JP4387834B2 - 点回折干渉計、並びに、それを利用した露光装置及び方法 - Google Patents

点回折干渉計、並びに、それを利用した露光装置及び方法 Download PDF

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Publication number
JP4387834B2
JP4387834B2 JP2004055264A JP2004055264A JP4387834B2 JP 4387834 B2 JP4387834 B2 JP 4387834B2 JP 2004055264 A JP2004055264 A JP 2004055264A JP 2004055264 A JP2004055264 A JP 2004055264A JP 4387834 B2 JP4387834 B2 JP 4387834B2
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JP
Japan
Prior art keywords
optical system
pinhole
wavefront
light
point diffraction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2004055264A
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English (en)
Japanese (ja)
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JP2005241603A (ja
JP2005241603A5 (enExample
Inventor
彰律 大久保
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2004055264A priority Critical patent/JP4387834B2/ja
Priority to US11/064,558 priority patent/US7304749B2/en
Publication of JP2005241603A publication Critical patent/JP2005241603A/ja
Publication of JP2005241603A5 publication Critical patent/JP2005241603A5/ja
Application granted granted Critical
Publication of JP4387834B2 publication Critical patent/JP4387834B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Instruments For Measurement Of Length By Optical Means (AREA)
  • Testing Of Optical Devices Or Fibers (AREA)
JP2004055264A 2004-02-27 2004-02-27 点回折干渉計、並びに、それを利用した露光装置及び方法 Expired - Fee Related JP4387834B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2004055264A JP4387834B2 (ja) 2004-02-27 2004-02-27 点回折干渉計、並びに、それを利用した露光装置及び方法
US11/064,558 US7304749B2 (en) 2004-02-27 2005-02-24 Point diffraction interferometer and exposure apparatus and method using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004055264A JP4387834B2 (ja) 2004-02-27 2004-02-27 点回折干渉計、並びに、それを利用した露光装置及び方法

Publications (3)

Publication Number Publication Date
JP2005241603A JP2005241603A (ja) 2005-09-08
JP2005241603A5 JP2005241603A5 (enExample) 2007-04-12
JP4387834B2 true JP4387834B2 (ja) 2009-12-24

Family

ID=34879781

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004055264A Expired - Fee Related JP4387834B2 (ja) 2004-02-27 2004-02-27 点回折干渉計、並びに、それを利用した露光装置及び方法

Country Status (2)

Country Link
US (1) US7304749B2 (enExample)
JP (1) JP4387834B2 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4782019B2 (ja) * 2004-01-16 2011-09-28 カール・ツァイス・エスエムティー・ゲーエムベーハー 光学系の光学測定のための装置及び方法、測定構造支持材、及びマイクロリソグラフィ投影露光装置
JP4835091B2 (ja) * 2005-10-03 2011-12-14 株式会社ニコン 位置検出装置
JP2007180152A (ja) * 2005-12-27 2007-07-12 Canon Inc 測定方法及び装置、露光装置、並びに、デバイス製造方法
JP2008098604A (ja) * 2006-09-12 2008-04-24 Canon Inc 露光装置及びデバイス製造方法
KR100780185B1 (ko) 2006-11-07 2007-11-27 삼성전기주식회사 회절광학소자를 이용한 렌즈 파면 측정장치
JP2008192855A (ja) * 2007-02-05 2008-08-21 Canon Inc 測定装置、露光装置及びデバイス製造方法
JP2008192936A (ja) * 2007-02-06 2008-08-21 Canon Inc 測定装置、露光装置及びデバイス製造方法
JP2009216454A (ja) * 2008-03-07 2009-09-24 Canon Inc 波面収差測定装置、波面収差測定方法、露光装置およびデバイス製造方法
DE102008029970A1 (de) 2008-06-26 2009-12-31 Carl Zeiss Smt Ag Projektionsbelichtungsanlage für die Mikrolithographie sowie Verfahren zum Überwachen einer lateralen Abbildungsstabilität
JP5604777B2 (ja) * 2008-07-16 2014-10-15 株式会社ニコン 波面生成光学系及び波面収差測定装置
US8432530B2 (en) * 2008-07-22 2013-04-30 Canon Kabushiki Kaisha Device, method, and system for measuring image profiles produced by an optical lithography system
JP5359397B2 (ja) * 2009-03-10 2013-12-04 株式会社ニコン 光学部材及び光学機器
DE102017216679A1 (de) * 2017-09-20 2019-03-21 Carl Zeiss Smt Gmbh Mikrolithographische Projektionsbelichtungsanlage
NL2021357A (en) * 2018-01-31 2018-08-16 Asml Netherlands Bv Two-dimensional diffraction grating

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5764139A (en) 1980-10-08 1982-04-19 Nippon Kogaku Kk <Nikon> Interferometer
JP2679221B2 (ja) 1989-03-02 1997-11-19 株式会社ニコン 干渉計
US5457533A (en) * 1994-06-10 1995-10-10 Wilcken; Stephen K. Point-diffraction interferometer utilizing separate reference and signal beam paths
US5835217A (en) * 1997-02-28 1998-11-10 The Regents Of The University Of California Phase-shifting point diffraction interferometer
US6312373B1 (en) * 1998-09-22 2001-11-06 Nikon Corporation Method of manufacturing an optical system
JP2001227909A (ja) 2000-02-17 2001-08-24 Nikon Corp 点回折干渉計、反射鏡の製造方法及び投影露光装置

Also Published As

Publication number Publication date
JP2005241603A (ja) 2005-09-08
US20050190377A1 (en) 2005-09-01
US7304749B2 (en) 2007-12-04

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