JP4436968B2 - 電気活性点を有する炭素の製造方法 - Google Patents

電気活性点を有する炭素の製造方法 Download PDF

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Publication number
JP4436968B2
JP4436968B2 JP2000537223A JP2000537223A JP4436968B2 JP 4436968 B2 JP4436968 B2 JP 4436968B2 JP 2000537223 A JP2000537223 A JP 2000537223A JP 2000537223 A JP2000537223 A JP 2000537223A JP 4436968 B2 JP4436968 B2 JP 4436968B2
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carbon
energy
irradiation
diamond
mev
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Expired - Fee Related
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JP2000537223A
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English (en)
Japanese (ja)
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JP2002507732A5 (enExample
JP2002507732A (ja
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セルスチョップ、ジャック、ピエール、フリードリッヒ
キエンレ、パウル
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    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21G—CONVERSION OF CHEMICAL ELEMENTS; RADIOACTIVE SOURCES
    • G21G1/00—Arrangements for converting chemical elements by electromagnetic radiation, corpuscular radiation or particle bombardment, e.g. producing radioactive isotopes
    • G21G1/04—Arrangements for converting chemical elements by electromagnetic radiation, corpuscular radiation or particle bombardment, e.g. producing radioactive isotopes outside nuclear reactors or particle accelerators
    • G21G1/12—Arrangements for converting chemical elements by electromagnetic radiation, corpuscular radiation or particle bombardment, e.g. producing radioactive isotopes outside nuclear reactors or particle accelerators by electromagnetic irradiation, e.g. with gamma or X-rays
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/901—Manufacture, treatment, or detection of nanostructure having step or means utilizing electromagnetic property, e.g. optical, x-ray, electron beamm

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Battery Electrode And Active Subsutance (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Luminescent Compositions (AREA)
JP2000537223A 1998-03-17 1999-03-16 電気活性点を有する炭素の製造方法 Expired - Fee Related JP4436968B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
ZA982242 1998-03-17
ZA98/2242 1998-03-17
PCT/IB1999/000425 WO1999048107A1 (en) 1998-03-17 1999-03-16 Method of producing carbon with electrically active sites

Publications (3)

Publication Number Publication Date
JP2002507732A JP2002507732A (ja) 2002-03-12
JP2002507732A5 JP2002507732A5 (enExample) 2006-05-11
JP4436968B2 true JP4436968B2 (ja) 2010-03-24

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ID=25586903

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JP2000537223A Expired - Fee Related JP4436968B2 (ja) 1998-03-17 1999-03-16 電気活性点を有する炭素の製造方法

Country Status (7)

Country Link
US (1) US6563123B1 (enExample)
EP (1) EP1062669B1 (enExample)
JP (1) JP4436968B2 (enExample)
AT (1) ATE256911T1 (enExample)
AU (1) AU3268199A (enExample)
DE (1) DE69913668T2 (enExample)
WO (1) WO1999048107A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3854072B2 (ja) * 2001-01-11 2006-12-06 独立行政法人科学技術振興機構 半導体基板への不純物ドーピング方法及びそれによって製造される半導体基板
US8557685B2 (en) * 2008-08-07 2013-10-15 Sandisk 3D Llc Memory cell that includes a carbon-based memory element and methods of forming the same
JP5554449B2 (ja) 2010-06-03 2014-07-23 エレメント シックス リミテッド ダイヤモンド工具
JP6429451B2 (ja) * 2013-11-20 2018-11-28 株式会社日立製作所 放射性核種製造システムおよび放射性核種製造方法
JP6602530B2 (ja) * 2014-07-25 2019-11-06 株式会社日立製作所 放射性核種製造方法及び放射性核種製造装置
WO2017115430A1 (ja) * 2015-12-28 2017-07-06 公立大学法人兵庫県立大学 放射性廃棄物の処理方法
NL2021956B1 (en) * 2018-11-08 2020-05-15 Univ Johannesburg Method and system for high speed detection of diamonds
WO2023228702A1 (ja) * 2022-05-26 2023-11-30 克弥 西沢 導線、伝送装置、宇宙太陽光エネルギー輸送方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE537440A (enExample) * 1954-04-19
GB8604583D0 (en) * 1986-02-25 1986-04-03 Atomic Energy Authority Uk Photonuclear doping of semiconductors
US4749869A (en) * 1986-05-14 1988-06-07 Anil Dholakia Process for irradiating topaz and the product resulting therefrom
US5084909A (en) * 1990-03-23 1992-01-28 Pollak Richard D Method of processing gemstones to enhance their color
GB9021689D0 (en) 1990-10-05 1990-11-21 De Beers Ind Diamond Diamond neutron detector
EP1097107B1 (en) * 1998-06-24 2006-03-01 Jacques Pierre Friedrich Sellschop A method of altering the colour of a material

Also Published As

Publication number Publication date
AU3268199A (en) 1999-10-11
WO1999048107A1 (en) 1999-09-23
DE69913668D1 (de) 2004-01-29
DE69913668T2 (de) 2005-01-13
US6563123B1 (en) 2003-05-13
ATE256911T1 (de) 2004-01-15
JP2002507732A (ja) 2002-03-12
EP1062669B1 (en) 2003-12-17
EP1062669A1 (en) 2000-12-27

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