JP4385360B2 - プラズマ真空ポンプセル - Google Patents
プラズマ真空ポンプセル Download PDFInfo
- Publication number
- JP4385360B2 JP4385360B2 JP2000557077A JP2000557077A JP4385360B2 JP 4385360 B2 JP4385360 B2 JP 4385360B2 JP 2000557077 A JP2000557077 A JP 2000557077A JP 2000557077 A JP2000557077 A JP 2000557077A JP 4385360 B2 JP4385360 B2 JP 4385360B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- conduit
- plasma
- pump cell
- ions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 150000002500 ions Chemical class 0.000 claims description 98
- 238000005192 partition Methods 0.000 claims description 61
- 238000000034 method Methods 0.000 claims description 36
- 239000003574 free electron Substances 0.000 claims description 22
- 230000005684 electric field Effects 0.000 claims description 16
- 230000005686 electrostatic field Effects 0.000 claims description 12
- 239000000919 ceramic Substances 0.000 claims description 4
- 238000004891 communication Methods 0.000 claims description 4
- 238000000638 solvent extraction Methods 0.000 claims 4
- 239000004020 conductor Substances 0.000 claims 2
- 239000012777 electrically insulating material Substances 0.000 claims 2
- 230000001939 inductive effect Effects 0.000 claims 2
- 230000037237 body shape Effects 0.000 claims 1
- 239000007789 gas Substances 0.000 description 82
- 238000012545 processing Methods 0.000 description 38
- 239000000758 substrate Substances 0.000 description 36
- 230000008569 process Effects 0.000 description 28
- 230000007935 neutral effect Effects 0.000 description 22
- 239000002245 particle Substances 0.000 description 10
- 239000012809 cooling fluid Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 230000007246 mechanism Effects 0.000 description 8
- 230000006835 compression Effects 0.000 description 6
- 238000007906 compression Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- 238000005421 electrostatic potential Methods 0.000 description 5
- 238000005086 pumping Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 150000001768 cations Chemical class 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000005672 electromagnetic field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000006386 neutralization reaction Methods 0.000 description 2
- 230000003472 neutralizing effect Effects 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000006249 magnetic particle Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000002085 persistent effect Effects 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
- F04B—POSITIVE-DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS
- F04B17/00—Pumps characterised by combination with, or adaptation to, specific driving engines or motors
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
- F04B—POSITIVE-DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS
- F04B37/00—Pumps having pertinent characteristics not provided for in, or of interest apart from, groups F04B25/00 - F04B35/00
- F04B37/10—Pumps having pertinent characteristics not provided for in, or of interest apart from, groups F04B25/00 - F04B35/00 for special use
- F04B37/14—Pumps having pertinent characteristics not provided for in, or of interest apart from, groups F04B25/00 - F04B35/00 for special use to obtain high vacuum
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J41/00—Discharge tubes for measuring pressure of introduced gas or for detecting presence of gas; Discharge tubes for evacuation by diffusion of ions
- H01J41/12—Discharge tubes for evacuating by diffusion of ions, e.g. ion pumps, getter ion pumps
- H01J41/14—Discharge tubes for evacuating by diffusion of ions, e.g. ion pumps, getter ion pumps with ionisation by means of thermionic cathodes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/54—Plasma accelerators
Landscapes
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Compressors, Vaccum Pumps And Other Relevant Systems (AREA)
- Electron Tubes For Measurement (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US9104198P | 1998-06-29 | 1998-06-29 | |
| US60/091,041 | 1998-06-29 | ||
| PCT/US1999/012827 WO2000000741A1 (en) | 1998-06-29 | 1999-06-29 | Plasma vacuum pumping cell |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002519827A JP2002519827A (ja) | 2002-07-02 |
| JP2002519827A5 JP2002519827A5 (enExample) | 2009-09-10 |
| JP4385360B2 true JP4385360B2 (ja) | 2009-12-16 |
Family
ID=22225599
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000557077A Expired - Fee Related JP4385360B2 (ja) | 1998-06-29 | 1999-06-29 | プラズマ真空ポンプセル |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6422825B2 (enExample) |
| EP (1) | EP1095217A4 (enExample) |
| JP (1) | JP4385360B2 (enExample) |
| KR (1) | KR100611826B1 (enExample) |
| WO (1) | WO2000000741A1 (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6592709B1 (en) | 2000-04-05 | 2003-07-15 | Applied Materials Inc. | Method and apparatus for plasma processing |
| US6873113B2 (en) * | 2000-04-13 | 2005-03-29 | Tokyo Electron Limited | Stand alone plasma vacuum pump |
| WO2002103745A1 (en) * | 2001-06-14 | 2002-12-27 | Tokyo Electron Limited | Ion momentum transfer plasma pump |
| WO2002104085A2 (en) * | 2001-06-19 | 2002-12-27 | Toky0 Electron Limited | A closed-drift hall effect plasma vacuum pump for process reactors |
| WO2003005406A1 (en) | 2001-07-03 | 2003-01-16 | Tokyo Electron Limited | Plasma pump with inter-stage plasma source |
| US6729850B2 (en) | 2001-10-31 | 2004-05-04 | Tokyo Electron Limited | Applied plasma duct system |
| AU2003253689A1 (en) * | 2002-07-31 | 2004-02-16 | Tokyo Electron Limited | Reduced volume, high conductance process chamber |
| JP4724880B2 (ja) * | 2005-03-03 | 2011-07-13 | 独立行政法人産業技術総合研究所 | プラズマ媒質電池 |
| DE102006036461A1 (de) * | 2006-08-04 | 2008-02-21 | Johann Wolfgang Goethe-Universität | Vorrichtung und Verfahren zur Steuerung eines Gasflusses |
| JP2015501918A (ja) * | 2011-11-09 | 2015-01-19 | ブレント フリーゼ, | プラズマを高エネルギー状態に圧縮するための方法および装置 |
| US9679751B2 (en) * | 2012-03-15 | 2017-06-13 | Lam Research Corporation | Chamber filler kit for plasma etch chamber useful for fast gas switching |
| US20140360670A1 (en) * | 2013-06-05 | 2014-12-11 | Tokyo Electron Limited | Processing system for non-ambipolar electron plasma (nep) treatment of a substrate with sheath potential |
| US10037869B2 (en) | 2013-08-13 | 2018-07-31 | Lam Research Corporation | Plasma processing devices having multi-port valve assemblies |
| US10455683B2 (en) * | 2016-05-31 | 2019-10-22 | Agilent Technologies, Inc. | Ion throughput pump and method |
| US12014901B2 (en) | 2018-10-25 | 2024-06-18 | Tokyo Electron Limited | Tailored electron energy distribution function by new plasma source: hybrid electron beam and RF plasma |
| US11205562B2 (en) | 2018-10-25 | 2021-12-21 | Tokyo Electron Limited | Hybrid electron beam and RF plasma system for controlled content of radicals and ions |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3005931A (en) * | 1960-03-29 | 1961-10-24 | Raphael A Dandl | Ion gun |
| US3453469A (en) * | 1965-05-20 | 1969-07-01 | Xerox Corp | Multi-level vacuum pumping system for plasma containment device |
| US3416722A (en) * | 1967-04-05 | 1968-12-17 | Varian Associates | High vacuum pump employing apertured penning cells driving ion beams into a target covered by a getter sublimator |
| US3746474A (en) * | 1971-04-02 | 1973-07-17 | W Lloyd | Ionic vacuum pump |
| JPS6011422B2 (ja) * | 1977-11-24 | 1985-03-26 | 株式会社日立製作所 | 差動排気用イオンポンプ |
| US4397611A (en) * | 1981-07-06 | 1983-08-09 | The Perkin-Elmer Corp. | Particle beam instrumentation ion pump |
| US4641060A (en) | 1985-02-11 | 1987-02-03 | Applied Microwave Plasma Concepts, Inc. | Method and apparatus using electron cyclotron heated plasma for vacuum pumping |
| UA27921C2 (uk) * | 1993-06-21 | 2000-10-16 | Сосьєте Національ Д`Етюд Ет Де Конструкцьон Де Мотер Д`Авіацьон (С.Н.Е.К.М.А.) | Плазмовий двигун зменшеної довжини з замкненим дрейфом електронів |
| US5646488A (en) * | 1995-10-11 | 1997-07-08 | Warburton; William K. | Differential pumping stage with line of sight pumping mechanism |
| US6229264B1 (en) * | 1999-03-31 | 2001-05-08 | Lam Research Corporation | Plasma processor with coil having variable rf coupling |
-
1999
- 1999-06-29 WO PCT/US1999/012827 patent/WO2000000741A1/en not_active Ceased
- 1999-06-29 JP JP2000557077A patent/JP4385360B2/ja not_active Expired - Fee Related
- 1999-06-29 EP EP99930173A patent/EP1095217A4/en not_active Withdrawn
- 1999-06-29 KR KR1020007014821A patent/KR100611826B1/ko not_active Expired - Fee Related
-
2000
- 2000-12-28 US US09/749,469 patent/US6422825B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US20010016166A1 (en) | 2001-08-23 |
| EP1095217A1 (en) | 2001-05-02 |
| EP1095217A4 (en) | 2006-08-02 |
| JP2002519827A (ja) | 2002-07-02 |
| KR20010053216A (ko) | 2001-06-25 |
| US6422825B2 (en) | 2002-07-23 |
| WO2000000741A1 (en) | 2000-01-06 |
| KR100611826B1 (ko) | 2006-08-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4385360B2 (ja) | プラズマ真空ポンプセル | |
| US6819053B2 (en) | Hall effect ion source at high current density | |
| JP2886978B2 (ja) | 電子サイクロトロン共鳴プラズマ源及び操作方法 | |
| JP3868483B2 (ja) | 矩形真空アークプラズマ源 | |
| US5554857A (en) | Method and apparatus for ion beam formation in an ion implanter | |
| US5022977A (en) | Ion generation apparatus and thin film forming apparatus and ion source utilizing the ion generation apparatus | |
| US6396024B1 (en) | Permanent magnet ECR plasma source with integrated multipolar magnetic confinement | |
| US5899666A (en) | Ion drag vacuum pump | |
| US5620522A (en) | Microwave plasma generator | |
| US6729850B2 (en) | Applied plasma duct system | |
| US6225592B1 (en) | Method and apparatus for launching microwave energy into a plasma processing chamber | |
| US6559601B1 (en) | Plasma vacuum pump | |
| RU2106716C1 (ru) | Установка для микроволновой вакуумно-плазменной обработки конденсированных сред | |
| US6899527B2 (en) | Closed-drift hall effect plasma vacuum pump for process reactors | |
| JP3064214B2 (ja) | 高速原子線源 | |
| JPH01310179A (ja) | Ecr型イオンスラスタ | |
| JPH089778B2 (ja) | イオン源 | |
| JPH09270234A (ja) | チャンバ挿入型ecr低エネルギ−イオン銃 | |
| JP2018005978A (ja) | ガスクラスタービーム装置 | |
| JP3624986B2 (ja) | ビーム加工方法及び装置 | |
| JPH07211488A (ja) | プラズマ処理装置及び処理方法 | |
| CN120183991A (zh) | 半导体工艺设备 | |
| WO2002103745A1 (en) | Ion momentum transfer plasma pump | |
| JPH0483338A (ja) | 電子サイクロトロン共鳴エッチング装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20060511 |
|
| A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20070907 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20070907 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090324 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20090624 |
|
| A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20090701 |
|
| A524 | Written submission of copy of amendment under article 19 pct |
Free format text: JAPANESE INTERMEDIATE CODE: A524 Effective date: 20090724 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20090825 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20090918 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121009 Year of fee payment: 3 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20151009 Year of fee payment: 6 |
|
| LAPS | Cancellation because of no payment of annual fees |