JP4396824B2 - 高濃度pcbの光照射脱塩素化方法 - Google Patents
高濃度pcbの光照射脱塩素化方法 Download PDFInfo
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- JP4396824B2 JP4396824B2 JP2004059168A JP2004059168A JP4396824B2 JP 4396824 B2 JP4396824 B2 JP 4396824B2 JP 2004059168 A JP2004059168 A JP 2004059168A JP 2004059168 A JP2004059168 A JP 2004059168A JP 4396824 B2 JP4396824 B2 JP 4396824B2
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- Prior art keywords
- compound
- dechlorination
- pcb
- hydrogen donor
- polychlorinated
- Prior art date
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- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- 239000003002 pH adjusting agent Substances 0.000 description 1
- CEOCDNVZRAIOQZ-UHFFFAOYSA-N pentachlorobenzene Chemical compound ClC1=CC(Cl)=C(Cl)C(Cl)=C1Cl CEOCDNVZRAIOQZ-UHFFFAOYSA-N 0.000 description 1
- 238000006303 photolysis reaction Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- DVQHRBFGRZHMSR-UHFFFAOYSA-N sodium methyl 2,2-dimethyl-4,6-dioxo-5-(N-prop-2-enoxy-C-propylcarbonimidoyl)cyclohexane-1-carboxylate Chemical compound [Na+].C=CCON=C(CCC)[C-]1C(=O)CC(C)(C)C(C(=O)OC)C1=O DVQHRBFGRZHMSR-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Landscapes
- Fire-Extinguishing Compositions (AREA)
- Catalysts (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Description
モノクロロビフェニール 若干
ジクロロビフェニール 12.10%
トリクロロビフェニール 54.98%
テトラクロロビフェニール 27.05%
ペンタクロロビフェニール 4.72%
ヘキサクロロビフェニール 1.08%
ヘプタクロロビフェニール 若干
オクタクロロビフェニール 0
ノナクロロビフェニール 0
デカクロロビフェニール 0
モノクロロビフェニール 0.01%
ジクロロビフェニール 0.48%
トリクロロビフェニール 17.47%
テトラクロロビフェニール 51.43%
ペンタクロロビフェニール 27.92%
ヘキサクロロビフェニール 2.55%
ヘプタクロロビフェニール 0.14%
オクタクロロビフェニール 0%
ノナクロロビフェニール 0%
デカクロロビフェニール 0%
2,3,4,5−テトラクロロビフェニール、2,3,4,6−テトラクロロビフェニール、2,2’,3,4−テトラクロロビフェニール、2,3,3’,4−テトラクロロビフェニール、2,3,4,4’−テトラクロロビフェニール、3,4,4’,5−テトラクロロビフェニール、3,3’,4,4’−テトラクロロビフェニールなどを主に含有。
反応前後の溶液をDB1(J&Wサイエンティフィック製)をキャピラリーカラムとする(株)島津製作所製のガスクロマトグラフィー質量分析計QP5050(以下、「GC−MS」)にかけ、PCBのピーク面積の変化から脱塩素化(分解率)を確認した。
Claims (6)
- ポリ塩化ビフェニール、水素供与体及びアルカリ化合物の混合溶液に、光触媒(貴金属を担持した光触媒を除く)の存在下で太陽光を照射し、外部から水素ガスを供給することなく、ポリ塩化ビフェニールから塩素を除去することを特徴とするポリ塩化ビフェニールの脱塩素化方法。
- 前記ポリ塩化ビフェニールの濃度が500〜100,000ppm(混合溶液全量中)である請求項1に記載のポリ塩化ビフェニールの脱塩素化方法。
- 前記アルカリ化合物の濃度が0.1〜50質量%(水素供与体及びアルカリ化合物の合計量中)である請求項1又は2に記載のポリ塩化ビフェニールの脱塩素化方法。
- 前記アルカリ化合物が水素供与体に溶解した状態である請求項1〜3のいずれかに記載のポリ塩化ビフェニールの脱塩素化方法。
- 前記水素供与体が、複素環式化合物、アミン系化合物、アルコール系化合物、ケトン系化合物及び脂環式化合物からなる群から選ばれた少なくとも一つの化合物である請求項1〜4のいずれかに記載のポリ塩化ビフェニールの脱塩素化方法。
- 前記アルカリ化合物が、苛性ソーダ、苛性カリ、ナトリウムアルコキシド、カリウムアルコキシド及び水酸化カルシウムからなる群から選ばれた少なくとも一つの化合物である請求項1〜4のいずれかに記載のポリ塩化ビフェニールの脱塩素化方法。
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JP2004059168A JP4396824B2 (ja) | 2004-03-03 | 2004-03-03 | 高濃度pcbの光照射脱塩素化方法 |
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JP2004059168A JP4396824B2 (ja) | 2004-03-03 | 2004-03-03 | 高濃度pcbの光照射脱塩素化方法 |
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JP4396824B2 true JP4396824B2 (ja) | 2010-01-13 |
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Families Citing this family (3)
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KR100831894B1 (ko) | 2007-02-27 | 2008-05-23 | 한국과학기술연구원 | 다염화비페닐의 탈염소화 방법 |
JP4793742B1 (ja) * | 2010-06-23 | 2011-10-12 | 敏男 小沼 | Pcb汚染廃電気機器の処理システム |
CN112138718B (zh) * | 2019-06-26 | 2023-06-16 | 北京工商大学 | 一种共价有机框架材料光催化c-c键偶联合成联芳香类化合物的方法 |
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