JP4430472B2 - Semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To realize a semiconductor device with improved resistance to partial discharge and dielectric breakdown. <P>SOLUTION: The semiconductor device has a resin case including a threaded hole, an insulation substrate with a semiconductor chip mounted, a heatsink including a heatsink through hole and having the insulation substrate mounted, and a metallic tapping screw passing through the heatsink through hole and the threaded hole to have the resin case engaged with the heatsink. A void in the threaded hole formed between the resin case and the metallic tapping screw is filled with a resin having high withstand voltage. <P>COPYRIGHT: (C)2006,JPO&amp;NCIPI

Description

  The present invention relates to a semiconductor device, and more particularly to a power semiconductor device for controlling an electronic device using a large current such as a motor or a heater.

  Although the power semiconductor device (power module) according to the prior art is not shown in detail here, the insulating substrate on which the semiconductor chip is mounted, the heat sink on which the insulating substrate is mounted, and an adhesive around the heat sink It has a joined resin case and a plurality of main electrodes extending from the top to the inside (downward) of the resin case. Further, the resin case is fixed to the heat sink by inserting the metal tapping screw from below the heat sink toward the inside of the resin case.

  In general, in a power semiconductor device (power module) that controls high power (large current), a withstand voltage that exceeds a predetermined withstand voltage between a main electrode (charging part), a heat sink, and a metal tapping screw (grounding part) It is necessary to satisfy the condition regarding the partial discharge withstand voltage at the actual operating voltage, which is an index of insulation deterioration.

  However, according to the conventional power modules, as described above, the main electrode (charging part) extends downward from above, while the metal tapping screw (grounding part) extends upward from below. In particular, a strong electric field may be generated between the tip of the metal tapping screw and the main electrode.

  Further, when the resin case is fixed to the heat radiating plate using the tapping screw, that is, when the tapping screw is drilled in the screw hole of the resin case, the wall portion of the screw hole is scraped to generate resin waste. It is necessary to provide a gap for absorbing the resin waste in the screw hole in the vicinity of the tip of the tapping screw. However, when a strong electric field is generated in such voids, the partial discharge withstand capability may be lower (partial discharge may occur).

For example, in the semiconductor device described in Japanese Patent Laid-Open No. 5-190695, since the tapping screw 3 is close to the main electrode laid on the upper plate portion 12, the electric field in the lower hole 4 may be significantly increased. there were. In addition, since a gap is formed in the pilot hole 4 between the tapping screw 3 and the main electrode, a sufficient partial discharge resistance may not be obtained.
Japanese Patent Laid-Open No. 5-190695

  Therefore, an object of the present invention is to realize a semiconductor device having improved partial discharge resistance and dielectric breakdown resistance.

According to one aspect of the present invention, a resin case including a screw hole, an insulating substrate on which a semiconductor chip is mounted, a heat dissipation plate including the heat dissipation plate through hole, and the heat dissipation plate through hole And a metal tapping screw that passes through the screw hole and engages the resin case with the heat radiating plate, in the screw hole formed between the resin case and the metal tapping screw. The void is filled with an insulating resin .

  According to the present invention, the partial discharge withstand voltage between the charging portion such as the main electrode and the grounding portion such as the metal tapping screw can be improved by the high withstand voltage resin.

  Embodiments of a semiconductor device according to the present invention will be described below with reference to the accompanying drawings. In the description of each embodiment, terms for indicating directions (for example, “left side”, “right side”, “upward”, “downward”, etc.) are used as appropriate for easy understanding. These terms are not intended to limit the invention.

Embodiment 1 FIG.
A first embodiment of a semiconductor device (power device) according to the present invention will be described below with reference to FIGS. A power device 1 shown in FIG. 1 generally includes a resin case 10 made of an insulating material such as resin, and an emitter main electrode 14 and a collector main electrode 16 disposed on a main surface 12 thereof. In addition, as shown in FIG. 2, the power device 1 includes a heat sink 20 and an insulating substrate 30 mounted on the heat sink 20 in an internal space surrounded by the resin case 10. The heat sink 20 is made of a metal such as copper having good thermal conductivity, and the insulating substrate 30 is a front electrode pattern and a back electrode pattern (made of a metal such as copper or aluminum bonded to the upper and lower surfaces thereof by a brazing material. (Both not shown). Similarly, a power semiconductor chip 32 such as an IGBT chip is mounted on the surface electrode pattern of the insulating substrate 30 via solder.

  As shown in FIGS. 2 and 3, the emitter main electrode 14 extends from the main surface 12 of the power device 1 to the inside (downward) and is electrically connected to the surface electrode pattern of the insulating substrate 30b in the center of FIG. Connected. The emitter terminals (not shown) of the semiconductor chip 32 on the insulating substrates 30a and 30c on both sides in the figure are electrically connected to the emitter main electrode 14 via the aluminum wire 34 (and the insulating substrate 30b). ing. On the other hand, the collector main electrode 16 is behind the emitter main electrode 14 as shown by the broken line in FIG. 3, and similarly extends from the main surface 12 of the power device 1 to the inside thereof, and on both sides of FIG. It is electrically connected to the surface electrode patterns of certain insulating substrates 30a and 30c by solder.

  As shown in FIG. 2, the heat sink 20 has a heat sink through hole 40, and the resin case 10 has a screw hole 50. The power device 1 has a metal tapping screw 60 that passes through the radiator plate through hole 40 and the screw hole 50 and fixes (engages) the resin case 10 to the radiator plate 20. That is, the resin case 10 is fixed to the heat sink 20 by tightening the resin case 10 with the metal tapping screw 60 from the lower side to the upper side of the heat sink plate through hole 40. At this time, it is preferable to apply an adhesive resin 22 (FIG. 4) between the resin case 10 and the heat radiating plate 20 in order to fix it more reliably.

  Further, the resin case 10 has a bush through hole for attaching the resin case 10 fixed to the heat radiating plate 20 to a heat radiating fin (not shown) disposed below the resin case 10 at the peripheral corner shown in FIG. 26.

  As described above, generally, when the resin case 10 is fixed to the heat sink 20 using the metal tapping screw 60, the metal tapping screw 60 enters the screw hole 50 from below to above (screwed). As resin waste is formed at the tip of the metal tapping screw 60, it is necessary to provide a gap in the screw hole 50 near the tip of the metal tapping screw 60 in order to absorb this. Such a gap in the screw hole 50 may reduce the partial discharge resistance as described above.

  However, according to the semiconductor device 1 of the first embodiment of the present invention, as shown particularly in the enlarged view of FIG. 4, a high voltage resin 70 (withstand voltage of, for example, silicone rubber or epoxy resin) is formed in this gap. 20 kV or more). That is, after the metal tapping screw 60 is tightened with the liquid high withstand voltage resin 70 injected, the high withstand voltage resin 70 is cured. At this time, the adhesive resin 22 disposed between the resin case 10 and the heat radiating plate 20 has not only an adhesive function but also a high withstand voltage resin 70 so that the liquid high withstand voltage resin does not leak to the heat radiating plate side. It performs a sealing function for sealing.

Therefore, since the high withstand voltage resin 70 is filled in the gap near the tip 62 of the metal tapping screw 60, the tip 62 of the metal tapping screw 60 is close to the emitter main electrode 14 and the collector main electrode 16. Even when it is provided, the partial discharge withstand voltage and the dielectric breakdown resistance can be improved. Further, since no gap is formed at the tip 62 of the metal tapping screw 60, the partial discharge withstand voltage can be further improved.
Further, the high withstand voltage resin 70 is preferably defoamed before being injected into the gap, and the gap is uniformly filled without leaving bubbles in the high withstand voltage resin 70, and the partial discharge resistance Can be further improved.

  After fixing the resin case 10 to the heat radiating plate 20, a defoamed silicone gel 36 is formed in the internal space of the power device 1 surrounded by the resin case 10 and the heat radiating plate 20, the insulating substrate 30, the power semiconductor chip 32, And it fills so that the aluminum wire 34 may be covered, and also the epoxy resin 38 is filled on it. 2 to 4, the hatching of the silicone gel 36 and the epoxy resin 38 is omitted for easy understanding of the drawings, and the boundary lines thereof are indicated by alternate long and short dash lines.

  In addition, in the power device 1 configured as described above, the emitter main electrode 14, the collector main electrode 16, the surface electrode pattern, and the aluminum wire 34 constitute a charging unit, and the heat sink 20, the metal tapping screw 60. The back electrode pattern constitutes a grounding portion. Therefore, it is more preferable that the high withstand voltage resin 70 is filled not only in the front end portion 62 of the metal tapping screw 60 but also in the entire gap formed between the resin case 10 and the metal tapping screw 60.

Embodiment 2. FIG.
Next, a power device according to a second embodiment of the present invention will be described below with reference to FIG. The power device 2 shown in FIG. 5 has a metal tapping screw having a coating made of a high withstand voltage resin instead of being filled with a high withstand voltage resin, and the void in the screw hole is filled with the high withstand voltage resin. Since it has the same configuration as that of the first embodiment except for the point that is not performed, detailed description regarding the overlapping part is omitted.

  According to the power device 2 of FIG. 5, as described above, the metal tapping screw 60 has the coating (coating film) 64 made of high withstand voltage resin. The coating 64 on the metal tapping screw 60 can be formed by any method. For example, the coating 64 is formed by immersing the metal tapping screw 60 in a liquid high withstand voltage resin and then curing it. May be. Thus, the resin case 10 is fixed to the heat sink 20 using the metal tapping screw 60 coated with the high withstand voltage resin as a whole.

As a result, since the metal tapping screw 60 is insulated from the heat sink 20 by the coating 64, the metal tapping screw 60 no longer constitutes a grounding portion. Even if the head 66 of the metal tapping screw 60 is exposed from the coating 64 and has the same potential as the heat sink 20, the tip 62 of the metal tapping screw 60 is entirely made of high withstand voltage resin. Therefore, it is possible to improve the partial discharge tolerance between the charged portion such as the emitter main electrode 14.
Further, the process of forming the coating 64 made of the high withstand voltage resin on the metal tapping screw 60 is simpler than the operation of injecting the high withstand voltage resin into the gap and curing it, as described in the first embodiment. Therefore, the number of man-hours can be eliminated compared with the first embodiment, and the assembly workability can be improved.

Embodiment 3 FIG.
A third embodiment of the power device according to the present invention will be described below with reference to FIG. Since the power device 3 shown in FIG. 6 has the same configuration as that of the first embodiment except that the screw hole communicates with the internal space of the resin case, detailed description regarding the overlapping portions is omitted.

  According to the power device 3 of the third embodiment, the resin case 10 has the case through hole 52 communicating with the internal space. The resin case 10 and the heat sink 20 are fixed by tightening the resin case 10 with the metal tapping screw 60 from below the heat sink through hole 40 to above the case through hole 52, and then the liquid silicone gel 36. Is injected into the internal space of the resin case 10. At this time, the liquid silicone gel 36 is filled not only in the internal space of the resin case 10 but also in the gaps of the case through holes 52 communicating therewith. That is, according to the third embodiment, the silicone gel 36 that is an insulating member is filled in the case through hole 52.

Thus, since the filled silicone gel 36 has a high withstand voltage similar to the high withstand voltage resin 70 described in the first embodiment (withstand voltage is 10 kV or more, for example), the power device 3 according to this embodiment As in the first embodiment, the partial discharge resistance between the metal tapping screw 60 and the charged portion such as the emitter main electrode 14 can be improved.
Further, since it is not necessary to separately inject the high withstand voltage resin 70 as in the first embodiment, the partial discharge withstand capability can be improved by a simpler work process (that is, a cheaper manufacturing cost).

Embodiment 4 FIG.
A power device according to a fourth embodiment of the present invention will be described below with reference to FIG. The power device 4 shown in FIG. 7 has the same configuration as that of the third embodiment except that a high withstand voltage resin instead of silicone gel is separately injected into the case through-hole as an insulating member. The detailed explanation is omitted.

  According to the power device 4 of the fourth embodiment, after fixing the resin case 10 and the heat radiating plate 20 using the metal tapping screw 60, the high withstand voltage resin 70 as an insulating member is formed in the gap of the case through hole 52. Injection is performed from the tip 62 side of the metal tapping screw 60. Then, after removing the bubbles of the high withstand voltage resin 70, the resin is cured.

  Since the gap of the case through hole 52 is filled with the high withstand voltage resin 70 in this way, the partial discharge withstand voltage between the metal tapping screw 60 and the charged portion such as the emitter main electrode 14 is improved as in the first embodiment. Can be made. Moreover, since the high withstand voltage resin 70 has a higher withstand voltage than the silicone gel 36, it is possible to realize a partial discharge withstand voltage higher than that of the power device 3 of the third embodiment.

Embodiment 5 FIG.
A power device according to a fifth embodiment of the present invention will be described below with reference to FIG. The power device 5 shown in FIG. 8 has the same configuration as that of the fourth embodiment except that the case through-hole has an enlarged portion disposed adjacent to the tip of the metal tapping screw, and thus overlaps. Detailed description about the part is omitted.

As described above, in the power device 5 according to this embodiment, the case through-hole 52 has the enlarged portion (resin receiving portion) 72 in the vicinity of the distal end portion 62 of the metal tapping screw 60. After the resin case 10 is fixed to the heat radiating plate 20, when the high withstand voltage resin 70 is injected into the gap of the case through-hole 52 from the front end 62 side of the metal tapping screw 60 and cured, the enlarged portion 72 is provided. Therefore, it is easy to inject the high withstand voltage resin 70. That is, by providing the enlarged portion 72, the operation of injecting the high withstand voltage resin 70 into the gap of the case through hole 52 can be facilitated. Furthermore, normally, after injecting the high withstand voltage resin 70, the defoaming process is performed to remove bubbles in the high withstand voltage resin 70. However, the opening area of the enlarged portion 72 is the same as that of the case through hole 52 of the fourth embodiment. Since it is substantially larger than the opening area, bubbles can be easily removed, and the partial discharge resistance can be improved more reliably.
As will be readily understood by those skilled in the art, the enlarged portion 72 according to the fifth embodiment can be used as an insulating member for receiving not only the high withstand voltage resin 70 but also the silicone gel 36. That is, the enlargement unit 72 can be applied not only to the fourth embodiment but also to the third embodiment.

Embodiment 6 FIG.
A power device according to a sixth embodiment of the present invention will be described below with reference to FIG. The power device 6 shown in FIG. 9 uses a metal screw and a metal nut instead of a metal tapping screw to engage the resin case with the heat sink, but is otherwise the same as in the third embodiment. Therefore, a detailed description of the overlapping parts is omitted.

  In the power device 6 of the sixth embodiment, the resin case 10 has a case through hole 52, the heat sink 20 has a heat sink plate through hole 40, and is made of metal that is inserted from the heat sink plate through hole 40 to the case through hole 52. A small screw (hereinafter simply referred to as “metal screw”) 80 is provided. A metal nut 82 is disposed in the internal space of the resin case 10, and the metal screw 80 and the metal nut 82 cooperate to fix (engage) the resin case 10 to the heat sink 20. That is, the resin screw 10 is fixed to the heat sink 20 by inserting the metal screw 80 from below the heat sink 20 into the heat sink through hole 40 and the case through hole 52 and then tightening the metal screw 82. Thereafter, the defoamed silicone gel 36 is injected into the internal space of the resin case 10 and cured (filled).

  In the power device 6 configured in this manner, the metal screw 80 and the metal nut 82 which are grounding portions are covered with the silicone gel 36 having a high withstand voltage, as in the power device 3 of the third embodiment. It is possible to improve the partial discharge tolerance between the screw making 80 and the charged part such as the emitter main electrode 14. Further, since the tapping screw is not used to fix the resin case 10 to the heat radiating plate 20, it is possible to prevent damage to the resin case 10 that may be caused by excessively tightening the tapping screw.

  In the above embodiment, the metal screw 80 is used to fix the heat radiating plate 20 and the resin case 10, but a screw (not shown) made of an insulating material may be used. In this case, the insulating screw and nut 82 are insulated from the heat sink 20 and no longer constitute a grounding portion. That is, the problem of partial discharge tolerance between the insulating screw and the charged part can be eliminated. Furthermore, since the insulating screw is lighter than the metal screw, the overall weight of the power device 6 can be reduced.

Embodiment 7 FIG.
A power device according to a seventh embodiment of the present invention will be described below with reference to FIG. Since the power device 7 shown in FIG. 10 has the same configuration as that of the sixth embodiment except that a metal nut is molded integrally with the resin case, detailed description regarding the overlapping portions is omitted.

As described above, the metal nut 82 of the power device 7 shown in FIG. 10 is insert-molded integrally with the resin case 10. Therefore, according to the seventh embodiment, the number of assembly parts can be reduced, and when the metal screw 80 is fastened to the metal nut 82, the operator does not need to hold the metal nut 82, and the assembly work is easy. Can be.
Further, as in the sixth embodiment, since the tapping screw is not used to fix the resin case to the heat radiating plate, it is possible to prevent the resin case from being damaged by excessively tightening the tapping screw.
Further, the resin case 10 may be fixed to the heat sink 20 using screws made of an insulating material instead of the metal screws 80. In this way, the problem of partial discharge resistance between the insulating screw and the charged part can be solved.

Embodiment 8 FIG.
An eighth embodiment of the power device according to the present invention will be described below with reference to FIGS. The power device 8 shown in FIG. 11 generally uses a screw with a head inserted from above instead of a screw inserted from below, and a female screw is formed in the heat sink through hole. Since it has the same configuration as that of the sixth embodiment, detailed description on the overlapping parts is omitted.

  According to the power device 8 of the eighth embodiment, in order to fix the resin case 10 to the heat radiating plate 20, the screw 84 with a head is passed through the heat radiating plate of the heat radiating plate 20 from above the case through hole 52 of the resin case 10. It is inserted downward toward the hole 40 and engages with a female screw 42 (thread not shown) formed inside the heat sink through hole 40. Thus, according to the eighth embodiment, nuts as separate components can be omitted to reduce the number of parts, and workability can be improved to reduce manufacturing costs.

Further, in the power device 8, a screw insertion guide 86 may be provided as shown in FIGS. 12 and 13 in order to facilitate the insertion of the head-attached screw 84 from above the case through hole 52. The screw insertion guide 86 is configured as a cylindrical wall extending upward from the resin case 10, and when the head-attached screw 84 is inserted into the screw insertion guide 86, the distal end portion 87 of the head-attached screw 84 becomes the case through hole. 52 and can be easily tightened to the heat sink through hole 40. Thus, the screw insertion guide 86 can further improve the assembly workability of the power device 8. Preferably, the screw insertion guide 86 is molded integrally with the resin case 10.
Furthermore, as shown in FIG. 13, it is preferable that the screw insertion guide 86 is provided with at least one slit in order to guide the silicone gel 36 to flow inwardly. Thereby, the silicone gel 36 is sufficiently filled on the head 89 of the screw 84 with the head, and the partial discharge resistance can be improved.

  In addition, the heat sink plate through-hole 40 in which the female screw 42 is formed does not necessarily have to pass through the heat sink plate 20 and may be a simple hole in which the female screw 42 is formed.

Embodiment 9 FIG.
A ninth embodiment of a power device according to the present invention will be described below with reference to FIG. The power device 9 shown in FIG. 14 uses a set screw in place of the head screw to fix the resin case 10 to the heat radiating plate 20, but has the same configuration as that of the eighth embodiment in other respects. Therefore, the detailed description regarding the overlapping part is omitted.

  The resin case 10 of the power device 9 includes a nut 90 which is preferably held by insert molding, and the heat sink 20 has a female screw 42 (thread not shown) and an end 44. A hole 46 is included. The power device 9 also has a set screw 92 inserted through the nut 90, the case through hole 52, and the heat sink plate hole 46.

The set screw 92 is tightened until the tip thereof abuts against the end 44 of the heat sink 20 to fix the resin case 10 to the heat sink 20. Thus, the silicone gel 36 can be sufficiently filled on the upper end 94 of the set screw 92 to improve the partial discharge resistance.
Further, the upper end portion 94 of the set screw 92 is configured to be positioned below the upper end surface 96 of the nut 90, that is, not to protrude from the upper end surface 96. Thereby, in particular, the electric field at the upper end portion 94 of the set screw 92 can be relaxed, and the partial discharge resistance can be further improved.

In the power device 9 as well, as in the seventh embodiment, the resin case 10 may be fixed to the heat sink 20 using a set screw made of an insulating material. Then, the problem of the partial discharge tolerance between the insulating set screw and the charged part can be solved.
Further, as described in the eighth embodiment, in order to facilitate the insertion of the set screw 92 into the nut 90 and the heat sink plate hole 46, the resin case 10 is provided with a screw insertion guide 86 with a slit 88 (not shown). ), Assembly workability can also be improved.

1 is a plan view of a semiconductor device according to a first embodiment of the present invention. It is sectional drawing seen from the II-II line of FIG. It is sectional drawing seen from the III-III line of FIG. It is a partially expanded sectional view of FIG. FIG. 6 is a partially enlarged cross-sectional view of the semiconductor device of the second embodiment. FIG. 10 is a partially enlarged cross-sectional view of the semiconductor device of the third embodiment. FIG. 10 is a partially enlarged cross-sectional view of the semiconductor device of the fourth embodiment. FIG. 10 is a partially enlarged cross-sectional view of the semiconductor device of the fifth embodiment. FIG. 10 is a partial enlarged cross-sectional view of a semiconductor device according to a sixth embodiment. FIG. 10 is a partially enlarged cross-sectional view of a semiconductor device according to a seventh embodiment. FIG. 10 is a partial enlarged cross-sectional view of a semiconductor device according to an eighth embodiment. FIG. 12 is a partially enlarged cross-sectional view of a semiconductor device showing a modification of FIG. 11. FIG. 13 is a plan view of the semiconductor device shown in FIG. 12. FIG. 20 is a partial enlarged cross-sectional view of the semiconductor device of the ninth embodiment.

Explanation of symbols

1-9 Power semiconductor device (power device), 10 resin case, 12 main surface, 14 emitter main electrode, 16 collector main electrode, 20 heat sink, 22 adhesive resin, 24 bush, 26 bush through-hole, 30 insulating substrate, 32 Semiconductor chip for power, 34 Aluminum wire, 36 Silicone gel, 38 Epoxy resin, 40 Heat sink plate through hole, 42 Female screw, 44 End, 46 Heat sink plate hole, 50 Screw hole, 52 Case through hole, 60 Metal tapping screw , 62 tip, 64 coating, 66 head, 70 high voltage resin, 72 enlarged portion, 80 metal screw, 82 metal nut, 84 head screw, 86 screw insertion guide, 89 head, 90 nut, 92 Set screw, 94 Upper end.

Claims (12)

A resin case including a screw hole, an insulating substrate on which a semiconductor chip is mounted, a heat sink including a heat sink through-hole, and mounting the insulating substrate, and passing through the heat sink through hole and the screw hole, the resin case In a semiconductor device having a metal tapping screw that engages with the heat sink,
A semiconductor device characterized in that a gap in the screw hole formed between the resin case and the metal tapping screw is filled with an insulating resin . A resin case including a screw hole, an insulating substrate on which a semiconductor chip is mounted, a heat sink including a heat sink through-hole, and mounting the insulating substrate, and passing through the heat sink through hole and the screw hole, the resin case In a semiconductor device having a metal tapping screw that engages with the heat sink,
The semiconductor device, wherein the metal tapping screw has a coating made of an insulating resin . A resin case; an insulating substrate on which a semiconductor chip is mounted; a heat dissipation plate including the heat sink through hole; and a metal tapping screw that engages the resin case with the heat sink; and the resin In a semiconductor device having a silicone gel filled in an internal space surrounded by a case,
The resin case has a case through hole communicating with the internal space;
The metal tapping screw passes through the heat sink through hole and the case through hole,
An insulating member is filled in the case through hole. The semiconductor device according to claim 3.
The semiconductor device, wherein the insulating member is the silicone gel or an insulating resin . The semiconductor device according to claim 3.
The case through hole has an enlarged portion disposed adjacent to a tip of the metal tapping screw;
The semiconductor device, wherein the insulating member is filled in the enlarged portion of the case through hole. A resin case, an insulating substrate on which a semiconductor chip is mounted, a heat sink including a heat sink through hole, and a heat sink having the insulating substrate mounted therein, and a silicone gel filled in an internal space surrounded by the resin case In semiconductor devices,
The resin case has a case through hole communicating with the internal space;
Through the heat sink through hole and the case through hole, in cooperation with a nut disposed in the resin case, a screw for engaging the heat sink and the resin case is disposed ;
The semiconductor device is characterized in that the silicone gel filled in the internal space is also filled in the case through hole and covers a screw and a nut . The semiconductor device according to claim 6.
A semiconductor device, wherein the nut is molded integrally with the resin case. The semiconductor device according to claim 6.
The semiconductor device, wherein the screw is made of a metal or an insulating material. A semiconductor having a resin case, an insulating substrate on which a semiconductor chip is mounted, a heat radiating plate including a heat radiating plate hole and mounting the insulating substrate, and a silicone gel filled in an internal space surrounded by the resin case In the device
The resin case has a case through hole communicating with the internal space;
The heat sink hole includes an internal thread;
Through the case through hole and the heat sink hole, in cooperation with the female screw of the heat sink hole, a screw with a head for engaging the heat sink and the resin case is disposed ,
2. The semiconductor device according to claim 1, wherein the silicone gel filled in the internal space is also filled in the case through hole and covers the screw with a head . The semiconductor device according to claim 9.
The semiconductor device, wherein the resin case has a screw insertion guide. The semiconductor device according to claim 10.
The semiconductor device, wherein the screw insertion guide has at least one slit for guiding the silicone gel. The semiconductor device according to claim 1, wherein the insulating resin does not substantially contain bubbles.

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