JP4584539B2 - ポリチオフェン類 - Google Patents

ポリチオフェン類 Download PDF

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Publication number
JP4584539B2
JP4584539B2 JP2003006211A JP2003006211A JP4584539B2 JP 4584539 B2 JP4584539 B2 JP 4584539B2 JP 2003006211 A JP2003006211 A JP 2003006211A JP 2003006211 A JP2003006211 A JP 2003006211A JP 4584539 B2 JP4584539 B2 JP 4584539B2
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JP
Japan
Prior art keywords
polythiophenes
polythiophene
layer
semiconductor
tft
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2003006211A
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English (en)
Japanese (ja)
Other versions
JP2003221434A5 (enExample
JP2003221434A (ja
Inventor
エス オン ベン
リュー ピン
ジアン ルー
キ ユー
ウー イリアン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xerox Corp
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Xerox Corp
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Publication date
Application filed by Xerox Corp filed Critical Xerox Corp
Publication of JP2003221434A publication Critical patent/JP2003221434A/ja
Publication of JP2003221434A5 publication Critical patent/JP2003221434A5/ja
Application granted granted Critical
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    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/12Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
    • C08G61/122Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides
    • C08G61/123Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds
    • C08G61/126Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds with a five-membered ring containing one sulfur atom in the ring
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10Organic polymers or oligomers
    • H10K85/111Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/464Lateral top-gate IGFETs comprising only a single gate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/466Lateral bottom-gate IGFETs comprising only a single gate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
JP2003006211A 2002-01-11 2003-01-14 ポリチオフェン類 Expired - Fee Related JP4584539B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/042,357 2002-01-11
US10/042,357 US7141644B2 (en) 2002-01-11 2002-01-11 Polthiophenes and devices thereof

Publications (3)

Publication Number Publication Date
JP2003221434A JP2003221434A (ja) 2003-08-05
JP2003221434A5 JP2003221434A5 (enExample) 2006-02-23
JP4584539B2 true JP4584539B2 (ja) 2010-11-24

Family

ID=21921449

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003006211A Expired - Fee Related JP4584539B2 (ja) 2002-01-11 2003-01-14 ポリチオフェン類

Country Status (4)

Country Link
US (2) US7141644B2 (enExample)
EP (1) EP1329476B1 (enExample)
JP (1) JP4584539B2 (enExample)
DE (1) DE60307687T2 (enExample)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6872801B2 (en) * 2002-01-11 2005-03-29 Xerox Corporation Polythiophenes and devices thereof
US6777529B2 (en) * 2002-01-11 2004-08-17 Xerox Corporation Polythiophenes and devices thereof
US7462726B2 (en) 2004-01-27 2008-12-09 Canon Kabushiki Kaisha Conjugated thiophene compound comprising perfluorinated and alkylated sidechains, conductive organic thin film containing the compound, and field-effect type organic transistor employing the thin film
DE102004009600B4 (de) * 2004-02-27 2008-04-03 Qimonda Ag Selbstorganisierende organische Dielektrikumsschichten auf der Basis von Phosphonsäure-Derivaten
GB2427866B (en) * 2004-03-17 2008-01-30 Dow Global Technologies Inc Pentathienyl-fluorene copolymer
US7102017B2 (en) * 2004-06-10 2006-09-05 Xerox Corporation Processes to prepare small molecular thiophene compounds
US7294850B2 (en) * 2004-06-10 2007-11-13 Xerox Corporation Device with small molecular thiophene compound having divalent linkage
CN100583485C (zh) * 2004-09-24 2010-01-20 普莱克斯托尼克斯公司 含杂原子立体规则性聚(3-取代噻吩)的光电池
EP1805826B1 (en) 2004-09-24 2010-03-24 Plextronics, Inc. Heteroatomic regioregular poly(3-substitutedthiophenes) in electroluminescent devices
KR20060081441A (ko) * 2005-01-07 2006-07-13 삼성전자주식회사 신규한 티오펜-티아졸 유도체 및 이를 이용한 유기박막트랜지스터
US20060237695A1 (en) * 2005-03-16 2006-10-26 Plextronics, Inc. Copolymers of soluble poly(thiophenes) with improved electronic performance
US7321021B2 (en) * 2005-03-22 2008-01-22 Xerox Corporation Removing impurities from polythiophene
US8089062B2 (en) * 2005-03-23 2012-01-03 Xerox Corporation Wax encapsulated electronic devices
JP4481869B2 (ja) * 2005-04-26 2010-06-16 信越半導体株式会社 太陽電池の製造方法及び太陽電池並びに半導体装置の製造方法
TW200712060A (en) * 2005-05-19 2007-04-01 Nissan Chemical Ind Ltd Thiophene compound having phosphoric ester and process for producing the same
JP2006344719A (ja) 2005-06-08 2006-12-21 Dainippon Printing Co Ltd 有機半導体材料、有機半導体構造物及び有機半導体装置
JP2007012759A (ja) * 2005-06-29 2007-01-18 Konica Minolta Holdings Inc 有機半導体材料、有機半導体膜、有機半導体素子及び有機薄膜トランジスタ
KR20070017692A (ko) * 2005-08-08 2007-02-13 삼성전자주식회사 저분자 공액 질소 화합물 및 이를 이용한 소자
KR101440409B1 (ko) * 2005-08-18 2014-09-15 닛산 가가쿠 고교 가부시키 가이샤 술포닐기를 갖는 티오펜 화합물 및 그 제조법
JP4931118B2 (ja) * 2005-09-08 2012-05-16 住友化学株式会社 フッ素化シクロペンタン環と芳香環との縮合したユニットを含む重合体、並びにこれを用いた有機薄膜及び有機薄膜素子
WO2007100600A2 (en) * 2006-02-24 2007-09-07 Plextronics, Inc. High performance polymer photovoltaics
US7718999B2 (en) 2006-12-14 2010-05-18 Xerox Corporation Polythiophene electronic devices
JP5152493B2 (ja) * 2007-03-26 2013-02-27 国立大学法人大阪大学 有機電界効果トランジスター及びその製造方法
JP2009197218A (ja) * 2008-01-22 2009-09-03 Ricoh Co Ltd 重合体、それを含む有機膜及びトランジスタ
US7837903B2 (en) * 2008-12-10 2010-11-23 Xerox Corporation Polythiophenes and electronic devices comprising the same
KR101644048B1 (ko) * 2009-08-25 2016-07-29 삼성전자 주식회사 유기 반도체 고분자 및 이를 포함하는 트랜지스터
WO2011025454A1 (en) 2009-08-28 2011-03-03 Agency For Science, Technology And Research Ambipolar polymeric semiconductor materials and organic electronic devices
CN102574991B (zh) 2009-08-28 2014-04-23 新加坡科技研究局 聚合物半导体、装置及相关方法
JP5760875B2 (ja) * 2011-09-07 2015-08-12 住友化学株式会社 高分子化合物及びそれを用いた有機トランジスタ
CN103772665B (zh) * 2014-01-23 2016-03-23 中国科学院化学研究所 一种聚噻吩衍生物及其制备方法与应用

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0260541A3 (en) 1986-09-08 1990-02-28 Honeywell Inc. Electroactive polymers and method of making them
FR2648140B1 (fr) 1989-06-08 1991-05-03 Centre Nat Rech Scient Procede de preparation d'oligomeres d'heterocycles aromatiques par couplage oxydant d'oligomeres inferieurs
JPH04293919A (ja) * 1991-03-25 1992-10-19 Nippon Soda Co Ltd 重合体の製造方法
CA2152922A1 (en) * 1992-12-29 1994-07-07 Georges Hadziioannou Multi-bloc copolymer based tunable light emitting diode, polymers suitable therefor and oligomers
FR2703359B1 (fr) * 1993-03-31 1995-06-23 Cis Bio Int Copolymère nucléotide(s)/polymère conducteur électronique ; son procédé de préparation et son utilisation .
US5619357A (en) * 1995-06-06 1997-04-08 International Business Machines Corporation Flat panel display containing black matrix polymer
US5969376A (en) * 1996-08-23 1999-10-19 Lucent Technologies Inc. Organic thin film transistor having a phthalocyanine semiconductor layer
US6107117A (en) * 1996-12-20 2000-08-22 Lucent Technologies Inc. Method of making an organic thin film transistor
US5777070A (en) * 1997-10-23 1998-07-07 The Dow Chemical Company Process for preparing conjugated polymers
WO2002009201A1 (en) * 2000-07-24 2002-01-31 Northwestern University n-TYPE THIOPHENE SEMICONDUCTORS
TW541855B (en) * 2001-04-27 2003-07-11 Sumitomo Chemical Co Polymeric fluorescent substance and polymer light-emitting device using the same
US6872801B2 (en) * 2002-01-11 2005-03-29 Xerox Corporation Polythiophenes and devices thereof
US6777529B2 (en) * 2002-01-11 2004-08-17 Xerox Corporation Polythiophenes and devices thereof

Also Published As

Publication number Publication date
US7517945B2 (en) 2009-04-14
DE60307687T2 (de) 2006-12-07
DE60307687D1 (de) 2006-10-05
US20070088149A1 (en) 2007-04-19
US7141644B2 (en) 2006-11-28
EP1329476A1 (en) 2003-07-23
EP1329476B1 (en) 2006-08-23
US20030171531A1 (en) 2003-09-11
JP2003221434A (ja) 2003-08-05

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