JP4529447B2 - Semiconductor device and manufacturing method thereof - Google Patents

Description

  The present invention relates to a semiconductor device having a circuit configuration including an antenna coil, such as a non-contact IC card, and a manufacturing method thereof.

  Cash cards, credit cards, and the like that are widely used at present are provided with a magnetic stripe on a plastic card so that information recorded thereon can be read. Such a magnetic recording system has the drawbacks that information can be easily decoded by a third party and the amount of information that can be recorded is small.

  Therefore, in recent years, an IC card equipped with an IC chip having functions such as a memory and a CPU has been developed and is reaching a practical stage. Above all, as a non-contact IC card that transmits and receives signals in a non-contact manner, an induction voltage is generated in the antenna coil of the responder (non-contact IC card) using electromagnetic waves emitted from an interrogator (reader / writer) and used as a power source. At the same time, attention has been focused on data communication.

  As such a non-contact IC card, the basic circuit configuration is that an antenna coil pattern and a circuit pattern are formed on one side of a plastic film, and a through-hole is formed on the back side of the antenna coil pattern and circuit pattern. Patent Document 1 discloses an IC card in which an IC chip is directly connected face-down to a substrate on which a jumper pattern to be connected is formed via an anisotropic conductive film and sandwiched between plastic films which are outer layers of the IC card. Proposed.

  Conventionally, in an IC chip used for a semiconductor device such as an IC card, a connection electrode connected to an antenna is formed on the circuit formation surface (lower surface) of the IC by gold plating, and an anisotropic conductive film is interposed on the connection electrode. Connected to the antenna circuit pattern.

FIG. 2 shows one embodiment of a conventional semiconductor device. The IC chip 102 mounted on the circuit layer substrate is provided with a connection terminal connected to the antenna on the circuit formation surface on the lower surface. ) And is connected to the circuit layer substrate 101 by heating and pressure bonding via the anisotropic conductive film 103.
JP-A-8-310172

  When the IC chip 102 is mounted in a card laminated with a plastic film such as an IC card, if the chip size is 2 mm square or more and the chip thickness is thick (150 μm or more), the machine for bending, twisting, etc. There was a problem that it was weak in the reliability of the system.

  On the other hand, in the connection by single-sided bumps of IC, when the chip size is reduced to 1 mm square or less, the line / space of the antenna circuit connection portion is narrowed, which requires high-definition circuit formation technology and chip mounting. Position alignment is difficult, and high positional accuracy is required for chip mounting.

  Further, in terms of communication characteristics and reliability of the semiconductor device, the connection using only the anisotropic conductive film 103 connects the IC bump and the antenna circuit through the conductive particles, so that the contact area is small, and the communication characteristics. There has been a problem of instability of the network and lack of long-term connection reliability.

  An object of the present invention is to provide a semiconductor device having a high positional accuracy with respect to a mounting position and having excellent connection reliability even when the chip size of an IC is reduced to 1 mm square or less, and a manufacturing method thereof.

  In order to solve the above-described problems, a semiconductor device according to the present invention includes a first circuit layer having a conductive layer formed on a surface, an IC element having electrodes formed on both surfaces, and a conductive layer formed on the surface. In the semiconductor device including the second circuit layer, the one electrode of the first circuit layer and the IC element, and the other electrode of the IC element and the second circuit layer are each made of metal by ultrasonic waves. Connected by bonding.

  In addition, a semiconductor device according to the present invention includes a first circuit layer having a conductive layer formed on the surface, an IC element having electrodes formed on both sides, and a second circuit layer having a conductive layer formed on the surface. In addition to the first electrode of the first circuit layer and the IC element and the second electrode layer of the IC element and the second circuit layer, the first and second circuit layers include: Each is connected by ultrasonic metal bonding.

  The conductive layer of the circuit layer and the electrode of the IC element are preferably connected by metal bonding. The first and second conductive layers are preferably metal foils.

  It is preferable that a slit is provided in the conductive layer of the first circuit layer.

  The slit is preferably L-shaped or T-shaped.

  An anisotropic conductive film or an anisotropic conductive adhesive is interposed between the first electrode of the first circuit layer and the IC element, and the other electrode of the IC element and the second circuit layer, respectively, The first circuit layer and the one electrode of the IC element, and the other electrode of the IC element and the second circuit layer are each ultrasonically transmitted through an anisotropic conductive film or an anisotropic conductive adhesive. It is preferable that they are connected by metal bonding.

  Anisotropic conductive films between the first circuit layer and one electrode of the IC element, the other electrode of the IC element and the second circuit layer, and the first and second circuit layers, respectively Alternatively, an anisotropic conductive adhesive is interposed, and the first circuit layer and one electrode of the IC element, the other electrode of the IC element and the second circuit layer, and the first and second circuits The layers are preferably connected to each other by ultrasonic metal bonding via an anisotropic conductive film or an anisotropic conductive adhesive.

  The conductive layer of the first or second circuit layer is preferably an aluminum foil.

  The IC element preferably has a thickness of 100 μm or less.

  The size of the IC element is preferably 1 mm square or less.

  A method of manufacturing a semiconductor device according to the present invention includes a first circuit layer having a conductive layer formed on a surface, an IC element having electrodes formed on both surfaces, and a second circuit layer having a conductive layer formed on the surface. A method of manufacturing a semiconductor device including: one electrode of the first circuit layer and the IC element; and the other electrode of the IC element and the second circuit layer are respectively joined by ultrasonic waves. The step of connecting by.

  An anisotropic conductive film or an anisotropic conductive adhesive is interposed between the first electrode of the first circuit layer and the IC element, and the other electrode of the IC element and the second circuit layer, respectively, The step of connecting comprises connecting one electrode of the first circuit layer and the IC element, the other electrode of the IC element and the second circuit layer via an anisotropic conductive film or an anisotropic conductive adhesive. In addition, it is preferable that the connection is performed by metal bonding using ultrasonic waves.

  The method for manufacturing a semiconductor device according to the present invention includes a first circuit layer having a conductive layer formed on a surface, an IC element having electrodes formed on both surfaces, and a second circuit layer having a conductive layer formed on the surface. A method of manufacturing a semiconductor device including a circuit layer, wherein the first circuit layer and one electrode of the IC element, the other electrode of the IC element and the second circuit layer, the first and There is a step of connecting the second circuit layer to each other by metal bonding using ultrasonic waves.

  Anisotropic conductive films between the first circuit layer and one electrode of the IC element, the other electrode of the IC element and the second circuit layer, and the first and second circuit layers, respectively Or the anisotropic conductive adhesive is interposed, and the connecting step includes the first circuit layer, one electrode of the IC element, the other electrode of the IC element, the second circuit layer, and the first circuit layer. The first and second circuit layers are preferably connected to each other by metal bonding using ultrasonic waves via an anisotropic conductive film or an anisotropic conductive adhesive.

  When the chip size of the IC element is reduced to 1 mm square or less by the present invention, bumps and circuit layers formed on one surface of the IC element by using an IC element having electrodes formed on both sides, Since the bump formed on the other surface of the IC, the connection cover, and the connection cover and the circuit layer are metal-bonded by ultrasonic waves, the mounting position accuracy with respect to the mounting position can be largely secured, and the semiconductor device has excellent connection reliability. Can be provided.

  The present invention will be described with reference to the drawings. FIG. 1 is a diagram showing a semiconductor device of the present invention. FIG. 1A is a top view of the semiconductor device as viewed from above, and FIG. 1B is a cross-sectional view of the semiconductor device as viewed from the right side.

  As the circuit layer 1 used in the present invention, as shown in FIG. 1B, a plastic film 5 was used as a substrate, and an aluminum foil 4 was bonded to the surface thereof with an adhesive. As shown in FIG. 1A, the circuit layer 1 is formed with an excitation slit 10 having a size of 2.5 mm (width) × 55 mm (length) and a length of 5 mm and a width of 0.5 mm. The circuit layer 1 that operates as an antenna circuit is formed by printing an etching resist on the aluminum foil 4 in advance by a gravure printing method, drying, and performing etching. The width of the excitation slit 10 after the etching process was a finished dimension value of 0.5 ± 0.1 mm. The IC element 2 mounted on the circuit layer 1 was 0.5 mm × 0.5 mm in size and 50 μm in thickness by back grinding. The electrodes connected to the substrate of the circuit layer 1 formed on the IC element 2 are formed on the upper and lower sides of the IC element 2, respectively, and the bump size is an Au bump having a size of 300 μm × 400 μm and a height of 15 μm.

  The Au bump 7 formed on the lower part of the IC element 2 and the circuit layer 1 are joined by heating and pressure bonding using ultrasonic waves through the anisotropic conductive film 3, and the aluminum foil 4 on the surface of the circuit layer 1. Then, the Au-aluminum bonding is performed at the ultrasonic bonding portion 13. On the other hand, the Au bump 7 formed on the upper part of the IC element 2 is also heated and pressure-bonded with the upper connection cover 8 by ultrasonic waves through the anisotropic conductive film 3 and bonded at the ultrasonic bonding portion 13 ( Au-aluminum bonding).

  The lower first circuit layer 1 and the upper second circuit layer 8 are heated and pressure-bonded using ultrasonic waves at the ultrasonic bonding portion 13 of the connection point 9 through the anisotropic conductive film 3 as described above. And bonded (aluminum-aluminum bonding). At least one or more of the first circuit layer 1 and the second circuit layer 8 can have a transmission / reception function or a transmission / reception function.

  In place of the aluminum foil 4 of the circuit layer 1 of the present invention, a metal foil such as copper can be used, but aluminum is preferable in terms of cost during mass production. The thickness of the metal foil is preferably 5 to 30 μm. If the thickness is less than 5 μm, the resistance value is large and is not practical as a circuit. If the thickness exceeds 50 μm, it becomes too thick and it becomes difficult to form a circuit shape by etching.

  The circuit layer 1 used in the present invention is formed of a metal-clad laminate, and this metal-clad laminate is obtained by laminating a metal foil with a base material such as a plastic film or a reinforcing material / resin composite with an adhesive. It is preferable to use a metal foil directly bonded to a substrate. Thermosetting resins and thermoplastic resins are used as resins used for reinforcing materials such as paper and glass fiber.

  As thermosetting resin, phenol resin, urea resin, melamine resin, alkyd resin, acrylic resin, unsaturated polyester resin, diallyl phthalate resin, epoxy resin, silicone resin, resin synthesized from cyclopentadiene, tris (2-hydroxyethyl) Resin containing isocyanurate, resin synthesized from aromatic nitrile, trimerized aromatic dicyanamide resin, resin containing triallyltrimethacrylate, furan resin, ketone resin, xylene resin, thermosetting resin containing condensed polycyclic aromatic Etc.

  As thermoplastic resins, polyolefin resins such as polyethylene, polypropylene, 4-methylpentene-1 resin, polybutene-1 resin, and high-pressure ethylene copolymer, styrene resins, polyvinyl chloride resins, polyvinylidene chloride resins, polyvinyl alcohol resins , Polyacrylonitrile resin, polyacrylic acid plastic resin, diene plastic resin, polyimide resin, polyester resin, polycarbonate resin, polyacetal resin, fluorine resin, polyurethane plastic resin, polystyrene thermoplastic elastomer, polyolefin thermoplastic elastomer, Polyurethane thermoplastic elastomer, polyester thermoplastic elastomer, polyamide thermoplastic elastomer, low crystalline 1,2-polybutadiene, chlorinated Rimmer type thermoplastic elastomers, fluorine-based thermoplastic elastomer, or a thermoplastic elastomer, such as ion crosslinked thermoplastic elastomers.

  As the adhesive, a thermosetting resin, a thermoplastic resin, rubber, or an anaerobic adhesive can be used. Thermosetting resins include epoxy resin, bismaleimide triazine resin, polyimide resin, cyanoacrylate resin, phenol resin, unsaturated polyester resin, melamine resin, urea resin, polyisocyanate resin, furan resin, resorcinol resin, xylene resin, benzoguanamine Resin, diallyl phthalate resin, siloxane-modified epoxy resin, siloxane-modified polyamideimide resin, benzocyclobutene resin, and the like, if necessary, a mixture of the curing agent, curing accelerator, etc., or heating these, A semi-cured one can be used.

  As thermoplastic resins, polycarbonate resins, polysulfone resins, polyetherimide resins, thermoplastic polyimide resins, tetrafluoroethylene resins, hexafluoropolypropylene resins, polyetheretherketone resins, vinyl chloride resins, polyethylene resins, polyamideimides Examples thereof include resins, polyphenylene sulfide resins, polyoxybenzoate resins, and the like, and if necessary, those obtained by mixing their curing agents, curing accelerators, etc., or those that are heated to be semi-cured can be used.

  Examples of the rubber include natural rubber, nitrile rubber, butadiene rubber, silicone rubber, isobutylene rubber, and the like, and a mixture of such a crosslinking agent can be used when necessary. The thickness of the adhesive is preferably 3 to 50 μm.

  As plastic films, polyesters such as polyethylene terephthalate resin (PET) and polyethylene naphthalate resin (PEN), polyolefins such as polyethylene resin, polypropylene resin, polystyrene resin and EVA, vinyl such as polyvinyl chloride resin and polyvinylidene chloride resin Resin, polysulfone resin, polyethersulfone resin, polycarbonate resin, polyamide resin, polyamideimide resin, polyimide resin, acrylic resin, polycarbonate resin, polyetherimide resin, thermoplastic polyimide resin, tetrafluoropolyethylene resin, hexafluoride Examples thereof include films of polypropylene resin, polyether ether ketone resin, polyphenylene sulfide resin, polyoxybenzoate resin and the like.

  As shown in FIG. 1 (a), a laminated plate obtained by bonding an aluminum foil 4 having a thickness of 9 μm as a metal foil to a polyethylene terephthalate film having a thickness of 50 μm as a substrate 5 is used. 1 is formed by printing and drying an etching resist (heat drying type alkali-soluble paint) by a gravure printing method, and unnecessary portions of the aluminum foil 4 are removed by etching with a ferric chloride solution. As shown in (a), an excitation slit 10 having a size of 2.5 mm (width) × 55 mm (length) and a length of 5 mm and a width of 0.5 mm was formed in the circuit layer 1. The width of the excitation slit 10 after the etching process was a finished dimension value of 0.5 ± 0.1 mm. As the IC element 2 mounted on the circuit layer 1, a size of 0.5 mm × 0.5 mm and a thickness of 50 μm was used. Au bumps having a bump size of 300 μm × 400 μm and a height of 15 μm are formed above and below the IC element 2, respectively. As for the electrode connected to the circuit layer 1 formed on the IC element 2, the Au bump 7 formed on the lower part of the IC element 2 and the circuit layer 11 are heated and pressure-bonded by ultrasonic waves through the anisotropic conductive film 3. The ultrasonic bonding portion 13 is bonded (Au-aluminum bonding).

  On the other hand, the Au bump 7 formed on the upper part of the IC element 2 is also bonded to the upper connection cover 8 by ultrasonic waves at the ultrasonic bonding portion 13 via the anisotropic conductive film 3 (Au-aluminum bonding). )did.

  The lower circuit layer 1 and the upper connection cover 8 are heated and pressure-bonded by ultrasonic waves at the connection point 9 through the anisotropic conductive film 3 and bonded at the ultrasonic bonding portion 13 (aluminum-aluminum bonding). ) To fabricate a semiconductor device.

  In addition, according to the present embodiment, when the chip size of the IC element is as small as 1 mm square or less and the chip thickness is as thin as 100 μm or less, when it is molded into a card or tag shape, it is resistant to bending and twisting. A semiconductor device that is strong and has high mechanical reliability can be provided.

It is a figure which shows one Example of the semiconductor device by this invention. It is sectional drawing of one Example of the semiconductor device by a prior art.

Explanation of symbols

1. First circuit layer IC element 3. Anisotropic conductive film Aluminum foil (conductive layer)
5). Base material (plastic film)
7). Au bump (electrode)
8). Second circuit layer 9. Connection point 10. Excitation slit 12. Aluminum oxide layer 13. Ultrasonic bonding part 101. Circuit layer 102. IC with single-sided bump
103. Anisotropic conductive film

Claims (7)

In a semiconductor device including a first circuit layer having a conductive layer formed on a surface, an IC element having electrodes formed on both surfaces, and a second circuit layer having a conductive layer formed on the surface,
In addition to the first electrode of the first circuit layer and the IC element, the other electrode of the IC element and the second circuit layer, the first and second circuit layers are each made of ultrasonic metal. A semiconductor device characterized by being connected by bonding. The semiconductor device according to claim 1 , wherein a slit is provided in the conductive layer of the first circuit layer. The semiconductor device according to claim 2 , wherein the slit is L-shaped or T-shaped. The conductive layer of the first or second circuit layer, a semiconductor device according to any one of claims 1 to 3, characterized in that an aluminum foil. The semiconductor device according to any one of claims 1 to 4, wherein a thickness of the IC elements is 100μm or less. The semiconductor device according to any one of claims 1 to 5, wherein the size of the IC element is below 1mm square. A method for manufacturing a semiconductor device, comprising: a first circuit layer having a conductive layer formed on a surface; an IC element having electrodes formed on both sides; and a second circuit layer having a conductive layer formed on the surface. ,
The first electrode of the first circuit layer and the IC element, the other electrode of the IC element and the second circuit layer, and the first and second circuit layers are connected by metal bonding using ultrasonic waves, respectively. A method for manufacturing a semiconductor device, comprising the step of:

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