JP4492204B2 - Method for manufacturing power conversion device - Google Patents

Description

  The present invention relates to a method for manufacturing a power conversion device in which a power bus bar as an electrode plate is melt-bonded to a power terminal of a power semiconductor module.

Conventionally, a power conversion circuit such as a DC-DC converter circuit or an inverter circuit is sometimes used to generate a drive current for energizing an AC motor that is a power source of an electric vehicle or a hybrid vehicle. Generally, in an electric vehicle, a hybrid vehicle, and the like, it is necessary to obtain a large driving torque from the AC motor, and thus it is necessary to supply a large driving current.
Therefore, in the power conversion circuit that generates the drive current to be supplied to the AC motor, heat generated from the power semiconductor module including the power semiconductor element such as IGBT constituting the power conversion circuit tends to increase.

Therefore, a large number of flat cooling tubes are arranged between a pair of headers that supply and discharge the cooling medium (refrigerant) so that the plurality of power semiconductor modules constituting the power conversion circuit can be cooled with high uniformity. A cooling tube parallel type power conversion device in which a power semiconductor module is sandwiched between flat cooling tubes has been proposed (see, for example, Patent Document 1).
In the power conversion device configured as described above, in order to energize the input / output currents of the plurality of power semiconductor modules together, the power terminals of each power semiconductor module are connected to a common power bus bar or the like, for example. There is a case where it is electrically connected to the electrode plate.

JP 2002-26215 A

  However, the conventional power conversion device has the following problems. That is, in a power bus bar through which a large current is passed, there is a possibility that stress such as heat or vibration may repeatedly act on the joint portion with the power terminal. Therefore, in the said power converter device, it is necessary to join a power bus bar and a power terminal with high reliability.

  The present invention has been made in view of the above-described conventional problems, and an object of the present invention is to provide a method for efficiently manufacturing an excellent quality power converter having high joint reliability between a power bus bar and a power terminal. .

The present invention provides a semiconductor device in which a flat tube-shaped cooling tube for flowing a refrigerant, a power terminal for supplying a control current, and a flat power semiconductor module having a plurality of control terminals for receiving control signals are stacked. A unit laminating step for producing a laminated unit;
A power terminal connecting step of melting and joining a power bus bar to the power terminal of the semiconductor laminated unit;
A control terminal connecting step of soldering the control terminals of the semiconductor multi-layer unit to a predetermined connection location on the control board on which the control circuit element is mounted after the power terminal connecting step. It exists in the manufacturing method of a power converter device (Claim 1).

  In the method for manufacturing a power conversion device of the present invention, a power terminal connection step of melting and joining the power bus bar to the power terminal is performed on the semiconductor stacked unit manufactured by the unit stacking step, and then the control board A control terminal connection process is performed in which the control terminals are soldered to predetermined connection locations.

In the manufacturing method of the power converter, the control terminal connection step is performed after the power terminal connection step. Therefore, there is no possibility that high energy such as a large current and a high voltage at the time of melt-bonding the power bus bar will adversely affect the control board. Therefore, there is no possibility of causing an electrical trouble in the control board.
Therefore, the power converter manufactured by the manufacturing method of the present invention has excellent quality with few electrical initial troubles.

  Further, as in the method for manufacturing the power conversion device, after the semiconductor stacked unit is formed by the unit stacking step, the power bus bar and the control board are assembled, so that the power conversion device is very efficiently produced. Can be manufactured.

  As mentioned above, the manufacturing method of the power converter device of this invention can manufacture the power converter device of the outstanding quality efficiently.

In the present invention, in the unit lamination step, the semiconductor lamination unit is produced by laminating two or more module arrangement layers in which one or more of the power semiconductor modules are arranged in parallel. (Claim 2).
In this case, since the number of the power semiconductor modules constituting the semiconductor laminated unit increases, the effect of the present invention is particularly effective. Further, in the above case, the current as the control target to be passed through the power bus bar is increased, and therefore, the necessity to melt and bond the power bus bar and the power terminal is increased. The effect is particularly effective.

In the power terminal connecting step, it is preferable that the power terminals are melt-bonded in a state where a protective member is attached to each control terminal.
Moreover, it is preferable that the said protection member is a short circuit member which short-circuits between each said control terminal (Claim 4).

In the unit stacking step, a plurality of the power semiconductor modules are stacked, and in the power terminal connecting step, the plurality of short-circuit members that are electrically insulated from each other are mounted for each power semiconductor module. It is preferable to perform fusion bonding of the power terminals.
Each of the short-circuit members is electrically independent, and is electrically insulated from other short-circuit members. Here, the short-circuit member is electrically independent means that the short-circuit member is not in electrical contact with any of the semiconductor lamination unit, the welding apparatus for performing the power terminal connection step, and the like. Means state. For example, if the set of control terminals is electrically insulated from the ground point of a melting apparatus for performing melt bonding, a high voltage is applied to the ground point via the set of control terminals. Or a large current can be suppressed. Moreover, if the electrical insulation state between each short-circuit member and other short-circuit members is ensured, there is a risk that a high voltage or a large current for melting will be energized via a plurality of power semiconductor modules. Can be suppressed.

  As described above, the power terminals while short-circuiting the control terminals of the set of control terminals using the short-circuit member and ensuring electrical insulation between the short-circuit members and the other short-circuit members. If the connection process is performed, the possibility that the power semiconductor module is damaged by high energy such as high voltage or large current during welding can be reduced. Then, after performing the power terminal connection step as described above, if the control terminal is soldered to a predetermined connection location of the control board, the power conversion device can be produced with high production efficiency by suppressing initial failure of the power semiconductor module. Can be manufactured.

Moreover, it is preferable that only the surface which contacts the said control terminal exhibits the electrical conductivity, and the other outer peripheral surface exhibits the electrical insulation of the said short circuit member.
In this case, the electrical insulation state can be ensured with high reliability for the set of control terminals that are short-circuited to each other.
Further, as the short-circuit member, a plurality of insertion holes for inserting the control terminals are provided, and the inner peripheral surface of each insertion hole is formed so as to exhibit electrical conductivity, and the other outer peripheral surface is formed. It is good to form so that electrical insulation may be exhibited.
In this case, the short-circuit member can be held with high reliability with respect to the set of control terminals. Furthermore, if the said short circuit member provided with electrical insulation is used for an outer peripheral surface, the electrical insulation state can be ensured with high reliability by covering the set of control terminals that are short-circuited to each other.

In the unit stacking step, the power semiconductor module and the cooling tube extend the power terminal to the first side surface of the semiconductor stacked unit, and the first opposite to the first side surface of the semiconductor stacked unit. The control terminal is extended and laminated on two side surfaces,
In the power terminal connecting step, it is preferable that the power terminals are melt-bonded with the power terminals facing upward.

In the power terminal connecting step, the power terminal and the power bus bar can be melt-bonded by TIG welding.
When fusion bonding of the power terminal and the power bus bar is performed by TIG welding, although both can be bonded with high reliability, the voltage applied at the time of fusion bonding or the current to be energized increases. Therefore, since there is a high risk of causing electrical troubles in the power semiconductor module, the method for manufacturing a power conversion device of the present invention is particularly effective.
For fusion bonding of power terminals, in addition to electrical welding methods such as arc welding and resistance welding, high strength that can withstand large currents between power terminals and bus bars, such as laser welding, electron beam welding, or flame welding. Can be used.

Example 1
The manufacturing method of the power converter device 1 of this example is demonstrated using FIGS.
As shown in FIGS. 1 to 3, the manufacturing method of the power conversion apparatus 1 of this example is a set of controls including a pair of power terminals 150 for passing a control current and an input current and a plurality of terminals for taking in control signals. Electric power that is electrically connected to the power terminal 150 and the semiconductor stacked unit 2 in which the flat power semiconductor module 10 having the terminal 160 and the flat tube-shaped cooling tube 20 that flows the refrigerant are alternately stacked. In this method, the power conversion device 1 including the bus bar 30 and the control board 40 electrically connected to the control terminal 160 is manufactured.

In this manufacturing method, a unit stacking process for stacking the cooling tube 20 and the power semiconductor module 10 (FIGS. 4 and 5) to produce the semiconductor stack unit 2 (see FIGS. 6 and 7), and the semiconductor stack unit After performing the power terminal connection step of melting and joining the power bus bar 30 to the power terminal 150 of the second power terminal 150, the control terminals 160 of the semiconductor stacked unit 2 are connected to predetermined connection locations on the control board 40. A control terminal connecting process for soldering is performed.
This content will be described in detail below.

  First, the power converter device 1 of this example will be described. As shown in FIGS. 1 to 3, the power conversion device 1 is a device for generating a drive current for energizing a travel motor (not shown) for an electric vehicle, for example. And this power converter device 1 has the power circuit etc. which are not shown in figure comprised from a capacitor | condenser, a reactor, etc. other than the semiconductor lamination | stacking unit 2 which assembled | attached the control board 40 and the electric power bus bar 30 as mentioned above.

  As described above, in the power conversion device 1, the power terminal 150 protrudes from the side surface that contacts the surface 201 of the semiconductor multilayer unit 2 as shown in FIGS. 1 to 3. And the control terminal 160 protrudes on the side surface which contacts the back surface 202 of the semiconductor laminated unit 2. As shown in FIG. 3, a set of power bus bars 30 is disposed on the side surface corresponding to the surface 201, and each power bus bar 30 is melt-bonded to a predetermined power terminal 150. The plurality of power bus bars 30 are arranged in parallel with the surface 201 as one main plane of the semiconductor multilayer unit 2 that has a square box-like appearance. A plurality of power terminals 150 extend from the surface 201 of the semiconductor multilayer unit 2 in a direction perpendicular to the surface. The plurality of power terminals 150 are arranged along the stacking direction of the power semiconductor module 10 and the cooling tube 20 in the semiconductor stacked unit 2 to form a power terminal array. Moreover, the plurality of power terminals 150 form a plurality of columns. In this embodiment, four power terminal rows are formed. Each of the plurality of power bus bars 30 is formed in a bar shape extending in parallel with the plurality of power terminal rows. From each of the plurality of power bus bars 30, a plurality of terminal portions extend toward the power terminals. Each terminal is formed with a recess or a hole as a connecting portion for positioning the power terminal.

  Each of the plurality of power terminals 150 has a flat plate shape. The plurality of power terminals 150 have a flat surface extending in a plane direction perpendicular to the stacking direction of the power semiconductor module 10 and the cooling tube 20 in the semiconductor stacked unit 2. In other words, the plurality of power terminals 150 have a flat surface extending in parallel with the flat surface direction of the flat power semiconductor module 10. A plurality of power terminals 150 belonging to one power terminal row are arranged in parallel to each other. Further, as a result of the plurality of power semiconductor modules 10 being arranged in parallel with one cooling tube 20, the plurality of power terminals 150 belonging to these power semiconductor modules 10 are arranged in a straight line with respect to a direction orthogonal to the stacking direction. It has been.

  In this embodiment, three power bus bars 30 are provided. The central power bus bar 30 disposed between the power terminal rows includes a plurality of terminals on both sides thereof. The left and right power bus bars 30 arranged further outside the end power terminal row include a plurality of terminals on one side. The plurality of power bus bars 30 are assembled in a sawtooth shape to constitute a bus bar assembly. The bus bar assembly extends over a range covering all of the plurality of power terminals 150 extending from the surface 201 of the semiconductor stacked unit 2.

Each power bus bar 30 is a copper plate-like member formed with a plurality of terminal holes 300 for inserting power terminals 150 to be melt-bonded. In this example, the terminal hole 300 is formed by a slit-shaped notch that opens at the side end.
Each of the plurality of control terminals 160 has a flat plate shape. The plurality of control terminals 160 have a flat surface extending in a plane direction orthogonal to the stacking direction of the power semiconductor module 10 and the cooling tube 20 in the semiconductor stacked unit 2. That is, the plurality of control terminals 160 have a plane that extends in parallel with the plane direction as a flat plate of the flat-plate power semiconductor module 10. All the control terminals 160 are arranged in parallel with each other. Since the plurality of power semiconductor modules 10 are alternately stacked with the cooling tubes 20, the plurality of control terminals 160 are arranged in a plurality of rows extending along the stacking direction. Further, as a result of the plurality of power semiconductor modules 10 being arranged in parallel with one cooling tube 20, the plurality of control terminals 160 belonging to these power semiconductor modules 10 are arranged in a straight line with respect to the direction orthogonal to the stacking direction. It has been.

Further, the control board 40 is disposed on the side surface corresponding to the back surface 202. On the control board 40, circuit elements such as resistors and ICs constituting a control circuit for generating control signals for the plurality of power semiconductor modules 10 are mounted. The control board 40 is a single circuit board, and all of the plurality of control terminals 160 extending from the semiconductor stacked unit 2 are connected thereto. The control board 40 is arranged in parallel with the back surface 202 as the main plane on the opposite side of the semiconductor laminated unit 2 that has a square box-like appearance. The control board 40 extends over a range covering all of the plurality of control terminals 160 extending from the back surface 202. The control board 40 can be provided by a plurality of circuit boards. The control board 40 is formed with through holes into which the control terminals 160 are inserted, and predetermined control terminals 160 are inserted into the through holes and soldered.
The power conversion apparatus 1 of this embodiment is mounted on a vehicle, for example, in a state of use, with the semiconductor laminated unit 2 having its main plane direction horizontal. The power conversion device 1 can be placed in a use state by disposing the control board 40 on the upper side in the gravity direction of the semiconductor lamination unit 2 and arranging the plurality of bus bars 30 on the lower side in the gravity direction of the semiconductor lamination unit 2.

  As shown in FIGS. 4 and 5, the power semiconductor module 10 of this example includes an IGBT element 11 that is a power semiconductor element and a flywheel diode element 12 that is necessary for smoothing the rotation of the motor. It is a module arranged between a pair of facing electrode heat sinks 15. The power semiconductor module 10 is formed by integrally molding the pair of electrode heat dissipation plates 15 and the elements 11 and 12 using a mold resin 13. In this example, resin molding is performed so that the electrode heat dissipation plate 15 is exposed on both sides of the power semiconductor module 10, and the exposed electrode heat dissipation plate 15 is used as a heat dissipation surface.

As shown in the figure, the power semiconductor module 10 includes, as external terminals, a power terminal 150 formed integrally with each electrode heat dissipation plate 15 and a control terminal 160 embedded and held in the mold resin 13. It has. In the power semiconductor module 10 of this example, the power terminal 150 and the control terminal 160 are arranged to face each other in a plane parallel to the electrode heat dissipation plate 15.
Therefore, as shown in FIGS. 6 and 7, in the semiconductor laminated unit 2 of this example using the power semiconductor module 10, the power terminal 150 protrudes on the front surface 201 side and the control terminal 160 on the back surface 202 side. It protrudes.

  As shown in FIGS. 6 and 7, the semiconductor laminated unit 2 has a multilayer laminated structure in which flat tube-shaped cooling tubes 20 forming a refrigerant flow path and flat power semiconductor modules 10 are alternately laminated. belongs to. In the semiconductor laminated unit 2 of this example, two power semiconductor modules 10 are arranged in parallel in the gap between the cooling tubes 20 laminated side by side.

  The cooling tube 20 is a hollow tube (see FIG. 1) having a flat tube shape having a refrigerant flow path therein. In this example, the cooling tube 20 is formed of an extruded material of an aluminum alloy material. As shown in FIG. 6, the cooling tube 20 is formed by drilling through holes (not shown) for connecting the header tube 240 to the flat surfaces 210 near both ends thereof.

  As shown in FIGS. 6 and 7, the semiconductor laminated unit 2 of this example includes a header section 241 for supply and a header section 242 for discharge as a refrigerant header for supplying and discharging the refrigerant. In this example, the above-mentioned bellows-shaped header pipe 240 made of an aluminum material that can be expanded and contracted in the length direction is arranged in the gap between adjacent cooling tubes 20, and each header section is formed by a plurality of header pipes 240 arranged substantially on the same straight line. 241 and 242 are formed. Each header tube 240 is connected to each cooling tube 20 by brazing and joining both end portions inserted into the through holes of the cooling tube 20. In addition, the edge part of each cooling tube 20 is sealed using the sealing member 23 which exhibits cap shape.

  In addition, the power converter device 1 of this example has a support structure (not shown) having a holding plate and a clamping plate facing each other. This support structure is configured to hold the semiconductor stacked unit 2 in a state where a load in the stacking direction is applied between the holding plate and the pinching plate. When a load in the stacking direction is applied to the semiconductor stacked unit 2 as described above, an appropriate contact load can be applied between the cooling tube 20 and the power semiconductor module 10. And a contact area can be ensured between the cooling tube 20 and the semiconductor module 10 for electric power, and the heat conduction between both can be accelerated | stimulated.

  Further, in the semiconductor laminated unit 2 of this example, a ceramic plate and a silicon grease layer (not shown) are arranged between the cooling tube 20 and the power semiconductor module 10 which are in close contact with each other. This ceramic plate is effective for ensuring electrical insulation between the two, and the silicon grease layer is useful for improving the thermal conductivity.

  Therefore, in the power conversion device 1 of this example, heat transfer between the power semiconductor module 10 and the cooling tube 20 is facilitated, and the power semiconductor module 10 can be efficiently cooled. In particular, since the power conversion device 1 of this example has a structure in which the cooling tubes 20 are in contact with both sides of the power semiconductor module 10, the performance of cooling the power semiconductor module 10 is very high.

Next, a method for manufacturing the power conversion device 1 will be described.
First, as shown in FIGS. 6 and 7, the unit stacking step for manufacturing the semiconductor stacked unit 2 by stacking the cooling tube 20 and the power semiconductor module 10 will be briefly described.
In this step, the cooling tube 20 is assembled in a ladder shape using the header tube 240 in advance, and the sealing members 23 are attached to both ends of each cooling tube 20. Then, the header tube 240 and the sealing member 23 are brazed to the cooling tube 20. After that, as shown in the figure, when placing the power semiconductor module 10 in the gap between the adjacent cooling tubes 20, first, the bellows-like header pipe 240 forming the header portions 241 and 242 is first extended in the stacking direction. The power semiconductor module 10 is placed between the cooling tubes 20 with the gap widened. Thereafter, the cooling tube 20 and the power semiconductor module 10 are brought into close contact with each other by applying a compressive load in the stacking direction to shrink the header tube 240 in the stacking direction.

And about the semiconductor lamination unit 2 produced by the said unit lamination process, as shown in FIG.8 and FIG.9, the said power terminal connection process is implemented. In this step, the power bus bar 30 is melt-bonded to the power terminal 150 of each power semiconductor module 10 constituting the semiconductor stacked unit 2.
In particular, in the power terminal connection step of this example, the control terminals 160 of the semiconductor laminated unit 2 are electrically short-circuited with each other for each power semiconductor module 10 and the control terminals 160 that are short-circuited with each other are used for power. The fusion bonding of the power terminal 150 and the power bus bar 30 is sequentially performed while securing an electrical insulation state for each semiconductor module 10.

In the power terminal connection process of this example, first, as shown in FIGS. 8 and 9, each power terminal 150 is inserted into each terminal hole 300 and the power bus bar 30 to be melt bonded is attached to the semiconductor laminated unit 2.
On the other hand, on the back surface 202 side where the control terminal 160 protrudes in the semiconductor laminated unit 2, the short-circuit member 5 is attached to the set of five control terminals 160 of each power semiconductor module 10 for all the power semiconductor modules 10. . The short-circuit member 5 can function as a protective member that mechanically and further electrically protects the control terminal 160 while the power terminal 150 is melt-bonded. In particular, in this example, each short-circuit member 5 mounted on each power semiconductor module 10 is disposed so as not to contact any other short-circuit member 5, the cooling tube 20, or any device that performs melt bonding. The electrical insulation state can be ensured.

  As shown in FIG. 10, the short-circuit member 5 of this example is a sponge-like member made of conductive urethane, having conductivity, and exhibiting high flexibility. The short-circuit member 5 of this example is formed with five insertion holes 50 for inserting the control terminals 160. According to the sponge-like short-circuit member 5, the control terminals 160 can be flexibly deformed so as to be inserted into the insertion holes 50. Therefore, the short-circuit member 5 allows each control terminal to flexibly absorb the size of the interval between the control terminals 160 and the length of the projecting length of the control terminal 160 that may occur as individual differences between the power semiconductor modules 10. The electrical connection state with 160 can be ensured with high reliability. In addition, as the said short circuit member 5, it may replace with the sponge-like thing of this example, and may be a metal scoop-like thing formed by rounding a metal wire.

  As shown in FIGS. 8 and 9, the power bus bars 30 and the short-circuit members 5 to be melt-bonded are attached to the semiconductor laminated unit 2, and the power terminals 150 protruding from the terminal holes 300 of the power bus bar 30 are sequentially connected. Melt and join. Here, the welding bus arc 30 is welded to the upper end surface of the power terminal 150 protruding from each terminal hole 300 as shown in FIG. 8 in a state where the electric power bus bar 30 to be melt-bonded is electrically connected to a ground point 333 of a welding apparatus (not shown). Supply. In this example, fusion bonding by TIG welding was performed.

  In this way, each power terminal 150 protruding from the terminal hole 300 is melt-bonded in order, and each power bus bar 30 and the power terminal 150 are melt-bonded while switching the power bus bar 30 connected to the ground point 333 of the welding apparatus. . Thereafter, the short-circuit member 5 held on the control terminal 160 of each power semiconductor module 10 is removed, and the power terminal connection process is completed (see FIG. 11).

  In this example, each power bus bar 30 and power terminal 150 are melt-bonded for each power terminal 150, but instead, all power terminals 150 to be melt-bonded to each power bus bar 30 are connected simultaneously. It is also possible to perform melt bonding. Further, in this example, the power bus bars 30 are melt-bonded in order, but all the power terminals 150 can be melt-bonded to all the power bus bars 30 at the same time.

  After the power terminal connection step, the control terminal connection step is performed. In this step, first, the control board 40 is held in the semiconductor multilayer unit 2 by inserting the control terminal 160 into each through hole of the control board 40 (see FIG. 1) in which the through hole is formed. Then, each control terminal 160 is soldered and joined in a state where the control substrate 40 is held in the semiconductor multilayer unit 2.

As mentioned above, in the manufacturing method of the power converter device 1 of this example, after implementing the said power terminal connection process, the said control terminal connection process is implemented. Therefore, there is no possibility that high energy such as a welding voltage or a welding current when the power bus bar 30 is melt-bonded will adversely affect the control board 40. Therefore, there is no possibility of causing an electrical trouble in the control board 40.
Therefore, the power conversion device 1 manufactured by the manufacturing method of the present invention has excellent quality with few electrical initial troubles. Moreover, if the power bus bar 30 and the control board 40 are assembled after the semiconductor lamination unit 2 is formed by the unit lamination process as in the manufacturing method of the power conversion apparatus 1 described above, the power conversion apparatus 1 is very efficiently produced. Can be manufactured.

  Furthermore, in the manufacturing method of this example, when the power terminal 150 and the power bus bar 30 are melt-bonded in the power terminal connection step, all the power semiconductor modules 10 constituting the semiconductor stacked unit 2 are connected to each power semiconductor. For each module 10, the set of control terminals 160 are short-circuited to each other, and the set of control terminals 160 short-circuited to each other is electrically insulated for each power semiconductor module 10.

  For this reason, in the power terminal connection process of this example, there is little possibility that a high voltage or a large current supplied to each power terminal 150 during melt bonding is applied from the power terminal 150 to the control terminal 160 or energized. Therefore, in the power terminal connection process of this example, when the power terminal 150 is melt-bonded, there is little risk of causing trouble in the internal circuit of the power semiconductor module 10.

Then, after the power terminal 150 is melt-bonded to the power bus bar 30 while electrically protecting the power semiconductor module 10 as described above, the control terminal 160 of the power semiconductor module 10 is solder-bonded to the control board 40. The power conversion apparatus 1 can be manufactured with high production efficiency while suppressing the possibility of trouble occurring in the semiconductor module 10 for use.
Therefore, the power conversion device 1 manufactured in this example can be manufactured efficiently, has low cost, and has excellent quality.

Depending on the electric circuit configuration inside the power semiconductor module 10, the power terminal connection step may be performed without holding the short-circuit member 5 on a set of control terminals 160, and then the control terminal connection step may be performed. it can.
In this case, the power terminal connection process can be performed without the trouble of attaching the short-circuit member 5 to the semiconductor stacked unit 2 formed by the unit stacking process, and the power conversion device 1 can be manufactured with high production efficiency. Examples of the power semiconductor module 10 that can omit the short-circuit member 5 include those that are less likely to be destroyed by a high voltage or a large current in the power terminal connection process due to an internal circuit configuration.

(Example 2)
FIG. 12 shows an embodiment in which the power bus bar 30 and the power terminal 150 are melt-bonded without short-circuiting the pair of control terminals 160 of the power semiconductor module 10.
In the second embodiment, as shown in FIG. 12, the welding arc is supplied to the power terminal 150 without short-circuiting the control terminals 160 of the respective power semiconductor modules 10. After all the power terminals 150 and the power bus bar 30 are fused and connected in this manner, all the control terminals 160 and the control board 40 are soldered on the back surface side. Also in the second embodiment, high energy such as high voltage, large current, and high temperature required for fusion connection of the power terminal 150 can be prevented from adversely affecting the control board 40 on which the control circuit is mounted. However, in the manufacturing method of the second embodiment, depending on the internal structure of the power semiconductor module 10, an excessive potential difference is generated between the control terminals 160 extended from the internal circuit that controls the power semiconductor element 10. High energy at the time of fusion bonding of the power terminal 150 may adversely affect the internal circuit of the power semiconductor module 10.

  In particular, when the electric contact area between the power terminal 150 to be melt-bonded and the power bus bar 30 is insufficient, such a trouble is likely to occur. In order to prevent such problems caused by the power semiconductor module 10, it is desirable to take measures to make the internal structure of the power semiconductor module 10 to withstand the fusion bonding method of the power terminal 150 in advance. Moreover, you may take a countermeasure like Example 1. FIG. If the control terminal 160 of the power semiconductor module 10 is electrically short-circuited to each other via the short-circuit member 5 as in the first embodiment (see FIGS. 8 and 9), the internal circuit and the like are damaged. It can be prevented beforehand.

  FIG. 13 shows a state where any one of the control terminals 160 of the power semiconductor module 10 to be melt-bonded is electrically short-circuited with the control terminal 160 of the power semiconductor module 10 that has already been melt-bonded. Shows the state of going. As shown in FIG. 13, the control terminal 160 of the power semiconductor module 10 that performs fusion bonding and the control terminal 160 of the power semiconductor module 10 that has the fusion bonded power terminal 150 are electrically short-circuited (for example, a short-circuit path). A case where A is formed will be described. In this case, a large current caused by the welding arc supplied to the power terminal 150 to be melt-bonded passes through the control terminal 160 of the power semiconductor module 10 and further passes through the power-bonded power semiconductor module 10 ( In the figure, for example, an electrical path indicated by path A <b> 1) may be energized toward the ground point 333 of the welding apparatus. Therefore, a large current is passed through the internal circuit of the power semiconductor module 10 to be melt-bonded and the possibility of damage is high.

  In particular, when the electric contact area between the power terminal 150 to be melt-bonded and the power bus bar 30 is insufficient, such a trouble is likely to occur. Therefore, it is desirable to perform fusion bonding of the power terminal 150 in a state where an insulating member is arranged so that the energization path as described above is not formed. In addition, if the electrically insulated state of the set of control terminals 160 of the power semiconductor module 10 to be melt-bonded as in the first embodiment is secured, the power semiconductor module 10 that has already been bonded is used. There is little risk of energizing a large current.

  FIG. 14 shows a state in which the power bus bar 30 and the power terminal 150 are melt-bonded in a state where any one of the control terminals 160 of the power semiconductor module 10 is electrically short-circuited to the ground point 333 of the welding apparatus. Indicates. As shown in FIG. 14, the control terminal 160 of the power semiconductor module 10 that performs fusion bonding is electrically connected to the ground point 333 of the welding apparatus via the cooling tube 20, the structural member of the power conversion device 1, and the like. The case where it is done (for example, the case where the short circuit path B is formed) will be described. In this case, a large current caused by the welding arc supplied to the power terminal 150 to be melt-bonded passes through the control terminal 160 of the power semiconductor module 10 (for example, an electrical path indicated by path B1 in the figure). Then, power is supplied toward the ground point 333 of the welding apparatus. Therefore, a large current is passed through the internal circuit of the power semiconductor module 10 to be melt-bonded and the possibility of damage is high.

  In particular, when the electric contact area between the power terminal 150 to be melt-bonded and the power bus bar 30 is insufficient, such a trouble is likely to occur. Therefore, it is desirable to perform fusion bonding of the power terminal 150 in a state where an insulating member is arranged so that the energization path as described above is not formed. If the electrical insulation state of a set of control terminals 160 of the power semiconductor module 10 to be melt-bonded as in the first embodiment is sufficiently secured, the melt-bonded power semiconductor module 10 is interposed. Therefore, there is little possibility that a large current is applied.

Sectional drawing of the power converter device in Example 1. FIG. The top view of the power converter device in Example 1. FIG. The front view of the power converter device in Example 1. FIG. FIG. 3 is a top view illustrating the semiconductor module according to the first embodiment. Sectional drawing which shows the cross-section of the semiconductor module in Example 1 (AA arrow sectional drawing in FIG. 4). The side view which shows the side surface by the side in which the power terminal of the semiconductor lamination | stacking unit protrudes in Example 1. FIG. The perspective view which looked at the side surface by which the control terminal of the semiconductor lamination | stacking unit protrudes from diagonally upward in Example 1. FIG. The side view explaining a mode that an electric power terminal connection process is implemented. Sectional drawing explaining a mode that an electric power terminal connection process is implemented. FIG. 3 is a perspective view showing a short-circuit member in Example 1. Sectional drawing which shows the semiconductor lamination | stacking unit which melted and joined the electric power bus bar in Example 1. FIG. The side view which shows a mode that the power terminal and electric power bus bar in Example 2 are melt-joined. Sectional drawing which shows a mode that the electric power terminal and electric power bus bar in Example 2 are melt-joined. The side view which shows a mode that the power terminal and electric power bus bar in Example 2 are melt-joined.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Power converter 10 Power semiconductor module 11 IGBT element 12 Flywheel diode element 150 Power terminal 160 Control terminal 2 Semiconductor laminated unit 20 Cooling tube 23 Sealing member 240 Header pipe 241 and 242 Header part 30 Power bus bar 300 Terminal hole 40 Control Substrate 5 Short-circuit member 50 Insertion hole

Claims (6)

The above-mentioned semiconductor laminated unit is manufactured by laminating a flat tube-shaped cooling tube through which a refrigerant flows, a power terminal for supplying a control current, and a flat-plate power semiconductor module having a plurality of control terminals for receiving control signals. Unit stacking process,
A power terminal connecting step of melting and joining a power bus bar to the power terminal of the semiconductor laminated unit;
A control terminal connecting step of soldering the control terminals of the semiconductor multi-layer unit to a predetermined connection location on the control board on which the control circuit element is mounted after the power terminal connecting step. A method for manufacturing a power converter.   In claim 1, in the unit stacking step, the semiconductor stack unit is manufactured by stacking two or more module arrangement layers in which one or more of the power semiconductor modules are arranged in parallel. The manufacturing method of the power converter device characterized by these.   3. The method of manufacturing a power converter according to claim 1, wherein, in the power terminal connecting step, the power terminals are melt-bonded in a state where a protective member is attached to each control terminal.   4. The method for manufacturing a power conversion device according to claim 3, wherein the protection member is a short-circuit member that short-circuits between the control terminals.   5. The unit laminating step according to claim 4, wherein the plurality of power semiconductor modules are stacked, and in the power terminal connecting step, the plurality of short-circuit members that are electrically insulated from each other are attached to each power semiconductor module. A method for manufacturing a power conversion device, wherein the power terminals are melted and joined in a state where the power is applied. 6. The unit stacking step according to claim 1, wherein in the unit stacking step, the power semiconductor module and the cooling tube extend the power terminal to a first side surface of the semiconductor stack unit, and The control terminal is extended and laminated on the second side opposite to the first side,
In the power terminal connecting step, the power terminal is melt-bonded in a state where the power terminal is directed upward.

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