JP4398194B2 - 自己整列型埋込みストラップの接続部の形成 - Google Patents
自己整列型埋込みストラップの接続部の形成 Download PDFInfo
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- JP4398194B2 JP4398194B2 JP2003287154A JP2003287154A JP4398194B2 JP 4398194 B2 JP4398194 B2 JP 4398194B2 JP 2003287154 A JP2003287154 A JP 2003287154A JP 2003287154 A JP2003287154 A JP 2003287154A JP 4398194 B2 JP4398194 B2 JP 4398194B2
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- 230000015572 biosynthetic process Effects 0.000 title description 6
- 239000000758 substrate Substances 0.000 claims description 40
- 125000006850 spacer group Chemical group 0.000 claims description 27
- 239000002019 doping agent Substances 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 20
- 238000009792 diffusion process Methods 0.000 claims description 16
- 239000003990 capacitor Substances 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 6
- 239000012212 insulator Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 4
- 238000011049 filling Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
- H10B12/0385—Making a connection between the transistor and the capacitor, e.g. buried strap
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/66181—Conductor-insulator-semiconductor capacitors, e.g. trench capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/39—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench
- H10B12/395—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench the transistor being vertical
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
Description
前記半導体基板内に形成され垂直開口軸および開口側壁を有する開口中に、前記下部電気接点を形成するステップと、
前記下部電気接点の上に、前記垂直軸に沿って第1の長さを有する一時的な層を堆積させるステップと、
前記一時的な層の上の開口側壁上に垂直スペーサを形成するステップと、
前記一時的な層を除去し、それによって拡散ウインドウ内で前記垂直スペーサの下に開口側壁を露出させるステップと、
前記拡散ウインドウを通して前記基板内にドーパントを拡散させ、それによって前記下部電気接点から、前記垂直スペーサに隣接する前記基板の一部への導電経路を垂直に形成するステップと、
前記下部電極として、前記垂直スペーサに隣接する前記基板の前記部分を伴う前記回路素子を形成するステップとを含む方法。
(2)ドーパントを拡散させる前記ステップの後に、前記下部電極の上に絶縁層を堆積させるステップをさらに含む、上記(1)に記載の方法。
(3)前記スペーサを除去し、それによって前記絶縁層の上の前記基板の壁を露出させるステップをさらに含む、上記(2)に記載の方法。
(4)前記拡散ウインドウが垂直方向にある範囲を有し、前記絶縁層の厚さが前記垂直範囲よりも薄く、前記絶縁層の上の露出した基板の壁がドーピングされ、
さらに、前記開口中に、前記導電経路によって前記下部電極に接続される前記回路素子を形成するステップを含む上記(3)に記載の方法。
(5)前記回路素子がDRAMセルのパス・トランジスタであり、前記下部電気接点が前記DRAMセルのコンデンサの接点であり、前記垂直トランジスタ本体が前記垂直スペーサに隣接して形成され、前記拡散ウインドウを通って拡散させたドーパントが、前記下部電極と前記トランジスタ本体の間に自己整列型導電経路を形成する、上記(1)に記載の方法。
(6)前記下部電気接点がコンデンサ電極であり、
さらに、開口の壁の前記垂直スペーサを除去し、前記開口の壁にトランジスタ・ゲート絶縁体を形成し、次いで、前記コンデンサを含むDRAMセルの上側部分を形成するステップをさらに含む、上記(1)に記載の方法。
(7)ドーパントを拡散させる前記ステップの後、前記垂直スペーサを除去する前記ステップの前に、前記下部電極の上に絶縁層を堆積させ、前記絶縁層がDRAMセルの前記上側部分から前記コンデンサを分離するステップをさらに含む、上記(6)に記載の方法。
(8)前記回路素子が、集積回路の少なくとも1つの追加の構成要素に接続される相互接続部材である、上記(4)に記載の方法。
(9)前記基板が、絶縁層の上に配設されたデバイス層を備え、前記回路素子が、前記絶縁層を貫通して垂直に延び、集積回路の少なくとも1つの追加の構成要素に接続される垂直相互接続部材である、上記(8)に記載の方法。
(10)前記デバイス層がシリコンを含み、前記絶縁層が酸化シリコンを含み、前記基板がシリコンを含む、上記(9)に記載の方法。
20 パッド層
50 開口、トレンチ
62 犠牲膜、絶縁体層、酸化物層
64 スペース、ウインドウ
65 TTO、トレンチ上部酸化物
72 スペーサ
100 DRAMセル、垂直トランジスタ
110 トランジスタ本体
111 下部電極
112 接点
113 上部電極
115 ゲート
116 接点
150 トランジスタ
170 導電経路の位置
172 導電経路、ドーピングした区域
180 垂直トランジスタの位置
182 熱ゲート酸化物層、絶縁体
201 誘電体
205 中央電極、上部電極、ポリ
207 カラー、誘電体
210 埋込みストラップ、下部接点、ポリ
212 間隙
300 支援回路
d1 深さ
d2 深さ
Claims (3)
- 半導体基板内に、前記基板の表面下、第1の深さのところに形成されたトレンチ・コンデンサの電極接点と、前記第1の深さよりも浅い第2の深さのところに形成された垂直トランジスタの下部電極との間で電気的接続を行う方法であって、
前記半導体基板内に形成され垂直開口軸および開口側壁を有する開口中に、前記電極接点を形成するステップと、
前記電極接点の上に、前記垂直開口軸に沿って第1の厚さを有する一時的な層を堆積させるステップと、
前記一時的な層の上の前記開口側壁上に垂直スペーサを形成するステップと、
前記一時的な層を除去して、拡散用のウインドウとなるように前記垂直スペーサの下に前記開口側壁を露出させるステップと、
前記拡散用のウインドウを通して前記基板内にドーパントを拡散させて、前記電極接点から、前記垂直スペーサに隣接する前記基板の一部分への導電経路および前記下部電極を垂直に形成するステップと、
前記下部電極を有する前記垂直トランジスタを形成するステップとを含む方法。 - ドーパントを拡散させる前記ステップの後に、前記下部電極の上に絶縁層を堆積させるステップをさらに含む、請求項1に記載の方法。
- 前記垂直スペーサを除去して、前記絶縁層の上の前記開口側壁を露出させるステップをさらに含む、請求項2に記載の方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/227,396 US6579759B1 (en) | 2002-08-23 | 2002-08-23 | Formation of self-aligned buried strap connector |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2004088098A JP2004088098A (ja) | 2004-03-18 |
JP4398194B2 true JP4398194B2 (ja) | 2010-01-13 |
Family
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Application Number | Title | Priority Date | Filing Date |
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JP2003287154A Expired - Fee Related JP4398194B2 (ja) | 2002-08-23 | 2003-08-05 | 自己整列型埋込みストラップの接続部の形成 |
Country Status (3)
Country | Link |
---|---|
US (1) | US6579759B1 (ja) |
JP (1) | JP4398194B2 (ja) |
DE (1) | DE10334946B4 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6936512B2 (en) * | 2002-09-27 | 2005-08-30 | International Business Machines Corporation | Semiconductor method and structure for simultaneously forming a trench capacitor dielectric and trench sidewall device dielectric |
US6703274B1 (en) * | 2003-01-03 | 2004-03-09 | International Business Machines Corporation | Buried strap with limited outdiffusion and vertical transistor DRAM |
US6853025B2 (en) * | 2003-02-20 | 2005-02-08 | Infineon Technologies Aktiengesellschaft | Trench capacitor with buried strap |
TW594935B (en) * | 2003-05-23 | 2004-06-21 | Nanya Technology Corp | Method for manufacturing a memory device with vertical transistors and deep trench capacitors to prevent merging of buried strap out-diffusion regions |
US6762099B1 (en) * | 2003-07-01 | 2004-07-13 | Nanya Technology Corp. | Method for fabricating buried strap out-diffusions of vertical transistor |
US7262089B2 (en) * | 2004-03-11 | 2007-08-28 | Micron Technology, Inc. | Methods of forming semiconductor structures |
US7923373B2 (en) | 2007-06-04 | 2011-04-12 | Micron Technology, Inc. | Pitch multiplication using self-assembling materials |
US8227310B2 (en) | 2008-08-06 | 2012-07-24 | International Business Machines Corporation | Integrated circuits comprising an active transistor electrically connected to a trench capacitor by an overlying contact and methods of making |
US9484269B2 (en) * | 2010-06-24 | 2016-11-01 | Globalfoundries Inc. | Structure and method to control bottom corner threshold in an SOI device |
US9721845B1 (en) | 2016-04-26 | 2017-08-01 | International Business Machines Corporation | Vertical field effect transistors with bottom contact metal directly beneath fins |
US11818877B2 (en) | 2020-11-02 | 2023-11-14 | Applied Materials, Inc. | Three-dimensional dynamic random access memory (DRAM) and methods of forming the same |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW425718B (en) * | 1997-06-11 | 2001-03-11 | Siemens Ag | Vertical transistor |
US6222218B1 (en) * | 1998-09-14 | 2001-04-24 | International Business Machines Corporation | DRAM trench |
TW457643B (en) * | 2000-05-16 | 2001-10-01 | Nanya Technology Corp | Manufacturing method of semiconductor memory unit transistor |
US6414347B1 (en) * | 2001-01-10 | 2002-07-02 | International Business Machines Corporation | Vertical MOSFET |
US6406970B1 (en) * | 2001-08-31 | 2002-06-18 | Infineon Technologies North America Corp. | Buried strap formation without TTO deposition |
-
2002
- 2002-08-23 US US10/227,396 patent/US6579759B1/en not_active Expired - Fee Related
-
2003
- 2003-07-31 DE DE10334946A patent/DE10334946B4/de not_active Expired - Fee Related
- 2003-08-05 JP JP2003287154A patent/JP4398194B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2004088098A (ja) | 2004-03-18 |
US6579759B1 (en) | 2003-06-17 |
DE10334946A1 (de) | 2004-03-18 |
DE10334946B4 (de) | 2006-03-09 |
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