JP4604673B2 - フォトダイオードの作製方法 - Google Patents
フォトダイオードの作製方法 Download PDFInfo
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- JP4604673B2 JP4604673B2 JP2004331837A JP2004331837A JP4604673B2 JP 4604673 B2 JP4604673 B2 JP 4604673B2 JP 2004331837 A JP2004331837 A JP 2004331837A JP 2004331837 A JP2004331837 A JP 2004331837A JP 4604673 B2 JP4604673 B2 JP 4604673B2
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- photodiode
- type impurity
- diffusion region
- inp
- Prior art date
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- 238000000034 method Methods 0.000 title claims description 25
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000012535 impurity Substances 0.000 claims description 53
- 238000009792 diffusion process Methods 0.000 claims description 50
- 239000010410 layer Substances 0.000 claims description 41
- 230000018044 dehydration Effects 0.000 claims description 25
- 238000006297 dehydration reaction Methods 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 24
- 239000004065 semiconductor Substances 0.000 claims description 23
- 238000010438 heat treatment Methods 0.000 claims description 22
- 150000001875 compounds Chemical class 0.000 claims description 12
- 239000006011 Zinc phosphide Substances 0.000 claims description 7
- HOKBIQDJCNTWST-UHFFFAOYSA-N phosphanylidenezinc;zinc Chemical compound [Zn].[Zn]=P.[Zn]=P HOKBIQDJCNTWST-UHFFFAOYSA-N 0.000 claims description 7
- 229940048462 zinc phosphide Drugs 0.000 claims description 7
- IGPFOKFDBICQMC-UHFFFAOYSA-N 3-phenylmethoxyaniline Chemical compound NC1=CC=CC(OCC=2C=CC=CC=2)=C1 IGPFOKFDBICQMC-UHFFFAOYSA-N 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 2
- 239000002344 surface layer Substances 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 1
- 238000007789 sealing Methods 0.000 claims 1
- 239000011701 zinc Substances 0.000 description 23
- 239000002994 raw material Substances 0.000 description 19
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 18
- 230000003287 optical effect Effects 0.000 description 14
- 238000010521 absorption reaction Methods 0.000 description 9
- 239000002775 capsule Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000004891 communication Methods 0.000 description 6
- 238000005498 polishing Methods 0.000 description 6
- 238000002161 passivation Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 229910052725 zinc Inorganic materials 0.000 description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 4
- 229910052793 cadmium Inorganic materials 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000879 optical micrograph Methods 0.000 description 2
- 125000004437 phosphorous atom Chemical group 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- RHKSESDHCKYTHI-UHFFFAOYSA-N 12006-40-5 Chemical compound [Zn].[As]=[Zn].[As]=[Zn] RHKSESDHCKYTHI-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical group [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- FSIONULHYUVFFA-UHFFFAOYSA-N cadmium arsenide Chemical compound [Cd].[Cd]=[As].[Cd]=[As] FSIONULHYUVFFA-UHFFFAOYSA-N 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Description
Zn2P3→3Zn+(1/2)P4
の反応が顕著に進む傾向にある。すなわち、800℃より高いの温度で脱水熱処理したそのp型不純物原料は燐が抜けて亜鉛が主要成分となっている。したがって、そのような高温で脱水熱処理されたp型不純物原料を用いて真空カプセル内でInPウエハにp型拡散処理を行えば、カプセル内においてp型不純物原料から供給される燐の蒸気圧が不十分となる。その結果、InPウエハ表面からの燐原子の離脱が顕著になって、表面荒れを生じやすくなる。このような観点から、p型不純物原料の脱水熱処理温度は800℃以下であることが望まれる。
Claims (1)
- III−V族化合物半導体からなるフォトダイオードの作製方法であって、
InPの最外表面層を有するn型のIII−V族化合物半導体層を堆積し、
水素、不活性ガス、および真空のいずれかの雰囲気下において燐化亜鉛と燐化カドミウムのいずれかを含むp型不純物原料を520℃以上で800℃以下の温度の下で脱水熱処理し、
前記n型III−V族半導体層と前記脱水熱処理されたp型不純物原料とを真空容器内に封止し、
前記封止された真空容器を加熱することによって前記p型不純物原料を気化させて前記n型III−V族半導体層の表面から所定深さに至るp型の部分的拡散領域を形成する工程を含むことを特徴とするフォトダイオードの作製方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004331837A JP4604673B2 (ja) | 2004-11-16 | 2004-11-16 | フォトダイオードの作製方法 |
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JP2004331837A JP4604673B2 (ja) | 2004-11-16 | 2004-11-16 | フォトダイオードの作製方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006147635A JP2006147635A (ja) | 2006-06-08 |
JP4604673B2 true JP4604673B2 (ja) | 2011-01-05 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2004331837A Expired - Fee Related JP4604673B2 (ja) | 2004-11-16 | 2004-11-16 | フォトダイオードの作製方法 |
Country Status (1)
Country | Link |
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JP (1) | JP4604673B2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112885934B (zh) * | 2019-11-29 | 2022-06-14 | 山东浪潮华光光电子股份有限公司 | 一种提高产品良率的led芯片制备方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60158620A (ja) * | 1983-12-21 | 1985-08-20 | エイ・ティ・アンド・ティ・コーポレーション | デバイスの製造方法 |
JPS63120478A (ja) * | 1986-11-10 | 1988-05-24 | Nec Corp | フオトダイオ−ド |
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2004
- 2004-11-16 JP JP2004331837A patent/JP4604673B2/ja not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60158620A (ja) * | 1983-12-21 | 1985-08-20 | エイ・ティ・アンド・ティ・コーポレーション | デバイスの製造方法 |
JPS63120478A (ja) * | 1986-11-10 | 1988-05-24 | Nec Corp | フオトダイオ−ド |
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