JP2008061491A - Power supply circuit for driving semiconductor switching device - Google Patents

Power supply circuit for driving semiconductor switching device Download PDF

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JP2008061491A
JP2008061491A JP2007182300A JP2007182300A JP2008061491A JP 2008061491 A JP2008061491 A JP 2008061491A JP 2007182300 A JP2007182300 A JP 2007182300A JP 2007182300 A JP2007182300 A JP 2007182300A JP 2008061491 A JP2008061491 A JP 2008061491A
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circuit
power supply
switching element
driving
capacitor
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JP5034729B2 (en
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Makoto Tanitsu
誠 谷津
Toshihisa Shimizu
敏久 清水
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Fuji Electric Co Ltd
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Fuji Electric Systems Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a power source circuit for driving semiconductor switching device that solves the problem, wherein in a power supply circuit for driving a conventional self-contained gate, charging and discharging losses across snubber resistance becomes large, and conversion efficiency is degraded in high-frequency operation, and the apparatus becomes large in size, since a snubber RCD circuit is used in the charging and discharging operations, and further, since only a single power supply is set as the power supply for driving, and ICBT gate cannot be reverse-biased, resulting in a large turn-off loss. <P>SOLUTION: The voltage across a semiconductor switching device is supplied via series capacitors with the positive-side DC voltage between positive or negative DC voltages, having a DC midpoint obtained by rectifying a half-bridge diode rectifier, is supplied as the forward bias side power supply for on-driving the semiconductor switching device; while the negative-side DC voltage is supplied as a reverse bias side power supply, for off-driving the semiconductor switching device. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、半導体スイッチング素子をオンオフさせるための駆動回路の駆動用電源回路に関するもので、詳しくは自給式の駆動用電源回路における小形、低価格化のための回路構成技術に関する。   The present invention relates to a drive power supply circuit for a drive circuit for turning on and off a semiconductor switching element, and more particularly to a circuit configuration technique for reducing the size and cost of a self-powered drive power supply circuit.

図９に、従来の自給式駆動用電源回路を用いたＩＧＢＴ駆動回路を、図１０にゲート駆動回路の詳細を示す。図９の回路構成では、ＩＧＢＴ４の主端子（コレクタ、エミッタ）と並列にダイオード１０１、抵抗１０２およびスナバコンデンサ１０３からなるＲＣＤスナバ回路１００が並列に、このＲＣＤスナバ回路１００のスナバコンデンサ１０３と並列にコンデンサ１０４とコンデンサ１０５の直列回路が、各々接続されている。さらにコンデンサ１０５にはダイオード１０７が並列に接続され、コンデンサ１０４と１０５の直列接続点はダイオード１０６を介しゲート駆動回路３の電源用コンデンサ８に接続されている。図６にゲート駆動回路３０の詳細を示す。電源用コンデンサ８と並列にトランジスタ３０１とトランジスタ３０２からなるコンプリメンタリ回路が接続され、さらにこのコンプリメンタリ回路の出力は抵抗３０３を介してＩＧＢＴ４のゲートに接続される。このような構成において、トランジスタ３０１がオンすると、ＩＧＢＴ４のゲート容量が充電され、ＩＧＢＴはオン状態となる。トランジスタ３０２がオンすると、ＩＧＢＴのゲート容量は放電され、ＩＧＢＴはオフ状態となる。
図９の回路構成において、ＩＧＢＴ４がオン状態からオフになると、スナバコンデンサ１０３はダイオード１０１を介して充電され、これに伴い、コンデンサ１０４、１０５も充電される。この充電動作によりコンデンサ１０５の電圧が電源用コンデンサ８の電圧より高くなるとダイオード１０６が導通して、電源用コンデンサ８が充電されることになる。次にＩＧＢＴ４がオンすると、コンデンサ１０３、１０４、１０５に蓄えられていた電荷はスナバ抵抗１０２、ＩＧＢＴ４を介して放電される。図５の回路の詳細な動作については、特許文献１に開示されている。
特開８−５１７７０号公報 FIG. 9 shows an IGBT drive circuit using a conventional self-powered drive power supply circuit, and FIG. 10 shows details of the gate drive circuit. In the circuit configuration of FIG. 9, an RCD snubber circuit 100 including a diode 101, a resistor 102 and a snubber capacitor 103 is parallel to the main terminal (collector, emitter) of the IGBT 4, and parallel to the snubber capacitor 103 of the RCD snubber circuit 100. A series circuit of a capacitor 104 and a capacitor 105 is connected to each other. Further, a diode 107 is connected in parallel to the capacitor 105, and a series connection point between the capacitors 104 and 105 is connected to the power supply capacitor 8 of the gate drive circuit 3 via the diode 106. FIG. 6 shows details of the gate drive circuit 30. A complementary circuit composed of a transistor 301 and a transistor 302 is connected in parallel with the power supply capacitor 8, and the output of the complementary circuit is connected to the gate of the IGBT 4 through a resistor 303. In such a configuration, when the transistor 301 is turned on, the gate capacitance of the IGBT 4 is charged, and the IGBT is turned on. When the transistor 302 is turned on, the gate capacitance of the IGBT is discharged, and the IGBT is turned off.
In the circuit configuration of FIG. 9, when the IGBT 4 is turned off from the on state, the snubber capacitor 103 is charged via the diode 101, and accordingly, the capacitors 104 and 105 are also charged. When the voltage of the capacitor 105 becomes higher than the voltage of the power supply capacitor 8 by this charging operation, the diode 106 becomes conductive and the power supply capacitor 8 is charged. Next, when the IGBT 4 is turned on, the electric charge stored in the capacitors 103, 104, and 105 is discharged through the snubber resistor 102 and the IGBT 4. The detailed operation of the circuit of FIG. 5 is disclosed in Patent Document 1.
JP-A-8-51770

上述のように、図９に示した従来の自給型ゲート駆動用電源回路では、ＲＣＤスナバ回路１００を充放電動作で使用するため、スナバ抵抗１０２における充放電損失が大きくなり高周波動作では変換効率が低下すると同時に、装置が大型になる。さらに駆動用の電源として正極の単一電源しか作れないため、ＩＧＢＴのゲートに逆バイアスをかけることができずターンオフ損失が大きいという課題がある。   As described above, the conventional self-powered gate drive power supply circuit shown in FIG. 9 uses the RCD snubber circuit 100 in charge / discharge operation, so that the charge / discharge loss in the snubber resistor 102 increases, and the conversion efficiency is improved in high frequency operation. At the same time, the device becomes larger. Furthermore, since only a positive single power source can be made as a power source for driving, there is a problem in that a reverse bias cannot be applied to the gate of the IGBT and the turn-off loss is large.

上述の課題を解決するために、第1の発明においては半導体スイッチング素子の両端電圧を直列コンデンサを介し、ダイオード直列回路とコンデンサ直列回路とを並列接続して構成したハーフブリッジ形ダイオード整流器により整流して得られた直流中間点を持つ正負の直流電圧のうち、正側直流電圧を前記半導体スイッチング素子をオン駆動するための順バイアス側電源として供給し、負側直流電圧を前記半導体スイッチング素子をオフ駆動するための逆バイアス側電源として供給する。
第２の発明においては、前述の直列コンデンサと直列に、抵抗とダイオードの並列回路を接続する。
第３の発明においては、前述のハーフブリッジ形ダイオード整流器により整流して得られた直流中間点を持つ正負のいずれか一方又は両方の直流電圧と別の駆動用電源の電圧とをダイオードを介して並列接続する。
第４の発明においては、直流電源と、前記直流電源に並列に接続される直列接続された上下アーム対の半導体スイッチング素子と、これら上下アームをそれぞれ駆動する二つのスイッチング素子駆動回路を含むスイッチング回路において、前記上下アーム対の半導体スイッチング素子が交互にオンオフ動作することにより、前記上アーム側スイッチング素子駆動回路と、前記下アーム側スイッチング素子駆動回路との間に生じる電位差変動により充放電を繰り返すバイパスコンデンサを備え、前記バイパスコンデンサの充放電電流を前記上アーム側スイッチング素子駆動回路と前記下アーム側スイッチング素子駆動回路の各々の電源部に設けた整流回路で整流し、前記整流回路の出力を各々のスイッチング素子駆動回路用電源とする。
第５の発明においては、第４の発明におけるバイパスコンデンサと直列にリアクトルを接続する。
第６の発明においては、第４の発明における各々の電源部に設けた整流回路は、ダイオード直列回路とコンデンサ直列回路の並列回路で構成する。
第７の発明においては、第４の発明における各々の電源部に設けた整流回路は、ダイオード直列回路とコンデンサ直列回路をリアクトルを介して並列接続して構成する。
第８の発明においては、第４の発明から第７の発明において、前記直流電源から直流−直流変換回路を通して前記整流回路のコンデンサ直列回路を充電する。 In order to solve the above-described problem, in the first invention, the voltage across the semiconductor switching element is rectified by a half-bridge type diode rectifier configured by connecting a diode series circuit and a capacitor series circuit in parallel via a series capacitor. Among positive and negative DC voltages having a DC intermediate point obtained in this way, a positive DC voltage is supplied as a forward bias power source for turning on the semiconductor switching element, and a negative DC voltage is turned off the semiconductor switching element. It is supplied as a reverse bias side power source for driving.
In the second invention, a parallel circuit of a resistor and a diode is connected in series with the series capacitor described above.
In the third aspect of the invention, either one or both of positive and negative DC voltages having a DC intermediate point obtained by rectification by the above-described half-bridge diode rectifier and the voltage of another driving power source are connected via a diode. Connect in parallel.
According to a fourth aspect of the present invention, there is provided a switching circuit including a DC power supply, a semiconductor switching element of a pair of upper and lower arms connected in parallel to the DC power supply, and two switching element driving circuits for driving the upper and lower arms, respectively. In this case, the semiconductor switching elements of the upper and lower arm pairs are alternately turned on and off, thereby repeatedly charging and discharging due to potential difference fluctuations generated between the upper arm side switching element driving circuit and the lower arm side switching element driving circuit. A capacitor, and rectifies the charge / discharge current of the bypass capacitor by a rectifier circuit provided in each power supply section of the upper arm side switching element drive circuit and the lower arm side switching element drive circuit, and outputs the rectifier circuit respectively The power supply for the switching element driving circuit is used.
In the fifth invention, a reactor is connected in series with the bypass capacitor in the fourth invention.
In the sixth invention, the rectifier circuit provided in each power supply unit in the fourth invention is constituted by a parallel circuit of a diode series circuit and a capacitor series circuit.
In the seventh invention, the rectifier circuit provided in each power supply unit in the fourth invention is configured by connecting a diode series circuit and a capacitor series circuit in parallel via a reactor.
In an eighth invention, in the fourth to seventh inventions, the capacitor series circuit of the rectifier circuit is charged from the DC power source through a DC-DC converter circuit.

本発明では、スイッチング素子の主端子間を整流して正負の駆動用電源を得ているため、ゲート駆動用の順バイアス電源だけでなく逆バイアス電源も作ることができ、動作損失を低損失化できる。結果として、装置の高効率化だけでなく、低価格化、小形化及び逆バイアス電源利用による装置の高信頼性化が可能となる。   In the present invention, positive and negative driving power supplies are obtained by rectifying the main terminals of the switching elements, so that not only forward bias power supplies for gate driving but also reverse bias power supplies can be created, and operating loss is reduced. it can. As a result, not only high efficiency of the apparatus but also low cost, downsizing, and high reliability of the apparatus by using a reverse bias power source can be achieved.

本発明の第１の要点は、半導体スイッチング素子の両端電圧を直列コンデンサを介し、ダイオード直列回路とコンデンサ直列回路とを並列接続して構成したハーフブリッジ形ダイオード整流器により整流して得られた直流中間点を持つ正負の直流電圧のうち、正側直流電圧を前記半導体スイッチング素子をオン駆動するための駆動回路の順バイアス側電源として供給し、負側直流電圧を前記半導体スイッチング素子をオフ駆動するための駆動回路の逆バイアス側電源として供給することである。
また、本発明の第２の要点は、上下アーム対の半導体スイッチング素子が交互にオンオフ動作することにより、上アーム側スイッチング素子駆動回路と、下アーム側スイッチング素子駆動回路との間に生じる電位差変動により充放電を繰り返すバイパスコンデンサを備え、前記バイパスコンデンサの充放電電流を前記上アーム側スイッチング素子駆動回路と前記下アーム側スイッチング素子駆動回路の各々の電源部に設けた整流回路で整流して得られた直流中間点を持つ正負の直流電圧のうち、正側直流電圧を前記半導体スイッチング素子をオン駆動するための駆動回路の順バイアス側電源として供給し、負側直流電圧を前記半導体スイッチング素子をオフ駆動するための駆動回路の逆バイアス側電源として供給することである。 The first essential point of the present invention is a DC intermediate obtained by rectifying a voltage across a semiconductor switching element through a series capacitor and a half-bridge type diode rectifier configured by connecting a diode series circuit and a capacitor series circuit in parallel. Among positive and negative DC voltages having a point, a positive DC voltage is supplied as a forward bias side power source of a drive circuit for driving the semiconductor switching element on, and a negative DC voltage is driven off the semiconductor switching element Is supplied as a reverse bias side power source of the driving circuit.
In addition, the second essential point of the present invention is that the potential difference fluctuation generated between the upper arm side switching element driving circuit and the lower arm side switching element driving circuit by alternately turning on and off the semiconductor switching elements of the upper and lower arm pairs. A bypass capacitor that repeatedly charges and discharges, and the charge and discharge current of the bypass capacitor is obtained by rectifying by a rectifier circuit provided in each power supply section of the upper arm side switching element driving circuit and the lower arm side switching element driving circuit. Among positive and negative DC voltages having a DC intermediate point, a positive DC voltage is supplied as a forward bias side power source of a driving circuit for driving the semiconductor switching element on, and the negative DC voltage is supplied to the semiconductor switching element. The power supply is supplied as a reverse bias side power source of a drive circuit for driving off.

図１に、本発明の第1の実施例を示す回路構成図を示す。図１では、ＩＧＢＴ４を駆動するためのゲート駆動回路３の出力がＩＧＢＴ４のゲートとエミッタに接続されている。また電源用コンデンサ８、９とダイオード６、７によりハーフブリッジ形ダイオード整流回路２００が構成され、その電源用コンデンサ８、９は、各々ゲート駆動回路３の順バイアス用電源及び逆バイアス用電源となる。ハーフブリッジ形ダイオード整流回路２００のダイオード側交流入力点は直列にコンデンサ５を介してＩＧＢＴ４のコレクタに、電源用コンデンサ８、９の直列接続点は直接ＩＧＢＴ４のエミッタに、各々接続された構成である。
このような回路構成において、ＩＧＢＴ４がオン状態からオフすると、直流電源１→負荷２→コンデンサ５→ダイオード６→電源用コンデンサ８→直流電源１の経路で電流が流れ、コンデンサ５と同時に電源用コンデンサ８を充電する。次にＩＧＢＴ４がオンすると、コンデンサ５に充電されていたエネルギーにより、コンデンサ５→ＩＧＢＴ４→電源コンデンサ９→ダイオード７→コンデンサ５の経路で電流が流れ、電源コンデンサ９を充電する。
このＩＧＢＴ４のスイッチングによるオンオフの一連の動作により、ＩＧＢＴ４を駆動するための電源となる電源用コンデンサ８、９の充電が低損失で可能となる。
図４にゲート駆動回路３の詳細例を示す。電源用コンデンサ８と９の直列回路と並列にトランジスタ３０１とトランジスタ３０２からなるコンプリメンタリ回路が接続され、さらにこのコンプリメンタリ回路の出力は抵抗３０３を介してＩＧＢＴ４のゲートに、電源用コンデンサ８と９の直列接続点はＩＧＢＴのエミッタに、各々接続される。トランジスタ３０１がオンすると、電源用コンデンサ８でＩＧＢＴ４のゲート容量が充電され、ＩＧＢＴはオン状態となる。トランジスタ３０２がオンすると、電源用コンデンサ９でＩＧＢＴのゲート容量は放電後逆バイアスされ、ＩＧＢＴはオフ状態となる。 FIG. 1 is a circuit configuration diagram showing a first embodiment of the present invention. In FIG. 1, the output of the gate drive circuit 3 for driving the IGBT 4 is connected to the gate and emitter of the IGBT 4. The power supply capacitors 8 and 9 and the diodes 6 and 7 constitute a half-bridge type diode rectifier circuit 200. The power supply capacitors 8 and 9 serve as a forward bias power supply and a reverse bias power supply for the gate drive circuit 3, respectively. . The diode-side AC input point of the half-bridge type diode rectifier circuit 200 is connected in series to the collector of the IGBT 4 via the capacitor 5, and the series connection point of the power capacitors 8 and 9 is directly connected to the emitter of the IGBT 4. .
In such a circuit configuration, when the IGBT 4 is turned off from the ON state, a current flows through the path of the DC power source 1 → the load 2 → the capacitor 5 → the diode 6 → the power source capacitor 8 → the DC power source 1. 8 is charged. Next, when the IGBT 4 is turned on, due to the energy charged in the capacitor 5, a current flows through the path of the capacitor 5 → IGBT 4 → the power supply capacitor 9 → the diode 7 → the capacitor 5, and the power supply capacitor 9 is charged.
This series of on / off operations by switching of the IGBT 4 enables charging of the power supply capacitors 8 and 9 serving as a power source for driving the IGBT 4 with low loss.
FIG. 4 shows a detailed example of the gate drive circuit 3. A complementary circuit comprising a transistor 301 and a transistor 302 is connected in parallel with the series circuit of the power supply capacitors 8 and 9, and the output of this complementary circuit is connected to the gate of the IGBT 4 via the resistor 303 in series with the power supply capacitors 8 and 9. The connection point is connected to the emitter of the IGBT. When the transistor 301 is turned on, the gate capacitor of the IGBT 4 is charged by the power supply capacitor 8 and the IGBT is turned on. When the transistor 302 is turned on, the gate capacitance of the IGBT is reverse-biased after discharging by the power supply capacitor 9, and the IGBT is turned off.

図２に、本発明の第２の実施例を示す。図２は図１に示したＩＧＢＴ駆動用電源回路を、ブリッジ接続されたＩＧＢＴ式インバータ回路に適用した場合の構成図である。インバータ回路装置の起動前に、直流電源３００により、ダイオード４０１、４０２を介して、２つのゲート駆動回路３ａ、３ｂの順バイアス側電源用コンデンサ８ａ、８ｂを予め充電しておくことで、インバータ回路の起動が可能になる。起動後の動作は図１と同様であるため、詳細は省略する。   FIG. 2 shows a second embodiment of the present invention. FIG. 2 is a configuration diagram when the IGBT driving power supply circuit shown in FIG. 1 is applied to a bridge-connected IGBT inverter circuit. Before starting the inverter circuit device, the forward bias side power supply capacitors 8a and 8b of the two gate drive circuits 3a and 3b are charged in advance by the DC power supply 300 via the diodes 401 and 402, thereby the inverter circuit. Can be activated. Since the operation after activation is the same as that shown in FIG.

図３に、本発明の第３の実施例を示す。本発明による実施例図１の変形例である。図１との相違点は、コンデンサ５とハーフブリッジ形ダイオード整流回路２００との間にダイオード２０２と電流制限用抵抗２０１の並列回路が挿入されている点である。抵抗２０１により、ＩＧＢＴ４がオンした時のコンデンサ５の放電電流最大値を制限する。ＩＧＢＴ４の許容最大電流値が問題となる場合には有効な手段となる。   FIG. 3 shows a third embodiment of the present invention. Embodiment according to the present invention is a modification of FIG. The difference from FIG. 1 is that a parallel circuit of a diode 202 and a current limiting resistor 201 is inserted between the capacitor 5 and the half-bridge diode rectifier circuit 200. The resistor 201 limits the maximum discharge current value of the capacitor 5 when the IGBT 4 is turned on. This is an effective means when the allowable maximum current value of the IGBT 4 becomes a problem.

図５に、本発明の第４の実施例を示す。直列接続されたＩＧＢＴ４ａ、４ｂを駆動するためのゲート駆動回路３ａ、３ｂが各々ＩＧＢＴ４ａ、４ｂのゲート−エミッタに接続される。また電源用コンデンサ８ａ、９ａとダイオード６ａ、７ａによりハーフブリッジ形ダイオード整流回路２００ａが構成され、その電源用コンデンサ８ａ、９ａは、各々ゲート駆動回路３ａの順バイアス用電源及び逆バイアス用電源として接続される。同様に、電源用コンデンサ８ｂ、９ｂとダイオード６ｂ、７ｂによりハーフブリッジ形ダイオード整流回路２００ｂが構成され、その電源用コンデンサ８ｂ、９ｂは、各々ゲート駆動回路３ｂの順バイアス用電源及び逆バイアス用電源として接続される。
各々のハーフブリッジ形ダイオード整流回路２００ａ、２００ｂのダイオード側交流入力点はコンデンサ５ｃを介して直列接続され、電源用コンデンサ８ａ、９ａの中間接続点は直接ＩＧＢＴ４ａのエミッタに、また電源用コンデンサ８ｂ、９ｂの中間接続点は直接ＩＧＢＴ４ｂのエミッタに各々接続された構成である。
このような回路構成において、ＩＧＢＴ４ａがオフ状態からオンし、ＩＧＢＴ４ｂがオン状態からオフすると、直流電源１ｂ、１ａ→ＩＧＢＴ４ａ→電源用コンデンサ９ａ→ダイオード７ａ→コンデンサ５ｃ→ダイオード６ｂ→電源用コンデンサ８ｂ→直流電源１ｂ、１ａの経路で電流が流れ、コンデンサ５ｃと同時に電源用コンデンサ８ｂ、９ａを充電する。次にＩＧＢＴ４ａがオフし４ｂがオンすると、コンデンサ５ｃに充電されていたエネルギーにより、コンデンサ５ｃ→ダイオード６ａ→電源用コンデンサ８ａ→ＩＧＢＴ４ｂ→電源コンデンサ９ｂ→ダイオード７ｂ→コンデンサ５ｃの経路で電流が流れ、電源コンデンサ９ｂ、８ａを充電する。
このＩＧＢＴ４ａ、４ｂのスイッチングによるオンオフの一連の動作により、ＩＧＢＴ４ａ、４ｂを駆動するための電源となる電源用コンデンサ８ａ、８ｂ、９ａ、９ｂの充電が低損失で可能となる。 FIG. 5 shows a fourth embodiment of the present invention. Gate drive circuits 3a and 3b for driving IGBTs 4a and 4b connected in series are connected to gate-emitters of IGBTs 4a and 4b, respectively. The power supply capacitors 8a and 9a and the diodes 6a and 7a constitute a half-bridge type diode rectifier circuit 200a, and the power supply capacitors 8a and 9a are respectively connected as a forward bias power source and a reverse bias power source for the gate drive circuit 3a. Is done. Similarly, a half-bridge type diode rectifier circuit 200b is constituted by the power supply capacitors 8b and 9b and the diodes 6b and 7b. The power supply capacitors 8b and 9b are respectively a forward bias power supply and a reverse bias power supply for the gate drive circuit 3b. Connected as
The diode side AC input points of the half-bridge type diode rectifier circuits 200a and 200b are connected in series via the capacitor 5c, and the intermediate connection point of the power supply capacitors 8a and 9a is directly connected to the emitter of the IGBT 4a, and the power supply capacitor 8b, The intermediate connection point 9b is directly connected to the emitter of the IGBT 4b.
In such a circuit configuration, when the IGBT 4a is turned on from the off state and the IGBT 4b is turned off from the on state, the DC power source 1b, 1a → IGBT 4a → power capacitor 9a → diode 7a → capacitor 5c → diode 6b → power capacitor 8b → A current flows through the paths of the DC power supplies 1b and 1a, and the power supply capacitors 8b and 9a are charged simultaneously with the capacitor 5c. Next, when the IGBT 4a is turned off and the 4b is turned on, the current flows in the path of the capacitor 5c → the diode 6a → the power supply capacitor 8a → the IGBT 4b → the power supply capacitor 9b → the diode 7b → the capacitor 5c due to the energy charged in the capacitor 5c. The power supply capacitors 9b and 8a are charged.
By a series of on / off operations by switching of the IGBTs 4a and 4b, charging of the power supply capacitors 8a, 8b, 9a and 9b serving as a power source for driving the IGBTs 4a and 4b can be performed with low loss.

図６に、本発明の第５の実施例を示す。図５に示したハーフブリッジ形ダイオード整流回路２００ａ、２００ｂの各々のダイオード側交流入力点間を直列接続するコンデンサ５ｃと直列にリアクトル１１を挿入した構成である。このリアクトル１１を追加することで、ＩＧＢＴ４ａ、４ｂのスイッチングにより流れるコンデンサ５ｃの充放電電流のピーク値を小さくする事が出来るため、ダイオード６ａ、６ｂ、７ａ、７ｂ、及び電源用コンデンサ８ａ、８ｂ、９ａ、９ｂの電流定格を下げる効果があり、装置の一層の小形化が可能となる。   FIG. 6 shows a fifth embodiment of the present invention. This is a configuration in which a reactor 11 is inserted in series with a capacitor 5c that connects in series between the diode-side AC input points of the half-bridge type diode rectifier circuits 200a and 200b shown in FIG. By adding this reactor 11, the peak value of the charging / discharging current of the capacitor 5c that flows by switching of the IGBTs 4a and 4b can be reduced. This has the effect of lowering the current ratings of 9a and 9b, and enables further miniaturization of the device.

図７に、本発明の第６の実施例を示す。図６で挿入したリアクトル１１の代わりに、リアクトル１１ａ、１１ｂを各々ハーフブリッジ形ダイオード整流回路２００ａ、２００ｂの直流部分に挿入した構成である。
このような回路構成において、ＩＧＢＴ４ａがオフ状態からオンし、ＩＧＢＴ４ｂがオン状態からオフすると、直流電源１ｂ、１ａ→ＩＧＢＴ４ａ→電源用コンデンサ９ａ→ダイオード７ａ→コンデンサ５ｃ→ダイオード６ｂ→リアクトル１１ｂ→電源用コンデンサ８ｂ→直流電源１ｂ、１ａの経路で電流が流れ、コンデンサ５ｃと同時に電源用コンデンサ８ｂ、９ａを充電し、さらにリアクトル１１ｂにもエネルギーが蓄積される。コンデンサ５ｃの電圧が直流電源１ａ、１ｂの合計と同じになりその充電が完了したあとも、リアクトル１１ｂに蓄えられたエネルギーにより、リアクトル１１ｂ→電源コンデンサ８ｂ→電源コンデンサ９ｂ→ダイオード７ｂ→ダイオード６ｂ→リアクトル１１ｂの経路で電流が還流し、このリアクトル１１ｂのエネルギーにより電源コンデンサ８ｂ、９ｂのさらなる充電が可能になる。
次にＩＧＢＴ４ａがオフし４ｂがオンすると、コンデンサ５ｃに充電されていたエネルギーにより、コンデンサ５ｃ→ダイオード６ａ→リアクトル１１ａ→電源用コンデンサ８ａ→ＩＧＢＴ４ｂ→電源コンデンサ９ｂ→ダイオード７ｂ→コンデンサ５ｃの経路で電流が流れ、電源コンデンサ９ｂ、８ａを充電し、さらにリアクトル１１ａにエネルギーが蓄積される。コンデンサ５ｃの電圧がゼロとなりその放電が完了した後も、リアクトル１１ａに蓄積されたエネルギーは、リアクトル１１ａ→電源コンデンサ８ａ→電源コンデンサ９ａ→ダイオード７ａ→ダイオード６ａ→リアクトル１１ａの経路で還流し、このリアクトル１１ａのエネルギーで電源コンデンサ８ａ、９ａのさらなる充電が可能となる。このため、リアクトル１１ａ、１１ｂの追加により、図５の回路に対し、コンデンサ５ｃのピーク電流を下げるだけでなく、電源コンデンサ８ａ、８ｂ、９ａ、９ｂの充電効率を高める効果があり、一層の小形化が可能となる。 FIG. 7 shows a sixth embodiment of the present invention. Instead of the reactor 11 inserted in FIG. 6, the reactors 11 a and 11 b are inserted into the direct current portions of the half-bridge diode rectifier circuits 200 a and 200 b, respectively.
In such a circuit configuration, when the IGBT 4a is turned on from the off state and the IGBT 4b is turned off from the on state, the DC power source 1b, 1a → IGBT 4a → power capacitor 9a → diode 7a → capacitor 5c → diode 6b → reactor 11b → power source A current flows through the path from the capacitor 8b to the DC power supply 1b, 1a, charges the power supply capacitors 8b, 9a simultaneously with the capacitor 5c, and further stores energy in the reactor 11b. Even after the voltage of the capacitor 5c becomes the same as the sum of the DC power supplies 1a and 1b and the charging is completed, the reactor 11b → the power supply capacitor 8b → the power supply capacitor 9b → the diode 7b → the diode 6b → with the energy stored in the reactor 11b. The current flows back through the path of the reactor 11b, and the energy of the reactor 11b enables further charging of the power supply capacitors 8b and 9b.
Next, when the IGBT 4a is turned off and the 4b is turned on, the current in the path of the capacitor 5c → the diode 6a → the reactor 11a → the power supply capacitor 8a → the IGBT 4b → the power supply capacitor 9b → the diode 7b → the capacitor 5c due to the energy charged in the capacitor 5c. Flows, charging the power supply capacitors 9b and 8a, and further storing energy in the reactor 11a. Even after the voltage of the capacitor 5c becomes zero and the discharge is completed, the energy accumulated in the reactor 11a is circulated through the path of the reactor 11a → the power supply capacitor 8a → the power supply capacitor 9a → the diode 7a → the diode 6a → the reactor 11a. The power supply capacitors 8a and 9a can be further charged with the energy of the reactor 11a. Therefore, the addition of the reactors 11a and 11b has the effect of not only reducing the peak current of the capacitor 5c but also increasing the charging efficiency of the power supply capacitors 8a, 8b, 9a, and 9b with respect to the circuit of FIG. Can be realized.

図８に、本発明の第７の実施例を示す。図８の回路は図５の回路に対し、動作開始前の初期充電を行うため、直流−直流変換回路の一つであるシリーズレギュレータ回路１９を追加し、ダイオード１２で整流回路２００ａの電源コンデンサ８ａを、ダイオード１３で整流回路２００ｂの電源コンデンサ８ｂを充電するようにした構成である。ＩＧＢＴ４ａ、４ｂの起動前にシリーズレギュレータ回路１９より、直流電源１ａ、１ｂの電圧を使い、２つのゲート駆動回路３ａ、３ｂの順バイアス側電源用コンデンサ８ａ、８ｂを予め充電しておくことで、ＩＧＢＴ４ａ、４ｂの起動が可能になる。起動後の電源は図５〜図７の説明の通り、コンデンサ５ｃの充放電により自給している。この結果、シリーズレギュレータ回路１９は初期充電用途だけであり、極小さい容量の回路が適用可能である。   FIG. 8 shows a seventh embodiment of the present invention. The circuit of FIG. 8 adds a series regulator circuit 19 which is one of DC-DC conversion circuits to perform initial charging before the operation starts with respect to the circuit of FIG. 5, and the power supply capacitor 8 a of the rectifier circuit 200 a with the diode 12. Is configured such that the power supply capacitor 8b of the rectifier circuit 200b is charged by the diode 13. Before starting the IGBTs 4a, 4b, the series regulator circuit 19 uses the voltages of the DC power supplies 1a, 1b to precharge the forward bias side power supply capacitors 8a, 8b of the two gate drive circuits 3a, 3b. The IGBTs 4a and 4b can be activated. The power supply after startup is self-supplied by charging and discharging the capacitor 5c as described in FIGS. As a result, the series regulator circuit 19 is only used for initial charging, and a circuit with a very small capacity is applicable.

本発明は、ゲート駆動回路の駆動用電源をスイッチング素子の主端子から得る回路方式であり、インバータ、ＵＰＳ、スイッチング電源など、スイッチング動作で電力変換を行う装置のほとんどに適用が可能である。   The present invention is a circuit system that obtains a driving power source for a gate driving circuit from a main terminal of a switching element, and can be applied to almost all devices that perform power conversion by a switching operation, such as an inverter, a UPS, and a switching power source.

本発明の第1の実施例を示す回路図である。1 is a circuit diagram showing a first embodiment of the present invention. 本発明の第2の実施例を示す回路図である。FIG. 6 is a circuit diagram showing a second embodiment of the present invention. 本発明の第3の実施例を示す回路図である。FIG. 4 is a circuit diagram showing a third embodiment of the present invention. 図１〜図３のゲート駆動回路の構成例を示す。An example of the configuration of the gate drive circuit of FIGS. 本発明の第４の実施例を示す回路図である。It is a circuit diagram which shows the 4th Example of this invention. 本発明の第５の実施例を示す回路図である。It is a circuit diagram which shows the 5th Example of this invention. 本発明の第６の実施例を示す回路図である。It is a circuit diagram which shows the 6th Example of this invention. 本発明の第７の実施例を示す回路図である。It is a circuit diagram which shows the 7th Example of this invention. 従来のゲート駆動電源回路例を示す。An example of a conventional gate drive power supply circuit is shown. 図５のゲート駆動回路の詳細を示す。6 shows details of the gate drive circuit of FIG.

符号の説明Explanation of symbols

１、１ａ、１ｂ・・・直流電源 ２・・・負荷
３、３ａ、３ｂ、３０・・・ゲート駆動回路 ４、４ａ、４ｂ・・・ＩＧＢＴ
５、５ａ、５ｂ、５ｃ、１０４、１０５・・・コンデンサ
１０３・・・スナバコンデンサ
６、７、６ａ、７ａ、６ｂ、７ｂ、１０１、１０６、１０７、２０２、４０１、４０２・・・ダイオード 直流電源・・・３００
８、９、８ａ、９ａ、８ｂ、９ｂ・・・電源用コンデンサ
１１、１１ａ、１１ｂ・・・リアクトル
１０２、２０１、３０３・・・抵抗
２００、２００ａ、２００ｂ・・・ハーフブリッジ形ダイオード整流回路
３０１、３０２・・・トランジスタ



DESCRIPTION OF SYMBOLS 1, 1a, 1b ... DC power supply 2 ... Load 3, 3a, 3b, 30 ... Gate drive circuit 4, 4a, 4b ... IGBT
5, 5a, 5b, 5c, 104, 105 ... capacitor 103 ... snubber capacitor 6, 7, 6a, 7a, 6b, 7b, 101, 106, 107, 202, 401, 402 ... diode DC power supply ... 300
8, 9, 8a, 9a, 8b, 9b... Power capacitors 11, 11a, 11b... Reactors 102, 201, 303... Resistors 200, 200a, 200b... Half-bridge diode rectifier circuit 301 , 302... Transistor



Claims (8)

半導体スイッチング素子の両端電圧を直列コンデンサを介し、ダイオード直列回路とコンデンサ直列回路とを並列接続して構成したハーフブリッジ形ダイオード整流器により整流して得られた直流中間点を持つ正負の直流電圧のうち、正側直流電圧を前記半導体スイッチング素子をオン駆動するための順バイアス側電源として供給し、負側直流電圧を前記半導体スイッチング素子をオフ駆動するための逆バイアス側電源として供給することを特徴とする半導体スイッチング素子駆動用電源回路。   Among positive and negative DC voltages with a DC midpoint obtained by rectifying the voltage across the semiconductor switching element via a series capacitor and rectifying by a half-bridge type diode rectifier configured by connecting a diode series circuit and a capacitor series circuit in parallel Supplying a positive side DC voltage as a forward bias side power source for driving the semiconductor switching element on, and a negative side DC voltage being supplied as a reverse bias side power source for driving the semiconductor switching element off. A power supply circuit for driving a semiconductor switching element. 前述の直列コンデンサと直列に、抵抗とダイオードの並列回路を接続することを特徴とする請求項１に記載の半導体スイッチング素子駆動用電源回路。   2. The semiconductor switching element driving power supply circuit according to claim 1, wherein a parallel circuit of a resistor and a diode is connected in series with the series capacitor. 前述のハーフブリッジ形ダイオード整流器により整流して得られた直流中間点を持つ正負いずれか一方又は両方の直流電圧と別の駆動用電源の電圧とをダイオードを介して並列接続することを特徴とする請求項１及び２に記載の半導体スイッチング素子駆動用電源回路。   One or both of positive and negative DC voltages having a DC intermediate point obtained by rectification by the half-bridge diode rectifier described above and a voltage of another driving power supply are connected in parallel via a diode. The power supply circuit for driving a semiconductor switching element according to claim 1 or 2. 直流電源と、前記直流電源に並列に接続される直列接続された上下アーム対の半導体スイッチング素子と、これら上下アームをそれぞれ駆動する二つのスイッチング素子駆動回路を含むスイッチング回路において、前記上下アーム対の半導体スイッチング素子が交互にオンオフ動作することにより、前記上アーム側スイッチング素子駆動回路と、前記下アーム側スイッチング素子駆動回路との間に生じる電位差変動により充放電を繰り返すバイパスコンデンサを備え、前記バイパスコンデンサの充放電電流を前記上アーム側スイッチング素子駆動回路と前記下アーム側スイッチング素子駆動回路の各々の電源部に設けた整流回路で整流し、前記整流回路の出力を各々のスイッチング素子駆動回路用電源とすることを特徴とする半導体スイッチング素子駆動用電源回路。   In a switching circuit including a DC power supply, a semiconductor switching element of a pair of upper and lower arms connected in parallel to the DC power supply, and two switching element driving circuits for driving the upper and lower arms, respectively, A bypass capacitor that repeats charging and discharging due to potential difference fluctuations generated between the upper arm side switching element driving circuit and the lower arm side switching element driving circuit by alternately turning on and off the semiconductor switching element; Is rectified by a rectifier circuit provided in each power supply section of the upper arm side switching element drive circuit and the lower arm side switching element drive circuit, and the output of the rectifier circuit is a power supply for each switching element drive circuit A semiconductor switch characterized by Grayed element driving power source circuit. 前記バイパスコンデンサと直列にリアクトルを接続することを特徴とする請求項４に記載の半導体スイッチング素子駆動用電源回路。   5. The semiconductor switching element driving power supply circuit according to claim 4, wherein a reactor is connected in series with the bypass capacitor. 前記各々の電源部に設けた整流回路は、ダイオード直列回路とコンデンサ直列回路の並列回路で構成することを特徴とする請求項４に記載の半導体スイッチング素子駆動用電源回路。   5. The semiconductor switching element driving power supply circuit according to claim 4, wherein the rectifier circuit provided in each of the power supply units is configured by a parallel circuit of a diode series circuit and a capacitor series circuit. 前記各々の電源部に設けた整流回路は、ダイオード直列回路とコンデンサ直列回路をリアクトルを介して並列接続して構成することを特徴とする請求項４に記載の半導体スイッチング素子駆動用電源回路。   5. The semiconductor switching element driving power supply circuit according to claim 4, wherein the rectifier circuit provided in each of the power supply units is configured by connecting a diode series circuit and a capacitor series circuit in parallel via a reactor. 前記直流電源から直流−直流変換回路を通して前記整流回路のコンデンサ直列回路を充電することを特徴とする請求項４〜７に記載の半導体スイッチング素子駆動用電源回路。

8. The power supply circuit for driving a semiconductor switching element according to claim 4, wherein a capacitor series circuit of the rectifier circuit is charged from the DC power supply through a DC-DC conversion circuit.

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CN107482972A (en) * 2016-06-06 2017-12-15 迪尔公司 System and method for the self-energizing inverter suitable for induction machine
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JP2011172342A (en) * 2010-02-17 2011-09-01 Fuji Electric Co Ltd Power unit of gate drive circuit
CN102457163A (en) * 2010-10-20 2012-05-16 三菱电机株式会社 Driving circuit and semiconductor device with the driving circuit
CN107482972A (en) * 2016-06-06 2017-12-15 迪尔公司 System and method for the self-energizing inverter suitable for induction machine
EP3258593A1 (en) * 2016-06-06 2017-12-20 Deere & Company System and method for an inverter for self-excitation of an induction machine
US10014807B2 (en) 2016-06-06 2018-07-03 Deere & Company System and method for an inverter for self-excitation of an induction machine
US10224849B2 (en) 2016-06-06 2019-03-05 Deere & Company System and method for an inverter for self-excitation of an induction machine
CN107482972B (en) * 2016-06-06 2022-06-07 迪尔公司 System and method for self-energizing inverter for induction machine

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