JP4500993B2 - 絶縁ガス分解検出装置及び分解ガス検出方法 - Google Patents
絶縁ガス分解検出装置及び分解ガス検出方法 Download PDFInfo
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- JP4500993B2 JP4500993B2 JP2004021531A JP2004021531A JP4500993B2 JP 4500993 B2 JP4500993 B2 JP 4500993B2 JP 2004021531 A JP2004021531 A JP 2004021531A JP 2004021531 A JP2004021531 A JP 2004021531A JP 4500993 B2 JP4500993 B2 JP 4500993B2
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- 238000000354 decomposition reaction Methods 0.000 title claims description 118
- 238000001514 detection method Methods 0.000 title claims description 50
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 97
- 229910052799 carbon Inorganic materials 0.000 claims description 79
- 239000002086 nanomaterial Substances 0.000 claims description 74
- 238000009413 insulation Methods 0.000 claims description 60
- 230000008859 change Effects 0.000 claims description 56
- 230000005684 electric field Effects 0.000 claims description 35
- 239000004065 semiconductor Substances 0.000 claims description 29
- 238000005259 measurement Methods 0.000 claims description 26
- 238000006243 chemical reaction Methods 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 7
- 239000010409 thin film Substances 0.000 claims description 5
- 239000007789 gas Substances 0.000 description 381
- 239000002041 carbon nanotube Substances 0.000 description 24
- 229910021393 carbon nanotube Inorganic materials 0.000 description 19
- 238000004720 dielectrophoresis Methods 0.000 description 19
- 238000004519 manufacturing process Methods 0.000 description 15
- 230000004044 response Effects 0.000 description 14
- 230000035945 sensitivity Effects 0.000 description 14
- 230000001590 oxidative effect Effects 0.000 description 11
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 230000001603 reducing effect Effects 0.000 description 9
- 239000002904 solvent Substances 0.000 description 9
- 230000005012 migration Effects 0.000 description 8
- 238000013508 migration Methods 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 230000005856 abnormality Effects 0.000 description 7
- 239000000725 suspension Substances 0.000 description 7
- 238000003745 diagnosis Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000004364 calculation method Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 238000004088 simulation Methods 0.000 description 5
- 239000007784 solid electrolyte Substances 0.000 description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 3
- 238000001962 electrophoresis Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 229910003472 fullerene Inorganic materials 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 3
- 239000011295 pitch Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 238000011088 calibration curve Methods 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- 239000002134 carbon nanofiber Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000005868 electrolysis reaction Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910016509 CuF 2 Inorganic materials 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 244000126211 Hericium coralloides Species 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 150000001721 carbon Chemical class 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000003411 electrode reaction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002847 impedance measurement Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 244000005700 microbiome Species 0.000 description 1
- 239000002116 nanohorn Substances 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000009965 odorless effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/125—Composition of the body, e.g. the composition of its sensitive layer
- G01N27/127—Composition of the body, e.g. the composition of its sensitive layer comprising nanoparticles
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M3/00—Investigating fluid-tightness of structures
- G01M3/02—Investigating fluid-tightness of structures by using fluid or vacuum
- G01M3/04—Investigating fluid-tightness of structures by using fluid or vacuum by detecting the presence of fluid at the leakage point
- G01M3/16—Investigating fluid-tightness of structures by using fluid or vacuum by detecting the presence of fluid at the leakage point using electric detection means
- G01M3/18—Investigating fluid-tightness of structures by using fluid or vacuum by detecting the presence of fluid at the leakage point using electric detection means for pipes, cables or tubes; for pipe joints or seals; for valves; for welds; for containers, e.g. radiators
- G01M3/186—Investigating fluid-tightness of structures by using fluid or vacuum by detecting the presence of fluid at the leakage point using electric detection means for pipes, cables or tubes; for pipe joints or seals; for valves; for welds; for containers, e.g. radiators for containers, e.g. radiators
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- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- General Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Nanotechnology (AREA)
- Biochemistry (AREA)
- Electrochemistry (AREA)
- Engineering & Computer Science (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Driving Mechanisms And Operating Circuits Of Arc-Extinguishing High-Tension Switches (AREA)
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Description
1a,1b 電極
2 カーボンナノ材料
3a,3b 電界集中用縁部
4 絶縁基板
5a,5b 接続端子
6 ガス測定装置
6a ガス測定/誘電泳動制御装置
7 検出対象装置
11,21 電源部
12,22 測定部
13,23 演算制御部
14,24 表示部
15,25 メモリ部
15a 校正データ部
16,26 計時部
25a データ部
27 泳動用チャンバ
28 容器
29 ポンプ
30 攪拌装置
31,32 電磁弁
41 電極
42 高電圧電源部
Claims (5)
- 交流電圧印加時に不平等電界を発生する電界集中用縁部がそれぞれに設けられた一対の電極と、半導体カーボンナノ材料が正の誘電泳動力によって集積されかつこのときの電界に従った形態の架橋構造をなした検出部とを備え、高電圧電気機器内に所定間隔で複数配置されると共に、前記高電圧電気機器に封入された絶縁ガスが部分放電により反応を起こしたときに生成される分解ガスを前記検出部で検出し、前記絶縁ガスにSF 6 ガスが含まれかつ水分が含まれる場合には、前記半導体カーボンナノ材料への吸着で前記電極からHF又はSO 2 ガスによるインピーダンス変化の出力を行うガス絶縁機器用分解ガスセンサと、
前記ガス絶縁機器用分解ガスセンサにそれぞれ電圧を印加するための電源と、
該電圧が印加されたとき各ガス絶縁機器用分解ガスセンサのインピーダンス変化をそれぞれ検出する測定部と、
前記制御部によって、基準値以上のインピーダンス変化を出力したガス絶縁機器用分解ガスセンサの位置を基に部分放電が発生した位置を判定することを特徴とする絶縁ガス分解検出装置。 - 前記ガス絶縁機器用分解ガスセンサが前記インピーダンス変化としてコンダクタンス変化を出力することを特徴とする請求項1記載の絶縁ガス分解検出装置。
- 前記ガス絶縁機器用分解ガスセンサが前記インピーダンス変化としてキャパシタンス変化を出力することを特徴とする請求項1記載の絶縁ガス分解検出装置。
- 前記ガス絶縁機器用分解ガスセンサの前記電極が絶縁基板上に設けられた薄膜電極であって、前記電界集中用縁部が該電極のそれぞれに形成された突出部のエッジであることを特徴とする請求項1記載の絶縁ガス分解検出装置。
- 交流電圧印加時に不平等電界を発生する電界集中用縁部がそれぞれに設けられた一対の電極と、半導体カーボンナノ材料が正の誘電泳動力によって集積されかつこのときの電界に従った形態の架橋構造をなした検出部とを備え、高電圧電気機器内に所定間隔で複数配置されると共に、前記高電圧電気機器に封入された絶縁ガスが部分放電により反応を起こしたときに生成される分解ガスを前記検出部で検出し、前記絶縁ガスにSF 6 ガスが含まれかつ水分が含まれる場合には、前記半導体カーボンナノ材料への吸着で前記電極からHF又はSO 2 ガスによるインピーダンス変化の出力を行うガス絶縁機器用分解ガスセンサを高電圧電気機器の絶縁ガス中に所定間隔で複数配置し、前記ガス絶縁機器用分解ガスセンサに、前記絶縁ガスから発生した分解ガスを前記半導体カーボンナノ材料と反応させ、前記検出部のインピーダンス変化によって分解ガスを検出し、部分放電の位置を検出することを特徴とする分解ガス検出方法。
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JP2004021531A JP4500993B2 (ja) | 2004-01-29 | 2004-01-29 | 絶縁ガス分解検出装置及び分解ガス検出方法 |
PCT/JP2005/001234 WO2005073702A1 (ja) | 2004-01-29 | 2005-01-28 | ガス絶縁機器用分解ガスセンサ、絶縁ガス分解検出装置及び分解ガス検出方法 |
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JP2004021531A JP4500993B2 (ja) | 2004-01-29 | 2004-01-29 | 絶縁ガス分解検出装置及び分解ガス検出方法 |
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JP2005214788A JP2005214788A (ja) | 2005-08-11 |
JP4500993B2 true JP4500993B2 (ja) | 2010-07-14 |
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JP (1) | JP4500993B2 (ja) |
WO (1) | WO2005073702A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8052932B2 (en) * | 2006-12-22 | 2011-11-08 | Research Triangle Institute | Polymer nanofiber-based electronic nose |
JP4530034B2 (ja) * | 2007-03-30 | 2010-08-25 | 株式会社イデアルスター | ガスセンサー、そのための気体検知モジュール、およびこれらを用いた気体計測システム |
US8381587B2 (en) | 2007-05-08 | 2013-02-26 | Ideal Star Inc. | Gas sensor, gas measuring system using the gas sensor, and gas detection module for the gas sensor |
US7816681B2 (en) * | 2008-12-03 | 2010-10-19 | Electronics And Telecommunications Research Institute | Capacitive gas sensor and method of fabricating the same |
CN103946695B (zh) * | 2011-11-18 | 2016-03-30 | 三菱电机株式会社 | 水分浓度检测装置 |
CN112198238B (zh) * | 2020-08-25 | 2021-12-28 | 西安交通大学 | 一种检测放电工况下断路器中气体分解产物的方法及系统 |
CN116184140A (zh) * | 2023-04-21 | 2023-05-30 | 北京西能电子科技发展有限公司 | 一种适用于gis设备缺陷检测用多功能单体传感器 |
CN118329981A (zh) * | 2024-06-13 | 2024-07-12 | 南方电网数字电网研究院股份有限公司 | 绝缘气体检测装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2777274B2 (ja) * | 1990-08-17 | 1998-07-16 | 株式会社東芝 | ガス絶縁電気機器 |
JP2825634B2 (ja) * | 1990-10-03 | 1998-11-18 | 三菱電機株式会社 | ガス絶縁電気機器の内部異常検出装置 |
JP2003227878A (ja) * | 2002-02-05 | 2003-08-15 | Osaka Gas Co Ltd | 物体探査方法 |
JP2003227806A (ja) * | 2002-02-01 | 2003-08-15 | Kansai Research Institute | 気体物質検知方法 |
Family Cites Families (1)
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JP3924472B2 (ja) * | 2002-02-05 | 2007-06-06 | 株式会社ジェイテクト | カーボンナノチューブを用いたセンサ |
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2004
- 2004-01-29 JP JP2004021531A patent/JP4500993B2/ja not_active Expired - Lifetime
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- 2005-01-28 WO PCT/JP2005/001234 patent/WO2005073702A1/ja active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2777274B2 (ja) * | 1990-08-17 | 1998-07-16 | 株式会社東芝 | ガス絶縁電気機器 |
JP2825634B2 (ja) * | 1990-10-03 | 1998-11-18 | 三菱電機株式会社 | ガス絶縁電気機器の内部異常検出装置 |
JP2003227806A (ja) * | 2002-02-01 | 2003-08-15 | Kansai Research Institute | 気体物質検知方法 |
JP2003227878A (ja) * | 2002-02-05 | 2003-08-15 | Osaka Gas Co Ltd | 物体探査方法 |
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WO2005073702A1 (ja) | 2005-08-11 |
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