JP4387111B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4387111B2
JP4387111B2 JP2003011775A JP2003011775A JP4387111B2 JP 4387111 B2 JP4387111 B2 JP 4387111B2 JP 2003011775 A JP2003011775 A JP 2003011775A JP 2003011775 A JP2003011775 A JP 2003011775A JP 4387111 B2 JP4387111 B2 JP 4387111B2
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JP
Japan
Prior art keywords
laser
semiconductor film
channel formation
region
laser beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2003011775A
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English (en)
Japanese (ja)
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JP2003289080A5 (enExample
JP2003289080A (ja
Inventor
舜平 山崎
幸一郎 田中
秀和 宮入
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2003011775A priority Critical patent/JP4387111B2/ja
Publication of JP2003289080A publication Critical patent/JP2003289080A/ja
Publication of JP2003289080A5 publication Critical patent/JP2003289080A5/ja
Application granted granted Critical
Publication of JP4387111B2 publication Critical patent/JP4387111B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • B23K26/0732—Shaping the laser spot into a rectangular shape
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • B23K26/0738—Shaping the laser spot into a linear shape

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
JP2003011775A 2002-01-24 2003-01-21 半導体装置の作製方法 Expired - Fee Related JP4387111B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003011775A JP4387111B2 (ja) 2002-01-24 2003-01-21 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002-16211 2002-01-24
JP2002016211 2002-01-24
JP2003011775A JP4387111B2 (ja) 2002-01-24 2003-01-21 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2003289080A JP2003289080A (ja) 2003-10-10
JP2003289080A5 JP2003289080A5 (enExample) 2006-03-09
JP4387111B2 true JP4387111B2 (ja) 2009-12-16

Family

ID=29253180

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003011775A Expired - Fee Related JP4387111B2 (ja) 2002-01-24 2003-01-21 半導体装置の作製方法

Country Status (1)

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JP (1) JP4387111B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102437196A (zh) * 2011-12-15 2012-05-02 昆山工研院新型平板显示技术中心有限公司 低温多晶硅薄膜晶体管及其制造方法

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4689159B2 (ja) 2003-10-28 2011-05-25 株式会社半導体エネルギー研究所 液滴吐出システム
EP1728271B1 (en) * 2004-03-26 2016-06-08 Semiconductor Energy Laboratory Co, Ltd. Laser irradiation method and laser irradiation apparatus
US8525075B2 (en) 2004-05-06 2013-09-03 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus
JP4951214B2 (ja) * 2004-06-10 2012-06-13 株式会社半導体エネルギー研究所 レーザ光を照射する方法及び装置、並びに非単結晶半導体膜をアニールする方法及び半導体装置を作製する方法
JP2006066908A (ja) * 2004-07-30 2006-03-09 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2008218468A (ja) * 2007-02-28 2008-09-18 Univ Of Ryukyus ３次元集積回路装置及びその製造方法
JP5268493B2 (ja) * 2008-08-11 2013-08-21 凸版印刷株式会社 電源装置及び不揮発性メモリ装置
JP5263747B2 (ja) * 2010-05-31 2013-08-14 国立大学法人 琉球大学 ３次元集積回路装置の製造方法
FR3026559B1 (fr) * 2014-09-30 2017-12-22 Commissariat Energie Atomique Procede de recuit localise d'elements semi-conducteurs a l'aide d'une zone reflectrice
US9954112B2 (en) 2015-01-26 2018-04-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4409724A (en) * 1980-11-03 1983-10-18 Texas Instruments Incorporated Method of fabricating display with semiconductor circuits on monolithic structure and flat panel display produced thereby
JPS6315471A (ja) * 1986-07-07 1988-01-22 Seiko Instr & Electronics Ltd 薄膜トランジスタとその製造方法
JPH05175235A (ja) * 1991-12-25 1993-07-13 Sharp Corp 多結晶半導体薄膜の製造方法
JP2000068520A (ja) * 1997-12-17 2000-03-03 Matsushita Electric Ind Co Ltd 半導体薄膜、その製造方法、および製造装置、ならびに半導体素子、およびその製造方法
JP4558262B2 (ja) * 2001-08-30 2010-10-06 シャープ株式会社 半導体装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102437196A (zh) * 2011-12-15 2012-05-02 昆山工研院新型平板显示技术中心有限公司 低温多晶硅薄膜晶体管及其制造方法

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Publication number Publication date
JP2003289080A (ja) 2003-10-10

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