JP4593969B2 - Wiring manufacturing method and display device manufacturing method - Google Patents

Description

  The present invention relates to a technique for manufacturing a wiring and a conductive layer, and more particularly to a technique for manufacturing a wiring, a conductive layer, a semiconductor device, and a display device by using a droplet discharge method over an insulating surface.

  Thin film transistors (TFTs) formed using a thin film over an insulating surface are widely applied to integrated circuits and the like. Among them, display panels using TFTs have greatly expanded their use especially to large display devices, and further demands for higher screen size, higher aperture ratio, higher reliability, and larger size are increasing. ing.

  In addition, research on these requirements is also progressing, and from now on, it is becoming an indispensable condition to make products more excellent in terms of cost as well as to meet those requirements. .

  As a method for manufacturing a wiring in such a thin film transistor, there is a method in which a film of a conductive layer is formed over the entire surface of a substrate, and then an etching process is performed using a mask (see Patent Document 1).

JP 2002-359246 A

  In addition, there is an increasing demand for higher functionality, and attempts have been made to simultaneously form a drive circuit, a CPU, and the like on the same substrate as the panel.

  When wiring is formed as in the above-mentioned Patent Document 1, when an ICP etching apparatus is taken as an example, etching such as bias power density, ICP power density, pressure, total flow of etching gas, oxygen addition rate, and temperature of the lower electrode is performed. The selection ratio between the resist and the conductive layer varies depending on conditions, and the width and length of the conductive layer in the substrate may vary.

  Further, in the case of performing an etching process, a process for manufacturing a mask using a photoresist or the like is necessary, and thus the process becomes long. Furthermore, after forming a conductive layer once on the entire surface, an etching process is performed so as to obtain a desired shape, and thus a wasteful material is generated. In particular, the resist material used for patterning may be very expensive, which is one factor that greatly affects the cost of the final product.

  In addition, the material used for the part to be etched or not used is removed to become a waste liquid. In recent years, environmental awareness has increased, and it is essential to perform appropriate processing and dispose of it properly. However, this requires a large capital investment and cost. This is also a major obstacle to aiming at lower prices for products. Of course, since these materials are only thrown away, it is a waste of resources.

  Such a problem becomes a more serious problem when wiring is formed on a large meter-angle substrate.

  On the other hand, recently, a method of directly patterning on a substrate using a droplet discharge method has been studied. In this regard, for example, a method of directly forming a wiring or an electrode pattern on a substrate using a special ink in which ultrafine metal particles are dispersed in a solution is considered. In addition, instead of patterning using a mask as in the conventional photolithography method, a method is also proposed in which a resist is discharged by a direct droplet discharge method to form a pattern.

  However, when the wiring is formed using the droplet discharge method, it may be considered that the contact hole cannot be completely filled or a step is generated. If the contact hole is not completely filled, there is a possibility that the contact at that portion cannot be taken and a broken state may occur. In addition, even if the contact is taken, there is a risk that the resistance may increase or the gas (air, etc.) taken in may expand and cause inconvenience when heated in a later process. . Concerning the level difference, the layers are stacked with a large level difference, and when the concave part and the convex part overlap each other, the level difference becomes large and eventually causes a defect such as disconnection. These are major problems in terms of reliability.

  Furthermore, the phenomenon from when the droplet containing the conductive composition lands on the substrate until it becomes a thin film pattern is very complicated, and the drying process is greatly related to its characteristics. That is, after the landed droplet dries, the characteristics change depending on what shape it takes, which depends on the drying process of the droplet. It is very difficult to control this drying process, and it becomes one big subject for providing a stable product.

  In view of such a problem, an object of the present invention is to provide a wiring forming method for providing a semiconductor device having excellent reliability and cost performance. It is another object of the present invention to provide a method for manufacturing a semiconductor device and a method for manufacturing a display device using the wiring formation method of the present invention.

Therefore, the present invention reflows after forming the wiring in a wiring manufacturing method in which the wiring is formed by a droplet discharge method.

  Accordingly, there is provided a wiring formation method, a semiconductor device manufacturing method, and a display device manufacturing method for providing a semiconductor device that can be flattened, repaired, and arranged in wiring shape, and that is excellent in reliability and cost performance. It becomes possible.

The present invention provides a method for forming a wiring using a droplet discharge method, in which a droplet made of a conductive composition is applied to an insulating film provided with an opening for forming a contact with a lower layer portion by a droplet discharge method. The wiring is produced at a position including at least the opening by dropping, and the substrate on which the wiring is produced is subjected to a heat treatment, whereby the surface position of the wiring on the opening and the wiring in the other part The heights at the surface positions are approximately matched.

Further, according to the present invention, in a method for forming a wiring using a droplet discharge method, a liquid made of a conductive composition is formed on an insulating film provided with an opening for forming a contact with a lower layer portion by a droplet discharge method. A wiring is formed at a position including at least the opening by dropping a droplet, and the opening is filled by performing heat treatment on the substrate on which the wiring is manufactured.

Further, according to the present invention, in a method for forming a wiring using a droplet discharge method, a liquid made of a conductive composition is formed on an insulating film provided with an opening for forming a contact with a lower layer portion by a droplet discharge method. A wiring is prepared at a position including at least the opening by dropping a droplet, and the substrate on which the wiring is manufactured is subjected to a heat treatment, so that the surface position of the wiring on the opening and the other portion The wiring is characterized in that the height of the wiring at the surface position is substantially matched and the opening is filled.

In the above structure, the present invention is characterized in that after the heat treatment, a mask is formed over the wiring, and the wiring is etched using the mask.

Further, according to the present invention, in the above structure, a partition is formed on the substrate before the wiring is formed, and the wiring formed by the droplet discharge method is formed inside the partition. It is characterized by.

In the above structure, the present invention is characterized in that the mask is formed by a droplet discharge method.

In the above structure, the present invention is characterized in that the partition wall is manufactured by a droplet discharge method.

The present invention is characterized in that, in the above structure, the step of manufacturing the wiring is performed under reduced pressure.

In the above structure, the present invention is characterized in that the heat treatment is performed using a lamp.

In the above structure, the present invention is characterized in that the heat treatment is performed by laser irradiation.

Moreover, the present invention is characterized in that, in the above structure, the conductive composition is obtained by dispersing a material containing nanometal particles in a solvent.

According to another aspect of the present invention, there is provided a display device manufacturing method using the above-described wiring generation method.

  By utilizing the present invention, it becomes possible to greatly reduce the unevenness of the wiring and the contact failure, and the reliability and stability of the product are greatly improved.

In addition, since the wiring is formed by a droplet discharge method, it is possible to apply a material only to a necessary portion, leading to a reduction in material cost. In addition, since there is no waste liquid due to the etching of the wiring, the burden required for waste treatment is reduced, which can contribute to a reduction in the price of the product.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the present invention can be implemented in many different modes, and it is easy for those skilled in the art to make various changes in form and details without departing from the spirit and scope of the present invention. Understood. Therefore, the present invention is not construed as being limited to the description of this embodiment mode.

(Embodiment 1)
FIG. 1A illustrates an embodiment of the present invention. An example is shown in which conduction is made to a conductive layer 103 over a base insulating film 102 formed over a substrate 101 through an interlayer insulating film 104.

  A droplet 106 in which a conductive composition is dispersed from an inkjet nozzle 105 is dropped onto a contact hole 111 which is an opening for forming a contact with a lower layer portion formed in the interlayer insulating film 104 to form a wiring 107. . At that time, a step is formed by the convex portion 112 on the wiring reflecting the convex portion formed reflecting the shape of the lower conductive layer 103 on the interlayer insulating film 104 and the concave portion 113 formed reflecting the shape of the contact hole. 114 is formed.

  The level difference 114 is reflected on the upper layer as it is unless some leveling process is performed. If a large level difference occurs in the pixel portion of the display device, display unevenness or a defect may be caused. Also, when forming a multi-layer wiring that is effective when it is necessary to integrate with a high density such as a CPU, if there is a step, the step becomes deeper during stacking, and defects due to disconnection or the like are likely to occur.

  Therefore, the wiring 115 formed by the droplet discharge method is reflowed by applying a temperature higher than the softening point of the conductive composition used for the wiring. The conductive composition used for the wiring is in a state of being dispersed in a solvent such as an organic solvent. However, by applying heat, the solvent is evaporated and the dispersed conductive composition is aggregated. When heat is further applied, the temperature approaches the melting point of the conductive composition, so that the fluidity increases again. The temperature at which the fluidity increases and the shape of the wiring begins to change will be called the softening point.

When the heat above the softening point is applied, the conductive composition increases the fluidity, and the wiring material moves to the recess 113 by a driving force such as surface tension and potential energy. As a result, the wiring 115 becomes flat as the step 114 becomes smaller like the wiring 109.

  FIG. 11 is a schematic diagram of stacked wirings when reflow is performed and when reflow is not performed. The thickness of each interlayer insulating film, the location of the contact hole, and the contact diameter are the same. As shown in FIG. 11A, when the multilayer wiring is formed, the unevenness increases as the layers are stacked. On the other hand, by performing the reflow as shown in FIG. 11B, the unevenness is obviously reduced and the surface is flattened.

  When the wiring is flattened in this way, the above-described problem is less likely to occur, and as a result, reliability is improved. In addition, since the wiring is formed by a droplet discharge method, it is possible to apply a material only to a necessary portion, leading to a reduction in material cost. In addition, since there is no waste liquid due to the etching of the wiring, the burden required for waste treatment is reduced, which can contribute to a reduction in the price of the product.

  FIG. 1B shows a state of wiring formation by a droplet discharge method under reduced pressure. Coating by the droplet discharge method under reduced pressure has a great merit in that the dispersion medium is quickly volatilized, and thus the manufacturing process can be advanced quickly. However, the viscosity of the droplet increases and the wiring surface does not become flat like 110. Cases are also conceivable. Even in this case, by performing the reflow process, the level difference can be improved and the surface flatness can be obtained, so that it is possible to obtain great reliability while enjoying the benefits under reduced pressure.

(Embodiment 2)
Another embodiment of the present invention will be described with reference to FIG.

  A contact hole which is an opening for forming a contact with a lower layer portion opened in the interlayer insulating film 207 in a TFT (semiconductor layer 203, gate insulating film 206, gate electrode 205) formed on the base insulating film 202 on the substrate 201. Necessary partial wiring was formed by a droplet discharge method.

  A droplet 209 in which a conductive composition is dispersed is dropped from a nozzle 208 to form a wiring 210. As described in the first embodiment, the wiring 210 reflects the shape of the contact hole, and the recess 212 is formed. In addition, a contact hole having a large aspect ratio may not be completely filled with droplets, which may cause contact failure 211. The contact failure is expected particularly when the wiring is formed by a droplet discharge method under reduced pressure.

  Here, when the conductive composition constituting the wiring 210 is softened and reflowed by applying heat at a temperature higher than the fluidity (softening point), the step of the recess 212 is relaxed, the contact hole is filled, They are repaired as 214 and 213, respectively.

  In this way, it becomes possible to recover defects caused by reflowing the wiring formed by the droplet discharge method, and it is possible to produce a product that is excellent in cost, process, and reliability. It becomes possible.

(Embodiment 3)
In this embodiment, another embodiment will be described with reference to FIG. A droplet in which the conductive composition is dispersed is dropped from a nozzle 301 into a contact hole opened so as to be connected to the TFT by a droplet discharge method, thereby forming a wiring 302.

  As described above, the wiring 302 may have uneven portions reflecting the shape of the contact hole and a contact defect 306.

  Therefore, these disadvantages can be eliminated by heating at a temperature equal to or higher than the softening point of the conductive composition on which the wiring is formed, and reflowing. (Fig. 3 (B))

  However, in a portion where a fine pattern is necessary, such as a driver circuit or an integrated circuit, as shown in FIG. 3B 304, a wiring that has spread due to reflow may cause a short circuit. Further, in a portion where a very fine pattern is required, there is a possibility that a short circuit occurs when the droplet is dropped by the droplet discharge method.

  Therefore, a mask 305 is selectively used in a portion where a fine pattern is required such as a driver circuit or an integrated circuit (FIG. 3C), and etching is performed (FIG. 3D). Even a circuit that requires a high degree of integration can be manufactured with high reliability. In addition, the number of etching steps is increased as compared with a method of forming a wiring only by a droplet discharge method. However, if a mask is manufactured by a droplet discharge method, a mask material can be reduced, which is advantageous in terms of cost.

  In the case where a finer pattern is required, a mask may be formed using a photosensitive material such as a resist by a droplet discharge method, and etching may be performed through mask exposure and development processes. Even in this case, the amount of resist used can be greatly reduced as compared with the case where a resist is applied to the entire surface, and exposure and development are performed.

  Of course, the present invention can be applied even if a resist mask is applied to the entire surface.

(Embodiment 4)
Another embodiment of the present invention will be described with reference to FIG. FIG. 4A is a perspective view when FIG. 4B is cut along AA ′. Note that the ratios such as the membrane pressure in this drawing are changed for the sake of clarity, and may be different from the actual ratios. In addition, there is a part where the description is omitted.

  In this embodiment mode, a TFT is manufactured to form an interlayer insulating film and the like, a contact hole is formed, and then a partition wall 401 is formed along a wiring pattern. The partition wall 401 is preferably formed by dropping a material by a droplet discharge method, but is not limited thereto. The material may be an insulator that can withstand the heat of reflow and serves as a partition wall. Further, the partition wall 401 is a material that can be selectively removed after reflowing, and may not be an insulator as long as it is assumed to be removed. These materials can be appropriately selected by the user. This step of manufacturing the partition may be formed before the contact hole is opened.

  Subsequently, a droplet in which the conductive composition is dispersed is dropped inside the partition wall by a droplet discharge method to form a wiring as represented by 402. As described above, the recesses 403 are formed in the wiring reflecting the shape of the contact holes. Further, depending on the location, the contact hole may not be completely filled as in 404, and a contact failure may occur.

  When the droplets are formed along the wiring pattern by the droplet discharge method, heat treatment is performed at a temperature equal to or higher than the softening point of the conductive composition constituting the wiring and reflowing is performed.

  As a result, the unevenness of the recesses is relaxed, the surface of the wiring is flattened, and the contact holes are filled to repair the contact failure and the disadvantages due to these are eliminated. This dramatically improves the reliability. In addition, the provision of the partition wall prevents the reflowed wiring from spreading to an inconvenient portion and causing a short circuit, and does not impair reliability when forming a precise pattern. Of course, since these steps use the droplet discharge method, the material is not wasted and the method is very excellent in terms of cost. In addition, since only necessary portions are processed, even a large area substrate can be processed quickly.

  In this embodiment mode, the pixel portion of the display device is described as an example. However, the present invention is not limited to this, and the present invention can also be applied to a driver circuit portion and an integrated circuit typified by a CPU.

  Further, this embodiment can also be realized by providing a groove 1401 instead of a partition as shown in FIG.

  As an example of the embodiment of the present invention, a method for producing an active matrix liquid crystal display device will be described in detail with reference to FIGS. In this embodiment, patterning by a photolithography method that has been conventionally used is not used, but a liquid crystal display device with higher reliability can be provided by appropriately combining with the above-described third to fourth embodiments. become. Also, the use of conventional processes as needed is at the discretion of the user.

  Here, a manufacturing process in which an N-channel TFT (for a switch) and a capacitor are formed over the same substrate in an active matrix liquid crystal display device using the present invention will be described.

  As the substrate 601, a substrate that can withstand the processing temperature in this step, such as a flexible substrate typified by a glass substrate or a plastic substrate, is used (FIG. 5A). Specifically, an active matrix substrate is manufactured using a light-transmitting substrate 601. Substrate size is 600mm x 720mm, 680mm x 880mm, 1000mm x 1200mm, 1100mm x 1250mm, 1150mm x 1300mm, 1500mm x 1800mm, 1800mm x 2000mm, 2000mm x 2100mm, 2200mm x 2600mm, or 2600mm x 3100mm It is preferable to use a substrate and reduce manufacturing costs. As a substrate that can be used, a glass substrate such as barium borosilicate glass or aluminoborosilicate glass represented by Corning # 7059 glass or # 1737 glass can be used. Furthermore, a light-transmitting substrate such as a quartz substrate or a plastic substrate can be used as another substrate.

  In this embodiment, a glass substrate 601 is used. Subsequently, a base film 602 made of an insulating film is formed on the substrate 601. The base film 602 may be either a single layer or a laminated structure. In this embodiment, a sputtering method is used as a two-layer structure, a silicon nitride oxide film is 50 nm as the first layer, and a silicon oxynitride film is 50 nm as the second layer. After that, the surface was flattened by a method such as CMP (FIG. 5A).

  Next, a semiconductor layer 603 is formed over the base film 602. As the semiconductor layer 603, first, a semiconductor film is formed to a thickness of 25 to 80 nm by a known method (sputtering method, LPCVD method, plasma CVD method, or the like). Next, the semiconductor film is crystallized by using a known crystallization method (a laser crystallization method, a thermal crystallization method using an RTA or a furnace annealing furnace, a thermal crystallization method using a metal element that promotes crystallization, or the like). Note that as the semiconductor film, a compound semiconductor film having an amorphous structure such as an amorphous semiconductor film, a microcrystalline semiconductor film, a crystalline semiconductor film, or an amorphous silicon germanium film may be used.

  In this example, an amorphous silicon film having a thickness of 50 nm was formed by plasma CVD. Thereafter, a solution containing nickel is held on the amorphous silicon film, and after dehydrogenation (500 ° C., 1 hour) is performed on the amorphous silicon film, thermal crystallization (550 ° C., 4 hours) is performed. A crystalline silicon film was formed. Thereafter, a mask pattern was formed from the resist 605 discharged from the inkjet nozzle 604 by the droplet discharge method according to the present invention. Further, a semiconductor layer 603 was formed by a dry etching method using the mask pattern (FIG. 5B).

Note that as a laser for forming a crystalline semiconductor film by a laser crystallization method, a continuous wave or pulsed gas laser or solid laser may be used. Examples of the former gas laser include an excimer laser and a YAG laser, and examples of the latter solid laser include a laser using a crystal such as YAG or YVO ₄ doped with Cr, Nd, or the like. In order to obtain a crystal with a large grain size when the amorphous semiconductor film is crystallized, it is preferable to use a solid-state laser capable of continuous oscillation and apply the second to fourth harmonics of the fundamental wave. In the case of using the above laser, the laser beam emitted from the laser oscillator may be condensed linearly by an optical system and irradiated onto the semiconductor film.

  However, in this embodiment, since the amorphous silicon film was crystallized using a metal element that promotes crystallization, the metal element remains in the crystalline silicon film. Therefore, an amorphous silicon film having a thickness of 50 to 100 nm is formed on the crystalline silicon film, and heat treatment (RTA method, thermal annealing using a furnace annealing furnace, etc.) is performed, and the amorphous silicon film Metal elements are diffused, and the amorphous silicon film is removed by etching after the heat treatment. As a result, the content of the metal element in the crystalline silicon film can be reduced or removed. In addition, after forming the semiconductor layer 603, a small amount of impurity element (boron) may be doped (channel doping) in order to control the threshold value of the TFT.

  Next, a gate insulating film 606 that covers the semiconductor layer 603 is formed. The gate insulating film 606 is formed of an insulating film containing silicon with a thickness of 40 to 150 nm by plasma CVD or sputtering. In this embodiment, a silicon oxynitride film having a thickness of 115 nm is formed as the gate insulating film 606 by plasma CVD.

  Further, similarly, a first conductive layer (gate wiring, gate electrode, capacitor electrode) 608 is formed under reduced pressure or in vacuum by a droplet discharge method (FIG. 5C).

An ink jet has a large number of droplet ejection nozzles. Alternatively, a plurality of ink heads having different nozzle diameters may be prepared, and ink heads having different nozzle diameters may be used properly according to the application. In addition, the nozzle diameter of a normal ink head is 50 to 100 μm and depends on the nozzle diameter, but considering the throughput, in order to be able to form by one scanning, the same length as one row or one column A plurality of nozzles may be arranged in parallel so that Further, an arbitrary number of nozzles may be arranged and scanned a plurality of times, or the same portion may be scanned a plurality of times and overcoated. Furthermore, although it is preferable to scan the ink head, the substrate may be moved. The distance between the substrate and the ink head is preferably as close as possible so as to be dropped at a desired location, and specifically, about 0.1 to 2 mm is preferable.

  The amount of the composition ejected from the ink head at one time is preferably 10 to 70 pl, the viscosity is 100 cp or less, and the particle size is 0.1 μm or less. This is because drying is prevented and the composition cannot be smoothly discharged from the discharge port if the viscosity is too high. The viscosity, surface tension, drying rate and the like of the composition are adjusted as appropriate according to the solvent used and the application. Moreover, it is preferable that the composition discharged from the ink head is continuously dropped on the substrate to form a linear shape or a stripe shape. However, it may be dropped at predetermined locations such as every dot.

  The composition ejected from the ink head is tantalum (Ta), tungsten (W), titanium (Ti), molybdenum (Mo), aluminum (Al), silver (Ag), copper (Cu), chromium (Cr), niobium. An element selected from (Nd) or an alloy material or compound material containing the element as a main component, an Ag alloy such as an AgPdCu alloy, or a conductive material appropriately selected from an Al alloy was dissolved or dispersed in a solvent. Use things. As the solvent, esters such as butyl acetate and ethyl acetate, alcohols such as isopropyl alcohol and ethyl alcohol, and organic solvents such as methyl ethyl ketone and acetone are used. The concentration of the solvent may be appropriately determined depending on the type of conductive material.

  Further, as a composition ejected from the ink head, ultrafine particles (nanometal particles) in which silver (Ag), gold (Au), and platinum (Pt) are dispersed with a particle diameter of 10 nm or less may be used. As described above, when a composition in which fine particles having a small particle size are dispersed or dissolved in a solvent is used, the problem of nozzle clogging can be solved. In the present invention using a droplet discharge method, the particle size of the constituent material of the composition needs to be smaller than the particle size of the nozzle. Alternatively, a conductive polymer (conductive polymer) such as a polyethylenedioxythiophene / polystyrene sulfonic acid (PEDT / PSS) aqueous solution may be used.

  In addition, when a low-resistance metal such as silver or copper is used as a wiring material, the wiring resistance can be reduced, which is preferable when a large substrate is used. Moreover, since it is difficult to process these metal materials by a normal dry etching method, it is very effective to perform patterning directly by a droplet discharge method. However, in the case of copper, for example, it is preferable to provide a barrier conductive film that prevents diffusion in order not to adversely affect the electrical characteristics of the transistor. With the barrier conductive film, a wiring can be formed without diffusion of copper into a semiconductor included in the transistor. As the barrier conductive film, one or more kinds of laminated films selected from tantalum nitride (TaN), titanium nitride (TiN), and tungsten nitride (WN) can be used. Moreover, since copper is easily oxidized, it is preferable to use an antioxidant together.

  Thereafter, the substrate on which the first conductive layer is formed is subjected to heat treatment in the range of 150 to 300 degrees at normal pressure, reduced pressure, or vacuum, thereby volatilizing the solvent and improving the composition density. To reduce the resistance value. However, as the solvent in the composition discharged from the inkjet nozzle 604, a solvent that volatilizes after dropping on the substrate is suitable. When discharging is performed under vacuum as in this embodiment, the evaporation rate is faster than that under normal atmospheric pressure, but in particular, a highly volatile solvent such as toluene is used. When used, the composition volatilizes instantaneously after being dropped onto the substrate. In such a case, the heat treatment process may be omitted. However, the solvent of the composition is not particularly limited, and even when a solvent that volatilizes after dropping is used, the density of the composition is improved by heating treatment so that a desired resistance value is obtained. May be. In addition, this heat treatment may be performed every time a thin film is formed by a droplet discharge method, may be performed every arbitrary process, or may be performed collectively after all processes are completed. Moreover, when performing reflow, you may abbreviate | omit.

  The heat treatment uses a lamp annealing apparatus that directly heats the substrate at high speed using a lamp such as halogen as a heating source, or a laser irradiation apparatus that irradiates laser light. In both cases, the heat treatment can be performed only on a desired portion by scanning the heat source. As another method, furnace annealing set to a predetermined temperature may be used. However, in the case of using a lamp, it is light having a wavelength that enables heating only without destroying the composition of the thin film to be heat-treated, for example, light having a wavelength longer than 400 nm, that is, a wavelength longer than infrared light Are preferred. From the viewpoint of handling, it is preferable to use far infrared rays (typical wavelength is 4 to 25 μm). In the case of using laser light, the shape of the beam spot on the substrate of the laser light oscillated from the laser oscillation device is preferably linearly formed so as to have the same length as the column or row. If it does so, laser irradiation can be completed by one scan. In this example, normal furnace annealing was used as the heat treatment.

  Subsequently, doping treatment for adding an impurity element imparting N-type or P-type to the semiconductor layer 603 is performed using the gate electrode 608 as a mask. In this embodiment, an impurity region is formed by adding an impurity element imparting n-type conductivity to the semiconductor layer 603 and adding an impurity element imparting p-type conductivity to the semiconductor layer 603. At the same time, a region to which no impurity element was added or a region to which a small amount of impurity element was added (generally referred to as a channel formation region) was formed.

 Thereafter, a first interlayer insulating film 609 is formed to temporarily cover the entire surface. The first interlayer insulating film 609 is formed of an insulating film containing silicon with a film thickness of 40 to 150 nm by using a plasma CVD method or a sputtering method. In this embodiment, a silicon nitride film having a thickness of 100 nm is formed as the first interlayer insulating film 609 by plasma CVD. Further, a second interlayer insulating film 610 covering the entire surface is formed in the same manner. As the second interlayer insulating film 610, a silicon oxide film formed by a CVD method, a silicon oxide film applied by an SOG (Spin On Glass) method or a spin coating method, an organic insulating film such as acrylic, or a non-photosensitive material The organic insulating film is formed with a thickness of 0.7 to 5 μm. In this example, an acrylic film 50 having a thickness of 1.6 μm was formed by a coating method. Note that the second interlayer insulating film 610 is preferably a film having excellent flatness because it has a strong meaning of alleviating unevenness due to the TFT formed over the substrate 601 and flattening. Further, a silicon nitride film to be the third interlayer insulating film 611 is formed with a thickness of 0.1 μm.

  Thereafter, a resist pattern 612 for forming the contact hole 613 is formed by a droplet discharge method in the same manner as described above. Next, a contact hole 613 was formed by anisotropic dry etching using the resist pattern as a mask (FIG. 5D).

  This contact hole may be formed by applying a resist as described above. Alternatively, an interlayer insulating film may be formed by dropping an etching solution 506 from a nozzle 505 of an ink jet apparatus as shown in FIG. A contact hole may be formed by etching 503. After the contact hole is formed, in order to minimize damage to the underlying wiring or the conductive layer 504, the cleaning may be performed by changing the inkjet nozzle and dropping the cleaning liquid 508.

Thereafter, after removing the resist pattern 612, a second conductive layer (source wiring, drain wiring) 615 is formed to extend to the bottom of the contact hole 613 by a droplet discharge method. In this example, the composition to be discharged was a liquid in which fine particles of an alloy of silver and aluminum were dispersed in an organic solvent using a dispersant. The ratio of silver to aluminum is preferably about 40 to 80 atom% of aluminum with respect to silver. In addition, it is possible to use a material such as aluminum alone, an alloy of aluminum and germanium, an alloy of silver and germanium, or an alloy of silver and tin. The material can be appropriately selected by the user. A cross-sectional view at this time is shown in FIG.

In this case, the source / drain region on the gate electrode pattern or Si pattern formed of Al is exposed at the bottom of the contact hole. Since it is necessary to give enough droplets in the contact hole, it is necessary to discharge more droplets to this portion. Alternatively, increasing the coating amount of this portion by overcoating is also important in terms of suppressing contact resistance defects. When forming the second conductive layer, it is necessary to set the viscosity of the composition to be discharged to an optimum value.

Subsequently, heat treatment is performed. The heat treatment may be performed by RTA, GRTA method, laser irradiation, lamp heating, or the like. In this embodiment, since the wiring is made of an alloy of Ag and Al, reflow is performed by instantaneously heating at 500 to 600 ° C. (FIG. 6B) Thereby, the unevenness reflecting the shape of the contact hole and the difference in the wiring shape caused by the drying process are alleviated. Further, even if the contact hole is not sufficiently filled with the composition, repair is possible. Through the above steps, a transistor can be formed over the substrate 601 having an insulating surface.

Subsequently, a pixel electrode 616 made of a transparent conductor is formed over the entire surface so as to be electrically connected to the second conductive layer 615 (FIG. 6B). Examples of the pixel electrode 616 include a compound of indium oxide and tin oxide (ITO), a compound of indium oxide and zinc oxide, zinc oxide, tin oxide, indium oxide, and titanium nitride. In this embodiment, an ITO film having a thickness of 0.1 μm is formed as the pixel electrode 616 by a droplet discharge method (FIG. 6C).

As described above, an active matrix substrate including a source wiring, a TFT and a storage capacitor of the pixel portion, and a terminal portion can be manufactured in the pixel portion. If necessary, the active matrix substrate or the counter substrate is divided into a desired shape.
After that, it is bonded to the counter substrate 620 on which the common electrode 617, the color filter 618, the black matrix 619, and the like are formed. Then, liquid crystal 621 is injected by a predetermined method to complete the liquid crystal display device. (FIG. 6 (D)).

  An active matrix liquid crystal display device (transmission type) is completed when a backlight and a light guide plate are provided on the liquid crystal module obtained by the above steps and covered with a cover. The cover and the liquid crystal module are fixed using an adhesive or an organic resin. Further, since it is a transmissive type, the polarizing plate is attached to both the active matrix substrate and the counter substrate.

Although this embodiment mode shows a transmissive type example, there is no particular limitation, and a reflective or transflective liquid crystal display device can also be manufactured. In the case of obtaining a reflective liquid crystal display device, a metal film with high light reflectivity, typically a material film containing aluminum or silver as a main component, or a laminated film thereof may be used as the pixel electrode.

  Further, when a wiring is manufactured in combination with the third embodiment or the fourth embodiment in a portion where a high degree of integration is necessary, such as a drive circuit portion, reliability is further improved. Of course, you may apply not only to a part but to the whole surface.

As described above, the active matrix type liquid crystal display device has been described with respect to the first embodiment of the present invention. However, the present invention is not limited to this embodiment, and can be applied based on the gist of the present invention. For example, the present invention can be similarly applied to an active matrix organic EL display device. Further, the materials and forming methods taken up in this embodiment can be appropriately selected and used in accordance with the gist of the present invention.

  A second embodiment of the present invention will be described in detail with reference to FIGS. Also in the present invention, the patterning by the photolithography method that has been conventionally used is not used, but a liquid crystal display device with improved reliability can be provided by appropriately combining with the above-described third to fourth embodiments. It becomes like this. Also, the use of conventional processes as needed is at the discretion of the user.

  As the substrate 801, a substrate that can withstand the processing temperature in this step such as a flexible substrate typified by a glass substrate or a plastic substrate is used (FIG. 8A). In this embodiment, a glass substrate 801 is used. Subsequently, a base film 802 made of an insulating film is formed on the substrate 801. The base film 802 may be either a single layer or a laminated structure. In this embodiment, a sputtering method is used as a two-layer structure, a silicon nitride oxide film is 50 nm as the first layer, and a silicon oxynitride film is 50 nm as the second layer. After that, the surface was flattened by a method such as CMP (FIG. 7A).

  Next, a semiconductor layer 803 is formed over the base film 802. As the semiconductor layer 803, first, a semiconductor film is formed to a thickness of 25 to 80 nm by a known method (sputtering method, LPCVD method, plasma CVD method, or the like). Next, the semiconductor film is crystallized by using a known crystallization method (a laser crystallization method, a thermal crystallization method using an RTA or a furnace annealing furnace, a thermal crystallization method using a metal element that promotes crystallization, or the like). Note that as the semiconductor film, a compound semiconductor film having an amorphous structure such as an amorphous semiconductor film, a microcrystalline semiconductor film, a crystalline semiconductor film, or an amorphous silicon germanium film may be used.

  In this example, similarly to the first example, an amorphous silicon film having a thickness of 50 nm was formed by plasma CVD. Thereafter, a solution containing nickel is held on the amorphous silicon film, and after dehydrogenation (500 ° C., 1 hour) is performed on the amorphous silicon film, thermal crystallization (550 ° C., 4 hours) is performed. A crystalline silicon film was formed. After that, the resist discharged from the inkjet head 807 is patterned under reduced pressure or vacuum, the resist pattern is patterned with a mask resist, and semiconductor layers 804 to 806 are formed by dry etching using the resist pattern as a mask (FIG. 7 (B))

Subsequently, a gate insulating film 809 is formed. As the gate insulating film 809, a silicon oxynitride film was formed to a thickness of 115 nm by a plasma CVD method (FIG. 7B).

  Next, in the same manner as in the first embodiment, first conductive layers (gate wirings, gate electrodes) 810 to 813 are formed of tungsten films in a reduced pressure or vacuum. (Fig. 7 (B))

  Thereafter, the substrate on which the first conductive layer is formed is subjected to heat treatment in the range of 150 to 300 degrees under normal pressure, reduced pressure, or vacuum, whereby the solvent is volatilized to obtain good conductive characteristics. However, as the solvent in the composition discharged from the ink head 807, a solvent that volatilizes after dropping onto the substrate is suitable. In particular, when a highly volatile solvent such as toluene is used, the composition is volatilized after being dropped onto the substrate. In such a case, the heat treatment process may be omitted. However, the solvent of the composition is not particularly limited, and even when a solvent that volatilizes after dropping is used, the viscosity of the composition is lowered to a desired viscosity by performing heat treatment. May be. In addition, this heat treatment may be performed every time a thin film is formed by a droplet discharge method, may be performed every arbitrary process, or may be performed collectively after all processes are completed. Further, it may be omitted when performing reflow.

  Further, doping treatment for adding an impurity element imparting N-type or P-type to the semiconductor layers 804 to 806 is performed using the gate electrodes 811 to 813 as masks. In this embodiment, an impurity element imparting N-type conductivity is added to the semiconductor layer 804, and an impurity element imparting P-type conductivity is added to the semiconductor layers 805 and 806, thereby forming impurity regions. At the same time, a region to which no impurity element was added or a region to which a small amount of impurity element was added (generally referred to as a channel formation region) was formed.

  Thereafter, a first interlayer insulating film 814 that temporarily covers the entire surface is formed. The first interlayer insulating film 814 is formed of an insulating film containing silicon with a film thickness of 40 to 150 nm by using a plasma CVD method or a sputtering method. In this embodiment, a silicon nitride film having a thickness of 100 nm is formed as the first interlayer insulating film 814 by plasma CVD. Further, a second interlayer insulating film 815 that covers the entire surface is formed in the same manner. As the second interlayer insulating film 815, an acrylic film having a thickness of 1.6 μm was formed by a coating method. Further, a silicon nitride film to be the third interlayer insulating film 816 is formed with a thickness of 0.1 μm.

  Thereafter, a resist pattern for forming a contact hole is formed by a droplet discharge method in the same manner as described above. Next, contact holes were formed by anisotropic dry etching using the resist pattern as a mask. (Fig. 7 (C))

Thereafter, second conductive layers (source wiring and drain wiring) 817 to 822 are formed so as to extend to the bottom of the contact hole. In this example, the second conductive layer was formed by discharging a liquid in which fine particles of silver and tin were dispersed in an organic solvent using a surfactant to form a wiring pattern. The ratio of silver to aluminum is preferably about 40 to 80 atom% of aluminum with respect to silver. In addition, it is possible to use a material such as aluminum alone, an alloy of aluminum and germanium, an alloy of silver and germanium, or an alloy of silver and tin. The material can be appropriately selected by the user.

  The wiring pattern formed in this way has irregularities reflecting the contact holes, etc., the shape varies depending on the drying condition of the organic solvent, or the contact holes are not completely filled There is a possibility that inconvenience has occurred.

In order to eliminate this inconvenience, heat treatment is subsequently performed. The heat treatment may be performed by RTA, GRTA method, laser irradiation, lamp heating, or the like. In this embodiment, since the wiring is made of an alloy of Ag and Al, reflow is performed by instantaneously heating at 500 to 600 ° C. Thereby, the unevenness reflecting the shape of the contact hole and the difference in wiring shape caused by the drying process are alleviated. Further, even if the contact hole is not sufficiently filled with the composition, repair is possible. Through the above steps, a transistor can be formed over the substrate 801 having an insulating surface. A cross-sectional view at this time is illustrated in FIG.

Subsequently, pixel electrodes 901 and 902 made of a transparent conductor are formed so as to be electrically connected to the second conductive layers 820 and 822 on the entire surface. Examples of the pixel electrodes 901 and 902 include a compound of indium oxide and tin oxide (ITO), a compound of indium oxide and zinc oxide, zinc oxide, tin oxide, indium oxide, and titanium nitride. In this embodiment, an ITO film having a thickness of 0.1 μm is formed as the pixel electrodes 901 and 902 by a droplet discharge method (FIG. 8A).

  Thereafter, a process of forming a light emitting element by organic EL is started. An insulating film 903 is formed so as to cover the end faces of the pixel electrodes 901 and 902. There is no particular limitation on the material for forming the insulating film 903, and the insulating film 903 can be formed using an inorganic or organic material. After that, a region including an organic EL serving as a light emitting layer is formed. The light emitting layers 904 and 905 are sequentially formed in a reduced pressure or in vacuum so as to be in contact with the pixel electrodes 901 and 902 (FIGS. 8B and 8C). )). The material of the light emitting layers 904 and 905 is not particularly limited, but materials for red, green, and blue are used for color display. Next, a second pixel electrode (cathode) 906 is formed by evaporation in a reduced pressure or vacuum (FIG. 8D).

  The second pixel electrode (cathode) 906 is a transparent conductive film stacked on a thin film containing a metal having a low work function (lithium (Li), magnesium (Mg), cesium (Cs)), or a thin film containing Li, Mg, or the like. And a laminated film. The film thickness may be appropriately set so as to act as a cathode, but is formed with a thickness of about 0.01 to 1 μm. In this embodiment, an aluminum / lithium alloy film (Al—Li) is formed to a thickness of 0.1 μm as the second pixel electrode 906. Note that the second pixel electrode 906 is formed over the entire surface.

  A metal film often used as a cathode is a metal film containing an element belonging to Group 1 or Group 2 of the periodic table. However, since these metal films are easily oxidized, it is desirable to protect the surface. In addition, since the necessary film thickness is thin, it is preferable to provide a conductive film having a low resistivity to lower the resistance of the cathode and to protect the cathode. As the conductive film having a low resistivity, a metal film containing aluminum, copper, or silver as a main component is used.

  The formation of the light emitting layers 904 and 905 and the second pixel electrode 906 is realized by changing the composition ejected from the ink head 807 or changing the ink head 807 filled with the composition. In this case, since it can be performed without being exposed to the atmosphere, it leads to high reliability of a light-emitting element that is weak against moisture or the like.

  A stacked body of the first pixel electrodes 901 and 902, the light emitting layers 904 and 905, and the second pixel electrode 906 formed in the above steps corresponds to a light emitting element. The first pixel electrodes 901 and 902 correspond to anodes, and the second pixel electrode 906 corresponds to a cathode. There are singlet excitation and triplet excitation in the excited state of the light-emitting element, and light emission may pass through either excited state.

  In this embodiment, the case where so-called bottom emission, in which light emitted from the light emitting element is extracted from the substrate 801 side (bottom surface) side, is shown. However, so-called top emission, in which light is extracted from the surface of the substrate 801, may be performed. In that case, the first pixel electrodes 901 and 902 may be formed to correspond to the cathode, the second pixel electrode 906 to correspond to the anode, and the second pixel electrode may be formed from a transparent material. The driving TFT is preferably formed of an N-channel TFT. Note that the conductivity type of the driving TFT may be changed as appropriate, but the capacitor is arranged so as to hold the gate-source voltage of the driving TFT. Note that in this embodiment, the case of a display device using a light emitting element is illustrated, but the present invention may be applied to a liquid crystal display device using a liquid crystal element and other display devices.

  Further, when a wiring is manufactured in combination with the third embodiment or the fourth embodiment in a portion where a high degree of integration is necessary, such as a drive circuit portion, reliability is further improved. Of course, you may apply not only to a part but to the whole surface.

  The present invention having the above structure can provide a method for manufacturing a wiring, a conductive layer, and a display device that can cope with an increase in the size of a substrate and has high reliability while improving throughput and material utilization efficiency. it can.

  Another embodiment of the present invention will be described with reference to FIG. FIG. 17 shows an example in which a multilayer wiring that is effective when high integration such as a CPU is required.

  In the present embodiment, only the uppermost seventh layer wiring 1700 is formed by using the droplet discharge method, and the first to sixth wirings are formed by using a conventional photosensitive resist as a mask. It is formed through a lithography process. In order to form wiring that requires precision in this way, a film by sputtering is formed as before, a wiring pattern is formed by etching through a photolithography process, and a droplet discharge method is used only for a relatively thick wiring pattern in the upper layer. It may be formed. In this embodiment mode, an example in which only the uppermost layer is formed using a droplet discharge method is shown as an example.

FIG. 17 shows a schematic diagram of a partial cross section of an integrated circuit, and is not limited to this structure unless departing from the gist of the present invention. Of course, the number of stacked layers is also limited to this. It is clearly stated that it is not.

  A semiconductor layer 1703 is formed over a substrate 1701 over which a base insulating film 1702 is formed, and a gate electrode 1705 is formed as a first wiring through the gate insulating film 1704. Subsequently, an interlayer insulating film 1706 is formed using a material such as silicon oxide, acrylic, or polyimide, and contact holes are formed by etching using a mask formed by exposing and developing a photosensitive resist.

  Subsequently, a second layer wiring is formed so as to be connected to the impurity region of the semiconductor layer. As the wiring material, aluminum, titanium, an alloy of aluminum and titanium, and a laminated film thereof are often used. In this embodiment, an alloy of aluminum and germanium is used as the wiring. By using an alloy of aluminum and germanium, it is possible to perform reflow and planarize.

  When the second layer wiring is formed, reflow is performed by instantaneously applying heat above the softening point of the wiring. The specific temperature varies depending on the ratio of the aluminum and titanium alloy used for the wiring, but is about 250 to 400 ° C. By reflowing, the flatness becomes good and the contact failure is recovered, so that a great improvement in reliability can be expected.

  Next, an interlayer insulating film is formed again, and a third-layer wiring is formed in the same manner as the second wiring. Here again, it is preferable to use an alloy of aluminum and germanium and perform reflow.

  Thereafter, the layers were sequentially stacked in the same manner, and the droplet discharge method was applied to the uppermost wiring 1700. As the composition to be used for discharge, a liquid in which fine particles of an alloy of silver and aluminum were dispersed in an organic solvent using a dispersant was used. The formed wiring is reflowed by instantaneously heating the heat of 500 to 600 ° C. by using a laser or a lamp. At this time, since heat is instantaneously reflowed in a thermal non-equilibrium state, almost no heat is transferred to the lower wiring. The wiring 1700 is reflowed to increase flatness like the wiring 1707.

  In this manner, by sequentially stacking and reflowing, even if an integrated circuit having a multi-layer structure is formed, it is possible to manufacture a circuit having excellent flatness and reliability.

  Further, if a product with good flatness is produced up to the uppermost layer wiring as in the present invention, application to the transfer technology can be expected. There is a transfer technique as one of methods for forming elements on a plastic substrate or the like that has been studied recently.

  As the technique, there is a technique in which an element is once formed on a glass substrate or the like as usual, and the formed element is attached to a support and peeled off from the original glass substrate. At this time, if there are large irregularities on the surface of the element, the adhesion to the support is deteriorated, and there is a possibility that inconveniences such as the peeling not being performed normally occur. By using the present invention, the flatness of the element surface is increased, and the effect of suppressing the occurrence of such inconvenience can be expected.

  In this embodiment, an example in which the present invention is applied to a channel-etched bottom gate TFT will be described with reference to FIG.

  A gate electrode 1610 is formed on the substrate 1600 using Ta, Cr, Mo, Al, or the like. After that, a gate insulating film 1601 is formed using a silicon nitride film, a silicon oxide film, a tantalum oxide film, or the like, and a semiconductor film 1602 having an amorphous structure is formed thereon so as to partially overlap the gate electrode 1610. A typical material of the semiconductor film 1602 having an amorphous structure is amorphous silicon, which is formed to a thickness of 100 to 250 nm by a plasma CVD method. Subsequently, an n-type or p-type impurity is added so as to overlap with the semiconductor film 1602 having an amorphous structure. After processing these two layers into an island shape, a film is formed from Cr, Ti, Ta or the like. This film is patterned to form source / drain electrodes 1605 and 1606. Using the source / drain electrodes 1605 and 1606 as a mask, the semiconductor layer to which an n-type or p-type impurity is added is etched to be divided into two regions 1603 and 1604. Since this etching process cannot be selectively performed on the semiconductor layer 1602 having an amorphous structure, a part of the etching process is also removed by etching. Thereafter, an insulating film is formed and contact holes are formed so as to be connected to the source / drain electrodes 1605 and 1606. (Fig. 9 (A))

  A wiring 1608 is formed by a droplet discharge method so as to be connected to the source / drain electrode 1606 through the contact hole. As a composition of droplets to be discharged, a liquid in which fine particles of an alloy of silver and aluminum are dispersed in an organic solvent using a dispersant may be used. (Fig. 9 (B))

The formed wiring is reflowed by instantaneously heating the heat of 500 to 600 ° C. by using a laser or a lamp. (FIG. 9C) At this time, since heat is instantaneously reflowed in a thermal non-equilibrium state, heat is hardly transmitted to the lower layer wiring. The wiring 1608 can reduce inconvenience caused by reflowing even if wiring irregularities or contact failures occur. As a result, it is possible to provide a highly reliable product at low cost while eliminating waste of materials.

  A method as shown in FIG. 10 is also conceivable for flattening irregularities and bulges on the surface of the conductive layer and insulating film formed by the droplet discharge method. When a base insulating film 1001, a semiconductor layer 1002, and a gate insulating film 1003 are formed over a substrate 1000, a droplet 1005 containing a conductive composition is dropped from a nozzle 1004 using a droplet discharge method to form a conductive layer 1006. To do.

  The formed conductive layer is heated and then pressed with a substrate 1007 or a roller 1008 coated with Teflon (registered trademark) or the like (FIGS. 10A and 10B) to flatten fine irregularities on the surface. Is done. At this time, buffing, electrolytic polishing, composite electrolytic polishing, or the like may be used instead of the press treatment.

  FIG. 13 shows an example of an apparatus for forming wiring and the like by a droplet discharge method. The entire apparatus includes means 1106 for fixing the substrate 1101 by a mechanical chuck or the like and moving it accurately in the Y direction, means 1107 for supplying the composition to the ink head 1102, vacuum evacuation means 1103 for evacuating the processing chamber, and the like. Consists of

First, the vacuum evacuation means 1103 can evacuate the chamber and maintain a high vacuum. Further, in the chamber, the ink head 1102 is a means for ejecting a minute liquid containing a material for forming a desired pattern on the substrate 1101, and has a number of nozzles so that the position can be finely adjusted. It has become. On the other hand, the substrate 1101 can move in the Y-axis direction, and the discharge period from the ink head 1102, the moving distance of the substrate 1101, and the position of the ink head 1102 are minute so that a continuous wiring pattern is formed on the substrate. By simultaneously adjusting the adjustment, various patterns can be formed on the substrate.

In addition, as an accompanying element, a transport unit for carrying in and out of the substrate holding unit 1105 for holding a substrate to be processed, a clean unit for sending clean air and reducing dust in the work area, and the like may be provided.

  In the vacuum exhaust means 1103, a turbo molecular pump, a mechanical booster pump, an oil rotary pump, or a cryopump can be used as an exhaust pump, but it is desirable to use them in combination as appropriate.

  In the present invention, pattern formation of a wiring, a conductive film, or a resist material is performed in an inkjet processing chamber 1108. The amount of the composition ejected from the ink head 1102 at a time is preferably 10 to 70 pl, the viscosity is 100 cp or less, and the particle size is 0.1 μm or less. This is because drying is prevented and the composition cannot be smoothly discharged from the discharge port if the viscosity is too high. The viscosity, surface tension, drying rate and the like of the composition are adjusted as appropriate according to the solvent used and the application. Moreover, it is preferable that the composition discharged from the ink head is continuously dropped on the substrate to form a linear shape or a stripe shape. However, it may be dropped at predetermined locations such as every dot. The inkjet processing chamber 1108 is provided with a substrate holding means 1105, an ink head 1102, and the like.

  Although the apparatus in this embodiment mode is not illustrated in FIG. 13, a sensor for alignment with the substrate 1101 or a pattern on the substrate, a gas introduction unit to the inkjet processing chamber 1108, and inkjet Exhaust means inside the processing chamber 1108, means for heat-treating the substrate, means for irradiating the substrate with light, and means for measuring various physical property values such as temperature and pressure may be installed as necessary. These means can also be collectively controlled by a control means 1109 installed outside the inkjet processing chamber 1108. Furthermore, if the control means 1109 is connected to a production management system or the like with a LAN cable, wireless LAN, optical fiber, or the like, the process can be uniformly managed from the outside, which leads to an improvement in productivity.

  As described above, the present invention can be used in various combinations by applying the means of the above embodiment in various ways. The material used for ejection may be any material that can be dissolved in a solvent or liquefied by heating and can be ejected as droplets. For example, a conductive material used as a wiring, a resist material, an orientation The resin material used for the film, the light emitting material used for the light emitting element, the etching solution used for wet etching, and the like can be used depending on the application.

  On the other hand, the substrate used in the present invention can be applied to an object to be processed such as a glass substrate of a desired size, a resin substrate typified by a plastic substrate, or a semiconductor wafer typified by silicon. Furthermore, it may be either a substrate having a flat surface or a substrate on which an uneven pattern is formed. In addition, the hydrophilic substrate and hydrophobicity of the substrate surface may be appropriately selected within the applicable range as described above, or may not be so.

  Note that the input circuit wiring can be immediately produced by connecting the control means 1109 to a personal computer or the like. The system at this time will be briefly described with reference to FIG.

  As basic components, a droplet discharge apparatus including a CPU 3100, a volatile memory 3101, a nonvolatile memory 3102, an input unit 3103 such as a keyboard and operation buttons, and a droplet discharge unit 3104 can be cited. The operation will be briefly described. When circuit wiring data is input by the input unit 3103, the data is stored in the volatile memory 3101 or the nonvolatile memory 3102 via the CPU 3100. Based on this data, the droplet discharge means 3104 selectively discharges the droplet composition, whereby a wiring can be formed.

  With the above configuration, a mask for the purpose of exposure becomes unnecessary, and steps such as exposure and development can be greatly reduced. As a result, throughput is increased and productivity can be greatly improved. Moreover, you may use this structure for the purpose of repairing the disconnection location of a wiring, the defective location of the electrical connection between a wiring and an electrode, etc. In this case, for example, it is preferable to input a repair location to a personal computer or the like and discharge the droplet composition from the nozzle to the location. In addition, wiring can be easily formed even on a large-sized board with a meter angle, and since only a necessary amount of material needs to be applied to a desired location, the amount of wasted material is reduced. Improve usage efficiency and reduce production costs.

  As an electronic device to which the present invention is applied, a video camera, a digital camera, a goggle type display (head mounted display), a navigation system, a sound reproduction device (car audio, audio component, etc.), a notebook type personal computer, a game machine, portable information Plays back a recording medium such as a terminal (mobile computer, mobile phone, portable game machine or electronic book), and a recording medium (specifically, Digital Versatile Disc (DVD)) and displays the image. And the like). Specific examples of these electronic devices are shown in FIGS.

FIG. 15A illustrates a display device, which includes a housing 2001, a support base 2002, a display portion 2003, a speaker portion 2004, and the like. The present invention is applied to manufacture of the display portion 2003. In particular, the present invention is suitable for a display device having a large screen of 20 to 80 inches.

FIG. 15B illustrates a digital still camera, which includes a main body 2101, a display portion 2102, an image receiving portion 2103, operation keys 2104, an external connection port 2105, a shutter 2106, and the like. The present invention can be applied to the display portion 2102.

  FIG. 15C illustrates a laptop personal computer, which includes a main body 2201, a housing 2202, a display portion 2203, a keyboard 2204, an external connection port 2205, a pointing mouse 2206, and the like. The present invention can be applied to the display portion 2203.

  FIG. 15D illustrates a mobile computer, which includes a main body 2301, a display portion 2302, a switch 2303, operation keys 2304, an infrared port 2305, and the like. The present invention can be applied to the display portion 2302.

  FIG. 15E illustrates a portable game machine including a housing 2801, a display portion 2802, a speaker portion 2803, operation keys 2804, a recording medium insertion portion 2805, and the like. The present invention can be applied to the display portion 2802.

  FIG. 16E illustrates a portable image reproducing device (specifically, a DVD reproducing device) provided with a recording medium, which includes a main body 2401, a housing 2402, a display portion A2403, a display portion B2404, and a recording medium (DVD or the like). A reading unit 2405, operation keys 2406, a speaker unit 2407, and the like are included. Although the display portion A 2403 mainly displays image information and the display portion B 2404 mainly displays character information, the present invention can be applied to the display portions A, B 2403, and 2404. Note that an image reproducing device provided with a recording medium includes a home game machine and the like.

  FIG. 16F illustrates a goggle type display (head mounted display), which includes a main body 2501, a display portion 2502, and an arm portion 2503. The present invention can be applied to the display portion 2502.

  FIG. 16G illustrates a video camera, which includes a main body 2601, a display portion 2602, a housing 2603, an external connection port 2604, a remote control receiving portion 2605, an image receiving portion 2606, a battery 2607, an audio input portion 2608, operation keys 2609, and the like. . The present invention can be applied to the display portion 2602.

  FIG. 16H illustrates a mobile phone, which includes a main body 2701, a housing 2702, a display portion 2703, an audio input portion 2704, an audio output portion 2705, operation keys 2706, an external connection port 2707, an antenna 2708, and the like. The present invention can be applied to the display portion 2703 and the CPU 2709. The CPU 2709 is formed on the panel at the same time and has a multilayer wiring. The present invention is particularly preferably applied to the CPU 2709.

  As described above, the applicable range of the present invention is so wide that it can be used for electronic devices in various fields. In addition, it also contributes to the realization of lower prices due to fewer defects. In addition, since the reliability of the product is improved, the reliability as a manufacturer can be increased.

FIG. 3 illustrates Embodiment 1; FIG. 6 illustrates Embodiment 2. FIG. 7 illustrates Embodiment 3. FIG. 6 illustrates Embodiment 4; FIG. 3 is a diagram illustrating Example 1; FIG. 3 is a diagram illustrating Example 1; FIG. FIG. FIG. 6 shows a fourth embodiment. FIG. 6 is a diagram illustrating Example 5. The figure showing the example of multilayer wiring formation by the droplet discharge method. The figure showing the example of contact hole formation by the droplet discharge method. The figure showing the apparatus used for this invention. The block diagram regarding computer control. FIG. 14 illustrates an example of an electronic device. FIG. 14 illustrates an example of an electronic device. The figure showing the example of multilayer wiring formation. FIG. 6 illustrates Embodiment 4;

Claims (7)

The insulating film to form an opening for forming a contact between the lower portion and the wiring, and a groove along the pattern of the wiring,
Droplets made of a conductive composition by a droplet discharge method, the forming the wiring by dropping in the trench and the opening,
A method for manufacturing a wiring, wherein the wiring is reflowed by heat treatment.   The method for manufacturing a wiring according to claim 1, wherein the heat treatment is performed at a temperature equal to or higher than a softening point of the conductive composition.   3. The method for manufacturing a wiring according to claim 1, wherein the dropping of the droplet is performed under reduced pressure.   4. The method for manufacturing a wiring according to claim 1, wherein the heat treatment is performed using a lamp. 5.   4. The method for manufacturing a wiring according to claim 1, wherein the heat treatment is performed by laser irradiation. 5.   6. The method for manufacturing a wiring according to claim 1, wherein the conductive composition is obtained by dispersing a material containing nanometal particles in a solvent.   A method for manufacturing a display device, wherein the method for manufacturing a wiring according to any one of claims 1 to 6 is used.

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