter pulse applied to the shutter gate 45 of the charge sweep-out means 362 is set to a low level, and the signal charge of the main sensor row 23 and the signal charge of the sub sensor row 24 are respectively changed to the first CCD transfer register 27 and The signals are transferred to the common CCD transfer register unit 29 through the second CCD transfer register 28 and the signals of both sensor rows 23 and 24 are output.
[0044]
  In the half resolution mode, the shutter pulse applied to the shutter gate 45 of the charge sweep-out means 362 is set to a high level, and the signal charge of the sub sensor array 24 read out to the second CCD transfer register 28 is taken as the shutter gate. It is made to sweep away to the shutter drain 46 through 45. Then, only the signal charge of the main sensor array 23 is transferred to the floating diffusion region 31 through the first CCD transfer register 27, converted into charge voltage, and output from the output circuit 34.
[0045]
  According to the CCD linear sensor 21 according to this reference example shown in FIG. 1, the highest resolution mode and the half resolution mode can be selected as the readout mode. In the half resolution mode, the signal charges of the second sensor array 24, which is one of the sub sensor arrays, are swept away. At this time, unnecessary signal charges that are swept away are floating. Without being transferred to the diffusion region 31, the charge is swept away from the transfer unit 42 a near the end of the second CCD transfer register 28 to the charge sweeping means 36. In this charge sweeping means 36, the smear component charges in the second CCD transfer register 28 are also swept away. Therefore, the signal charge of the main sensor array 23 is not affected by the signal charge of the sub sensor array 24. That is, the signal from the main sensor array 23 does not fluctuate.
[0046]
  Further, in the half resolution mode, it is not necessary to transfer the signal charge of the sub sensor array 24 to the floating diffusion region 31, so that the drive pulse φ_Three, Φ_FourThe clock frequency of the drive pulse φ₁, Φ₂And the flatness of the waveform is increased.
[0047]
  The charge sweeping means 36 is provided so as to be connected to the so-called constriction transfer section 42a connected to the common CCD transfer register 29 of the second CCD transfer register 28, that is, provided in a useless area. The linear sensor layout can be densified.
[0048]
  The CCD linear sensor 21 can have a common electronic shutter function and an overflow drain function for preventing blooming.
[0049]
  The main sensor array and a plurality of sub sensor arrays are formed, and the CCD transfer registers of the main sensor array and the CCD transfer registers of the plurality of sub sensor arrays are connected to the common CCD transfer register section, and the CCD of each sub sensor array It is possible to configure a CCD linear sensor in which the above-described charge sweeping means is provided in the transfer register, and the signal charges of the required sensor array are read out by selecting the signal charges of the main sensor array and the sub sensor array. This comprises two or more read modes. Also in this case, the signal charges of the non-selected sub sensor array are swept away through the charge sweeping means and transferred to the floating diffusion region, so that this unnecessary charge may affect the selected signal charges. Absent.
[0050]
  In the above example, the pixel shift method is applied. However, the first and second sensor rows 23 and 24 can be applied to a method in which the pixels are not shifted.
[0051]
  The above-described CCD linear sensor 21 in FIG. 1 has a basic configuration in the pixel shifting method.
[0052]
  Next, FIG. 6 shows a second reference example when the pixel shift type CCD linear sensor 21 is applied to a color CCD linear sensor.
[0053]
  The color CCD linear sensor 51 according to this reference example includes a plurality of color linear sensors, for example, a sensor 52R, a G (green) linear sensor 52G, and a B (blue) linear sensor 52B at the rear of R (red). Each of the R linear sensor 52R, the G linear sensor 52G, and the B linear sensor 52B has a first sensor array 23 that is a main sensor array in which a plurality of sensor units 22 serving as pixels are arranged in one direction, as in FIG. And a second sensor array 24, which is a sub sensor array, are provided in parallel. For example, main transfer of two-phase driving is performed on one side of each of the first and second sensor arrays 23 and 24 via readout gates 25 and 26. A first CCD transfer register 27 serving as a register and a second CCD transfer register 28 serving as a sub-transfer register are arranged.
[0054]
  The first and second CCD transfer registers 27 and 28 are connected to the common CCD transfer register unit 29, and are adjacent to the final stage of the common CCD transfer register unit 29 and serve as an output gate unit 50 and a charge voltage conversion unit, for example, floating. A diffusion region 31 is formed. Further, a reset gate portion 32 and a reset drain 33 are formed adjacent to the floating diffusion region 31, and an output circuit 34 is connected to the floating diffusion region 31.
[0055]
  The charge is adjacent to the so-called constriction transfer unit 42a connected to the common CCD transfer register unit 29 of the second CCD transfer register 28 in each of the R linear sensor 52R, the G linear sensor 52G, and the B linear sensor 52B. A sweeping means 36 is provided.
[0056]
  The charge sweeping means 36 can be formed by the charge sweeping means 361 having the overflow drain structure shown in FIG. 2 or the charge sweeping means 362 having the shutter drain structure shown in FIG.
[0057]
  According to the color CCD linear sensor 51 according to this reference example, the highest resolution mode and the half resolution mode can be selected. In the half resolution mode, the signal charges 24 of the sub sensor array 24 read to the second CCD transfer register 28 are not transferred to the floating diffusion region 31 as described above, and the charge sweeping is performed. It is swept away to the discarding means 36. As a result, the signal charge of the main sensor array 23 is not affected by the signal charge of the sub sensor array 24 which is unnecessary.
[0058]
  The color CCD linear sensor 51 may be configured to select and read out only a required color linear sensor from the R linear sensor 52R, the G linear sensor 52G, and the B linear sensor 52B.
[0059]
  Further, only the required color linear sensor among the R linear sensor 52R, the G linear sensor 52G, and the B linear sensor 52B can be set to the half resolution mode, and the other color linear sensors can be read as the maximum resolution mode. Various read modes are possible. That is, two or more read modes can be provided.
[0060]
  Further, in the color CCD linear sensor 51 of FIG. 6, as shown by a broken line, a charge sweeping means 53 having a shutter drain structure or an overflow drain structure is provided outside the second CCD transfer register 28 corresponding to the sensor array region. It is also possible to provide it.
[0061]
  In order to narrow the interval between adjacent color linear sensors, it is preferable to provide charge sweeping means 36 indicated by a solid line on the end side of the second CCD transfer register 28.
[0062]
  Next, an embodiment of a CCD linear sensor according to the present invention applied to a solid-state imaging device or the like will be described. In the following embodiments, parts corresponding to those in the reference example described above are described with the same reference numerals.
[0063]
  FIG. 7 shows an embodiment of the CCD linear sensor of the present invention. The CCD linear sensor 61 according to the present embodiment is a case where the sensor is applied to a pixel shift type CCD rear as in the above-described reference example.
[0064]
  The CCD linear sensor 61 includes a first sensor row 23 serving as a main sensor row and a second sensor row 24 serving as a sub sensor row, in which a plurality of sensor units 22 each serving as a pixel are arranged in one direction. For example, a first CCD transfer register 27 serving as a main transfer register for two-phase driving and a second CCD transfer register 28 serving as a sub-transfer register are provided on one side of each sensor row 23 and 24 via a read gate unit 25 and 26. Arranged. The sensor rows 23 and 24 are formed so as to be shifted from each other by a half pitch.
[0065]
  The first and second CCD transfer registers 27 and 28 are connected to the common CCD transfer register unit 29 so as to be coupled on the output unit side, and are adjacent to the final stage of the common CCD transfer register unit 29 in a predetermined manner. An output gate portion 30 to which a fixed potential (for example, ground potential) is applied and a floating diffusion region 31 to be a charge-voltage conversion portion are formed. Further, a reset gate portion 32 and a reset drain 33 are formed so as to be adjacent to the floating diffusion region 31. An output circuit 34 is connected to the floating diffusion region 31.
[0066]
  In the present embodiment, in particular, as in the reference example, the overflow drain is connected so as to be connected to the transfer unit 42a corresponding to the so-called constricted portion, which is close to the common CCD transfer register unit 29 of the second CCD transfer register 28. The first charge sweeping means 36 [361, 362] (see FIGS. 2 and 3) having the structure or the shutter drain structure is formed, and the length of the sensor array is further provided on the other side of the second sensor array 24. A second charge sweeping means 62 comprising a shutter gate 63 and a shutter drain 64 is formed over the entire area.
[0067]
  The second charge sweeping means 62 is used for sweeping unnecessary charges in the 1/2 resolution mode. The second charge sweeping means 62 can also be used as a so-called electronic shutter means for controlling the exposure time. In this case, although not shown, the exposure time of the first sensor array 23 is also controlled on the first sensor array 23 side (on the side facing the second charge sweeping means 62). Electronic shutter means are provided.
[0068]
  According to the CCD linear sensor 61 according to the present embodiment, as in the reference example, in the highest resolution mode, the signal charges of the first sensor array 23 and the second sensor array 24 are the first and second CCDs. The data is transferred to the floating diffusion region 31 via the transfer registers 27 and 28 and output through the output circuit 34.
[0069]
  In the half resolution mode, only the signal charge of the first sensor array 23 is transferred to the floating diffusion region 31 and output through the output circuit 34, and the signal charge of the second sensor array 24 is output from the floating diffusion region 31. It is swept away without being transferred to. In other words, in the half resolution mode, unnecessary signal charges in the second sensor array 24 are collectively swept away by the second charge sweeping means 62 having the shutter drain structure.
[0070]
  On the other hand, in the second CCD transfer register 28, unnecessary charge that becomes a smear component existing in the second CCD transfer register 28 during the readout period of the signal of the first sensor array is transferred to the first charge sweeping means 36. Be swept away. Since the amount of charge of the smear component is sufficiently smaller than the amount of signal charge, the load capacity of the second CCD transfer register 28 at this time is reduced.
[0071]
  Therefore, in the CCD linear sensor 61, the signal charge of the first sensor array is not affected by unnecessary charges such as smear components and signal charges of the second sensor array in the half resolution mode. Thus, signal fluctuations can be more reliably suppressed.
[0072]
  In addition, the same effects as described in FIG.
[0073]
  As shown by a chain line instead of the first charge sweeping means 36, the first of the overflow drain structure or shutter drain structure is provided outside the second CCD transfer register 28 over the length of the second sensor array. The charge sweeping means 66 can be provided. However, it is more preferable to provide the charge sweeping means 36 in terms of increasing the density of the layout.
[0074]
  Figure 8 shows the CCD linear sensorOther reference examplesIndicates.This reference exampleIs an example of a CCD linear sensor having two or more linear sensor elements. This figure shows one linear sensor.This reference exampleThe CCD linear sensor 69, and thus the linear sensor element 691, is arranged via a sensor row 231 in which a plurality of sensor portions 22 serving as pixels are arranged in one direction and a reading gate portion 251 on one side of the sensor row 231. An output gate 30, for example, a floating diffusion region 31 that becomes a charge-voltage converter, a reset gate 32, and a reset drain 33 are sequentially formed in contact with the final stage of the CCD transfer register 271. The output circuit 34 is connected to the floating diffusion region 31.
[0075]
  This reference exampleIn particular, the first charge sweeping means 36 is provided in contact with the final stage of the CCD transfer register 271 or near the final stage, and the length of the sensor array 231 is in contact with the CCD transfer register 271 on the same side. For example, second charge sweeping means 73 including a shutter gate 71 and a shutter drain 72 is provided. On the other side of the sensor array 231, means 75 such as an overflow drain or a shutter drain can be provided via a gate portion 74, for example.
[0076]
  This reference exampleAccording to the CCD linear sensor 69, the signal charge of the selected linear sensor element 691 is converted into the CCD by selecting all of the two or more linear sensor elements 691 or a required linear sensor element 691 among them. The data is read to the transfer register 271 and output via the floating dee region 31 and the output circuit 34. Then, the signal charge of the linear sensor element 691 that is not selected is read out to the CCD transfer register 271 and is simultaneously swept away by the second charge sweeping means 73. Also, the selected linear sensor
While the signal charge of the element 691 is being transferred, the smear component (charge) in the CCD transfer register 271 is swept away by the first charge sweeping means 36. Thereby, the load capacity of the CCD transfer register 271 in the non-selected linear sensor element 691 is reduced.
[0077]
  A color CCD linear sensor may be configured by arranging three linear sensor elements 691 in FIG. 8 corresponding to R (red), G (green), and B (blue).
[0078]
  Figure 9 shows the CCD linear sensorOther reference examplesIndicates. This example is applied to a color CCD linear sensor. The color CCD linear sensor 81 according to the present embodiment includes a plurality of color linear sensors 82, for example, an R (red) linear sensor 82R, a G (green) linear sensor 82G, and a B (blue) linear sensor 82B.
[0079]
  Each of the R linear sensor 82R, the G linear sensor 82G, and the B linear sensor 82B includes a sensor column 232 in which a plurality of sensor units 22 serving as pixels are arranged in one direction, and a readout gate unit 252 on one side of the sensor column 232. The CCD transfer register 272 is arranged in contact with the output gate unit 30 in contact with the final stage of the CCD transfer register 272, for example, a floating diffusion region 31 serving as a charge-voltage conversion unit, a reset gate unit 32, and a reset drain 33 sequentially. The output circuit 34 is formed and connected to the floating diffusion region 31.
[0080]
  This reference exampleIn particular, the charge sweeping means 36 is provided in contact with the transfer stage at or near the final stage of the CCD transfer register 272. Further, an electronic shutter unit 84 including a shutter gate portion and a shutter drain is provided in contact with the other side of the sensor array 232.
[0081]
  This reference exampleAccording to the color CCD linear sensor 81, the R, G, and B linear sensors 82R, 82G, and 82B, or a required color linear sensor 82 among them, can be selected to select the selected linear sensor 82. The signal charges are read out to the CCD transfer register 272 and output via the floating diffusion region 31 and the output circuit 34. Then, the signal charges of the linear sensor 82 of the unselected color are read out to the CCD transfer register 272, transferred in the CCD transfer register 272, and then swept away by the charge sweeping means 36.
[0082]
  Further, since the electronic shutter unit 84 is provided, the signal charge of the non-selected color linear sensor 82 is swept out to the electronic shutter unit 84, and the smear component (charge) in the unselected CCD transfer register 272 is transferred to the charge sweeping unit 36. Be swept away. This electronic shutter 84 also serves as the second charge sweeping means. At this time, the load capacity of the CCD transfer register 271 in the non-selected linear sensor element 691 is reduced.
[0083]
  FIG. 10 shows another embodiment of the CCD linear sensor of the present invention. As shown in FIG. 10A, the CCD linear sensor 86 according to the present embodiment includes a sensor array 233 in which a plurality of sensor units 22 [22A, 22B] serving as pixels are arranged in one direction. Two-phase driving first and second CCD transfer registers 273 and 274 are arranged on both sides of the first and second CCDs via read gate portions 253 and 254, respectively. The first and second CCD transfer registers 273 and 274 are arranged so as to be shifted from each other by one pitch. The first and second CCD transfer registers 273 and 274 are connected to the common charge via the output gate unit 30 adjacent to the final transfer unit of the CCD transfer registers 273 and 274 so that they are coupled on the output side. For example, the voltage converter is connected to, for example, a floating diffusion region 31, a reset gate 32 and a reset drain 33 are sequentially formed, and an output circuit 34 is connected to the floating diffusion region 31. The multiplex portion of the CCD transfer registers 273 and 274 can be configured as shown in FIG. 10B. Portions corresponding to FIG. 10A are denoted by the same reference numerals and description thereof is omitted.
[0084]
  In the present embodiment, in particular, as shown in FIGS. 2 and 3, the charge sweeping means 36 is in contact with one of the CCD transfer registers, for example, the transfer stage of the CCD transfer register 274 or close to the transfer stage. Provided.
[0085]
  According to the CCD linear sensor 86 according to the present embodiment, the signal charge of the odd-numbered sensor unit 22A is read to the first CCD transfer register 273, and the signal charge of the even-numbered sensor unit 22B is read from the second CCD. The data is read to the transfer register 274 and sequentially transferred to the floating diffusion region 31, subjected to charge voltage conversion, and output through the output circuit 34.
[0086]
  In this CCD linear sensor 86, only the signal charge of the odd-numbered sensor unit 22A is selected and read out via the first CCD transfer register 273, and the signal charge of the even-numbered sensor unit 22B is swept away. A read mode function can be provided. In this reading mode, the signal charges of the non-selected even-numbered sensor units 22B are read to the second CCD transfer register 274 and are not transferred to the floating diffusion region 31. More swept away. Thereby, the signal charges of the odd-numbered sensor units 22A can be output without being affected by the signal charges of the non-selected even-numbered sensor units 22B. Also in this case, it is not necessary to transfer the signal charges of the non-selected even-numbered sensor units 22B, so that the drive pulse φ of the common CCD transfer register 293 is obtained._Three, Φ_FourClock frequency is φ₁, Φ₂And the flatness of the waveform is increased.
[0087]
  Three CCD linear sensors 86 corresponding to R, G, and B can be arranged to form a color CCD linear sensor.
[0088]
  In the above-described embodiment, when the mode for reading out only the signal charges of the required sensor array or sensor unit is not required, and the drive pulse frequency is the same as the drive pulse frequency in the highest resolution mode, High-speed reading is possible. In addition, if the same readout time as that in the highest resolution mode is used, the drive pulse frequency becomes low, the data area becomes long, and external signal processing becomes easy.
[0089]
  FIG. 11 shows another embodiment of the CCD linear sensor of the present invention. As described above, the CCD linear sensor 88 according to the present embodiment includes a first sensor row 23 and a second sensor row 24 in which a plurality of sensor units 22 each serving as a pixel are arranged in one direction. For example, a first CCD transfer register 27 and a second CCD transfer register 28 that are driven in two phases are arranged on one side of the respective sensor rows 23 and 24 via read gate portions 25 and 26.
[0090]
  In this example, the sensor rows 23 and 24 are arranged on the same side with respect to the transfer registers 27 and 28. Further, in each of the sensor rows 23 and 24, each sensor unit 22 (S₁~ S_n), Sensor unit 22 (S₁′ 〜S_nBefore and after ′), the dummy sensor unit 22 (D for obtaining the black reference level of the output signal)₁~ D_n) And 22 (D_{n + 1}~ D_m), Dummy sensor unit 22 (D₁'~ D_n') And 22 (D_{n + 1}'~ D_m′) Are arranged. This dummy sensor part (D₁~ D_n) And 22 (D_{n + 1}~ D_m), Dummy sensor unit 22 (D₁'~ D_n') And 22 (D_{n + 1}'~ D_mThe upper surface of ′) is covered with a light shielding film. The pixel arrangement of the sensor rows 23 and 24 can employ either a pixel shifting method or a method without pixel shifting.
[0091]
  The first and second CCD transfer registers 27 and 28 are connected to the common CCD transfer register unit 29 so as to be coupled on the output unit side, and are adjacent to the final stage of the common CCD transfer register unit 29 in a predetermined manner. An output gate portion 30 to which a fixed potential (for example, ground potential) is applied, and a floating diffusion region or a floating gate portion serving as a charge-voltage conversion portion, in this example, a floating diffusion region 31 are formed. Further, a reset gate portion 32 and a reset drain 33 are formed so as to be adjacent to the floating diffusion region 31. An output circuit 34 is connected to the floating diffusion region 31.
[0092]
  In this embodiment, in particular, the charge sweeping means 91 and 92 are formed adjacent to the other side of the first and second sensor rows 23 and 24, that is, the side opposite to the transfer registers 27 and 28. . The charge sweeping means 91 and 92 are formed having a gate portion 93 and a charge sweeping drain portion 94 controlled by a gate pulse, respectively. As the charge sweep-out means 91 and 92, for example, an electronic shutter means comprising a shutter gate and a shutter drain for controlling the exposure time of the sensor array can be used.
[0093]
  On the other hand, when reading out the signal charges of the required sensor array 23 (or 24), there is provided selection means for selecting the charge sweeping means of the non-selected sensor array 24 (or 23) and putting it into an operating state. For example, when reading the signal charges of the two sensor rows 23 and 24, the charge sweeping means 91 and 92 of each sensor row 23 and 24 are both deactivated, and one of the sensor rows, for example, the first sensor row 23, for example. When the signal charge is read out and only the signal charge is read out, first selection means (not shown) is provided for bringing the charge sweeping means 92 of the non-selected sensor array 24 into an operating state. The first selection means includes, for example, a pulse supply means for supplying a charge sweep pulse to the respective gate portions 93 of the charge sweep means 91 and 92, and a non-selection of the charge sweep pulse from the pulse supply means. It can be constituted by switching means for supplying only to the gate portion 93 of the charge sweeping means 92 (or 91) of the sensor array 24 (or 23).
[0094]
  Further, when the signal charge of the required sensor row 23 (or 24) is read, a means for selecting the read gate portion 26 (or 25) of the non-selected sensor row 24 (or 23) and turning it off, that is, Second selection means are provided. For example, when the signal charges of both the sensor rows 23 and 24 are read, the second selection means supplies the read gate pulse to the read gate portions of both the sensor rows 23 and 24 and turns it on. When 23 (or 24) is selected and only the signal charge is read, the readout gate pulse of the non-selected sensor array 24 (or 23) is configured by switching means so that no readout gate pulse is supplied. be able to.
[0095]
  FIG. 12 shows an example of a main part of the CCD transfer register of the CCD linear sensor 88, that is, a part where the first and second transfer registers 27 and 28 are multiplexed. As shown in FIG. 12, the first CCD transfer register 27 has a two-phase drive pulse (clock pulse) φ.₁And φ₂Are sequentially arranged, for example, the driving pulse φ at the final stage₂Is formed such that the transfer unit 41 b to which the voltage is applied is connected to the common CCD transfer register unit 29. Similarly, the second CCD transfer register 28 has a two-phase drive pulse φ₁And φ₂Are sequentially arranged and, for example, a driving pulse φ at the final stage₁Is formed such that the transfer unit 42 a to which the voltage is applied is connected to the common CCD transfer unit 29.
[0096]
  In the common CCD transfer register unit 29, a two-phase drive pulse (clock pulse) φ_ThreeAnd φ_FourThe transfer units 43a and 43b to which is applied are arranged. In this example, the drive pulse φ_ThreeIs applied to the drive pulse φ of the first and second CCD transfer registers 27 and 28.₂And φ₁Are connected to the final stage transfer units 41 b and 42 a, and the final stage transfer unit 43 b is connected to the output gate unit 30 adjacent to the floating diffusion region 31.
[0097]
  Next, the operation of the CCD linear sensor 88 according to this embodiment will be described. In the case of the highest resolution mode, the signal charges of the first sensor array 23 and the second sensor array 24 are read using the first CCD transfer register 27 and the second CCD transfer register 28.
[0098]
  FIG. 13 shows the clock timing in the highest resolution mode. Here, as in FIG. 4 described above, in order to transfer the signal charges of the first sensor array 23 and the second sensor array 24 without color mixing, the common CCD transfer register section 29 is provided with the first and second CCDs. Transfer to the transfer registers 27 and 28 at double speed. For this reason, the drive pulse φ_Three, Φ_FourIs the drive pulse φ₁, Φ₂The pulse has a clock frequency that is twice as high.
[0099]
  The reset gate 32 has a drive pulse φ_FourReset pulse φ synchronized with_RSIs applied. In the highest resolution mode, the signal charge of each pixel of the first sensor array 23 read out to the first CCD transfer register 27 and the second sensor array 24 read out to the second CCD transfer register 28. The signal charges of the respective pixels are alternately transferred to the common CCD transfer unit 29, and accordingly are alternately transferred to the floating diffusion region 31 and converted into charge voltages, and sequentially output signals S through the output circuit.₁, S₁', S₂, S₂', ... are output.
[0100]
  Next, in the case where high resolution is not required, that is, in the case of half resolution, in this example, only the signal charge of the first sensor array 23 is only one of the two sensor arrays 23 and 24. One CCD transfer register 27 is used for reading, and the signal charges of the non-selected second sensor array 24 are not transferred to the second transfer register 28 but are swept to the charge sweeping means 92.
[0101]
  That is, a charge sweeping pulse is applied to the gate part 93 of the charge sweeping unit 92 of the non-selected second sensor array 24 by the first selection unit described above, and the charge sweeping unit 92 is set in the charge sweeping state. Become. In addition, the readout pulse is not applied to the readout gate unit 26 of the non-selected second sensor array 24 by the second selection unit, and the readout gate unit 26 is turned off. Accordingly, the signal charges of the non-selected second sensor array 24 are not transferred to the second transfer register 28 but are all swept away by the charge sweeping unit 92.
[0102]
  FIG. 14 shows the clock timing when the half resolution mode is used, that is, only one sensor row, for example, the first sensor row is used. Drive pulse φ₁And φ_ThreeAre pulses with the same clock frequency and the same timing, and drive pulse φ₂And φ_FourAre pulses with the same clock frequency and the same timing.
[0103]
  In this half resolution mode, the drive pulse (φ₁, Φ₂) Drive pulse (φ₁, Φ₂, Φ_Three, Φ_Four) Is used to transfer only the signal charges of the necessary sensor array, for example, the first sensor array 23 to the floating diffusion region 31 through the first CCD transfer register 27 without changing the frequency of the so-called transfer clock, and the charge voltage The output signal S is sequentially converted through the output circuit 34 after conversion.₁, S₂, S_Three, S_Four, ... can be output.
[0104]
  According to the CCD linear sensor 88 according to the present embodiment shown in FIG. 11, the highest resolution mode and the half resolution mode can be selected as the readout mode. In the case of the half resolution mode, the signal charge of one second sensor row 24 is not transferred to the second transfer register 28, and therefore is not transferred to the floating diffusion region 31. It is swept directly to the charge sweeping means 92. Therefore, in the half resolution mode, when the drive pulse frequency is the same as the drive pulse frequency in the highest resolution mode, high-speed reading is possible. Further, if reading is performed in the same time as in the highest resolution mode, the driving frequency is halved, the data area becomes longer, and external signal processing becomes easier. Further, the selected signal charge is not affected by the unnecessary signal charge of the second sensor array.
[0105]
  The CCD linear sensor 88 of FIG. 11 can also be applied to a color CCD linear sensor. In FIG. 11, the present invention is applied to a CCD linear sensor having two sensor rows, but can be applied to a CCD linear sensor having three or more sensor rows. In FIG. 11, the charge sweeping means is provided for all of the plurality of sensor rows, but the charge sweeping means is provided only for other predetermined sensor rows (sensor rows that are not selected in the so-called low resolution mode). You may do it.
[0106]
  The configuration of the present invention in which the signal charge of the non-selected sensor array is not transferred to the transfer register but is swept away by the charge sweeping means adjacent to the sensor array is the arrangement of the plurality of sensor arrays as shown in FIG. It can also be applied to linear sensors.
[0107]
【The invention's effect】
  According to the solid-state imaging device of the present invention, two or more readout modes are provided, and unselected unnecessary charges are swept away by the charge sweeping means when reading out the required signal charge, so that it is affected by unnecessary charges. The selected signal charge can be output without any problem.
[0108]
  According to the solid-state imaging device according to the present invention, for one sensor rowTwoTransfer registers,Multiple sensors in one sensor rowThe signal charge of the sensor unitDistribute into odd and even twoIn the case of the configuration of transferring to the transfer register, when only the signal charge of the selected sensor unit is read by the required transfer register, it is not affected by the unselected unnecessary charge. Also,Odd or evenIn reading the signal charge of the sensor unit, high-speed reading is possible, and external signal processing is facilitated.
[0109]
  According to the driving method of the solid-state imaging device according to the present invention, for one sensor rowTwoHave transfer registersOdd or even number transferred to two transfer registersWhen the signal charge of the sensor unit is selected and read out, the unnecessary charge in the non-selected transfer register is not transferred to the charge voltage conversion unit, but is swept away by the charge sweeping means provided in the transfer register, thereby removing the unnecessary charge. The selected signal charge can be output without being affected by the above.
[0110]
  In addition, the required signal charges of the sensor unit can be read at high speed, and external signal processing is facilitated.
[0111]
  According to the solid-state imaging device according to the present invention, a plurality of sensor rows,A plurality of transfer registers provided corresponding to each sensor row;Charge sweeping means adjacent to a plurality of sensor rows or predetermined sensor rows;A common charge-voltage converter for transferring signal charges from a plurality of transfer registers;When the signal charge of the required sensor array is read, the charge sweeping means for the non-selected sensor array is selected, and the signal gate of the non-selected sensor array is turned off by turning off the readout gate portion of the sensor array. By adopting a configuration in which the charges are swept away by the charge sweeping means without being transferred to the transfer register, the signal of the selected required sensor array can be read at high speed without being affected by the signal of the non-selected sensor array. . In addition, external signal processing is facilitated. Therefore, high-resolution readout and high-speed readout when resolution is not requiredBothCan be easily realized.
[0112]
  According to the driving method of the solid-state imaging device according to the present invention, a plurality of transfer registers provided corresponding to a plurality of sensor rows are selected to read out signal charges of a required sensor row, and when reading out the signal charges, By sweeping out the signal charges of the non-selected sensor array without reading it to the transfer register, the signal of the selected required sensor array can be read at high speed without being influenced by the signal of the non-selected sensor array. In addition, external signal processing is facilitated. Therefore, both high-resolution reading and high-speed reading when no resolution is required can be easily realized.
[Brief description of the drawings]
FIG. 1 is a configuration diagram of a first reference example of an A and B CCD linear sensor and an enlarged view of a main part of FIG. 1A.
2 is an enlarged configuration diagram illustrating an example of a main part of the transfer register of FIG. 1A.
FIG. 3 is an enlarged configuration diagram illustrating another example of a main part of the transfer register of FIG. 1A.
FIG. 4 is a clock timing diagram in the highest resolution mode of the CCD linear sensor of FIG. 1A.
FIG. 5 is a clock timing diagram in the half resolution mode of the CCD linear sensor of FIG. 1A.
FIG. 6 is a configuration diagram of a second reference example of the CCD linear sensor.
FIG. 7 is a configuration diagram of an embodiment of a CCD linear sensor of the present invention.
[Figure 8] CCD linear sensorOther reference examplesFIG.
[Fig. 9] Further CCD inputOther reference examplesFIG.
FIGS. 10A and 10B are a configuration diagram of another embodiment of a CCD linear sensor of the present invention, and a configuration diagram of another example of a main part of a transfer register unit.
FIG. 11 is a configuration diagram of another embodiment of a CCD linear sensor of the present invention.
12 is an enlarged configuration diagram of a main part of FIG.
13 is a clock timing chart in the highest resolution mode of the CCD linear sensor of FIG. 11. FIG.
14 is a clock timing diagram in the half resolution mode of the CCD linear sensor of FIG. 11. FIG.
FIGS. 15A and 15B are a configuration diagram showing an example of a conventional CCD linear sensor and an enlarged view of a main part thereof. FIGS.
FIG. 16 is a configuration diagram showing another example of a conventional CCD linear sensor.
[Explanation of symbols]
21, 26, 69, 86, 88... CCD linear sensor, 22... Sensor section (pixel) 23... First (main) sensor array, 24. ··· Read gate portion, 27, 28 ··· CCD transfer register, 29 ··· Common CCD transfer register portion, 30 ··· Output gate portion, 31 ··· Floating diffusion region, 32 ··· Reset gate portion and 33 ··· Reset drain 36, 361, 362 ... charge sweeping means, 45 ... overflow gate section, 46 ... overflow drain, 47 ... shutter gate, 48 ... shutter drain, 51, 81 ... color CCD linear sensor, 52R, 52G, 52B ... Linear sensor element, 62 ... Second charge sweeping means, 91, 92 ... Charge sweeping means

Claims (4)

One or more sensor rows;
Two transfer registers provided for one of the sensor arrays, which distribute and transfer the signal charges of a plurality of sensor units in one sensor array to an odd number and an even number;
A common charge-voltage converter to which signal charges from the two transfer registers are transferred;
Charge sweeping means provided in the transfer register that is non-selected according to the read mode,
A solid-state imaging device, wherein signal charges of transfer registers that are not selected are swept away by the charge sweeping means. One or a plurality of sensor rows, two transfer registers provided for the one sensor row, and a common charge-voltage conversion unit to which signal charges from the two transfer registers are transferred ,
The signal charges of a plurality of sensor units in one sensor array are divided into odd and even numbers and transferred to the two transfer registers,
A method for driving a solid-state imaging device, wherein signal charges transferred to a transfer register that is not selected in accordance with a read mode are swept away by charge sweeping means provided in the transfer register. Multiple sensor rows;
A plurality of transfer registers provided via readout gates corresponding to each sensor row;
Charge sweeping means provided adjacent to each sensor row or predetermined sensor row;
A selection means for selecting a charge sweeping means for a non-selected sensor array;
Means for selecting and turning off the readout gate portion of the non-selected sensor array;
A common charge-voltage converter to which signal charges from the plurality of transfer registers are transferred, and
A solid-state imaging device, wherein when reading a signal charge of a required sensor array, the signal charge of the non-selected sensor array is swept to the charge sweeping means without being read to the transfer register. Multiple sensor rows;
A plurality of transfer registers provided via readout gates corresponding to each sensor row;
Charge sweeping means provided adjacent to each sensor row or predetermined sensor row;
A common charge voltage conversion unit to which signal charges from the plurality of transfer registers are transferred,
Select the plurality of transfer registers and read the signal charges of the required sensor array,
When reading out the signal charge, the charge sweeping means provided adjacent to the non-selected sensor column is selected, and the read gate unit corresponding to the non-selected sensor column is turned off to transfer the non-selected signal charge. A method for driving a solid-state imaging device, wherein the charge is swept away by a charge sweeping means.

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