JP4619080B2 - Light emitting device - Google Patents
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- JP4619080B2 JP4619080B2 JP2004282795A JP2004282795A JP4619080B2 JP 4619080 B2 JP4619080 B2 JP 4619080B2 JP 2004282795 A JP2004282795 A JP 2004282795A JP 2004282795 A JP2004282795 A JP 2004282795A JP 4619080 B2 JP4619080 B2 JP 4619080B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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Description
本発明は、発光素子搭載基板および発光装置に関し、特に照明用途などの高輝度で、高発熱を伴う発光素子搭載基板および発光装置に関するものである。 The present invention relates to a light-emitting element mounting substrate and a light-emitting device, and more particularly to a light-emitting element mounting substrate and a light-emitting device with high brightness and high heat generation for lighting applications.
近年、半導体を用いた青色や紫外線の発光が可能な小型の発光装置が実用化されている。半導体を用いた発光装置は、従来の蛍光灯などに比べて、小型化が容易で、製品寿命が長く、消費電力が小さいといった多くの利点があるため、利用が急速に広がっている。さらに、蛍光灯では環境的側面から敬遠される水銀を使用しており、水銀を用いない半導体を用いた発光装置は、環境面からも使用が促進されつつある。 In recent years, small-sized light emitting devices that can emit blue or ultraviolet light using a semiconductor have been put into practical use. A light-emitting device using a semiconductor is rapidly spreading because it has many advantages over a conventional fluorescent lamp and the like that it can be easily downsized, has a long product life, and consumes less power. Further, fluorescent lamps use mercury that is avoided from the environmental aspect, and light emitting devices using semiconductors that do not use mercury are being promoted from the environmental viewpoint.
しかしながら、半導体を用いた発光装置は、蛍光灯のように一般照明に使用できるほど十分な輝度、照度が得られておらず、さらに輝度、照度を高めるための開発が進められている。 However, light-emitting devices using semiconductors do not have sufficient luminance and illuminance to be used for general illumination like fluorescent lamps, and development for further increasing luminance and illuminance is underway.
半導体を用いた発光装置は、主に半導体よりなる発光素子と発光素子搭載基板とから構成される。発光装置の輝度を高めるために、半導体よりなる発光素子の改良が進められる一方で、それを実装する発光素子搭載基板についても、それを構成する絶縁基板に、従来の有機樹脂よりなる有機樹脂基板から、より放熱性の高いセラミック基板を使用することが検討されている。 A light emitting device using a semiconductor mainly includes a light emitting element made of a semiconductor and a light emitting element mounting substrate. In order to increase the luminance of the light emitting device, improvement of the light emitting element made of a semiconductor is being promoted. On the light emitting element mounting substrate for mounting the light emitting device, an organic resin substrate made of a conventional organic resin is used as an insulating substrate constituting the light emitting element mounting substrate. Therefore, it has been studied to use a ceramic substrate with higher heat dissipation.
一方で、多くの発光素子を高密度に発光素子搭載基板に実装することで、１つの発光素子を用いた発光装置よりも、2倍、3倍の輝度、照度を得ることが検討されている。多くの発光素子を高密度に実装するためには、発光素子搭載基板に形成するパターン状の配線層を高精度で微細なものにする必要がある。 On the other hand, by mounting many light-emitting elements on a light-emitting element mounting substrate with high density, it has been studied to obtain twice or three times the luminance and illuminance than a light-emitting device using one light-emitting element. . In order to mount many light emitting elements at high density, it is necessary to make the patterned wiring layer formed on the light emitting element mounting substrate fine with high accuracy.
また、発光素子と発光素子搭載基板とを電気的に接続するために、これまでワイヤーボンディングを用いて接続されることが主流であったが、発光装置の高さを低くして、低背化するために、フリップチップボンディングによって発光素子と発光素子搭載基板とを接続することも検討されている。
しかしながら、特許文献１に述べられているような発光装置によれば、発光素子搭載基板の絶縁基板をセラミック基板として、より放熱性の高い窒化アルミニウム質焼結体を用いた場合、配線層のパターンとパターンの隙間部から発光素子の光が漏れるという問題があった。すなわち、窒化アルミニウム質焼結体はアルミナ質焼結体に比べて、熱伝導率が５倍以上高いため、発光装置の放熱性を高めることができ、より高い輝度、照度が得られるが、窒化アルミニウム質焼結体は透光性であるため、パターン状の配線層同士の隙間から光が漏れて、絶縁基板の窒化アルミニウムを透過することにより光損失が生じるという問題があった。 However, according to the light emitting device described in Patent Document 1, when the insulating substrate of the light emitting element mounting substrate is a ceramic substrate and the aluminum nitride sintered body having higher heat dissipation is used, the pattern of the wiring layer There is a problem that light of the light emitting element leaks from a gap portion of the pattern. That is, since the aluminum nitride sintered body has a thermal conductivity that is five times higher than that of the alumina sintered body, the heat dissipation of the light emitting device can be improved, and higher brightness and illuminance can be obtained. Since the aluminum-based sintered body is translucent, there is a problem in that light leaks due to light leaking from the gaps between the patterned wiring layers and passing through the aluminum nitride of the insulating substrate.
一方、特許文献２に述べられているような発光装置によれば、絶縁基板の上に形成された配線層のパターンとパターンの隙間部に反射パラボラを設けることにより、発光素子から放出された光を効率的に反射させることが提案されている。この反射パラボラは、より効率的な反射を行うためには、金属メッキ、特にＡｇメッキが有効であると記載されている。しかしながら、より効率よく発光素子の光を反射させるために反射パラボラを大きくすると、配線層との反射パラボラとのギャップが小さくなり、電気的にショートする問題があった。 On the other hand, according to the light emitting device described in Patent Document 2, the light emitted from the light emitting element is provided by providing the reflective parabola in the gap portion between the pattern of the wiring layer formed on the insulating substrate. It has been proposed to reflect the light efficiently. This reflective parabola is described as being effective for metal plating, particularly Ag plating, in order to perform more efficient reflection. However, when the reflection parabola is increased in order to reflect the light of the light emitting element more efficiently, there is a problem that a gap between the reflection parabola and the wiring layer is reduced, and an electrical short circuit occurs.
本発明は、かかる従来技術の問題点に鑑み完成されたものであり、その目的は、より小型、低背で、放熱性のよい、より輝度、照度を高くできる発光素子搭載用基板、およびそれを用いた発光装置を提供することにある。 The present invention has been completed in view of the problems of the prior art, and has an object of mounting a light-emitting element mounting substrate that is smaller, has a low profile, has good heat dissipation, and can have higher luminance and illuminance. Another object is to provide a light emitting device using the above.
本発明の発光装置は、絶縁基板と、該絶縁基板の上面に形成された金属から成る光反射層と、該光反射層の上面の一部に形成された絶縁層と、該絶縁層の上面の全面に形成された、発光素子の電極が電気的に接続される配線導体とを具備している発光素子搭載基板と、前記配線導体に電気的に接続された前記発光素子とを具備している発光装置であって、前記絶縁層は前記発光素子が発光する光の波長の（２ｎ−１）／４倍の厚みであり、前記配線導体は一対のものが対向して形成されており、前記発光素子の一主面に形成された一対の電極が一対の前記配線導体に接合材を介して電気的に接続されており、前記光反射層は前記発光素子の直下に位置するとともに対向する一対の前記配線導体間に位置するように形成されていることを特徴とする。
The light emitting device of the present invention includes an insulating substrate, a light reflecting layer made of metal formed on the upper surface of the insulating substrate, an insulating layer formed on a part of the upper surface of the light reflecting layer, and an upper surface of the insulating layer. A light emitting element mounting substrate having a wiring conductor that is electrically connected to the electrode of the light emitting element, and the light emitting element that is electrically connected to the wiring conductor. The insulating layer has a thickness of (2n-1) / 4 times the wavelength of light emitted by the light emitting element, and the wiring conductors are formed to face each other, A pair of electrodes formed on one main surface of the light emitting element is electrically connected to the pair of wiring conductors via a bonding material, and the light reflecting layer is positioned immediately below and opposed to the light emitting element. and characterized in that it is formed so as to be positioned between the pair of the wiring conductor That.
本発明の発光装置によれば、本発明における発光素子搭載用基板が、絶縁基板と、絶縁基板の上面に形成された金属から成る光反射層と、光反射層の上面の一部に形成された絶縁層と、絶縁層の上面の全面に形成された、発光素子の電極が電気的に接続される配線導体とを具備しているため、配線導体を高密度に配置することができるとともに、発光素子より下側に放出された光や発光素子の下側に侵入してきた光を光反射層によって高効率に反射させることができる。その結果、輝度、照度の高い小型の発光装置を形成することができる。
According to the light emitting device of the present invention, the light emitting element mounting substrate in the present invention is formed on the insulating substrate, the light reflecting layer made of metal formed on the upper surface of the insulating substrate, and a part of the upper surface of the light reflecting layer. and an insulating layer, formed on the entire upper surface of the insulating layer, the electrode of the light emitting element is provided with a wiring conductor which is electrically connected, it is possible to arrange the wiring conductor on high density, Light emitted to the lower side of the light emitting element and light entering the lower side of the light emitting element can be reflected with high efficiency by the light reflecting layer. As a result, it is possible to form Luminance, the light-emitting device with high intensity small.
すなわち、光反射層と配線導体とが上下方向に絶縁層を介して積層されているため、平面視において光反射層と配線導体とを接近させても光反射層と配線導体とがショートすることはないので、配線導体同士をより近づけて高密度化することができるとともに、平面視において絶縁基板を光反射層と配線導体とによって隙間なく覆うことができ、光が光反射層と配線導体との隙間から絶縁基板を透過することによって光損失が生じるのをきわめて有効に防止できる。 In other words, since the light reflecting layer and the wiring conductor are stacked with the insulating layer in the vertical direction, even if the light reflecting layer and the wiring conductor are brought close to each other in a plan view, the light reflecting layer and the wiring conductor are short-circuited. Therefore, the wiring conductors can be brought closer to each other and densified, and the insulating substrate can be covered with the light reflecting layer and the wiring conductor without a gap in plan view. It is possible to very effectively prevent light loss from being transmitted through the insulating substrate through the gap.
また、本発明の発光装置において、絶縁層は、光反射層の上面の一部に形成されているとともに、絶縁層の上面の全面に配線導体が形成されているため、絶縁層によって光反射層と配線導体とが電気的にショートすることがなく、また、平面視において絶縁基板を光反射層と配線導体とによって隙間なく覆うことができ、光が光反射層と配線導体との隙間から絶縁基板を透過することによって光損失が生じるのをきわめて有効に防止できる。ま
た、絶縁層は発光素子が発光する光の波長の（２ｎ−１）／４倍の厚みであるため、絶縁層の表面で反射した光と光反射層で反射した光とが干渉して光を増強することができる。
In the light-emitting device of the present invention, absolute Enso, together are formed in a part of the upper surface of the light reflecting layer, since the entire surface wiring conductor on the upper surface of the insulating layer is formed, the light reflected by the insulating layer The layer and the wiring conductor are not electrically short-circuited, and the insulating substrate can be covered with the light reflecting layer and the wiring conductor without a gap in plan view. Light loss caused by transmission through the insulating substrate can be extremely effectively prevented. Ma
In addition, since the insulating layer has a thickness of (2n-1) / 4 times the wavelength of the light emitted from the light emitting element, the light reflected by the surface of the insulating layer interferes with the light reflected by the light reflecting layer. Can be strengthened.
さらに、本発明の発光装置によれば、上記本発明における発光素子搭載基板と、配線導体に電気的に接続された発光素子とを具備しているため、上記本発明における発光素子搭載基板の特徴を有する、輝度、照度の高い発光装置とすることができる。
Further, according to the light-emitting device of the present invention, because it comprises a light emitting element mounting substrate in the present invention, the wiring conductor and electrically connected to the light emitting element, characterized in the light-emitting element mounting substrate in the present invention the a, can be a bright degree, high intensity light-emitting device.
また、本発明の発光装置によれば、配線導体は一対のものが対向して形成されており、発光素子の一主面に形成された一対の電極が一対の配線導体に接合材を介して電気的に接続されており、光反射層は発光素子の直下に位置するとともに対向する一対の配線導体間に位置するように形成されているため、発光素子から下側に放出された光や、発光装置内で反射してきた光を良好に反射させて光損失が生じるのを有効に防止し、輝度、照度の高い発光装置とすることができる。
According to the light emitting device of the present invention, the pair of wiring conductors are formed to face each other, and the pair of electrodes formed on one main surface of the light emitting element are connected to the pair of wiring conductors through the bonding material. Since it is electrically connected and the light reflecting layer is formed so as to be located immediately below the light emitting element and between a pair of opposing wiring conductors, the light emitted from the light emitting element to the lower side, emitting device satisfactorily reflects the light reflected by and effectively prevented from light losses can be a bright degree, high intensity light-emitting device.
本発明の発光装置を図１に基づいて詳細に説明する。
The light emitting device of the present invention will be described in detail with reference to FIG.
図１は、本発明の発光装置の実施の形態の代表的な例を示す断面図である。この図において１は絶縁基板、２は絶縁基板１に形成され、絶縁基板１の表裏を電気的に導通させる導体柱、３は絶縁基板の表裏面に形成される配線導体で、この配線導体３は、密着金属層３ａ、拡散防止層３ｂおよび主導体層３ｃが順次積層されてなる。４は絶縁基板１上のパターン状の配線導体３同士の隙間に形成される光反射層で、５は反射層４と配線層３とを電気的に絶縁させるための絶縁層である。この発光素子搭載用基板に発光素子が実装されることにより本発明の発光装置が完成するが、図１において、６が発光素子、７が発光素子搭載用基板と発光素子６とを電気的、機械的に接続するＡｕ等から成る導体バンプである。
Figure 1 is a view to cross-sectional view a typical example of the embodiment of the light-emitting device of the present invention. In this figure, 1 is an insulating substrate, 2 is a conductor pillar formed on the insulating substrate 1 and electrically conducting the front and back of the insulating substrate 1, and 3 is a wiring conductor formed on the front and back surfaces of the insulating substrate. Is formed by sequentially laminating an adhesion metal layer 3a, a
絶縁基板１は、例えば酸化アルミニウム（Ａｌ２Ｏ３）質焼結体，窒化アルミニウム（ＡｌＮ）質焼結体，炭化珪素（ＳｉＣ）質焼結体，ガラスセラミックス，窒化珪素（Ｓｉ３Ｎ４）質焼結体等のセラミックスや、石英、ダイヤモンド、サファイア、立方晶窒化硼素、または表面に酸化膜を形成したシリコンのうち少なくとも１種から成る。これらは体積抵抗率ρが1010Ωｍ以上の良好な絶縁性が得られるので絶縁基板１に好適である。 The insulating substrate 1 includes, for example, an aluminum oxide (Al 2 O 3 ) sintered body, an aluminum nitride (AlN) sintered body, a silicon carbide (SiC) sintered body, glass ceramics, and silicon nitride (Si 3 N 4 ). It is composed of at least one of ceramics such as a sintered material, quartz, diamond, sapphire, cubic boron nitride, or silicon having an oxide film formed on the surface. These are suitable for the insulating substrate 1 because good insulating properties with a volume resistivity ρ of 10 10 Ωm or more can be obtained.
なお、絶縁基板１は、窒化アルミニウム質焼結体，炭化珪素質焼結体，ダイヤモンド，表面に酸化膜を形成したシリコンから成るのがより好ましい。これらの絶縁基板１の熱伝導率は40Ｗ／ｍ・Ｋ以上と高いため、絶縁基板１の上面に接着固定される発光素子６が発する熱を絶縁基板１を介して良好に外部に伝達することができるため、発光素子６を長時間にわたり正常かつ安定に、より高輝度、高照度で作動させることが可能となる。 Insulating substrate 1 is more preferably made of an aluminum nitride sintered body, a silicon carbide sintered body, diamond, and silicon having an oxide film formed on the surface. Since the thermal conductivity of these insulating substrates 1 is as high as 40 W / m · K or more, heat generated by the light emitting element 6 bonded and fixed to the upper surface of the insulating substrate 1 can be transmitted to the outside through the insulating substrate 1. Therefore, the light emitting element 6 can be operated normally and stably with higher brightness and higher illuminance over a long period of time.
導体柱２は、絶縁基板１にブラスト法などで貫通穴を形成し、スパッタリング法などによって下地層を形成し、その後めっき法などによって貫通穴を充填されてなる。導体柱２の材料は導通抵抗が小さく、熱伝導がよく、かつめっきで容易に形成できる銅（Ｃｕ）を主成分とするものがよい。 The conductive pillar 2 is formed by forming a through hole in the insulating substrate 1 by a blast method or the like, forming a base layer by a sputtering method or the like, and then filling the through hole by a plating method or the like. The material of the conductor pillar 2 is preferably composed mainly of copper (Cu), which has a small conduction resistance, good thermal conductivity, and can be easily formed by plating.
配線導体３は、メタライズ法やめっき法、薄膜形成法などによって形成された金属から成り、微細化という観点からは薄膜形成法により形成された金属であるのがよい。このような薄膜形成法によって形成された配線導体３としては、例えば、絶縁基板１との密着性を良好にするための密着金属層３ａ、密着金属層３ａと主導体層３ｃとの間で金属成分が拡散するのを防止するための拡散防止層３ｂ、および電気導電性を良好にするとともに光反射性も良好である主導体層３ｃが順次積層されてなるものが用いられる。
The wiring conductor 3 is made of a metal formed by a metallizing method, a plating method, a thin film forming method, or the like, and is preferably a metal formed by a thin film forming method from the viewpoint of miniaturization. As the wiring conductor 3 formed by such a thin film formation method, for example, a close contact metal layer 3a for improving the close contact with the insulating substrate 1, and a metal between the close contact metal layer 3a and the
絶縁基板１の上面に順次積層される密着金属層３ａ、拡散防止層３ｂおよび主導体層３ｃは、蒸着法，スパッタリング法，ＣＶＤ法等の薄膜形成法により積層され、フォトリソグラフィ法，エッチング法，リフトオフ法等の加工方法を組み合わせることによってパターン加工される。
The adhesion metal layer 3a, the
密着金属層３ａは、例えばチタン（Ｔｉ），クロム（Ｃｒ），タンタル（Ｔａ），ニオブ（Ｎｂ），アルミニウム（Ａｌ），ニクロム（Ｎｉ−Ｃｒ）合金または窒化タンタル（Ｔａ２Ｎ）等のうち少なくとも１種類から成るのがよい。また拡散防止層３ｂは、例えば、白金（Ｐｔ），パラジウム（Ｐｄ），ロジウム（Ｒｈ），ルテニウム（Ｒｕ），Ａｌ，ニッケル（Ｎｉ），Ｎｉ−Ｃｒ合金またはＴｉ−タングステン（Ｗ）合金等のうち少なくとも１種類から成るのがよい。さらに主導体層３ｃは、例えば、Ｃｕ、銀（Ａｇ）、金（Ａｕ）、Ａｌ等のうち少なくとも１種類から成るのがよい。なお、主導体層３ｃがＣｕ等のように表面が酸化して光反射率が低下しやすい金属からなる場合は酸化防止のために、例えばＣｕの場合、Ｎｉ,Ａｕ等のめっきを表面に形成した方がよい。
The adhesion metal layer 3a is made of, for example, titanium (Ti), chromium (Cr), tantalum (Ta), niobium (Nb), aluminum (Al), nichrome (Ni—Cr) alloy or tantalum nitride (Ta 2 N). It should consist of at least one type. The
密着金属層３ａの厚さは0.01〜0.2μｍ程度が良い。0.01μｍ未満では、絶縁基板１の上面に密着金属層３ａを強固に密着させることが困難となる傾向にあり、0.2μｍを超えると、密着金属層３ａの成膜時の内部応力によって密着金属層３ａの剥離が生じ易くなる。 The thickness of the adhesion metal layer 3a is preferably about 0.01 to 0.2 μm. If the thickness is less than 0.01 μm, it tends to be difficult to firmly adhere the adhesion metal layer 3 a to the upper surface of the insulating substrate 1. If the thickness exceeds 0.2 μm, the adhesion metal layer is caused by internal stress during the formation of the adhesion metal layer 3 a. The peeling of 3a is likely to occur.
また、拡散防止層３ｂの厚さは0.05〜１μｍ程度が良く、0.05μｍ未満ではピンホール等の欠陥が発生して拡散防止層３ｂとしての機能を果たしにくくなる傾向にあり、１μｍを超えると成膜時の内部応力により拡散防止層３ｂの剥離が生じ易くなる。
Further, the thickness of the
さらに、主導体層３ｃの厚さは0.1〜５μｍ程度が良い。0.1μｍ未満では、電気抵抗が大きくなる傾向にあり、５μｍを超えると成膜時の内部応力により主導体層３ｃの剥離を生じ易くなる。また、Ａｕは貴金属で高価であることから、低コスト化の点で薄く形成することが好ましい。
Further, the thickness of the
光反射層４は、例えばＡｌ，Ａｇ，Ａｕ，Ｔｉ，Ｃｒ，Ｔａ，Ｎｂ，Ｎｉ−Ｃｒ合金，Ｔａ２Ｎ，Ｐｔ，Ｐｄ，Ｒｈ，Ｒｕ，ＮｉまたはＴｉ−Ｗ合金等のうち少なくとも１種類から成るのがよい。また絶縁層５は、ＳｉＯ２，Ｔａ２Ｏ５，ＴｉＯ２などの無機材料、またはエポキシ，ポリイミド，ベンゾシクロブテンなどの有機材料のうち少なくとも１種類から成るのがよい。また無機材料と有機材料を重ねて形成させたり、複合したりしてもよい。 The light reflecting layer 4 is at least one of Al, Ag, Au, Ti, Cr, Ta, Nb, Ni—Cr alloy, Ta 2 N, Pt, Pd, Rh, Ru, Ni, Ti—W alloy, or the like. It is good to consist of. The insulating layer 5 may be made of at least one of an inorganic material such as SiO 2 , Ta 2 O 5 and TiO 2 or an organic material such as epoxy, polyimide and benzocyclobutene. In addition, an inorganic material and an organic material may be overlapped and formed.
絶縁層５は光反射層４と配線導体３とを上下方向において絶縁するためのものである。絶縁層５は透明であってもよく、透明でなくてもよい。絶縁層５が透明でない場合、光反射層５の上面の一部に絶縁層５を形成するとともに、絶縁層５の上面全面に配線導体３を形成するようにするのがよい。これにより、平面視において光反射層４の露出部と配線導体３とが連続して絶縁基板１の上面が金属によって覆われることとなり、光が絶縁基体１を透過することによって光損失が生じるのを有効に防止できる。 The insulating layer 5 is for insulating the light reflecting layer 4 and the wiring conductor 3 in the vertical direction. The insulating layer 5 may be transparent or not transparent. When the insulating layer 5 is not transparent, it is preferable to form the insulating layer 5 on a part of the upper surface of the light reflecting layer 5 and to form the wiring conductor 3 on the entire upper surface of the insulating layer 5. As a result, the exposed portion of the light reflecting layer 4 and the wiring conductor 3 are continuously covered with the metal in a plan view, and light is transmitted through the insulating base 1 to cause light loss. Can be effectively prevented.
また、絶縁層５が透明である場合、光が絶縁層５を透過して光反射層４で反射されるので、絶縁層５は光反射層４の全面に形成されてもよく一部に形成されてもよい。好ましくは、絶縁層５は、発光素子６が発光する光の波長の（２ｎ−１）／４倍（ｎは自然数）であるのがよい。これにより、絶縁層５表面で反射した光と、光反射層４で反射した光とが干渉して光を増強することができる。 In addition, when the insulating layer 5 is transparent, light passes through the insulating layer 5 and is reflected by the light reflecting layer 4, so that the insulating layer 5 may be formed on the entire surface of the light reflecting layer 4 or may be formed in part. May be. Preferably, the insulating layer 5 is (2n−1) / 4 times (n is a natural number) the wavelength of light emitted from the light emitting element 6. Thereby, the light reflected on the surface of the insulating layer 5 and the light reflected on the light reflecting layer 4 interfere with each other to enhance the light.
光反射層４と絶縁層５も、配線層３と同じように蒸着法，スパッタリング法，ＣＶＤ法等の薄膜形成法により積層され、フォトリソグラフィ法，エッチング法，リフトオフ法等の加工方法を組み合わせることによってパターン加工される。 Similarly to the wiring layer 3, the light reflecting layer 4 and the insulating layer 5 are laminated by a thin film forming method such as a vapor deposition method, a sputtering method, or a CVD method, and combined with a processing method such as a photolithography method, an etching method, or a lift-off method. The pattern is processed.
また、主導体層３ｃのさらに上面にアルミニウム膜等の光反射率の高い金属を形成してもよい。
Further, a metal having a high light reflectance such as an aluminum film may be formed on the upper surface of the
そして、上記発光素子搭載基板にＡｕなどから成る導体バンプ７を用いて発光素子６が電気的、機械的に接続されることにより、本発明の発光装置となる。この発光装置において、発光素子６は、ＧａＮ基板をベースに形成されたものでも、サファイア基板をベースに形成されたものでもどちらでもかまわない。また、他の材料をベースにしたものでもよい。 The light emitting element 6 is electrically and mechanically connected to the light emitting element mounting substrate using the conductor bumps 7 made of Au or the like, so that the light emitting device of the present invention is obtained. In this light emitting device, the light emitting element 6 may be either a GaN substrate formed as a base or a sapphire substrate as a base. It may also be based on other materials.
また、発光素子６の配線導体３への電気的接続は、Ａｕなどの導体バンプ７を用いずに、ＡｕＳｎなどのロウ材によってフリップチップ接続することによって行なってもよい。
Further, the electrical connection of the light emitting element 6 to the wiring conductor 3 may be performed by flip chip connection using a brazing material such as AuSn without using the
また、発光素子６から発光される光の波長を変えるために、発光素子６を取り囲むように蛍光体材料を塗布してもよい。さらに透光性の樹脂により発光素子６周辺をモールドしてもよい。 Further, in order to change the wavelength of light emitted from the light emitting element 6, a phosphor material may be applied so as to surround the light emitting element 6. Further, the periphery of the light emitting element 6 may be molded with a translucent resin.
さらに、発光素子６の水平方向に放出される光を垂直方向の光として反射させるために絶縁基板１の上面にリフレクタを設けてもよい。 Further, a reflector may be provided on the upper surface of the insulating substrate 1 in order to reflect light emitted in the horizontal direction of the light emitting element 6 as light in the vertical direction.
なお、本発明は上記実施の形態に限定されず、本発明の要旨を逸脱しない範囲で種々の変更を行うことは何等差し支えない。 Note that the present invention is not limited to the above-described embodiment, and various modifications may be made without departing from the scope of the present invention.
１ ：絶縁基板
３ ：配線導体
４ ：光反射層
５ ：絶縁層
６ ：発光素子
1: Insulating substrate
3: Wiring conductor 4: Light reflection layer 5: Insulating layer 6: Light emitting element
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