JP4486127B2 - Ultrasonic probe and manufacturing method thereof - Google Patents
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- 239000000523 sample Substances 0.000 title claims description 35
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 238000000034 method Methods 0.000 claims description 18
- 239000004593 Epoxy Substances 0.000 claims description 15
- 239000013078 crystal Substances 0.000 claims description 12
- 229910052709 silver Inorganic materials 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 238000002604 ultrasonography Methods 0.000 claims description 4
- 238000005452 bending Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
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- 238000010586 diagram Methods 0.000 description 4
- 239000012071 phase Substances 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910020215 Pb(Mg1/3Nb2/3)O3PbTiO3 Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- QNZFKUWECYSYPS-UHFFFAOYSA-N lead zirconium Chemical compound [Zr].[Pb] QNZFKUWECYSYPS-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 238000012285 ultrasound imaging Methods 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
- B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
- B06B1/0644—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using a single piezoelectric element
- B06B1/0662—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using a single piezoelectric element with an electrode on the sensitive surface
- B06B1/0677—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using a single piezoelectric element with an electrode on the sensitive surface and a high impedance backing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
- B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
- B06B1/0644—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using a single piezoelectric element
- B06B1/0662—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using a single piezoelectric element with an electrode on the sensitive surface
- B06B1/0681—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using a single piezoelectric element with an electrode on the sensitive surface and a damping structure
- B06B1/0685—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using a single piezoelectric element with an electrode on the sensitive surface and a damping structure on the back only of piezoelectric elements
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Ultra Sonic Daignosis Equipment (AREA)
- Transducers For Ultrasonic Waves (AREA)
- Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
Description
本発明は、独自に設計された電極を有する超音波プローブ及びその製造方法に関する。 The present invention relates to an ultrasonic probe having a uniquely designed electrode and a method for manufacturing the same.
超音波映像装置は、広く使用されており、通常、超音波を電気的信号に変換するための超音波プローブと、その電気的信号を映像へと処理する処理装置と、その映像を表示する表示装置とを含んでいる。この超音波プローブは、高解像度映像を得るのに重要な役割を果たしており、高い電気機械的結合係数だけでなく、優れた超音波パルス及び超音波ビームのフォーカシング特性を必要とする。 Ultrasound imaging devices are widely used, and usually an ultrasound probe for converting ultrasound into an electrical signal, a processing device for processing the electrical signal into an image, and a display for displaying the image Including the device. This ultrasonic probe plays an important role in obtaining a high-resolution image and requires not only a high electromechanical coupling coefficient but also excellent ultrasonic pulse and ultrasonic beam focusing characteristics.
一般に、超音波プローブは、一対の電極を有する圧電素子からなる超音波発信／受信素子を含んでおり、その圧電素子としては、従来は、ジルコン酸チタン酸鉛系セラミックス（ＰＺＴ）が用いられていたが、最近では、ジルコニウムニオブ酸チタン酸鉛−チタン酸鉛（Ｐｂ（Ｚｎ1/3Ｎｂ2/3）Ｏ3−ＰｂＴｉＯ3、「ＰＺＮ−ＰＴ」）又はマグネシウムニオブ酸鉛−チタン酸鉛（Ｐｂ（Ｍｇ1/3Ｎｂ2/3）Ｏ3−ＰｂＴｉＯ3、「ＰＭＮ−ＰＴ」）系の圧電性単結晶が好まれるようになってきている。しかし、ＰＺＮ−ＰＴ及びＰＭＴ−ＰＴには、相転移温度が低く、熱安定性が良くないという問題がある。例えば、ＰＺＴは相転移温度が約２００〜３８５℃の範囲内にあるのに対して、０．６７ＰＭＮ−０．３３ＰＴの場合、約１５０℃で相転移現象を示す。圧電素子はその相転移温度よりも高い温度では非分極化するので、そのような圧電素子を用いた超音波プローブの製造工程は高温段階を含んではならない。 In general, an ultrasonic probe includes an ultrasonic transmission / reception element composed of a piezoelectric element having a pair of electrodes. Conventionally, lead zirconate titanate ceramic (PZT) is used as the piezoelectric element. Recently, however, lead zirconium niobate titanate-lead titanate (Pb (Zn 1/3 Nb 2/3 ) O 3 —PbTiO 3 , “PZN-PT”) or lead magnesium niobate-lead titanate ( Pb (Mg 1/3 Nb 2/3 ) O 3 —PbTiO 3 , “PMN-PT”)-type piezoelectric single crystals have come to be preferred. However, PZN-PT and PMT-PT have a problem that the phase transition temperature is low and the thermal stability is not good. For example, PZT has a phase transition temperature in the range of about 200 to 385 ° C, whereas 0.67PMN-0.33PT exhibits a phase transition phenomenon at about 150 ° C. Since a piezoelectric element becomes non-polarized at a temperature higher than its phase transition temperature, the manufacturing process of an ultrasonic probe using such a piezoelectric element should not include a high temperature stage.
従って、超音波プローブにおける電気的接続は、通常のソルダリングに比べて高温を要しないエポキシペーストによってなされている。しかし、エポキシペースト層の挿入はプローブの性能を低下させる傾向があり、それにフレキシブルプリント回路基板（ＦＰＣＢ）を接続させるには複雑な製作工程を要する。最近、エポキシペースト層の厚さを減らすために、非銀系エポキシペーストよりも優れた導電性を有する銀エポキシペーストを用いることが試みられたが、上述した低性能の問題は依然として解決されていない。 Therefore, the electrical connection in the ultrasonic probe is made by an epoxy paste that does not require a high temperature as compared with normal soldering. However, the insertion of the epoxy paste layer tends to reduce the performance of the probe, and a complicated manufacturing process is required to connect the flexible printed circuit board (FPCB) thereto. Recently, in order to reduce the thickness of the epoxy paste layer, an attempt was made to use a silver epoxy paste having a conductivity superior to that of a non-silver based epoxy paste, but the above-mentioned low-performance problem has not been solved yet. .
従って、本発明の目的は、取り付けに用いるペーストに影響を受けないように独自に設計された電極及びそれに取り付けられたＦＰＣＢを有する圧電素子を含んだ新規な超音波プローブを提供することにある。 Accordingly, an object of the present invention is to provide a novel ultrasonic probe including a piezoelectric element having an electrode uniquely designed so as not to be affected by a paste used for attachment and an FPCB attached thereto.
本発明の一側面によると、
圧電性単結晶からなり、第１主面と第２主面と第１側面と第２側面とを有する圧電素子と、
前記圧電素子の前記第１主面の相当部分と前記第１側面と前記第２主面の一部との上に堆積した第１電極及び前記圧電素子の前記第２主面の相当部分と前記第２側面と前記第１主面の一部との上に堆積した第２電極，前記第１及び第２電極は、前記圧電素子の前記第１及び第２主面上であって前記圧電素子の前記側面の辺に対してそれぞれ平行に及び前記第２及び第１側面の辺からそれぞれ所定距離だけ離れた位置に形成された２つの溝によって互いから分離されている，と、
前記圧電素子の前記第２主面上に堆積した前記電極に取り付けられたバッキング層と、
前記圧電素子の前記第１側面の位置で前記第１電極に取り付けられた接地用電極と、
前記圧電素子の前記第２側面から延び、末端部が直角に曲げられることにより、第１主面上に位置した前記溝の前で前記第２電極に取り付けられたフレキシブルプリント回路基板と
を含んだ超音波プローブが提供される。
According to one aspect of the invention,
A piezoelectric element made of a piezoelectric single crystal and having a first main surface, a second main surface, a first side surface, and a second side surface;
A first electrode deposited on a portion corresponding to the first main surface of the piezoelectric element, the first side surface, and a portion of the second main surface; a portion corresponding to the second main surface of the piezoelectric element; The second electrode deposited on the second side surface and a part of the first main surface, the first and second electrodes are on the first and second main surfaces of the piezoelectric element, and the piezoelectric element Are separated from each other by two grooves formed in parallel to the sides of the side and at a predetermined distance from the sides of the second and first sides, respectively.
A backing layer attached to the electrode deposited on the second major surface of the piezoelectric element;
A grounding electrode attached to the first electrode at the position of the first side surface of the piezoelectric element;
A flexible printed circuit board attached to the second electrode in front of the groove located on the first main surface by extending from the second side surface of the piezoelectric element and having a distal end bent at a right angle. An ultrasound probe is provided.
また、本発明の他の側面によると、
圧電素子の第１主面と第２主面と第１側面と第２側面との上に電極層を堆積させ、
前記圧電素子の前記第１及び第２主面上であって前記圧電素子の前記側面の辺に対してそれぞれ平行に及び前記圧電素子の前記第２及び第１側面の辺からそれぞれ所定距離だけ離れた位置に２つの溝を形成して、前記電極層を２つの電極へと分離し、
前記圧電素子の前記第２主面上に堆積した前記電極層にバッキング層を取り付け、
前記圧電素子の前記側面の位置で前記第１電極に接地用電極を取り付け、
フレキシブルプリント回路基板を、前記圧電素子の前記第２側面から延ばし、末端部を直角に曲げることにより、第１主面上に位置した前記溝の前で前記第２電極に取り付けること
を含んだ超音波プローブの製造方法が提供される。
According to another aspect of the present invention,
Depositing an electrode layer on the first main surface, the second main surface, the first side surface and the second side surface of the piezoelectric element;
On the first and second main surfaces of the piezoelectric element, parallel to the side of the side surface of the piezoelectric element and separated from the side of the second and first side surface of the piezoelectric element by a predetermined distance, respectively. Forming two grooves in the position, separating the electrode layer into two electrodes,
Attaching a backing layer to the electrode layer deposited on the second main surface of the piezoelectric element;
A grounding electrode is attached to the first electrode at the position of the side surface of the piezoelectric element,
Including a flexible printed circuit board attached to the second electrode in front of the groove located on the first major surface by extending a flexible printed circuit board from the second side surface of the piezoelectric element and bending the end portion at a right angle. A method of manufacturing an acoustic probe is provided.
本発明の超音波プローブは、取り付けに用いるペーストによって影響を受けない独自に設計された電極及びそれに取り付けられたＦＰＣＢを含んでいることを特徴とする。 The ultrasonic probe according to the present invention includes a uniquely designed electrode that is not affected by the paste used for attachment and the FPCB attached thereto.
超音波プローブは、一般に、圧電性単結晶からなる圧電素子と、その圧電素子の超音波発信／受信面及びこの発信／受信面の反対側面にそれぞれ形成された第１及び第２電極と、第１電極上に形成された音響整合層と、その音響整合層の全面を覆うように形成された音響レンズと、第１電極に接続された接地用電極と、第２電極に接続された信号用フレキシブルプリント回路基板とを含んだ圧電装置（超音波発信／受信素子）を含んでいる。 The ultrasonic probe generally includes a piezoelectric element made of a piezoelectric single crystal, first and second electrodes formed on an ultrasonic wave transmission / reception surface of the piezoelectric element and opposite side surfaces of the transmission / reception surface, An acoustic matching layer formed on one electrode, an acoustic lens formed to cover the entire surface of the acoustic matching layer, a grounding electrode connected to the first electrode, and a signal connected to the second electrode A piezoelectric device (ultrasonic transmission / reception element) including a flexible printed circuit board is included.
本発明による超音波プローブは、圧電素子の第１主面の相当部分と第１側面と第２主面の一部との上に第１電極が形成され、圧電素子の第２主面の相当部分と第２側面と第１主面の一部との上に第２電極が形成され、それら２つの電極は、圧電素子の第１及び第２主面上であって圧電素子の側面の辺に対してそれぞれ平行に及び第２及び第１側面の辺からそれぞれ所定距離だけ離れた位置に形成された２つの溝によって互いから分離されていることを特徴とする。 In the ultrasonic probe according to the present invention, the first electrode is formed on a portion corresponding to the first main surface of the piezoelectric element, the first side surface, and a part of the second main surface, and the corresponding portion of the second main surface of the piezoelectric element A second electrode is formed on the portion, the second side surface, and a part of the first main surface, and the two electrodes are on the first and second main surfaces of the piezoelectric element and are on sides of the side surface of the piezoelectric element. Are separated from each other by two grooves formed in parallel to each other and at a predetermined distance from the sides of the second and first side surfaces.
本発明による超音波プローブは、図２及び図３に示すように製造できる。具体的には、単結晶圧電素子又はウエハー（１０）の第１主面（１０ａ）、第２主面（１０ｂ）、第１側面（１０ｃ）及び第２側面（１０ｄ）上に電極層（２０”）を堆積させて（図２ａ参照）、コーティングされたウエハーを得る（図２ｂ参照）。 The ultrasonic probe according to the present invention can be manufactured as shown in FIGS. Specifically, the electrode layer (20 on the first main surface (10a), the second main surface (10b), the first side surface (10c), and the second side surface (10d) of the single crystal piezoelectric element or wafer (10). ”) (See FIG. 2 a) to obtain a coated wafer (see FIG. 2 b).
圧電素子は、振動方向に２０〜５００，０００μｍの範囲内の厚さを有することができ、望ましくは５０〜４００μｍの範囲内の厚さを有する。 The piezoelectric element can have a thickness in the range of 20 to 500,000 μm in the vibration direction, and preferably has a thickness in the range of 50 to 400 μm.
電極層は、Ｃｒ、Ｃｕ、Ｎｉ、Ａｕなどのような導電性金属又はこれらの組合せで構成される。電極層は、スパッタリング、電子ビーム又は熱蒸着、或いは電気メッキ法を用いて堆積させることができ、堆積した電極の厚さは、望ましくは１００〜１０，０００Åの範囲内にある。 The electrode layer is made of a conductive metal such as Cr, Cu, Ni, Au, or a combination thereof. The electrode layer can be deposited using sputtering, electron beam or thermal evaporation, or electroplating, and the thickness of the deposited electrode is desirably in the range of 100 to 10,000 mm.
図２ｃに示すように、上記の２つの溝（３０、３０’）を形成して、電極層（２０”）を、主に第１主面（１０ａ）及び第１側面（１０ｃ）上に形成された第１電極（２０）（超音波発信／受信面）と、主に第２主面（１０ｂ）及び第２側面（１０ｄ）上に形成された第２電極（２０’）（超音波発信／受信面の反対側の面）とに分離する。 As shown in FIG. 2c, the two grooves (30, 30 ′) are formed, and the electrode layer (20 ″) is formed mainly on the first main surface (10a) and the first side surface (10c). First electrode (20) (ultrasonic wave transmission / reception surface) and second electrode (20 ′) (ultrasonic wave transmission) formed mainly on the second main surface (10b) and the second side surface (10d) / Surface on the opposite side of the receiving surface).
溝（３０、３０’）は、ダイシングソーを用いて、圧電素子の側面の辺からそれぞれ所定の距離，例えば後工程で電極をフレキシブルプリント回路基板又は接地用電極に接続するためのエポキシペーストを塗布するための余地を確保できる距離，だけ離れた位置に形成される。それら溝は、それぞれ側面の辺から１〜１．５ｍｍ程度内側の位置に、ウエハー厚さの７０〜８０％の深さで形成され得るが、これは望ましくない振動を抑制するという点で好ましい。 For the grooves (30, 30 '), use a dicing saw to apply epoxy paste for connecting the electrodes to the flexible printed circuit board or the grounding electrode in a predetermined distance from the side of the side surface of the piezoelectric element. It is formed at a position separated by a distance that can secure a room for the operation. These grooves can be formed at a depth of about 70 to 80% of the wafer thickness at a position about 1 to 1.5 mm from the side of each side surface, which is preferable in terms of suppressing undesirable vibrations.
このようにして得られる組立体（１００）は、図３ａ〜３ｄに示すように、本発明の超音波プローブ製造に適用する。 The assembly (100) thus obtained is applied to the production of the ultrasonic probe of the present invention as shown in FIGS.
図３ａは、圧電素子の第２主面（１０ｂ）上に位置した電極層に、通常の方法でエポキシペーストを用いてバッキング層（４０）を取り付ける工程を示し、図３ｂは、接地用電極板（５０）と信号用フレキシブルプリント回路基板（６０）とを取り付ける段階を示している。 FIG. 3a shows a process of attaching a backing layer (40) to the electrode layer located on the second main surface (10b) of the piezoelectric element by using an epoxy paste by a normal method, and FIG. 3b shows an electrode plate for grounding. (50) and the signal flexible printed circuit board (60) are shown.
本発明によれば、図３ｂに示すように、接地用電極板（５０）は、圧電素子（１０）の第１側面（１０ｃ）の位置で第１電極（２０）に取り付けられ、フレキシブルプリント回路基板（６０）は、圧電素子の第２側面（１０ｄ）から延び、第１主面（１０ａ）の溝（３０）の前の位置で末端部分が直角に曲げられて、第２電極（２０’）に取り付けられる。 According to the present invention, as shown in FIG. 3b, the grounding electrode plate (50) is attached to the first electrode (20) at the position of the first side surface (10c) of the piezoelectric element (10). The substrate (60) extends from the second side surface (10d) of the piezoelectric element, the end portion is bent at a right angle at a position before the groove (30) of the first main surface (10a), and the second electrode (20 ′). ).
接地用電極板及びフレキシブルプリント回路基板をそれぞれ第１及び第２電極に取り付けることは、図３ｃに示すように、導電性エポキシペースト（７０），望ましくは導電性銀エポキシペースト，を用いて通常に行うことができ、上記のように曲げた末端部を用いることで電極とフレキシブルプリント回路基板との結合がより強くなる。 The attachment of the ground electrode plate and the flexible printed circuit board to the first and second electrodes, respectively, is usually done using a conductive epoxy paste (70), preferably a conductive silver epoxy paste, as shown in FIG. 3c. It can be performed, and the connection between the electrode and the flexible printed circuit board becomes stronger by using the end portion bent as described above.
その次に、図３ｄのように、圧電素子の第１主面上に堆積した電極層上に、少なくとも１つの音響整合層（８０）を形成し、その上に音響レンズを被せることができる。 Next, as shown in FIG. 3d, at least one acoustic matching layer (80) can be formed on the electrode layer deposited on the first main surface of the piezoelectric element, and an acoustic lens can be placed thereon.
本発明の方法によって製造された超音波プローブは、優れた振動特性、広周波数帯域及び高感度を示し得る。 The ultrasonic probe manufactured by the method of the present invention can exhibit excellent vibration characteristics, a wide frequency band and high sensitivity.
本発明の超音波プローブに用いられる圧電性単結晶は、強誘電性の均質単結晶であって、例えば下記式（Ｉ）の組成を有するＰＭＮ−ＰＴであるのが好ましい。 The piezoelectric single crystal used in the ultrasonic probe of the present invention is a ferroelectric homogeneous single crystal, and is preferably, for example, PMN-PT having the composition of the following formula (I).
ｘ［Ａ］ｙ［Ｂ］ｚ［Ｃ］−ｐ［Ｐ］ｎ［Ｎ］ （Ｉ）
式中、
［Ａ］はＰｂ（Ｍｇ1/3Ｎｂ2/3）Ｏ3又はＰｂ（Ｚｎ1/3Ｎｂ2/3）Ｏ3であり、
［Ｂ］はＰｂＴｉＯ3であり、
［Ｃ］はＬｉＴａＯ3であり、
［Ｐ］はＰｔ、Ａｕ、Ａｇ、Ｐｄ及びＲｈからなる群より選択される金属であり、
［Ｎ］はＮｉ、Ｃｏ、Ｆｅ、Ｓｒ、Ｓｃ、Ｒｕ、Ｃｕ及びＣｄからなる群より選択される金属の酸化物であり、
ｘは０．６５〜０．９８の範囲内の数値であり、
ｙは０．０１〜０．３４の範囲内の数値であり、
ｚは０．０１〜０．１の範囲内の数値であり、
ｐは０．０１〜５の範囲内の数値であり、
ｎは０．０１〜５の範囲内の数値である。
x [A] y [B] z [C] -p [P] n [N] (I)
Where
[A] is Pb (Mg 1/3 Nb 2/3 ) O 3 or Pb (Zn 1/3 Nb 2/3 ) O 3 ,
[B] is PbTiO 3 ,
[C] is LiTaO 3 ,
[P] is a metal selected from the group consisting of Pt, Au, Ag, Pd and Rh,
[N] is an oxide of a metal selected from the group consisting of Ni, Co, Fe, Sr, Sc, Ru, Cu and Cd,
x is a numerical value within the range of 0.65 to 0.98,
y is a numerical value within the range of 0.01 to 0.34,
z is a numerical value within the range of 0.01 to 0.1,
p is a numerical value within the range of 0.01 to 5,
n is a numerical value within the range of 0.01-5.
式（Ｉ）の単結晶は、韓国登録特許第３９２７５４号に開示された方法による固相反応後、溶融結晶化させることで製造できる。 The single crystal of the formula (I) can be produced by melt crystallization after a solid phase reaction by the method disclosed in Korean Patent No. 392754.
式（Ｉ）の圧電性単結晶は、周囲温度における約５，５００以上の高い誘電定数と、−２０〜９０℃の広い温度範囲内における低い温度係数とを有している。 The piezoelectric single crystal of formula (I) has a high dielectric constant of about 5,500 or more at ambient temperature and a low temperature coefficient within a wide temperature range of -20 to 90 ° C.
本発明の超音波プローブは、約１，０００〜１０，０００の相対誘電定数と、１，２００〜４，０００ｍ／ｓ（周波数定数：１，４００〜２，０００Ｈｚ．ｍ）の（００１）面で発散される音波の速度と、８０〜９５％の高い電気機械的結合係数（ｋ３３’）を有する。従って、本発明の超音波プローブは、医療用、軍事用及びその他産業分野で超音波診断に有利に適用され得る。 The ultrasonic probe of the present invention has a relative dielectric constant of about 1,000 to 10,000 and a (001) plane of 1,200 to 4,000 m / s (frequency constant: 1,400 to 2,000 Hz.m). And has a high electromechanical coupling coefficient (k33 ′) of 80-95%. Therefore, the ultrasonic probe of the present invention can be advantageously applied to ultrasonic diagnosis in medical, military and other industrial fields.
下記実施例は、本発明を例示する目的でのみ与えられ、発明の範囲を限定するものではない。 The following examples are given solely for the purpose of illustrating the invention and are not intended to limit the scope of the invention.
（実施例）
図２及び図３に示す工程を含んだ方法によって、本発明による図１の超音波プローブを製作した。
(Example)
The ultrasonic probe of FIG. 1 according to the present invention was manufactured by a method including the steps shown in FIGS.
２５−２０ｍｍ×１５−２０ｍｍ×０．４−０．５ｍｍの大きさ及び（００１）面（表面１０ａ）を有する圧電性単結晶基板（１０）を準備し、この基板の表面１０ａ、１０ｂ、１０ｃ及び１０ｄ上に（表面１０ｅ及び１０ｆ上を除く）、ＤＣスパッタリング法を用いて、常温、１．２×１０-7ｍｍＨｇの圧力下で、金属層（Ｃｒ／Ｃｕ／Ａｕ）（２０”）を堆積させた（図２ａ及び２ｂ参照）。
A piezoelectric single crystal substrate (10) having a size of 25-20 mm × 15-20 mm × 0.4-0.5 mm and a (001) plane (
次に、ダイシングソーを用いて、金属を堆積させた圧電性単結晶基板の表面１０ａ及び１０ｂ上にそれぞれ溝（３０、３０’）を形成して、金属層（２０”）を２つの電極（２０、２０’）に分離した。この時、溝（３０）は、表面１０ａ上に堆積させた電極層（２０”）上であって表面１０ｄの辺に対して平行に及びその辺から１−１．５ｍｍ離れた位置に形成し、溝（３０’）は、表面１０ｂ上に堆積させた電極層（２０”）上であって表面１０ｃの辺から１−１．５ｍｍ離れた位置に形成した。これら２つの溝（３０、３０’）のそれぞれの深さは０．２５−０．３５ｍｍであった。
Next, using a dicing saw, grooves (30, 30 ′) are formed on the
この圧電基板（１０）の表面１０ｂ上に堆積させた電極層上に、エポキシペーストを用いてバッキング層（４０）を積層し、この圧電基板（１０）の第１側面１０ｃに電極（２０）に接地用電極板（５０）を取り付けた。この際、圧電基板（１０）の第２側面１０ｄの溝（３０）の前部分で、電極（２０’）にフレキシブルプリント回路基板を直角に曲げて取り付けた（図３ｂ参照）。その次に、圧電基板（１０）の表面１０ａ上に堆積させた電極層上に音響整合層（８０）を積層し、その上に音響レンズを被せて図１に示す本発明の超音波プローブを製作した。
A backing layer (40) is laminated on the electrode layer deposited on the
（比較例）
分離させるべき部分（３０、３０’）上にマスキングテープを付着させた後、電極材料をコーティングし、その後、マスキングテープを除去することで２つの電極（２０、２０’）を形成したことを除き、実施例の工程を繰り返して超音波プローブを製造した。
(Comparative example)
Except that the masking tape was deposited on the part to be separated (30, 30 '), then the electrode material was coated, and then the masking tape was removed to form two electrodes (20, 20') The ultrasonic probe was manufactured by repeating the steps of the example.
振動特性
実施例及び比較例によって電極を堆積させた圧電素子の振動特性を試験し、その結果をそれぞれ図４ａ及び４ｂに示した。
Vibration characteristics The vibration characteristics of the piezoelectric elements with electrodes deposited according to the examples and comparative examples were tested, and the results are shown in FIGS. 4a and 4b, respectively.
図４ｂから、比較例による圧電素子は、点線のボックスで見られるように、望ましくない振動が発生することが分かる。これに対して、図４ａは、本発明による圧電素子では前記のような望ましくない振動が生じなかったことを示している。 From FIG. 4b, it can be seen that the piezoelectric element according to the comparative example generates undesirable vibrations as seen in the dotted box. In contrast, FIG. 4a shows that the above-described undesirable vibration did not occur in the piezoelectric element according to the present invention.
プロービング特性
パルス−エコー法を用いて実施例及び比較例で製作したプローブのプロービング特性（相対感度及び帯域幅）を測定して、その結果を下記表１に示した。
表１は、電極分離溝を有する本発明のプローブは単純分離部を有する比較例のプローブに比べて感度及び帯域幅において特性に優れていることを示している。 Table 1 shows that the probe of the present invention having the electrode separation groove is superior in sensitivity and bandwidth in comparison with the comparative probe having the simple separation portion.
以上、本発明を具体例と関連付けて記述したが、添付された請求の範囲によって限定される本発明の範疇でなくても当業者は本発明を多様に変化及び変更し得ることを認識しなければならない。 Although the present invention has been described in connection with specific examples, those skilled in the art should recognize that the present invention can be variously changed and modified without departing from the scope of the present invention limited by the appended claims. I must.
１０…圧電素子又は単結晶ウエハー、１０ａ…圧電素子の第１主面、１０ｂ…圧電素子の第２主面、１０ｃ…圧電素子の第１側面、１０ｄ…圧電素子の第２側面、２０”…電極層、２０…第１電極、２０’…第２電極、３０、３０’…溝、４０…バッキング層、５０…接地用電極板、６０…フレキシブルプリント回路基板、７０…導電性エポキシペースト、８０…音響整合層、１００…組立体。
DESCRIPTION OF
Claims (8)
（Ｂ）前記圧電素子の前記第１主面の相当部分と前記第１側面と前記第２主面の一部との上に堆積した第１電極及び前記圧電素子の前記第２主面の相当部分と前記第２側面と前記第１主面の一部との上に堆積した第２電極，前記第１及び第２電極は、前記圧電素子の前記第１及び第２主面上であって前記圧電素子の前記側面の辺に対してそれぞれ平行に及び前記第２及び第１側面の辺からそれぞれ所定距離だけ離れた位置に形成された２つの溝によって互いから分離されている，と、
（Ｃ）前記圧電素子の前記第２主面上に堆積した前記電極に取り付けられたバッキング層と、
（Ｄ）前記圧電素子の前記第１側面の位置で前記第１電極に取り付けられた接地用電極と、
（Ｅ）前記圧電素子の前記第２側面から延び、末端部が直角に曲げられることにより、第１主面上に位置した前記溝の前で前記第２電極に取り付けられたフレキシブルプリント回路基板とを含み、前記２つの溝は、前記圧電素子の総厚さの７０〜８０％の深さを有している超音波プローブ。(A) a piezoelectric element made of a piezoelectric single crystal and having a first main surface, a second main surface, a first side surface, and a second side surface;
(B) A first electrode deposited on a portion corresponding to the first main surface of the piezoelectric element, the first side surface, and a part of the second main surface, and a portion corresponding to the second main surface of the piezoelectric element. A second electrode deposited on a portion, the second side surface, and a part of the first main surface, the first and second electrodes are on the first and second main surfaces of the piezoelectric element; Separated from each other by two grooves formed in parallel to the sides of the side surface of the piezoelectric element and at a predetermined distance from the sides of the second and first side surfaces, respectively.
(C) a backing layer attached to the electrode deposited on the second main surface of the piezoelectric element;
(D) a grounding electrode attached to the first electrode at the position of the first side surface of the piezoelectric element;
(E) a flexible printed circuit board attached to the second electrode in front of the groove located on the first main surface by extending from the second side surface of the piezoelectric element and having a distal end bent at a right angle; only containing the two grooves, the piezoelectric total thickness 70-80% of which have a depth ultrasound probe device.
（Ｂ）前記圧電素子の前記第１及び第２主面上であって前記圧電素子の前記側面の辺に対してそれぞれ平行に及び前記圧電素子の前記第２及び第１側面の辺からそれぞれ所定距離だけ離れた位置に２つの溝を形成して、前記電極層を２つの電極へと分離し、
（Ｃ）前記圧電素子の前記第２主面上に堆積した前記電極層にバッキング層を取り付け、
（Ｄ）前記圧電素子の前記側面の位置で前記第１電極に接地用電極を取り付け、
（Ｅ）フレキシブルプリント回路基板を、前記圧電素子の前記第２側面から延ばし、末端部を直角に曲げることにより、第１主面上に位置した前記溝の前で前記第２電極に取り付けることを含み、前記２つの溝は、前記圧電素子の総厚さの７０〜８０％の深さに形成される超音波プローブの製造方法。(A) depositing an electrode layer on the first main surface, the second main surface, the first side surface, and the second side surface of the piezoelectric element;
(B) Predetermined on the first and second main surfaces of the piezoelectric element, parallel to the side of the side surface of the piezoelectric element and from the side of the second and first side surface of the piezoelectric element, respectively. Forming two grooves at a distance apart to separate the electrode layer into two electrodes;
(C) attaching a backing layer to the electrode layer deposited on the second main surface of the piezoelectric element;
(D) A grounding electrode is attached to the first electrode at the position of the side surface of the piezoelectric element,
(E) A flexible printed circuit board is attached to the second electrode in front of the groove located on the first main surface by extending from the second side surface of the piezoelectric element and bending the end portion at a right angle. unrealized, the two grooves, the manufacturing method of the ultrasonic probe is formed to a total thickness of 70-80% of the depth of the piezoelectric element.
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| JPS56158648A (en) * | 1980-05-09 | 1981-12-07 | Tokyo Shibaura Electric Co | Ultrasonic diagnostic apparatus |
| KR830004828A (en) * | 1981-03-31 | 1983-07-20 | 시바 쇼오이찌 | Ultrasonic Diagnostic Device |
| JPS61112500A (en) * | 1984-11-06 | 1986-05-30 | Matsushita Electric Ind Co Ltd | Ultrasonic probe |
| US5423220A (en) * | 1993-01-29 | 1995-06-13 | Parallel Design | Ultrasonic transducer array and manufacturing method thereof |
| DE4427798C2 (en) * | 1993-08-06 | 1998-04-09 | Toshiba Kawasaki Kk | Piezoelectric single crystal and its use in an ultrasonic probe and ultrasonic array probe |
| US5810009A (en) | 1994-09-27 | 1998-09-22 | Kabushiki Kaisha Toshiba | Ultrasonic probe, ultrasonic probe device having the ultrasonic probe, and method of manufacturing the ultrasonic probe |
| US5857974A (en) * | 1997-01-08 | 1999-01-12 | Endosonics Corporation | High resolution intravascular ultrasound transducer assembly having a flexible substrate |
| JP4153576B2 (en) * | 1997-11-25 | 2008-09-24 | 株式会社東芝 | Ultrasonic transducer |
| US20040054287A1 (en) * | 2002-08-29 | 2004-03-18 | Stephens Douglas Neil | Ultrasonic imaging devices and methods of fabrication |
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