JP4605353B2 - Thermal insulation waterproof sheet and method for manufacturing the same - Google Patents
Thermal insulation waterproof sheet and method for manufacturing the same Download PDFInfo
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- JP4605353B2 JP4605353B2 JP2004241602A JP2004241602A JP4605353B2 JP 4605353 B2 JP4605353 B2 JP 4605353B2 JP 2004241602 A JP2004241602 A JP 2004241602A JP 2004241602 A JP2004241602 A JP 2004241602A JP 4605353 B2 JP4605353 B2 JP 4605353B2
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Description
本発明は遮熱用防水シート及びその製造方法に関する。 The present invention relates to a heat-insulating waterproof sheet and a method for producing the same.
建物の内部環境、特に温度環境を保つため、さまざまな遮熱対策がとられている。
例えば、（１）屋上や壁面を緑化し、植物の水分の蒸散作用により室内の温度上昇を抑える。（２）屋上／屋根／外壁に日光反射型塗料仕上げを行う。（３）外壁材、屋根材の表面に光触媒塗料処理を行い、水分を表面に補給し蒸発熱により室内の温度上昇を抑える。などの方法がとられている。
Various heat shielding measures are taken to maintain the internal environment of the building, especially the temperature environment.
For example, (1) greening the rooftop and walls, and suppressing the rise in indoor temperature due to the transpiration of plant water. (2) Apply sunlight-reflective coating on the roof / roof / outer wall. (3) The surface of the outer wall material and the roof material is subjected to photocatalyst coating treatment, water is replenished to the surface, and the temperature rise in the room is suppressed by the heat of evaporation. Such a method is taken.
しかしながら、前記従来技術には以下の列記する問題点があった。
（１）前記の緑化による方法は、植物の維持管理に多大な費用と労力を必要とする。また、屋上では、土壌の重量、防水層の耐久性、防水の改修時における土壌の撤去等に多くの問題があった。
（２）塗料による方法は、塗料の耐久性により、数年に一度の塗り替えが必要、汚れの付着により効果が低減する。
（３）光触媒による方法は、水分の薄膜を全体に均一に形成するのが困難かつ多大な費用と装置が必要となる。
However, the prior art has the following problems.
(1) The above-mentioned greening method requires a great deal of cost and labor for plant maintenance. On the rooftop, there were many problems with soil weight, durability of the waterproof layer, and removal of soil during waterproofing renovation.
(2) The paint method requires repainting once every several years due to the durability of the paint, and the effect is reduced due to the adhesion of dirt.
(3) In the photocatalytic method, it is difficult to form a thin film of moisture uniformly on the whole, and a large amount of cost and apparatus are required.
本発明は前記従来技術の問題点を解決するものであり、Ｎ型半導体、特に焼成して得られた焼成Ｎ型半導体が熱エネルギーを受けたとき、半導体が金属に近い性質を有するようになる現象を利用して開発されたものであって、下記構成の遮熱用防水シート及びその製造方法である。
（１）基材の防水シートの表面又は裏面のいずれか一方の面あるいは表面と裏面の両面に、Ｎ型半導体を付着させてなることを特徴とする遮熱用防水シート。
（２）基材の防水シートが、アスファルトルーフィングフェルト、改質アスファルトルーフィングフェルトであることを特徴とする前項（１）記載の遮熱用防水シート。
（３）アスファルトルーフィングフェルト、改質アスファルトルーフィングフェルト等の基材の防水シートとアスファルト層との間にＮ型半導体を介在させてなることを特徴とする前項（１）又は（２）に記載の遮熱性防水シート。
（４）Ｎ型半導体を含む塗料が、予め工場で防水シートに塗布乾燥されたものであることを特徴とする前項（１）〜（３）のいずれか１項に記載の遮熱性防水シート。
（５）砂付き防水シートの砂粒が、Ｎ型半導体付着処理を施したものであることを特徴とする前項（１）〜（４）のいずれか１項に記載の遮熱性防水シート。
（６）基材の防水シートが、アスファルトフェルト、加硫ゴムシート、ＴＰＥ（熱可塑性エラストマー）シート、あるいはＴＰＯ（熱可塑性ポリオレフィン）シートから選ばれたいずれか１種であることを特徴とする前項（１）〜（５）のいずれか１項に記載の遮熱性防水シート。
（７）遮熱用防水シートが、防水シートを施工した後にＮ型半導体を混入した塗料を現場で塗布したものであることを特徴とする前項（１）〜（６）のいずれか１項に記載の遮熱用防水シート。
（８）Ｎ型半導体が防水シートを構成する素材に混入されてなることを特徴とする前項（１）〜（７）のいずれか１項に記載の遮熱用防水シート。
（９）Ｎ型半導体が、焼成Ｎ型半導体であることを特徴とする前項（１）〜（８）のいずれか１項に記載の遮熱用防水シート。
The present invention solves the above-mentioned problems of the prior art, and when a N-type semiconductor, particularly a fired N-type semiconductor obtained by firing, receives thermal energy, the semiconductor has properties close to metals. The heat-insulating waterproof sheet having the following configuration and a method for manufacturing the same have been developed by utilizing the phenomenon.
(1) An N-type semiconductor is attached to either one of the front surface or the back surface of the waterproof sheet as a base material, or both the front and back surfaces.
(2) The waterproof sheet for heat shielding as described in (1) above, wherein the waterproof sheet of the base material is asphalt roofing felt or modified asphalt roofing felt.
(3) As described in (1) or (2) above, wherein an N-type semiconductor is interposed between a waterproof sheet of a base material such as asphalt roofing felt or modified asphalt roofing felt and an asphalt layer Thermal barrier sheet.
(4) The heat-insulating waterproof sheet according to any one of (1) to (3) above, wherein the paint containing an N-type semiconductor is previously applied to a waterproof sheet at a factory and dried.
(5) The thermal barrier waterproof sheet according to any one of (1) to (4) above, wherein the sand particles of the waterproof sheet with sand are subjected to an N-type semiconductor adhesion treatment.
(6) The above-mentioned item, wherein the waterproof sheet of the base material is any one selected from asphalt felt, vulcanized rubber sheet, TPE (thermoplastic elastomer) sheet, or TPO (thermoplastic polyolefin) sheet. (1) The heat-shielding waterproof sheet according to any one of (5).
(7) In any one of the preceding items (1) to (6), the waterproof sheet for heat insulation is a paint applied with an N-type semiconductor after the waterproof sheet is applied and applied on site. The thermal insulation waterproof sheet as described.
(8) The thermal insulation waterproof sheet according to any one of (1) to (7) above, wherein an N-type semiconductor is mixed in a material constituting the waterproof sheet.
(9) The thermal insulation waterproof sheet according to any one of (1) to (8), wherein the N-type semiconductor is a fired N-type semiconductor.
本発明の遮熱性防水シートは、従来の遮熱材が日光が直接当たる面へ施工しなければならないことに対して、熱エネルギーを受ける位置であれば何処に施工してもよいものである。
一般住宅を例にとれば、住宅の屋根は通常合板下地に、アスファルトルーフィングが貼り付けられ、その上に屋根材（瓦、セメント成型板、金属瓦など）が施される。
本発明の遮熱性防水シートをアスファルトルーフィングの代わりに貼り付けることにより、遮熱効果が得られる。
また、陸屋根には、アスファルト防水、シート防水など、各種の防水が施工されるが、これらの防水材に、本発明の遮熱性防水シートを用いれば、防水シートの温度上昇が抑えられ、防水シートの寿命が延びるばかりでなく、建物内部の温度上昇が抑えられる。
いずれも、日光が直接当たる面に施工しなくてもよいため、効果は長期間持続する。もちろん直射日光に当たる面でも同様の効果が得られ、その場合汚れがあっても効果は低減しない。
表面に使用する必要がなく、屋根葺き材の下側に通常の下葺き材の施工のみで、また壁材の内側に通常の下張り材の施工のみで遮熱性のある屋根あるいは壁とすることができる。
また、塗料として表面にある必要がないので防水層の耐久性と同様の遮熱効果の維持性がある。
塗料として使用する場合は、熱反射用の白色塗料にする必要がなく、カラー塗料が採用でき、また汚れによる効果の低減がない。
The heat-insulating waterproof sheet of the present invention may be applied anywhere as long as the conventional heat-insulating material must be applied to the surface directly exposed to sunlight as long as it is in a position to receive heat energy.
Taking an ordinary house as an example, the roof of a house is usually provided with asphalt roofing on a plywood substrate, and roofing material (tile, cement-molded board, metal tile, etc.) is applied thereon.
By sticking the heat-shielding waterproof sheet of the present invention instead of asphalt roofing, a heat-shielding effect can be obtained.
In addition, various waterproofing such as asphalt waterproofing and sheet waterproofing is applied to the flat roof. If the heat insulating waterproof sheet of the present invention is used for these waterproofing materials, the temperature rise of the waterproof sheet can be suppressed, and the waterproof sheet This not only extends the service life of the building but also suppresses the temperature rise inside the building.
In any case, the effect does not need to be applied to a surface that is directly exposed to sunlight, so that the effect lasts for a long time. Of course, the same effect can be obtained even in direct sunlight. In this case, the effect is not reduced even if there is dirt.
There is no need to use it on the surface, and it is necessary to construct a roof or wall with heat insulation only by applying ordinary underlaying material on the underside of the roofing material and only by applying ordinary underlaying material on the inside of the wall material. it can.
Moreover, since it does not need to be on the surface as a paint, it has the same heat shielding effect as the durability of the waterproof layer.
When used as a paint, it is not necessary to use a white paint for heat reflection, a color paint can be adopted, and the effect due to dirt is not reduced.
本発明の遮熱用防水シートの構成は、基材の防水シートの表面又は裏面のいずれか一方の面あるいは表面と裏面の両面に焼成Ｎ型半導体を付着させてなるものであるが、
本発明の遮熱性防水シートが遮熱効果を発揮する理由を説明する。
その理由は完全に解明されてはいないが、以下のように考えられる。
Ｎ型半導体、特に焼成Ｎ型半導体を防水シートに付着させることにより、照射された熱に対して防水シートに電気抵抗が生じ、電気抵抗が下がるため、熱エネルギー波長をより長い波長に変えることができる。波長を長く変えることにより熱エネルギーが緩和され、一般の防水シートに対し、表面温度、裏面温度の差をつけることが可能となる。
The structure of the heat-insulating waterproof sheet of the present invention is formed by attaching a fired N-type semiconductor to either the front surface or the back surface of the base waterproof sheet, or both the front and back surfaces,
The reason why the heat-shielding waterproof sheet of the present invention exhibits a heat-shielding effect will be described.
The reason for this is not fully understood, but is considered as follows.
By attaching an N-type semiconductor, particularly a fired N-type semiconductor, to the waterproof sheet, an electrical resistance is generated in the waterproof sheet with respect to the irradiated heat, and the electrical resistance is lowered, so that the thermal energy wavelength can be changed to a longer wavelength. it can. By changing the wavelength longer, the thermal energy is relaxed, and it becomes possible to give a difference between the surface temperature and the back surface temperature of a general waterproof sheet.
本発明のＮ型半導体は、粒径０．１〜１０μmの粉黛が好ましく、防水シート表面等に付着させる手段は、予め半導体粉黛を分散させた合成樹脂エマルジョン塗料を、防水シート製造時に塗布乾燥させる。
半導体の粒径は０．１μm未満ではその製造コストが高く不経済であり、１０μmを越えると大きすぎて遮熱効果が低下することと、塗料に分散させた場合、沈降分離しやすくなる。よって、半導体の粒径は０．１〜１０μm、特に０．５〜３μmが好ましい。
本発明で用いられるＮ型半導体としては、焼成により不純物をドーピングして得られた焼成Ｎ型半導体が特に好ましいものである。
なお、本発明の実施に当たっては、建築物等の大面積のものに適用するにはコスト面の考慮が必要である。また、空気中へ曝されるため毒性のない材料が好ましい。
The N-type semiconductor of the present invention is preferably a powder with a particle size of 0.1 to 10 μm, and the means for adhering to the surface of the waterproof sheet is to apply and dry a synthetic resin emulsion paint in which the semiconductor powder is dispersed in advance when the waterproof sheet is manufactured. .
If the particle size of the semiconductor is less than 0.1 μm, its production cost is high and uneconomical, and if it exceeds 10 μm, it is too large and the heat shielding effect is lowered, and when dispersed in a paint, it tends to settle and separate. Therefore, the particle size of the semiconductor is preferably 0.1 to 10 μm, particularly preferably 0.5 to 3 μm.
As the N-type semiconductor used in the present invention, a fired N-type semiconductor obtained by doping impurities by firing is particularly preferable.
In carrying out the present invention, it is necessary to consider the cost in order to apply to a large area such as a building. Moreover, since it is exposed to air, a non-toxic material is preferable.
アスファルトルーフィングの製造を例にとり説明すると、アスファルトルーフィングは、基材（紙と繊維の混合原紙、合成樹脂不織布、合成繊維メッシュ、紙）へ、アスファルトを浸透させ、この後アスファルトを表裏面へ塗覆し、アスファルトの付着を防ぐため鉱物質粉粒体を散布付着させて製造される。
本発明は、鉱物質粉粒体を付着後、Ｎ型半導体を含む合成樹脂エマルジョン塗料を通常の印刷機で所定量塗布し乾燥させる。
塗布量は、半導体の粉黛が、好ましくはルーフィングシート１ｍ2当たり１〜５ｇの半導体が付着するように調節される。
１ｇ／ｍ2未満では効果が少なく、５ｇ／ｍ2を越えると、経済性が悪くなる。
浸透用や塗覆用に使用するアスファルトが改質アスファルトの場合、改質アスファルトルーフィングシートであり、一般に厚さは１．５〜４ｍｍ程度の製品である。
製造方法はアスファルトルーフィングと同様である。
前記製造工程中、アスファルトを基材に浸透後、Ｎ型半導体粉黛をそのまま散布し、この後アスファルトを塗覆することにより遮熱性防水シートが製造される。Ｎ型半導体の散布量は前記と同様に１ｍ２当たり１〜５ｇが最適である。
また、前記製造工程中の鉱物質粉粒体を付着させる場合、予め鉱物質粉粒体にＮ型半導体を含む塗料を塗布乾燥させ、それを鉱物質粉粒体として使用してもよい。
Taking asphalt roofing as an example, asphalt roofing penetrates asphalt into the base material (mixed paper of paper and fiber, synthetic resin nonwoven fabric, synthetic fiber mesh, paper), and then coats the asphalt on the front and back surfaces. In order to prevent asphalt adhesion, it is manufactured by spraying and adhering mineral powder.
In the present invention, after depositing mineral powders, a predetermined amount of a synthetic resin emulsion paint containing an N-type semiconductor is applied and dried using a normal printing machine.
The coating amount is adjusted so that the semiconductor powder is preferably attached to 1 to 5 g of semiconductor per 1 m 2 of the roofing sheet.
If it is less than 1 g / m 2 , the effect is small, and if it exceeds 5 g / m 2 , the economical efficiency is deteriorated.
When the asphalt used for infiltration or coating is a modified asphalt, it is a modified asphalt roofing sheet, generally a product having a thickness of about 1.5 to 4 mm.
The manufacturing method is the same as that for asphalt roofing.
During the manufacturing process, after asphalt is infiltrated into the base material, the N-type semiconductor powder is sprayed as it is, and then the asphalt is coated to manufacture a heat insulating waterproof sheet. The amount of the N-type semiconductor sprayed is optimally 1 to 5 g per 1 m 2 as described above.
Moreover, when making the mineral substance granular material in the said manufacturing process adhere, you may apply | coat and dry the coating material containing an N-type semiconductor to a mineral substance granular body beforehand, and may use it as a mineral substance granular material.
本発明の具体例としての、遮熱用ルーフィング材の断面構造としては、図１〜図３に示す断面のものが例示される。
すなわち、図１に示すものは、基材２を夾んで表裏にアスファルト層３，３’が形成され、上面のアスファルト層３の表面にＮ型半導体１層が着設されて構成されている。
図２に示すものは、基材２の表裏面にＮ型半導体を混入させたアスファルト４を着設させた構成のものである。
図３に示すものは、基材１の表裏面にＮ型半導体を着設し、それらの表面にアスファルト層３，３’を着設した構成したものである。
Ｎ型半導体は粉黛（粉墨）で粒子の大きさは、０．１〜１０μm程度が好ましい。
Ｎ型半導体の付着量は多いほど好ましいが、０．８ｇ／ｍ2以上であれば、遮熱効果が発現される。
各種熱エネルギーをＮ型半導体のエネルギー拡散作用により減衰させるため、直射日光が当たらなくとも遮熱効果が発揮される。
本発明の遮熱用ルーフィングを適用する具体例として下記が挙げられる。
（１）図５に斜視図を示す、戸建て住宅の屋根葺き材（瓦、金属瓦、スレート瓦など）５の下に、本発明の遮熱性防水シート１０を敷き込む下葺用ルーフィングとしての使用。
（２）集合住宅、事務所などの非住宅用ビルの防水用ルーフィングとしての使用。
As a cross-sectional structure of the heat-insulating roofing material as a specific example of the present invention, the cross-sectional structure shown in FIGS.
That is, the structure shown in FIG. 1 is constructed by forming asphalt layers 3 and 3 ′ on both sides of the base material 2, and an N-type semiconductor 1 layer on the surface of the upper asphalt layer 3.
The structure shown in FIG. 2 has a configuration in which asphalt 4 mixed with an N-type semiconductor is attached to the front and back surfaces of the substrate 2.
FIG. 3 shows a structure in which N-type semiconductors are attached to the front and back surfaces of the substrate 1 and asphalt layers 3 and 3 ′ are attached to the surfaces thereof.
The N-type semiconductor is powdered rice cake (powder), and the particle size is preferably about 0.1 to 10 μm.
The larger the amount of N-type semiconductor attached, the better. However, if it is 0.8 g / m 2 or more, a heat shielding effect is exhibited.
Since various types of thermal energy are attenuated by the energy diffusion action of the N-type semiconductor, the heat shielding effect is exhibited even when not exposed to direct sunlight.
Specific examples to which the heat shielding roofing of the present invention is applied include the following.
(1) Use as a roofing for lower roofs in which the heat-insulating waterproof sheet 10 of the present invention is laid under a roofing material (tile, metal tile, slate tile, etc.) 5 of a detached house whose perspective view is shown in FIG. .
(2) Use as roofing for waterproofing non-residential buildings such as apartment houses and offices.
本発明の実施例を説明する。
実施例１（工場ライン）：焼成Ｎ型半導体を混入した塗料を予め工場でルーフィングへ塗布し、それを施工する。
１９０ｇ／ｍ2の基材（ラグ原紙）にアスファルト（ストレートアスファルト）を２００ｍｇ／ｍ2含浸させてアスファルトフェルトを製造した後、その面にブロンアスファルトをコーティングし、さらに表裏面に珪砂を付着させて砂付きアスファルトルーフィングを製造した。
次に、得られたアスファルトルーフィングの表面に焼成Ｎ型半導体を混合したエマルジョン型塗料をロールコーターにより転写（１１ｇ／ｍ2）した。なお、焼成Ｎ型半導体の混合量はエマルジョン型塗料の固形分に対し２０％添加混合したものと、４０％を添加混合したものを用意した。
図４Ａに示す断面のごとき構造の、焼成Ｎ型半導体混入のエマルジョンを塗布したアスファルトルーフィング１０上に屋根葺き材のカラー鉄板５を密着させた試験体を屋外に暴露し日射を当て、カラー鉄板５表面の測定点ａとアスファルトルーフィング下面の測定点ｂで温度を測定した。
結果は、表１に示すとおりであった。
Examples of the present invention will be described.
Example 1 (factory line): A paint mixed with a fired N-type semiconductor is applied to the roofing in advance at the factory and then applied.
After asphalt felt was produced by impregnating 200 mg / m 2 of asphalt (straight asphalt) into a 190 g / m 2 base material (rug base paper), bron asphalt was coated on the surface, and silica sand was adhered to the front and back surfaces. Asphalt roofing with sand was produced.
Next, an emulsion type paint in which a fired N-type semiconductor was mixed on the surface of the obtained asphalt roofing was transferred (11 g / m 2 ) using a roll coater. In addition, the mixing amount of the baking N-type semiconductor prepared what added and mixed 20% with respect to solid content of an emulsion type coating material, and what added and mixed 40%.
4A, a test specimen in which a colored iron plate 5 of a roofing material is adhered to an asphalt roofing 10 coated with an emulsion mixed with a baked N-type semiconductor, exposed to the outdoors, exposed to sunlight, and colored iron plate 5 The temperature was measured at measurement point a on the surface and measurement point b on the bottom of the asphalt roofing.
The results were as shown in Table 1.
実施例２（手作り）：
実施例１のアスファルトフェルトに７０μmの目開きの篩を用いて、焼成Ｎ型半導体を表面に散布した。焼成Ｎ型半導体の散布量は２ｇ／ｍ2のものと、４ｇ／ｍ2のものを用意した。
手作りしたアスファルトルーフィング１０上にカラー鉄板５を密着させた図４Ａに示す断面のごとき構造の試験体を屋外に暴露し日射を当て、カラー鉄板５表面の測定点ａとアスファルトルーフィング下面の測定点ｂで温度を測定した。
結果は表２に示すとおりであった。
Example 2 (handmade):
The asphalt felt of Example 1 was sprayed with a fired N-type semiconductor on the surface using a sieve having an opening of 70 μm. The dispersion amount of the fired N-type semiconductor was 2 g / m 2 and 4 g / m 2 .
A test specimen having a cross-sectional structure as shown in FIG. 4A, in which a colored iron plate 5 is closely attached to a handmade asphalt roofing 10, is exposed to the sun and exposed to sunlight. The temperature was measured at
The results were as shown in Table 2.
以上のように、防水用ルーフィングに焼成Ｎ型半導体を予め混入したエマルジョンを工場ラインで付着（焼成Ｎ型半導体量は１ｇ／ｍ2）させたものを、カラー鉄板の下葺き材として使用した場合、通常の防水用ルーフィングを使用したものに比べて室内側で約７℃低くなった。
As described above, when an emulsion in which a fired N-type semiconductor is premixed in a waterproof roofing is adhered on the factory line (the amount of fired N-type semiconductor is 1 g / m 2 ) as the underlaying material for the color iron plate It was about 7 ° C. lower on the indoor side than that using ordinary waterproof roofing.
実施例３（工場ライン）：
（１）実施例１のアスファルトフェルトの表面にパウダースプレーノズルを用いて４ｇ／ｍ２の焼成Ｎ型半導体を噴霧し、直後にブロンアスファルトをコーティングし、表裏面に珪砂を付着させアスファルトルーフィングを製造した。
図４Ａに示す断面のごとき構造で、温度測定した結果は、表３−１に示すとおりであった。
Example 3 (factory line):
(1) Asphalt roofing is produced by spraying 4 g / m 2 of fired N-type semiconductor onto the surface of the asphalt felt of Example 1 using a powder spray nozzle, coating Bron asphalt immediately afterwards, and attaching silica sand to the front and back surfaces. did.
The result of the temperature measurement with a structure like the cross section shown in FIG. 4A was as shown in Table 3-1.
（２）３枚の１４０ｇ／ｍ２の合成繊維不織布に、防水工事用アスファルト３種を各々含浸（２００ｇ／ｍ2）させたアスファルトフェルトに、（１）と同様に焼成Ｎ型半導体を噴霧し、直後に防水工事用アスファルト３種をコーティングし、かつその表面（焼成Ｎ型半導体を噴霧した側）に１〜１．７ｍｍの大きさの砕石を圧着させ、また裏面に珪砂を付着させて砂付きストレッチルーフィングを製造した。
（３）１５５ｇ／ｍ2の合成繊維不織布にブロンアスファルトを含浸（２５０ｇ／ｍ2）させたアスファルトフェルトに、（１）と同様に焼成Ｎ型半導体を噴霧し、直後に改質アスファルト（ストレートアスファルトにスチレンブタジエンスチレンブロック共重合体を混合したもの）をコーティングし、かつその表面（焼成Ｎ型半導体を噴霧した側）に１〜３ｍｍのスレートチップを隙間なく圧着させ、裏面にポリプロピレンフィルム（厚さ７μm）を貼り付けて、改質アスファルトルーフィングシート（厚さ４ｍｍ）を製造した。
(2) A fired N-type semiconductor is sprayed in the same manner as in (1) on asphalt felt impregnated with three types of 140 g / m 2 synthetic fiber nonwoven fabric with three types of asphalt for waterproofing construction (200 g / m 2 ). Immediately afterwards, three types of asphalt for waterproofing are coated, and crushed stone with a size of 1 to 1.7 mm is pressure-bonded to the surface (side where the fired N-type semiconductor is sprayed), and silica sand is attached to the back surface to provide sand Stretch roofing was produced.
(3) A fired N-type semiconductor is sprayed on the asphalt felt impregnated with bron asphalt (250 g / m 2 ) in a synthetic fiber nonwoven fabric of 155 g / m 2 in the same manner as in (1), and immediately after the modified asphalt (straight asphalt A styrene butadiene styrene block copolymer) and a 1 to 3 mm slate chip on the surface (the side sprayed with the fired N-type semiconductor) without any gaps, and a polypropylene film (thickness) 7 μm) was applied to produce a modified asphalt roofing sheet (thickness 4 mm).
実施例３の（２）及び（３）の場合の断面図を示す構造の図４Ｂの試験体に熱照射し、砂６表面の測定点ａとアスファルトルーフィング下面の測定点ｂで温度を測定した。すなわち、工場ラインでアスファルトルーフィング基材上に、４ｍｇ／ｍ2の割合で焼成Ｎ型半導体を付着させ、直後にアスファルトコーティングし表面に砂等を圧着させたアスファルトルーフィング（砂付アスファルトルーフィング）である。
結果は表３−２、及び表３−３に示すとおりであった。
4B having a structure showing the cross-sectional views in the case of (2) and (3) of Example 3 was irradiated with heat, and the temperature was measured at the measurement point a on the sand 6 surface and the measurement point b on the asphalt roofing bottom surface. . That is, asphalt roofing (sand-fed asphalt roofing) in which a fired N-type semiconductor is deposited on an asphalt roofing base material at a rate of 4 mg / m 2 in a factory line, and immediately after that, asphalt coating is performed and sand is pressed onto the surface. .
The results were as shown in Table 3-2 and Table 3-3.
本発明の遮熱性防水シートは、屋根葺き用のアスファルトルーフィングや、外壁用の遮熱性防水シート、その他に適用できる。 The heat-insulating waterproof sheet of the present invention can be applied to asphalt roofing for roofing, heat-insulating waterproof sheets for outer walls, and others.
１：焼成Ｎ型半導体、
２：基材、
３，３’：アスファルト層、
４，４’：焼成Ｎ型半導体を混入したアスファルト層、
５：屋根葺き材、
６：砂、
１０：本発明の遮熱性防水シート（遮熱用ルーフィング）
1: Firing N-type semiconductor
2: base material,
3, 3 ': asphalt layer,
4, 4 ': asphalt layer mixed with baked N-type semiconductor,
5: Roofing material,
6: Sand,
10: Heat-shielding waterproof sheet of the present invention (heat-shielding roofing)
Claims (9)
The heat-insulating waterproof sheet according to claim 1, wherein the N-type semiconductor is a fired N-type semiconductor.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001107480A (en) * | 1999-10-08 | 2001-04-17 | Nippon Kankyo Kenkyusho:Kk | Heat shield sheet |
| JP2002086067A (en) * | 2000-09-13 | 2002-03-26 | Matsushita Electric Works Ltd | Method of forming coating film |
| JP2004155026A (en) * | 2002-11-06 | 2004-06-03 | Achilles Corp | Heat shielding (heat insulating) technique and heat shielding material |
| JP2005299122A (en) * | 2004-04-07 | 2005-10-27 | Sony Corp | Solar light insulating material |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001107480A (en) * | 1999-10-08 | 2001-04-17 | Nippon Kankyo Kenkyusho:Kk | Heat shield sheet |
| JP2002086067A (en) * | 2000-09-13 | 2002-03-26 | Matsushita Electric Works Ltd | Method of forming coating film |
| JP2004155026A (en) * | 2002-11-06 | 2004-06-03 | Achilles Corp | Heat shielding (heat insulating) technique and heat shielding material |
| JP2005299122A (en) * | 2004-04-07 | 2005-10-27 | Sony Corp | Solar light insulating material |
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