JP4490765B2 - Direct heat-electric converter - Google Patents

Description

  The present invention relates to a thermal-electrical direct conversion device, and more particularly to a thermal-electrical direct conversion device capable of suppressing the progress of deterioration due to oxidation or the like of components of the conversion device and maintaining good conversion efficiency over a long period of time.

In recent years, the amount of energy consumed by mankind has rapidly increased at an unprecedented rate. As a result, the problem of global warming due to greenhouse gases such as carbon dioxide (CO ₂ ) has emerged, and the global environment is preserved. Therefore, development of an energy source capable of suppressing CO ₂ generation as much as possible is craved all over the world. Under such circumstances, mainly from the viewpoint of energy saving, the use of large-scale waste heat has been progressing conventionally, and at present, the reuse of medium-scale waste heat has been attracting attention.

  However, with regard to medium- and small-scale waste heat, even if the quality of the waste heat is high, the amount of heat itself is relatively small. For example, in a power generator for large-scale waste heat such as a steam turbine, the amount of heat is large. As a result, the power generation efficiency is extremely low, and there is a problem that the amount of electricity corresponding to the modification of existing facilities and the maintenance / repair cost cannot be obtained.

  In addition, due to the small amount of heat, the use of heat, such as the use of hot water, is often forgotten, and the use of medium- and small-scale waste heat is difficult to progress worldwide. Therefore, the development and practical application of a direct heat-electricity conversion device that can convert electric energy from the energy of waste heat of medium and small scales with a simple and small device system is awaited.

  In order to cope with such technical demands, development of a direct thermal-electric conversion device that converts thermal energy directly into electrical energy using a semiconductor has been in progress (see, for example, Patent Document 1 and Non-Patent Document 1). ).

  In general, this type of direct heat-electric conversion device is composed of a combination of p-type and n-type direct heat-electric conversion semiconductors (thermoconduction elements) that use thermoelectric effects such as the Thomson effect, Peltier effect, and Seebeck effect. Is done. A general structure is shown in FIG. In other words, the conventional thermo-electric direct conversion device 1 includes a p-type thermo-electric direct conversion semiconductor chip (p-type semiconductor) 2 and an n-type thermo-electric direct conversion semiconductor chip (n-type semiconductor) 3 with a high-temperature side electrode 5. And a low temperature side insulating plate (low temperature side substrate) 8 having a low temperature side electrode 6 and a high temperature side insulating plate (high temperature side substrate) 7 having a structure. The p-type heat-electric direct conversion semiconductor chip 2 and the n-type heat-electric direct conversion semiconductor chip 3 form a heat-electric direct conversion semiconductor pair 4 (semiconductor pair), and the entire conversion device is electrically and thermally. Many thermo-electric direct conversion semiconductor pairs are connected.

  The p-type heat-electric direct conversion semiconductor chip 2 and the n-type heat-electric direct conversion semiconductor chip 3 are joined via the high-temperature side electrode 5 and the high-temperature side electrode-semiconductor chip junction 11, and further p-type heat-electric direct The conversion semiconductor chip 2 and the n-type thermal-electrical direct conversion semiconductor chip 3 are joined via the low temperature side electrode 6 and the low temperature side electrode-semiconductor chip junction 12.

  In the heat-electrical direct conversion device 1 configured as described above, when the heat flow 13 is supplied to the high temperature side electrode 5, the heat is directly converted to the p-type heat-electricity via the high temperature side electrode-semiconductor chip junction 11. The semiconductor carrier 2 and the n-type direct thermal-electric conversion semiconductor chip 3 are transferred to the semiconductor chip 2 and 3 and pass through the semiconductor chip 2, 3. The holes 16 and the electrons 17 which are semiconductor carriers inside the n-type heat-electric direct conversion semiconductor chip 3 are transferred to the p-type heat-electric direct conversion semiconductor chip 2 or the n-type heat-electric direct conversion semiconductor chip 3 on the low temperature side. It moves toward the low temperature side electrode 6 joined via the electrode-semiconductor chip junction 12.

  On the other hand, the heat flow 14 that passes through the semiconductor chips 2 and 3 becomes a heat flow 15 that passes through the low temperature side electrode 6 and is released from the low temperature side electrode. Here, an appropriate electrical load 19 is connected to the electrode-current extraction means installed in the thermal-electrical direct conversion device 1 outside the thermal-electrical direct conversion device 1 and the current connected thereto. By being electrically connected to the thermal-electrical direct conversion device 1 via the extraction means 10, the movement of the semiconductor carrier is taken out of the thermal-electrical direct conversion device 1 as a current flow 18 and used. Can do.

In this way, the thermal-electrical direct conversion device can convert the temperature difference between the high-temperature side electrode and the low-temperature side electrode directly into electricity using a thermal-electrical direct conversion semiconductor and take it out as power outside the device. However, heat can also be transferred from the low temperature side to the high temperature side or from the high temperature side to the low temperature side by applying an electric current from the outside not shown.
JP 2004-1119833 A "Thermoelectric conversion engineering-basics and applications-" Realize p. 349-363 (2001).

  Thus, when a heat difference is added to the thermo-electric direct conversion device to convert heat into electricity, the higher the high temperature side electrode temperature and the lower the low temperature side electrode temperature of the thermo-electric direct conversion device, That is, the greater the temperature difference between the electrodes, the greater the heat conversion efficiency. In addition, when an electric current is applied to the heat-electric direct conversion device to convert electricity into heat, the temperature difference between the high temperature side temperature and the low temperature side temperature of the heat-electric direct conversion device increases as the applied current increases. . For this reason, in the conventional thermal-electrical direct conversion device having the configuration shown in FIG. 2, when used in the atmosphere, components such as electrodes and semiconductor chips are likely to deteriorate due to oxidation, nitridation, etc. There was a problem that the conversion efficiency from electricity to electricity or from electricity to heat decreased with time, and it was difficult to ensure good conversion efficiency over a long period of time.

  In order to solve the above problems, the present inventors can shut off the conventional heat-electric direct conversion device having the structure shown in FIG. 2, for example, from the atmosphere by enclosing it in a casing made of metal or ceramic as it is. A configuration that can prevent deterioration of parts due to oxidation is realized.

  However, since the heat flow supplied to the device passes not only through the semiconductor chip but also through the housing, the rate of heat to be converted is reduced, and conversion efficiency from heat to electricity or from electricity to heat is reduced. Is expected to decline.

  The present invention has been made in order to solve the above-described problems, and can suppress the progress of deterioration due to oxidation or the like of constituent members, maintain good conversion efficiency over a long period of time, and allow a heat flow to flow intensively over a semiconductor chip. It is an object of the present invention to provide a direct thermal-electric conversion device that can facilitate the process and ensure high conversion efficiency.

In order to solve the above-described problems, a thermal-electric direct conversion device according to the present invention includes a thermal-electric direct conversion semiconductor that directly converts thermal energy into electrical energy or electrical energy into thermal energy, and a thermal-electric direct conversion semiconductor. A high-temperature side substrate thermally connected to the high-temperature side end, a low-temperature side substrate thermally connected to the low-temperature side end of the thermo-electric direct conversion semiconductor, a metal lid covering the high-temperature side substrate, and the heat An airtight housing configured of a metal frame surrounding the periphery of the electrical direct conversion semiconductor and the low-temperature side substrate, which shields the thermal direct electrical conversion semiconductor from outside air and holds the interior in a vacuum or an inert gas atmosphere. A heat conductive member provided between a high temperature side end of the thermo-electric direct conversion semiconductor and the metal lid, and the thermo-electric direct conversion semiconductor comprises a p-type semiconductor and an n-type semiconductor. Both sides The high temperature side end is formed with a plurality of semiconductor pairs electrically connected by patch-like high-temperature side electrodes, and the thermal conductive member covers the patch-like high-temperature side electrodes and the high temperature of adjacent semiconductor pairs The side electrode is a metal plate-like member that is formed to be electrically insulated and has substantially the same shape as the high-temperature side electrode, and the thermally conductive member is fixed integrally with the high-temperature side substrate , The low-temperature side substrate has (1) a shape curved in a convex shape toward the outside so as to form a part of a spherical surface, (2) a shape in which a central portion is recessed in a mortar shape, and (3) an end portion. A shape with a spherical convex part at the center while maintaining a flat shape, or (4) a shape with a mortar-shaped convex part at the center while keeping the end flat. It is characterized by that.

  According to the thermal-electrical direct conversion device according to the present invention, the progress of deterioration due to oxidation or the like of the constituent members can be suppressed and the conversion efficiency can be satisfactorily maintained over a long period of time, and the heat flow can be easily flowed through the semiconductor chip. High conversion efficiency can be secured.

  An embodiment of a direct thermal-electric conversion device according to the present invention will be described with reference to the accompanying drawings.

(1) First Embodiment FIG. 1 is a diagram showing a first embodiment of a direct thermal-electric conversion device according to the present invention using an airtight housing that blocks a semiconductor chip from the outside air. ) Is a perspective view showing the configuration of the heat-electric direct conversion device 1a according to the first embodiment, and FIG. 1B is a BB arrow of the heat-electric direct conversion device 1a shown in FIG. FIG.

  As shown in FIG. 1, a thermal-electrical direct conversion device 1a includes a plurality of thermal-electrical direct conversion semiconductor pairs (semiconductor pairs) 4 that directly convert thermal energy into electrical energy or electrical energy into thermal energy, An airtight housing 30 that shields the heat-electricity direct conversion semiconductor pair 4 from the outside air is configured.

  The hermetic casing 30 includes a metal lid 20 that covers the high temperature side substrate 7 that is thermally connected to the high temperature side ends of the plurality of heat-electric direct conversion semiconductor pairs 4, and the periphery of the plurality of heat-electric direct conversion semiconductor pairs 4. And a low temperature side substrate 22 that is thermally connected to the low temperature side ends of the plurality of direct thermal-electrical conversion semiconductor pairs 4. The hermetic casing 30 shields internal components including the plurality of direct heat-electric conversion semiconductor pairs 4 from the outside air, and holds the inside of the hermetic casing 30 in a vacuum or an inert gas atmosphere.

  The inert gas is preferably composed of at least one gas selected from nitrogen, helium, neon, argon, krypton, and xenon. By encapsulating these non-oxidizing gases in the airtight housing 30 and deactivating the internal atmosphere, it is possible to effectively prevent deterioration of components such as semiconductor chips due to oxidation or the like, and high conversion over a long period of time. A direct heat-electric conversion device capable of maintaining efficiency is obtained.

  Moreover, in the thermal-electrical direct conversion device 1a, it is preferable that the pressure of the inert gas atmosphere is set to be lower than the external pressure at normal temperature. By setting the pressure of the inert gas atmosphere in the hermetic casing 30 to be lower than the external pressure, it is possible to effectively prevent moisture from remaining in the inert gas atmosphere in the hermetic casing 30, and the semiconductor chip caused by moisture Degradation damage can be effectively suppressed. Furthermore, since the thermal conductivity in the gas atmosphere in the hermetic casing 30 is reduced, heat can be prevented from being dissipated from the semiconductor chip toward the metal frame, and the heat-electric conversion efficiency can be increased.

  The metal lid 20 and the metal frame 21 constituting the hermetic casing 30 are made of a heat-resistant metal or heat-resistant alloy such as a nickel-based alloy, for example. As the heat-resistant metal or heat-resistant alloy forming the metal lid 20 and the metal frame 21, in addition to a nickel-based alloy, an iron-based alloy selected from nickel, carbon steel, and stainless steel from the viewpoint of durability in a high temperature use environment, It is preferably selected from any one of an iron-based alloy containing chromium, an iron-based alloy containing silicon, an alloy containing cobalt, and an alloy containing copper.

  As shown in FIG. 1B, the thermal-electrical direct conversion semiconductor pair (semiconductor pair) 4 includes a p-type thermal-electrical direct conversion semiconductor chip 2 (p-type semiconductor) and an n-type thermal-electrical direct conversion semiconductor chip. 3 (n-type semiconductor).

  These semiconductors are rare earth elements, actinoids, cobalt, iron, rhodium, ruthenium, palladium, platinum, nickel, antimony, titanium from the viewpoint of thermoelectric conversion efficiency and the ability to maintain a good thermoelectric effect for a long period of time. Heat composed of at least three elements selected from zirconium, hafnium, nickel, tin, cobalt, silicon, manganese, zinc, boron, carbon, nitrogen, gallium, germanium, indium, vanadium, niobium, barium, magnesium -It is preferably an electrical direct conversion semiconductor.

  The crystal structure of these semiconductors is preferably any of a skutterudite structure, a filled skutterudite structure, a Heusler structure, a half-Heusler structure, and a clathrate structure from the viewpoint of a good thermoelectric effect.

  A high temperature side electrode 5 is joined to a high temperature side end portion (upper end portion in FIG. 1) of the thermoelectric direct conversion semiconductor pair 4 via a high temperature side electrode-semiconductor chip junction 11. The high temperature side electrode 5 is provided in a patch shape at the high temperature side end portion of all the heat-electric direct conversion semiconductor pairs 4 (see FIG. 2), and the high temperature side electrodes of the adjacent heat-electric direct conversion semiconductor pairs 4 5 is separated and electrically insulated.

  A first metal plate member 27 as a heat conductive member is provided on the upper side of the high temperature side electrode 5 in FIG. The first metal plate member 27 is formed of a metal plate having high thermal conductivity such as copper.

  The first metal plate member 27 is provided in a patch shape having substantially the same size and shape as the high temperature side electrode 5, and is adjacent to the adjacent heat-electric direct conversion semiconductor pair in the same manner as the high temperature side electrode 5. 4 is electrically insulated.

On the further upper side in FIG. 1 of the first metal plate member 27, a high temperature side substrate (high temperature side insulating plate) 7 is provided so as to almost entirely cover the plurality of heat-electric direct conversion semiconductor pairs 4. The high temperature side substrate 7 is formed of a ceramic substrate having electrical insulation and high thermal conductivity such as alumina (Al ₂ O ₃ ).

  The high temperature side substrate 7 is in contact with the inner surface of the metal lid 20 and is thermally connected to the metal lid 20. Moreover, the high temperature side board | substrate 7 is fixing all the 1st metal plate-shaped members 27 via the 1st metal plate-shaped member fixing material 27a.

  On the other hand, the low temperature side end of the thermoelectric direct conversion semiconductor pair 4 is thermally connected to the low temperature side substrate 22.

  The low temperature side substrate 22 includes the low temperature side electrode 6, the low temperature side insulating plate 8, and a heat release portion 24 to the low temperature side system.

  The low-temperature side electrode 6 is connected to the p-type thermal-electrical direct conversion semiconductor chip 2 or the n-type thermal-electrical direct-conversion semiconductor chip constituting the thermal-electrical direct conversion semiconductor pair 4 via the low-temperature side electrode-semiconductor chip junction 12. 3 and the n-type heat-electric direct conversion semiconductor chip 3 or the p-type heat-electric direct conversion semiconductor chip 2 of the adjacent heat-electric direct conversion semiconductor pair 4 are electrically connected.

  In addition, the low temperature side electrode 6 is thermally connected to the low temperature side insulating plate 8 through the low temperature side electrode-low temperature side insulating plate junction 23.

  The low temperature side substrate 22 is integrally formed by bonding metal plates to both surfaces of the low temperature side insulating plate 8 made of a ceramic plate. Among these, the low temperature side electrode 6 is formed by the metal plate bonded to the upper surface in FIG. 1 of the low temperature side insulating plate 8, while the metal plate bonded to the lower surface in FIG. The heat release part 24 is formed.

  In this way, the low-temperature side substrate 22 is integrally formed on the surface of the low-temperature-side insulating plate 8 in advance by joining the low-temperature-side electrode 6 and the heat-dissipating portion 24 to the low-temperature-side system, thereby directly forming the low-temperature side substrate 22. The assembly work of 1a is simplified. Further, since the bonding strength between the low temperature side insulating plate 8 and the low temperature side electrode 6 and the heat release part 24 to the low temperature side system is high and the degree of adhesion between them can be high, the heat-electricity direct conversion device having excellent durability. 1a is obtained.

  As a material of the metal plate forming the low temperature side electrode 6 and the heat release portion 24 to the low temperature side system, from the viewpoint of heat resistance and electrical conductivity or thermal conductivity, copper, silver, aluminum, tin, iron-based alloy, It is preferably composed of at least one selected from nickel, nickel-base alloy, titanium, and titanium-base alloy.

  Further, the material of the ceramic plate forming the low-temperature side insulating plate 8 includes alumina or a ceramic containing alumina, a metal containing alumina powder dispersedly, silicon nitride or silicon nitride from the viewpoint of stability of insulation resistance. At least one selected from ceramics, ceramics containing aluminum nitride or aluminum nitride, ceramics containing zirconia or zirconia, ceramics containing yttria or yttria, ceramics containing silica or silica, ceramics containing beryllia or beryllia It is preferable that it is comprised.

  The metal lid 20 and the metal frame 21 are joined by welding. In addition, the metal lid 20 and the metal frame 21 may be integrally formed. By integrally forming the metal lid 20 and the metal frame 21, the number of parts is reduced and the assembling work is simplified.

  The joining method of the metal frame 21 and the low temperature side substrate 22 is not particularly limited, but is joined by welding, soldering, brazing, diffusion joining, or an adhesive from the viewpoint of joining strength. Is preferred.

  In the heat-electricity direct conversion device 1a configured as described above, in order to convert heat energy into electric energy, a high-temperature system (not shown) is thermally connected to the metal lid 20 of the heat-electricity direct conversion device 1a. The low temperature system (not shown) is thermally connected to the heat release unit 24 to the low temperature system.

  As a result, a heat flow that flows from the high-temperature side end to the low-temperature side end of the thermo-electric direct conversion semiconductor pair 4 is generated, and a current based on the flow of holes and electrons is generated in the thermo-electric direct conversion semiconductor pair 4. The sum of the currents of all the thermo-electric direct conversion semiconductor pairs 4 is taken out from the current extraction means 10 and can supply power to the external load.

  At this time, the greater the temperature difference between the high-temperature system and the low-temperature system, the higher the thermal-electric conversion efficiency. For example, if the temperature of the low temperature system is room temperature, the higher the temperature of the high temperature system, the higher the heat-electric conversion efficiency.

  Thus, in order to increase the heat-electricity conversion efficiency, it is effective to operate the temperature of the metal lid 20 and the like of the heat-electricity direct conversion device 1a at a high temperature condition, for example, about 500 ° C.

  However, when the thermal-electrical direct conversion device 1a is operated under a high temperature condition in the atmosphere, components such as electrodes and semiconductor chips are easily oxidized and nitrided, so that deterioration easily proceeds. In order to suppress the progress of deterioration of these constituent members, to suppress a decrease in conversion efficiency from heat to electricity or from electricity to heat, and to ensure good conversion performance over a long period of time, this embodiment is used. As shown, it is effective to use an airtight housing 30 that shields the thermal-electrical direct conversion device from outside air.

  As shown in FIG. 1, in the thermal-electric direct conversion device according to the present embodiment, a plurality of thermal-electrical units each including a p-type thermal-electrical direct conversion semiconductor chip 2 and an n-type thermal-electrical direct conversion semiconductor chip 3. The low temperature side end of the direct conversion semiconductor pair 4 is bonded to the low temperature side substrate 22, while the high temperature side end is the high temperature side electrode-semiconductor chip bonding portion 11, the high temperature side electrode 5, and the first metal plate member. 27, mechanically and thermally connected to a high temperature side substrate (high temperature side insulating plate) 7.

  The thermal-electrical direct conversion device 1a directly converts the temperature difference between the metal lid 20 on the side to which heat is supplied and the low-temperature side substrate 22 into electricity and takes it out of the device as power, or from the outside to the device input end Current is supplied to the heat source to cause heat transfer from the low temperature side system to the high temperature side system. Since the portion in contact with the metal lid 20 to which heat is supplied becomes high temperature, it is necessary to protect the conversion element such as a semiconductor chip and the electrode from oxidation under a high temperature environment.

  Therefore, in this embodiment, in order to fill the inside of the apparatus with an oxidation-resistant gas such as nitrogen and seal the inside of the apparatus, the metal lid 20, the metal frame 21, and the low-temperature side substrate 22 are integrally bonded and fixed, and an airtight housing 30 is formed.

  Further, as shown in FIG. 1, the current extraction means 10 for supplying the generated electric power to the outside is also connected to the low temperature side electrode via the electrode-current extraction means 9 that penetrates the low temperature side insulating plate 8. 6 is tightly connected, and the airtightness of the airtight housing 30 is maintained.

  According to the direct thermal-electric conversion device 1a according to the present embodiment, the inside of the hermetic casing 30 in which constituent members such as the thermal-electrical direct conversion semiconductor pair 4, the high temperature side electrode 5, and the low temperature side electrode 6 are accommodated is hermetically sealed. And the inside can be maintained in a vacuum or an inert gas atmosphere. As a result, even when operated in a high temperature environment, it is possible to effectively suppress the progress of deterioration due to oxidation or nitridation of the component members installed in the hermetic casing 30 of the thermal-electrical direct conversion device 1a. It becomes possible.

  By the way, the metal lid 20 and the metal frame 21 constituting the hermetic casing 30 are made of a heat-resistant metal or a heat-resistant alloy such as a nickel base alloy from the viewpoint of durability in a high temperature use environment. These refractory metals or alloys have a certain thermal conductivity. For this reason, a part of the heat applied to the metal lid 20 flows from the metal lid 20 through the metal frame 21 to the low temperature side substrate 22 and finally flows to a low temperature system (not shown). The so-called heat side current flowing through the metal frame 21 does not contribute to thermoelectric conversion at all.

  Ideally, the highest thermoelectric conversion efficiency can be realized by the fact that all of the heat applied to the metal lid 20 becomes a so-called main flow that flows inside the thermo-electric direct conversion semiconductor pair 4. In reality, the thermoelectric conversion efficiency is reduced by the side current of the heat flowing through the metal frame 21.

  In order to improve the thermoelectric conversion efficiency, it is necessary to reduce the side current of the heat flowing through the metal frame 21 and concentrate the reduced heat flow on the main flow flowing through the thermo-electric direct conversion semiconductor pair 4. In order to achieve this, the thermal resistance of the path from the metal lid 20 through the metal frame 21 to the low temperature side substrate 22 is increased to make it difficult for the heat flow to flow. It is effective to reduce the thermal resistance of the path through 4 to the low temperature side substrate 22 to facilitate the flow of heat.

  The thermal-electrical direct conversion device 1a according to the present embodiment provides a first metal plate member 27, which is a heat conductive member, between the high temperature side substrate 7 and the high temperature side electrode 5, thereby removing the metal lid 20 from the metal lid 20. It is possible to reduce the thermal resistance of the path leading to the thermal-electrical direct conversion semiconductor pair 4.

  In the operation of the thermal-electrical direct conversion device 1a, the metal lid 20 and the low temperature side substrate 22 are appropriately connected to each other by a high temperature system (not shown) that contacts the metal lid 20 and a low temperature system (not shown) that contacts the low temperature side substrate 22. It is pressed by pressing. At this time, if the first metal plate member 27 does not exist, the high temperature side substrate (high temperature side insulating plate) 7 formed of a ceramic plate and the high temperature side electrode 5 are in direct contact. The entire contact surface between the high temperature side substrate 7 and the high temperature side electrode 5 is not necessarily an ideal perfect plane due to restrictions such as processing accuracy. Further, the thermo-electric direct conversion semiconductor pair 4 itself has a manufacturing error in the height direction between individuals. For this reason, even if the high temperature side substrate 7 and the high temperature side electrode 5 are pressed with an appropriate pressure, the high temperature side substrate 7 and the high temperature side electrode 5 are completely formed over the entire thermo-electric direct conversion semiconductor pair 4. There may be cases where they do not touch.

  On the other hand, when the first metal plate member 27 formed of a metal having a high thermal conductivity such as copper is present between the high temperature side substrate 7 and the high temperature side electrode 5, the first metal The plate-shaped member 27 is deformed by being pressed from the high temperature side substrate 7 and the high temperature side electrode 5, and an error caused by the roughness of the contact surface between the high temperature side substrate 7 and the high temperature side electrode 5, or the thermo-electric direct conversion semiconductor pair It becomes possible to absorb manufacturing errors in the height direction between the four individuals. For this reason, it becomes possible to reduce the contact thermal resistance of the path | route from the metal cover 20 to the high temperature side electrode 5 of all the thermoelectric direct conversion semiconductor pairs 4. FIG.

  As a result, of the heat applied to the metal lid 20, the ratio of flowing through the heat-electric direct conversion semiconductor pair 4 is increased, the ratio of the heat flow flowing through the metal frame 21 is decreased, and the thermoelectric conversion efficiency is improved. .

  The first metal plate member 27 is formed in a patch shape having substantially the same shape and the same dimensions as the high temperature side electrode 5, and is insulated from the high temperature side electrode 5 of the adjacent thermoelectric direct conversion semiconductor pair 4. Is secured. For this reason, it is not necessary to provide an insulating sheet separately.

  The first metal plate-like member 27 is fixed integrally with the high-temperature side substrate 7 via the first metal plate-like member fixing member 27a, and the assembly workability of the thermal-electrical direct conversion device 1a is also improved. It is good.

  Thus, according to the thermal-electrical direct conversion device 1a according to the first embodiment, the airtight casing 30 can suppress the progress of deterioration due to oxidation or the like of the internal components, and can maintain good conversion efficiency over a long period of time. At the same time, the contact heat resistance is reduced by the first metal plate-like member 27, and it is easy to concentrate the heat flow on all the heat-electrical direct conversion semiconductor pairs 4, thereby ensuring high conversion efficiency.

(2) Second Embodiment FIG. 3 shows a second embodiment of the direct thermoelectric conversion device 1b according to the present invention. The external appearance of the thermal-electrical direct conversion device 1b is the same as that of the thermal-electrical direct conversion device 1a according to the first embodiment, and FIG. 3 shows a cross-sectional view taken along the line BB corresponding to FIG. It is a thing.

  The difference between the thermoelectric direct conversion device 1b according to the second embodiment and the thermoelectric direct conversion device 1a according to the first embodiment is that a second metal plate member 28 is added. It is in.

  As shown in FIG. 3, the thermal-electrical direct conversion device 1 b has a configuration in which a second metal plate member 28 is further provided as a heat conductive member between the high temperature side substrate 7 and the metal lid 20. Yes.

  The second metal plate member 28 is disposed on the surface opposite to the surface of the high temperature side substrate 7 to which the first metal plate member 27 is bonded via the second metal plate member fixing material 28a. Bonding is performed over almost the entire surface of the high temperature side substrate 7. Similarly to the first metal plate member 27, the second metal plate member 28 is formed of a metal plate having a high thermal conductivity such as copper.

  In the first embodiment, the inner surface of the metal lid 20 and the surface of the high temperature side substrate 7 formed of a ceramic plate are in direct contact with each other. For this reason, depending on the processing accuracy of the inner surface of the metal lid 20 and the surface of the high-temperature side substrate 7, there is a possibility that a region where both surfaces do not completely come into contact may be generated. For this reason, the contact thermal resistance increases by decreasing the contact area between the metal lid 20 and the high temperature side substrate 7, and the heat applied to the metal lid 20 is sufficient in the direction of the heat-electric direct conversion semiconductor pair 4. It is conceivable that the metal does not flow but escapes toward the metal frame 21, resulting in a decrease in thermoelectric conversion efficiency.

  According to the second embodiment, the second metal plate member 28 is deformed by a pressure pressed from a high-temperature system and a low-temperature system (not shown), resulting from the processing accuracy of the inner surface of the metal lid 20 or the surface of the high-temperature side substrate 7. It is possible to absorb errors that occur. For this reason, the metal lid 20 and the high temperature side substrate 7 are ensured in good contact over the entire area, and the contact thermal resistance is reduced. As a result, the heat applied to the metal lid 20 does not flow to the metal frame 21, but is concentrated on the heat-electric direct conversion semiconductor pair 4 and the thermoelectric conversion efficiency of the heat-electric direct conversion device 1b is improved. To do.

  Further, the second metal plate member 28 is integrally joined to the high temperature side substrate 7 via the second metal plate member fixing material 28a, similarly to the first metal plate member 27, A new assembling work does not occur when assembling the thermal-electrical direct conversion device 1b, and high working efficiency is maintained.

  Furthermore, by using the same metal material for the second metal plate member 28 and the first metal plate member 27, for example, copper, substantially the same layer can be formed on both surfaces of the high temperature side substrate 7. Therefore, there is also an effect of preventing deformation due to warping of the high temperature side substrate 7. This effect can further reduce the contact thermal resistance.

  Thus, according to the thermo-electrical direct conversion device 1b according to the second embodiment, in addition to the effects of the first embodiment, the contact thermal resistance can be further reduced, and heat with high thermoelectric conversion efficiency can be achieved. The electric direct conversion device 1b can be realized.

(3) Third Embodiment FIG. 4 shows a third embodiment of the direct thermoelectric conversion device 1c according to the present invention. The external appearance of the thermal-electrical direct conversion device 1c is the same as that of the thermal-electrical direct conversion device 1a according to the first embodiment, and FIG. 4 shows a cross-sectional view taken along line BB corresponding to FIG. It is a thing.

  The direct thermal-electric conversion device 1c according to the third embodiment has the shape of the low-temperature side substrate 22 of the thermal-electrical direct conversion device 1b according to the second embodiment as viewed from the outside (lower side in FIG. 4). It is formed so as to have a convex shape. Other parts are the same as those in the second embodiment.

  The low temperature side substrate 22 of the thermal-electrical direct conversion device 1c is formed to be gently curved in a convex shape toward the outside so as to form a part of a spherical surface as a whole.

  FIG. 4 shows the degree of curvature extremely exaggerated for convenience of explanation. In practice, the amount of displacement in the height direction of the central portion and the end portion of the low-temperature side substrate 22 is as small as 1 mm or less, for example. Amount.

  During operation of the heat-electrical direct conversion device 1c, the metal lid 20 and the low temperature side substrate 22 are pressed with appropriate pressure by a high temperature system and a low temperature system (not shown).

  As a result, the low temperature side substrate 22 is deformed so as to be substantially flat. At the same time, a strong pressing force is generated at the center of the thermal-electrical direct conversion device 1c. This pressing force is larger than that when the low temperature side substrate 22 is originally flat (first or second embodiment). By this pressing force, the contact thermal resistance of the heat flow path flowing through the thermoelectric direct conversion semiconductor pair 4 is reduced, and the amount of heat flow flowing through the thermoelectric direct conversion semiconductor pair 4 is increased.

  On the other hand, the pressing force against the metal frame 21 corresponding to the end of the thermal-electrical direct conversion device 1c is smaller than when the shape of the low-temperature side substrate 22 is originally flat. For this reason, the contact thermal resistance of the path from the metal lid 20 to the low temperature side substrate 22 via the metal frame 21 increases, and the amount of heat flow flowing through the metal frame 21 decreases.

  As a result, the thermoelectric conversion efficiency of the thermoelectric direct conversion device 1c is further improved.

  According to the direct thermoelectric conversion device 1c according to the third embodiment, in addition to the effects of the first and second embodiments, the thermoelectric conversion efficiency can be further improved.

  Note that the convex shape of the low temperature side substrate 22 is not limited to the substantially spherical shape shown in FIG. 4, and various shapes are possible.

  FIG. 5 shows a modification of the direct thermoelectric conversion device 1c according to the third embodiment. The difference between FIGS. 5A to 5D with respect to FIG. The specific shape of the convex shape is different.

  FIG. 5A shows a shape in which the central portion of the low-temperature side substrate 22 is kept substantially flat while the end portion is curved.

  FIG. 5 (b) shows the low temperature side substrate 22 in a mortar shape with the center portion recessed.

  FIG. 5C shows a shape in which a spherical convex portion is provided at the center while the end of the low temperature side substrate 22 is maintained substantially flat.

  FIG. 5D shows a shape in which a mortar-shaped convex portion is provided at the central portion while maintaining the end portion of the low-temperature side substrate 22 in a substantially flat shape.

  5 (a) to 5 (d), the contact thermal resistance at the central portion is reduced at the same time as the thermal-electrical direct conversion device 1c shown in FIG. The thermoelectric conversion efficiency is improved by increasing the heat flow and concentrating on the central thermo-electric direct conversion semiconductor pair 4.

  The shape of the low temperature side substrate 22 in FIG. 5 is illustrated with the degree of curvature extremely exaggerated for convenience of explanation, as in FIG.

(4) Other Embodiments FIG. 6 shows that the portion facing the high temperature side insulating plate 7 of the metal lid 20 of the thermal-electrical direct conversion device is higher than the other portions in the second embodiment. 1 shows an embodiment of a direct heat-electric conversion device in which the amount of heat passing through a metal frame 21 is reduced and conversion performance is improved.

  That is, in the thermal-electrical direct conversion device according to this embodiment, in addition to the configuration of the second embodiment, the metal lid 20 is at least a portion facing the high-temperature side substrate 7 built in the airtight housing 30. Is formed so as to protrude in the heat input direction higher than the peripheral portion.

  According to the thermal-electrical direct conversion device according to the present embodiment, the heat transfer path from the metal lid 20 to the low temperature side substrate 22 via the metal frame 21 is opposed to the high temperature side insulating plate 7 of the metal lid 20. Compared to the case where the height of the other portion is equal to the height of the other portion, the length can be made longer, and the heat supplied to the apparatus can be received intensively at the central portion of the metal lid 20, so that the heat-electricity direct Heat can be intensively introduced into the conversion semiconductor pair 4 and the thermoelectric conversion efficiency can be further increased. In particular, since the heat transfer path can be lengthened and the heat transfer resistance of this path can be relatively increased, the low temperature side substrate is connected from the metal lid 20 via the thermo-electric direct semiconductor pair 4. Therefore, it is possible to increase the amount of heat that reaches 22 and improve the performance of the direct heat-electric conversion device.

  The heat transfer path from the metal lid 20 to the low temperature side substrate 22 via the metal frame 21 is provided with a step-shaped path 31 at the periphery of the metal lid 20 as shown in FIGS. 6 and 9A. It is not limited only to the provided form. For example, as shown in FIG. 9B, a structure in which an arc-shaped path 32 is provided at the peripheral edge of the metal lid 20, a structure in which the arc-shaped path is formed in multiple stages, or a structure shown in FIG. 9C. Thus, it is also possible to adopt a structure in which the bent portion 33 having a V-shaped cross section is formed on the peripheral portion of the metal lid 20 or a structure in which the bent portions 34 are formed in multiple stages as shown in FIG. . The step-shaped path 31, the arc-shaped path 32, and the bent portions 33, 34 are also a thermal stress absorbing mechanism that absorbs the displacement and suppresses the generation of thermal stress even when the metal lid 20 is thermally expanded. Useful because it works.

  FIG. 7 shows the metal lid 20 itself and a portion thereof not connected to the high temperature side insulating plate (high temperature side substrate) 7 of the metal lid 20 of the thermal-electrical direct conversion device. 1 shows an embodiment of a direct heat-electric conversion device provided with a mechanism for relaxing thermal stress generated in the metal lid 20 and the metal frame 21 by further comprising means for absorbing the thermal expansion of the metal frame 21.

  That is, the thermal-electrical direct conversion device according to the embodiment shown in FIG. 7 includes, in addition to the configuration of the second embodiment, the high-temperature side substrate 7 built in the hermetic casing 30 among the metal lid 20. A portion that is not opposed is provided with a thermal expansion absorbing means 35 that absorbs thermal expansion of the metal lid 20 itself and the metal frame 21 connected thereto.

  In the thermal-electrical direct conversion device according to this embodiment, in order to relieve the thermal stress generated in the metal lid 20 and the metal frame 21 connected to the metal lid 20 and the stress generated in other parts due to those stresses. The metal lid 20 and the metal frame 21 connected to the metal lid 20 are generated by providing the thermal expansion absorbing means 35 having a V-shaped cross section at a portion of the metal lid 20 not facing the high temperature side insulating plate 7. Thermal expansion and thermal deformation can be absorbed.

  In addition to the V-shaped cross section shown in FIGS. 7 and 9C, the cross-sectional shape of the thermal expansion absorbing means 35 has an arc-shaped cross section as shown in FIG. Or a V-shaped cross section formed in two or more stages as shown in FIG. 9 (d) can be adopted, both of which are effective for thermal expansion and thermal deformation of the constituent members. Can be absorbed.

  FIG. 8 shows a metal frame provided with means for lengthening the heat transfer path from the metal lid 20 of the thermo-electric direct conversion device to the low temperature side substrate 22 through the metal frame 21 in the second embodiment. An embodiment of a direct heat-electricity conversion device that suppresses a heat passage amount in 21 and suppresses a decrease in the heat passage amount of the heat-electric direct semiconductor pair due to the provision of the metal frame 21 and improves thermoelectric conversion performance. Show.

  That is, the heat-electrical direct conversion device according to the embodiment shown in FIG. 8 has a heat transfer path from the metal lid 20 to the low temperature side substrate via the metal frame 21 in addition to the configuration of the second embodiment. A lengthening flange mechanism 36 is provided on at least one of the metal lid 20 and the metal frame 21.

  In the direct heat-electric conversion device according to the embodiment shown in FIG. 8, as a means for taking a long heat transfer path, a flange mechanism is provided in the middle of the heat transfer path from the metal lid 20 to the low temperature side substrate 22 via the metal frame 21. This is an example when 36 is provided. In the present embodiment, a flange mechanism 36 is formed by combining a flange 36 a extending outward from the outer peripheral edge of the metal lid 20 and a flange 36 b extending outward from the upper end of the metal frame 21. Then, the flange 36b provided on the metal frame 21 and the flange 36a provided on the metal lid 20 are sealed and welded so that the joining portion is on the outer peripheral side of the flange, whereby the heat transfer path between the metal lid 20 and the metal frame 21 is achieved. The length is increased by an amount corresponding to the distance (width) of the flange.

  By using this structure, the heat transfer path length from the metal lid 20 to the low temperature side substrate 22 via the metal frame 21 is increased, and the heat transfer resistance is increased to make it difficult for heat to propagate. The amount of heat passing through the heat transfer path from the heat-electric direct semiconductor pair 4 to the low-temperature side substrate 22 can be relatively increased, and the thermoelectric conversion performance in the heat-electric direct conversion device is further improved. Can do.

  In addition, as another means for ensuring the heat transfer path long, a structure in which the shape of the peripheral edge of the metal lid 20 is an arc as shown in FIG. 9B, a structure in which the arc-shaped path is multi-staged, By adopting a path structure having a V-shaped cross section as shown in FIG. 9C and a structure in which a path having a V-shaped cross section is formed in multiple stages as shown in FIG. 9D, the heat transfer path is made longer. Is also possible.

  In addition, as another means for ensuring a long heat transfer path, the metal frame 21 may be a metal frame 21 having a bent portion whose section is bent in a V shape as shown in FIG. Further, as shown in FIG. 11B, a metal frame 21 in which a bent portion whose section is refracted in a V shape is formed in two or more stages may be adopted. Further, as shown in FIG. 11C, a metal frame 21 provided with a bent portion having an arc-shaped cross section may be employed. Moreover, as shown in FIG.11 (d), you may employ | adopt the metal frame 21 which formed the bending part which has an arc-shaped cross section in two or more steps | paragraphs. Furthermore, a metal frame 21 provided with a bent portion having an S-shaped cross section as shown in FIG. In either case, it is possible to ensure a long heat transfer path.

  FIG. 10 shows an embodiment of a direct heat-electric conversion device in which the cross-sectional area is reduced by forming the four corners of the cross section of the metal frame 21 into a curved shape in order to reduce the amount of heat passing through the metal frame 21. is there.

  That is, in the thermal-electrical direct conversion device according to the embodiment shown in FIG. 10, in addition to the configurations of the first to third embodiments, at least a part of the outer peripheral surface of the metal frame 21 is formed in a curved shape. It is characterized by that.

  In the thermal-electrical direct conversion device according to the present embodiment, as shown in FIG. 10A, the metal lid 20, the metal frame 21, and the low temperature side substrate 22 are integrally joined to form an airtight casing 30. Has been. However, with respect to the cross-sectional shape of the metal frame 21, from the state of the metal frame 21 having a conventional general rectangular cross section as shown on the left side of FIG. The metal frame 21 subjected to (R processing) is used.

  According to the direct thermal-electric conversion device according to the present embodiment, the cross-sectional area of the metal frame 21 can be reduced as compared with a conventional metal frame having a rectangular cross section without a curved surface portion, and heat passage in the metal frame 21 is achieved. Since the amount can be reduced, the amount of heat passing from the metal lid 20 to the low-temperature side substrate 22 via the heat-electric direct semiconductor pair 4 can be relatively increased, and direct heat-electric conversion. The thermoelectric conversion performance in the apparatus can be further improved.

  As another means for reducing the cross-sectional area of the cross section of the metal frame 21, it is possible to perform chamfering at four corners in the cross section. Moreover, you may reduce the cross-sectional area of the metal frame 21 by processing so that it may have the curved surface which a curvature changes continuously instead of the curved surface which has a fixed curvature.

  Next, the implementation of the direct heat-electricity conversion device provided with means for absorbing the thermal expansion of the metal frame 21 of the heat-electrical direct conversion device and provided with a mechanism for relaxing the thermal stress generated in the metal lid 20 and the metal frame 21. The form is shown in FIG.

  That is, the thermal-electrical direct conversion device according to the embodiment shown in FIG. 11 is a thermal expansion absorption unit that absorbs thermal expansion of the metal frame 21 in the height direction of the metal frame 21 in addition to the configuration of the second embodiment. 37 is provided.

  In this embodiment, in order to relieve the thermal stress generated in the metal lid 20 and the metal frame 21 connected to the metal lid 20, the metal frame 21 has a V-shaped cross section as shown in FIG. A bent portion is provided as the thermal expansion absorbing means 37. The thermal expansion absorbing means 37 having a bent portion having a V-shaped cross section easily absorbs thermal expansion and thermal deformation generated in the metal lid 20 and the metal frame 21 connected to the metal lid 20. The cross-sectional shape of the thermal expansion absorbing means 37 may have a structure in which V-shaped bent portions are provided in two or more stages as shown in FIG. Moreover, as shown in FIG.11 (c), it can also be set as the structure which provided the circular-arc-shaped bending part. Furthermore, as shown in FIG. 11D and FIG. 11E, a structure in which arc-shaped bent portions are provided in multiple stages may be employed.

  FIG. 12 shows an example of a joining structure between the metal lid 20 and the metal frame 21 and an example of a joining structure between the metal frame 21 and the low temperature side substrate 22. FIG. 12A shows a state in which the metal lid 20 and the metal frame 21 are joined by welding. FIG. 12B shows an embodiment in which the metal lid 20 and the metal frame 21 are integrally formed. On the other hand, the metal frame 21 and the low temperature side substrate 22 are bonded via a low temperature substrate-metal frame bonding portion 25. The joining is performed by welding, soldering or brazing, diffusion joining, or a joining method using an adhesive.

  According to the above joining method, the joining operation is simple and sufficient joining strength can be obtained. In particular, by integrally molding the metal lid and the metal frame, the number of device parts is reduced and the device can be easily assembled.

  Note that the present invention is not limited to the above-described embodiment as it is, and can be embodied by modifying the constituent elements without departing from the scope of the invention in the implementation stage. In addition, various inventions can be formed by appropriately combining a plurality of constituent elements disclosed in the embodiment. For example, some components may be deleted from all the components shown in the embodiment. Furthermore, the constituent elements over different embodiments may be appropriately combined.

BRIEF DESCRIPTION OF THE DRAWINGS The structure of the thermoelectric direct conversion apparatus which concerns on 1st Embodiment is shown, (a) is a perspective view which shows the external appearance of an apparatus, (b) is BB arrow sectional drawing in Fig.1 (a). The perspective view which shows the structural example of the conventional thermoelectric direct conversion apparatus, and the schematic diagram which expands and shows the principal part. Sectional drawing of the principal part of the thermoelectric direct conversion apparatus which concerns on 2nd Embodiment. Sectional drawing of the principal part of the thermoelectric direct conversion apparatus which concerns on 3rd Embodiment. Sectional drawing of the principal part of the thermoelectric direct conversion apparatus which concerns on the modification of 3rd Embodiment. Sectional drawing of the principal part of the thermoelectric direct conversion apparatus in embodiment which added the level | step difference shape to the metal cover which concerns on 2nd Embodiment. Sectional drawing of the principal part of the thermoelectric direct conversion apparatus in embodiment which added the thermal expansion absorption means to the metal cover which concerns on 2nd Embodiment. Sectional drawing of the principal part of the thermoelectric direct conversion apparatus in embodiment which added the level | step difference shape and the flange mechanism to the metal lid which concerns on 2nd Embodiment. It is sectional drawing of the principal part of the thermoelectric direct conversion apparatus which concerns on embodiment which added the thermal expansion absorption means with respect to 2nd Embodiment, (a) shows the structural example which provided the step-shaped path | route, (B) shows the structural example which provided the circular arc-shaped path | route, (c) shows the structural example which provided the bending part, (d) is sectional drawing which shows the structural example which provided the bending part in multiple steps. The thermoelectric direct conversion apparatus which concerns on embodiment which formed the outer peripheral surface of the metal frame in the shape of a curved surface is shown, (a) is a perspective view which shows the external appearance of an apparatus, (b) is a plane which shows the cross-sectional shape of a metal frame. Sectional drawing. It is sectional drawing of the principal part of the thermoelectric direct conversion apparatus which concerns on embodiment which provided the thermal expansion absorption means in the metal frame which concerns on 2nd Embodiment, (a) heats the bending part which has a V-shaped cross section. The structural example formed in the metal frame as an expansion | swelling absorption means is shown, (b) shows the structural example which formed the thermal expansion absorption means in which the bending part was formed in multiple steps in the metal frame, (c) has an arc-shaped cross section. An example of a configuration in which a bent portion is formed as a thermal expansion absorbing means on a metal frame is shown. (D) shows an example of a configuration in which a bent portion having an arc-shaped cross section is formed in two stages to be a thermal expansion absorbing means. ) Is a cross-sectional view showing a configuration example in which a bent portion having an arc-shaped cross section is coupled in an S shape to form a thermal expansion absorbing means. It is sectional drawing which shows the principal part of the thermoelectric direct conversion apparatus which concerns on 2nd Embodiment, (a) is sectional drawing which shows the state which joined the metal cover 20 and the metal frame 21 by welding, ( b) is a sectional view showing an embodiment in which a metal lid 20 and a metal frame 21 are integrally formed.

Explanation of symbols

1, 1a, 1b, 1c Thermal-electrical direct conversion device 2 p-type thermal-electrical direct conversion semiconductor chip (p-type semiconductor)
3 n-type direct thermal-electric conversion semiconductor chip (n-type semiconductor)
4 Thermal-electric direct conversion semiconductor pair (semiconductor pair)
5 High temperature side electrode 6 Low temperature side electrode 7 High temperature side substrate (high temperature side insulating plate)
8 Low temperature side insulating plate 9 Connection means 10 with electrode-current extraction means 10 Current extraction means 11 High temperature side electrode-semiconductor chip junction 12 Low temperature side electrode-semiconductor chip junction 13 Heat flow 14 supplied to high temperature side electrode Passing heat flow 15 Heat flow emitted from the low temperature side electrode 16 Hole 17 Electron 18 Current flow 19 Electrical load 20 Metal lid 21 Metal frame 22 Low temperature side substrate 23 Low temperature side electrode-low temperature side insulating plate junction 24 Low temperature side system Heat release part 25 Low temperature substrate-metal frame joint part 26 Current extraction part insulation means 27 First metal plate member (thermally conductive member)
27a First metal plate member fixing material 28 Second metal plate member (heat conductive member)
28a 2nd metal plate-shaped member fixing material 30 Airtight housing 31 Step-like path 32 Arc-shaped path 33 Bent part 34 Multi-stage bent part 35 Thermal expansion absorbing means 36 Flange mechanism 36a, 36b Flange 37 Thermal expansion absorbing means

Claims (16)

A thermal-electric direct conversion semiconductor that directly converts thermal energy into electrical energy or electrical energy into thermal energy;
A high temperature side substrate thermally connected to a high temperature side end of the thermoelectric direct conversion semiconductor;
A low temperature side substrate thermally connected to a low temperature side end of the thermo-electric direct conversion semiconductor;
The metal lid that covers the high-temperature side substrate, a metal frame that surrounds the periphery of the thermal-electrical direct conversion semiconductor, and the low-temperature side substrate, blocks the thermal-electrical direct conversion semiconductor from the outside air, An airtight housing that maintains an inert gas atmosphere;
A heat conductive member provided between the high-temperature side end of the thermoelectric direct conversion semiconductor and the metal lid;
With
The thermal-electrical direct conversion semiconductor is formed by including a plurality of semiconductor pairs, each of which is composed of a p-type semiconductor and an n-type semiconductor, and whose high-temperature side ends are electrically connected by patch-like high-temperature side electrodes,
The heat conductive member covers the patch-like high temperature side electrode, is formed so as to be electrically insulated from the high temperature side electrode of the adjacent semiconductor pair, and has a substantially identical shape to the high temperature side electrode. Shaped member,
The thermally conductive member is fixed integrally with the high temperature side substrate ,
The low-temperature side substrate has (1) a shape curved in a convex shape toward the outside so as to form a part of a spherical surface, (2) a shape in which a central portion is recessed in a mortar shape, and (3) an end portion. A shape with a spherical convex part at the center while maintaining a flat shape, or (4) a shape with a mortar-shaped convex part at the center while keeping the end flat. To be
A direct heat-electric conversion device. The thermally conductive member is
A first metal plate member that covers the patch-like high-temperature side electrode and is formed to be electrically insulated from the high-temperature side electrode of an adjacent semiconductor pair, and has substantially the same shape as the high-temperature side electrode;
A second metal plate member provided between the high temperature side substrate and the metal lid that covers the first metal plate member and has electrical insulation,
Said first and second metal plate member is respectively integrally joined to the front and back surfaces of the high temperature side substrate,
The thermal-electrical direct conversion device according to claim 1. The metal lid of claim 1, characterized in that it is formed as a portion facing the high temperature side substrate built in at least said hermetic housing projects higher heat input direction from the peripheral portion Thermal-electric direct conversion device. Of the metal lid, a thermal expansion absorbing means for absorbing thermal expansion of the metal lid itself and a metal frame connected to the metal lid itself is provided in a portion not facing the high temperature side substrate built in the hermetic casing. The thermal-electrical direct conversion device according to claim 1, wherein According to claim 1, characterized in that disposed flange mechanism to increase the heat transfer path through the metal frame of the metal lid to the low temperature side substrate to at least one of the metal lid and said metal frame Direct heat-electric conversion device. 2. The thermal-electrical direct conversion device according to claim 1, wherein at least a part of the outer peripheral surface of the metal frame is formed in a curved shape. The thermal-electrical direct conversion device according to claim 1, further comprising thermal expansion absorption means for absorbing thermal expansion of the metal frame in a height direction of the metal frame. The metal lid and the metal frame are welded or integrally formed, while the low-temperature side substrate and the metal frame are bonded by welding, soldering, brazing, diffusion bonding, or an adhesive. The thermal-electrical direct conversion device according to claim 1, wherein 2. The direct thermal-electric conversion device according to claim 1, wherein the inert gas atmosphere is made of at least one gas selected from nitrogen, helium, neon, argon, krypton, and xenon. 2. The direct thermal-electric conversion device according to claim 1, wherein the pressure of the inert gas atmosphere is set to be lower than the external atmospheric pressure at normal temperature. 2. The direct heat-electric conversion device according to claim 1, wherein the metal lid and the metal frame are made of a heat-resistant metal or heat-resistant alloy that can withstand a high temperature side temperature of the heat-electric direct conversion device. The heat-resistant alloy is an iron-based alloy selected from nickel or a nickel-based alloy, carbon steel, and stainless steel, an iron-based alloy containing chromium, an iron-based alloy containing silicon, an alloy containing cobalt, and an alloy containing copper. It is either, The thermal-electrical direct conversion apparatus of Claim 11 characterized by the above-mentioned. The low-temperature side substrate comprises a ceramic plate and a metal plate bonded to at least one surface of the ceramic plate. The metal plate is copper, silver, aluminum, tin, iron-base alloy, nickel, nickel-base alloy, titanium. The thermo-electric direct conversion device according to claim 1 , characterized in that it comprises at least one selected from titanium-based alloys. The ceramic plate used for the low temperature side substrate is alumina or a ceramic containing alumina, a metal containing alumina powder dispersedly, a ceramic containing silicon nitride or silicon nitride, a ceramic containing aluminum nitride or aluminum nitride, zirconia or ceramic containing zirconia, a ceramic containing yttria or yttria ceramic containing silica or silica according to claim 13, characterized in that it consists of at least one selected from ceramic containing beryllia or beryllia Thermal-electric direct conversion device. The thermal-electrical direct conversion semiconductor comprises a p-type semiconductor and an n-type semiconductor, and these semiconductors are rare earth elements, actinoids, cobalt, iron, rhodium, ruthenium, palladium, platinum, nickel, antimony, titanium, zirconium, Thermo-electric direct composed of at least three elements selected from hafnium, nickel, tin, cobalt, silicon, manganese, zinc, boron, carbon, nitrogen, gallium, germanium, indium, vanadium, niobium, barium, magnesium 2. The thermal-electrical direct conversion device according to claim 1, which is a conversion semiconductor. The crystal structure of the p-type or n-type direct thermal-electric conversion semiconductor is any one of a skutterudite structure, a filled skutterudite structure, a Heusler structure, a half-Heusler structure, and a clathrate structure. The thermal-electrical direct conversion device according to claim 15 .

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