JP4516587B2

JP4516587B2 - Power storage circuit

Info

Publication number: JP4516587B2
Application number: JP2007222830A
Authority: JP
Inventors: 守宇賀神; 賢司鈴木; 昇男佐藤; 一善小野
Original assignee: Nippon Telegraph and Telephone Corp
Current assignee: Nippon Telegraph and Telephone Corp
Priority date: 2007-08-29
Filing date: 2007-08-29
Publication date: 2010-08-04
Anticipated expiration: 2027-08-29
Also published as: JP2009055769A

Description

本発明は、発電電流の小さい交流発電器からの電荷を効率よく蓄電する蓄電回路に関する。 The present invention relates to a power storage circuit that efficiently stores charges from an AC generator having a small generated current.

ユビキタス情報社会の実現に向けて、センサを備えた多数の情報発信端末により構成されるセンサネットワークの研究開発が進んでいる。これらの情報発信端末はメンテナンスフリーであることが求められており、その課題の一つにバッテリーフリー化、すなわち情報発信端末自身が発電器をもち、電池を不要とする構成が必要になっている。 To realize a ubiquitous information society, research and development of a sensor network composed of a large number of information transmission terminals equipped with sensors is progressing. These information transmission terminals are required to be maintenance-free, and one of the issues is that they need to be battery-free, that is, the information transmission terminal itself has a generator and does not require a battery. .

一方、情報発信端末は小型化に伴って発電器も極小化する必要があり、そのような発電器として振動や熱などの生活空間エネルギーを電気エネルギーに変換するもの（例えばマイクロ振動型発電器、ＭＥＭＳ発電器など）が注目されている（非特許文献１）。 On the other hand, it is necessary to minimize the generator as the information transmission terminal is miniaturized. As such a generator, a device that converts living space energy such as vibration and heat into electric energy (for example, a micro vibration generator, Attention has been focused on MEMS power generators (Non-Patent Document 1).

図８は、非特許文献１に記載の電源回路の構成例を示す。図において、電源回路は、交流電流発生器８１の両端子に、ショットキーダイオードのブリッジ接続による整流回路８２、容量８３を介して出力端子８４が接続された構成である。整流回路８２は、交流電流発生器８１から出力される交流電流を整流し、容量８３で平滑化して出力端子８４に取り出された電力が負荷回路８５に供給される。 FIG. 8 shows a configuration example of the power supply circuit described in Non-Patent Document 1. In the figure, the power supply circuit has a configuration in which an output terminal 84 is connected to both terminals of an alternating current generator 81 via a rectifier circuit 82 and a capacitor 83 by a bridge connection of Schottky diodes. The rectifier circuit 82 rectifies the alternating current output from the alternating current generator 81, smooths it with the capacitor 83, and supplies the electric power extracted to the output terminal 84 to the load circuit 85.

ここで、交流電流発生器８１は、微小な生活空間エネルギーを電気エネルギーに変換するために、その出力は電圧型ではなく電流型になっている。例えば、ＭＥＭＳ技術等により製作されるエレクトレットの振動を電流に変換する交流電流発生器８１は、その大きさが数十μｍから数ｍｍで、大きさにより１ｎＡ程度から数μＡ程度の交流電流を発生する。
Y.B.Jeon, et al.,"MEMS power generator with transverse mode thin film PZT", ELSEVIER, Sensors and Actuators A 122 (2005) pp.16-22 Here, since the alternating current generator 81 converts minute living space energy into electric energy, its output is not a voltage type but a current type. For example, the alternating current generator 81 that converts the vibration of the electret manufactured by the MEMS technology into an electric current has an amplitude of several tens of μm to several mm, and generates an alternating current of about 1 nA to several μA depending on the size. To do.
YBJeon, et al., "MEMS power generator with transverse mode thin film PZT", ELSEVIER, Sensors and Actuators A 122 (2005) pp.16-22

ところで、図８に示す電源回路を用いる場合、交流電流発生器８１の出力電流が例えば数μＡ程度あれば負荷回路８５を駆動することができるが、出力電流がｎＡ級になると負荷回路８５を駆動できなくなる。その場合には、交流電流発生器８１の微小な出力電流から電荷を蓄電する蓄電回路が必要になる。一般的な蓄電回路としては、容量８３と負荷回路８５との間にスイッチを設け、容量８３が所要電圧になるまでスイッチをオフとし、所要電圧になったときにスイッチをオンにして容量８３に蓄積した電荷を負荷回路８５に供給する構成が考えられる。 When the power supply circuit shown in FIG. 8 is used, the load circuit 85 can be driven if the output current of the AC current generator 81 is about several μA, for example. However, when the output current becomes nA class, the load circuit 85 is driven. become unable. In that case, a storage circuit that stores charges from the minute output current of the AC current generator 81 is required. As a general power storage circuit, a switch is provided between the capacitor 83 and the load circuit 85, the switch is turned off until the capacitor 83 reaches a required voltage, and the switch is turned on when the required voltage is reached. A configuration in which the accumulated charge is supplied to the load circuit 85 is conceivable.

しかし、このような蓄電回路の場合、交流電流発生器８１の出力電流がショットキーダイオードの逆バイアス時のリーク電流（10ｎＡ程度）を大きく上回れば問題ないが、出力電流がｎＡ級になるとリーク電流の影響が現れ、容量８３に蓄積された電荷が逆バイアス時にリーク電流として消失してしまい、電荷が貯まらない問題がある。 However, in such a storage circuit, there is no problem if the output current of the AC current generator 81 greatly exceeds the leakage current (about 10 nA) at the time of reverse bias of the Schottky diode, but if the output current becomes nA class, the leakage current As a result, the charge accumulated in the capacitor 83 disappears as a leakage current at the time of reverse bias, and the charge is not stored.

なお、本発明の適用を想定している情報発信端末は、例えば１時間ごとに数十ミリ秒だけ動作して所要の情報を送信するような間欠動作を行うものである。この場合、交流電流発生器の出力電流が微小であっても、待機時間中に動作に必要十分な電力を蓄電できる蓄電回路があれば対応可能になるが、上記のように蓄電中のリーク電流対策が必要になる。 In addition, the information transmission terminal which assumes application of this invention performs intermittent operation | movement which operate | moves only tens of milliseconds for every hour, for example, and transmits required information. In this case, even if the output current of the AC current generator is very small, it can be handled if there is a storage circuit that can store enough power for operation during the standby time. Countermeasures are required.

本発明は、以上の交流電流発生器の出力電流とリーク電流に関する問題点を考慮し、リーク電流を低減することにより出力電流が微小な交流電流発生器からの電荷を効率よく蓄電することができる蓄電回路を提供することを目的とする。 The present invention takes into account the above problems related to the output current and leakage current of the alternating current generator, and can efficiently store the charge from the alternating current generator with a small output current by reducing the leakage current. An object is to provide a power storage circuit.

第１の発明は、交流電流を発生する交流電流発生器と、交流電流発生器から出力される交流電流を整流する整流回路と、整流回路の出力端に接続され、交流電流発生器が出力する正の電荷を蓄積する電荷蓄積容量と、電荷蓄積容量に接続され、その蓄積電圧が所要電圧を超えたときにオンとし、所要電圧以下のときにオフに制御するスイッチ手段とを備え、スイッチ手段の制御により電荷蓄積容量の蓄積電圧が所要電圧を超えるまで交流電流発生器が出力する電荷を蓄積し、電荷蓄積容量の蓄積電圧が所要電圧を超えたときに電荷蓄積容量に蓄積された電荷による電力供給を行う構成である蓄電回路において、整流回路は、ｎＭＯＳトランジスタのソース端子とｐＭＯＳトランジスタのソース端子を直結し、ｎＭＯＳトランジスタのゲート端子とｐＭＯＳトランジスタのドレイン端子を直結し、ｎＭＯＳトランジスタのドレイン端子とｐＭＯＳトランジスタのゲート端子を直結し、ｎＭＯＳトランジスタのドレイン端子とｐＭＯＳトランジスタのドレイン端子を入出力端子とした第１の複合ダイオードを用いて構成し、ｐＭＯＳトランジスタのドレイン端子を交流電流発生器の出力端子に接続し、ｎＭＯＳトランジスタのドレイン端子を電荷蓄積容量に接続して正の電荷を蓄積する構成である。 1st invention is connected to the output terminal of the alternating current generator which generate | occur | produces alternating current, the rectification circuit which rectifies the alternating current output from an alternating current generator, and a rectification circuit, and an alternating current generator outputs A charge storage capacitor for storing positive charge, and a switch unit connected to the charge storage capacitor, which is turned on when the storage voltage exceeds a required voltage and controlled to be turned off when the storage voltage is lower than the required voltage. The charge output from the AC current generator is accumulated until the accumulated voltage of the charge storage capacitor exceeds the required voltage by the control of the charge storage capacitor, and the charge accumulated in the charge storage capacitor when the accumulated voltage of the charge storage capacitor exceeds the required voltage. In the power storage circuit configured to supply power, the rectifier circuit directly connects the source terminal of the nMOS transistor and the source terminal of the pMOS transistor, and the gate terminal of the nMOS transistor. And the drain terminal of the pMOS transistor are directly connected, the drain terminal of the nMOS transistor and the gate terminal of the pMOS transistor are directly connected, and the first composite diode having the drain terminal of the nMOS transistor and the drain terminal of the pMOS transistor as the input / output terminal is used. In this configuration, the drain terminal of the pMOS transistor is connected to the output terminal of the alternating current generator, and the drain terminal of the nMOS transistor is connected to the charge storage capacitor to store positive charges.

第１の発明の蓄電回路において、第１の複合ダイオードと同じ構成の第２の複合ダイオードを備え、交流電流発生器の出力端子に、第２の複合ダイオードのｎＭＯＳトランジスタのドレイン端子を接続し、ｐＭＯＳトランジスタのドレイン端子を接地電位に接続した構成としてもよい。 The power storage circuit of the first invention comprises a second composite diode having the same configuration as the first composite diode, the drain terminal of the nMOS transistor of the second composite diode is connected to the output terminal of the alternating current generator, The drain terminal of the pMOS transistor may be connected to the ground potential.

第２の発明は、交流電流を発生する交流電流発生器と、交流電流発生器から出力される交流電流を整流する整流回路と、整流回路の出力端に接続され、交流電流発生器が出力する負の電荷を蓄積する電荷蓄積容量と、電荷蓄積容量に接続され、その蓄積電圧が所要電圧を超えたときにオンとし、所要電圧以下のときにオフに制御するスイッチ手段とを備え、スイッチ手段の制御により電荷蓄積容量の蓄積電圧が所要電圧を超えるまで交流電流発生器が出力する電荷を蓄積し、電荷蓄積容量の蓄積電圧が所要電圧を超えたときに電荷蓄積容量に蓄積された電荷による電力供給を行う構成である蓄電回路において、整流回路は、ｎＭＯＳトランジスタのソース端子とｐＭＯＳトランジスタのソース端子を直結し、ｎＭＯＳトランジスタのゲート端子とｐＭＯＳトランジスタのドレイン端子を直結し、ｎＭＯＳトランジスタのドレイン端子とｐＭＯＳトランジスタのゲート端子を直結し、ｎＭＯＳトランジスタのドレイン端子とｐＭＯＳトランジスタのドレイン端子を入出力端子とした第１の複合ダイオードを用いて構成し、ｎＭＯＳトランジスタのドレイン端子を交流電流発生器の出力端子に接続し、ｐＭＯＳトランジスタのドレイン端子を電荷蓄積容量に接続して負の電荷を蓄積する構成である。 2nd invention is connected to the output terminal of the alternating current generator which generate | occur | produces alternating current, the rectifier which rectifies the alternating current output from an alternating current generator, and the rectifier circuit, and an alternating current generator outputs A charge storage capacitor that stores negative charge, and a switch unit that is connected to the charge storage capacitor and that is turned on when the storage voltage exceeds a required voltage and is turned off when the storage voltage is lower than the required voltage. The charge output from the AC current generator is accumulated until the accumulated voltage of the charge storage capacitor exceeds the required voltage by the control of the charge storage capacitor, and the charge accumulated in the charge storage capacitor when the accumulated voltage of the charge storage capacitor exceeds the required voltage. In the power storage circuit configured to supply power, the rectifier circuit directly connects the source terminal of the nMOS transistor and the source terminal of the pMOS transistor, and the gate terminal of the nMOS transistor. And the drain terminal of the pMOS transistor are directly connected, the drain terminal of the nMOS transistor and the gate terminal of the pMOS transistor are directly connected, and the first composite diode having the drain terminal of the nMOS transistor and the drain terminal of the pMOS transistor as the input / output terminal is used. In this configuration, the drain terminal of the nMOS transistor is connected to the output terminal of the alternating current generator, and the drain terminal of the pMOS transistor is connected to the charge storage capacitor to store negative charges.

第２の発明の蓄電回路において、第１の複合ダイオードと同じ構成の第２の複合ダイオードを備え、交流電流発生器の出力端子に、第２の複合ダイオードのｐＭＯＳトランジスタのドレイン端子を接続し、ｎＭＯＳトランジスタのドレイン端子を接地電位に接続した構成としてもよい。 The power storage circuit of the second invention comprises a second composite diode having the same configuration as the first composite diode, the drain terminal of the pMOS transistor of the second composite diode is connected to the output terminal of the AC current generator, The drain terminal of the nMOS transistor may be connected to the ground potential.

第３の発明は、交流電流を発生する交流電流発生器と、交流電流発生器から出力される交流電流を整流する整流回路と、整流回路の出力端に接続され、交流電流発生器が出力する正および負の電荷をそれぞれ蓄積する第１および第２の電荷蓄積容量と、第１および第２の電荷蓄積容量に接続され、その蓄積電圧の差が所要電圧を超えたときにオンとし、所要電圧以下のときにオフに制御するスイッチ手段とを備え、スイッチ手段の制御により第１および第２の電荷蓄積容量の蓄積電圧の差が所要電圧を超えるまで交流電流発生器が出力する電荷を蓄積し、第１および第２の電荷蓄積容量の蓄積電圧の差が所要電圧を超えたときに電荷蓄積容量に蓄積された電荷による電力供給を行う構成である蓄電回路において、整流回路は、ｎＭＯＳトランジスタのソース端子とｐＭＯＳトランジスタのソース端子を直結し、ｎＭＯＳトランジスタのゲート端子とｐＭＯＳトランジスタのドレイン端子を直結し、ｎＭＯＳトランジスタのドレイン端子とｐＭＯＳトランジスタのゲート端子を直結し、ｎＭＯＳトランジスタのドレイン端子とｐＭＯＳトランジスタのドレイン端子を入出力端子とした第１および第２の複合ダイオードを用いて構成し、第１の複合ダイオードのｐＭＯＳトランジスタのドレイン端子を交流電流発生器の出力端子に接続し、ｎＭＯＳトランジスタのドレイン端子を第１の電荷蓄積容量に接続して正の電荷を蓄積し、第２の複合ダイオードのｎＭＯＳトランジスタのドレイン端子を交流電流発生器の出力端子に接続し、ｐＭＯＳトランジスタのドレイン端子を第２の電荷蓄積容量に接続して負の電荷を蓄積する構成である。 3rd invention is connected to the output terminal of the alternating current generator which generate | occur | produces alternating current, the rectifier circuit which rectifies the alternating current output from an alternating current generator, and an rectifier circuit, and an alternating current generator outputs Connected to the first and second charge storage capacitors that store positive and negative charges, respectively, and the first and second charge storage capacitors, and is turned on when the difference between the storage voltages exceeds the required voltage. Switch means for controlling off when the voltage is equal to or lower than the voltage, and stores the charge output from the alternating current generator until the difference between the storage voltages of the first and second charge storage capacitors exceeds the required voltage by the control of the switch means. In the power storage circuit that is configured to supply power using the charge stored in the charge storage capacitor when the difference between the storage voltages of the first and second charge storage capacitors exceeds a required voltage, the rectifier circuit includes an nMOS transistor. The source terminal of the transistor and the source terminal of the pMOS transistor are directly connected, the gate terminal of the nMOS transistor and the drain terminal of the pMOS transistor are directly connected, the drain terminal of the nMOS transistor and the gate terminal of the pMOS transistor are directly connected, and the drain terminal of the nMOS transistor The first and second composite diodes having the drain terminal of the pMOS transistor as an input / output terminal are used, the drain terminal of the pMOS transistor of the first composite diode is connected to the output terminal of the alternating current generator, and the nMOS transistor And the drain terminal of the second composite diode is connected to the output terminal of the alternating current generator, and the drain terminal of the pMOS transistor is connected to the drain terminal of the pMOS transistor. Second charge storage It is configured to accumulate the negative charges connected to the capacitor.

第３の発明の蓄電回路において、交流電流発生器および整流回路を複数備え、第１の電荷蓄積容量に、複数の整流回路を構成する複数の第１の複合ダイオードを並列に接続し、第２の電荷蓄積容量に、複数の整流回路を構成する複数の第２の複合ダイオードを並列に接続した構成としてもよい。 The power storage circuit of the third invention is provided with a plurality of alternating current generators and rectifier circuits, wherein a plurality of first composite diodes constituting the plurality of rectifier circuits are connected in parallel to the first charge storage capacitor, A plurality of second composite diodes constituting a plurality of rectifier circuits may be connected in parallel to the charge storage capacitor.

また、複数の交流電流発生器に代えて、１つの交流電流発生器から位相が異なる複数の交流電流を取り出し、それぞれ整流回路を介して第１および第２の電荷蓄積容量に接続する構成としてもよい。 Further, instead of a plurality of AC current generators, a plurality of AC currents having different phases may be taken out from one AC current generator and connected to the first and second charge storage capacitors via rectifier circuits, respectively. Good.

本発明は、交流電流発生器から出力される交流電流の整流回路として、ｐＭＯＳトランジスタとｎＭＯＳトランジスタを縦積みにした複合ダイオードを用いることにより、逆バイアス時のリーク電流を極めて小さくすることができる。また、スイッチ手段によって蓄電モードと放電モードを切り替えることにより、微小な発電量の交流電流発生器を用いても電荷を効率より蓄電し、微小な発電量から負荷回路を駆動可能な所要の電力を生成することができる。 In the present invention, the leakage current at the time of reverse bias can be extremely reduced by using a composite diode in which a pMOS transistor and an nMOS transistor are vertically stacked as a rectifier circuit for an alternating current output from an alternating current generator. In addition, by switching between the storage mode and the discharge mode with the switch means, even if an alternating current generator with a small amount of power generation is used, the charge can be stored more efficiently and the required power that can drive the load circuit from the small amount of power generation. Can be generated.

（第１の実施形態）
図１は、本発明の蓄電回路の第１の実施形態の第１の構成例を示す。
図において、交流電流発生器１０の出力は、ｎＭＯＳトランジスタとｐＭＯＳトランジスタから構成される複合ダイオード１１を介して電荷蓄積容量１２に接続されるとともに、抵抗１３を介して接地電位に接続される。電荷蓄積容量１２の他端は接地電位に接続される。また、複合ダイオード１１と電荷蓄積容量１２の接続部にはスイッチ１４を介して出力端子１５が接続されるとともに、電荷蓄積容量１２の電圧を検知してスイッチ１４のオンオフを制御する電圧検知回路１６が接続される。また、出力端子１５には、以上の蓄電回路から供給される電力により駆動される負荷回路１７が接続される。 (First embodiment)
FIG. 1 shows a first configuration example of the first embodiment of the power storage circuit of the present invention.
In the figure, the output of the alternating current generator 10 is connected to a charge storage capacitor 12 via a composite diode 11 composed of an nMOS transistor and a pMOS transistor, and is connected to a ground potential via a resistor 13. The other end of the charge storage capacitor 12 is connected to the ground potential. An output terminal 15 is connected to the connecting portion of the composite diode 11 and the charge storage capacitor 12 via a switch 14, and a voltage detection circuit 16 that detects the voltage of the charge storage capacitor 12 and controls on / off of the switch 14. Is connected. The output terminal 15 is connected to a load circuit 17 driven by the electric power supplied from the above storage circuit.

ここで、交流電流発生器１０は、微小な生活空間エネルギーを電気エネルギーに変換するために、例えばＭＥＭＳ技術等により製作されるエレクトレットの振動を電流に変換する構成であり、例えば１〜数十ｎＡ程度の交流電流を発生する。 Here, the alternating current generator 10 is configured to convert the vibration of an electret manufactured by, for example, MEMS technology into current in order to convert minute living space energy into electric energy, for example, 1 to several tens of nA. A certain amount of alternating current is generated.

複合ダイオード１１は、交流電流発生器１０側からｐＭＯＳトランジスタ、ｎＭＯＳトランジスタの順に配置し、ｎＭＯＳトランジスタのソース端子とｐＭＯＳトランジスタのソース端子を直結し、ｎＭＯＳトランジスタのゲート端子とｐＭＯＳトランジスタのドレイン端子を直結し、ｎＭＯＳトランジスタのドレイン端子とｐＭＯＳトランジスタのゲート端子を直結した構成である。ｎＭＯＳトランジスタのドレイン端子とｐＭＯＳトランジスタのドレイン端子がダイオードの入出力端子に相当し、ｐＭＯＳトランジスタ側が高電位のときに順バイアスである。この複合ダイオード１１の特長は、ダイオードを逆バイアスにしたときに、ダイオードを構成するｎＭＯＳトランジスタのゲート／ソース間電圧およびｐＭＯＳトランジスタのゲート／ソース間電圧が共に逆バイアスされるため、リーク電流がショットキーダイオードの逆バイアス時に比べて非常に小さいことである。 The composite diode 11 is arranged in the order of the pMOS transistor and the nMOS transistor from the AC current generator 10 side, directly connects the source terminal of the nMOS transistor and the source terminal of the pMOS transistor, and directly connects the gate terminal of the nMOS transistor and the drain terminal of the pMOS transistor. The drain terminal of the nMOS transistor and the gate terminal of the pMOS transistor are directly connected. The drain terminal of the nMOS transistor and the drain terminal of the pMOS transistor correspond to the input / output terminal of the diode, and are forward biased when the pMOS transistor side is at a high potential. The feature of this composite diode 11 is that when the diode is reverse-biased, the gate-source voltage of the nMOS transistor and the gate-source voltage of the pMOS transistor constituting the diode are both reverse-biased, so that the leakage current is shot. This is very small compared to the reverse bias of the key diode.

交流電流発生器１０から正の電荷が供給される場合、交流電流発生器１０の出力電位が正になる。このため、複合ダイオード１１のｐＭＯＳトランジスタ側が高電位になり、複合ダイオード１１が順バイアスになって電流が流れ、電荷蓄積容量１２に電荷が蓄積される。また、交流電流発生器１０から負の電荷が供給される場合、交流電流発生器１０の出力電位が負になる。このため、複合ダイオード１１のｐＭＯＳトランジスタ側が低電位になり、複合ダイオード１１が逆バイアスになって電流が流れず、抵抗１３および接地電位側に電流が流れる。このとき、逆バイアスの複合ダイオード１１のリーク電流は非常に小さいので、交流電流発生器１０の出力電位が正のときに蓄積される電荷が負のときに消失する電荷に比べて桁違いに大きく、電荷蓄積容量１２に徐々に電荷が蓄積される。 When a positive charge is supplied from the alternating current generator 10, the output potential of the alternating current generator 10 becomes positive. For this reason, the pMOS transistor side of the composite diode 11 becomes a high potential, the composite diode 11 becomes forward biased, a current flows, and the charge is stored in the charge storage capacitor 12. Moreover, when a negative charge is supplied from the alternating current generator 10, the output potential of the alternating current generator 10 becomes negative. For this reason, the pMOS transistor side of the composite diode 11 becomes a low potential, the composite diode 11 is reverse-biased and no current flows, and a current flows on the resistor 13 and the ground potential side. At this time, the leakage current of the reverse-biased composite diode 11 is very small, so that the charge accumulated when the output potential of the AC current generator 10 is positive is orders of magnitude larger than the charge that disappears when the output potential is negative. Charge is gradually accumulated in the charge storage capacitor 12.

このような動作により、スイッチ１４がオフであれば電荷蓄積容量１２に徐々に電荷が蓄積され、蓄積された電圧を電圧検知回路１６が検知し、所要電圧に達するとスイッチ１４をオフからオンに制御し、電荷蓄積容量１２からスイッチ１４、出力端子１５を介して負荷回路１７に正電荷による電力が供給される。このとき、交流電流発生器１０から電荷の供給は続いているが、電荷蓄積容量１２から負荷回路１７に供給される電荷に比べて無視される量である。電荷蓄積容量１２の電圧が低下すると、電圧検知回路１６が検知してスイッチ１４をオンからオフに制御し、再び交流電流発生器１０から複合ダイオード１１を介して電荷蓄積容量１２に徐々に電荷が蓄積される。なお、電圧検知回路１６は、負荷回路１７よりも低電力で動作するものとする。 With such an operation, if the switch 14 is off, electric charge is gradually accumulated in the charge storage capacitor 12, and the voltage detection circuit 16 detects the accumulated voltage. When the required voltage is reached, the switch 14 is turned on from off. The electric power by the positive charge is supplied from the charge storage capacitor 12 to the load circuit 17 through the switch 14 and the output terminal 15. At this time, the supply of charge from the alternating current generator 10 continues, but the amount is negligible compared to the charge supplied from the charge storage capacitor 12 to the load circuit 17. When the voltage of the charge storage capacitor 12 decreases, the voltage detection circuit 16 detects it and controls the switch 14 from on to off, and the charge is gradually transferred from the alternating current generator 10 to the charge storage capacitor 12 via the composite diode 11 again. Accumulated. It is assumed that the voltage detection circuit 16 operates with lower power than the load circuit 17.

図２は、本発明の蓄電回路の第１の実施形態の第２の構成例を示す。
本構成例の特徴は、第１の構成例において交流電流発生器１０の出力と接地電位との間に接続された抵抗１３に代えて、ｎＭＯＳトランジスタとｐＭＯＳトランジスタから構成される複合ダイオード１８を用いたところにある。複合ダイオード１８は、複合ダイオード１１と同様の構成であるが、交流電流発生器１０側からｎＭＯＳトランジスタ、ｐＭＯＳトランジスタの順に配置され、複合ダイオード１１と逆向きになる。
ここで、交流電流発生器１０の出力電位が正のとき、複合ダイオード１１のｐＭＯＳトランジスタ側が高電位になり、複合ダイオード１１が順バイアスになって電流が流れるとともに、複合ダイオード１８のｎＭＯＳトランジスタ側が高電位になり、複合ダイオード１８が逆バイアスになって電流は流れない。また、交流電流発生器１０の出力電位が負のとき、複合ダイオード１１のｐＭＯＳトランジスタ側が低電位になり、複合ダイオード１１が逆バイアスになって電流が流れないとともに、複合ダイオード１８のｎＭＯＳトランジスタ側が低電位になり、複合ダイオード１８が順バイアスになって電流が流れる。 FIG. 2 shows a second configuration example of the first embodiment of the power storage circuit of the present invention.
The feature of this configuration example is that a composite diode 18 composed of an nMOS transistor and a pMOS transistor is used in place of the resistor 13 connected between the output of the alternating current generator 10 and the ground potential in the first configuration example. It is where it was. The composite diode 18 has the same configuration as that of the composite diode 11, but is arranged in the order of an nMOS transistor and a pMOS transistor from the alternating current generator 10 side, and is opposite to the composite diode 11.
Here, when the output potential of the alternating current generator 10 is positive, the pMOS transistor side of the composite diode 11 becomes a high potential, the composite diode 11 becomes forward biased and a current flows, and the nMOS transistor side of the composite diode 18 is high. It becomes a potential, the composite diode 18 is reverse-biased, and no current flows. Further, when the output potential of the AC current generator 10 is negative, the pMOS transistor side of the composite diode 11 becomes a low potential, the composite diode 11 is reverse biased and no current flows, and the nMOS transistor side of the composite diode 18 is low. When the potential is reached, the composite diode 18 becomes forward biased and current flows.

第１および第２の構成例において、交流電流発生器１０から出力される交流電流が複合ダイオード１１を介して整流され、電荷蓄積容量１２に蓄積される動作原理は共通である。第１の構成例では、交流電流発生器１０の出力電位が正のときは抵抗１３の抵抗値が高く、負のときは抵抗値が低い方がよいので、最適な抵抗値が存在し、その値は電流量に依存することになる。したがって、蓄電効率を向上させるためには交流電流発生器１０の出力電流量に応じて抵抗値を調整する必要がある。一方、第２の構成例では、複合ダイオード１１と相補的な動作をする複合ダイオード１８が用いられるので、交流電流発生器１０の出力電流量に依存することなく、電荷を電荷蓄積容量１２に効率よく蓄積することができる利点がある。 In the first and second configuration examples, the operating principle in which the alternating current output from the alternating current generator 10 is rectified via the composite diode 11 and stored in the charge storage capacitor 12 is common. In the first configuration example, when the output potential of the alternating current generator 10 is positive, the resistance value of the resistor 13 is high, and when the output potential is negative, the resistance value is preferably low. The value will depend on the amount of current. Therefore, in order to improve the power storage efficiency, it is necessary to adjust the resistance value according to the amount of output current of the AC current generator 10. On the other hand, in the second configuration example, since the composite diode 18 that operates complementary to the composite diode 11 is used, the charge is efficiently transferred to the charge storage capacitor 12 without depending on the output current amount of the AC current generator 10. There is an advantage that can be accumulated well.

（第２の実施形態）
図３は、本発明の蓄電回路の第２の実施形態の第１の構成例を示す。
本実施形態の特徴は、第１の実施形態の第１の構成例における複合ダイオード１１の向きを交流電流発生器１０に対して逆にしたところにある。 (Second Embodiment)
FIG. 3 shows a first configuration example of the second embodiment of the power storage circuit of the present invention.
The feature of this embodiment is that the direction of the composite diode 11 in the first configuration example of the first embodiment is reversed with respect to the AC current generator 10.

すなわち、交流電流発生器１０の出力電位が正のとき、複合ダイオード１１のｎＭＯＳトランジスタ側が高電位になり、逆バイアスになって電流が流れず、抵抗１３および接地電位側に電流が流れる。また、交流電流発生器１０の出力電位が負のとき、複合ダイオード１１のｎＭＯＳトランジスタ側が低電位になり、複合ダイオード１１が順バイアスになって電流が流れ、電荷蓄積容量１２に負の電荷が蓄積される。このような動作により、スイッチ１４がオフであれば電荷蓄積容量１２に徐々に負の電荷が蓄積され、蓄積された電圧を電圧検知回路１６が検知し、所要電圧に達するとスイッチ１４をオフからオンに制御し、電荷蓄積容量１２からスイッチ１４、出力端子１５を介して負荷回路１７に負電荷による電力が供給される。電荷蓄積容量１２の電圧が低下すると、電圧検知回路１６が検知してスイッチ１４をオンからオフに制御し、再び交流電流発生器１０から複合ダイオード１１を介して電荷蓄積容量１２に徐々に負の電荷が蓄積される。 That is, when the output potential of the alternating current generator 10 is positive, the nMOS transistor side of the composite diode 11 becomes a high potential, the reverse bias is applied and no current flows, and the current flows on the resistor 13 and the ground potential side. Further, when the output potential of the AC current generator 10 is negative, the composite diode 11 has a low potential on the nMOS transistor side, the composite diode 11 becomes forward biased, current flows, and negative charge is stored in the charge storage capacitor 12. Is done. By such an operation, if the switch 14 is turned off, negative charges are gradually accumulated in the charge storage capacitor 12, the voltage detection circuit 16 detects the accumulated voltage, and when the required voltage is reached, the switch 14 is turned off. The charge storage capacitor 12 supplies power due to negative charges to the load circuit 17 via the switch 14 and the output terminal 15. When the voltage of the charge storage capacitor 12 decreases, the voltage detection circuit 16 detects the voltage and controls the switch 14 from on to off, and then gradually becomes negative again from the alternating current generator 10 to the charge storage capacitor 12 via the composite diode 11. Charge is accumulated.

図４は、本発明の蓄電回路の第２の実施形態の第２の構成例を示す。
本構成例の特徴は、第１の実施形態の第２の構成例における複合ダイオード１１および複合ダイオード１８の向きを交流電流発生器１０に対して逆にしたところにある。本構成例の動作は、第２の実施形態の第１の構成例と同様に負の電荷が電荷蓄積容量１２に蓄積され、スイッチ１４を介して負荷回路１７に負電荷による電力が供給される。 FIG. 4 shows a second configuration example of the second embodiment of the power storage circuit of the present invention.
The feature of this configuration example is that the direction of the composite diode 11 and the composite diode 18 in the second configuration example of the first embodiment is reversed with respect to the AC current generator 10. In the operation of this configuration example, negative charges are accumulated in the charge storage capacitor 12 as in the first configuration example of the second embodiment, and power due to the negative charges is supplied to the load circuit 17 via the switch 14. .

（第３の実施形態）
図５は、本発明の蓄電回路の第３の実施形態を示す。
図において、交流電流発生器１０の出力は、ｎＭＯＳトランジスタとｐＭＯＳトランジスタから構成される複合ダイオード１１を介して電荷蓄積容量１２に接続されるとともに、ｎＭＯＳトランジスタとｐＭＯＳトランジスタから構成される複合ダイオード１８を介して電荷蓄積容量１９に接続される。電荷蓄積容量１２，１９の他端は接地電位に接続される。複合ダイオード１１と電荷蓄積容量１２の接続部にはスイッチ１４を介して出力端子１５−１が接続され、また複合ダイオード１８と電荷蓄積容量１８の接続部には出力端子１５−２が接続される。複合ダイオード１１と電荷蓄積容量１２の接続部および複合ダイオード１８と電荷蓄積容量１９の接続部には、電荷蓄積容量１２，１９の電圧差を検知してスイッチ１４のオンオフを制御する電圧検知回路１６が接続される。出力端子１５−１，１５−２には、以上の蓄電回路から供給される電力により駆動される負荷回路１７が接続される。 (Third embodiment)
FIG. 5 shows a third embodiment of the power storage circuit of the present invention.
In the figure, the output of the alternating current generator 10 is connected to a charge storage capacitor 12 through a composite diode 11 composed of an nMOS transistor and a pMOS transistor, and a composite diode 18 composed of an nMOS transistor and a pMOS transistor. To the charge storage capacitor 19. The other ends of the charge storage capacitors 12 and 19 are connected to the ground potential. An output terminal 15-1 is connected to a connection portion between the composite diode 11 and the charge storage capacitor 12 via a switch 14, and an output terminal 15-2 is connected to a connection portion between the composite diode 18 and the charge storage capacitor 18. . A voltage detection circuit 16 that detects a voltage difference between the charge storage capacitors 12 and 19 and controls on / off of the switch 14 at a connection portion between the composite diode 11 and the charge storage capacitor 12 and a connection portion between the composite diode 18 and the charge storage capacitor 19. Is connected. A load circuit 17 driven by electric power supplied from the above storage circuit is connected to the output terminals 15-1 and 15-2.

複合ダイオード１１は、第１の実施形態と同様に、交流電流発生器１０側からｐＭＯＳトランジスタ、ｎＭＯＳトランジスタの順に配置した構成である。複合ダイオード１８は、第２の実施形態と同様に、交流電流発生器１０側からｎＭＯＳトランジスタ、ｐＭＯＳトランジスタの順に配置した構成である。すなわち、複合ダイオード１１，１８は、交流電流発生器１０に対して互いに逆向きに接続され、交流電流発生器１０の出力電位の正、負に応じて、電荷蓄積容量１２に正の電荷および電荷蓄積容量１９に負の電荷がそれぞれ蓄積される。 As in the first embodiment, the composite diode 11 has a configuration in which a pMOS transistor and an nMOS transistor are arranged in this order from the alternating current generator 10 side. As in the second embodiment, the composite diode 18 has a configuration in which an nMOS transistor and a pMOS transistor are arranged in this order from the alternating current generator 10 side. That is, the composite diodes 11 and 18 are connected to the alternating current generator 10 in opposite directions, and positive charges and charges are charged in the charge storage capacitor 12 according to whether the output potential of the alternating current generator 10 is positive or negative. Negative charges are respectively stored in the storage capacitors 19.

電圧検知回路１６は、電荷蓄積容量１２，１９にそれぞれ蓄積された電圧の差を検知し、所要電圧に達するとスイッチ１４をオフからオンに制御し、電荷蓄積容量１２からスイッチ１４、出力端子１５−１、負荷回路１７、出力端子１５−２、電荷蓄積容量１８を接続して負荷回路１７に電力を供給する。電荷蓄積容量１２，１９の差電圧が低下すると、電圧検知回路１６が検知してスイッチ１４をオンからオフに制御し、再び交流電流発生器１０から複合ダイオード１１，１８を介してそれぞれ電荷蓄積容量１２，１９に徐々に電荷が蓄積される。このように、本実施形態の構成では、正、負の電荷の両方を蓄積できるので、蓄電効率を向上させることができる。 The voltage detection circuit 16 detects the difference between the voltages stored in the charge storage capacitors 12 and 19, and controls the switch 14 from OFF to ON when the required voltage is reached. The charge storage capacitor 12 switches to the switch 14 and the output terminal 15. -1, the load circuit 17, the output terminal 15-2, and the charge storage capacitor 18 are connected to supply power to the load circuit 17. When the voltage difference between the charge storage capacitors 12 and 19 decreases, the voltage detection circuit 16 detects it and controls the switch 14 from on to off, and again from the alternating current generator 10 via the composite diodes 11 and 18, respectively. Charges are gradually accumulated at 12 and 19. Thus, in the configuration of the present embodiment, both positive and negative charges can be accumulated, so that the power storage efficiency can be improved.

（第４の実施形態）
図６は、本発明の蓄電回路の第４の実施形態の第１の構成例を示す。
本構成例の特徴は、第３の実施形態に示す蓄電回路を複数（ここでは２個）備える構成において、電荷蓄積容量１２，１９、スイッチ１４、電圧検知回路１６を共通化するところにある。すなわち、電荷蓄積容量１２，１９、スイッチ１４、電圧検知回路１６に対して、複数の交流電流発生器１０−１，１０−２、複合ダイオード１１−１と１８−１、複合ダイオード１１−２と１８−２をそれぞれ並列に接続する構成である。 (Fourth embodiment)
FIG. 6 shows a first configuration example of the fourth embodiment of the power storage circuit of the present invention.
The feature of this configuration example is that the charge storage capacitors 12 and 19, the switch 14, and the voltage detection circuit 16 are shared in the configuration including a plurality (here, two) of storage circuits shown in the third embodiment. That is, with respect to the charge storage capacitors 12 and 19, the switch 14, and the voltage detection circuit 16, a plurality of alternating current generators 10-1 and 10-2, composite diodes 11-1 and 18-1, and composite diode 11-2 In this configuration, 18-2 are connected in parallel.

これにより、複数の交流電流発生器１０−１，１０−２からの電荷を同時に電荷蓄積容量１２，１９に蓄積できるので、短時間に蓄電することが可能になる。なお、複数の交流電流発生器１０−１，１０−２として、例えばそれぞれ異なる方向の振動に最適化した振動発電器を配置することにより、さらに蓄電効率を向上させることができる。 As a result, the charges from the plurality of AC current generators 10-1 and 10-2 can be simultaneously stored in the charge storage capacitors 12 and 19, so that it can be stored in a short time. In addition, as the plurality of alternating current generators 10-1 and 10-2, for example, by arranging vibration generators optimized for vibrations in different directions, the power storage efficiency can be further improved.

図７は、本発明の蓄電回路の第４の実施形態の第２の構成例を示す。
本構成例の特徴は、第４の実施形態の第１の構成例における複数の交流電流発生器１０−１，１０−２に代えて、１つの交流電流発生器１０から位相の異なる複数の交流電流を取り出し、複数組設けられた複合ダイオード１１−１と１８−１、複合ダイオード１１−２と１８−２の各組の接続部に接続するところにある。 FIG. 7 shows a second configuration example of the fourth embodiment of the power storage circuit of the present invention.
The feature of this configuration example is that instead of the plurality of alternating current generators 10-1 and 10-2 in the first configuration example of the fourth embodiment, a plurality of alternating currents having different phases from one alternating current generator 10. The current is taken out and connected to the connection portions of the composite diodes 11-1 and 18-1 and the composite diodes 11-2 and 18-2 provided in a plurality of sets.

本構成例は、図８に示すダイオードブリッジ回路のダイオードを複合ダイオード１１，１８に置き換えた構成に類似するが、交流電流発生器１０が例えば１〜数十ｎＡ程度の交流電流を発生するものであっても、複合ダイオード１１，１８の逆バイアス特性とスイッチ１４の制御によって電荷蓄積容量１２，１９に効率的に蓄電し、負荷回路１７に駆動電力を供給することができる。 This configuration example is similar to the configuration in which the diode of the diode bridge circuit shown in FIG. 8 is replaced with the composite diodes 11 and 18, but the AC current generator 10 generates an AC current of about 1 to several tens of nA, for example. Even in this case, the charge storage capacitors 12 and 19 can be efficiently stored by the reverse bias characteristics of the composite diodes 11 and 18 and the control of the switch 14, and the driving power can be supplied to the load circuit 17.

本発明の蓄電回路の第１の実施形態の第１の構成例を示す図。The figure which shows the 1st structural example of 1st Embodiment of the electrical storage circuit of this invention. 本発明の蓄電回路の第１の実施形態の第２の構成例を示す図。The figure which shows the 2nd structural example of 1st Embodiment of the electrical storage circuit of this invention. 本発明の蓄電回路の第２の実施形態の第１の構成例を示す図。The figure which shows the 1st structural example of 2nd Embodiment of the electrical storage circuit of this invention. 本発明の蓄電回路の第２の実施形態の第２の構成例を示す図。The figure which shows the 2nd structural example of 2nd Embodiment of the electrical storage circuit of this invention. 本発明の蓄電回路の第３の実施形態を示す図。The figure which shows 3rd Embodiment of the electrical storage circuit of this invention. 本発明の蓄電回路の第４の実施形態の第１の構成例を示す図。The figure which shows the 1st structural example of 4th Embodiment of the electrical storage circuit of this invention. 本発明の蓄電回路の第４の実施形態の第２の構成例を示す図。The figure which shows the 2nd structural example of 4th Embodiment of the electrical storage circuit of this invention. 非特許文献１に記載の電源回路の構成例を示す図。FIG. 6 is a diagram illustrating a configuration example of a power supply circuit described in Non-Patent Document 1.

Explanation of symbols

１０交流電流発生器
１１，１８複合ダイオード
１２，１９電荷蓄積容量
１３抵抗
１４スイッチ
１５出力端子
１６電圧検知回路
１７負荷回路 DESCRIPTION OF SYMBOLS 10 AC current generator 11, 18 Composite diode 12, 19 Charge storage capacity 13 Resistance 14 Switch 15 Output terminal 16 Voltage detection circuit 17 Load circuit

Claims

An alternating current generator for generating alternating current;
A rectifying circuit for rectifying an alternating current output from the alternating current generator;
A charge storage capacitor connected to the output terminal of the rectifier circuit for storing positive charges output from the alternating current generator;
Switch means connected to the charge storage capacitor and turned on when the storage voltage exceeds a required voltage and controlled to be turned off when the storage voltage is lower than the required voltage, and the charge storage capacitor is stored under the control of the switch means. A structure for accumulating charges output from the AC current generator until the voltage exceeds a required voltage, and supplying power by the charges accumulated in the charge storage capacity when the accumulated voltage of the charge storage capacity exceeds the required voltage In a storage circuit that is
The rectifier circuit directly connects the source terminal of the nMOS transistor and the source terminal of the pMOS transistor, directly connects the gate terminal of the nMOS transistor and the drain terminal of the pMOS transistor, directly connects the drain terminal of the nMOS transistor and the gate terminal of the pMOS transistor, A first composite diode having the drain terminal of the nMOS transistor and the drain terminal of the pMOS transistor as an input / output terminal is used, the drain terminal of the pMOS transistor is connected to the output terminal of the alternating current generator, and the drain of the nMOS transistor A storage circuit, wherein a terminal is connected to the charge storage capacitor to store positive charges.

The power storage circuit according to claim 1,
A second composite diode having the same configuration as the first composite diode;
The storage circuit, wherein the output terminal of the alternating current generator is connected to the drain terminal of the nMOS transistor of the second composite diode and the drain terminal of the pMOS transistor is connected to the ground potential.

An alternating current generator for generating alternating current;
A rectifying circuit for rectifying an alternating current output from the alternating current generator;
A charge storage capacitor that is connected to an output terminal of the rectifier circuit and stores negative charges output from the alternating current generator;
Switch means connected to the charge storage capacitor and turned on when the storage voltage exceeds a required voltage and controlled to be turned off when the storage voltage is lower than the required voltage, and the charge storage capacity is stored under the control of the switch means. A structure for accumulating charges output from the AC current generator until the voltage exceeds a required voltage, and supplying power by the charges accumulated in the charge storage capacity when the accumulated voltage of the charge storage capacity exceeds the required voltage In a storage circuit that is
The rectifier circuit directly connects the source terminal of the nMOS transistor and the source terminal of the pMOS transistor, directly connects the gate terminal of the nMOS transistor and the drain terminal of the pMOS transistor, directly connects the drain terminal of the nMOS transistor and the gate terminal of the pMOS transistor, A first composite diode having the drain terminal of the nMOS transistor and the drain terminal of the pMOS transistor as an input / output terminal is used, the drain terminal of the nMOS transistor is connected to the output terminal of the alternating current generator, and the drain of the pMOS transistor A storage circuit, wherein a terminal is connected to the charge storage capacitor to store negative charges.

In the electrical storage circuit according to claim 3,
A second composite diode having the same configuration as the first composite diode;
The storage circuit, wherein the output terminal of the alternating current generator is connected to the drain terminal of the pMOS transistor of the second composite diode and the drain terminal of the nMOS transistor is connected to the ground potential.

An alternating current generator for generating alternating current;
A rectifying circuit for rectifying an alternating current output from the alternating current generator;
First and second charge storage capacitors connected to the output terminal of the rectifier circuit and storing positive and negative charges output from the alternating current generator, respectively;
Switching means connected to the first and second charge storage capacitors and turned on when a difference between the storage voltages exceeds a required voltage and turned off when the difference is less than the required voltage, By the control, the charge output from the alternating current generator is accumulated until the difference between the accumulated voltages of the first and second charge storage capacitors exceeds a required voltage, and the accumulated voltage of the first and second charge storage capacitors is In the power storage circuit that is configured to supply power by the charge stored in the charge storage capacitor when the difference exceeds a required voltage,
The rectifier circuit directly connects the source terminal of the nMOS transistor and the source terminal of the pMOS transistor, directly connects the gate terminal of the nMOS transistor and the drain terminal of the pMOS transistor, directly connects the drain terminal of the nMOS transistor and the gate terminal of the pMOS transistor, The first and second composite diodes having the drain terminal of the nMOS transistor and the drain terminal of the pMOS transistor as input / output terminals are used, and the drain terminal of the pMOS transistor of the first composite diode is connected to the alternating current generator. Connected to the output terminal, the drain terminal of the nMOS transistor is connected to the first charge storage capacitor to store positive charge, and the drain terminal of the nMOS transistor of the second composite diode is connected to the output of the alternating current generator. Connect to the terminal Storage circuit, characterized in that by connecting the drain terminal of the pMOS transistor to said second charge storage capacitor is configured to accumulate a negative charge.

The power storage circuit according to claim 5,
A plurality of the AC current generator and the rectifier circuit,
A plurality of first composite diodes that constitute the plurality of rectifier circuits are connected in parallel to the first charge storage capacitor, and a plurality of second diodes that constitute the plurality of rectifier circuits are connected to the second charge storage capacitor. 2. A power storage circuit, wherein two composite diodes are connected in parallel.

The power storage circuit according to claim 6,
Instead of the plurality of AC current generators, a plurality of AC currents having different phases are taken out from one AC current generator and connected to the first and second charge storage capacitors through the rectifier circuit, respectively. A power storage circuit characterized by that.