JP4453847B2 - High density wiring board - Google Patents

High density wiring board Download PDF

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JP4453847B2
JP4453847B2 JP2008116133A JP2008116133A JP4453847B2 JP 4453847 B2 JP4453847 B2 JP 4453847B2 JP 2008116133 A JP2008116133 A JP 2008116133A JP 2008116133 A JP2008116133 A JP 2008116133A JP 4453847 B2 JP4453847 B2 JP 4453847B2
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wiring
teardrop
pattern
folded
wiring board
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JP2009267158A (en
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智治 渡邊
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Sumitomo Metal Mining Co Ltd
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Sumitomo Metal Mining Co Ltd
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0296—Conductive pattern lay-out details not covered by sub groups H05K1/02 - H05K1/0295

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Description

本発明は半導体素子実装用配線部品に関し、より具体的には、折り返し配線パターンを備えた配線構造を設けた高密度配線基板に関するものである。   The present invention relates to a wiring component for mounting a semiconductor element, and more specifically to a high-density wiring board provided with a wiring structure having a folded wiring pattern.

ＴＡＢテープ、フレキシブル配線基板等の半導体素子実装用配線基板に対する配線密度の高密度化が求められてから久しい。こうした要求に応えるために多くの改良が行われてきている。現在では配線幅１０μｍ、配線ピッチ２０μｍ以下という高密度配線基板が検討され、提案されている。こうした配線幅と配線ピッチのものを作製するには、セミアディティブ法が最適とされる（例えば、特許文献１参照。）。
セミアディティブ法は、絶縁フィルム上に形成された金属シード層の上にフォトレジストパターンを形成し、フォトレジストパターンの開口部に露出する金属シード層の表面に、導体金属のめっきを施すことで金属回路配線を形成し、その後フォトレジストを剥離し、除去して新たに露出した金属シード層をエッチング除去して回路配線を形成する方法である。 It has been a long time since it was required to increase the wiring density of semiconductor device mounting wiring boards such as TAB tapes and flexible wiring boards. Many improvements have been made to meet these demands. Currently, high-density wiring boards having a wiring width of 10 μm and a wiring pitch of 20 μm or less have been studied and proposed. The semi-additive method is optimal for manufacturing such a wiring width and wiring pitch (see, for example, Patent Document 1).
In the semi-additive method, a photoresist pattern is formed on a metal seed layer formed on an insulating film, and the surface of the metal seed layer exposed at the opening of the photoresist pattern is plated with a conductive metal to form a metal. In this method, circuit wiring is formed, and then the photoresist is peeled off and removed, and the newly exposed metal seed layer is removed by etching to form circuit wiring.

以下に、従来のセミアディティブ法について図１を用いて説明する。図１はセミアディティブ法の概略フローを示す図である。
先ず、図１（ａ）に示すように、ポリイミドフィルム等からなる絶縁体２上に金属層１を設けた基板材料を用いる。この金属層１として、例えば、ニッケル／クロム合金層を第１の金属層とし、銅スパッタ層を第二の金属層とするように二層構造とした２層ＣＣＬ（Copper Clad Laminate ）基材を用いても良く、絶縁フィルム表面に無電解めっきを施し、その上に電解銅めっきを施したものを用いても良い。 The conventional semi-additive method will be described below with reference to FIG. FIG. 1 is a diagram showing a schematic flow of the semi-additive method.
First, as shown to Fig.1 (a), the board | substrate material which provided the metal layer 1 on the insulator 2 which consists of a polyimide film etc. is used. As the metal layer 1, for example, a two-layer CCL (Copper Clad Laminate) substrate having a two-layer structure in which a nickel / chrome alloy layer is a first metal layer and a copper sputter layer is a second metal layer is used. It may be used, and the surface of the insulating film subjected to electroless plating and further subjected to electrolytic copper plating may be used.

次に、図１（ｂ）に示すように、前記基板材料の金属層１の表面に、ドライフィルムレジストや液状レジスト等を用いてフォトレジスト層３を形成する。使用するフォトレジストとしては、ポジ型、ネガ型のいずれでも良い。
次に、図１（ｃ）に示すように、フォトレジスト層３に所望の回路パターンを有するマスクを用いて露光・現像して、めっき用の開口部４を設ける。この際の露光条件、現像条件等は用いるフォトレジスト材料に対して最適と推奨されるものでよく、特殊な条件を用いる必要はない。
次に、図１（ｄ）に示すように、開口部４の底部に露出した金属層１の表面を陰極として電気銅メッキを施し、開口部４の内部に銅層５を析出させる。この際用いるめっき液としては、市販の硫酸銅めっき浴等で良く、めっき条件も用いる銅めっき浴に対して推奨されるものでよい。 Next, as shown in FIG. 1B, a photoresist layer 3 is formed on the surface of the metal layer 1 of the substrate material using a dry film resist, a liquid resist, or the like. The photoresist to be used may be either a positive type or a negative type.
Next, as shown in FIG. 1C, the photoresist layer 3 is exposed and developed using a mask having a desired circuit pattern to provide an opening 4 for plating. The exposure conditions, development conditions, and the like at this time may be those recommended to be optimal for the photoresist material to be used, and it is not necessary to use special conditions.
Next, as shown in FIG. 1D, electrolytic copper plating is performed using the surface of the metal layer 1 exposed at the bottom of the opening 4 as a cathode, and a copper layer 5 is deposited inside the opening 4. The plating solution used at this time may be a commercially available copper sulfate plating bath or the like, and may be recommended for a copper plating bath that also uses plating conditions.

次に、図１（ｅ）に示すように、残存するフォトレジスト層を除去する。除去に際して採用される条件は、用いたフォトレジスト材料に対して推奨される条件でよい。
次に、図１（ｆ）に示すように、フォトレジスト層除去に伴って新たに露出した金属層１をエッチングして除去し、配線部６を完成させる。
このようにして得られたフレキシブル配線基板２０は、金属層と絶縁体フィルムとの境界面に接着剤を介すことが無いため、回路接着強度の熱的信頼性と回路間電気絶縁性に優れたものとなる利点がある。
特開２００６−２４９０２号公報 Next, as shown in FIG. 1E, the remaining photoresist layer is removed. The conditions employed for removal may be those recommended for the photoresist material used.
Next, as shown in FIG. 1F, the newly exposed metal layer 1 is removed by etching as the photoresist layer is removed to complete the wiring portion 6.
The flexible wiring board 20 obtained in this way is excellent in thermal reliability of circuit bonding strength and inter-circuit electrical insulation because no adhesive is interposed on the interface between the metal layer and the insulator film. There is an advantage to become.
JP 2006-24902 A

前記したように現在検討され、提案されている配線幅が１０μｍ、配線幅と配線間のスペースの幅を足した配線ピッチが２０μｍ以下の高密度配線基板を得るには、確かにセミアディティブ法は有効といえる。しかし、このように配線間隔が狭くなると思わぬ問題が起きる。
具体的は、図２に示すように、回路配線７の一端にコの字型の折り返し配線パターン８が存在すると、コの字型の折り返し配線パターン８の屈曲部９内側でフォトレジスト層の剥離が不十分となることがある。コの字型の折り返し配線パターン８の屈曲部９内側にフォトレジストが残存した場合には、このフォトレジストは異物不良の原因となり、金属層１の除去が不完全となり、回路配線７の形状不良を引き起こす。
本発明は、こうした新たな問題を解消しうる配線構造を備えた高密度配線基板の提供を課題とする。 As described above, in order to obtain a high-density wiring board having a wiring width of 10 μm and a wiring pitch of 20 μm or less obtained by adding the wiring width and the width of the space between the wirings, It can be said that it is effective. However, an unexpected problem occurs when the wiring interval becomes narrow in this way.
Specifically, as shown in FIG. 2, when the U-shaped folded wiring pattern 8 exists at one end of the circuit wiring 7, the photoresist layer is peeled inside the bent portion 9 of the U-shaped folded wiring pattern 8. May be insufficient. If the photoresist remains inside the bent portion 9 of the U-shaped folded wiring pattern 8, the photoresist causes a foreign matter defect, the removal of the metal layer 1 is incomplete, and the circuit wiring 7 has a defective shape. cause.
An object of the present invention is to provide a high-density wiring board having a wiring structure that can solve such a new problem.

上記課題を解決する本発明は、折り返し配線パターンを備えた高密度配線基板において、前記折り返し配線パターンの屈曲部内側に、該折り返し配線パターンの屈曲部近傍の配線間隔より大きい最大幅径を有するティアドロップ形状溝を設けた高密度配線基板とした。   The present invention that solves the above-described problems is a high-density wiring board having a folded wiring pattern, and has a tier having a maximum width inside the bent portion of the folded wiring pattern that is larger than the wiring interval in the vicinity of the bent portion of the folded wiring pattern. A high-density wiring board provided with drop-shaped grooves was obtained.

本発明においては、例えば前記ティアドロップ形状溝の最大幅径が、前記折り返し配線パターンの屈曲部近傍の配線間隔の２倍以内であり、且つ、前記ティアドロップ形状溝のティアドロップ角度が３０°〜６０°の範囲にある高密度配線基板とすることができる。
また、前記ティアドロップ形状溝の最大縦径は、前記折り返し配線パターンの屈曲部の縦長さの１／２以内であることを特徴とする。 In the present invention, for example, the maximum width diameter of the teardrop-shaped groove is within twice the wiring interval near the bent portion of the folded wiring pattern, and the teardrop angle of the teardrop-shaped groove is 30 ° to A high-density wiring board in a range of 60 ° can be obtained.
Further, the maximum vertical diameter of the teardrop-shaped groove is within ½ of the vertical length of the bent portion of the folded wiring pattern.

本発明によれば、高密度配線基板の折り返し配線パターンの屈曲部において、配線間に存在するフォトレジスト層の剥離性が向上し、金属シード層除去の不完全に起因する不良率が低減する。   According to the present invention, in the bent portion of the folded wiring pattern of the high-density wiring board, the peelability of the photoresist layer existing between the wirings is improved, and the defect rate due to the incomplete removal of the metal seed layer is reduced.

本発明は、セミアディティブ法により高密度配線基板を形成するに際して、高密度配線の折り返し屈曲部を有する配線において、折り返し配線パターンの屈曲部内側にティアドロップ形状（涙滴形状）溝を設けることにより、該折り返し配線パターン部の配線間に存在するフォトレジスト層の流れ易さを確保し、しかも剥離性を改良して健全な回路配線を形成するものである。   When forming a high-density wiring board by a semi-additive method, the present invention provides a teardrop-shaped (teardrop-shaped) groove inside the bent portion of the folded wiring pattern in the wiring having the folded bent portion of the high-density wiring. Thus, it is possible to ensure the ease of flow of the photoresist layer existing between the wirings of the folded wiring pattern portion, and to improve the peelability to form a sound circuit wiring.

以下、本発明を図により説明する。
図３は本発明の配線構造の１例を示した図であり、２本の配線７，７がごく狭い間隔ｄを保って並行に形成されており、その配線の一端はティアドロップ（涙滴）形状溝を有する屈曲部の一端と繋がっている。その結果、２本の配線７，７の屈曲部１１内側には、間隔ｄの２倍の最大幅径（ｗ）を有するティアドロップ（涙滴）形状溝が設けられることとなる。ここで、ｗはこのティアドロップ形状溝の一部又は全部を構成する円、又は楕円、略楕円の最大幅径であり、図３において
ｗ＝２ｄ・・・（１）
の関係になっている。
尚、本明細書においては、上記配線７の一端とティアドロップ（涙滴）形状の一端との不連続点ｍと該ティアドロップ形状溝の最大幅径との交点ｎとを結ぶ直線Ｌ１（ｍ１−ｎ１）、Ｌ２（ｍ２−ｎ２）のなす角度θをティアドロップ角度と定義する。
そして、ティアドロップ角度θは２本の配線７，７の間隔ｄに従って３０度から６０度程度の間で適宜選択すればよい。
ここで、ティアドロップ角度θを３０度から６０度の範囲としたのは、ティアドロップ角度θが３０度未満では、ティアドロップの最大幅径を十分に保てず、フォトレジストの剥離性を十分に保てないため好ましくなく、また、ティアドロップ角度θが６０度を超えると、２本の配線７，７からティアドロップ溝へと繋がる形状が著しく変化するため、フォトレジストがティアドロップ近傍で切断され、逆に剥離性が悪くなるため好ましくないからである。
また、ティアドロップ形状溝の最大幅径が折り返し配線パターンの屈曲部近傍の配線間隔の２倍以内であるとしたのは、２倍を超えると、最終的に形成される配線は幅が狭くなり、配線の断線不良へと繋がるため好ましくないからである。
このように、２本の配線７，７の屈曲部内側をこの程度の丸みを帯びたティアドロップ形状溝に形成しておけば、アディティブ法で回路配線を形成する場合にも、配線間に存在するフォトレジスト層の剥離性が向上し、金属シード層の不完全な除去を防ぐことができ、金属シード層に起因する回路の不良率が低減する。 The present invention will be described below with reference to the drawings.
FIG. 3 is a diagram showing an example of the wiring structure of the present invention. Two wirings 7 and 7 are formed in parallel with a very small distance d, and one end of the wiring is a teardrop (tears drop). ) It is connected to one end of a bent portion having a shape groove. As a result, a teardrop-shaped groove having a maximum width diameter (w) twice the interval d is provided inside the bent portion 11 of the two wires 7 and 7. Here, w is a maximum width diameter of a circle, an ellipse, or a substantially ellipse constituting a part or all of the teardrop-shaped groove.
w = 2d (1)
It has become a relationship.
In the present specification, a straight line L1 (m) that connects the discontinuity point m between one end of the wiring 7 and one end of a teardrop shape and the intersection point n of the maximum width diameter of the teardrop-shaped groove. The angle θ formed by 1 −n 1 ) and L2 (m 2 −n 2 ) is defined as a tear drop angle.
The tear drop angle θ may be appropriately selected between about 30 degrees and 60 degrees according to the distance d between the two wires 7 and 7.
Here, the teardrop angle θ is set in the range of 30 degrees to 60 degrees. If the teardrop angle θ is less than 30 degrees, the maximum width of the teardrop cannot be maintained sufficiently, and the photoresist peelability is sufficient. It is not preferable because it cannot be maintained at the same temperature, and when the teardrop angle θ exceeds 60 degrees, the shape connecting the two wirings 7 and 7 to the teardrop groove changes significantly, so that the photoresist is cut near the teardrop. On the contrary, it is not preferable because the peelability deteriorates.
In addition, the maximum width diameter of the teardrop-shaped groove is assumed to be within twice the wiring interval in the vicinity of the bent portion of the folded wiring pattern. If it exceeds twice, the finally formed wiring becomes narrower This is because it leads to a disconnection failure of the wiring.
In this way, if the inner side of the bent portion of the two wirings 7 and 7 is formed in such a rounded teardrop groove, even when circuit wiring is formed by the additive method, it exists between the wirings. The peelability of the photoresist layer to be improved is improved, the incomplete removal of the metal seed layer can be prevented, and the defect rate of the circuit due to the metal seed layer is reduced.

図４は本発明の高密度配線基板の他の１例を示した図であり、図３と同様に２本の配線７，７がごく狭い間隔ｄを保って並行に形成されており、ティアドロップ角度θが３０度のティアドロップ形状溝が設けられている。
こうした配線構造を取ることにより、高密度配線基板の折り返しパターン部を構成する配線間にあるフォトレジストの剥離性が向上し、金属シード層の除去も容易となり、金属シード層残渣による回路の不良率が低減する。 FIG. 4 is a view showing another example of the high-density wiring board of the present invention. Like FIG. 3, two wirings 7 and 7 are formed in parallel with a very small distance d, and the tear A teardrop groove having a drop angle θ of 30 degrees is provided.
By adopting such a wiring structure, the releasability of the photoresist between the wirings constituting the folded pattern portion of the high-density wiring board is improved, the metal seed layer can be easily removed, and the defect rate of the circuit due to the metal seed layer residue. Is reduced.

本実施例においては、図１に示す工程に従ってアディティブ法により高密度配線を作成した。
本実施例においては、厚さ３８μｍのポリイミドフィルムからなる絶縁体上に、スパッタリング法で厚さ１７０Åのニッケル／クロム金属層を形成し、その上に厚さ０．１μｍの銅スパッタ層を形成した２層ＣＣＬ基材を使用した。
先ず、前記基材の銅スパッタ層の表面にドライフィルムレジスト（品名ＲＹ−３２１５：日立化成（株）製）をラミネートした。
次に照度４０ｍＪで露光し、温度３０℃の１％炭酸ナトリウム水溶液にフォトレジストフィルムを接触させて現像を行い、フォトレジスト回路パターンの形成を行った。このとき露光パターンマスクは、ラインスペース幅；１４μｍで、折り返し配線パターンの屈曲部内側に図３に示すような最大幅径２８μｍでティアドロップ角度が６０°のティアドロップ形状を有するものを使用した。 In this example, high-density wiring was formed by the additive method according to the process shown in FIG.
In this example, a nickel / chromium metal layer having a thickness of 170 mm was formed by sputtering on an insulator made of a polyimide film having a thickness of 38 μm, and a copper sputter layer having a thickness of 0.1 μm was formed thereon. A two-layer CCL substrate was used.
First, a dry film resist (product name RY-3215: manufactured by Hitachi Chemical Co., Ltd.) was laminated on the surface of the copper sputter layer of the base material.
Next, exposure was performed at an illuminance of 40 mJ, and development was performed by bringing a photoresist film into contact with a 1% aqueous sodium carbonate solution at a temperature of 30 ° C. to form a photoresist circuit pattern. At this time, an exposure pattern mask having a line space width of 14 μm and a tear drop shape having a maximum width diameter of 28 μm and a tear drop angle of 60 ° as shown in FIG. 3 inside the bent portion of the folded wiring pattern was used.

次に市販の硫酸銅めっき浴を用い、厚さ約１３μｍの銅めっきを行なった。その後、ドライフィルムレジストを濃度５％の水酸化ナトリウム水溶液を用いて剥離除去した。
次に各配線間にドライフィルムレジストが残存していないかどうかを顕微鏡観察により確認した。その結果、各配線間にドライフィルムレジストは残存していなかった。
次に主成分が硫酸及び過酸化水素からなるソフトエッチング液（品名ＣＰＥ８００：菱江化学（株）製）を用いて、温度３０℃、圧力０．１ＭＰａの条件で約３０秒間スプレー処理を行った。
次いで、露出したニッケル／クロム合金層を市販のニッケル／クロム選択エッチング液（品名ＣＨ１９２０：メック（株）製）を用いて温度４０℃で２秒間浸漬して、ニッケル／クロム金属層を除去した。
得られたフレキシブル配線基板の配線部にドライフィルムレジスト剥離不良に由来する異常は見られず、回路特性も良好なものであった。 Next, copper plating having a thickness of about 13 μm was performed using a commercially available copper sulfate plating bath. Thereafter, the dry film resist was peeled off using a 5% concentration sodium hydroxide aqueous solution.
Next, whether or not the dry film resist remained between the wirings was confirmed by microscopic observation. As a result, no dry film resist remained between the wirings.
Next, spray treatment was performed for about 30 seconds under conditions of a temperature of 30 ° C. and a pressure of 0.1 MPa using a soft etching solution (product name: CPE800, manufactured by Hishoe Chemical Co., Ltd.) consisting mainly of sulfuric acid and hydrogen peroxide.
Next, the exposed nickel / chromium alloy layer was immersed for 2 seconds at a temperature of 40 ° C. using a commercially available nickel / chromium selective etching solution (product name: CH1920, manufactured by MEC Co., Ltd.) to remove the nickel / chromium metal layer.
No abnormality derived from dry film resist peeling failure was found in the wiring portion of the obtained flexible wiring board, and the circuit characteristics were also good.

折り返しパターン部が図４のような構造、すなわちラインスペース幅；１４μｍで、折り返しパターンの屈曲部内側に最大幅径２８μｍ、ティアドロップ角度が３０°のティアドロップ形状を持つマスクを用いた以外は、実施例１と同様にしてフレキシブル配線基板を製造した。
得られたフレキシブル配線基板の配線部にドライフィルムレジスト剥離不良に由来する異常は見られず、回路特性も良好なものであった。 The folded pattern portion has a structure as shown in FIG. 4, that is, a line space width of 14 μm, and a mask having a tear drop shape with a maximum width of 28 μm and a tear drop angle of 30 ° inside the bent portion of the folded pattern is used. A flexible wiring board was manufactured in the same manner as in Example 1.
No abnormality derived from dry film resist peeling failure was found in the wiring portion of the obtained flexible wiring board, and the circuit characteristics were also good.

（比較例）
折り返しパターン部が図２のような従来のコの字型折り返しパターンを有するマスクを用いた以外は実施例１と同様にしてフレキシブル配線基板を製造した。
得られたフレキシブル配線基板の配線部にドライフィルムレジスト剥離不良に由来する異常が複数箇所みられ、回路特性は良好なものとならなかった。 (Comparative example)
A flexible wiring board was manufactured in the same manner as in Example 1 except that a mask having a conventional U-shaped folded pattern as shown in FIG.
In the wiring portion of the obtained flexible wiring board, a plurality of abnormalities derived from dry film resist peeling failure were observed, and the circuit characteristics were not good.

セミアディティブ法の概略フローを示す図である。It is a figure which shows the schematic flow of a semi-additive method. 従来のコの字型折り返しパターンの一例を示した図である。It is the figure which showed an example of the conventional U-shaped folding pattern. 本発明の配線の折り返しパターンの一例を示す図である。It is a figure which shows an example of the return pattern of the wiring of this invention. 本発明の配線の折り返しパターンの他の例を示す図である。It is a figure which shows the other example of the return pattern of the wiring of this invention.

符号の説明Explanation of symbols

１ 金属層
２ 絶縁体
３ フォトレジスト層
４ 開口部
５ 銅層
６ 配線部
７ 回路配線
８ コの字型折り返しパターン
９ コの字型折り返しパターンの屈曲部
１０ ティアドロップ形状パターン
１１ ティアドロップ形状パターンの屈曲部
ｄ 配線間隔
ｗ ティアドロップ形状溝の最大幅径 DESCRIPTION OF SYMBOLS 1 Metal layer 2 Insulator 3 Photoresist layer 4 Opening part 5 Copper layer 6 Wiring part 7 Circuit wiring 8 U-shaped folding pattern 9 Bending part of U-shaped folding pattern 10 Teardrop shape pattern 11 Teardrop shape pattern Bending part d Wiring interval w Maximum diameter of teardrop groove

Claims (3)

折り返し配線パターンを備えた高密度配線基板において、前記折り返し配線パターンの屈曲部内側に、該折り返し配線パターンの屈曲部近傍の配線間隔より大きい最大幅径を有するティアドロップ形状溝を設けたことを特徴とする高密度配線基板。   In the high-density wiring board provided with the folded wiring pattern, a teardrop-shaped groove having a maximum width diameter larger than a wiring interval in the vicinity of the bent portion of the folded wiring pattern is provided inside the bent portion of the folded wiring pattern. High density wiring board. 前記ティアドロップ形状溝の最大幅径が、前記折り返し配線パターンの屈曲部近傍の配線間隔の２倍以内であり、且つ、前記ティアドロップ形状溝のティアドロップ角度が３０°〜６０°の範囲にあることを特徴とする請求項１に記載の高密度配線基板。   The maximum width of the teardrop-shaped groove is within twice the wiring interval in the vicinity of the bent portion of the folded wiring pattern, and the teardrop angle of the teardrop-shaped groove is in the range of 30 ° to 60 °. The high-density wiring board according to claim 1. 前記ティアドロップ形状溝の最大縦径が、前記折り返し配線パターンの屈曲部の縦長さの１／２以内であることを特徴とする請求項１に記載の高密度配線基板。   2. The high-density wiring board according to claim 1, wherein a maximum vertical diameter of the teardrop-shaped groove is within ½ of a vertical length of a bent portion of the folded wiring pattern.
JP2008116133A 2008-04-25 2008-04-25 High density wiring board Active JP4453847B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2008116133A JP4453847B2 (en) 2008-04-25 2008-04-25 High density wiring board
TW098107626A TWI388254B (en) 2008-04-25 2009-03-10 High density wiring board
KR1020090020800A KR101049208B1 (en) 2008-04-25 2009-03-11 High density wiring board

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008116133A JP4453847B2 (en) 2008-04-25 2008-04-25 High density wiring board

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JP4453847B2 true JP4453847B2 (en) 2010-04-21

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Publication number Priority date Publication date Assignee Title
CN102510676B (en) * 2011-10-20 2013-11-27 东莞生益电子有限公司 Method for adding teardrop in printed circuit board (PCB) during computer aided manufacturing (CAM)

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JP2006024902A (en) 2004-06-07 2006-01-26 Shinko Electric Ind Co Ltd Manufacturing method of wiring board having extra-fine line pattern, and the wiring board

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KR20090113180A (en) 2009-10-29
TW201002163A (en) 2010-01-01
KR101049208B1 (en) 2011-07-14
TWI388254B (en) 2013-03-01

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