JP4369109B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4369109B2
JP4369109B2 JP2002330011A JP2002330011A JP4369109B2 JP 4369109 B2 JP4369109 B2 JP 4369109B2 JP 2002330011 A JP2002330011 A JP 2002330011A JP 2002330011 A JP2002330011 A JP 2002330011A JP 4369109 B2 JP4369109 B2 JP 4369109B2
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Japan
Prior art keywords
pair
region
film
island
crystalline silicon
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Expired - Fee Related
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JP2002330011A
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English (en)
Japanese (ja)
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JP2003218362A5 (enrdf_load_stackoverflow
JP2003218362A (ja
Inventor
昌彦 早川
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2002330011A priority Critical patent/JP4369109B2/ja
Publication of JP2003218362A publication Critical patent/JP2003218362A/ja
Publication of JP2003218362A5 publication Critical patent/JP2003218362A5/ja
Application granted granted Critical
Publication of JP4369109B2 publication Critical patent/JP4369109B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon

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  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2002330011A 2001-11-14 2002-11-13 半導体装置の作製方法 Expired - Fee Related JP4369109B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002330011A JP4369109B2 (ja) 2001-11-14 2002-11-13 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001349308 2001-11-14
JP2001-349308 2001-11-14
JP2002330011A JP4369109B2 (ja) 2001-11-14 2002-11-13 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2003218362A JP2003218362A (ja) 2003-07-31
JP2003218362A5 JP2003218362A5 (enrdf_load_stackoverflow) 2005-12-22
JP4369109B2 true JP4369109B2 (ja) 2009-11-18

Family

ID=27667219

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002330011A Expired - Fee Related JP4369109B2 (ja) 2001-11-14 2002-11-13 半導体装置の作製方法

Country Status (1)

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JP (1) JP4369109B2 (enrdf_load_stackoverflow)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7972943B2 (en) * 2007-03-02 2011-07-05 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US7569886B2 (en) 2007-03-08 2009-08-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacture method thereof
US9177811B2 (en) 2007-03-23 2015-11-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5512931B2 (ja) 2007-03-26 2014-06-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5512930B2 (ja) 2007-03-26 2014-06-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2009049058A (ja) * 2007-08-14 2009-03-05 Hitachi Displays Ltd 半導体装置および表示装置
KR101329352B1 (ko) 2007-10-17 2013-11-13 삼성전자주식회사 반도체 장치의 제조방법
JP2010206154A (ja) * 2009-02-09 2010-09-16 Hitachi Displays Ltd 表示装置
JP2011124441A (ja) * 2009-12-11 2011-06-23 Utec:Kk 結晶化膜の製造方法及び結晶化装置
JP2014179465A (ja) 2013-03-14 2014-09-25 Toshiba Corp 不揮発性半導体記憶装置およびその製造方法
JP2017103260A (ja) * 2014-03-31 2017-06-08 株式会社東芝 トランジスタ、および、トランジスタの製造方法
KR102250044B1 (ko) 2014-07-04 2021-05-11 삼성디스플레이 주식회사 박막트랜지스터 기판 제조방법, 디스플레이 장치 제조방법, 박막트랜지스터 기판 및 디스플레이 장치
US9954112B2 (en) 2015-01-26 2018-04-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof

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JP2003218362A (ja) 2003-07-31

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