JP4505261B2 - Metal pattern forming method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a metallic pattern forming method capable of forming fine metallic patterns, without performing etching process and forming the metallic patterns having superior adhesiveness between a base material and a metal film and having a high thermal resistance, even when there is little irregularities of the base material interface. <P>SOLUTION: The metallic pattern forming method comprises the steps of forming a region where there is generated in the patterned state a graft polymer on the front surface of a base material, containing a polyimide having a polymerization beginning portion in a skeleton, wherein the graft polymer has a functional group that interacts with a non-electrolytic plating catalyst or a precursor thereof; of imparting the non-electrolytic plating catalyst or the precursor thereof to the region; and of forming a pattern-like metal film, by performing a non-electrolytic plating. <P>COPYRIGHT: (C)2006,JPO&amp;NCIPI

Description

  The present invention relates to a metal pattern forming method, and more particularly to a metal pattern forming method useful as a metal wiring board, a printed wiring board (FPC board, TAB tape, etc.), and a semiconductor package.

Currently, among the metal wirings, the fields where the wiring width is narrow and the demand for flowing high-frequency current is increasing are the FPC field and the TAB field.
An FPC (Flexible Printed Circuit) is a wiring board in which a metal pattern is formed on a flexible board. In a hard disk drive or an optical pickup, taking advantage of its high bending performance. It is used for head parts that repeatedly operate at high speed. In addition, since an electronic circuit can be incorporated in a narrow space by folding it, it is also used for a camera, a mobile phone, and the like.
The TAB tape is an abbreviation for Tape Automated Bonding Tape, and is a wiring board that allows thin mounting of IC / LSI using a heat-resistant film as a base substrate. As a mounting method, the lead formed on the wiring board and the semiconductor chip are directly joined together by heat pressure. The TAB tape is excellent in increasing the density of wiring, and is used as a driver substrate such as an LCD / PDP and an interposer (rewiring substrate) for CSP such as a memory or a DSP device.

As a method for forming the metal pattern formed in these, “subtractive method”, “semi-additive method”, and “full-additive method” are mainly known.
In the subtractive method, a metal layer formed on a substrate is provided with a photosensitive layer that is exposed to irradiation with actinic rays, and this photosensitive layer is imagewise exposed and developed to form a resist image. Is a method of forming a metal pattern by etching and finally removing the resist. In the metal substrate used in this method, in order to provide adhesion between the substrate and the metal layer, the substrate interface has been subjected to uneven treatment to develop adhesion by the anchor effect. As a result, the substrate interface portion of the resulting metal pattern becomes uneven, and there is a problem in that the high frequency characteristics deteriorate when used as an electrical wiring. Further, when forming the metal substrate, there is a problem that a complicated process of treating the substrate with a strong acid such as chromic acid is necessary in order to process the substrate.

  In order to solve this problem, a method has been proposed in which a radically polymerizable compound is grafted on the surface of the substrate to modify the surface, thereby minimizing the unevenness of the substrate and simplifying the substrate processing process. (For example, refer to Patent Document 1 and Non-Patent Document 1). However, even if the metal substrate manufactured by this method is patterned by the subtractive method, there are problems peculiar to the subtractive method. In order to form a metal pattern having a high thin line width by the subtractive method, a so-called over-etching method in which the line width after etching becomes narrower than the line width of the resist pattern is effective. However, if an attempt is made to directly form a fine metal pattern by an over-etching method, line bleeding, blurring, disconnection, etc. are likely to occur. From the viewpoint of forming a good fine metal pattern, a metal pattern of 30 μm or less is formed. Formation is difficult. In addition, the metal film existing in the area other than the pattern portion is removed by the etching process, and there is a lot of waste, and there is a problem in terms of environment and price, such as the cost of processing the metal waste liquid generated by the etching process.

  In order to solve the above problem, a metal pattern forming method called a semi-additive method has been proposed. In the semi-additive method, a base substrate layer such as Cr is thinly formed on a substrate by plating or the like, and a resist pattern is formed on the base metal layer. Subsequently, after forming a metal layer such as Cu on the base metal layer in a region other than the resist pattern by plating, a wiring pattern is formed by removing the resist pattern. Further, the metal pattern is formed in a region other than the resist pattern by etching the base metal layer using the wiring pattern as a mask. Since this technique is an etching-less technique, it is easy to form a fine line pattern of 30 μm or less, and since the metal is deposited only at a necessary portion by plating, it is effective in terms of environment and price. However, in this method, it is necessary to process the surface of the substrate in order to provide adhesion between the substrate and the metal pattern. As a result, the substrate interface portion of the resulting metal pattern becomes uneven and is used as electrical wiring. At this time, there is a problem that high-frequency characteristics are deteriorated.

  In addition, a metal pattern forming method called a full additive method has also been proposed. In the full additive method, a resist pattern is formed on a substrate, a metal is deposited on a region other than the resist pattern by plating, and then the resist pattern is removed. Since this method is also an etching-less method, it is easy to form a fine line pattern of 30 μm or less. However, this method has the same problems as the semi-additive method, and the fine line pattern can be formed, and unevenness at the substrate interface is observed. There has been a demand for a new metal pattern formation method that is less in etching waste liquid.

Furthermore, a substrate used for forming a wiring substrate or the like needs to have solder resistance, and usually has a heat resistance of about 250 ° C. Therefore, a polyimide substrate having excellent heat resistance is generally used. However, even when a polyimide substrate is used, the above-described problems in forming a metal pattern also exist, and a new metal pattern is also provided from the viewpoint of forming a metal pattern on a polyimide substrate having excellent heat resistance. A formation method is desired, but it has not yet been provided.
JP 58-196238 A “Advanced Materials”, 2000, No. 20, p. 1481-1494

The present invention has been made in view of the above-mentioned drawbacks of the prior art, and an object thereof is to achieve the following object.
That is, the object of the present invention is to form a fine metal pattern without performing an etching step, and to have excellent heat resistance with excellent adhesion between the substrate and the metal film even when there are few irregularities at the substrate interface. An object of the present invention is to provide a metal pattern forming method capable of forming a high metal pattern.

  As a result of intensive studies in view of the above problems, the present inventor has used a polyimide having a polymerization initiation site introduced into its skeleton as a base material. A graft polymer having a functional group capable of generating an active site (generating a radical) on the surface and directly binding to the surface of the substrate and interacting with the electroless plating catalyst or its precursor. It was found that the above object was achieved by forming a region formed in a pattern and performing electroless plating on the region, and the present invention was completed.

That is, in the metal pattern forming method of the present invention , energy is applied in a pattern to a substrate surface containing a polyimide derived from a precursor represented by the following general formula (I) having a polymerization initiation site in the skeleton. , starting from the active points were generated in the polymerization initiation site of the substrate surface, the region generated in a pattern a graft polymer having a functional group capable of interacting with an electroless plating catalyst or its precursor to the substrate surface Forming, and
Applying an electroless plating catalyst or a precursor thereof to the region;
Performing electroless plating to form a patterned metal film;
It is a metal pattern formation method characterized by having.

In a preferred embodiment of the pattern forming method of the present invention, energy is applied to the substrate surface containing a precursor-derived polyimide represented by the following general formula (I) having a polymerization initiation site in the skeleton, A structure in which an active site is generated at a polymerization initiation site on the surface of a substrate, and the active site is used as a starting point to interact with an electroless plating catalyst or its precursor by a polymerizable functional group and heat, acid, or radiation A compound having a functional group that changes to or a functional group that loses the interaction is polymerized to provide a polymer compound layer, and heat, acid, or width rays are applied to the polymer compound layer in a pattern. A step of forming a region interacting with the electroless plating catalyst or its precursor on the surface of the substrate in a pattern,
Applying an electroless plating catalyst or a precursor thereof to the region;
Performing electroless plating to form a patterned metal film;
It is a metal pattern formation method characterized by having.

In another preferred embodiment of the metal pattern forming method of the present invention, a polymerizable functional group is formed on the surface of a base material containing a precursor-derived polyimide represented by the following general formula (I) having a polymerization initiation site in the skeleton. By contacting a compound having a functional group that interacts with a group and an electroless plating catalyst or its precursor, and irradiating radiation in a pattern, active sites are generated in a pattern at the polymerization initiation site on the substrate surface Starting the active site as a starting point, generating a graft polymer on the surface of the substrate using graft polymerization, and forming a region interacting with the electroless plating catalyst or its precursor in a pattern;
Applying an electroless plating catalyst or a precursor thereof to the region;
Performing electroless plating to form a patterned metal film;
It is a metal pattern formation method characterized by having.

  In this invention, when the base material containing the said polyimide is a film-form or plate-shaped base material, a metal pattern can be formed on both surfaces of this base material. Thereby, when a metal pattern is applied to a circuit wiring or the like, it is possible to further increase the density.

In this invention, it can further have a drilling process. Furthermore, in this invention, it can have the process of performing an electroconductive process to the hole formed by this process after the said drilling process.
By performing the hole forming step, for example, when a metal pattern is formed only on one side of the base material, it can be a hole into which a lead such as an IC is inserted. In addition, for example, when metal patterns are formed on both surfaces of the base material, a conductive process is further performed after the drilling process, and the side walls of the holes formed in the drilling process are made conductive, thereby It becomes possible to connect by the metal pattern conductive material formed on both surfaces of the material.

According to the present invention, it is possible to form a fine metal pattern according to an arbitrary pattern without performing an etching step, and excellent adhesion between the substrate and the metal film even when there are few irregularities at the substrate interface. it is possible to provide the formed cormorants Rukin genus pattern forming method having high heat resistance metal pattern.

Hereinafter, the present invention will be described in detail.
In the metal pattern forming method of the present invention, the substrate surface containing a precursor-derived polyimide represented by the following general formula (I) having a polymerization initiation site in the skeleton is applied with energy in a pattern, starting from the active points were generated in the polymerization initiation site of the substrate surface, the region of the graft polymer having a functional group capable of interacting with an electroless plating catalyst or its precursor to the substrate surface is generated in a pattern (hereinafter, A step (hereinafter referred to as a “pattern formation step” as appropriate), a step of applying an electroless plating catalyst or a precursor thereof to the region, and an electroless plating. And a step of forming a patterned metal film.

  The material on which the metal pattern is formed by applying the present invention may be used alone as a circuit board or the like, or may be used as a multilayer wiring board or the like by laminating a plurality of materials, and its application range is wide. The present invention is particularly useful for forming various electric elements such as, for example, FPC boards (single side, double side, multilayer), TAB tape, and semiconductor packages that require fine wiring.

  Preferred embodiments of the pattern forming method of the present invention are the methods described in the following (1) and (2), but the present invention is not limited to these methods.

(1) Energy is imparted to a substrate surface containing a precursor-derived polyimide represented by the following general formula (I) having a polymerization initiation site in the skeleton, and active at the polymerization initiation site on the substrate surface Generating a point, starting from the active point, a polymerizable functional group and a functional group that changes by heat, acid, or radiation into a structure that interacts with the electroless plating catalyst or its precursor, or A compound having a functional group that loses the interaction is polymerized to provide a polymer compound layer, and heat, acid, or width rays are applied to the polymer compound layer in a pattern, so that the surface of the substrate is not affected. A step of forming a pattern (interactive region) that interacts with the electroplating catalyst or its precursor, a step of applying an electroless plating catalyst or its precursor to the region, and electroless plating. Form a patterned metal film And a metal pattern forming method. (Hereinafter referred to as “metal pattern forming method (1)”.)

(2) The substrate surface containing a precursor-derived polyimide represented by the following general formula (I) having a polymerization initiation site in the skeleton, and a polymerizable functional group and an electroless plating catalyst or a precursor thereof mutually By contacting a compound having a functional group that acts and irradiating radiation in a pattern, active sites are generated in a pattern at the polymerization initiation site on the surface of the substrate, and graft polymerization is started from the active point as a starting point. A step of forming a graft polymer on the surface of the base material and forming a region interacting with the electroless plating catalyst or a precursor thereof (interactive region) in a pattern;
Applying an electroless plating catalyst or a precursor thereof to the region;
Performing electroless plating to form a patterned metal film;
A metal pattern forming method characterized by comprising: (Hereinafter referred to as “metal pattern forming method (2)”.)

  In the metal pattern forming method of the present invention, electroless plating or a precursor thereof is selectively applied to a region where a graft polymer having a functional group that interacts with the electroless plating catalyst or a precursor thereof is directly chemically bonded in a pattern. Compared with the conventional metal pattern formation method by etching using a resist pattern for applying electroless plating, the metal pattern is formed by laminating metals such as copper, so a high resolution metal It is presumed that the pattern was easily obtained. In addition, there is an advantage that there is no etching waste liquid.

In the metal pattern produced by using the metal pattern forming method of the present invention, the substrate is surface-grafted (details will be described later). When an electroless plating catalyst or a precursor thereof is allowed to act on the surface graft layer and electroless plating is performed, the surface graft polymer chain is formed by polymerization from the substrate interface. Or it is easy to act with its precursor. In addition, due to its high mobility, the electroless plating solution easily penetrates into the film, and the electroless plating proceeds inside or on the surface graft layer. As a result, the substrate interface of the metal film portion is in a hybrid state with the polymer that is directly bonded to the substrate. Therefore, it is considered that the adhesiveness is expressed while minimizing the unevenness of the substrate interface. In addition, it is presumed that the graft polymer is directly introduced into the polyimide base material, and the metal is deposited there, thereby forming a metal pattern with high heat resistance.
Hereinafter, each element in the metal pattern formation method of this invention is demonstrated in detail.

<< Pattern formation process >>
In this step, a region (interactive region) is formed on the substrate, in which a polymer having a functional group that interacts with the electroless plating catalyst or its precursor is directly chemically bonded in a pattern.

  First, the base material containing a polyimide having a polymerization initiation site in the skeleton, which is essential in each aspect of the metal pattern forming method of the present invention, will be described in detail.

[Production of substrate containing polyimide having polymerization initiation site in skeleton]
The base material according to the present invention includes a base material containing a precursor-derived polyimide represented by the following general formula (I) having a polymerization initiation site in the skeleton (hereinafter sometimes simply referred to as “polyimide base material”). .)
Here, the polymerization initiation site means a site that can be activated by energy application by UV light or the like to generate an active site (radical species) in the structure. The mode for generating the active site includes a mode for generating the active site directly at the polymerization start site and a mode for causing the generation of the active site at the polymerization start site and its vicinity by extracting hydrogen near the polymerization start site. It is. The polyimide used as the substrate according to the present invention is a polyimide derived from a precursor represented by the following general formula (I) (hereinafter referred to as “specific polyimide” as appropriate ) containing a polymerization initiation site in its skeleton. In addition, by having such a site, a graft polymer described later can be easily generated on the surface of the substrate.

  In the present invention, the polymerization initiation site contained in the specific polyimide is most preferably contained in the main chain skeleton of the polyimide from the viewpoints of heat resistance and ease of production.

The base material containing the specific polyimide according to the present invention can be produced by performing the following <1> to <3> in this order.
<1> Production of polyimide precursor <2> Molding of polyimide precursor <3> Change to polyimide structure of polyimide precursor by heat treatment The above <1> to <3> will be described below.

<1> Preparation of polyimide precursor [Description of polyimide precursor compound]
As a polyimide precursor compound used for preparation of the specific polyimide in the present invention, a compound represented by the following general formula (I) is used.

In general formula (I), R ¹ represents a tetravalent organic group, R ² represents a divalent organic group, and n represents an integer of 1 or more. At least one of R ¹ and R ² is a group including a structure having a polymerization initiating ability. The structural portion having this polymerization initiating ability is a polymerization initiating site in the polyimide according to the present invention. Further, the structure having a polymerization initiating ability is preferably a structure having a photopolymerization initiating ability.

  The compound represented by the general formula (I) is obtained by reacting a tetracarboxylic dianhydride represented by the following general formula (II) with a diamine compound represented by the following general formula (III) in an organic solvent. Can be obtained. Moreover, you may add bivalent alcohol as another component.

The general formula (II), and the general formula (III), R ¹ and R ² are the same meanings as R ¹ and R ² in the general formula (I).

(Tetracarboxylic dianhydride represented by the general formula (II))
As tetracarboxylic dianhydride represented by the general formula (II), R ¹ is an aliphatic group having 2 to 27 carbon atoms, a cyclic aliphatic group having 4 to 10 carbon atoms, or a monocyclic aromatic group. A compound selected from a group, a condensed polycyclic aromatic group, or a group containing a structure having a polymerization initiating ability, or R ¹ is a non-condensed polycyclic aroma directly linked to an aromatic group A compound that is a non-condensed polycyclic aromatic group in which an aromatic group or an aromatic group is connected to each other by a crosslinking member is preferable. Among these, it is particularly preferable that R ¹ is a group including a structure having a polymerization initiating ability.
Moreover, the tetracarboxylic dianhydride represented by general formula (II) may be used individually by 1 type, and may use 2 or more types together.

R ¹ in the general formula (II) is selected from an aliphatic group having 2 to 27 carbon atoms, a cyclic aliphatic group having 4 to 10 carbon atoms, a monocyclic aromatic group, or a condensed polycyclic aromatic group. From the viewpoint of the heat resistance of polyimide, it is preferably a monocyclic aromatic group or a condensed polycyclic aromatic group.

When R ¹ is a group selected from an aliphatic group having 2 to 27 carbon atoms, a cyclic aliphatic group having 4 to 10 carbon atoms, a monocyclic aromatic group, or a condensed polycyclic aromatic group Specific examples of the tetracarboxylic dianhydride represented by the general formula (II) include, for example, pyromellitic acid anhydride, 2,3,6,7-tetracarboxynaphthalene anhydride, 1,4,5,8 -Tetracarboxynaphthalene anhydride, 1,2,5,6-tetracarboxynaphthalene anhydride, p-terphenyl-3,4,3 ", 4" -tetracarboxylic anhydride, m-terphenyl-3,4 , 3 ", 4" -tetracarboxylic anhydride, bicyclo (2,2,2) oct-7-ene-2,3,5,6-tetracarboxylic anhydride and the like.

When R ¹ represents a non-fused polycyclic aromatic group in which aromatic groups are directly linked, or a non-fused polycyclic aromatic group linked to each other via a bridging site, Specific examples of the represented tetracarboxylic dianhydride include, for example, ethylene tetracarboxylic dianhydride, cyclopentanecarboxylic dianhydride, pyromellitic dianhydride, 3,3 ′, 4,4′- Biphenyltetracarboxylic dianhydride, 2,2 ′, 3,3′-biphenyltetracarboxylic dianhydride, 2,2-bis (3,4, dicarboxyphenyl) propane dianhydride, 2,2- Bis (2,3-dicarboxyphenyl) propane dianhydride, bis (3,4-dicarboxyphenyl) ether dianhydride, bis (3,4-dicarboxyphenyl) sulfone dianhydride, 1,1-bis (2,3-dicarboxyphenyl Ethane dianhydride, bis (2,3-dicarboxyphenyl) methane dianhydride, bis (3,4-dicarboxyphenyl) methane dianhydride, 2,2-bis (3,4-dicarboxyphenyl)- 1,1,1,3,3,3-hexafluoropropane dianhydride, 2,2-bis (2,3-dicarboxyphenyl) -1,1,1,3,3,3-hexafluoropropane dianhydride Anhydride, 2,3,6,7-naphthalenetetracarboxylic dianhydride, 1,4,5,8-naphthalenetetracarboxylic dianhydride, 1,2,5,6-naphthalenetetracarboxylic dianhydride 1,2,3,4-benzenetetracarboxylic dianhydride, 3,4,9,10-perylenetetracarboxylic dianhydride, 2,3,6,7-anthracenetetracarboxylic dianhydride, , 2,7,8-Phenanthre Tetracarboxylic dianhydride, and the like.

The structure having a polymerization initiating ability that constitutes a group including a structure having a polymerization initiating ability represented by R ¹ includes (a) aromatic ketones, (b) onium salt compounds, and (c) organic peroxides. (D) a thio compound, (e) a hexaarylbiimidazole compound, (f) a ketoxime ester compound, (g) a borate compound, (h) an azinium compound, (i) an active ester compound, (j) a carbon halogen bond. And (k) pyridinium compounds.

When R ¹ is a group including a structure having a polymerization initiating ability, the carboxylic acid anhydride structure present in the general formula (II) and the carboxylic acid anhydride structure present in R ¹ are as follows. The embodiment may be bonded to any place in the structure having the polymerization initiating ability, or may be bonded via a linking group.

Among the structures having polymerization initiating ability, (a) aromatic ketones are particularly preferable from the viewpoint of heat resistance of polyimide.
Specific examples of (a) aromatic ketones are shown below, but the present invention is not limited to these.

(A) Aromatic ketones In the present invention, (a) aromatic ketones preferable as a structure having a polymerization initiating ability include “RADIATION CURING IN POLYMER SCIENCE AND TECHNOLOGY” P. Fouassier, J. et al. F. Examples include compounds having a benzophenone skeleton or a thioxanthone skeleton described in Rabek (1993), p77-117. For example, the following compounds are mentioned.

Among these, particularly preferred examples of (a) aromatic ketones are listed below.
The α-thiobenzophenone compound described in JP-B-47-6416 and the benzoin ether compound described in JP-B-47-3981 include, for example, the following compounds.

  Examples of the α-substituted benzoin compounds described in JP-B-47-22326 include the following compounds.

  Benzoin derivatives described in JP-B-47-23664, aroylphosphonic acid esters described in JP-A-57-30704, dialkoxybenzophenones described in JP-B-60-26483, for example, the following compounds It is done.

  Examples of the benzoin ethers described in JP-B-60-26403 and JP-A-62-81345 include the following compounds.

  Examples of α-aminobenzophenones described in JP-B-1-34242, US Pat. No. 4,318,791 and European Patent 0284561A1, such as the following compounds.

  P-di (dimethylaminobenzoyl) benzene described in JP-A-2-211452, for example, the following compounds may be mentioned.

  Examples of the thio-substituted aromatic ketone described in JP-A-61-194062 include the following compounds.

  The acyl phosphine sulfide described in JP-B-2-9597 includes, for example, the following compounds.

  Examples of the acylphosphine described in JP-B-2-9596 include the following compounds.

  Further, thioxanthones described in JP-B-63-61950, coumarins described in JP-B-59-42864, and the like can also be mentioned.

Specific examples of the tetracarboxylic dianhydride represented by the general formula (II), which is a particularly preferable embodiment, in which R ¹ is a polymerization initiating group are shown below, but are not limited thereto.

(Diamine compound represented by general formula (III))
As the diamine compound represented by the general formula (III), R ² is selected from an aromatic group, an aliphatic group, an aromatic group interconnected by a crosslinking member, a group including a structure having a polymerization initiating ability, and the like. Any of the diamine compounds can be used. Among these, it is particularly preferable that R ² is a diamine compound having a group including a structure having a polymerization initiating ability.
Moreover, the diamine compound represented by general formula (III) may be used individually by 1 type, and may use 2 or more types together.

  Specific examples of the diamine compound represented by the general formula (III) include m-phenylenediamine, p-phenylenediamine, benzidine, 4,4 ''-diaminoterphenyl, 4,4-diaminoquaterphenyl, 4,4′-diaminodiphenyl ether, 4,4′-diaminodiphenylmethane, diaminodiphenylsulfone, 2,2-bis (p-aminophenyl) propane, 2,2-bis (p-aminophenyl) hexafluoroproban, 1, 5-diaminonaphthalene, 2,6-diaminonaphthalene, 3,3′-dimethylbenzidine, 3,3′-dimethoxybenzidine, 3,3′-dimethyl-4,4′-diaminodiphenyl ether, 3,3′-dimethyl- 4,4'-diaminodiphenylmethane, 1,4-bis (p-aminophenoxy) benzene, 4, 4 Examples include '-bis (p-aminophenoxy) biphenyl, 2,2-bis {4- (p-aminophenoxy) phenyl} propane, 2,3,5,6-tetraamino-p-phenylenediamine and the like.

Constituting the group containing the structure having polymerization initiation ability represented by R ^2, as the structure having polymerization initiation ability, in the same manner as R ¹ in the general formula (II), (a) aromatic ketones, ( b) onium salt compound, (c) organic peroxide, (d) thio compound, (e) hexaarylbiimidazole compound, (f) ketoxime ester compound, (g) borate compound, (h) azinium compound, ( i) an active ester compound, (j) a compound having a carbon halogen bond, (k) a pyridium compound, and the like.

In the case where R ² is a group containing a structure having a polymerization initiating ability, two amino groups present in the general formula (III) and R ² may be bonded in the structure in which the amino group has the above-mentioned polymerization initiating ability. It may be bonded to any place of the above, or may be bonded via a linking group.

Among the structures having polymerization initiating ability, (a) aromatic ketones are particularly preferable from the viewpoint of heat resistance of polyimide.
Specific examples of (a) aromatic ketones include the same examples as the specific examples listed in the general formula (II), but the present invention is not limited thereto.

Specific examples of the diamine compound represented by the general formula (III), which is a particularly preferable embodiment, in which R ² is a group including a structure having a polymerization initiating ability are shown below, but are limited thereto. Not.

(Method for synthesizing compound represented by formula (I))
The synthesis of the compound represented by the general formula (I), which is a polyimide precursor compound, includes a tetracarboxylic dianhydride represented by the general formula (II), a diamine compound represented by the general formula (III), and If desired, it is synthesized using a dialcohol compound.
Specifically, for example, first, the diamine compound represented by the general formula (III) is dissolved in a solvent, and then the carboxylic dianhydride represented by the general formula (II) is added, and the raw material used Depending on the temperature, the reaction can be carried out under ice cooling or at room temperature or by selecting a reaction temperature of 40 to 80 ° C. and heating.

-Solvent-
The solvent used here may be appropriately selected in consideration of the solubility of all components, and among them, the following solvents are preferable.
For example, ethylene dichloride, cyclohexanone, cyclopentanone, 2-heptanone, methyl isobutyl ketone, γ-butyrolactone, methyl ethyl ketone, methanol, ethanol, dimethylimidazolidinone, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol dimethyl ether, 2 -Methoxyethyl acetate, ethylene glycol monoethyl ether acetate, propylene glycol monomethyl ether (PGME), propylene glycol monomethyl ether acetate (PGMEA), tetraethylene glycol dimethyl ether, triethylene glycol monobutyl ether, triethylene glycol monomethyl ether, isopropanol, ethylene carbonate Ethyl acetate, butyl acetate, methyl lactate, ethyl lactate, methyl methoxypropionate, ethyl ethoxypropionate, methyl pyruvate, ethyl pyruvate, propyl pyruvate, N, N-dimethylformamide, dimethylacetamide, dimethyl sulfoxide, N-methyl Examples include pyrrolidone, tetrahydrofuran, diisopropylbenzene, toluene, xylene, mesitylene, and the like. These solvents are used alone or in combination.

  Among these, particularly preferred solvents are propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether, 2-heptanone, cyclohexanone, γ-butyrolactone, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monoethyl ether acetate, propylene Glycol monomethyl ether, propylene glycol monoethyl ether, ethylene carbonate, butyl acetate, methyl lactate, ethyl lactate, methyl methoxypropionate, ethyl ethoxypropionate, N-methylpyrrolidone, N, N-dimethylformamide, tetrahydrofuran, methyl isobutyl ketone, Mention may be made of xylene, mesitylene and diisopropylbenzene.

  The weight average molecular weight of the polyimide precursor compound represented by the general formula (I) is usually about 1,000 to 10,000,000, preferably about 1,000 to 1,000,000. More preferably, it is about 2000 to 1000000.

In addition, in the polyimide precursor represented by the general formula (I), the content of the group including a structure having a polymerization initiating ability contained as R ¹ and / or R ² is graft polymerization performed on the surface of the substrate. From the viewpoint of reaction, 10 mol% to 90 mol% is preferable, and 20 mol% to 90 mol% is more preferable.

  Although the specific example of the compound represented with general formula (I) which is a polyimide precursor below is shown below, it is not limited to these.

<2> Molding of Polyimide Precursor Next to <1> above, molding of a polyimide precursor is performed. As the polyimide precursor to be used, only the compound represented by the general formula (I) obtained in the above <1> may be used, or a polyimide precursor having another structure (including a group having a polymerization initiating ability). May be used in combination.
When multiple types of polyimide precursors are used, the content ratio of the compound represented by the general formula (I) in all the polyimide precursors and other polyimide precursors is represented by the general formula (I). It is preferable that a compound is 50 mass% or more, and it is more preferable that it is 80 mass% or more.

  Although it does not specifically limit about the shape of a molded object, From a point of manufacture aptitude, it is preferable that it is a film form and plate shape.

(Molding method)
As a molding method, any method can be applied, biaxially stretched film molding, injection molding, extrusion molding, hollow molding, compression molding, reaction molding, FRP molding, thermoforming, roll sheet molding, calendar molding, laminate molding, rotational molding. Is applicable. Moreover, it can also apply | coat and dry to a glass substrate etc. and can shape | mold into a film form.

<3> Change of polyimide precursor to polyimide structure by heat treatment Heat treatment is performed on the molded body of the polyimide precursor formed by the above <2>. The heat treatment is performed by heating at 100 ° C. to 450 ° C. for 1 minute to 1 hour, whereby the compound (polyimide precursor) represented by the general formula (I) is represented by the following general formula (IV). The structure changes to polyimide represented by Thus, the base material containing the polyimide which has the superposition | polymerization start part which concerns on this invention in frame | skeleton is obtained.

In the general formula (IV), R ^1, R ^2, n are the same as R ^1, R ^2, n in formula (I), and preferred ranges are also the same.

[Pattern formation]
In this step, a graft polymer having a functional group that directly binds to the surface of the substrate and interacts with the electroless plating catalyst or its precursor is formed into a pattern on the surface of the polyimide substrate obtained as described above. The generated region (hereinafter referred to as “interactive region” as appropriate) is formed.
As described above, the preferred embodiments of the metal pattern forming method of the present invention are the embodiments of the metal pattern forming method (1) and the metal pattern forming method (2).
Below, the pattern formation (namely, formation of an interactive area | region) in the metal pattern formation method (1) and the metal pattern formation method (2) is demonstrated in detail.

<Pattern formation in metal pattern formation method (1)>
In the metal pattern formation method (1), energy is imparted to the substrate surface containing the precursor-derived polyimide represented by the general formula (I) having a polymerization initiation site in the skeleton according to the present invention , An active site is generated at a polymerization initiation site on the surface of the base material , and interacts with an electroless plating catalyst or a precursor thereof by a polymerizable functional group and heat, acid, or radiation from the active site. A compound having a functional group that changes to a structure or a functional group that loses the interaction is polymerized to provide a polymer compound layer (hereinafter, referred to as a “pattern forming layer” as appropriate) , and the polymer compound layer By applying heat, acid, or width radiation to the substrate in a pattern, a graft polymer is formed in a pattern that has a functional group that binds directly to the substrate surface and interacts with the electroless plating catalyst or its precursor. Territory To form a (interactive region).
That is, in this embodiment, the surface graft polymerization described later is used to change the functional group that changes to a structure that interacts with the electroless plating catalyst or its precursor by heat, acid, or radiation, or the interaction. A pattern forming layer is formed by generating a polymer compound having a functional group to be lost on the entire surface of the polyimide substrate, and then, heat, acid or width rays are applied to the pattern forming layer in a pattern. By changing the functional group of the polymer compound of the imparted portion to a structure that interacts with the electroless plating catalyst or its precursor, or by eliminating the interaction, the electroless plating catalyst or its This is a method of forming a region (interactive region) in which a graft polymer having a functional group that interacts with a precursor is formed in a pattern.
In the following, “functional groups that change to a structure that interacts with an electroless plating catalyst or a precursor thereof by heat, acid, or radiation, or a functional group that loses the interaction”, as appropriate, This is called a polarity conversion group.

(Surface graft polymerization)
The pattern forming layer according to the pattern forming method (1) is prepared using a means generally called surface graft polymerization. Graft polymerization is a method in which an active species is provided on a polymer compound chain, whereby another monomer that initiates polymerization is further polymerized to synthesize a graft (grafting) polymer. When the compound forms a solid surface, it is called surface graft polymerization. In this invention, the surface of the said polyimide base material turns into a solid surface here. As the surface graft polymerization method, it is preferable to apply a photografting method in which energy is imparted by light irradiation.

In addition, the pattern formation layer in a metal pattern formation method (1) can be formed in the desired location on a base material. For example, if a film-like or plate-like polyimide base material is applied, the pattern forming layer may be formed only on one side of the base material or on both sides.
In forming the pattern forming layer, for example, when a film-like or plate-like polyimide substrate is applied as an example, surface graft polymerization may be simultaneously performed on both surfaces of the substrate, First, after surface graft polymerization is performed on one surface, surface graft polymerization may be performed on the other surface. Thus, by providing a pattern formation layer at a desired location on the base material, a metal pattern according to this pattern formation layer is formed when a plating process such as electroless plating described later is performed. .

(Energy application in surface graft polymerization)
As an energy application method for generating an active site at a polymerization initiation site present on the surface of the polyimide base material, for example, heating or radiation irradiation such as exposure can be used. Specifically, for example, light irradiation by a UV lamp, visible light property, etc., heating with a hot plate or the like can be performed.
Examples of the light source include a mercury lamp, a metal halide lamp, a xenon lamp, a chemical lamp, and a carbon arc lamp. Moreover, g line | wire, i line | wire, Deep-UV light can also be used.
The time required for energy application varies depending on the amount of the target graft polymer produced and the light source, but is usually between 10 seconds and 5 hours.

[(A) Functional group whose hydrophilicity / hydrophobicity is changed by heat or acid]
First, (A) the functional group whose hydrophilicity / hydrophobicity is changed by heat or acid will be described.
(A) There are two types of polar conversion groups whose hydrophilicity / hydrophobicity is changed by heat or acid: a functional group that changes from hydrophobic to hydrophilic and a functional group that changes from hydrophilic to hydrophobic.

((A-1) Functional group that changes from hydrophobic to hydrophilic by heat or acid)
(A-1) Examples of the functional group that changes from hydrophobic to hydrophilic by heat or acid include known functional groups described in the literature.
Useful examples of these functional groups include alkylsulfonic acid esters, disulfones, sulfonimides described in JP-A No. 10-282672, alkoxyalkyl esters described in EP0652483 and WO92 / 9934, H.P. Ito et al., Macromolecules, vol. 21, pp. Examples thereof include t-butyl ester described in 1477, carboxylic acid ester protected with an acid-decomposable group described in literature such as silyl ester and vinyl ester.

Also, Masahiro Tsunooka, “Surface” vol. 133 (1995), pp. 374, an iminosulfonate group described by Masahiro Kadooka, Polymer preprints, Japan vol. 46 (1997), pp. Examples thereof include β-ketone sulfonates described in 2045 and nitrobenzyl sulfonate compounds described in JP-A-63-257750, but are not limited to these functional groups.
Among these, the secondary alkylsulfonic acid ester group shown below, the tertiary carboxylic acid ester group, and the alkoxyalkylester group shown below are particularly excellent.

  In the present invention, the secondary alkylsulfonic acid ester group that is particularly excellent as a functional group that changes from hydrophobic to hydrophilic by heat or acid is represented by the following general formula (A).

(In formula (A), R ¹⁰¹ and R ¹⁰² represent a substituted or unsubstituted alkyl group. R ¹⁰¹ and R ¹⁰² form a ring together with the secondary carbon atom (CH) to which R ¹⁰¹ and R ¹⁰² are bonded). May be.)

In the general formula (A), R ¹⁰¹ and R ¹⁰² represent a substituted or unsubstituted alkyl or a substituted or unsubstituted aryl group, and R ¹⁰¹ and R ¹⁰² together with a secondary carbon atom (CH) to which it is bonded. A ring may be formed. When R ¹⁰¹ and R ¹⁰² represent a substituted or unsubstituted alkyl group, the alkyl group may be a linear, branched or cyclic alkyl group such as a methyl group, an ethyl group, an isopropyl group, a t-butyl group, or a cyclohexyl group. And those having 1 to 25 carbon atoms are preferably used. When R ¹⁰¹ and R ¹⁰² represent a substituted or unsubstituted aryl group, the aryl group includes a carbocyclic aryl group and a heterocyclic aryl group. As the carbocyclic aryl group, those having 6 to 19 carbon atoms such as phenyl group, naphthyl group, anthracenyl group and pyrenyl group are used. In addition, as the heterocyclic aryl group, those containing 3 to 20 carbon atoms and 1 to 5 hetero atoms such as pyridyl group, furyl group, quinolyl group condensed with benzene ring, benzofuryl group, thioxanthone group, carbazole group, etc. Is used.

When R ¹⁰¹ and R ¹⁰² are a substituted alkyl group or a substituted aryl group, the substituent is a halogen atom such as an alkoxy group having 1 to 10 carbon atoms such as a methoxy group or an ethoxy group, a fluorine atom, a chlorine atom, or a bromine atom. , Trifluoromethyl group, halogen-substituted alkyl group such as trichloromethyl group, methoxycarbonyl group, ethoxycarbonyl group, t-butyloxycarbonyl group, p-chlorophenyloxycarbonyl, etc., alkoxycarbonyl having 2 to 15 carbon atoms Group or aryloxycarbonyl group; hydroxyl group; acyloxy group such as acetyloxy, benzoyloxy, p-diphenylaminobenzoyloxy; carbonate group such as t-butyloxycarbonyloxy group; t-butyloxycarbonylmethyloxy group, 2-pyranyloxy Ether groups such as amino groups, substituted, unsubstituted amino groups such as amino groups, dimethylamino groups, diphenylamino groups, morpholino groups, and acetylamino groups; thioether groups such as methylthio groups and phenylthio groups; alkenyl groups such as vinyl groups and steryl groups Nitro group; cyano group; acyl group such as formyl group, acetyl group and benzoyl group; aryl group such as phenyl group and naphthyl group; heteroaryl group such as pyridyl group and the like. Further, when R ¹⁰¹ and R ¹⁰² are substituted aryl groups, as the substituent, in addition to those described above, an alkyl group such as a methyl group or an ethyl group can be used.

R ¹⁰¹ and R ¹⁰² are preferably a substituted or unsubstituted alkyl group in terms of excellent stability over time, and more specifically, an alkoxy group, a carbonyl group, an alkoxycarbonyl group, a cyano group, a halogen group, and the like. An alkyl group substituted with an electron-withdrawing group or an alkyl group such as a cyclohexyl group or a norbornyl group is particularly preferable. As a physical property value, a compound in which the chemical shift of secondary methine hydrogen in proton NMR appears in a magnetic field lower than 4.4 ppm is preferable in deuterated chloroform, and a compound that appears in a magnetic field lower than 4.6 ppm is more preferable. Thus, an alkyl group substituted with an electron-withdrawing group is particularly preferred because the carbocation that appears to be formed as an intermediate during the thermal decomposition reaction is destabilized by the electron-withdrawing group and decomposition is suppressed. This is considered to be because of this. Specifically, the structure of —CHR ¹⁰¹ R ¹⁰² is particularly preferably a structure represented by the following formula.

  In the present invention, an alkoxyalkyl ester group that is particularly excellent as a functional group that changes from hydrophobic to hydrophilic by heat or acid is represented by the following general formula (B).

In the formula, R ¹⁰³ represents a hydrogen atom, R ¹⁰⁴ represents a hydrogen atom or an alkyl group having 18 or less carbon atoms, and R ¹⁰⁵ represents an alkyl group having 18 or less carbon atoms. Two of R ¹⁰³ , R ¹⁰⁴ and R ¹⁰⁵ may be combined to form a gap. In particular, R ⁴ and R ⁵ are preferably bonded to form a 5- or 6-membered ring.

As described above, the functional group that changes from hydrophobicity to hydrophilicity by heat or acid in the present invention is particularly preferably a secondary alkylsulfonic acid ester group represented by the general formula (A).
Specific examples of the functional groups represented by the general formulas (A) to (B) and tertiary carboxylic acid ester groups [functional groups (1) to (13)] are shown below.

((A-2) Functional group that changes from hydrophilic to hydrophobic by heat or acid)
In the present invention, the functional group that changes from hydrophilic to hydrophobic by heat or acid may be a known functional group such as an onium base described in JP-A-10-296895 and US Pat. No. 6,190,830. Mention may be made of polymers containing, in particular polymers containing ammonium salts. Specific examples include (meth) acryloyloxyalkyltrimethylammonium. Moreover, although the carboxylic acid group and carboxylic acid group which are shown by the following general formula (C) are mentioned as a suitable thing, it is not specifically limited to these illustrations.

(Wherein, X represents —O—, —S—, —Se—, —NR ¹⁰⁸ —, —CO—, —SO—, —SO ₂ —, —PO—, —SiR ¹⁰⁸ R ¹⁰⁹ —, —CS— R ¹⁰⁶ , R ¹⁰⁷ , R ¹⁰⁸ and R ¹⁰⁹ each independently represents a monovalent group, and M represents an ion having a positive charge.)
Specific examples of R ¹⁰⁶ , R ¹⁰⁷ , R ¹⁰⁸ , R ¹⁰⁹ include —F, —Cl, —Br, —I, —CN, —R ¹¹⁰ , —OR ¹¹⁰ , —OCOR ¹¹⁰ , —OCOOR ¹¹⁰ , —OCONR. _{^{110 R 111, -OSO 2 R 110}} , -COR 110, -COOR 110, -CONR 110 R 111, -NR 110 R 111, -NR 110 -COR 111, -NR 110 -COOR 111, -NR 110 -CONR 111 ^{R 112, -SR 110, -SOR 110} , -SO 2 R 110, -SO 3 R 110 , and the like.
R ¹¹⁰ , R ¹¹¹ , and R ¹¹² each represent a hydrogen atom, an alkyl group, an aryl group, an alkenyl group, or an alkynyl group.

Of these, preferred as R ¹⁰⁶ , R ¹⁰⁷ , R ¹⁰⁸ and R ¹⁰⁹ are specifically a hydrogen atom, an alkyl group, an aryl group, an alkynyl group and an alkenyl group.
M ⁺ is an ion having a positive charge, and specific examples include sodium ion, potassium ion, ammonium ion, lithium ion and the like, including hydrogen ion.
Specific examples [functional groups (14) to (31)] of the functional group represented by the general formula (C) are shown below.

The polymer compound having a polar conversion group in the present invention may be a homopolymer of one kind of monomer having the above functional group or may be a copolymer of two or more kinds. Moreover, as long as the effect of this invention is not impaired, the copolymer with another monomer may be sufficient.
In addition, the specific example of the monomer which has the above functional groups is shown below.
(Specific Examples of Monomers Having Functional Groups Represented by General Formulas (A) to (B) [Exemplary Monomers (M-1) to (M-15)])

(Specific Examples of Monomers Having Functional Groups Represented by General Formula (C) [Exemplary Monomers (M-16) to (M-33)])

(Photothermal conversion material)
When forming the hydrophilic / hydrophobic region on the surface of the pattern forming material using the polymer compound having the above-described polarity conversion group, if the energy to be applied is light energy such as an IR laser, the light energy is converted into heat energy. It is preferable that a photothermal conversion substance for conversion is contained somewhere in the pattern forming material. As a part to contain a photothermal conversion substance, you may make it contain in a pattern formation layer or a base material, and provide a photothermal conversion substance content layer separately on a pattern formation layer, and may make it contain there.

  As the photothermal conversion substance that can be used, any substance that absorbs light such as ultraviolet rays, visible rays, infrared rays, and white rays and can convert it into heat can be used. For example, carbon black, carbon graphite, pigments, phthalocyanine pigments, Examples thereof include iron powder, graphite powder, iron oxide powder, lead oxide, silver oxide, chromium oxide, iron sulfide, and chromium sulfide. Particularly preferred are dyes, pigments or metal fine particles having a maximum absorption wavelength from 760 nm to 1200 nm, which is the exposure wavelength of an infrared laser used for energy application.

  As the dye, commercially available dyes and known dyes described in literature (for example, “Dye Handbook” edited by the Society of Synthetic Organic Chemistry, published in 1970) can be used. Specific examples include azo dyes, metal complex salt azo dyes, pyrazolone azo dyes, anthraquinone dyes, phthalocyanine dyes, carbonium dyes, quinoneimine dyes, methine dyes, cyanine dyes, and metal thiolate complexes. Preferred dyes include, for example, cyanine dyes described in JP-A-58-125246, JP-A-59-84356, JP-A-59-202829, JP-A-60-78787, and the like. Methine dyes described in JP-A-58-173696, JP-A-58-181690, JP-A-58-194595, JP-A-58-112793, JP-A-58-224793, JP-A-59- 48187, JP-A-59-73996, JP-A-60-52940, JP-A-60-63744, etc., naphthoquinone dyes, JP-A-58-112792, etc. And cyanine dyes described in British Patent 434,875.

  Further, near infrared absorption sensitizers described in US Pat. No. 5,156,938 are also preferably used, and substituted arylbenzo (thio) pyrylium salts described in US Pat. Trimethine thiapyrylium salts described in JP-A-57-142645 (US Pat. No. 4,327,169), JP-A Nos. 58-181051, 58-220143, 59-41363, 59-84248, Pyryllium compounds described in JP-A-59-84249, JP-A-59-146063, JP-A-59-146061, cyanine dyes described in JP-A-59-216146, and U.S. Pat. No. 4,283,475 A pentamethine thiopyrylium salt or the like, or a pyrylium compound disclosed in Japanese Patent Publication Nos. 5-13514 and 5-19702 are also preferably used.Examples of other preferable dyes include near infrared absorbing dyes described as formulas (I) and (II) in US Pat. No. 4,756,993. Among these dyes, particularly preferred are cyanine dyes, squarylium dyes, pyrylium salts, and nickel thiolate complexes.

  As pigments used, commercially available pigments and color index (CI) manual, “Latest Pigment Handbook” (edited by Japan Pigment Technology Association, published in 1977), “Latest Pigment Applied Technology” (published by CMC, published in 1986) , “Printing Ink Technology”, published by CMC Publishing, 1984) can be used. Examples of the pigment include black pigments, yellow pigments, orange pigments, brown pigments, red pigments, purple pigments, blue pigments, green pigments, fluorescent pigments, metal powder pigments, and other polymer-bonded dyes. Specifically, insoluble azo pigments, azo lake pigments, condensed azo pigments, chelate azo pigments, phthalocyanine pigments, anthraquinone pigments, perylene and perinone pigments, thioindigo pigments, quinacridone pigments, dioxazine pigments, isoindolinone pigments In addition, quinophthalone pigments, dyed lake pigments, azine pigments, nitroso pigments, nitro pigments, natural pigments, fluorescent pigments, inorganic pigments, carbon black, and the like can be used. Among these pigments, carbon black is preferable.

  As the metal fine particles used, fine particles composed of Au, Ag, Pt, Cu, Ni, Zn, Pd, Cr, Fe, Pb, etc., and fine particles composed of oxides or sulfides of those metals are used. Specific examples include iron powder, graphite powder, iron oxide powder, lead oxide, silver oxide, chromium oxide, iron sulfide, and chromium sulfide.

  When using a photothermal conversion substance, as content, 0.01-50 mass% of the total solid of a photothermal conversion substance content layer is preferable from a viewpoint of a sensitivity, and 0.1-10 mass% is more preferable. In the case of a dye, it is particularly preferably 0.5 to 10% by mass, and in the case of a pigment, it is particularly preferably 3.1 to 10% by mass. In the case of metal fine particles, it is preferably used in a proportion of 0.01 to 50% by mass, particularly preferably 0.1 to 30% by mass.

(Acid generator)
In order to give an acid for polarity conversion to the pattern forming layer formed on the substrate by the surface graft polymerization described above, an acid generator is included in the pattern forming layer or on the pattern forming layer. Alternatively, an acid generating substance-containing layer may be separately provided and added thereto.

  The acid generator is a compound that generates an acid by heat or light. Generally, it is a photoinitiator for photocationic polymerization, a photoinitiator for photoradical polymerization, a photodecolorant for dyes, or a photochromic agent. Further, compounds that generate acid by known light used in microresist and the like, and mixtures thereof can be used, and these can be appropriately selected and used.

  For example, S.M. I. Schlesinger, Photogr. Sci. Eng. , 18, 387 (1974), T.A. S. Bal et al. , Polymer, 21, 423 (1980), etc., ammonium salts described in JP-A-3-140140, etc., phosphonium salts described in US Pat. No. 4,069,055, etc. Iodonium salts described in JP-A-2-150848, JP-A-2-296514, and the like; V. Crivello et al. , Polymer J. et al. 17, 73 (1985), U.S. Pat. No. 3,902,114, European Patent 233,567, U.S. 297,443, U.S. 297,442, U.S. Pat. 933,377, 4,491,628, 5,041,358, 4,760,013, 4,734,444, 2, No. 833,827, German Patent No. 2,904,626, No. 3,604,580, No. 3,604,581, etc.,

J. et al. V. Crivello et al. Selenonium salts described in C., Macromolecules, 10 (6), 1307 (1977) and the like. S. Wen et al. , Teh, Proc. Conf. Rad. Curing ASIA, p478, Tokyo, Oct (1988) and other onium salts such as arsonium salts, organic halogen compounds described in JP-A-63-298339, and organic compounds described in JP-A-2-161445, etc. Metal / organic halides; Hayase et al. , J .; Polymer Sci. , 25, 753 (1987), Japanese Patent Application Laid-Open No. 60-198538, Japanese Patent Application Laid-Open No. 53-133022, etc., photo acid generator having an o-nitrobenzyl type protecting group, Japanese Patent Application Laid-Open No. 64-18143. JP-A-2-165756, JP-A-3-140109, and the like, compounds such as iminosulfonates, which are photodecomposed to generate sulfonic acid, described in JP-A-61-166544, etc. The disulfone compound can be mentioned.

  From the viewpoint of sensitivity, these acid generators can be used in a proportion of 0.01 to 100% by mass, preferably 10 to 100% by mass, based on the total solid content of the acid generator material-containing layer.

[(B) Functional group whose hydrophilicity / hydrophobicity changes by light]
Among the functional groups whose polarity changes, there are those that change their polarity by light irradiation of 700 nm or less. Such a functional group whose polarity is changed by (B) light (polarity conversion group: polarity conversion group sensitive to light of 700 nm or less) is irradiated with light having a predetermined wavelength regardless of long wavelength exposure such as infrared rays or heat. The polarity is changed with high sensitivity by direct decomposition, ring opening or dimerization reaction. Hereinafter, the functional group whose polarity changes by light irradiation of 700 nm or less will be described.

(B) For the functional group whose polarity changes by light, (B-1) a functional group that changes from hydrophobic to hydrophilic by light, and (B-2) that changes from hydrophilic to hydrophobic by light. There are two types of functional groups.

((B-1) Functional group that changes from hydrophobic to hydrophilic by light)
(B-1) As a functional group which changes from hydrophobicity to hydrophilicity by light, for example, functional groups represented by the following general formulas (1) to (7) can be used.
In the present invention, examples of the functional group that changes from hydrophobic to hydrophilic by light include those represented by the following general formula (I).

(In the general formula (1), R ²⁰¹ and R ²⁰² each independently represents an alkyl group or an aromatic ring group. R ²⁰¹ and R ²⁰² may combine with each other to form a ring. )

In the general formula (1), R ²⁰¹ and R ²⁰² each independently represents an alkyl group or an aromatic ring group, and R ²⁰¹ and R ²⁰² may be bonded to each other to form a ring.
Alkyl group represented by R ^201, R ²⁰² is preferably in the range of 1 to 8 carbon atoms, such as methyl group, ethyl group, propyl group, butyl group, a pentyl group, a hexyl group, a heptyl group, Octyl group, isopropyl group, isobutyl group, s-butyl group, t-butyl group, cyclohexyl group, isopentyl group, neopentyl group, 1-methylbutyl group, isohexyl group, 2-ethylhexyl group, 2-methylhexyl group, cyclopentyl group, etc. R ²⁰¹ and R ²⁰² may be bonded to each other by a unit of — (CH ₂ ) _n —, (n = 1 to 4).
Among these, R ²⁰¹ and R ²⁰² are particularly preferably a ring structure formed by bonding to each other with units of — (CH ₂ ) _n — and (n = 1 to 4).

Further, the alkyl group represented by R ²⁰¹ and R ²⁰² may be substituted or unsubstituted, and as the substituent to be introduced, a monovalent nonmetallic atomic group excluding hydrogen is used. Preferred examples include halogen atoms such as F, Br, Cl and I, hydroxyl group, alkoxy group, amino group, formyl group, acyl group, carboxyl group, alkoxycarbonyl group, aryloxycarbonyl group, carbamoyl group, phenyl group, Biphenyl, naphthyl, tolyl, xylyl, mesityl, cumenyl, chlorophenyl, bromophenyl, chloromethylphenyl, hydroxyphenyl, methoxyphenyl, ethoxyphenyl, phenoxyphenyl, acetoxyphenyl, etc. Is mentioned.

The aromatic ring group represented by R ²⁰¹ and R ²⁰² preferably has 6 to 14 carbon atoms, and examples thereof include a phenyl group, a biphenyl group, a naphthyl group, and a mesityl group. A naphthyl group is preferred.
In addition, the aromatic ring group represented by R ²⁰¹ and R ²⁰² may be substituted or unsubstituted, and as the substituent to be introduced, a monovalent nonmetallic atomic group excluding hydrogen is used. Preferred examples include halogen atoms such as F, Br, Cl, and I, hydroxyl groups, alkoxy groups, amino groups, formyl groups, acyl groups, carboxyl groups, alkoxycarbonyl groups, aryloxycarbonyl groups, and the like.

As more specific examples of the above R ²⁰¹ and R ²⁰² , those in which the carbonyl group to be bonded and the terminal structure including the nitrogen atom bonded to the carbonyl group are represented by the following formula are particularly preferable.

  In the present invention, examples of the functional group that changes from hydrophobic to hydrophilic by light include those represented by the following general formula (2).

(In the general formula (2), R ²⁰³ and R ²⁰⁴ each independently represent a monovalent substituent. R ²⁰³ and R ²⁰⁴ may combine with each other to form a ring)

R ²⁰³ and R ^{204 in} the general formula (2) each independently represents a monovalent substituent, and specifically, an alkyl group, a hydroxyl group, an alkoxy group, an amino group, a formyl group, an acyl group, a carboxyl group Represents a group, a cyano group, or an aromatic ring group.
When R ²⁰³ and R ²⁰⁴ are alkyl groups, it is preferably in the range of 1 to 8 carbon atoms. For example, methyl group, ethyl group, propyl group, butyl group, pentyl group, hexyl group, heptyl group, Examples include octyl group, isopropyl group, isobutyl group, s-butyl group, t-butyl group, isopentyl group, neopentyl group, 1-methylbutyl group, isohexyl group, 2-ethylhexyl group, 2-methylhexyl group, and cyclopentyl group. R ²⁰¹ and R ²⁰² may be bonded to each other by units of — (CH ₂ ) _n —, (n = 1 to 4).
Among these, R ²⁰³ and R ²⁰⁴ are particularly preferably a methyl group, a — (CH ₂ ) _n —, a ring structure formed by bonding with each other by a unit of (n = 1 to 4), or a cyano group.

In addition, the alkyl group, hydroxyl group, alkoxy group, amino group, formyl group, acyl group, carboxyl group, or cyano group represented by R ²⁰³ and R ²⁰⁴ may be substituted or unsubstituted, respectively. As the substituent to be used, a monovalent nonmetallic atomic group excluding hydrogen is used. Preferred examples include halogen atoms such as F, Br, Cl and I, hydroxyl group, alkoxy group, amino group, formyl group, acyl group, carboxyl group, alkoxycarbonyl group, aryloxycarbonyl group, carbamoyl group, phenyl group, Biphenyl, naphthyl, tolyl, xylyl, mesityl, cumenyl, chlorophenyl, bromophenyl, chloromethylphenyl, hydroxyphenyl, methoxyphenyl, ethoxyphenyl, phenoxyphenyl, acetoxyphenyl, etc. Is mentioned.

The aromatic ring group represented by R ²⁰³ or R ²⁰⁴ preferably has 6 to 14 carbon atoms, and examples thereof include a phenyl group, a biphenyl group, a naphthyl group, and a mesityl group. A naphthyl group is preferred.
In addition, the aromatic ring group represented by R ²⁰³ and R ²⁰⁴ may be substituted or unsubstituted, and as the substituent to be introduced, a monovalent nonmetallic atomic group excluding hydrogen is used. Preferred examples include halogen atoms such as F, Br, Cl, and I, hydroxyl groups, alkoxy groups, amino groups, formyl groups, acyl groups, carboxyl groups, alkoxycarbonyl groups, aryloxycarbonyl groups, and the like.
Among these, R ²⁰³ and R ²⁰⁴ are more preferably an aromatic ring group having 6 to 14 carbon atoms which has at least one nitro group and may be substituted or unsubstituted.

As more specific examples of the above R ²⁰³ and R ²⁰⁴ , those in which the terminal structure including (—N═C) in the general formula (2) is represented by the following formula are particularly preferable.

  In the present invention, examples of the functional group that changes from hydrophobic to hydrophilic by light include those represented by the following general formula (3).

(In the general formula (3), R ²⁰⁵ and R ²⁰⁶ each independently represents an alkyl group or an aromatic ring group.)

Alkyl group represented by R ^205, R ²⁰⁶ is, for example, a methyl group, an ethyl group, a propyl group, a butyl group, a linear alkyl group ranging from 1 to 25 carbon atoms such as pentyl, or isopropyl It is preferably a branched alkyl group having 1 to 8 carbon atoms, such as a group, t-butyl group, s-butyl group, isopentyl group, or neopentyl group. Of these, a methyl group, an ethyl group, an isopropyl group, and a t-butyl group are preferable.
In addition, the alkyl group represented by R ²⁰⁵ and R ²⁰⁶ may be substituted or unsubstituted, and as the introduced substituent, a monovalent nonmetallic atomic group excluding hydrogen is used. Preferred examples include halogen atoms such as F, Br, Cl and I, hydroxyl group, alkoxy group, amino group, formyl group, acyl group, carboxyl group, alkoxycarbonyl group, aryloxycarbonyl group, carbamoyl group, phenyl group, Biphenyl, naphthyl, tolyl, xylyl, mesityl, cumenyl, chlorophenyl, bromophenyl, chloromethylphenyl, hydroxyphenyl, methoxyphenyl, ethoxyphenyl, phenoxyphenyl, acetoxyphenyl, etc. Is mentioned.

The aromatic ring group represented by R ²⁰⁵ and R ²⁰⁶ includes a carbocyclic aromatic ring group and a heterocyclic aromatic ring group. The carbocyclic aromatic ring group preferably has 6 to 19 carbon atoms. Among them, a benzene ring such as a phenyl group, a naphthyl group, an acetracenyl group, a pyrenyl group, a biphenyl group, a xylyl group, or a mesityl group. Is more preferably one ring to four rings. As the heterocyclic aromatic ring group, those having 3 to 20 carbon atoms and containing 1 to 5 heteroatoms are preferable. Among them, a pyridyl group, a furyl group, a quinolyl group having a benzene ring condensed, benzofuryl Group, thioxanthone group, carbazole group and the like are more preferable.
In addition, the aromatic ring group represented by R ²⁰⁵ and R ²⁰⁶ may be substituted or unsubstituted, and as the substituent to be introduced, a monovalent nonmetallic atomic group excluding hydrogen is used. Preferred examples include halogen atoms such as F, Br, Cl, and I, hydroxyl groups, alkoxy groups, amino groups, formyl groups, acyl groups, carboxyl groups, alkoxycarbonyl groups, aryloxycarbonyl groups, and the like.

  In the present invention, examples of the functional group that changes from hydrophobic to hydrophilic by light include those represented by the following general formula (4).

(In the general formula (4), R ²⁰⁷ represents an alkyl group or an aromatic ring group.)

Wherein R ²⁰⁷ in formula (4) represents an alkyl group or an aromatic ring group.
Alkyl group represented by R ²⁰⁷ is preferably in the range of 1 to 8 carbon atoms, such as methyl group, ethyl group, propyl group, butyl group, pentyl group, hexyl group, heptyl group, octyl group, Examples include isopropyl group, isobutyl group, s-butyl group, t-butyl group, isopentyl group, neopentyl group, 1-methylbutyl group, isohexyl group, 2-ethylhexyl group, 2-methylhexyl group, and cyclopentyl group.
In addition, the alkyl group represented by R ²⁰⁷ may be substituted or unsubstituted, and a monovalent nonmetallic atomic group excluding hydrogen is used as the introduced substituent. Preferred examples include halogen atoms such as F, Br, Cl and I, hydroxyl group, alkoxy group, amino group, formyl group, acyl group, carboxyl group, alkoxycarbonyl group, aryloxycarbonyl group, carbamoyl group, phenyl group, Biphenyl, naphthyl, tolyl, xylyl, mesityl, cumenyl, chlorophenyl, bromophenyl, chloromethylphenyl, hydroxyphenyl, methoxyphenyl, ethoxyphenyl, phenoxyphenyl, acetoxyphenyl, etc. Is mentioned.

Aromatic ring group represented by R ²⁰⁷ is preferably in the range of 6 to 14 carbon atoms, for example, a phenyl group, a biphenyl group, a naphthyl group, and a mesityl group. Among them, a phenyl group, a naphthyl group Is preferred.
The aromatic ring group represented by R ²⁰⁷ may be substituted or unsubstituted, and as the substituent to be introduced, a monovalent nonmetallic atomic group excluding hydrogen is used. Preferred examples include halogen atoms such as F, Br, Cl, and I, hydroxyl groups, alkoxy groups, amino groups, formyl groups, acyl groups, carboxyl groups, alkoxycarbonyl groups, aryloxycarbonyl groups, and the like.

As a more specific example of the above ^R207 , a structure represented by the following formula is particularly preferable.

  Moreover, as a polar conversion group in this invention, the well-known functional group of the literature description represented by following General formula (5)-General formula (7) can also be mentioned.

The general formula (V) This group is included in the quinonediazide polymer described in Jagannathan, SPIE (1994), page 2195. In the general formula (V), R ²⁰⁸ has 1 to 18 carbon atoms and is a linear, branched or cyclic alkyl group, an aralkyl group having 7 to 12 carbon atoms, an alkenyl group having 2 to 8 carbon atoms, or a carbon number. It represents a group containing an alkynyl group having 2 to 8 carbon atoms, an aromatic group having 6 to 18 carbon atoms, or an aromatic group connected to each other by a crosslinking member, and these groups may further have a substituent. .
The general formula (VI) is M.I. L. These groups are included in the phosphonic acid polymer described in Schilling, Macromol (1995), page 110. In the general formula (VI), R ⁸⁰⁹ and R ²¹⁰ each independently represents an alkyl group having 1 to 5 carbon atoms.
The general formula (VII) By Tsunooka, J.M. Polym. Sci. , Chem. Ed, (1996), a group contained in the oxime ester group-containing polymer described on page 2181. In General Formula (VII), R ²¹¹ has 1 to 18 carbon atoms, a linear, branched or cyclic alkyl group, an aralkyl group having 7 to 12 carbon atoms, an alkenyl group having 2 to 8 carbon atoms, and a carbon number It represents a group containing an alkynyl group having 2 to 8 carbon atoms, an aromatic group having 6 to 18 carbon atoms, or an aromatic group connected to each other by a crosslinking member, and these groups may further have a substituent. .

((B-2) Functional group that changes from hydrophilic to hydrophobic by light)
(B-2) Examples of the functional group that changes from hydrophilic to hydrophobic by light include a bispyridinioethylene group.

  The polymer compound having a functional group whose polarity is converted by light in the present invention may be a homopolymer using only one type of monomer having a functional group as described above, or a copolymer using two or more types. There may be. Moreover, as long as the effect of this invention is not impaired, the copolymer with another monomer may be sufficient. The compound having the functional group may be introduced by reacting with the graft polymer.

(writing)
In this embodiment, pattern writing for forming the interactive region is performed by irradiation with radiation such as light, application of acid, or heating. In addition, as an aspect of light irradiation, if the photothermal conversion substance is used in combination, a pattern can be formed by heating by scanning exposure such as laser light in the infrared region.
Examples of the method used for pattern formation include a method of writing by irradiation with radiation such as heating, application of an acid, and exposure. For example, light irradiation with an infrared laser, an ultraviolet lamp, visible light, or the like, thermal recording with a thermal head, or the like is possible. Examples of these light sources include mercury lamps, metal halide lamps, xenon lamps, chemical lamps, and carbon arc lamps. Examples of radiation include far infrared rays. Moreover, g line and i line are also used.
As specific embodiments generally used, direct image-like recording with a thermal recording head, scanning exposure with an infrared laser, high-illuminance flash exposure such as a xenon discharge lamp, infrared lamp exposure, ultraviolet lamp exposure, and the like are preferable. It is done.

  On the other hand, when a polarity conversion group that is sensitive to light of 700 nm or less is used, polarity conversion occurs in the pattern forming layer, that is, the above-described polarity conversion group is decomposed, ring-opened, or dimerized. Any means of light irradiation can be used as long as the aqueous property can be changed. For example, light irradiation with an ultraviolet lamp, visible light, or the like can be used. Examples of these light sources include mercury lamps, metal halide lamps, xenon lamps, chemical lamps, and carbon arc lamps.

In order to perform direct pattern formation using digital data of a computer, a method of causing polarity conversion by laser exposure is preferable. Lasers include gas lasers such as carbon dioxide lasers, nitrogen lasers, Ar lasers, He / Ne lasers, He / Cd lasers, Kr lasers, solid state lasers such as liquid (pigment) lasers, ruby lasers, Nd / YAG lasers, GaAs / Semiconductor lasers such as GaAlAs and InGaAs lasers, KrF lasers, XeCl lasers, XeF lasers, and excimer lasers such as Ar ₂ can be used.

<Pattern formation in metal pattern formation method (2)>
Hereinafter, metal pattern formation in the pattern forming method will be described.
In the metal pattern formation method (2), a polymerizable functional group and a polymerizable functional group on the surface of the substrate containing the precursor-derived polyimide represented by the general formula (I) having a polymerization initiation site in the skeleton according to the present invention; By contacting a compound having a functional group that interacts with the electroless plating catalyst or its precursor and irradiating the pattern with radiation, a graft polymer is generated in a pattern at the polymerization initiation site on the substrate surface. Thus, a region (interactive region) that interacts with the electroless plating catalyst or its precursor is formed in a pattern.

In this embodiment, the base material used is a base material containing a polyimide derived from the precursor represented by the general formula (I) containing the above-described polymerization initiation site in the skeleton.

  In the following description, “a compound having a polymerizable functional group and a functional group that interacts with an electroless plating catalyst or a precursor thereof” is appropriately referred to as an interactive group-containing polymerizable compound.

[Formation of pattern-like interactive regions by surface grafting]
In the metal pattern formation method (2), an interactive group-containing compound is brought into contact with the surface of the polyimide substrate, and energy is applied to form a chemical bond between the polymerizable group of the compound and the polyimide substrate. A region (interactive region) that interacts with a strong and durable electroless plating catalyst or a precursor thereof can be formed in a pattern.
A surface graft polymerization method can be used as a method for generating a chemical bond between the polymerizable group of the bond-containing interactive group-containing polymerizable compound and the substrate. This is in accordance with the means called surface graft polymerization described in the metal pattern formation layer in the metal pattern formation method (1). In the metal pattern formation method (1), the polymer compound to be grafted has a polar conversion group. In this embodiment, the composition containing the interactive group-containing polymerizable compound is directly bonded to the active site generated on the surface of the base material while being in contact with the composition.
This contact may be performed by immersing the substrate in a liquid composition containing the interactive group-containing polymerizable compound, but from the viewpoint of handling properties and production efficiency, as described later, It is preferable to form a layer containing a composition containing the interactive group-containing polymerizable compound as a main component on the surface of the substrate by a coating method.

In addition, the pattern formation layer in a metal pattern formation method (2) can be formed in the desired location on a base material. For example, if a film-like or plate-like polyimide base material is applied, the pattern forming layer may be formed only on one side of the base material or on both sides.
In the formation of the interactive region, for example, when a film-like or plate-like polyimide base material is applied, surface graft polymerization is simultaneously performed in a pattern on both surfaces of the base material. Alternatively, first, surface graft polymerization may be performed in a pattern on one surface, and then surface graft polymerization may be performed in a pattern on the other surface. Thereby, when a plating process such as electroless plating described later is performed, a metal pattern is formed on one side or both sides of the polyimide base material.

Below, formation of the surface graft by energy provision is demonstrated.
In this embodiment, the interactive region is formed by a method called surface graft polymerization. Graft polymerization gives active species on a polymer compound chain by applying energy by a conventionally known method such as light and heat, thereby further polymerizing another polymerizable compound that initiates polymerization, and then grafting. (Graft) A method of synthesizing a polymer, and is called surface graft polymerization, particularly when a polymer compound that gives active species forms a solid surface. In this invention, the surface of the said polyimide base material turns into a solid surface here.

In this embodiment, since the polyimide constituting the base material has a polymerization initiation site in its skeleton, such active sites can be easily formed with low energy. The interactive region can be formed in a pattern on the substrate surface.
Among the methods for creating a surface graft, it is preferable to adopt a photografting method in which energy is imparted by light irradiation.

(Interactive group-containing polymerizable compound)
The interactive group-containing polymerizable compound used in this embodiment includes a monomer having an interactive group, which will be described later, and a homopolymer and copolymer obtained using at least one selected from monomers having the interactive group. This refers to a polymer having an ethylene addition polymerizable unsaturated group (polymerizable group) such as a vinyl group, an allyl group, or a (meth) acryl group introduced as a polymerizable group. This polymer is a polymerizable group at least at the terminal or side chain. In particular, those having a polymerizable group at the terminal are preferable, and those having a polymerizable group at the terminal and side chain are more preferable.

<Example of monomer>
As the monomer that can be used, (meth) acrylic acid or its alkali metal salt and amine salt, itaconic acid or its alkali metal salt and amine salt, styrene sulfonate, and the like can be used. Specifically, 2-hydroxyethyl (meth) acrylate, (meth) acrylamide, N-monomethylol (meth) acrylamide, N-dimethylol (meth) acrylamide, allylamine or a hydrohalide thereof, 3-vinylpropionic acid Or alkali metal salts and amine salts thereof, vinylsulfonic acid or alkali metal salts and amine salts thereof, 2-sulfoethyl (meth) acrylate, polyoxyethylene glycol mono (meth) acrylate, 2-acrylamido-2-methylpropanesulfonic acid, Acid phosphooxypolyoxyethylene glycol mono (meth) acrylate, N-vinylpyrrolidone (the following structure), sodium styrenesulfonate, vinylbenzoic acid, etc. carboxyl group, sulfonic acid group, phosphoric acid group, amino Group or their salts, hydroxyl group, amido group, phosphine group, imidazole group, pyridine group, or their salts, and a monomer having a functional group such as ether group can be used.

Such an interactive group-containing polymerizable compound can be synthesized as follows.
As synthesis methods, i) a method in which a monomer having an interactive group and a monomer having a polymerizable group are copolymerized, and ii) a monomer having an interactive group and a monomer having a double bond precursor are copolymerized. And then introducing a double bond by treatment with a base or the like, iii) reacting a polymer having an interactive group with a monomer having a polymerizable group to introduce a double bond (introducing a polymerizable group) ) Method. A preferred synthesis method is, from the viewpoint of synthesis suitability, ii) a method in which a monomer having an interactive group and a monomer having a double bond precursor are copolymerized, and then a double bond is introduced by treatment with a base, iii) A method of introducing a polymerizable group by reacting a polymer having an interactive group with a monomer having a polymerizable group.

  Monomers used for the synthesis of the interactive group-containing polymerizable compound include (meth) acrylic acid or alkali metal salts and amine salts thereof, itaconic acid or alkali metal salts and amine salts thereof, 2-hydroxyethyl (meth) Acrylate, (meth) acrylamide, N-monomethylol (meth) acrylamide, N-dimethylol (meth) acrylamide, allylamine or its hydrohalide, 3-vinylpropionic acid or its alkali metal salt and amine salt, vinylsulfonic acid Or alkali metal salts and amine salts thereof, 2-sulfoethyl (meth) acrylate, polyoxyethylene glycol mono (meth) acrylate, 2-acrylamido-2-methylpropanesulfonic acid, acid phosphooxypolyoxyethylene Recall mono (meth) acrylate, N- vinylpyrrolidone (the following structure), etc. can be used. In general, functional groups such as carboxyl groups, sulfonic acid groups, phosphoric acid groups, amino groups, hydroxyl groups, amide groups, phosphine groups, imidazole groups, pyridine groups, and ether groups (when salt structures can be formed) Monomers having their salts) can be used.

Examples of the monomer having a polymerizable group that is copolymerized with the monomer having an interactive group include allyl (meth) acrylate and 2-allyloxyethyl methacrylate.
Examples of the monomer having a double bond precursor include 2- (3-chloro-1-oxopropoxy) ethyl methacrylate, and compounds (i-1 to i-60) described in JP-A No. 2003-335814. Among these, the following compound (i-1) is particularly preferable.

  Furthermore, polymerization used to introduce unsaturated groups by utilizing a reaction with a functional group such as a carboxyl group, an amino group or a salt thereof, a hydroxyl group, and an epoxy group in a polymer having an interactive group Examples of the monomer having a functional group include (meth) acrylic acid, glycidyl (meth) acrylate, allyl glycidyl ether, and 2-isocyanatoethyl (meth) acrylate.

Next, iii) a method of copolymerizing a monomer having an interactive group and a monomer having a double bond precursor and then introducing a double bond by treatment with a base or the like will be described in detail.
Regarding this synthesis method, the method described in JP-A No. 2003-335814 can be used.

-Base used for elimination reaction-
Preferred examples of the base used when introducing a double bond by treatment with a base include alkali metal hydrides, hydroxides or carbonates, organic amine compounds, and metal alkoxide compounds.

  Preferred examples of alkali metal hydrides, hydroxides or carbonates include sodium hydride, calcium hydride, potassium hydride, sodium hydroxide, potassium hydroxide, calcium hydroxide, potassium carbonate, sodium carbonate, carbonate Examples include potassium hydrogen and sodium hydrogen carbonate.

  Preferable examples of the organic amine compound include trimethylamine, triethylamine, diethylmethylamine, tributylamine, triisobutylamine, trihexylamine, trioctylamine, N, N-dimethylcyclohexylamine, N, N-diethylcyclohexylamine, N- Methyldicyclohexylamine, N-ethyldicyclohexylamine, pyrrolidine, 1-methylpyrrolidine, 2,5-dimethylpyrrolidine, piperidine, 1-methylpiperidine, 2,2,6,6-tetramethylpiperidine, piperazine, 1,4-dimethyl Piperazine, quinuclidine, 1,4-diazabicyclo [2,2,2] -octane, hexamethylenetetramine, morpholine, 4-methylmorpholine, pyridine, picoline, 4-dimethylaminopyridine, Cytidine, 1,8-diazabicyclo [5,4,0] -7-undecene (DBU), N, N'-dicyclohexylcarbodiimide (DCC), diisopropylethylamine, Schiff base, and the like.

  Preferable examples of the metal alkoxide compound include sodium methoxide, sodium ethoxide, potassium t-butoxide and the like.

These bases may be used individually by 1 type, and 2 or more types may be mixed and used for them.
The amount of the base used may be equal to or less than the equivalent of the double bond precursor in the compound, or may be equal to or more than the equivalent.
The temperature condition in the elimination reaction may be any of room temperature, cooling, and overheating. As preferable temperature conditions, it is the range of -20-100 degreeC.

Macromonomer can also be used as an example of an interactive group containing polymeric compound. As a method for producing the macromonomer used in the present embodiment, for example, Chapter 2 “Macromonomer” of “Macromonomer Chemistry and Industry” (editor, Yuya Yamashita) published on September 20, 1999 by the IP Publishing Office. Various production methods have been proposed in "Synthesis of". Particularly useful macromonomers used in this embodiment include macromonomers derived from carboxyl group-containing monomers such as acrylic acid and methacrylic acid, 2-acrylamido-2-methylpropanesulfonic acid, vinylstyrenesulfonic acid, And sulfonic acid macromonomer derived from a monomer of the salt thereof, (meth) acrylamide, N-vinylacetamide, N-vinylformamide, amide macromonomer derived from N-vinylcarboxylic acid amide monomer, hydroxyethyl methacrylate Macromonomer derived from hydroxyl group-containing monomers such as cocoon, hydroxyethyl acrylate, glycerol monomethacrylate, methoxyethyl acrylate, methoxy polyethylene glycol acrylate, polyethylene glycol Acrylate macromonomers derived from alkoxy group or ethylene oxide group-containing monomers such as. A monomer having a polyethylene glycol chain or a polypropylene glycol chain can also be usefully used as the macromonomer used in this embodiment.
Among these macromonomers, a useful molecular weight is in the range of 250 to 100,000, and a particularly preferable range is 400 to 30,000.

The solvent used in the composition containing such an interactive group-containing polymerizable compound is not particularly limited as long as it is a main component and can dissolve the interactive group-containing polymerizable compound and the hydrophilic monomer. Further, a surfactant may be added to the solvent.
Examples of the solvent that can be used include alcohol solvents such as methanol, ethanol, propanol, ethylene glycol, glycerin and propylene glycol monomethyl ether, acids such as acetic acid, ketone solvents such as acetone and cyclohexanone, amides such as formamide and dimethylacetamide. System solvents, and the like.

  The surfactant that can be added to the solvent as needed may be any that dissolves in the solvent. Examples of such surfactants include an anionic surfactant such as sodium n-dodecylbenzenesulfonate. Agents, cationic surfactants such as n-dodecyltrimethylammonium chloride, polyoxyethylene nonylphenol ether (commercially available products such as Emulgen 910, manufactured by Kao Corporation), polyoxyethylene sorbitan monolaurate (commercially available) Examples of the product include a trade name “Tween 20” and the like, and nonionic surfactants such as polyoxyethylene lauryl ether.

In the case where the composition is brought into contact in a liquid state, it can be arbitrarily carried out. In the case of forming an interactive region by a coating method, the coating amount is sufficiently exhibited in terms of solid content from the viewpoint of sufficiently exhibiting the interaction with the plating catalyst or its precursor and obtaining a uniform coating film. 0.1-10 g / m < ² > is preferable and 0.5-5 g / m < ² > is especially preferable.

-Formation of interactive regions-
Next, formation of the interactive region will be described.
There is no particular limitation on the energy application method in the formation method of the interactive region, as long as it is a method that can generate an active site on the surface of the polyimide base material and can apply energy that can be combined with the interactive group-containing polymerizable compound. However, from the viewpoint of cost and simplicity of the apparatus, a method of irradiating actinic rays is preferable.
When actinic light irradiation is applied to pattern exposure, both scanning exposure based on digital data and pattern exposure using a lith film can be used.
As a method of forming the interactive region in a pattern, the various writing methods mentioned above in the description of the pattern formation layer formation of the pattern formation method (1) can be preferably applied to this embodiment as well.

  By applying energy in this way, the active sites generated on the surface of the polyimide substrate and the interactive group-containing polymerizable compound are polymerized to form graft chains with high mobility. Further, as a preferred embodiment, by using an interactive group-containing polymerizable compound having a polymerizable group at the terminal and the side chain, the graft chain is further added to the side chain polymerizable group bonded to the specific polymerization initiation layer. As a result of bonding, a graft chain structure having branches is formed, the formation density and mobility of the graft are dramatically improved, and further high interaction with the electroless plating catalyst or its precursor is expressed. .

<< Step of imparting electroless plating catalyst or precursor thereof to interactive region >>
In this step, an electroless plating catalyst or a precursor thereof is applied on the interactive region formed in the pattern formation step.

<Electroless plating catalyst>
The electroless plating catalyst used in this step is mainly a zero-valent metal, and examples thereof include Pd, Ag, Cu, Ni, Al, Fe, and Co. In the present invention, Pd and Ag are particularly preferable because of their good handleability and high catalytic ability. As a method for fixing the zero-valent metal to the interactive region, for example, a metal colloid whose charge is adjusted so as to interact with an interactive group on the interactive region is applied to the interactive region. A technique is used. In general, a metal colloid can be prepared by reducing metal ions in a solution containing a charged surfactant or a charged protective agent. The charge of the metal colloid can be adjusted by the surfactant or the protective agent used here, and by interacting the metal colloid whose charge is adjusted in this way with the interactive group of the graft pattern, A metal colloid (electroless plating catalyst) can be selectively adsorbed on the graft pattern.

<Electroless plating catalyst precursor>
The electroless plating catalyst precursor used in this step can be used without particular limitation as long as it can become an electroless plating catalyst by a chemical reaction. Mainly, metal ions of zero-valent metal used in the electroless plating catalyst are used. The metal ion that is an electroless plating catalyst precursor becomes a zero-valent metal that is an electroless plating catalyst by a reduction reaction. The metal ion, which is an electroless plating catalyst precursor, may be converted into a zero-valent metal by a reduction reaction separately from the electroless plating catalyst after immersion in the electroless plating bath. The electroplating catalyst precursor may be immersed in an electroless plating bath and changed to a metal (electroless plating catalyst) by a reducing agent in the electroless plating bath.

Actually, the metal ion which is an electroless plating precursor is applied on the graft pattern in the form of a metal salt. The metal salt used is not particularly limited as long as it is dissolved in a suitable solvent and dissociated into a metal ion and a base (anion), and M (NO ₃ ) n, MCn, M _{2 / n} (SO ₄ ), M _{3 / n} (PO ₄ ) (M represents an n-valent metal atom), and the like. As a metal ion, the thing which said metal salt dissociated can be used suitably. Specific examples include, for example, Ag ions, Cu ions, Al ions, Ni ions, Co ions, Fe ions, and Pd ions, and Ag ions and Pd ions are preferable in terms of catalytic ability.

  As a method for applying a metal colloid as an electroless plating catalyst or a metal salt as an electroless plating precursor onto a graft pattern, the metal colloid is dispersed in an appropriate dispersion medium, or the metal salt is added with an appropriate solvent. A solution containing dissolved and dissociated metal ions is prepared, and the solution is applied to the surface of the substrate on which the graft pattern exists, or the substrate having the graft pattern is immersed in the solution. Contacting a solution containing a metal ion to adsorb a metal ion to an interactive group on the interactive region by using an ion-ion interaction or a dipole-ion interaction; or The interaction region can be impregnated with metal ions. From the viewpoint of sufficiently performing such adsorption or impregnation, the metal ion concentration or the metal salt concentration in the solution to be contacted is preferably in the range of 0.01 to 50% by mass, preferably 0.1 to 30%. More preferably, it is in the range of mass%. Further, the contact time is preferably about 1 minute to 24 hours, more preferably about 5 minutes to 1 hour.

<< Process for forming a metal film in a pattern by electroless plating >>
In this step, a metal film is formed in a pattern by performing electroless plating on a substrate provided with an electroless plating catalyst or a precursor thereof in an interactive region. That is, by performing electroless plating in this step, a high-density metal film (metal pattern) according to the pattern is formed on the graft pattern obtained by the above step. The formed metal pattern has excellent conductivity and adhesion.

<Electroless plating>
Electroless plating refers to an operation of depositing a metal by a chemical reaction using a solution in which metal ions to be deposited as a plating are dissolved.
In the electroless plating in this step, for example, a substrate provided with a pattern of an electroless plating catalyst is washed with water to remove excess electroless plating catalyst (metal), and then immersed in an electroless plating bath. Do. As the electroless plating bath to be used, a generally known electroless plating bath can be used.
In addition, in the case where a substrate provided with a pattern of the electroless plating catalyst precursor is immersed in an electroless plating bath with the electroless plating catalyst precursor adsorbed or impregnated in the craft pattern, the substrate is washed with water. Then, after removing an excess precursor (metal salt or the like), it is immersed in an electroless plating bath. In this case, reduction of the precursor and subsequent electroless plating are performed in the electroless plating bath. As the electroless plating bath used here, a generally known electroless plating bath can be used as described above.

The composition of a general electroless plating bath is as follows: 1. metal ions for plating, 2. reducing agent; Additives (stabilizers) that improve the stability of metal ions are mainly included. In addition to these, the plating bath may contain known additives such as a plating bath stabilizer.
As the types of metals used in the electroless plating bath, copper, tin, lead, nickel, gold, palladium, and rhodium are known, and among these, copper and gold are particularly preferable from the viewpoint of conductivity.
In addition, there are optimum reducing agents and additives according to the above metals. For example, a copper electroless plating bath contains Cu (SO ₄ ) ₂ as a copper salt, HCOH as a reducing agent, and a chelating agent such as EDTA or Rochelle salt as a copper ion stabilizer as an additive. The plating bath used for electroless plating of CoNiP includes cobalt sulfate and nickel sulfate as metal salts, sodium hypophosphite as a reducing agent, sodium malonate, sodium malate and sodium succinate as complexing agents. It is included. Further, the electroless plating bath of palladium contains (Pd (NH ₃ ) ₄ ) Cl ₂ as metal ions, NH ₃ and H ₂ NNH ₂ as reducing agents, and EDTA as a stabilizer. These plating baths may contain components other than the above components.

  The film thickness of the metal film thus formed can be controlled by the concentration of the metal salt or metal ion in the plating bath, the immersion time in the plating bath, or the temperature of the plating bath. Is preferably 0.5 μm or more, more preferably 3 μm or more. Further, the immersion time in the plating bath is preferably about 1 minute to 12 hours, and more preferably about 1 minute to 1 hour.

  In the metal film portion of the metal pattern obtained as described above, the electroless plating catalyst and the fine particles of the plating metal are firmly dispersed in the surface graft film by cross-sectional observation by SEM, and further, a relatively large size is further formed thereon. It was confirmed that particles were precipitated. Since the interface is a hybrid state of the graft polymer and fine particles, the adhesion is good even if the unevenness difference of the interface between the substrate (organic component) and the inorganic substance (electroless plating catalyst or plating metal) is 100 nm or less. It was.

《Electroplating process》
In the metal pattern formation method of this invention, you may have the process (electroplating process) of performing electroplating after the process of performing the said electroless plating and forming a metal film in pattern shape.
In this step, after the electroless plating, the metal film formed by this step can be used as an electrode for further electroplating. As a result, a metal film having an arbitrary thickness can be easily formed on the basis of a metal pattern having excellent adhesion to the substrate. By adding this step, a patterned metal film can be formed with a thickness according to the purpose, and it is suitable for applying the metal pattern of the present invention to various applications such as a wiring pattern.
As the electroplating method in the present invention, a conventionally known method can be used. In addition, as a metal used for the electroplating of this process, copper, chromium, lead, nickel, gold, silver, tin, zinc, etc. are mentioned. From the viewpoint of conductivity, copper, gold, and silver are preferable. More preferred.

  The film thickness of the metal film obtained by electroplating differs depending on the application, and can be controlled by adjusting the concentration of metal contained in the plating bath, the dipping time, or the current density. In addition, the film thickness in the case of using it for general electric wiring etc. is preferably 0.5 μm or more, and more preferably 3 μm or more from the viewpoint of conductivity.

  In addition, as described above, the electroplating process in the present invention can be used to mount an IC or the like by performing gold plating, for example, in addition to forming a patterned metal film with a thickness according to the purpose. You can also The plating performed for this purpose uses a material selected from the group consisting of nickel, palladium, gold, silver, tin, solder, rhodium, platinum, and compounds thereof on the surface of the metal pattern formed of copper or the like. Can be done.

《Drilling process》
In the metal pattern forming method of the present invention, an opening such as through-hole via formation is provided in the base material, in order to increase the density of the circuit constituted by the metal pattern, and to achieve high-density mounting of the mounted components. You may further have a drilling process. In the drilling process, when further increasing the density of circuit wiring and high-density mounting of mounting components, circuit wiring is formed on both surfaces of the base material, or a plurality of base materials on which circuit wiring is formed are laminated. As a matter of course, multilayering of circuit boards is also performed, and as a means for ensuring the conduction between layers, it is performed for forming a through hole or the like in a printed wiring board.
In the drilling step, any method can be used as long as it is a method used for drilling such as through-hole via formation at the time of manufacturing a printed wiring board. Further, details such as the shape and the size of the holes to be formed can be set as appropriate.

  As a processing method for forming the hole, a drilling method or a processing method using a laser such as a carbon dioxide laser, a UV laser, or an excimer laser that has been widely used in recent years can be used. Laser processing is very excellent in that extremely fine processing can be performed with high accuracy. When laser processing is performed, smear may remain on the inner wall of the through hole. Therefore, it is preferable to remove smear by chemical treatment or plasma treatment after forming the through hole. However, when the material on which the metal pattern is formed according to the present invention is used for TAB applications, it is preferable to perform drilling for mounting the IC using a drill.

  In the metal pattern forming method of the present invention, the drilling step may be performed at any stage. For example, it may be performed after the metal pattern is formed, may be performed before the graft polymer is formed in a pattern, or may be performed after the graft polymer is formed in a pattern. However, when it is necessary to conduct the conductive treatment described later on the hole after drilling, it is preferable to perform the drilling step after the graft polymer is formed in a pattern. This is because the plating on the graft polymer pattern can be performed simultaneously with the plating on the holes.

<< Conductive treatment process >>
In this invention, you may have the process of performing an electroconductive process to the hole formed by the said process after the above-mentioned drilling process (conductive process process). In addition, this process may be performed independently from the above-described other processes, and other processes (such as the electroless plating process) may also serve as this process.
In this step, the hole formed by the above-described hole-piercing step is made conductive by embedding a conductive material in the hole. Specific examples of the conductive material include copper, nickel, chromium, titanium, aluminum, molybdenum, tungsten, zinc, tin, indium, gold, silver, and the like, or alloys thereof (such as nichrome). ); Conductive polymer materials such as polypyrrole and polythiophene; non-metallic inorganic conductive materials such as graphite and conductive ceramics; and the like.

Examples of the method for embedding the conductive material in the hole include an electroless plating method or a coating method. The reason for this is that the electroless plating method and the coating method enable relatively uniform and easy conductivity formation in a minute space such as the inner surface of the hole.
Specifically, for example, when conducting a conductive treatment by embedding a metal material in the hole, a chemical metal plating method (electroless plating method) is particularly preferably performed by applying a catalyst to the inside of the hole. . This electroless plating is conveniently performed simultaneously with the electroless plating process on the graft polymer in the above-described electroless plating step.

  Further, in the case where the inside of the hole is filled with a conductive polymer material for conducting the conductive treatment, an electroless plating method or a coating method is employed. In the electroless plating method, an appropriate oxidizing agent is applied to the inside of the hole, and then the substrate is immersed in a solution containing pyrrole or thiophene monomer, for example, a pyrrole solution. In the application method, a solution obtained by dissolving a conductive polymer such as polypyrrole or poly 1,4 dioxythiophene in a solvent may be used, and this solution may be applied on the graft layer and the hole provided on the substrate.

  In addition, in the case where the inside of the hole is filled with a non-metallic inorganic conductive material such as graphite and the conductive treatment is performed, an electroless plating method using no catalyst is suitably employed. In the case of using graphite plating as an example, the surface of the hole is treated with a pretreatment liquid, and then the laminate is immersed in the graphite dispersion. A representative example of the graphite plating solution that can be used in this process is Direct Plating (registered trademark), which is a graphite plating solution manufactured by MEC. This graphite plating solution is a set of a pretreatment liquid (MEC S process SP-6560) and a graphite dispersion liquid (MEC S process SP-6601).

<Rust prevention treatment>
In the present invention, the formed metal pattern can be subjected to rust prevention treatment.
As the rust prevention treatment applicable to the present invention, any of the rust prevention treatment methods usually used at the time of producing a printed wiring board can be used. For example, a method of plating zinc on a substrate, a method of applying a flux, a method of applying a solder resist, or the like can be used.

《Other processing》
When a metal pattern is formed by a carbon dioxide gas laser and then processing such as drilling is performed on the base material together with the metal, the surface treatment and surface shape of the metal film (metal pattern) formed on the base material are: It often has a great influence on the absorption of carbon dioxide laser. For this reason, the surface area of the metal film may be roughened by CZ treatment or the like to increase the surface area and increase the absorption of the carbon dioxide laser. Here, the CZ treatment specifically means that after the base material on which the metal film composed of copper or the like is formed is immersed in a mixed solution of formic acid and hydrochloric acid, the substrate is washed with water and the treatment liquid is washed away. This is a process for roughening the surface. The treatment time is preferably 2 minutes or more and less than 10 minutes.

Below, the metal pattern obtained by the metal pattern formation method of this invention is demonstrated.
The metal pattern formed by the present invention is a metal pattern in which a metal film is locally provided on a substrate having a surface irregularity of 100 nm or less, and the adhesion between the substrate and the metal film is It is characterized by being good. That is, the substrate surface is smooth, and the adhesion between the substrate and the metal film is excellent.
In addition, the surface unevenness | corrugation is the value measured by cut | disconnecting a base material or the metal pattern after formation perpendicularly | vertically with respect to a base-material plane, and observing the cross section by SEM.
The adhesion value between the base material and the metal film is 4 at 140 ° C. by bonding a copper plate (0.1 mm) to the surface of the metal pattern with an epoxy adhesive (trade name: Araldite, manufactured by Ciba Geigy). It is a value obtained by a 90-degree peeling experiment based on JIS C6481 (1994 version) after drying for a period of time.

In a general metal pattern, the metal pattern excellent in the high frequency characteristic can be obtained by making the unevenness of the substrate surface, that is, the unevenness of the interface with the metal film, 100 nm or less. However, since the conventional metal pattern reduces the unevenness of the surface of the base material, the adhesion between the base material and the metal film is reduced, so the surface of the base material is inevitably roughened by various methods, and the metal pattern is formed on the surface. The technique of providing a film was taken. Therefore, the unevenness of the interface in the conventional metal pattern is generally 1000 nm or more.
However, the metal pattern formed according to the present invention maintains the adhesion between the base material and the metal film because the metal film and the polymer directly chemically bonded to the base material are in a hybrid state. It has become possible.
In the metal pattern formed according to the present invention, a substrate having a surface irregularity of 100 nm or less is selected, more preferably 25 to 100 nm, and still more preferably 50 to 100 nm.
As described above, the metal pattern formed according to the present invention has excellent adhesion between the base material and the metal film while minimizing unevenness at the base material interface.

  EXAMPLES Hereinafter, although an Example demonstrates this invention in detail, this invention is not limited to these.

[Example 1]
(Synthesis of polyimide precursor (polyamic acid))
Under nitrogen, 4,4′-diaminodiphenyl ether (5.75 g: 28.7 mmol) was dissolved in N-methylpyrrolidone (30 ml) and stirred at room temperature for about 30 minutes.
To this solution, 3,3 ′, 4,4′-benzophenone tetracarboxylic dianhydride (9.25 g: 28.7 mmol) was added at 0 ° C. and stirred for 5 hours. The reaction solution was reprecipitated to obtain a polyimide precursor. The molecular weight (Mw) by GPC was 28,000. Details of the measurement conditions are as follows. Further, the structure was confirmed by ¹ H-NMR and FT-IR.

-Measurement of weight average molecular weight (Mw)-
It measured by the gel permeation chromatography (GPC) method by the following conditions.
<Sample> A 0.01 g sample was dissolved in 2 cc of tetrahydrofuran and prepared by filtration.
<Standard polystyrene> Standard polystyrene TSK standard manufactured by Tosoh Corporation was used. <Apparatus> High speed gel permeation chromatogram (HCL-8220GPC) manufactured by Tosoh Corporation
<Column>Tosoh's TSK-gel (GMX)
<Measurement temperature> 40 ° C. Flow rate: 1 cc / min

(Preparation of polyimide substrate)
The polyamic acid synthesized by the above method was dissolved in DMAc (manufactured by Wako Pure Chemical Industries, Ltd.) to give a 20 wt% solution. The solution was applied to a glass substrate using a rod bar # 36, dried at 100 ° C. for 5 minutes, heated at 250 ° C. for 30 minutes to solidify, and peeled from the glass substrate to obtain a polyimide substrate (thickness: 15 μm).

(Pattern formation)
A coating solution having the following composition was applied to the polyimide film prepared by the above method using rod bar # 18 to obtain pattern forming material A. In addition, the film thickness of the film | membrane formed on the base material was 0.8 micrometer.

<Composition of coating solution>
・ Polymerizable group-containing polymer (synthesis method is shown below) 0.25 g
・ Cyclohexanone 8.0g

<Method for synthesizing the polymerizable group-containing polymer>
In a 500 ml three-necked flask, 58.6 g of 2-hydroxyethyl methacrylate was added, 250 ml of acetone was added and stirred. After adding 39.2 g of pyridine and 0.1 g of p-methoxyphenol, the mixture was cooled in an ice bath containing ice water. After the temperature of the mixture became 5 ° C. or lower, 114.9 g of 2-bromoisobutanoic acid bromide was added dropwise using a dropping funnel over 3 hours. After completion of dropping, the ice bath was removed and the mixture was further stirred for 3 hours. The reaction mixture was poured into 750 ml of water and stirred for 1 hour. The aqueous mixture was extracted three times with 500 ml of ethyl acetate using a separatory funnel. The organic layer was washed successively with 500 ml of 1M hydrochloric acid, 500 ml of saturated aqueous sodium hydrogen carbonate solution and 500 ml of saturated brine. 100 g of magnesium sulfate was added to the organic layer, dehydrated and dried, and then filtered. The solvent was distilled off under reduced pressure to obtain 120.3 g of monomer A.

Next, 40 g of N, N-dimethylacetamide was placed in a 1000 ml three-necked flask and heated to 70 ° C. under a nitrogen stream. A solution of monomer A 12.58 g, methacrylic acid 27.52 g, V-601 (manufactured by Wako Pure Chemical Industries) 0.921 g in N, N-dimethylacetamide 40 g was added dropwise over 2.5 hours. After completion of dropping, the mixture was heated to 90 ° C. and further stirred for 2 hours. The reaction solution was cooled to room temperature and then poured into 3.5 L of water to precipitate a polymer compound. The precipitated polymer compound was collected by filtration, washed with water and dried to obtain 30.5 g of a polymer compound. As a result of measuring the weight average molecular weight of the obtained polymer compound by gel permeation chromatography (GPC) using polystyrene as a standard substance, it was 124,000.
In a 200 ml three-necked flask, 26.0 g of the polymer compound obtained and 0.1 g of p-methoxyphenol were added, dissolved in 60 g of N, N-dimethylacetamide and 60 g of acetone, and cooled in an ice bath containing ice water. After the temperature of the mixture became 5 ° C. or lower, 60.4 g of 1,8-diazabicyclo [5.4.0] -7-undecene (DBU) was added dropwise over 1 hour using a dropping funnel. After completion of dropping, the ice bath was removed and the mixture was further stirred for 8 hours. The reaction solution was poured into 2 L of water in which 17 ml of concentrated hydrochloric acid was dissolved to precipitate a polymerizable group-containing polymer. The precipitated polymerizable group-containing polymer was collected by filtration, washed with water, and dried to obtain 15.6 g.

  The obtained film was subjected to pattern exposure using a 1.5 kW high pressure mercury lamp for 1 minute. Thereafter, the obtained film was washed with saturated aqueous sodium hydrogen carbonate to obtain graft pattern material A in which an interactive region was formed.

(Electroless plating)
The graft pattern material A was immersed in a 0.1% by mass aqueous solution of palladium nitrate (manufactured by Wako Pure Chemical Industries, Ltd.) for 1 hour and then washed with distilled water. Then, the metal pattern A was obtained by being immersed in an electroless plating bath having the following composition at 40 ° C. for 20 minutes.

<Electroless plating bath components>
・ OPC Kappa-H T1 (Okuno Pharmaceutical Co., Ltd.) 6mL
・ OPC Kappa-H T2 (Okuno Pharmaceutical Co., Ltd.) 1.2mL
・ OPC Kappa-H T3 (Okuno Pharmaceutical Co., Ltd.) 10mL
・ Water 83mL

[Example 2]
The metal pattern produced in Example 1 was further electroplated in an electroplating bath having the following composition for 15 minutes to obtain a metal pattern B.

<Composition of electroplating bath>
・ Copper sulfate 38g
・ 95 g of sulfuric acid
・ Hydrochloric acid 1mL
・ Copper Greeme PCM (Meltex Co., Ltd.) 3mL
・ Water 500g

[Example 3]
The polyimide substrate prepared in Example 1 was immersed in an aqueous solution containing acrylic acid (10% by mass) and sodium periodate (NaIO ₄ , 0.01% by mass), and the above high pressure of 1.5 kW under an argon atmosphere. Using a mercury lamp, light was irradiated for 30 minutes. After irradiation with light, the resulting film was thoroughly washed with ion exchange water to obtain a substrate grafted with acrylic acid.
Next, an aqueous solution comprising 1 liter of water, 40 g of N-ethyl-N ′ (3-dimethylaminopropyl) carbodiimide hydrochloride and 6 g of N-hydroxysuccinimide was prepared, and a substrate on which acrylic acid was grafted Was immersed for 1 hour for ester conversion. Thereafter, 6 g of 2-nitrobenzylphenol was further added and reacted to obtain a pattern forming material C having a pattern forming layer made of a polymer having a photodegradable functional group.

  The obtained pattern forming material C was imagewise exposed with a laser emitting blue light having a wavelength of 400 nm (beam diameter 20 μm) to obtain a graft pattern material C in which an interactive region was formed.

(Electroless plating)
The obtained pattern forming material C was immersed in a 0.1% by mass aqueous solution of palladium nitrate (manufactured by Wako Pure Chemical Industries, Ltd.) for 1 hour, and then washed with distilled water. Thereafter, electroless plating was performed in the same electroless plating bath as in Example 1 for 20 minutes to obtain a metal pattern C.

[Example 4]
The polyimide film prepared in Example 1 was immersed in a t-butyl acrylate solution (30% by mass, solvent: propylene glycol monomethyl ether (MFG)), and exposed for 30 minutes using a 1.5 kW high pressure mercury lamp in an argon atmosphere. did. The film obtained after the light irradiation was thoroughly washed with propylene glycol monomethyl ether (MFG) to obtain a pattern forming material D grafted with poly-t-butyl acrylate.

On the obtained pattern forming material C, a solution having the following composition was applied. The film thickness of the obtained film was 0.5 μm.
・ Triphenylsulfonium triflate 0.05g
・ Methyl ethyl ketone (MEK) 1g

  Next, the obtained film was subjected to pattern exposure for 1 minute using a 400 W high pressure mercury lamp, and post-heated at 90 ° C. for 2 minutes. Thereafter, the obtained film was washed with methyl ethyl ketone (MEK) to obtain a graft pattern material D in which an interactive region was formed in which the functional group of the exposed portion was converted to an adsorptive group.

(Electroless plating method)
The obtained pattern forming material D was immersed in an aqueous solution of 0.1% by mass of palladium nitrate (manufactured by Wako Pure Chemical Industries) for 1 hour, washed with distilled water, and then in the same electroless plating bath as in Example 1. Electroless plating was performed at 40 ° C. for 20 minutes to obtain a metal pattern D.

[Example 5]
A pattern-like interactive region is formed on one surface (front surface) of the polyimide base material in the same manner as in Example 1, and the pattern-like interactive region is formed in the same manner with respect to the other surface (back surface). To obtain a graft pattern material E in which a pattern-like interactive region was formed on both surfaces of the substrate. Thereafter, electroless plating was performed in the same manner as in Example 1, and electroplating was further performed in the same manner as in Example 2 to obtain a metal pattern E in which both surfaces of the polyimide substrate were plated.

[Example 6]
The metal pattern obtained in Example 2 was subjected to galvanization for 1 minute under the conditions of a liquid temperature of 40 ° C. and a current density of 15 A / dm ² using a zinc sulfate bath having the following composition to obtain a metal pattern F. It was. In addition, the galvanization performed in the present Example is a rust prevention process.

<Zinc sulfate bath composition>
・ Sulfuric acid 70g / L
・ Zinc 20g / L

[Example 7]
The graft pattern formed on both sides of the substrate is connected to the graft pattern material G produced in the same manner as the graft pattern material E produced in Example 5 in which the patterned interactive regions are formed on both sides of the substrate. Drilling was performed with an NC drill.

Next, the graft pattern material G after the drilling process was immersed in a liquid A having the following composition for 5 minutes.
<Composition of liquid A>
・ 10g tin chloride
・ 40 mL of hydrochloric acid
・ Water 1000mL
Next, it was immersed in liquid B having the following composition for 10 minutes.
<Composition of liquid B>
・ Palladium chloride 0.1g
・ Hydrochloric acid 1mL
・ Water 1000mL

  Thereafter, electroless plating was performed for 10 minutes in the same manner as in Example 1 to form metal patterns on both surfaces (front and back) of the substrate and through holes connecting the metal patterns on both surfaces of the substrate. Next, electroplating was performed for 15 minutes in the same manner as in Example 2 to obtain a metal pattern G.

[Evaluation]
(Measurement of fine width of metal pattern)
The fine line widths of the metal patterns obtained in Examples 1 to 7 were measured using an optical microscope (trade name: OPTI PHOTO-2, manufactured by Nikon Corporation). The measurement results are shown in Table 1 below.

(Measurement of metal film thickness)
The metal patterns obtained in Examples 1 to 7 were cut perpendicularly to the substrate plane using a microtome, the cross section was observed with SEM, and the thickness of the formed metal film was measured. The measurement represents an average obtained by measuring three points per sample. The measurement results are shown in Table 1 below.

(Evaluation of unevenness on the substrate interface)
The metal patterns obtained in Examples 1 to 7 are cut perpendicularly to the substrate plane using a microtome, and the cross section of the metal pattern is observed with an SEM, thereby confirming irregularities at the substrate interface. Next, at this substrate interface, three random observation points were taken for one sample, the difference between the maximum peak height and the minimum valley depth at each observation point was taken as the size of the unevenness, and the average value of the three points was obtained. . The measurement results are shown in Table 1 below.

(Evaluation of adhesion)
A copper plate (0.1 mm) was bonded to the surface of the metal pattern obtained in Examples 1 to 7 with an epoxy adhesive (trade name: Araldite, manufactured by Ciba Geigy), dried at 140 ° C. for 4 hours, and then JIS C6481. A 90-degree peeling experiment was conducted based on (1994 version). The measurement results are shown in Table 1 below.

(Evaluation of heat resistance)
The material on which the metal pattern obtained in Examples 1 to 7 was formed was heated at 300 ° C. for 1 hour. Next, the surface of the metal pattern was rubbed 50 times by hand using a cloth moistened with water (BEMCOT, manufactured by Asahi Kasei Kogyo Co., Ltd.). After rubbing, the surface was observed with a transmission electron microscope (JEOL JEM-200CX) at a magnification of 100,000 times, and the heat resistance was evaluated based on the evaluation criteria.
-Evaluation criteria-
○: No change ×: Change such as peeling of metal pattern

According to the results of Table 1, it was found that in the metal pattern obtained by the metal pattern forming method of the present invention, a thin line having a width of 30 μm or less, which was difficult in the prior art, was formed. . Moreover, it was confirmed that these fine line widths change depending on the formation method of the graft pattern (interactive region) and the exposure conditions. Thus, according to the present invention, it is possible to obtain a metal pattern having a desired fine line width according to the purpose.
Furthermore, all of the metal patterns obtained by the metal pattern forming method of the present invention have 100 μm or less of unevenness at the film interface, and are excellent in surface smoothness, adhesion between the substrate and the metal film, It was found that heat resistance was also excellent.
In addition, about Example 7, while being excellent in the fine line | wire width, metal film thickness, the unevenness | corrugation of a metal interface, adhesiveness, and heat resistance, it is electrically connected also about the metal pattern formed in both surfaces of the base material. Was confirmed.

Claims (9)

Energy is imparted in a pattern to a substrate surface containing a precursor-derived polyimide represented by the following general formula (I) having a polymerization initiation site in the skeleton, and generated at the polymerization initiation site on the substrate surface. and the active points as a starting point, and forming a region generated in a pattern a graft polymer having a functional group capable of interacting with an electroless plating catalyst or its precursor to the substrate surface,
Applying an electroless plating catalyst or a precursor thereof to the region;
Performing electroless plating to form a patterned metal film;
A metal pattern forming method characterized by comprising:

In general formula (I), R ¹ represents a tetravalent organic group, R ² represents a divalent organic group, and n represents an integer of 1 or more. At least one of R ¹ and R ² is a group including a structure having a polymerization initiating ability. Energy is imparted to the surface of the base material containing the precursor-derived polyimide represented by the following general formula (I) having a polymerization start site in the skeleton, and active sites are generated at the polymerization start site on the base material surface. From the active site, a polymerizable functional group and a functional group that changes to a structure that interacts with an electroless plating catalyst or a precursor thereof by heat, acid, or radiation, or the interaction A compound having a functional group to be lost is polymerized, a polymer compound layer is provided, and heat, acid, or width rays are applied to the polymer compound layer in a pattern, whereby an electroless plating catalyst or Forming a region that interacts with the precursor in a pattern;
Applying an electroless plating catalyst or a precursor thereof to the region;
Performing electroless plating to form a patterned metal film;
A metal pattern forming method characterized by comprising:

In general formula (I), R ¹ represents a tetravalent organic group, R ² represents a divalent organic group, and n represents an integer of 1 or more. At least one of R ¹ and R ² is a group including a structure having a polymerization initiating ability. A functional group capable of interacting with a polymerizable functional group and an electroless plating catalyst or its precursor on a substrate surface containing a polyimide derived from a precursor represented by the following general formula (I) having a polymerization initiation site in the skeleton The active site is generated in a pattern at the polymerization initiation site on the surface of the base material by contacting the compound having the above and radiating radiation in a pattern, and the group is generated using the graft polymerization from the active point as a starting point. Forming a graft polymer on the surface of the material and forming a region interacting with the electroless plating catalyst or its precursor in a pattern;
Applying an electroless plating catalyst or a precursor thereof to the region;
Performing electroless plating to form a patterned metal film;
A metal pattern forming method characterized by comprising:

In general formula (I), R ¹ represents a tetravalent organic group, R ² represents a divalent organic group, and n represents an integer of 1 or more. At least one of R ¹ and R ² is a group including a structure having a polymerization initiating ability. The compound represented by the general formula (I) comprises a tetracarboxylic dianhydride represented by the following general formula (II) and a diamine compound represented by the following general formula (III) in an organic solvent. The metal pattern forming method according to any one of claims 1 to 3, which is a compound obtained by reaction.

In the general formula (II), and the general formula (III), ^{R 1} and ^{R 2} are the same meanings as ^{R 1} and ^{R 2} in the general formula (I). The polymerization initiation site is (a) aromatic ketones, (b) onium salt compounds, (c) organic peroxides, (d) thio compounds, (e) hexaarylbiimidazole compounds, (f) ketoxime esters. It is a polymerization initiation site containing a structure derived from a compound, (g) a borate compound, (h) an azinium compound, (i) an active ester compound, (j) a compound having a carbon halogen bond, or (k) a pyridium compound. The metal pattern formation method of any one of Claims 1-4 .   The method for forming a metal pattern according to claim 3, wherein the compound having a polymerizable functional group and a functional group that interacts with an electroless plating catalyst or a precursor thereof is a polymer. Substrate comprising the polyimide is a film-like or plate-like substrate, forming a metal pattern according to any one of claims 1 to 6, characterized in that forming a metal pattern on both sides of the substrate Method. Metallic pattern forming method according to any one of claims 1 to 7, further comprising a drilling process. 9. The method of forming a metal pattern according to claim 8 , further comprising a step of conducting a conductive treatment on the hole formed by the step after the hole forming step.