JP4415750B2 - Solid state laser equipment - Google Patents

Solid state laser equipment Download PDF

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JP4415750B2
JP4415750B2 JP2004143328A JP2004143328A JP4415750B2 JP 4415750 B2 JP4415750 B2 JP 4415750B2 JP 2004143328 A JP2004143328 A JP 2004143328A JP 2004143328 A JP2004143328 A JP 2004143328A JP 4415750 B2 JP4415750 B2 JP 4415750B2
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solid
laser
state laser
frequency noise
noise component
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JP2005327843A (en
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一馬 渡辺
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Shimadzu Corp
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Shimadzu Corp
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Description

本発明は、固体レーザ装置に関し、さらに詳しくは、光の高周波ノイズ成分を常時抑制することが出来る固体レーザ装置に関する。   The present invention relates to a solid-state laser device, and more particularly to a solid-state laser device that can constantly suppress high-frequency noise components of light.

固体レーザ装置は、半導体レーザと固体レーザ結晶とを含むレーザ発振部を収容する筐体外に、光出力に基づいて半導体レーザの駆動電流を制御する制御部が設けられており、両者はケーブル等で接続されている。しかし、ケーブル等を介して信号を伝達すると、伝送路中に大きな時定数が発生してしまい、制御部の応答速度を速くしても、光の高周波ノイズ成分を十分に抑制できなかった。   The solid-state laser device is provided with a control unit for controlling the drive current of the semiconductor laser based on the optical output outside the housing that houses the laser oscillation unit including the semiconductor laser and the solid-state laser crystal. It is connected. However, when a signal is transmitted through a cable or the like, a large time constant is generated in the transmission line, and even if the response speed of the control unit is increased, the high frequency noise component of light cannot be sufficiently suppressed.

そこで、高周波ノイズ成分が最も少なくなるように、半導体レーザ，共振器，エタロンの温度を別個にチューニングする固体レーザ装置が提案されている（例えば、特許文献１参照。）。
特開２００３−１５８３１８号公報（［００１８］〜［００２０］） Therefore, a solid-state laser device has been proposed in which the temperatures of the semiconductor laser, the resonator, and the etalon are separately tuned so as to minimize the high-frequency noise component (see, for example, Patent Document 1).
JP 2003-158318 A ([0018] to [0020])

従来の固体レーザ装置では、半導体レーザ，共振器，エタロンの温度をそれぞれチューニングすることで高周波ノイズ成分を抑制している。
しかし、チューニングは、例えば毎日始業時の電源立ち上げ時に行われるだけなので、チューニングから時間が経つと、高周波ノイズ成分を抑制できなくなるおそれがあった。
そこで、本発明の目的は、光の高周波ノイズ成分を常時抑制することが出来る固体レーザ装置を提供することにある。 In a conventional solid-state laser device, high-frequency noise components are suppressed by tuning the temperatures of a semiconductor laser, a resonator, and an etalon, respectively.
However, tuning is performed only when the power supply is turned on at the start of work every day, for example. Therefore, there is a possibility that the high frequency noise component cannot be suppressed as time passes after tuning.
Therefore, an object of the present invention is to provide a solid-state laser device that can always suppress high-frequency noise components of light.

第１の観点では、本発明は、半導体レーザと固体レーザ結晶とを含むレーザ発振部を収容する筐体外に、光出力に基づいて前記半導体レーザの駆動電流を制御する制御部を設けてなる固体レーザ装置であって、前記光出力から高周波ノイズ成分を取り出すフィルタと、前記高周波ノイズ成分を抑制するように前記半導体レーザの駆動電流を制御する第２の制御回路とを、前記制御部よりも前記レーザ発振部の近傍に設けたことを特徴とする固体レーザ装置を提供する。
上記第１の観点による固体レーザ装置では、フィルタと第２の制御回路とを制御部よりもレーザ発振部の近傍に設けたため、高周波ノイズ成分に関しては伝送路中に大きな時定数が発生しなくなる。このため、光の高周波ノイズ成分を十分に抑制できる。また、フィルタと第２の制御回路とは常時作動するため、光の高周波ノイズ成分を常時抑制することが出来る。 In a first aspect, the present invention provides a solid state in which a control unit for controlling a driving current of the semiconductor laser based on an optical output is provided outside a housing that houses a laser oscillation unit including a semiconductor laser and a solid-state laser crystal. A laser device comprising: a filter that extracts a high-frequency noise component from the optical output; and a second control circuit that controls a drive current of the semiconductor laser so as to suppress the high-frequency noise component, than the control unit. Provided is a solid-state laser device provided in the vicinity of a laser oscillation unit.
In the solid-state laser device according to the first aspect, since the filter and the second control circuit are provided in the vicinity of the laser oscillation unit rather than the control unit, a large time constant is not generated in the transmission path for the high-frequency noise component. For this reason, the high frequency noise component of light can fully be suppressed. Moreover, since the filter and the second control circuit are always operated, the high frequency noise component of light can be constantly suppressed.

第２の観点では、本発明は、上記構成の固体レーザ装置において、前記フィルタと前記第２の制御回路とを、前記レーザ発振部を収容する筐体内に設けたことを特徴とする固体レーザ装置を提供する。
上記第２の観点による固体レーザ装置では、レーザ発振部を収容する筐体内にフィルタと第２の制御回路とを設けたため、高周波ノイズ成分に関しては伝送路中に大きな時定数が発生しなくなる。このため、光の高周波ノイズ成分を十分に抑制できる。また、フィルタと第２の制御回路とは常時作動するため、光の高周波ノイズ成分を常時抑制することが出来る。 In a second aspect, the present invention provides the solid-state laser apparatus having the above-described configuration, wherein the filter and the second control circuit are provided in a housing that houses the laser oscillation unit. I will provide a.
In the solid-state laser device according to the second aspect, since the filter and the second control circuit are provided in the housing that accommodates the laser oscillation unit, a large time constant is not generated in the transmission path for the high-frequency noise component. For this reason, the high frequency noise component of light can fully be suppressed. Moreover, since the filter and the second control circuit are always operated, the high frequency noise component of light can be constantly suppressed.

本発明の固体レーザ装置によれば、光の高周波ノイズ成分を十分に且つ常時抑制することが出来る。   According to the solid-state laser device of the present invention, the high-frequency noise component of light can be sufficiently and always suppressed.

以下、図に示す実施例により本発明をさらに詳細に説明する。なお、これにより本発明が限定されるものではない。   Hereinafter, the present invention will be described in more detail with reference to the embodiments shown in the drawings. Note that the present invention is not limited thereby.

図１は、実施例１に係る固体レーザ装置１００を示す説明図である。
この固体レーザ装置１００は、レーザ発振部筐体１５に収容されたレーザ発振部１７と、制御部筐体２５に収容された制御部２０と、レーザ発振部１７と制御部２０とを接続するケーブル３０とからなっている。 FIG. 1 is an explanatory diagram illustrating a solid-state laser device 100 according to the first embodiment.
The solid-state laser device 100 includes a laser oscillation unit 17 housed in a laser oscillation unit housing 15, a control unit 20 housed in a control unit housing 25, and a cable connecting the laser oscillation unit 17 and the control unit 20. It consists of 30.

レーザ発振部１７は、励起光（波長λａ）を出射する半導体レーザ３と、励起光を集光する集光レンズ系４と、励起光の入射面に反射面が形成され励起光により基本波光（波長λｂ）を発生するレーザ媒質５と、基本波光が入射すると第２高調波光（波長λｃ＝λｂ／２）を発生するＳＨＧ素子６と、波長選択用のエタロン７と、レーザ媒質５の反射面との間で光共振器を形成する反射面を持つ出力ミラー９と、出力ミラー９から外部へ出力されるレーザ光の一部を透過すると共に残りを分岐するビームスプリッタ１０と、分岐光の強度を検出するためのホトダイオード１１と、ホトダイオード１１の出力から高周波ノイズ成分を抽出するハイパスフィルタ１２と、高周波ノイズ成分を抑制するための補正電流Ｉ２を出力する負帰還回路１３と、補正電流Ｉ２と制御部２０から出力された制御電流Ｉ１とを加算して半導体レーザ３へ駆動電流Ｉｄを出力するアンプ１４と、ペルチェ素子と温度センサとを有し半導体レーザ３の温度調整を行うための半導体レーザ温調ユニット１と、ペルチェ素子と温度センサとを有し共振器の温度調整を行うための共振器温調ユニット２と、ペルチェ素子と温度センサとを有しエタロン７の温度調整を行うためのエタロン温調ユニット８と、コネクタ１６とを具備している。   The laser oscillation unit 17 includes a semiconductor laser 3 that emits excitation light (wavelength λa), a condensing lens system 4 that collects the excitation light, a reflection surface formed on an incident surface of the excitation light, and a fundamental wave light ( A laser medium 5 that generates a wavelength λb), an SHG element 6 that generates second harmonic light (wavelength λc = λb / 2) when the fundamental light is incident, an etalon 7 for wavelength selection, and a reflection surface of the laser medium 5 An output mirror 9 having a reflecting surface that forms an optical resonator, a beam splitter 10 that transmits part of the laser light output from the output mirror 9 to the outside and branches the rest, and the intensity of the branched light , A high-pass filter 12 that extracts a high-frequency noise component from the output of the photodiode 11, a negative feedback circuit 13 that outputs a correction current I2 for suppressing the high-frequency noise component, The correction current I2 and the control current I1 output from the control unit 20 are added to output the drive current Id to the semiconductor laser 3, and a Peltier element and a temperature sensor are used to adjust the temperature of the semiconductor laser 3. Semiconductor laser temperature control unit 1 for the purpose, resonator temperature control unit 2 for adjusting the temperature of the resonator having a Peltier element and a temperature sensor, and temperature adjustment of the etalon 7 having a Peltier element and a temperature sensor The etalon temperature control unit 8 and the connector 16 are provided.

制御部２０は、半導体レーザ温調ユニット１を介して半導体レーザ３の温度を制御する半導体レーザ温度制御回路２１と、共振器温調ユニット２を介して共振器の温度を制御する共振器温度制御回路２２と、エタロン温調ユニット８を介してエタロン７の温度を制御するエタロン温度制御回路２８と、ホトダイオード１１の出力から光出力成分を抽出する光出力検出回路２３と、光出力を所定強さにするように制御電流Ｉ１を出力する半導体レーザ駆動電流制御回路２４と、コネクタ２６とを具備している。   The control unit 20 includes a semiconductor laser temperature control circuit 21 that controls the temperature of the semiconductor laser 3 through the semiconductor laser temperature control unit 1, and a resonator temperature control that controls the temperature of the resonator through the resonator temperature control unit 2. A circuit 22; an etalon temperature control circuit 28 for controlling the temperature of the etalon 7 via the etalon temperature control unit 8; a light output detection circuit 23 for extracting a light output component from the output of the photodiode 11; The semiconductor laser drive current control circuit 24 that outputs the control current I1 and the connector 26 are provided.

ケーブル３０は、レーザ発振部１７のコネクタ１６と制御部２０のコネクタ２６とを結合している。   The cable 30 couples the connector 16 of the laser oscillation unit 17 and the connector 26 of the control unit 20.

実施例１に係る固体レーザ装置１００によれば、制御部２０の帰還制御で光出力の強度を規定範囲内で一定に制御できると共に、制御部２０の帰還制御では抑制できない高周波ノイズ成分を、レーザ発振部筐体１５内に設置されたハイパスフィルタ１２および負帰還回路１３により効果的に抑制することが出来る。   According to the solid-state laser apparatus 100 according to the first embodiment, the intensity of the optical output can be controlled to be constant within a specified range by the feedback control of the control unit 20, and the high-frequency noise component that cannot be suppressed by the feedback control of the control unit 20 is reduced. The high-pass filter 12 and the negative feedback circuit 13 installed in the oscillating unit housing 15 can be effectively suppressed.

レーザ発振部筐体１５内でなく、レーザ発振部筐体１５の近傍にハイパスフィルタ１２および負帰還回路１３を設置してもよい。   The high-pass filter 12 and the negative feedback circuit 13 may be installed in the vicinity of the laser oscillator housing 15 instead of in the laser oscillator housing 15.

本発明の固体レーザ装置は、広帯域通信，データ記憶装置，精密計測などに利用できる。   The solid-state laser device of the present invention can be used for broadband communication, data storage device, precision measurement and the like.

実施例１に係る固体レーザ装置を示すブロック図である。1 is a block diagram showing a solid-state laser device according to Embodiment 1. FIG.

符号の説明Explanation of symbols

３ 半導体レーザ
４ 集光レンズ系
５ レーザ媒質
６ ＳＨＧ素子
７ エタロン
９ 出力ミラー
１０ ビームスプリッタ
１１ ホトダイオード
１２ ハイパスフィルタ
１３ 負帰還回路
１４ アンプ
１５ レーザ発振部筐体
２５ 制御部筐体
３０ ケーブル
１００ 固体レーザ装置 DESCRIPTION OF SYMBOLS 3 Semiconductor laser 4 Condenser lens system 5 Laser medium 6 SHG element 7 Etalon 9 Output mirror 10 Beam splitter 11 Photo diode 12 High pass filter 13 Negative feedback circuit 14 Amplifier 15 Laser oscillation part housing | casing 25 Control part housing | casing 30 Cable 100 Solid state laser apparatus

Claims (1)

半導体レーザと固体レーザ結晶とを含むレーザ発振部を収容する筐体外に、光出力に基づいて前記半導体レーザの駆動電流を制御する制御部を設けてなる固体レーザ装置であって、前記レーザ発振部を収容する筐体内に、前記光出力から高周波ノイズ成分を取り出すフィルタと、前記高周波ノイズ成分を抑制するように前記半導体レーザの駆動電流を制御する第２の制御回路とを設けたことを特徴とする固体レーザ装置。 A solid-state laser device comprising a control unit that controls a driving current of the semiconductor laser based on an optical output outside a housing that houses a laser oscillation unit including a semiconductor laser and a solid-state laser crystal, the laser oscillation unit a casing for housing and a filter for extracting a high-frequency noise component from said light output, and wherein said that a second control circuit for controlling the driving current of the semiconductor laser digits set so as to suppress the high frequency noise component Solid state laser device.
JP2004143328A 2004-05-13 2004-05-13 Solid state laser equipment Expired - Lifetime JP4415750B2 (en)

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JP4415750B2 true JP4415750B2 (en) 2010-02-17

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