JP4619318B2 - 光電変換装置 - Google Patents

光電変換装置 Download PDF

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Publication number
JP4619318B2
JP4619318B2 JP2006137823A JP2006137823A JP4619318B2 JP 4619318 B2 JP4619318 B2 JP 4619318B2 JP 2006137823 A JP2006137823 A JP 2006137823A JP 2006137823 A JP2006137823 A JP 2006137823A JP 4619318 B2 JP4619318 B2 JP 4619318B2
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JP
Japan
Prior art keywords
film
photoelectric conversion
electrode
light
tft
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006137823A
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English (en)
Japanese (ja)
Other versions
JP2007005774A5 (enrdf_load_stackoverflow
JP2007005774A (ja
Inventor
達也 荒尾
篤志 広瀬
和夫 西
裕輔 菅原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2006137823A priority Critical patent/JP4619318B2/ja
Publication of JP2007005774A publication Critical patent/JP2007005774A/ja
Publication of JP2007005774A5 publication Critical patent/JP2007005774A5/ja
Application granted granted Critical
Publication of JP4619318B2 publication Critical patent/JP4619318B2/ja
Expired - Fee Related legal-status Critical Current
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  • Solid State Image Pick-Up Elements (AREA)
  • Thin Film Transistor (AREA)
  • Light Receiving Elements (AREA)
JP2006137823A 2005-05-23 2006-05-17 光電変換装置 Expired - Fee Related JP4619318B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006137823A JP4619318B2 (ja) 2005-05-23 2006-05-17 光電変換装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005148864 2005-05-23
JP2006137823A JP4619318B2 (ja) 2005-05-23 2006-05-17 光電変換装置

Publications (3)

Publication Number Publication Date
JP2007005774A JP2007005774A (ja) 2007-01-11
JP2007005774A5 JP2007005774A5 (enrdf_load_stackoverflow) 2009-06-04
JP4619318B2 true JP4619318B2 (ja) 2011-01-26

Family

ID=37691027

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006137823A Expired - Fee Related JP4619318B2 (ja) 2005-05-23 2006-05-17 光電変換装置

Country Status (1)

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JP (1) JP4619318B2 (enrdf_load_stackoverflow)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007125977A1 (en) * 2006-04-27 2007-11-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic appliance using the same
US8514165B2 (en) 2006-12-28 2013-08-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2008123119A1 (en) 2007-03-26 2008-10-16 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and electronic device provided with the photoelectric conversion device
EP2075840B1 (en) * 2007-12-28 2014-08-27 Semiconductor Energy Laboratory Co., Ltd. Method for dicing a wafer with semiconductor elements formed thereon and corresponding device
JP5388632B2 (ja) * 2008-03-14 2014-01-15 株式会社半導体エネルギー研究所 半導体装置
US8124922B2 (en) * 2008-05-21 2012-02-28 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device including photoelectric conversion element and amplifier circuit having a thin film transistor
US8363365B2 (en) * 2008-06-17 2013-01-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN105789324B (zh) * 2016-04-15 2019-05-03 京东方科技集团股份有限公司 传感器及其制造方法、电子设备
CN118301493A (zh) 2018-02-02 2024-07-05 索尼半导体解决方案公司 光检测传感器、固态图像传感器及其控制方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3398195B2 (ja) * 1993-10-19 2003-04-21 ティーディーケイ株式会社 Ｔｆｔフォトトランジスタ、その製造方法及びこれを使用した光センサ回路
JP3267375B2 (ja) * 1993-03-23 2002-03-18 ティーディーケイ株式会社 固体撮像装置
JPH10256841A (ja) * 1997-03-14 1998-09-25 Sony Corp フォトダイオード増幅回路
WO2004068582A1 (ja) * 2003-01-08 2004-08-12 Semiconductor Energy Laboratory Co., Ltd. 半導体装置及びその作製方法

Also Published As

Publication number Publication date
JP2007005774A (ja) 2007-01-11

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