JP4409231B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4409231B2
JP4409231B2 JP2003307074A JP2003307074A JP4409231B2 JP 4409231 B2 JP4409231 B2 JP 4409231B2 JP 2003307074 A JP2003307074 A JP 2003307074A JP 2003307074 A JP2003307074 A JP 2003307074A JP 4409231 B2 JP4409231 B2 JP 4409231B2
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region
film
semiconductor
semiconductor region
impurity
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Japanese (ja)
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JP2005079299A (ja
JP2005079299A5 (enExample
Inventor
康行 荒井
純一 肥塚
幸恵 根本
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2003307074A 2003-08-29 2003-08-29 半導体装置の作製方法 Expired - Fee Related JP4409231B2 (ja)

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JP2003307074A JP4409231B2 (ja) 2003-08-29 2003-08-29 半導体装置の作製方法

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JP2003307074A JP4409231B2 (ja) 2003-08-29 2003-08-29 半導体装置の作製方法

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JP2005079299A JP2005079299A (ja) 2005-03-24
JP2005079299A5 JP2005079299A5 (enExample) 2006-09-14
JP4409231B2 true JP4409231B2 (ja) 2010-02-03

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10475650B2 (en) 2016-03-24 2019-11-12 Kyushu University, National University Corporation Laser doping device and semiconductor device manufacturing method
US10629438B2 (en) 2015-03-23 2020-04-21 Kyushu University Laser doping apparatus and laser doping method

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI357157B (en) * 2006-06-12 2012-01-21 Kovio Inc Printed, self-aligned, top-gate thin film transist
EP1890322A3 (en) * 2006-08-15 2012-02-15 Kovio, Inc. Printed dopant layers
CN105793960B (zh) * 2014-06-12 2018-09-11 富士电机株式会社 杂质添加装置、杂质添加方法以及半导体元件的制造方法
JP6439297B2 (ja) * 2014-07-04 2018-12-19 富士電機株式会社 不純物導入方法、不純物導入装置及び半導体素子の製造方法
JP6468041B2 (ja) 2015-04-13 2019-02-13 富士電機株式会社 不純物導入装置、不純物導入方法及び半導体素子の製造方法
US10355107B2 (en) * 2016-07-25 2019-07-16 Boe Technology Group Co., Ltd. Polycrystalline silicon thin film transistor and method of fabricating the same, and display apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10629438B2 (en) 2015-03-23 2020-04-21 Kyushu University Laser doping apparatus and laser doping method
US10475650B2 (en) 2016-03-24 2019-11-12 Kyushu University, National University Corporation Laser doping device and semiconductor device manufacturing method

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JP2005079299A (ja) 2005-03-24

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