JP4514400B2 - Member joining method and joining member obtained by the method - Google Patents
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Description
【０００１】
【発明の属する技術分野】
本発明は複数の部材をＡｕ−Ｓｎ合金で接合する接合方法とその方法で得られた接合部材に関し、更に詳しくは、接合時に部材相互間で起こる遊動現象を防止するように管理されていて、とくに、半導体レーザモジュールの組み立て時に適用して有効な接合方法に関する。
【０００２】
【従来の技術】
例えば、半導体レーザモジュールの場合、ＬＤチップ、ＬＤチップのヒートシンク、サーミスタ、ホトダイオード、レンズなどの各部材が所定の位置関係で配列されている１枚のベース（ＬＤベース）を、金属製のパッケージの中に接合配置されたペルチェモジュールの上に接合して組み立てられている（例えば、特許文献１参照。）。
【０００３】
そして、上記したＬＤベースにおいて、ＬＤチップとそのヒートシンクとの間、更にはＬＤチップとヒートシンクを接合一体化して成る部材とＬＤベースとの間は、従来からＡｕ−Ｓｎ合金を用いて接合されている。
一方、パッケージとペルチェモジュールの間、またペルチェモジュールとＬＤベースの間は通常、はんだを用いて接合されている。
【０００４】
したがって、例えば、パッケージとペルチェモジュールとＬＤベースを相互に接合する場合には、融点が異なる２種類のはんだを用いて接合することが必要である。仮に接合すべき部材が４種類であれば、用いるはんだは３種類になる。
上記した３部材を相互に接合する場合、まず、パッケージとペルチェモジュールを例えばＰｂ−４０％Ｓｎ（融点１８３℃）を用いて接合し、ついで得られた接合部材におけるペルチェモジュールの上に、より融点が低い例えばＩｎ−Ｐｂ−Ａｇ（融点１４４℃）を用いてＬＤベースが接合されている。
【０００５】
【特許文献１】
特開平８−１２２５８５号公報（第１図）
【０００６】
【発明が解決しようとする課題】
ところで、ＬＤチップとヒートシンクの間の接合、更には得られた部材とＬＤベースの間の接合に際しては、通常、ある組成のＡｕ−Ｓｎ合金から成り、ある面積と厚みを有する箔をＬＤチップとヒートシンクの間に介装し、または、被接合部材のどちらか一方に、ある組織のＡｕ−Ｓｎ合金層をスパッタ法や蒸着法などで形成した部材を用いて被接合部材を重ね合わせ、当該Ａｕ−Ｓｎ合金の共晶点以上の温度に加熱したのち冷却し、更に、得られた部材とＬＤベースの間に別のＡｕ−Ｓｎ合金箔を介装し、または、被接合部材のどちらか一方に、ある組織のＡｕ−Ｓｎ合金層をスパッタ法や蒸着法などで形成した部材を用いて被接合部材を重ね合わせ、同様の熱処理と冷却が実施される。
【０００７】
しかしながら、後段の接合過程で、前段の接合によって形成されている接合部（冷却・固化したＡｕ−Ｓｎ合金層）が再溶融して、ＬＤチップがヒートシンクから遊動し、両者の位置関係がずれるという問題が発生する。
このような問題の発生は、ＬＤチップの駆動時に発生する熱量をヒートシンクで吸収することによりＬＤチップの駆動安定性を確保するという問題にとって不都合である。
【０００８】
一方、パッケージとペルチェモジュールとＬＤベースとのはんだ接合で組み立てられた部材の場合、その高温下での信頼性、例えば強度が確保されているか否かという問題は、組み立て時の最後に用いたはんだの融点で律せられることになる。前記した例でいえば、Ｉｎ−Ｐｂ−Ａｇ（融点１４４℃）の高温強度で大きく影響を受けることになる。
【０００９】
したがって、モジュールにおける高温信頼性を高めようとする場合には、上記したパッケージとペルチェモジュールとＬＤベースとの接合に際しては、Ｐｂはんだに代えてより融点の高い接合材を用いることが好適である。
このような接合材の１つとして、前記したＡｕ−Ｓｎ合金がある。この合金は、組成によっても異なるが、実使用されているものの融点は概ね、２７０〜３８０℃程度であり、高温強度も優れている。
【００１０】
しかしながら、３種類の部材をＡｕ−Ｓｎ合金で順次接合する場合には、ＬＤチップとヒートシンク、これら両者の接合部材とＬＤベースの接合に関して説明したような問題が発生することが考えられるので、現在までのところ、パッケージとペルチェモジュールとＬＤベースとの接合にＡｕ−Ｓｎ合金を用いる事例は知られていない。
【００１１】
本発明は、複数の部材を全てＡｕ−Ｓｎ合金で接合する際に危惧される上記した問題を解決した新規な接合方法とその方法で得られた接合部材の提供を目的とする。
【００１２】
【課題を解決するための手段】
上記した目的を達成するために、本発明においては、複数の部材をＡｕ−Ｓｎ合金で次々と接合する際に、前記Ａｕ−Ｓｎ合金と前記２個の部材のうち少なくとも一方の部材の表面に形成されたＡｕ層とで前記２個の部材を接合することにより、接合後の接合部におけるＡｕ−Ｓｎ合金の組成を、Ｓｎの質量分率が１３質量％以下である組成にする部材の接合方法であって、前記Ａｕ層の前記Ａｕ−Ｓｎ合金への熱拡散により、前記接合後の接合部におけるＡｕ−Ｓｎ合金の融点が、接合前の前記Ａｕ−Ｓｎ合金の融点よりも高くなる工程を順次反復することを特徴とする部材の接合方法が提供される。
【００１３】
具体的には、表面にＡｕ層が形成されている部材を、このＡｕ層側にてＡｕ−Ｓｎ合金を用いて他の部材と接合する。そして、その際に、前記Ａｕ層および前記Ａｕ−Ｓｎ合金に関しては、次式：
【００１４】
【数２】
【００１５】
（ただし、ｓ1，ｔ1，ρ1，ｆは、それぞれ、用いるＡｕ−Ｓｎ合金の面積、厚み、比重、Ｓｎの質量分率（％）を表し、ｓ2，ｔ2，ρ2は、それぞれ、Ａｕ層の面積、厚み、比重を表す）
を選択し、かつ接合温度を前記Ａｕ−Ｓｎ合金の共晶温度以上３８０℃以下に設定する部材の接合方法が提供される。
【００１６】
更に、本発明においては、少なくとも２個の部材が、Ｓｎの質量分率が１３％以下である組成のＡｕ−Ｓｎ合金で接合されていることを特徴とする接合部材が提供される。
【００１７】
【発明の実施の形態】
本発明の接合方法は、以下に説明する技術思想を基礎とする。
（１）一般に部材間をＡｕ−Ｓｎ合金で接合する場合、部材間の接合強度を適正化するために、少なくとも一方の部材の接合される側の表面にはＡｕ層が形成されている。
【００１８】
（２）加熱によるＡｕ−Ｓｎ合金の溶融時には、上記したＡｕ層のＡｕ成分はＡｕ−Ｓｎ合金に熱拡散するので、当該Ａｕ−Ｓｎ合金はＡｕリッチな組成に変化した状態で固化し、接合部を形成する。
（３）一方、接合に用いられる通常のＡｕ−Ｓｎ合金は、Ｓｎの質量分率（ｆ）が２０〜３０％の範囲内にある。そして、Ａｕ−Ｓｎ状態図によれば、Ａｕ−２０％Ｓｎ合金の融点は約２７８℃、Ａｕ−３０％Ｓｎ合金の融点は約３８０℃である。
【００１９】
また、Ａｕ−Ｓｎ状態図によれば、Ｓｎの質量分率（ｆ）が１３％以下になると、そのＡｕ−Ｓｎ合金は、融点が４８０℃と高温であるζ相が過半を占めた状態になる。
（４）したがって、例えばＳｎの質量分率（ｆ）が２０〜３０％のＡｕ−Ｓｎを用いて部材間を接合した場合、少なくとも一方の部材の表面Ａｕ層の熱拡散により、使用したＡｕ−Ｓｎ合金におけるＡｕ成分がリッチになる。逆にいえばＳｎ成分がプアーになる。そして固化後のＡｕ−Ｓｎ合金におけるＳｎの質量分率（ｆ）が１３％以下になれば、形成された接合部の過半はζ相で占められることになる。すなわち、形成された接合部の融点は、使用当初のＡｕ−Ｓｎ合金の融点（高くても約３８０℃）よりも高くなっている。
【００２０】
（５）したがって、得られた接合部材に、更に上記と同じＡｕ−Ｓｎ合金を用いて他の部材の接合を行っても、そのときの接合温度は高くても約３８０℃であるため、既に形成されている接合部の再溶融は起こらない。
（６）この操作を順次反復することにより、接合に用いるＡｕ−Ｓｎ合金は同じであっても、後述する点を管理すれば、前段の接合時に形成された接合部の再溶融を招くことなく、複数の部材を次々と接合することが可能になる。
【００２１】
そこで、具体的な管理事項を以下に説明する。
まず、図１で示したように、部材１Ａと部材１Ｂの間にＡｕ−Ｓｎ合金箔を介装して接合する場合を考える。ここで、部材１Ｂの表面には、Ａｕ層３が形成されているものとする。
Ａｕ−Ｓｎ合金箔２におけるＳｎの質量分率をｆ（％）、合金箔の面積をｓ1，厚みをｔ1，比重をρ1とする。また、Ａｕ層３の面積をｓ2，厚みをｔ2，比重をρ2とする。このとき、Ａｕ−Ｓｎ合金箔２におけるＳｎ量は、ｓ1・ｔ1・ρ1・ｆとなる。
【００２２】
接合後にあっては、合金箔２とＡｕ層は一体化して１個のＡｕ−Ｓｎ合金に転化して接合部になるが、そのときの接合部全体の質量は、
ｓ1・ｔ1・ρ1＋ｓ2・ｔ2・ρ2となる。
この接合部におけるＳｎ量は接合の前後では変わらず、その値はｓ1・ｔ1・ρ1・ｆのままである。
【００２３】
したがって、（１）式が成立していれば、接合部を形成するＡｕ−Ｓｎ合金は、そのＳｎの質量分率（ｆ）が１３％以下となっていて、そこではζ相が過半を占めた状態になっている。
実際の接合に際しては、部材１Ｂに形成されているＡｕ層３の厚みと面積、また使用するＡｕ−Ｓｎ合金箔２の種類、厚み、面積のそれぞれを、（１）式を満足するような値に選定する。
【００２４】
そして、Ａｕ−Ｓｎ合金箔２を介装した状態で両部材を重ね合わせ、加熱してＡｕ−Ｓｎ合金箔を溶融する。
そのときの温度は、用いたＡｕ−Ｓｎ合金箔におけるＡｕ−Ｓｎ合金の組成に対応した共晶温度以上に設定される。そして、一般に、接合に用いるＡｕ−Ｓｎ合金におけるＳｎの質量分率（ｆ）の最大値は３０％であり、そのときの共晶温度は約３８０℃であるため、結局、接合時の温度は共晶温度以上３８０℃以下に設定される。
【００２５】
Ａｕ−Ｓｎ合金箔を溶融したのち冷却して接合部が形成される。このときの接合部は、（１）式の条件選定がなされているので、Ｓｎの質量分率（ｆ）が１３％以下で、融点４８０℃のζ相が過半を占めた組成のＡｕ−Ｓｎ合金になっている。
このようにして得られた接合部材に、更にＡｕ−Ｓｎ合金で他の部材を接合する場合、そのときの接合温度は用いるＡｕ−Ｓｎ合金の共晶温度以上３８０℃以下であるため、ζ相が過半を占め、既に形成されている接合部の再溶融が起こることはない。
【００２６】
【実施例】
実施例１
Ｔｉ，Ｐｔ，Ａｕ，Ｐｔ，Ａｕ−Ｓｎ合金の薄層が順次積層されている表面１ａを有するＡｌＮから成るキャリア部材１Ａの最上層Ａｕ−Ｓｎ合金層は、面積（ｓ1）９×１０4μｍ2、厚み（ｔ1）２.５〜４.０μｍ、比重（ρ1）１.２、Ｓｎの質量分率（ｆ）３０％のＡｕ−Ｓｎ合金組成とした（図２）。
【００２７】
一方、ＬＤチップ部材１Ｂの表面１ｂにＴｉ，Ｐｔの薄層を順次積層したのち、そこに、面積（ｓ2）７.５×１０4μｍ2、厚み（ｔ2）５〜６μｍ、比重（ρ2）１９.３のＡｕ層をめっき形成した。
Ａｕ−Ｓｎ合金層とＡｕ層を重ね合わせたのち温度３６０℃に加熱して接合した。形成された接合部の合金組成は、Ａｕ−（７.５〜１１.７）％Ｓｎになっていた。
【００２８】
ついで、得られた接合部材のキャリア部材１Ａと銅タングステン合金から成るＬＤベースとの間に、組成がＡｕ−２０％Ｓｎである合金箔を介装し、温度３６０℃まで加熱して両者を接合した。
この加熱過程で、ＬＤチップ部材１Ｂとキャリア部材１Ａの接合部が再溶融することなく、したがって、ＬＤチップ部材１Ｂが遊動するという事態も起こらなかった。
【００２９】
実施例２
図３で示した半導体レーザモジュールを組み立てるに当たり、パッケージとペルチェモジュールの接合、ペルチェモジュールとＬＤベースの接合をいずれもＡｕ−Ｓｎ接合を用いて行った。
なお、ペルチェモジュールは、図４に例示したように、２枚の絶縁板と、これら絶縁板の間に介装された複数のペルチェ素子とからなる。
【００３０】
ここで、パッケージの表面はＮｉめっき層と厚み４μｍのＡｕ層が順次形成されており、ペルチェモジュールの表面は縦１０mm、幅８０mmの大きさで、上面と下面には、いずれも２μｍのＡｕ層が形成されている。また、ＬＤベースの表面は縦９mm、幅８mmの大きさで、上面と下面には、いずれも厚み２μｍのＡｕ層が形成されている。
【００３１】
パッケージとペルチェモジュールの間に、縦８mm、幅４.５mm、厚み０.０１mmのＡｕ−２０％Ｓｎ合金箔２Ａを介装し、温度３４０℃で接合処理を行った。接合部の組成は、Ａｕ−１１％Ｓｎ合金になった。
ついで、ペルチェモジュールとＬＤベースの間に、縦５mm、幅５mm、厚み０.０１mmのＡｕ−２０％Ｓｎ合金箔を介装し、再び温度３４０℃で接合処理を行った。接合部の組成は、Ａｕ−１２％Ｓｎ合金になった。
【００３２】
ＬＤベースの接合の過程で、既に接合されているペルチェモジュールとパッケージが互いに遊動するという現象は全く起こらなかった。
【００３３】
【発明の効果】
以上の説明で明らかなように、Ａｕ−Ｓｎ合金を用いる本発明の部材間の接合方法は、用いるＡｕ−Ｓｎ合金の組成と形状、接合対象の部材の表面におけるＡｕ層の形状に関する各要素を（１）式が成立するように選定することにより、接合後の接合部におけるＡｕ−Ｓｎ合金の組成を、そのＳｎの質量分率（ｆ）が１３％以下となるようにして高温のζ相を過半とする状態に管理する接合方法である。
【００３４】
そのため、得られた接合部材に更に他の部材をＡｕ−Ｓｎ合金で接合した場合であっても、既に形成されている接合部の再溶融は起こらず、部材間における遊動は起こらなくなる。
また、この接合方法で例えば半導体レーザモジュールを組み立てれば、Ａｕ−Ｓｎ合金の融点は最低でも約２８０℃程度であるため、組み立てられた半導体レーザモジュールはその高温信頼性が高いものになる。
【図面の簡単な説明】
【図１】本発明の接合方法の条件式（１）を説明するための模式図である。
【図２】実施例１の接合方法を説明するための模式図である。
【図３】実施例２の接合方法を説明するための模式図である。
【図４】ペルチェモジュールの模式図である。
【符号の説明】
１Ａ，１Ｂ 接合対象の部材
１ａ 部材１Ａの表面層
１ｂ 部材１Ｂの表面層
２，２Ａ，２Ｂ Ａｕ−Ｓｎ合金（箔）
３ Ａｕ層[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a joining method for joining a plurality of members with an Au-Sn alloy and a joining member obtained by the method. More specifically, the present invention is managed so as to prevent the floating phenomenon that occurs between members during joining. In particular, the present invention relates to a bonding method effective when applied in assembling a semiconductor laser module.
[0002]
[Prior art]
For example, in the case of a semiconductor laser module, an LD chip, a heat sink of the LD chip, a thermistor, a photodiode, a lens, and the like are arranged in a predetermined positional relationship with a single base (LD base) of a metal package. It is assembled by being joined onto a Peltier module joined inside (see, for example, Patent Document 1).
[0003]
In the above-described LD base, the LD base and the heat sink, and further, the member formed by joining and integrating the LD chip and the heat sink and the LD base are conventionally joined using an Au-Sn alloy. Yes.
On the other hand, between the package and the Peltier module, and between the Peltier module and the LD base are usually joined using solder.
[0004]
Therefore, for example, when a package, a Peltier module, and an LD base are bonded to each other, it is necessary to bond them using two types of solder having different melting points. If there are four types of members to be joined, three types of solder are used.
When bonding the above three members to each other, first, the package and the Peltier module are bonded using, for example, Pb-40% Sn (melting point 183 ° C.), and then the melting point is further increased on the Peltier module in the obtained bonding member. The LD base is bonded using, for example, In—Pb—Ag (melting point: 144 ° C.) having a low value.
[0005]
[Patent Document 1]
JP-A-8-122585 (FIG. 1)
[0006]
[Problems to be solved by the invention]
By the way, in joining between the LD chip and the heat sink, and further joining between the obtained member and the LD base, a foil made of an Au—Sn alloy having a certain composition and having a certain area and thickness is usually used as the LD chip. The member to be bonded is overlapped with a member formed by interposing between the heat sinks or a member in which an Au—Sn alloy layer of a certain structure is formed by sputtering or vapor deposition on one of the members to be bonded. -Heated to a temperature equal to or higher than the eutectic point of the Sn alloy and then cooled. Further, another Au-Sn alloy foil is interposed between the obtained member and the LD base, or either the member to be joined In addition, the members to be joined are overlapped using a member in which an Au—Sn alloy layer having a certain structure is formed by sputtering or vapor deposition, and the same heat treatment and cooling are performed.
[0007]
However, in the subsequent bonding process, the bonding portion (cooled and solidified Au—Sn alloy layer) formed by the previous bonding is remelted, and the LD chip is loosened from the heat sink, and the positional relationship between the two is shifted. A problem occurs.
The occurrence of such a problem is inconvenient for the problem of ensuring the driving stability of the LD chip by absorbing the amount of heat generated when the LD chip is driven by the heat sink.
[0008]
On the other hand, in the case of a member assembled by solder bonding of a package, a Peltier module, and an LD base, the problem of whether reliability at high temperatures, for example, strength is ensured, is the solder used at the end of assembly. It will be governed by the melting point. In the above example, it is greatly affected by the high temperature strength of In—Pb—Ag (melting point: 144 ° C.).
[0009]
Therefore, in order to increase the high temperature reliability of the module, it is preferable to use a bonding material having a higher melting point instead of Pb solder when bonding the package, the Peltier module, and the LD base.
One of such bonding materials is the Au—Sn alloy described above. Although this alloy differs depending on the composition, although it is actually used, the melting point is about 270 to 380 ° C., and the high temperature strength is also excellent.
[0010]
However, when three types of members are sequentially joined with an Au—Sn alloy, the problems described with respect to the joining of the LD chip and the heat sink, and the joining member of these both and the LD base may occur. Up to now, there is no known case where an Au—Sn alloy is used for joining the package, the Peltier module, and the LD base.
[0011]
An object of the present invention is to provide a novel joining method that solves the above-mentioned problems that are feared when joining a plurality of members with an Au-Sn alloy, and a joining member obtained by the method.
[0012]
[Means for Solving the Problems]
In order to achieve the above object, in the present invention, when joining a plurality of members one after another with an Au—Sn alloy, the surface of at least one member of the two members is the Au—Sn alloy. By joining the two members with the formed Au layer, joining the members so that the composition of the Au—Sn alloy in the joined part after joining is a composition in which the mass fraction of Sn is 13% by mass or less. A method in which the melting point of the Au—Sn alloy in the joined portion after joining is higher than the melting point of the Au—Sn alloy before joining due to thermal diffusion of the Au layer to the Au—Sn alloy. Are sequentially repeated. A method for joining members is provided.
[0013]
Specifically, a member having an Au layer formed on the surface is joined to another member using an Au—Sn alloy on the Au layer side. At that time, with respect to the Au layer and the Au-Sn alloy, the following formula:
[0014]
[Expression 2]
[0015]
(Where, s 1 , t 1 , ρ 1 , f represent the area, thickness, specific gravity, and Sn mass fraction (%) of the Au—Sn alloy used, respectively, s 2 , t 2 , ρ 2 are (Represents the area, thickness, and specific gravity of the Au layer)
And a joining method for members in which the joining temperature is set to be not less than the eutectic temperature of the Au—Sn alloy and not more than 380 ° C. is provided.
[0016]
Furthermore, in the present invention, there is provided a joining member characterized in that at least two members are joined with an Au—Sn alloy having a composition having a Sn mass fraction of 13% or less.
[0017]
DETAILED DESCRIPTION OF THE INVENTION
The joining method of the present invention is based on the technical idea described below.
(1) Generally, when members are joined with an Au—Sn alloy, an Au layer is formed on the surface of at least one member to be joined in order to optimize the joining strength between the members.
[0018]
(2) When the Au—Sn alloy is melted by heating, the Au component of the Au layer is thermally diffused into the Au—Sn alloy, so that the Au—Sn alloy is solidified in a state of changing to an Au-rich composition and bonded. Forming part.
(3) On the other hand, the normal Au—Sn alloy used for bonding has a Sn mass fraction (f) in the range of 20 to 30%. According to the Au—Sn phase diagram, the melting point of the Au-20% Sn alloy is about 278 ° C., and the melting point of the Au-30% Sn alloy is about 380 ° C.
[0019]
Further, according to the Au-Sn phase diagram, when the mass fraction (f) of Sn is 13% or less, the Au-Sn alloy is in a state where the ζ phase having a melting point of 480 ° C. is the majority. Become.
(4) Therefore, for example, when the members are joined using Au—Sn having a mass fraction (f) of Sn of 20 to 30%, the Au— used is obtained by thermal diffusion of the surface Au layer of at least one member. The Au component in the Sn alloy becomes rich. Conversely, the Sn component becomes poor. And if the mass fraction (f) of Sn in the Au-Sn alloy after solidification becomes 13% or less, the majority of the formed joint will be occupied by the ζ phase. In other words, the melting point of the formed joint is higher than the melting point of the Au—Sn alloy at the beginning of use (about 380 ° C. at the highest).
[0020]
(5) Therefore, even when another member is bonded to the obtained bonding member using the same Au—Sn alloy as described above, the bonding temperature at that time is at most about 380 ° C. Remelting of the formed joint does not occur.
(6) By repeating this operation in sequence, even if the Au—Sn alloy used for the bonding is the same, if the points described later are managed, it does not cause remelting of the bonded portion formed during the previous bonding. It becomes possible to join a plurality of members one after another.
[0021]
Therefore, specific management items will be described below.
First, as shown in FIG. 1, consider a case in which an Au—Sn alloy foil is interposed between the member 1 </ b> A and the member 1 </ b> B. Here, it is assumed that the Au layer 3 is formed on the surface of the member 1B.
The mass fraction of Sn in the Au—Sn alloy foil 2 is f (%), the area of the alloy foil is s 1 , the thickness is t 1 , and the specific gravity is ρ 1 . The area of the Au layer 3 is s 2 , the thickness is t 2 , and the specific gravity is ρ 2 . At this time, the Sn amount in the Au—Sn alloy foil 2 is s 1 · t 1 · ρ 1 · f.
[0022]
After the bonding, the alloy foil 2 and the Au layer are integrated into one Au—Sn alloy to form a bonded portion. The mass of the entire bonded portion at that time is
s 1 · t 1 · ρ 1 + s 2 · t 2 · ρ 2
The amount of Sn in this junction does not change before and after the junction, and the value remains s 1 · t 1 · ρ 1 · f.
[0023]
Therefore, if the formula (1) is satisfied, the Au-Sn alloy forming the joint has a Sn mass fraction (f) of 13% or less, in which the ζ phase accounts for the majority. It is in the state.
In actual joining, the thickness and area of the Au layer 3 formed on the member 1B, and the type, thickness and area of the Au—Sn alloy foil 2 to be used are values that satisfy the expression (1). Select
[0024]
Then, both members are superposed with the Au—Sn alloy foil 2 interposed, and heated to melt the Au—Sn alloy foil.
The temperature at that time is set to be equal to or higher than the eutectic temperature corresponding to the composition of the Au—Sn alloy in the used Au—Sn alloy foil. In general, the maximum value of the Sn mass fraction (f) in the Au—Sn alloy used for bonding is 30%, and the eutectic temperature at that time is about 380 ° C. Therefore, the temperature at the time of bonding is as follows. The eutectic temperature is set to 380 ° C. or lower.
[0025]
The Au—Sn alloy foil is melted and then cooled to form a joint. At this time, the condition of the formula (1) is selected for the joint, so that the mass fraction (f) of Sn is 13% or less, and the Au—Sn composition has a composition in which the ζ phase having a melting point of 480 ° C. accounts for the majority. It is an alloy.
When another member is further bonded to the bonding member thus obtained with an Au—Sn alloy, the bonding temperature at that time is not less than the eutectic temperature of the Au—Sn alloy used and not more than 380 ° C. Occupies the majority, and remelting of the joints already formed does not occur.
[0026]
【Example】
Example 1
The uppermost Au—Sn alloy layer of the carrier member 1A made of AlN having the surface 1a on which the thin layers of Ti, Pt, Au, Pt, and Au—Sn alloy are sequentially laminated has an area (s 1 ) of 9 × 10 4. An Au—Sn alloy composition having a thickness of μm 2 , a thickness (t 1 ) of 2.5 to 4.0 μm, a specific gravity (ρ 1 ) of 1.2, and a mass fraction of Sn (f) of 30% was obtained (FIG. 2).
[0027]
On the other hand, after sequentially laminating a thin layer of Ti and Pt on the surface 1b of the LD chip member 1B, an area (s 2 ) of 7.5 × 10 4 μm 2 , a thickness (t 2 ) of 5 to 6 μm, and a specific gravity ( ρ 2 ) A 19.3 Au layer was formed by plating.
After superposing the Au—Sn alloy layer and the Au layer, they were joined by heating to a temperature of 360 ° C. The alloy composition of the formed joint was Au- (7.5-11.7)% Sn.
[0028]
Next, an alloy foil having a composition of Au-20% Sn is interposed between the carrier member 1A of the obtained joining member and the LD base made of a copper tungsten alloy, and the two are joined by heating to a temperature of 360 ° C. did.
During this heating process, the joining portion of the LD chip member 1B and the carrier member 1A did not melt again, and therefore the LD chip member 1B did not float.
[0029]
Example 2
In assembling the semiconductor laser module shown in FIG. 3, the bonding between the package and the Peltier module and the bonding between the Peltier module and the LD base were both performed using Au—Sn bonding.
As illustrated in FIG. 4, the Peltier module includes two insulating plates and a plurality of Peltier elements interposed between these insulating plates.
[0030]
Here, a Ni plating layer and a 4 μm thick Au layer are sequentially formed on the surface of the package, the surface of the Peltier module is 10 mm long and 80 mm wide, and both the upper and lower surfaces are 2 μm Au layers. Is formed. The surface of the LD base is 9 mm long and 8 mm wide, and an Au layer having a thickness of 2 μm is formed on the upper and lower surfaces.
[0031]
An Au-20% Sn alloy foil 2A having a length of 8 mm, a width of 4.5 mm, and a thickness of 0.01 mm was interposed between the package and the Peltier module, and a bonding process was performed at a temperature of 340 ° C. The composition of the joint was Au-11% Sn alloy.
Next, an Au-20% Sn alloy foil having a length of 5 mm, a width of 5 mm, and a thickness of 0.01 mm was interposed between the Peltier module and the LD base, and the joining process was again performed at a temperature of 340 ° C. The composition of the joint was Au-12% Sn alloy.
[0032]
In the process of LD-based bonding, the phenomenon that the already bonded Peltier module and the package move with each other did not occur at all.
[0033]
【The invention's effect】
As apparent from the above description, the joining method between the members of the present invention using the Au—Sn alloy includes the elements relating to the composition and shape of the Au—Sn alloy to be used and the shape of the Au layer on the surface of the member to be joined. By selecting so that the formula (1) is satisfied, the composition of the Au—Sn alloy in the bonded portion after bonding is set so that the mass fraction (f) of Sn becomes 13% or less and the high-temperature ζ phase This is a joining method that manages to a state where the majority is in the range.
[0034]
Therefore, even when another member is bonded to the obtained bonding member with an Au—Sn alloy, remelting of the already formed bonding portion does not occur, and no loose movement between the members occurs.
Further, for example, when a semiconductor laser module is assembled by this joining method, the melting point of the Au—Sn alloy is at least about 280 ° C., so that the assembled semiconductor laser module has high reliability at high temperatures.
[Brief description of the drawings]
FIG. 1 is a schematic diagram for explaining conditional expression (1) of a bonding method of the present invention.
2 is a schematic view for explaining a joining method of Example 1. FIG.
3 is a schematic diagram for explaining a joining method of Example 2. FIG.
FIG. 4 is a schematic diagram of a Peltier module.
[Explanation of symbols]
1A, 1B Joined member 1a Surface layer 1b of member 1A Surface layer 2, 2A, 2B of member 1B Au—Sn alloy (foil)
3 Au layer
Claims (3)
前記Ａｕ層の前記Ａｕ−Ｓｎ合金への熱拡散により、前記接合後の接合部におけるＡｕ−Ｓｎ合金の融点が、接合前の前記Ａｕ−Ｓｎ合金の融点よりも高くなる工程を順次反復することを特徴とする部材の接合方法。When joining a plurality of members one after another with an Au—Sn alloy , the two members are joined with the Au—Sn alloy and an Au layer formed on the surface of at least one of the two members. By this, it is the joining method of the member which makes the composition of the Au-Sn alloy in the joined part after joining the composition whose mass fraction of Sn is 13 mass% or less,
Steps in which the melting point of the Au-Sn alloy in the bonded portion after the bonding becomes higher than the melting point of the Au-Sn alloy before the bonding due to thermal diffusion of the Au layer to the Au-Sn alloy are sequentially repeated. The joining method of the member characterized by this.
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| JP2002275923A JP4514400B2 (en) | 2001-09-27 | 2002-09-20 | Member joining method and joining member obtained by the method |
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| JP2001297115 | 2001-09-27 | ||
| JP2001-297115 | 2001-09-27 | ||
| JP2002275923A JP4514400B2 (en) | 2001-09-27 | 2002-09-20 | Member joining method and joining member obtained by the method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| DE602004010061T2 (en) * | 2004-03-09 | 2008-09-11 | Infineon Technologies Ag | High reliability, low cost and thermally enhanced semiconductor chip mounting technology with AuSn |
| EP1737029A4 (en) * | 2004-03-24 | 2011-03-30 | Tokuyama Corp | Substrate for device bonding and method for manufacturing same |
| WO2005101612A1 (en) * | 2004-04-12 | 2005-10-27 | Mitsubishi Denki Kabushiki Kaisha | Stator of dynamo-electric machine |
| JP2007053242A (en) | 2005-08-18 | 2007-03-01 | Fuji Xerox Co Ltd | Semiconductor laser device and manufacturing method thereof |
| JP5023633B2 (en) * | 2006-09-19 | 2012-09-12 | ヤマハ株式会社 | Optical communication apparatus and manufacturing method thereof |
| JP5426081B2 (en) * | 2007-06-20 | 2014-02-26 | スタンレー電気株式会社 | Substrate bonding method and semiconductor device |
| US20090020876A1 (en) * | 2007-07-20 | 2009-01-22 | Hertel Thomas A | High temperature packaging for semiconductor devices |
| JP5131438B2 (en) * | 2007-08-27 | 2013-01-30 | セイコーエプソン株式会社 | Method for manufacturing piezoelectric device |
| JP5554900B2 (en) * | 2008-04-24 | 2014-07-23 | パナソニック株式会社 | Chip mounting method |
| JP2009267068A (en) * | 2008-04-24 | 2009-11-12 | Panasonic Electric Works Co Ltd | Method for mounting chip |
| JP5152012B2 (en) * | 2009-01-27 | 2013-02-27 | 株式会社大真空 | Piezoelectric vibration device and method for manufacturing piezoelectric vibration device |
| JP5534155B2 (en) * | 2009-11-13 | 2014-06-25 | 日本電気株式会社 | Device and device manufacturing method |
| JP5281122B2 (en) * | 2011-06-16 | 2013-09-04 | 株式会社フジクラ | Joining method and manufacturing method |
| JP6067982B2 (en) * | 2012-03-19 | 2017-01-25 | スタンレー電気株式会社 | Manufacturing method of semiconductor device |
| JP5589112B2 (en) * | 2013-03-18 | 2014-09-10 | 株式会社フジクラ | Joining method |
| JP7117883B2 (en) * | 2018-04-05 | 2022-08-15 | 三菱電機株式会社 | Semiconductor module and manufacturing method thereof |
| JP7174242B2 (en) * | 2018-06-15 | 2022-11-17 | 日亜化学工業株式会社 | Semiconductor device manufacturing method |
| US10811581B2 (en) | 2018-06-15 | 2020-10-20 | Nichia Corporation | Method of manufacturing semiconductor device |
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