JP4364494B2 - Plasma surface treatment equipment - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a surface processing apparatus such as plasma CVD, and more particularly to a surface processing apparatus having a nozzle head that blows a processing gas onto an object to be processed.
[0002]
[Prior art]
For example, Patent Document 1 describes a plasma surface treatment apparatus including a nozzle head. The nozzle head includes a pair of electrodes (reaction means) between which a process gas passage is formed. A processing gas is made into plasma by passing between these electrodes, and is sprayed onto the object to be processed from the blowout port at the tip to perform surface treatment of the object to be processed.
[0003]
[Patent Document 1]
JP 11-251304 A (first page, FIG. 2)
[0004]
[Problems to be solved by the invention]
In this type of surface treatment apparatus, dirt easily adheres around the outlet of the nozzle head. In particular, when used for the purpose of film formation, a film (dirt) is formed when the processing gas serving as a film material touches not only the surface of the object to be processed but also the nozzle head outlet after plasma formation. For this reason, the nozzle head must be frequently washed to remove dirt, and it is not only cumbersome to wash the entire head, but also the surface treatment must be interrupted during washing. .
[0005]
[Means for Solving the Problems]
In order to solve the above-mentioned problems, the present invention is a plasma surface processing apparatus for converting a processing gas into plasma and spraying the processing object on the object to be processed, and performing surface treatment of the object to be processed, in which the longitudinal direction is parallel to the horizontal direction. The nozzle tip comprises a head body which has a flat electrode at the bottom, forms a discharge space with the electrode, and converts the processing gas into plasma in the discharge space, a nozzle tip constituent member, and support means. The component member has a slit-shaped blowout opening connected to the discharge space, covers the lower surface of the head body, and detachably mounts and supports the head body, and a peripheral edge of the nozzle plate. and a lower frame, the nozzle tip constituting member so as to leave on the workpiece, said support means, detachable lower frame of the nozzle tip constituting member Characterized in that it support. As a result, even if dirt is attached around the air outlet, the nozzle tip constituent member can be easily removed from the head body, and only the nozzle tip constituent member is washed, for example, immersed in a chemical solution such as strong acid. Can do. Therefore, it is not necessary to bring the entire nozzle head including the head body and the tip constituent member to the cleaning process, and the maintenance can be facilitated. Further, if a spare nozzle tip component member is prepared and attached to the tip of the head body, the surface treatment can be performed without interruption even during maintenance.
[0006]
The tip of the head body is placed on the nozzle tip component member facing downward, and the support means supports the nozzle tip component member and thus the nozzle head separately on the object to be processed. It is desirable. Thus, a downward nozzle head can be configured. Further, the head main body can be set by simply placing it on the nozzle tip constituent member, and as a result, the nozzle tip constituent member can be taken away from the head main body simply by pulling up the head main body during maintenance.
[0007]
It is desirable that the support means is an exhaust duct that has a suction port that opens downward and surrounds the head body and the nozzle tip constituent member. Thereby, it is possible to prevent the exhaust gas composed of the processing gas and by-products after sprayed on the object to be processed from staying between the nozzle tip constituent member and the object to be processed, and smoothly discharge it. As a result, it can reduce that a nozzle tip constituent member gets dirty, and can reduce the frequency of maintenance. In addition, since the support means and the exhaust duct are made of a common member, the number of parts can be reduced.
It is preferable that a hook for hooking the lower frame of the nozzle tip constituting member is formed on the inner peripheral edge of the lower end portion of the exhaust duct.
[0008]
It is desirable that the support means has a frame shape surrounding the nozzle tip constituent member, a ridge protruding inward is formed at the periphery, and a step that is hooked on the ridge is formed in the lower frame. . As a result, the nozzle head can be reliably supported by hooking the lower frame of the nozzle tip constituent member onto the ridge and placing the head body on the nozzle plate . Further, the nozzle tip constituting member can be easily separated from the head body by pulling up and taking out the head body.
[0009]
Positioning convex portions are provided on one of the longitudinal ends of the head body and locations corresponding to the both ends of the support means, and positioning concave portions that are vertically fitted to the positioning convex portions are provided on the other side. It is desirable that the positioning convex portion and the positioning concave portion have a triangular shape having a corner at a central portion in the width direction orthogonal to the longitudinal direction and slopes on both sides of the corner . Thus, the nozzle head can be reliably positioned on the support means.
[0010]
As a reaction means, and the electrode has an electric field applying means for applying an electric field to the electrodes, the plasma process gas by spraying the workpiece from the outlet, formed on the surface of the object to be processed A plasma film forming apparatus for performing the above may be configured. In such a film forming apparatus, dirt is particularly easily attached around the outlet, but according to the present invention, maintenance for removing dirt can be easily performed.
[0011]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below with reference to the drawings.
FIG. 1 shows a plasma film forming apparatus M1 (surface treatment apparatus) according to the first embodiment of the present invention. The plasma film forming apparatus M1 includes a head unit 3 supported on a gantry (not shown), gas sources 1 and 2 and a power source 4 connected to the head unit 3. Below the head unit 3, a large-area plate-like substrate (object to be processed) W is sent along the direction indicated by the arrow a (from rear to front) by a conveying means (not shown). Of course, the base unit W may be fixed and the head unit 3 may be moved. The plasma film forming apparatus M1 forms a film A (FIG. 4) such as amorphous silicon (a-Si), silicon nitride (SiN), silicon oxide (SiO ₂ ) or the like on the upper surface of the substrate W. Yes.
[0012]
The source gas source 1 (first process gas source) includes a source gas (first process gas, for example, silane (SiH ₄ ) for a-Si or SiN, TEOS or TMOS for SiO ₂ . ) Is stored. The excitation gas source 2 (second processing gas source) is excited by plasma to react with the raw materials to generate a film A (second processing gas, for example, hydrogen for a-Si, Nitrogen is stored for SiN and oxygen is stored for SiO ₂ . The excitation gas is excited by plasma, but does not include a component that is formed into a film by itself by excitation.
[0013]
The pulse power supply 4 (electric field applying means) outputs a pulse voltage to the electrode 51 described later. It is desirable that the rise time and / or fall time of this pulse is 10 μs or less, the electric field strength is 1-1000 kV / cm, and the frequency is 0.5 kHz or more.
[0014]
The head unit 3 includes an outer casing 10 and a nozzle head 20 accommodated in the outer casing 10. The outer casing 10 has, for example, a front-rear semicircular wall 11 and left and right lower walls 12 that connect lower ends of the walls 11 and has a quadrangular shape in plan view. The outer casing 10 also serves as an exhaust duct. That is, as shown in FIGS. 4 to 7, the front and rear walls 11 and 12 of the outer casing 10 are hollow. The lower end portions of these hollow portions 10 b form suction ports 10 a that surround the outer periphery of the lower end of the nozzle head 20 by opening on the lower end surfaces of the walls 11 and 12. As shown in FIG. 1, horizontally long openings 11 b connected to the hollow portions 10 b are provided at the upper ends of the front and rear walls 11. Exhaust passages 13 extend from these upper end openings 11b. The exhaust passages 13 are connected to the vacuum pump 14 (exhaust means) after merging with each other.
[0015]
The nozzle head 20 has a substantially rectangular parallelepiped shape that is long to the left and right, and is housed and supported in the outer casing 10 so as to be surrounded by the front and rear walls 11 and 12. Details of this support structure will be described later.
[0016]
As shown in FIGS. 1 to 4, the nozzle head 20 is configured by vertically stacking a gas uniformizing unit 30 and an electrode unit 21. The gas from the gas sources 1 and 2 is introduced into the upper gas homogenizer 30. The gas homogenizing unit 30 makes the gas uniform in the longitudinal direction of the nozzle head 20 and supplies the gas to the lower electrode unit 21.
[0017]
More specifically, as shown in FIGS. 2 and 3, the gas homogenizer 30 is configured by laminating a plurality of steel plates 31 to 38 extending left and right. Three gas circulation regions 30F, 30M, and 30R are virtually set in the front and rear of the plates 31 to 38, that is, the entire gas uniformizing unit 30.
[0018]
As shown in FIG. 1, three gas plugs 32P are provided at the left end (one end) of the second-stage plate 32 so as to be arranged in the front-rear direction corresponding to the regions 30F, 30M, 30R. The source gas source 1 is connected to the gas plug 32P in the center source gas circulation region 30M via a source gas pipe 1a. The excitation gas source 2 is connected to the gas plugs 32P in the front and rear excitation gas flow regions 30F and 30R via the excitation gas pipe 2a. The excitation gas pipe 2a extends from the excitation gas source 2 in the form of a single pipe, which is branched into two and connected to the gas plugs 32P in the regions 30F and 30R.
[0019]
As shown in FIG. 2, a gas uniformizing path 30a is formed in each of the regions 30F, 30M, and 30R in the plates 32 to 38 from the second stage to the lowest stage. These gas homogenization paths 30a have the same configuration.
[0020]
As shown in FIG. 2 and FIG. 3, an inlet port 32b to which the gas plug 32P is connected is formed at the left end of the second stage plate 32 as the gas homogenization path 30a of each region 30F, 30M, 30R. In addition, a deep inverted groove 32a extending from the port 32b to the left and right center of the plate 32 is formed so as to open to the lower surface. A pair of front and rear communication holes 33a and 33b connected to the inverted concave groove 32a are formed at the left and right central portions of the third-stage plate 33. The plate 34 in the fourth stage is connected to the communication hole 33a and extends to the right, the communication hole 34c extending from the terminal end (right end) of the groove 34a to the lower surface, and the communication hole 33b. A groove 34b extending in the direction and a communication hole 34d extending from the terminal end (left end) of the groove 34b to the lower surface are formed. The fifth-stage plate 35 includes a groove 35a that extends to the communication hole 34c and extends substantially over the entire length in the left-right longitudinal direction, a groove 35b that extends to the communication hole 34d and extends over the entire length of the left-right longitudinal direction, A large number of pores (pressure loss forming passages) 35c and 35d are formed extending from the grooves 35a and 35b to the lower surface and arranged at equal pitches on the left and right. The sixth-stage plate 36 has a wide groove (expansion chamber) 36a that extends to substantially the entire length in the left-right longitudinal direction, and extends from the groove 36a to the lower surface and is equidistant from side to side with the pores 35c, 35d. Thus, a large number of pores (pressure loss forming paths) 36b arranged in a staggered manner in two rows are formed. The seventh-stage plate 37 has a wide groove (expansion chamber) 37a that extends to the pore 36b and extends over substantially the entire length in the left-right longitudinal direction, and extends from the groove 37a to the lower surface and is staggered at equal pitches on the left and right. A large number of pores (pressure loss forming passages) 37b arranged in two rows are formed. The lowermost plate 38 is formed with a wide through hole (expansion chamber) 38a that is continuous with the pore 37b and extends over substantially the entire length in the left-right longitudinal direction. The through hole 38a constitutes the downstream end of the gas homogenization path 30a. As will be described later, the through hole 38a communicates with guide paths 27f, 27m, and 27r of the insulating plate 27 described later.
[0021]
The uppermost plate 31 accommodates a thin and long plate heater 31H for heating the gas homogenization path 30a in each of the regions 30F, 30M, and 30R so as to extend left and right. In the plates 32 to 38 from the second stage to the lowest stage, slits 30s are formed along the boundaries of the regions 30F, 30M, and 30R. As a result, the regions 30F, 30M, and 30R are thermally bordered.
1 and 2, reference numeral 39S is a bolt for connecting the uppermost plate and the second-stage plate 31, 32, and reference numeral 39L is a bolt for connecting the plates 32-38 from the second stage to the lowermost stage. is there.
[0022]
Next, the electrode part 21 of the nozzle head 20 will be described. As shown in FIGS. 4 to 6, the electrode portion 21 includes front and rear wall members 22, 23, an electrode unit 50 surrounded by the wall members 22, 23, and insulation covered on the electrode unit 50. A plate 27 and a nozzle tip constituting member 21A for closing the lower surfaces (tip surfaces) of the wall members 22 and 23 are provided.
The “head body” in the claims is constituted by the constituent members 22, 23, 27, 50 other than the nozzle tip constituent member 21 </ b> A of the electrode portion 21 and the gas uniformizing portion 40.
[0023]
As shown in FIGS. 4 and 6, the front and rear wall members 22 of the electrode portion 21 are made of metal such as stainless steel and extend long in the left and right directions. These wall members 22 are connected to the lowermost plate 38 of the gas uniformizing unit 30 by bolts 26A.
[0024]
As shown in FIGS. 5 and 6, the left and right wall members 23 of the electrode portion 21 are made of an insulating resin and are spanned between the left and right end portions of the wall member 22. As shown in FIGS. 1 and 5, a positioning convex portion 23 a having a lower edge forming an inverted triangular shape is provided on the outer surface of each wall member 23. On the other hand, positioning recesses 12 b that are recessed in an inverted triangle shape are formed on the upper end surfaces of the left and right low walls 12 of the outer casing 10. By positioning the positioning convex portion 23a on the positioning concave portion 12b, the nozzle head 20 is positioned and supported by the outer casing 10.
[0025]
As shown in FIGS. 1 to 3, the insulating plate 27 is made of ceramic (insulator), and is sandwiched from above and below by the lowermost plate 38 and the electrode unit 50 of the gas homogenizing unit 30. As shown in FIGS. 3 and 4, the insulating plate 27 is formed with three gas guiding paths 27f, 27m, and 27r extending substantially over the entire length in the left-right longitudinal direction so as to be separated from each other in the front-rear direction. The central source gas guide path 27m is continuous with the through hole 38a in the central region 30M of the plate 38 and vertically penetrates the insulating plate 27. The front side excitation gas guide path 27f is continuous with the through hole 38a of the front side region 30F, and tilts backward from the upper surface of the insulating plate 27 and reaches the lower surface of the plate 27. The rear excitation gas guide path 27r is continuous with the through hole 38a in the rear region 30R, and tilts forward from the upper surface of the insulating plate 27 to reach the lower surface of the plate 27.
[0026]
As shown in FIGS. 4 to 7, the electrode unit 50 includes four electrodes 51, 52 that are elongated in the left and right directions and are arranged in parallel in the front and rear directions, and have the electrodes 51, 52. A presser plate 53 sandwiched from the front and the rear and a holding plate 54 sandwiched from the left and right are provided. Of the four electrodes 51, 52, the middle two are electric field application electrodes 51, and the two front and rear ends are ground electrodes 52.
[0027]
That is, as shown in FIGS. 5 and 6, the power supply pins 40 are embedded in, for example, the left ends of the two inner electrodes 51. The head of the power supply pin 40 protrudes from the left holding plate 54. A power supply line 4 a is connected to the head of the power supply pin 40. The power supply line 4a passes between the upper surface of the left wall member 23 and the insulating plate 27 and is led out of the nozzle head 20 and connected to the pulse power source 4 (see FIG. 1).
[0028]
Similarly, as shown in FIG. 7, power supply pins 40 </ b> A are embedded in the right end portions of the two electrodes 52 at both the front and rear ends. The head of the power feed pin 40 </ b> A protrudes from the right holding plate 54. The ground wire 4b is connected to the head of the power feed pin 40A. The ground line 4b passes between the upper surface of the right wall member 23 and the insulating plate 27 and is drawn out of the nozzle head 20 and is grounded.
The electrodes 51 and 52 and the pulse power supply 4 constitute “reaction means” in the claims.
[0029]
Between the ground electrode 52 on the front side and the electric field application electrode 51 (a pair of electrodes), a gap 50f is formed that is continuous with the excitation gas guide path 27f on the front side of the insulating plate 27. A gap 50m is formed between the middle pair of electric field applying electrodes 51 and is connected to the central source gas guide path 27m. Between the rear ground electrode 52 and the electric field applying electrode 51 (a pair of electrodes), a gap 50r is formed which is continuous with the rear excited gas guiding path 27r.
The gas homogenization path 30a of the regions 30F, 30M, 30R of the gas homogenizer 30; the induction paths 27f, 27m, 27r of the insulating plate 27; and the gaps 50f, 50m, 50r between the electrodes 51, 52 The “processing gas passage” in the claims is configured.
[0030]
The holding plates 54 made of insulating resin are respectively addressed to both end surfaces of the four electrodes 51 and 52 in the longitudinal direction. Each holding plate 54 is provided with three plate-like spacers 55 made of insulating resin. The gaps 50f, 50m, and 50r are secured by inserting the plate-like spacers 55 between the electrodes 51 and 52.
[0031]
The pressing plates 53 made of an insulator are attached to the back surfaces of the front and rear ground electrodes 52 (the surface opposite to the side facing the electrode 51). A bolt 26 screwed from the wall member 22 is abutted against the back surface of the presser plate 53. Thus, the electrode unit 50 is accurately positioned and held.
As shown in FIGS. 4 and 5 to 7, a dielectric material such as ceramic is thermally sprayed on the side surface and the upper and lower surfaces facing the gaps 50 f and 50 r in the electrodes 51 and 52 made of a metal conductor. Thus, the solid dielectric layer 59 is coated. As the solid dielectric layer, instead of the sprayed film 59, a dielectric case for detachably storing the electrodes 51 and 52 may be used, and a resin such as tetrafluoroethylene attached to the electrodes 51 and 52 may be used. A sheet may be used.
[0032]
Next, the nozzle tip constituent member 21A disposed on the lower surface (tip surface) of the electrode portion 21 will be described. As shown in FIG. 4, the nozzle tip constituting member 21 </ b> A includes a rectangular frame-like lower frame 24 made of a metal such as stainless steel, and a rectangular nozzle plate 25 made of a ceramic (dielectric material, insulator) such as alumina. It is configured.
[0033]
As shown in FIGS. 4, 5, and 7, the periphery of the lower frame 24 has an inner flange 11 d (鍔) provided at the lower end edge of the inner peripheral surface of the front and rear walls 11 of the outer casing 10, and left and right The wall 12 is placed and supported so as to be hooked on an inner flange 12d (鍔) provided at the lower end edge of the inner peripheral surface of the wall 12. On the upper surface of the lower frame 24, wall members 22 before and after the electrode portion 21 are placed and supported.
[0034]
As shown in FIGS. 4 and 5, a step 24 a is formed on the inner peripheral edge of the lower frame 24. The step 24a is placed and supported so that the peripheral edge of the nozzle plate 25 is hooked. An electrode unit receiving portion 25 a is recessed on the upper surface of the nozzle plate 25. The electrode unit 50 is placed on and supported by the receiving portion 25a.
[0035]
As shown in FIGS. 4 and 7, the nozzle plate 25 is formed with three outlets 25f, 25m, and 25r penetrating from the concave portion 25a on the upper surface to the lower surface. These outlets 25f, 25m, and 25r extend in a slit shape on the left and right, and are arranged in parallel at equal intervals in the front and rear. A front gap 50f of the electrode unit 50 is connected to the front outlet 25f. A central gap 50m is connected to the central outlet 25m. A rear gap 50r is connected to the rear outlet 25r.
[0036]
The operation of the plasma film forming apparatus M1 configured as described above will be described.
The source gas from the source gas source 1 is introduced into the gas homogenization path 30a in the region 30M from the gas plug 32P at the center of the nozzle head 20 through the gas pipe 1a and is made uniform in the left-right longitudinal direction. After that, it passes through the central guide path 27 m and passes through the gap 50 m between the two electric field applying electrodes 51. As will be described later, a pulse electric field is applied to each electric field applying electrode 51, but no discharge occurs in the gap 50m, so that the source gas passes through the gap 50m without being converted into plasma. Therefore, it is possible to prevent the film or the like from becoming dirty on the opposing surfaces (surfaces where the gap 50 m is formed) between the electric field applying electrodes 51. Thereafter, the raw material gas is blown out from the blowout port 25m, and flows between the nozzle plate 25 and the base material W in two directions in the front-rear direction (see white arrows in FIG. 3).
[0037]
Simultaneously with the flow of the source gas, the excitation gas from the excitation gas source 2 is introduced into the gas homogenization path 30a in the regions 30F and 30R from the two plugs 32P before and after the nozzle head 20 via the gas pipe 2a. After being made uniform in the left-right longitudinal direction by these paths 30a, they are guided to the front and rear gaps 50f, 50r via the guide paths 27f, 27r.
[0038]
On the other hand, a pulse voltage from the pulse power supply 4 is applied between the electric field application electrode 51 and the ground electrode 52. As a result, glow discharge is generated in the gaps 50f and 50r between the electrodes 51 and 52, and the excitation gas is turned into plasma (excitation and activation). The excitation gas itself does not contain any components that adhere to and deposit on the surface of ceramic or the like due to excitation. Therefore, it is possible to prevent the surfaces of the electrodes 51 and 52 facing each other (the surfaces where the gaps 50f and 50r are formed) from being contaminated with a film or the like.
[0039]
Thereafter, the plasma-ized excitation gas is blown out from the front and rear outlets 25f and 25r, respectively. The source gas that has flowed over the substrate W is in contact with this plasma-ized excitation gas. As a result, a reaction of the raw material gas occurs to generate a reaction product p (FIG. 4), and the reaction product p hits the surface (upper surface) of the substrate W, thereby forming the desired film A uniformly. Can do. Thereafter, the excitation gas and the source gas flow toward the suction port 10a in a laminar flow that overlaps vertically. At this time, the excitation gas adheres to the nozzle plate 25 and the lower frame 24, that is, the lower surface (tip surface) of the nozzle tip constituent member 21A and prevents the reaction product p in the raw material gas from being touched. It is possible to prevent or suppress the 21A from being contaminated with a film or the like. This can greatly reduce the frequency of maintenance.
[0040]
Further, the excitation gas and the source gas are sucked from the suction port 10a of the outer casing 10 by the drive of the vacuum pump 14 and discharged. By adjusting the suction pressure of the vacuum pump 14 and the like, the above laminar flow state can be more reliably maintained, and the coating on the nozzle tip constituting member 21A can be reliably prevented.
[0041]
Even if dirt such as a film adheres to the nozzle tip constituent member 21A, when the nozzle head 20 is pulled up and out of the outer casing 10, only the nozzle tip constituent member 21A is attached to the outer casing 10 as shown in FIG. It is left behind in a state of being hooked on the inner flanges 11d and 12d. Thereby, the nozzle tip constituent member 21A can be removed very easily. Then, the nozzle tip constituting member 21A, that is, only the lower frame 24 and the nozzle plate 25 can be easily removed by soaking them in a chemical solution such as a strong acid. It is not necessary to take the entire nozzle head 20 to the cleaning process, and maintenance can be facilitated. On the other hand, if the spare nozzle tip constituent member 21A is attached to the nozzle head 20, the film forming process can be continued without interruption even during the above maintenance.
[0042]
Next, another embodiment of the present invention will be described. In the following embodiments, the same reference numerals are given to the drawings for the same configurations as those of the above-described embodiments, and the description is simplified.
FIG. 9 shows a second embodiment of the present invention. In this embodiment, the nozzle tip constituting member 21 </ b> A and the electrode 51 of the head main body cooperate to constitute a part of the “processing gas passage”.
More specifically, the nozzle plate 25 of the plasma film forming apparatus M2 according to the second embodiment is provided with only one outlet 25m at the center. On the upper surface of the nozzle plate 25, a recess 25 b is further provided in the central portion of the recess 25 a for the electrode unit 50. As a result, the gaps 20 f and 20 r as the “part of the processing gas passage” are formed between the lower surfaces of the two central electrodes 51 and the nozzle plate 25. The gap 20 f is continuous with the gap 50 f between the front electrodes 52 and 51 and is also continuous with the gap 50 m between the two central electrodes 51. The gap 20r is continuous with the gap 50r between the rear electrodes 51 and 52, and is also connected with the gap 50m between the two central electrodes 51.
[0043]
The excitation gas converted into plasma in the gaps 50f and 50r passes through the gaps 20f and 20r, and is blown out from the blowout port 25f while joining with the raw material gas from the central gap 50m and causing a reaction. At this time, since the excitation gas is interposed between the source gas and the edge of the outlet 25m, it is possible to prevent or suppress the formation of a film on the edge of the outlet 25m.
[0044]
The present invention is not limited to the above embodiment, and various modifications can be made.
For example, the lower frame 24 may be coupled to the wall members 22 and 23 via a simple attachment / detachment mechanism such as a bolt or a hook.
The positioning concave portion may be provided in the head main body, and the positioning convex portion may be provided in the support means. The reaction of the processing gas may take place before blowing out from the blowing outlet or after blowing out.
The present invention can be widely applied to a surface treatment apparatus for the purpose of surface treatment other than film formation (CVD) such as etching and surface modification. It can be applied without distinguishing between normal pressure environment and reduced pressure environment. As long as a processing gas that causes a chemical reaction for the surface treatment is blown from the nozzle head to the object to be processed, the present invention can be applied not only to the plasma surface processing apparatus but also to a thermal CVD apparatus.
The nozzle tip constituting member 21A may be covered on the head body such that the tip of the head body faces upward and the electrode unit receiving portion 25a is fitted into the power supply unit 50 of the head body. In that case, of course, the suction port 10a of the outer casing 10 is also directed upward. The nozzle head 20 may be fixed to the outer casing 10 with a simple attachment / detachment mechanism such as a bolt or a hook.
[0045]
【The invention's effect】
As described above, according to the present invention, even if dirt is attached around the outlet, the nozzle tip constituent member is easily removed from the head body, and only the nozzle tip constituent member is immersed in a chemical solution such as strong acid. It is not necessary to bring the entire nozzle head to the cleaning process, and maintenance can be facilitated. Further, if a spare nozzle tip component member is prepared and attached to the tip of the head body, the surface treatment can be performed without interruption even during maintenance.
[Brief description of the drawings]
FIG. 1 is a schematic view of a plasma film forming apparatus according to a first embodiment of the present invention.
FIG. 2 is a side sectional view of a gas homogenizing portion of a nozzle head of the plasma film forming apparatus.
FIG. 3 is a front cross-sectional view along the longitudinal direction of the gas homogenizer.
FIG. 4 is a side sectional view of an electrode portion of the nozzle head.
5 is a front sectional view of the electrode portion of the nozzle head taken along line VV in FIG.
6 is a cross-sectional plan view of the electrode portion taken along line VI-VI in FIG. 5;
FIG. 7 is a bottom view of the nozzle head.
FIG. 8 is a side sectional view showing a state in which the head body of the nozzle head and the nozzle tip constituent member are separated during maintenance of the plasma film forming apparatus.
FIG. 9 is a side sectional view of an electrode part of a nozzle head in a plasma film forming apparatus according to a second embodiment of the present invention.
[Explanation of symbols]
M1, M2 Plasma deposition equipment (plasma surface treatment equipment)
W base material (object to be treated)
1, 2 Process gas source 4 Pulse power supply (electric field applying means)
10 Outer casing (support means, exhaust duct)
10a Suction port 11d, 12d Inner flange (鍔)
12b Positioning recess 20 Nozzle head 20f, 20r Clearance (processing gas passage)
21A Nozzle tip constituent member 23a Positioning convex portion
24 Lower frame
25 Nozzle plates 25f, 25m, 25r Outlet 30a Gas homogenization path (processing gas path)
51, 52 Electrode 50f, 50m, 50r Gap (Processing gas passage)

Claims (5)

A plasma surface treatment apparatus that converts a treatment gas into plasma and sprays it on the object to be treated, and performs surface treatment of the object to be treated,
A head main body having a parallel plate type electrode at the bottom in a horizontal direction, forming a discharge space by the electrode, and converting the processing gas into plasma in the discharge space, a nozzle tip constituent member, and supporting means A horizontal nozzle plate , wherein the nozzle tip component member has a slit-shaped blowout opening connected to the discharge space, covers the lower surface of the head body, and detachably mounts and supports the head body And a lower frame on the periphery of the nozzle plate, and the support means detachably supports the lower frame of the nozzle tip constituent member so that the nozzle tip constituent member is separated from the object to be processed. A plasma surface treatment apparatus . The support means has a frame shape surrounding the nozzle tip constituent member, a flange protruding inward is formed at the periphery, and a step that is hooked by the flange is formed in the lower frame. The plasma surface treatment apparatus according to claim 1.   3. The plasma surface treatment apparatus according to claim 1, wherein the supporting means is an exhaust duct having a suction port that opens downward and surrounding the head body and the nozzle tip constituent member.   4. The plasma surface treatment apparatus according to claim 3, wherein the ridge is formed on an inner peripheral edge of a lower end portion of the exhaust duct.   Positioning convex portions are provided on one of the longitudinal ends of the head body and locations corresponding to the both ends of the support means, and positioning concave portions that are vertically fitted to the positioning convex portions are provided on the other side. The positioning convex portion and the positioning concave portion each have a triangular shape having a corner at a central portion in the width direction perpendicular to the longitudinal direction and slopes on both sides of the corner. The plasma surface treatment apparatus according to any one of 1 to 4.

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