JP4561935B2 - 有機el表示装置の製造方法 - Google Patents
有機el表示装置の製造方法 Download PDFInfo
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- JP4561935B2 JP4561935B2 JP2010020317A JP2010020317A JP4561935B2 JP 4561935 B2 JP4561935 B2 JP 4561935B2 JP 2010020317 A JP2010020317 A JP 2010020317A JP 2010020317 A JP2010020317 A JP 2010020317A JP 4561935 B2 JP4561935 B2 JP 4561935B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000010410 layer Substances 0.000 claims description 87
- 239000000758 substrate Substances 0.000 claims description 35
- 239000010408 film Substances 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 28
- 239000012044 organic layer Substances 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 17
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 17
- 239000010409 thin film Substances 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 description 14
- 239000000463 material Substances 0.000 description 12
- 239000011159 matrix material Substances 0.000 description 12
- 238000000605 extraction Methods 0.000 description 11
- 230000002093 peripheral effect Effects 0.000 description 10
- 239000011229 interlayer Substances 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 7
- 229910000838 Al alloy Inorganic materials 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- -1 di (p-tolyl) aminophenyl Chemical group 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 230000005525 hole transport Effects 0.000 description 5
- 238000001459 lithography Methods 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 4
- 238000003980 solgel method Methods 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005401 electroluminescence Methods 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- YLYPIBBGWLKELC-UHFFFAOYSA-N 4-(dicyanomethylene)-2-methyl-6-(4-(dimethylamino)styryl)-4H-pyran Chemical compound C1=CC(N(C)C)=CC=C1C=CC1=CC(=C(C#N)C#N)C=C(C)O1 YLYPIBBGWLKELC-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000001989 lithium alloy Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- DAYVBDBBZKWNBY-UHFFFAOYSA-N 1,2-bis[(2,5-ditert-butylphenyl)carbamoyl]perylene-3,4-dicarboxylic acid Chemical compound CC(C)(C)C1=CC=C(C(C)(C)C)C(NC(=O)C=2C(=C3C=4C=CC=C5C=CC=C(C=45)C=4C=CC(=C(C3=4)C=2C(O)=O)C(O)=O)C(=O)NC=2C(=CC=C(C=2)C(C)(C)C)C(C)(C)C)=C1 DAYVBDBBZKWNBY-UHFFFAOYSA-N 0.000 description 1
- MXVLMYZRJAHEIS-UHFFFAOYSA-N 1-(2-phenylphenyl)naphthalene Chemical group C1=CC=CC=C1C1=CC=CC=C1C1=CC=CC2=CC=CC=C12 MXVLMYZRJAHEIS-UHFFFAOYSA-N 0.000 description 1
- VEUMBMHMMCOFAG-UHFFFAOYSA-N 2,3-dihydrooxadiazole Chemical compound N1NC=CO1 VEUMBMHMMCOFAG-UHFFFAOYSA-N 0.000 description 1
- RLFZYIUUQBHRNV-UHFFFAOYSA-N 2,5-dihydrooxadiazole Chemical class C1ONN=C1 RLFZYIUUQBHRNV-UHFFFAOYSA-N 0.000 description 1
- FQJQNLKWTRGIEB-UHFFFAOYSA-N 2-(4-tert-butylphenyl)-5-[3-[5-(4-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]phenyl]-1,3,4-oxadiazole Chemical compound C1=CC(C(C)(C)C)=CC=C1C1=NN=C(C=2C=C(C=CC=2)C=2OC(=NN=2)C=2C=CC(=CC=2)C(C)(C)C)O1 FQJQNLKWTRGIEB-UHFFFAOYSA-N 0.000 description 1
- OWEOYUSGIQAOBA-UHFFFAOYSA-N 3-(2-methylphenyl)-n-[4-[4-[3-(2-methylphenyl)anilino]phenyl]phenyl]aniline Chemical group CC1=CC=CC=C1C1=CC=CC(NC=2C=CC(=CC=2)C=2C=CC(NC=3C=C(C=CC=3)C=3C(=CC=CC=3)C)=CC=2)=C1 OWEOYUSGIQAOBA-UHFFFAOYSA-N 0.000 description 1
- CMSGUKVDXXTJDQ-UHFFFAOYSA-N 4-(2-naphthalen-1-ylethylamino)-4-oxobutanoic acid Chemical compound C1=CC=C2C(CCNC(=O)CCC(=O)O)=CC=CC2=C1 CMSGUKVDXXTJDQ-UHFFFAOYSA-N 0.000 description 1
- WXAIEIRYBSKHDP-UHFFFAOYSA-N 4-phenyl-n-(4-phenylphenyl)-n-[4-[4-(4-phenyl-n-(4-phenylphenyl)anilino)phenyl]phenyl]aniline Chemical compound C1=CC=CC=C1C1=CC=C(N(C=2C=CC(=CC=2)C=2C=CC=CC=2)C=2C=CC(=CC=2)C=2C=CC(=CC=2)N(C=2C=CC(=CC=2)C=2C=CC=CC=2)C=2C=CC(=CC=2)C=2C=CC=CC=2)C=C1 WXAIEIRYBSKHDP-UHFFFAOYSA-N 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910001148 Al-Li alloy Inorganic materials 0.000 description 1
- 241000284156 Clerodendrum quadriloculare Species 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000846 In alloy Inorganic materials 0.000 description 1
- 229910000733 Li alloy Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- JFBZPFYRPYOZCQ-UHFFFAOYSA-N [Li].[Al] Chemical compound [Li].[Al] JFBZPFYRPYOZCQ-UHFFFAOYSA-N 0.000 description 1
- JHYLKGDXMUDNEO-UHFFFAOYSA-N [Mg].[In] Chemical compound [Mg].[In] JHYLKGDXMUDNEO-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- SNAAJJQQZSMGQD-UHFFFAOYSA-N aluminum magnesium Chemical compound [Mg].[Al] SNAAJJQQZSMGQD-UHFFFAOYSA-N 0.000 description 1
- 239000010405 anode material Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- XZCJVWCMJYNSQO-UHFFFAOYSA-N butyl pbd Chemical compound C1=CC(C(C)(C)C)=CC=C1C1=NN=C(C=2C=CC(=CC=2)C=2C=CC=CC=2)O1 XZCJVWCMJYNSQO-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 150000004775 coumarins Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- BWHLPLXXIDYSNW-UHFFFAOYSA-N ketorolac tromethamine Chemical compound OCC(N)(CO)CO.OC(=O)C1CCN2C1=CC=C2C(=O)C1=CC=CC=C1 BWHLPLXXIDYSNW-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 125000000040 m-tolyl group Chemical group [H]C1=C([H])C(*)=C([H])C(=C1[H])C([H])([H])[H] 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- LISFMEBWQUVKPJ-UHFFFAOYSA-N quinolin-2-ol Chemical compound C1=CC=C2NC(=O)C=CC2=C1 LISFMEBWQUVKPJ-UHFFFAOYSA-N 0.000 description 1
- 150000004322 quinolinols Chemical class 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229940042055 systemic antimycotics triazole derivative Drugs 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/878—Arrangements for extracting light from the devices comprising reflective means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
Description
光透明性基板上に配線を形成する工程と、
前記光透明性基板上に薄膜トランジスタを形成する工程と、
前記光透明性基板上に有機EL素子を形成する工程と、
を含み、
前記有機EL素子を形成する工程は、
前記光透明性基板上の、前記配線又は前記薄膜トランジスタが形成されている領域以外の領域に窒化シリコンからなる高屈折率層を形成する工程と、
前記高屈折率層の側面に光反射部を形成する工程と、
前記高屈折率層の上面に回折格子を構成する溝を形成する工程と、
塗布乾燥焼成法により前記高屈折率層上にシリコン酸化膜を形成する工程と、
前記シリコン酸化膜の上方に透明性電極を形成する工程と、
前記透明性電極の上方に発光する有機層を形成する工程と、
前記有機層の上方に電極を形成する工程と、
を有し、
前記高屈折率層は、その上面が前記配線の上面及び前記薄膜トランジスタの上面よりも位置が上になるよう形成される、
ことを特徴とする。
2:表示領域
3:ロウドライバ
4:カラムドライバ
5:表示画素
6:有機EL素子
7:画素回路
8:配線
9:ガラス基板
10:FET
11:層間絶縁膜
12:高屈折率層
13:シリコン酸化膜層
13a:回折格子
14:光反射部
15:透明電極層
16:有機層
17:レジスト層
18:陰極
Claims (2)
- 光透明性基板上に配線を形成する工程と、
前記光透明性基板上に薄膜トランジスタを形成する工程と、
前記光透明性基板上に有機EL素子を形成する工程と、
を含み、
前記有機EL素子を形成する工程は、
前記光透明性基板上の、前記配線又は前記薄膜トランジスタが形成されている領域以外の領域に窒化シリコンからなる高屈折率層を形成する工程と、
前記高屈折率層の側面に光反射部を形成する工程と、
前記高屈折率層の上面に回折格子を構成する溝を形成する工程と、
塗布乾燥焼成法により前記高屈折率層上にシリコン酸化膜を形成する工程と、
前記シリコン酸化膜の上方に透明性電極を形成する工程と、
前記透明性電極の上方に発光する有機層を形成する工程と、
前記有機層の上方に電極を形成する工程と、
を有し、
前記高屈折率層は、その上面が前記配線の上面及び前記薄膜トランジスタの上面よりも位置が上になるよう形成される、
ことを特徴とする有機EL表示装置の製造方法。 - 前記配線は複数であって互いに直交するように配置され、
前記薄膜トランジスタは前記複数の配線の各交点近傍に配置され、
前記有機EL素子は前記複数の配線で囲まれた夫々の領域に配置される、
ことを特徴とする請求項1に記載の有機EL表示装置の製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010020317A JP4561935B2 (ja) | 2010-02-01 | 2010-02-01 | 有機el表示装置の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010020317A JP4561935B2 (ja) | 2010-02-01 | 2010-02-01 | 有機el表示装置の製造方法 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004078910A Division JP2005268046A (ja) | 2004-03-18 | 2004-03-18 | 有機el素子及び有機el表示装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010097953A JP2010097953A (ja) | 2010-04-30 |
JP4561935B2 true JP4561935B2 (ja) | 2010-10-13 |
Family
ID=42259462
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010020317A Expired - Lifetime JP4561935B2 (ja) | 2010-02-01 | 2010-02-01 | 有機el表示装置の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4561935B2 (ja) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002229482A (ja) * | 2001-01-30 | 2002-08-14 | Semiconductor Energy Lab Co Ltd | 発光装置 |
JP2003115377A (ja) * | 2001-10-03 | 2003-04-18 | Nec Corp | 発光素子、その製造方法およびこれを用いた表示装置 |
JP2003163075A (ja) * | 2001-11-28 | 2003-06-06 | Nec Corp | 有機el素子およびその製造方法 |
JP2003257620A (ja) * | 2002-02-27 | 2003-09-12 | Samsung Sdi Co Ltd | 表示装置及びその製造方法 |
JP2004006332A (ja) * | 2002-04-24 | 2004-01-08 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
JP2004022438A (ja) * | 2002-06-19 | 2004-01-22 | Sharp Corp | 表示装置 |
-
2010
- 2010-02-01 JP JP2010020317A patent/JP4561935B2/ja not_active Expired - Lifetime
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002229482A (ja) * | 2001-01-30 | 2002-08-14 | Semiconductor Energy Lab Co Ltd | 発光装置 |
JP2003115377A (ja) * | 2001-10-03 | 2003-04-18 | Nec Corp | 発光素子、その製造方法およびこれを用いた表示装置 |
JP2003163075A (ja) * | 2001-11-28 | 2003-06-06 | Nec Corp | 有機el素子およびその製造方法 |
JP2003257620A (ja) * | 2002-02-27 | 2003-09-12 | Samsung Sdi Co Ltd | 表示装置及びその製造方法 |
JP2004006332A (ja) * | 2002-04-24 | 2004-01-08 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
JP2004022438A (ja) * | 2002-06-19 | 2004-01-22 | Sharp Corp | 表示装置 |
Also Published As
Publication number | Publication date |
---|---|
JP2010097953A (ja) | 2010-04-30 |
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