TWI440085B - Plasma processing device - Google Patents

Plasma processing device Download PDF

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TWI440085B
TWI440085B TW100110643A TW100110643A TWI440085B TW I440085 B TWI440085 B TW I440085B TW 100110643 A TW100110643 A TW 100110643A TW 100110643 A TW100110643 A TW 100110643A TW I440085 B TWI440085 B TW I440085B
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gas
electrode
electrodes
nozzle
path
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TW201214555A (en
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Satoshi Mayumi
Susumu Yashiro
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Sekisui Chemical Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065Plasma etching; Reactive-ion etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32091Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32532Electrodes

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)

Description

電漿處理裝置Plasma processing device

本發明係關於一種使處理氣體通過接近大氣壓之放電空間並電漿化之後,與配置於放電空間之外部之被處理物接觸,從而對被處理物進行表面處理之裝置,尤其係關於一種排列有3個以上之形成上述放電空間之電極之電漿處理裝置。The present invention relates to a device for surface treatment of a workpiece after it is passed through a discharge space close to atmospheric pressure and plasmad, and then disposed on the object to be treated outside the discharge space, in particular, Three or more plasma processing apparatuses that form electrodes of the above discharge space.

公知有排列3個以上之電極之大氣壓電漿處理裝置(參照專利文獻1等)。相鄰接之電極彼此之對向面(放電生成面)由固體介電質而覆蓋。作為固體介電質,例如可使用氧化鋁等之陶瓷板(介電構件)。於覆蓋相鄰電極之對向面之陶瓷板彼此間形成有狹縫狀之通路。藉由對電極間施加電場,而於電極間在接近大氣壓下生成放電,且上述狹縫狀之空間成為放電空間。將處理氣體導入至放電空間並使其電漿化。使電漿化後之處理氣體自放電空間導出且噴出至被處理物。藉此,對被處理物進行表面處理。An atmospheric piezoelectric slurry processing apparatus in which three or more electrodes are arranged is known (see Patent Document 1, etc.). The opposite faces (discharge generating faces) of the adjacent electrodes are covered by a solid dielectric. As the solid dielectric material, for example, a ceramic plate (dielectric member) such as alumina can be used. A ceramic plate having a facing surface facing the adjacent electrode is formed with a slit-like passage therebetween. By applying an electric field between the electrodes, a discharge is generated between the electrodes at a pressure close to atmospheric pressure, and the slit-shaped space becomes a discharge space. The process gas is introduced into the discharge space and plasmad. The plasma gas after the plasma treatment is led out from the discharge space and ejected to the object to be treated. Thereby, the object to be treated is subjected to surface treatment.

[先前技術文獻][Previous Technical Literature] [專利文獻][Patent Literature]

[專利文獻1]日本專利特開2005-333096號公報[Patent Document 1] Japanese Patent Laid-Open Publication No. 2005-333096

於由大氣壓電漿處理裝置之電極之放電生成面之周緣與陶瓷板而形成之角落部容易產生沿面放電。若於上述角落部存在空氣等環境氣體,則因沿面放電而生成臭氧等腐蝕性成分。上述環境氣體因電極之熱量而高溫化且形成對流。上述腐蝕性成分亦可與該環境氣體一起形成對流且遠離電極,而向周邊擴散。然而,於電極排列有3個以上之情形時,於內側電極之下側之角落部所產生之腐蝕性成分因高溫化而與電極之下端面接觸且形成對流。因此,上述內側電極之下端部容易腐蝕。A creeping discharge is likely to occur at a corner portion formed by the periphery of the discharge generating surface of the electrode of the atmospheric piezoelectric slurry processing apparatus and the ceramic plate. When an ambient gas such as air is present in the corner portion, a corrosive component such as ozone is generated by creeping discharge. The ambient gas is heated by the heat of the electrode and forms convection. The corrosive component may also form a convection with the ambient gas and away from the electrode to diffuse toward the periphery. However, when there are three or more electrode arrangements, the corrosive component generated at the corner portion on the lower side of the inner electrode comes into contact with the lower end surface of the electrode and forms convection due to the high temperature. Therefore, the lower end portion of the above inner electrode is easily corroded.

本發明係為解決上述問題點開發而成者,其係使處理氣體通過接近大氣壓之放電空間,且與配置於上述放電空間之外部之被處理物接觸之電漿處理裝置,其特徵在於包括:3個以上之電極,各自形成具有下端面及與上述下端面交叉之放電生成面之板狀,且以相鄰者彼此之上述放電生成面相對向之方式而排列於與上述放電生成面交叉之並列方向上;介電構件,其覆蓋上述各放電生成面,且包含劃分上述放電空間之板狀之固體介電質;以及滌洗噴嘴,其係將滌洗氣體以沿著上述3個以上之電極中配置於內側之電極之下端面流動之方式而噴出。The present invention has been developed to solve the above problems, and is a plasma processing apparatus that allows a processing gas to pass through a discharge space close to atmospheric pressure and is in contact with an object to be processed disposed outside the discharge space, and is characterized by comprising: Each of the three or more electrodes is formed in a plate shape having a lower end surface and a discharge generating surface that intersects the lower end surface, and is arranged to intersect the discharge generating surface so that the discharge generating surfaces of the adjacent ones face each other. a dielectric member covering the respective discharge generating surfaces and including a plate-shaped solid dielectric material dividing the discharge space; and a scrubbing nozzle for rinsing the scrubbing gas along the three or more The electrode is disposed in such a manner that the lower end surface of the electrode disposed on the inner side flows.

根據上述構成,即便於由上述內側電極之下端面與介電構件而形成之角落部生成起因於沿面放電之腐蝕性成分,亦可藉由滌洗氣體而將該腐蝕性成分自上述內側電極之下端面之周邊去除(滌洗)。由此,可防止上述內側電極之下端部腐蝕。According to the above configuration, even if a corrosive component due to the creeping discharge is generated in a corner portion formed by the lower end surface of the inner electrode and the dielectric member, the corrosive component can be removed from the inner electrode by the scrubbing gas. The periphery of the lower end face is removed (washed). Thereby, corrosion of the lower end portion of the inner electrode can be prevented.

較佳為,上述滌洗噴嘴配置於上述內側電極之下端面之與上述並列方向正交(或交叉)的長度方向之一端側。Preferably, the rinsing nozzle is disposed on one end side in the longitudinal direction orthogonal to (or intersecting with) the end surface of the inner electrode.

自上述滌洗噴嘴噴出之滌洗氣體沿著上述內側電極之下端面之長度方向自一端側向另一端側流動。藉此,可確實地自上述內側電極之大致整個下端面之周邊去除起因於沿面放電之腐蝕性成分。The scrubbing gas ejected from the washing nozzle flows from one end side to the other end side along the longitudinal direction of the lower end surface of the inner electrode. Thereby, the corrosive component caused by the creeping discharge can be surely removed from the periphery of substantially the entire lower end surface of the inner electrode.

於上述3個以上之電極之下方,隔著間隙以橫跨該等電極之方式而設置有氣體導出部,上述介電構件自上述電極向下突出且與上述氣體導出部相連結,於上述氣體導出部之內部亦可形成與上述放電空間連接之氣體導出路徑。上述滌洗噴嘴係以面向上述內側電極與上述氣體導出部之間的間隙(以下稱為「內側間隙」)之與上述並列方向正交(或交叉)之長度方向之一端側之開口的方式而配置,上述內側間隙之上述長度方向之另一端側之開口亦可打開。A gas lead-out portion is provided below the three or more electrodes so as to straddle the electrodes via a gap, and the dielectric member protrudes downward from the electrode and is connected to the gas lead-out portion. A gas export path connected to the discharge space may be formed inside the lead-out portion. The washing nozzle is configured such that a gap (hereinafter referred to as an "inner gap") between the inner electrode and the gas lead-out portion faces an opening on one end side in the longitudinal direction orthogonal to (or intersects with) the parallel direction. In the arrangement, the opening on the other end side in the longitudinal direction of the inner gap may be opened.

於由上述電極之下端面與上述介電構件之向上述下方之突出部分而形成之角落部容易產生沿面放電。若產生沿面放電,則上述間隙內之環境氣體中之氧氣臭氧化等,而於上述間隙內生成腐蝕性成分。因此,自上述滌洗噴嘴將滌洗氣體噴出至上述內側間隙內。滌洗氣體沿著上述內側間隙之長度方向自一端側流向另一端側,且自另一端側之開口流出。藉此,可將內側間隙內之氣體置換成滌洗氣體。由此,即便於上述角落部產生沿面放電,亦可抑制或防止生成腐蝕性成分。即便於上述內側間隙內生成腐蝕性成分,亦可將該腐蝕性成分與滌洗氣體一起自內側間隙去除。其結果,可防止上述內側電極之下端部腐蝕。A creeping discharge is likely to occur at a corner portion formed by the lower end surface of the electrode and the protruding portion of the dielectric member toward the lower portion. When a creeping discharge occurs, oxygen in the ambient gas in the gap is ozonated, and a corrosive component is generated in the gap. Therefore, the scrubbing gas is ejected from the above-mentioned washing nozzle into the inner gap. The scrubbing gas flows from one end side to the other end side along the longitudinal direction of the inner side gap, and flows out from the opening of the other end side. Thereby, the gas in the inner gap can be replaced with a scrubbing gas. Thereby, even if the creeping discharge occurs in the corner portion, the formation of corrosive components can be suppressed or prevented. That is, it is convenient to generate a corrosive component in the inner gap, and the corrosive component may be removed from the inner gap together with the scrubbing gas. As a result, corrosion of the lower end portion of the inner electrode can be prevented.

本發明適合於在接近大氣壓之壓力下生成電漿且進行表面處理之電漿表面處理裝置。此處,所謂接近大氣壓係指1.013×104 ~50.663×104 Pa之範圍,若考慮壓力調整之容易化或裝置構成之簡便化,則較佳為1.333×104 ~10.664×104 Pa,更佳為9.331×104 ~10.397×104 Pa。The present invention is suitable for a plasma surface treatment apparatus which generates plasma at a pressure close to atmospheric pressure and performs surface treatment. Here, the term "atmospheric pressure" means a range of 1.013 × 10 4 to 50.663 × 10 4 Pa, and in consideration of ease of pressure adjustment or simplification of the device configuration, it is preferably 1.333 × 10 4 to 10.664 × 10 4 Pa. More preferably, it is 9.331 × 10 4 ~ 10.397 × 10 4 Pa.

根據本發明,即便於排列3個以上之電極中之內側電極之下端面與介電構件之角落部因沿面放電而產生腐蝕性成分,亦可藉由滌洗氣體將該腐蝕性成分自電極之下端面之周邊去除。因此,可防止內側電極之下端部腐蝕。According to the present invention, even if the lower end surface of the inner electrode and the corner portion of the dielectric member in the three or more electrodes are corroded by the creeping discharge, the corrosive component can be self-electrode by the scrubbing gas. The periphery of the lower end face is removed. Therefore, corrosion of the lower end portion of the inner electrode can be prevented.

以下,根據圖式對本發明之一實施形態進行說明。Hereinafter, an embodiment of the present invention will be described based on the drawings.

本實施形態之被處理物例如係平板顯示器用之玻璃基板,但本發明並不限定於此,可適用於半導體晶圓、樹脂膜等各種被處理物。The object to be processed of the present embodiment is, for example, a glass substrate for a flat panel display. However, the present invention is not limited thereto, and can be applied to various objects to be processed such as a semiconductor wafer or a resin film.

處理內容例如係非晶矽等含有矽之膜之蝕刻,但本發明並不限定於此,可適用於灰化、清洗、表面改質(防水化、親水化等)、成膜等各種處理。The processing content is, for example, etching of a film containing germanium such as amorphous germanium. However, the present invention is not limited thereto, and can be applied to various processes such as ashing, cleaning, surface modification (waterproofing, hydrophilization, etc.), and film formation.

如圖1所示,電漿處理裝置1具備處理氣體源2、電漿生成部3、及處理氣體噴嘴5。As shown in FIG. 1 , the plasma processing apparatus 1 includes a processing gas source 2, a plasma generating unit 3, and a processing gas nozzle 5.

處理氣體源2係將電漿化前之處理氣體之各成分以適當之流量比混合,且將混合之氣體向電漿生成部3輸送。處理氣體成分根據處理內容適當選擇。例如,於含有矽之膜之蝕刻的情形時,處理氣體含有CF4 等氟系成分。氟系成分亦可藉由Ar等稀釋氣體稀釋。進而,亦可於處理氣體中添加H2 O。H2 O可藉由加濕器添加。The processing gas source 2 mixes the components of the processing gas before the plasma formation at an appropriate flow ratio, and supplies the mixed gas to the plasma generating unit 3. The processing gas component is appropriately selected depending on the processing content. For example, in the case of etching containing a film of ruthenium, the process gas contains a fluorine-based component such as CF 4 . The fluorine-based component can also be diluted by a diluent gas such as Ar. Further, H 2 O may be added to the processing gas. H 2 O can be added by a humidifier.

作為氟系成分,亦可使用其他PFC(Perflourodecalin,全氟碳)或HFC(Hydrofluorocarbon,氫氟碳)等含氟物質代替CF4 。作為稀釋氣體,亦可使用N2 、He等其他惰性氣體代替Ar。作為添加成分,亦可使用醇或H2 O2 代替H2 O。As the fluorine-based component, a fluorine-containing substance such as other PFC (Perfluorocarbon) or HFC (Hydrofluorocarbon) may be used instead of CF 4 . As the diluent gas, other inert gases such as N 2 and He may be used instead of Ar. As an additive component, alcohol or H 2 O 2 may be used instead of H 2 O.

於含有矽之膜之蝕刻中,電漿化前之處理氣體除含有CF4 等含氟物質以外,亦可含有O2 、N2 ,且不含有H2 O。In the etching of the film containing ruthenium, the processing gas before the plasma treatment may contain O 2 , N 2 and does not contain H 2 O in addition to the fluorine-containing substance such as CF 4 .

處理氣體供給路徑2a自處理氣體源2延伸。該供給路徑2a與電漿生成部3相連接。電漿生成部3包括外罩10及電極單元20。於外罩10之頂板11上形成有氣體導入路徑12。頂板11構成氣體導入部。供給路徑2a與氣體導入路徑12連接。氣體導入路徑12成為使來自供給路徑2a之氣體於下述複數條狹縫狀通路34之長度方向(圖2之左右)及並列方向(圖3之左右)上分散之分散路徑構造(參照圖2及圖3)。The process gas supply path 2a extends from the process gas source 2. This supply path 2a is connected to the plasma generating unit 3. The plasma generating unit 3 includes a cover 10 and an electrode unit 20. A gas introduction path 12 is formed in the top plate 11 of the outer cover 10. The top plate 11 constitutes a gas introduction portion. The supply path 2a is connected to the gas introduction path 12. The gas introduction path 12 is a dispersion path structure in which the gas from the supply path 2a is dispersed in the longitudinal direction (left and right in FIG. 2) and the parallel direction (left and right in FIG. 3) of the plurality of slit-shaped passages 34 described below (see FIG. 2). And Figure 3).

排氣路徑19自外罩10之側部延伸。排氣路徑19與排氣泵等排氣裝置(省略圖示)連接。藉由排氣裝置可將外罩10內之氣體自排氣路徑19抽出並排出。或者,可更換外罩10內之氣體。The exhaust path 19 extends from the side of the outer cover 10. The exhaust path 19 is connected to an exhaust device (not shown) such as an exhaust pump. The gas in the outer casing 10 can be extracted and discharged from the exhaust path 19 by the exhaust device. Alternatively, the gas in the outer cover 10 can be replaced.

於外罩10之內部收容有電極單元20。於電極單元20之內部形成有接近大氣壓之放電空間35。氣體導入路徑12與放電空間35之上端部相連接。處理氣體源2之處理氣體依序經由供給路徑2a及氣體導入路徑12而導入至放電空間35並使其電漿化。藉此,賦予處理氣體反應性。例如,於電漿化前之處理氣體含有CF4 、Ar、H2 O之情形時,藉由電漿化而生成HF、COF2 等反應成分。於電漿化前之處理氣體含有CF4 、O2 、N2 且不含有H2 O之情形時,生成COF2 、OF2 、O2 F2 、NOx 等反應成分。The electrode unit 20 is housed inside the outer cover 10. A discharge space 35 close to atmospheric pressure is formed inside the electrode unit 20. The gas introduction path 12 is connected to the upper end of the discharge space 35. The processing gas of the processing gas source 2 is introduced into the discharge space 35 through the supply path 2a and the gas introduction path 12 in order, and is plasma-plasmaized. Thereby, the reaction gas reactivity is imparted. For example, when the processing gas before the plasma formation contains CF 4 , Ar or H 2 O, a reaction component such as HF or COF 2 is produced by plasma formation. When the processing before the plasma gas containing CF 4, O 2, N 2 H 2 O and does not include the case, to generate COF 2, OF reactive components 2, O 2 F 2, NO x and the like.

以下對電極單元20之構造進行詳細敍述。The structure of the electrode unit 20 will be described in detail below.

於電極單元20之下方設置有氣體導出部40。於氣體導出部40之內部形成有氣體導出路徑41。放電空間35之下端部與導出路徑41相連接。導出路徑41成為使來自放電空間35之氣體合流之合流路徑構造(參照圖2及圖3)。連接路徑4自導出路徑41延伸。連接路徑4與處理氣體噴嘴5相連接。A gas outlet portion 40 is provided below the electrode unit 20. A gas lead-out path 41 is formed inside the gas lead-out portion 40. The lower end of the discharge space 35 is connected to the lead-out path 41. The lead-out path 41 is a merging path structure for merging the gas from the discharge space 35 (see FIGS. 2 and 3). The connection path 4 extends from the export path 41. The connection path 4 is connected to the process gas nozzle 5.

處理氣體噴嘴5係以與被處理物9相對向之方式而配置。於處理氣體噴嘴5之朝向被處理物9之面(例如底面)上形成有噴口5a。噴口5a可由沿著與下述搬送方向正交之一方向分散配置之複數個小孔而構成,亦可成為沿著上述一方向延伸之狹縫狀。The processing gas nozzle 5 is disposed so as to face the workpiece 9 . A nozzle 5a is formed in a surface (for example, a bottom surface) of the processing gas nozzle 5 facing the workpiece 9. The spout 5a may be formed by a plurality of small holes which are disposed to be dispersed in one direction orthogonal to the transport direction described below, and may have a slit shape extending in the one direction.

被處理物9藉由支持部6而支持。支持部6例如由滾筒輸送機、輥式輸送機、移動平台、機械致動器等而構成。支持部6兼作將被處理物9沿著搬送方向搬送之搬送機構。The workpiece 9 is supported by the support unit 6. The support unit 6 is constituted by, for example, a roller conveyor, a roller conveyor, a moving platform, a mechanical actuator, or the like. The support unit 6 also serves as a transport mechanism that transports the workpiece 9 in the transport direction.

亦可以將支持部6及被處理物9位置固定,使處理氣體噴嘴5沿著搬送方向移動之方式而構成。The support portion 6 and the workpiece 9 may be fixed in position to move the processing gas nozzle 5 in the transport direction.

將於放電空間35內進行電漿化之處理氣體依序經由導出路徑41、連接路徑4而輸送至處理氣體噴嘴5,且自噴口5a噴出。該處理氣體與被處理物9接觸。進而,亦可藉由臭氧產生器生成臭氧,與上述處理氣體混合,且使其與被處理物9接觸。藉此,被處理物9之表面產生非晶矽之蝕刻反應等,從而進行被處理物9之表面處理。The process gas that is plasma-formed in the discharge space 35 is sequentially transported to the process gas nozzle 5 via the lead-out path 41 and the connection path 4, and is ejected from the nozzle 5a. This processing gas is in contact with the workpiece 9. Further, ozone may be generated by an ozone generator, mixed with the processing gas, and brought into contact with the workpiece 9. Thereby, an etching reaction or the like of an amorphous germanium is generated on the surface of the workpiece 9, and the surface treatment of the workpiece 9 is performed.

上述臭氧亦可自蓄積有臭氧之臭氧罐供給而代替臭氧產生器。The ozone may be supplied from an ozone tank in which ozone is accumulated instead of the ozone generator.

以下對電極單元20進行詳細敍述。The electrode unit 20 will be described in detail below.

如圖3所示,電極單元20包括3個以上之電極21。本實施形態之電極單元20包括5個電極21。該等電極21係由鋁等金屬而構成。如圖2及圖3所示,各電極21成為水平朝向長度方向及厚度方向、上下(垂直)朝向短邊方向之四角形之板形狀。各電極21具有上下之端面及長度方向之兩端面、以及與該等端面交叉之放電生成面27。As shown in FIG. 3, the electrode unit 20 includes three or more electrodes 21. The electrode unit 20 of the present embodiment includes five electrodes 21. The electrodes 21 are made of a metal such as aluminum. As shown in FIGS. 2 and 3, each of the electrodes 21 has a square shape in which the horizontal direction is the horizontal direction and the thickness direction, and the upper and lower sides (vertical directions) face the short side direction. Each of the electrodes 21 has an upper end surface and both end faces in the longitudinal direction, and a discharge generating surface 27 that intersects the end faces.

如圖2及圖3所示,於各電極21之內部形成有溫度調節路徑28。經溫度調節之水等介質流通至溫度調節路徑28。藉此,可對電極21進行溫度調節。具體而言,可去除由電極21放電時所產生之熱量。如圖2所示,於各電極21之下端面及長度方向之兩端面,設置有堵塞上述溫度調節路徑28用之加工孔之金屬製插塞29。As shown in FIGS. 2 and 3, a temperature adjustment path 28 is formed inside each electrode 21. A medium such as temperature-adjusted water flows to the temperature adjustment path 28. Thereby, the temperature adjustment of the electrode 21 can be performed. Specifically, the amount of heat generated when the electrode 21 is discharged can be removed. As shown in FIG. 2, metal plugs 29 for clogging the processing holes for the temperature adjustment path 28 are provided on both end faces of the lower end surface and the longitudinal direction of each electrode 21.

3個以上(此處為5個)之電極21相互平行地排列於並列方向(各電極21之厚度方向)上。於將該等電極21相互區別時,自圖3中之左側者依序對符號21附加A、B、C、D、E。電性接地之接地電極21A、21C、21E與連接於電源(未圖示)之熱電極21B、21D交替配置。省略供電構造及接地構造之圖示。於並列方向之最外側配置有接地電極21A、21E。上述電源將例如脈衝波狀之高頻電力供給至電極單元20。藉此,對相鄰2個電極21、21彼此之間施加電場,於接近大氣壓下生成電漿放電。如圖3及圖4所示,與各電極21A~21E中之相鄰電極21相對向之面構成放電生成面27。放電生成面27與電極21彼此之並列方向正交。相鄰2個電極21、21之放電生成面27、27彼此相對向。Three or more (here, five) electrodes 21 are arranged in parallel with each other in the parallel direction (the thickness direction of each electrode 21). When the electrodes 21 are distinguished from each other, A, B, C, D, and E are sequentially added to the symbols 21 from the left side in FIG. The ground electrodes 21A, 21C, and 21E that are electrically grounded are alternately arranged with the hot electrodes 21B and 21D connected to a power source (not shown). The illustration of the power supply structure and the ground structure is omitted. Ground electrodes 21A and 21E are disposed on the outermost side in the parallel direction. The above-described power source supplies, for example, pulse wave-shaped high-frequency power to the electrode unit 20. Thereby, an electric field is applied to the adjacent two electrodes 21 and 21, and a plasma discharge is generated at a pressure close to atmospheric pressure. As shown in FIGS. 3 and 4, the discharge generating surface 27 is formed on a surface facing the adjacent electrode 21 of each of the electrodes 21A to 21E. The discharge generating surface 27 and the electrode 21 are orthogonal to each other in the direction in which they are arranged. The discharge generating faces 27 and 27 of the adjacent two electrodes 21 and 21 face each other.

如圖3及圖4所示,於各電極21之放電生成面27上設置有介電構件30。介電構件30係由氧化鋁等之陶瓷而構成。介電構件30成為水平朝向長度方向及厚度方向、上下(垂直)朝向短邊方向之四角形之板形狀。介電構件30具有較放電生成面27更大之面積,且完全覆蓋所對應之電極之放電生成面27。如圖3所示,介電構件30之上端部自電極21向上突出。於介電構件30之上端部形成有上凸緣31。介電構件30之下端部自電極21向下突出。藉由各電極21之下端面與介電構件30朝向下方之突出部分而形成有角落部15。於介電構件30之下端部形成有下凸緣32。介電構件30之長度方向之兩端部較電極21之相同側之端部更向長度方向之外側突出。As shown in FIGS. 3 and 4, a dielectric member 30 is provided on the discharge generating surface 27 of each electrode 21. The dielectric member 30 is made of a ceramic such as alumina. The dielectric member 30 has a square shape in which a horizontal direction faces the longitudinal direction and the thickness direction, and the upper and lower sides (vertical directions) face the short side direction. The dielectric member 30 has a larger area than the discharge generating surface 27 and completely covers the discharge generating surface 27 of the corresponding electrode. As shown in FIG. 3, the upper end portion of the dielectric member 30 protrudes upward from the electrode 21. An upper flange 31 is formed at an upper end portion of the dielectric member 30. The lower end portion of the dielectric member 30 protrudes downward from the electrode 21. A corner portion 15 is formed by a lower end surface of each electrode 21 and a protruding portion of the dielectric member 30 facing downward. A lower flange 32 is formed at a lower end portion of the dielectric member 30. Both end portions of the dielectric member 30 in the longitudinal direction protrude more toward the outer side in the longitudinal direction than the end portions on the same side of the electrode 21.

如圖3所示,於配置於相鄰2個電極之相互相對向之放電生成面27、27之介電構件30、30彼此間形成有狹縫狀之通路34。電極單元20整體具有4條狹縫狀通路34。各狹縫狀通路34中電極間所對應之部分(除較電極更突出之部分以外之內側部分)構成上述放電空間35。As shown in FIG. 3, a slit-like via 34 is formed between the dielectric members 30 and 30 disposed adjacent to the discharge generating surfaces 27 and 27 of the adjacent two electrodes. The electrode unit 20 has four slit-like passages 34 as a whole. The portion corresponding to the electrode (the inner portion excluding the portion where the electrode is more protruded) in each of the slit-like passages 34 constitutes the discharge space 35 described above.

如圖4所示,於該等2個介電構件30、30中之一個介電構件30之長度方向之兩端部(圖4中僅圖示單側)形成有密封部33。密封部33沿著上下(圖4中與紙面正交之方向)延伸,並且向另一個介電構件30之側突出,且碰觸到該另一個介電構件30。藉由密封部33堵塞狹縫狀通路34進而堵塞放電空間35之長度方向之兩端部。As shown in FIG. 4, a sealing portion 33 is formed at both end portions (only one side is illustrated in FIG. 4) of the dielectric members 30 of the two dielectric members 30 and 30 in the longitudinal direction. The sealing portion 33 extends up and down (the direction orthogonal to the plane of the drawing in FIG. 4) and protrudes toward the side of the other dielectric member 30, and touches the other dielectric member 30. The slit portion 34 is blocked by the sealing portion 33 to block both end portions of the discharge space 35 in the longitudinal direction.

如圖2及圖3所示,外罩10之頂板11即氣體導入部11係以橫跨5個電極21間之方式而配置。氣體導入部11自電極21遠離上方。於各電極21之上端面與氣體導入部11之間形成有上側間隙13。各介電構件30之上端部自電極21向上突出,且與氣體導入部11相連結。相互抵接之介電構件30、30間之狹縫狀通路34之上端部與氣體導入路徑12相連接。As shown in FIGS. 2 and 3, the gas introduction portion 11 of the top plate 11 of the outer cover 10 is disposed so as to straddle between the five electrodes 21. The gas introduction portion 11 is away from the electrode 21 from above. An upper gap 13 is formed between the upper end surface of each electrode 21 and the gas introduction portion 11. The upper end portion of each dielectric member 30 protrudes upward from the electrode 21 and is coupled to the gas introduction portion 11. The upper end portion of the slit-like passage 34 between the dielectric members 30 and 30 that are in contact with each other is connected to the gas introduction path 12.

於上側間隙13內進入有外罩10之內部空間18(詳細而言,係外罩10之內壁與電極單元20之間的空間)之環境氣體。各電極21之上端面與間隙13內之環境氣體(空氣)接觸。藉由將氣體導入部11與各電極21稍微隔離,可抑制或防止於氣體導入部11之下表面產生沿面放電。The ambient gas of the inner space 18 of the outer cover 10 (in detail, the space between the inner wall of the outer cover 10 and the electrode unit 20) enters into the upper gap 13. The upper end surface of each electrode 21 is in contact with the ambient gas (air) in the gap 13. By slightly isolating the gas introduction portion 11 from the respective electrodes 21, creeping discharge can be suppressed or prevented from occurring on the lower surface of the gas introduction portion 11.

如圖2及圖3所示,電極單元20之下部之氣體導出部40係以橫跨5個電極21間之方式而配置。氣體導出部40自電極21遠離下方。各介電構件30之下端部自電極21向下突出,且與氣體導出部40相連結。相互抵接之介電構件30、30間之狹縫狀通路34進而放電空間35之下端部與氣體導出路徑41相連接。As shown in FIGS. 2 and 3, the gas lead-out portion 40 at the lower portion of the electrode unit 20 is disposed so as to straddle between the five electrodes 21. The gas discharge portion 40 is away from the electrode 21 from below. The lower end portion of each dielectric member 30 protrudes downward from the electrode 21 and is coupled to the gas discharge portion 40. The slit-like passages 34 between the mutually abutting dielectric members 30 and 30 and the lower end portions of the discharge spaces 35 are connected to the gas discharge path 41.

如圖2及圖3所示,於各電極21之下端面與氣體導出部40之間形成有下側間隙14。即,如圖3及圖4所示,於電極21A之下端面與氣體導出部40之間形成有間隙14A。於電極21B之下端面與氣體導出部40之間形成有間隙14B。於電極21C之下端面與氣體導出部40之間形成有間隙14C。於電極21D之下端面與氣體導出部40之間形成有間隙14D。於電極21E之下端面與氣體導出部40之間形成有間隙14E。藉由將氣體導出部40與各電極21稍微隔離,可抑制或防止於氣體導出部40之上表面產生沿面放電。As shown in FIGS. 2 and 3, a lower gap 14 is formed between the lower end surface of each electrode 21 and the gas discharge portion 40. That is, as shown in FIGS. 3 and 4, a gap 14A is formed between the lower end surface of the electrode 21A and the gas discharge portion 40. A gap 14B is formed between the lower end surface of the electrode 21B and the gas discharge portion 40. A gap 14C is formed between the lower end surface of the electrode 21C and the gas discharge portion 40. A gap 14D is formed between the lower end surface of the electrode 21D and the gas discharge portion 40. A gap 14E is formed between the lower end surface of the electrode 21E and the gas discharge portion 40. By slightly isolating the gas lead-out portion 40 from each of the electrodes 21, creeping discharge can be suppressed or prevented from occurring on the upper surface of the gas lead-out portion 40.

如圖3所示,兩端之間隙14A、14E之電極並列方向(圖3之左右)之外側之側部及電極長度方向(圖3之與紙面正交之方向)之兩端部打開,且與外罩內空間18相連接。兩端之間隙14A、14E之電極並列方向之內側之側部藉由介電構件30而堵塞。As shown in FIG. 3, the side portions on the outer side in the direction in which the electrodes of the gaps 14A and 14E at both ends are arranged in the parallel direction (left and right in FIG. 3) and the electrode longitudinal direction (the direction orthogonal to the plane of the paper in FIG. 3) are opened, and It is connected to the inner space 18 of the outer cover. The side portions on the inner side in the direction in which the electrodes of the gaps 14A and 14E at both ends are juxtaposed are blocked by the dielectric member 30.

如圖2及圖3所示,內側之間隙14B、14C、14D之長度方向之一端部(圖2之右側、圖3之紙面裏側)藉由下述之滌洗噴嘴70而堵塞。內側間隙14B、14C、14D之長度方向之另一端部(圖2之左側、圖3之紙面近前側)打開,且與外罩內空間18相連接。內側間隙14B、14C、14D之電極並列方向(圖3之左右)之兩側部藉由介電構件30而堵塞。As shown in FIGS. 2 and 3, one end portion of the inner side gaps 14B, 14C, and 14D in the longitudinal direction (the right side in FIG. 2 and the back side in the paper surface of FIG. 3) is closed by the following washing nozzle 70. The other end portion of the inner gaps 14B, 14C, and 14D in the longitudinal direction (the left side of FIG. 2 and the front side of the paper surface of FIG. 3) is opened and connected to the outer space 18 of the outer cover. Both side portions of the inner gaps 14B, 14C, and 14D in the side-by-side direction (left and right of FIG. 3) are blocked by the dielectric member 30.

當下述滌洗裝置7停止時,外罩10內之環境氣體進入至各間隙14內。各電極21之下端面與間隙14內之環境氣體接觸。如圖2所示,各電極21之長度方向之兩側之端面面向外罩內空間18,且與外罩內空間18之環境氣體接觸。When the scrubbing device 7 described below is stopped, the ambient gas in the outer casing 10 enters into the respective gaps 14. The lower end surface of each electrode 21 is in contact with the ambient gas in the gap 14. As shown in Fig. 2, the end faces on both sides in the longitudinal direction of each electrode 21 face the outer cover inner space 18 and are in contact with the ambient gas of the inner space 18 of the outer cover.

如圖1所示,電漿處理裝置1進而具備滌洗裝置7。滌洗裝置7包括滌洗氣體源7a、及滌洗噴嘴70。作為滌洗氣體源7a之滌洗氣體,可使用例如氮氣(N2 )。作為滌洗氣體,亦可使用空氣或氮氣以外之惰性氣體代替氮氣。自滌洗氣體源7a引出滌洗氣體供給路徑7b。供給路徑7b向電漿生成部3延伸。As shown in FIG. 1, the plasma processing apparatus 1 further includes a washing and washing apparatus 7. The scrubbing device 7 includes a scrubbing gas source 7a and a scrubbing nozzle 70. As the scrubbing gas of the scrubbing gas source 7a, for example, nitrogen (N 2 ) can be used. As the scrubbing gas, an inert gas other than air or nitrogen may be used instead of nitrogen. The scrubbing gas supply path 7b is taken out from the scrubbing gas source 7a. The supply path 7b extends toward the plasma generating unit 3.

如圖1及圖2所示,滌洗噴嘴70收容於電漿生成部3之內部。滌洗噴嘴70配置於電極單元20之長度方向之一端部之下側部分。As shown in FIGS. 1 and 2, the washing nozzle 70 is housed inside the plasma generating unit 3. The scrubbing nozzle 70 is disposed at a lower side portion of one end portion of the electrode unit 20 in the longitudinal direction.

如圖4及圖5所示,滌洗噴嘴70係由例如聚偏二氟乙烯(Polyvinylidene fluoride,PVDF)等耐氟系樹脂而構成,且整體成為一體。滌洗噴嘴70具備噴嘴本體71、3個噴嘴端73、及安裝部74。噴嘴本體71成為塊體形狀,且橫跨3個內側電極21B、21C、21D間。如圖2及圖4所示,噴嘴本體71之朝向電極單元20之面72與內側電極21B、21C、21D之長度方向之一端面之下側部分碰觸。As shown in FIG. 4 and FIG. 5, the washing nozzle 70 is made of, for example, a fluorine-resistant resin such as polyvinylidene fluoride (PVDF), and is integrated as a whole. The washing nozzle 70 includes a nozzle body 71, three nozzle ends 73, and a mounting portion 74. The nozzle body 71 has a block shape and spans between the three inner electrodes 21B, 21C, and 21D. As shown in FIGS. 2 and 4, the surface 72 of the nozzle body 71 facing the electrode unit 20 is in contact with the lower side portion of the one end surface of the inner electrodes 21B, 21C, and 21D in the longitudinal direction.

如圖3及圖5所示,於噴嘴本體71之上表面之電極21B、21D所對應之位置,分別以向上突出之方式而形成有安裝部74。如圖2所示,安裝部74螺釘固定於電極21B、21D上。藉此,滌洗噴嘴70固定於電極單元20。As shown in FIGS. 3 and 5, the mounting portion 74 is formed so as to protrude upward at positions corresponding to the electrodes 21B and 21D on the upper surface of the nozzle body 71. As shown in FIG. 2, the mounting portion 74 is screwed to the electrodes 21B, 21D. Thereby, the washing nozzle 70 is fixed to the electrode unit 20.

如圖5所示,於噴嘴本體71之朝向電極單元20之碰觸面72上形成有2個切口75。藉由2個切口75而將碰觸面72分割成3個面72b、72c、72d。如圖4所示,於各切口75中插入有相鄰接之電極21、21間的2個介電構件30、30之端部。As shown in FIG. 5, two slits 75 are formed in the contact surface 72 of the nozzle body 71 facing the electrode unit 20. The contact surface 72 is divided into three faces 72b, 72c, and 72d by two slits 75. As shown in FIG. 4, the end portions of the two dielectric members 30, 30 between the adjacent electrodes 21, 21 are inserted into the slits 75.

如圖2及圖5所示,於上述3個分割面72b、72c、72d上分別設置有噴嘴端73。各噴嘴端73成為水平且扁平之小片狀,且自噴嘴本體71向電極單元20之側突出。如圖2及圖3所示,噴嘴端73較電極21位於下方。該等噴嘴端73與內側間隙14B、14C、14D相對向。As shown in FIG. 2 and FIG. 5, the nozzle end 73 is provided in each of the three divided surfaces 72b, 72c, and 72d. Each of the nozzle ends 73 has a flat and flat plate shape and protrudes from the nozzle body 71 toward the side of the electrode unit 20. As shown in FIGS. 2 and 3, the nozzle end 73 is located below the electrode 21. The nozzle ends 73 are opposed to the inner gaps 14B, 14C, and 14D.

如圖3及圖4所示,3個噴嘴端73與內側電極21B、21C、21D一對一地對應。以下,於將3個噴嘴端73相互區別時,對符號73附加與相對應之電極21相同之附標B~D。如圖2及圖3所示,對應於電極21B之噴嘴端73B自碰觸面72b突出,且插入至間隙14B。對應於電極21C之噴嘴端73C自碰觸面72c突出,且插入至間隙14C。對應於電極21D之噴嘴端73D自碰觸面72d突出,且插入至間隙14D。As shown in FIGS. 3 and 4, the three nozzle ends 73 correspond to the inner electrodes 21B, 21C, and 21D one-to-one. Hereinafter, when the three nozzle ends 73 are distinguished from each other, the same symbol B to D as the corresponding electrode 21 is added to the symbol 73. As shown in FIGS. 2 and 3, the nozzle end 73B corresponding to the electrode 21B protrudes from the contact surface 72b and is inserted into the gap 14B. The nozzle end 73C corresponding to the electrode 21C protrudes from the contact surface 72c and is inserted into the gap 14C. The nozzle end 73D corresponding to the electrode 21D protrudes from the contact surface 72d and is inserted into the gap 14D.

於滌洗噴嘴70之一側部設置有滌洗氣體出口76。於出口76連接供給路徑7b之前端。於噴嘴70之內部形成有自出口76延伸之滌洗氣體引導路徑77。自引導路徑77分支出3個滌洗氣體噴出路徑78。該等噴出路徑78與3個噴嘴端73B、73C、73D一對一地對應。對應於噴嘴端73B之噴出路徑78B通過噴嘴端73B之內部,到達噴嘴端73B之前端面且開口。對應於噴嘴端73C之噴出路徑78C通過噴嘴端73C之內部,到達噴嘴端73C之前端面且開口。對應於噴嘴端73D之噴出路徑78D通過噴嘴端73D之內部,到達噴嘴端73D之前端面且開口。A scrubbing gas outlet 76 is provided at one side of the scrubbing nozzle 70. The outlet 76 is connected to the front end of the supply path 7b. A purge gas guiding path 77 extending from the outlet 76 is formed inside the nozzle 70. Three washing gas discharge paths 78 are branched from the guiding path 77. These discharge paths 78 correspond to the three nozzle ends 73B, 73C, and 73D one-to-one. The discharge path 78B corresponding to the nozzle end 73B passes through the inside of the nozzle end 73B, reaches the front end surface of the nozzle end 73B, and is opened. The discharge path 78C corresponding to the nozzle end 73C passes through the inside of the nozzle end 73C, reaches the front end surface of the nozzle end 73C, and is opened. The discharge path 78D corresponding to the nozzle end 73D passes through the inside of the nozzle end 73D, reaches the front end surface of the nozzle end 73D, and is opened.

如圖1及圖2所示,於電漿生成部3中之夾著電極單元20且與配置有滌洗噴嘴70之側相反側(圖2中為左側)配置有排氣路徑19。As shown in FIG. 1 and FIG. 2, an exhaust path 19 is disposed in the plasma generating unit 3 on the side opposite to the side on which the cleaning nozzle 70 is disposed (the left side in FIG. 2).

於上述構成之電漿處理裝置1中,為了對被處理物9進行電漿處理,於向電極單元20供給電力並使處理氣體電漿化時,同時使滌洗裝置7動作。即,將滌洗氣體(N2 )自滌洗氣體源7a經由供給路徑7b而向滌洗噴嘴70導入。滌洗氣體係自滌洗氣體出口76導入至引導路徑77,進而分流至3個噴出路徑78B、78C、78D中。該滌洗氣體自各噴出路徑78B、78C、78D噴出至各內側間隙14B、14C、14D內。In the plasma processing apparatus 1 having the above configuration, in order to plasma-treat the workpiece 9, when the electric power is supplied to the electrode unit 20 and the processing gas is plasma-formed, the scrubbing apparatus 7 is simultaneously operated. That is, the scrubbing gas (N 2 ) is introduced from the scrubbing gas source 7a to the scrubbing nozzle 70 via the supply path 7b. The scrubbing gas system is introduced into the guide path 77 from the scrubbing gas outlet 76, and is further branched into the three discharge paths 78B, 78C, and 78D. The scrubbing gas is ejected from the respective discharge paths 78B, 78C, and 78D into the respective inner gaps 14B, 14C, and 14D.

上述滌洗氣體於各內側間隙14B、14C、14D內沿著內側電極21B、21C、21D之下端面向長度方向之另一端側(圖2中為左側)流動。而且,自各內側間隙14B、14C、14D之長度方向之另一端側之開口向外罩內空間18流出。藉此,可將間隙14B、14C、14D內之環境氣體置換成滌洗氣體(N2 )。由此,即便於該等間隙14B、14C、14D之角落部15產生沿面放電,亦可防止於間隙14B、14C、14D內產生臭氧等腐蝕性成分。縱使於間隙14B、14C、14D內產生腐蝕性成分,亦可藉由滌洗氣體之流動而將該腐蝕性成分自間隙14B、14C、14D推出。因此,可抑制或防止內側電極21B、21C、21D之下端面與腐蝕性成分接觸。其結果,可抑制或防止內側電極21B、21C、21D之下端部腐蝕。The scrubbing gas flows in the inner gaps 14B, 14C, and 14D along the other end side (the left side in FIG. 2) of the lower end faces of the inner electrodes 21B, 21C, and 21D in the longitudinal direction. Further, the opening from the other end side in the longitudinal direction of each of the inner gaps 14B, 14C, and 14D flows out to the outer cover inner space 18. Thereby, the ambient gas in the gaps 14B, 14C, and 14D can be replaced with the scrubbing gas (N 2 ). Thereby, even if creeping discharge occurs in the corner portions 15 of the gaps 14B, 14C, and 14D, corrosive components such as ozone can be prevented from being generated in the gaps 14B, 14C, and 14D. Even if a corrosive component is generated in the gaps 14B, 14C, and 14D, the corrosive component can be pushed out from the gaps 14B, 14C, and 14D by the flow of the scrubbing gas. Therefore, it is possible to suppress or prevent the lower end faces of the inner electrodes 21B, 21C, and 21D from coming into contact with corrosive components. As a result, it is possible to suppress or prevent corrosion of the lower end portions of the inner electrodes 21B, 21C, and 21D.

再者,於在由各電極21之上端面與介電構件30而形成之角落部產生沿面放電,且產生臭氧等腐蝕性成分之情形時,該腐蝕性成分藉由來自電極21之熱量所產生之對流而遠離電極21之上端面,進而自上側間隙13向外罩內空間18流出。又,於在由外側電極21A、21E之下端面與介電構件30而形成之角落部產生起因於沿面放電之腐蝕性成分之情形時,該腐蝕性成分隨著間隙14A、14E內之氣體之對流而容易自間隙14A、14E之側部之開口等向外罩內空間18流出。進而,於在由各電極21之長度方向之兩端面與介電構件30而形成之角落部產生起因於沿面放電之腐蝕性成分之情形時,該腐蝕性成分隨著電極21之長度方向之端面之周邊的環境氣體的對流而遠離電極21,且容易向外罩內空間18流出。因此,各電極21A~21E之上端部及長度方向之兩端部、以及外側電極21A、21E之下端部基本上未腐蝕。Further, when a creeping discharge occurs in a corner portion formed by the upper end surface of each electrode 21 and the dielectric member 30, and a corrosive component such as ozone is generated, the corrosive component is generated by heat from the electrode 21. The convection is away from the upper end surface of the electrode 21, and further flows out from the upper gap 13 to the outer cover space 18. Further, when a corrosive component due to creeping discharge is generated in a corner portion formed by the lower end surface of the outer electrode 21A, 21E and the dielectric member 30, the corrosive component follows the gas in the gap 14A, 14E. The convection easily flows out of the outer casing inner space 18 from the opening of the side portions of the gaps 14A and 14E. Further, when a corrosive component due to creeping discharge is generated in a corner portion formed by the end faces of the respective electrodes 21 in the longitudinal direction and the dielectric member 30, the corrosive component faces the end face of the electrode 21 in the longitudinal direction. The ambient gas around it is convectively separated from the electrode 21 and easily flows out into the inner space 18 of the outer cover. Therefore, the end portions of the upper electrodes and the longitudinal direction of the respective electrodes 21A to 21E and the lower end portions of the outer electrodes 21A and 21E are substantially not corroded.

流出或擴散至外罩內空間18之臭氧與外罩內空間18之環境氣體一起自排氣路徑19抽出並排出。由於排氣路徑19位於間隙14B、14C、14D內之滌洗氣體之流動方向之下流側,因此可更順利地進行滌洗。The ozone flowing out or diffusing into the inner space 18 of the outer casing is taken out from the exhaust path 19 together with the ambient gas in the inner space 18 of the outer casing and discharged. Since the exhaust path 19 is located on the flow side below the flow direction of the scrubbing gas in the gaps 14B, 14C, and 14D, the washing can be performed more smoothly.

本發明並不限定於上述實施形態,於不變更發明之主旨之範圍內可形成各種改變。The present invention is not limited to the above embodiments, and various modifications can be made without departing from the spirit and scope of the invention.

例如,電極單元20之電極個數只要為3個以上即可,既可為4個,亦可為6個以上。較佳為於並列方向之兩端配置接地電極。For example, the number of electrodes of the electrode unit 20 may be three or more, and may be four or six or more. It is preferable to arrange a ground electrode at both ends of the parallel direction.

電極21之長度方向亦可上下朝向、短邊方向亦可水平朝向。電極21亦可相對於垂直而傾斜。The longitudinal direction of the electrode 21 may be vertically oriented, and the short side direction may be horizontally oriented. The electrode 21 can also be inclined with respect to the vertical.

相鄰之間隙14B、14C、14D內之滌洗氣體之流動方向亦可相反。於此情形時,亦可於電極單元20之兩側分別設置滌洗噴嘴。The flow direction of the scrubbing gas in the adjacent gaps 14B, 14C, 14D may also be reversed. In this case, a washing nozzle may be separately provided on both sides of the electrode unit 20.

亦可將滌洗噴嘴插入至處理氣體導出部40內。亦可於處理氣體導出部40內形成滌洗氣體路徑77、78。亦可將滌洗氣體自間隙14之長度方向之中間部供給至間隙14內。The scrubbing nozzle can also be inserted into the process gas discharge portion 40. The scrubbing gas paths 77 and 78 may also be formed in the process gas discharge unit 40. The scrubbing gas may also be supplied into the gap 14 from the intermediate portion in the longitudinal direction of the gap 14.

亦可於外側間隙14A、14E內流動滌洗氣體。亦可於各電極21A~21E之上側間隙13內流動滌洗氣體。亦可使滌洗氣體沿著各電極21A~21E之長度方向之端部流動。The scrubbing gas may also flow in the outer gaps 14A, 14E. The scrubbing gas may also flow in the upper side gap 13 of each of the electrodes 21A to 21E. The scrubbing gas may also flow along the end portions of the respective electrodes 21A to 21E in the longitudinal direction.

亦可將被處理物9配置於氣體導出部40之下方,使經電漿化之處理氣體自導出路徑41向下方噴出,且使其與被處理物9接觸。亦可省略連接路徑4及處理氣體噴嘴5。或者,亦可使處理氣體噴嘴5與氣體導出部40成為一體。The workpiece 9 may be placed below the gas discharge unit 40, and the plasma-treated process gas may be discharged downward from the outlet path 41 and brought into contact with the workpiece 9. The connection path 4 and the process gas nozzle 5 can also be omitted. Alternatively, the processing gas nozzle 5 and the gas outlet portion 40 may be integrated.

於產生不均勻之放電之情形時等,亦可於放電生成面27形成凹凸。進而,相對向之一對放電生成面27並非必需平行。When the uneven discharge is generated, irregularities may be formed on the discharge generating surface 27. Further, it is not necessary to be parallel to one of the pair of discharge generating faces 27.

[產業上之可利用性][Industrial availability]

本發明可適用於例如半導體裝置之製造中。The present invention is applicable to, for example, the manufacture of semiconductor devices.

1...電漿處理裝置1. . . Plasma processing device

2...處理氣體源2. . . Process gas source

2a...處理氣體供給路徑2a. . . Process gas supply path

3...電漿生成部3. . . Plasma generation department

4...連接路徑4. . . Connection path

5...處理氣體噴嘴5. . . Process gas nozzle

5a...噴口5a. . . spout

6...被處理物支持部6. . . Object support department

7...滌洗裝置7. . . Washing device

7a...滌洗氣體源7a. . . Washing gas source

7b...滌洗氣體供給路徑7b. . . Washing gas supply path

9...被處理物9. . . Treated object

10...外罩10. . . Cover

11...頂板(氣體導入部)11. . . Top plate (gas introduction part)

12...氣體導入路徑12. . . Gas introduction path

13...上側間隙13. . . Upper gap

14(14A、14B、14C、14D、14E)...下側間隙14 (14A, 14B, 14C, 14D, 14E). . . Lower gap

15...角落部15. . . Corner

18...外罩內空間18. . . Inside the enclosure

19...排氣路徑19. . . Exhaust path

20...電極單元20. . . Electrode unit

21...電極twenty one. . . electrode

21A、21E...外側電極21A, 21E. . . Outer electrode

21B、21C、21D...內側電極21B, 21C, 21D. . . Inner electrode

27...放電生成面27. . . Discharge generating surface

28...冷卻路徑28. . . Cooling path

29...插塞29. . . Plug

30...介電構件30. . . Dielectric member

31...上凸緣31. . . Upper flange

32...下凸緣32. . . Lower flange

33...密封部33. . . Sealing part

34...狹縫狀通路34. . . Slit path

35...放電空間35. . . Discharge space

40...氣體導出部40. . . Gas export department

41...氣體導出路徑41. . . Gas export path

70...滌洗噴嘴70. . . Washing nozzle

71...噴嘴本體71. . . Nozzle body

72(72b、72c、72d)...碰觸面72 (72b, 72c, 72d). . . Touch surface

73(73B、73C、73D)...噴嘴端73 (73B, 73C, 73D). . . Nozzle end

74...安裝部74. . . Installation department

75...切口75. . . incision

76...滌洗氣體出口76. . . Washing gas outlet

77...滌洗氣體引導路徑77. . . Washing gas guiding path

78(78B、78C、78D)...滌洗氣體噴出路徑78 (78B, 78C, 78D). . . Washing gas ejection path

圖1係表示本發明之一實施形態中之電漿處理裝置之概略構成之解說前視圖。Fig. 1 is a front view showing the schematic configuration of a plasma processing apparatus according to an embodiment of the present invention.

圖2係表示上述電漿處理裝置之電漿生成部,沿著圖3之II-II線之前視剖面圖。Fig. 2 is a front cross-sectional view showing the plasma generating portion of the plasma processing apparatus taken along line II-II of Fig. 3;

圖3係表示上述電漿生成部,沿著圖2之III-III線之側面剖面圖。Fig. 3 is a side cross-sectional view showing the plasma generating portion taken along line III-III of Fig. 2;

圖4係表示上述電漿生成部之滌洗噴嘴之配置部分,沿著圖2之IV-IV線之平面剖面圖。Fig. 4 is a plan sectional view showing a portion of the cleaning nozzle of the plasma generating portion taken along line IV-IV of Fig. 2;

圖5係上述滌洗噴嘴之立體圖。Figure 5 is a perspective view of the above-described washing nozzle.

1...電漿處理裝置1. . . Plasma processing device

2...處理氣體源2. . . Process gas source

2a...處理氣體供給路徑2a. . . Process gas supply path

3...電漿生成部3. . . Plasma generation department

4...連接路徑4. . . Connection path

5...處理氣體噴嘴5. . . Process gas nozzle

5a...噴口5a. . . spout

6...被處理物支持部6. . . Object support department

7...滌洗裝置7. . . Washing device

7a...滌洗氣體源7a. . . Washing gas source

7b...滌洗氣體供給路徑7b. . . Washing gas supply path

9...被處理物9. . . Treated object

10...外罩10. . . Cover

11...頂板(氣體導入部)11. . . Top plate (gas introduction part)

12...氣體導入路徑12. . . Gas introduction path

13...上側間隙13. . . Upper gap

14...下側間隙14. . . Lower gap

18...外罩內空間18. . . Inside the enclosure

19...排氣路徑19. . . Exhaust path

20...電極單元20. . . Electrode unit

21...電極twenty one. . . electrode

30...介電構件30. . . Dielectric member

40...氣體導出部40. . . Gas export department

41...氣體導出路徑41. . . Gas export path

70...滌洗噴嘴70. . . Washing nozzle

73...噴嘴端73. . . Nozzle end

Claims (3)

一種電漿處理裝置,其係使處理氣體通過接近大氣壓之放電空間而導出,且使上述導出後之處理氣體與配置於上述放電空間之外部之被處理物接觸者,其特徵在於包括:3個以上之電極,各自形成使厚度方向相對於上下方向交叉之板狀,且於上述厚度方向上間隔地排列;複數之介電構件,包含覆蓋上述各電極之與相鄰電極對向之對向面,且自該對向面向下突出之板狀之固體介電質;以及外罩,其收容上述電極及上述介電構件;分別設置於上述3個以上之電極之與相鄰電極對向之面之介電構件彼此間形成有狹縫狀通路,藉由於上述相鄰電極彼此之間施加電場而形成上述放電空間於上述狹縫狀通路內,上述處理氣體經由上述狹縫狀通路從上述外罩導出而供給至上述被處理物;該電漿處理裝置進而包括滌洗裝置,將包含有別於上述處理氣體之惰性氣體之滌洗氣體導入上述外罩內,使其與上述3個以上之電極中配置於內側之內側電極之與上述對向面交叉且朝下之下端面接觸,而沿著上述下端面流動,並將角落部之氣體以上述滌洗氣體置換,其中上述角落部係由上述內側電極之上述下端面、與設於該內側電極之上述對向面之介電構件之上述向下突出部分所形成。 A plasma processing apparatus for discharging a processing gas through a discharge space close to atmospheric pressure, and contacting the processed gas after the derivation with a workpiece disposed outside the discharge space, comprising: three Each of the electrodes has a plate shape that intersects the thickness direction with respect to the vertical direction, and is arranged at intervals in the thickness direction. The plurality of dielectric members include an opposite surface of the electrode facing the adjacent electrode. And a plate-shaped solid dielectric material protruding downward from the opposite direction; and an outer cover accommodating the electrode and the dielectric member; respectively disposed on a surface opposite to the adjacent electrode of the three or more electrodes A dielectric path is formed between the dielectric members, and an electric field is applied between the adjacent electrodes to form the discharge space in the slit-shaped passage, and the processing gas is led out from the outer cover via the slit-shaped passage. Supplying to the object to be treated; the plasma processing device further comprising a scrubbing device, which will contain an inert gas different from the process gas The gas is introduced into the outer cover so as to be in contact with the opposing surface of the inner electrode disposed on the inner side of the three or more electrodes, and is in contact with the lower end surface, and flows along the lower end surface, and the corner portion is The gas is replaced by the scrubbing gas, wherein the corner portion is formed by the lower end surface of the inner electrode and the downwardly projecting portion of a dielectric member provided on the opposite surface of the inner electrode. 如請求項1之電漿處理裝置,其中上述滌洗裝置包括配置於上述內側電極之上述下端面之與上述厚度方向正交之長度方向之一端側,並沿著上述長度方向噴出上述滌洗氣體之滌洗噴嘴。 The plasma processing apparatus according to claim 1, wherein the cleaning device includes one end side disposed in a longitudinal direction orthogonal to the thickness direction of the lower end surface of the inner electrode, and ejecting the cleaning gas along the longitudinal direction Washing nozzle. 如請求項2之電漿處理裝置,其中在上述外罩內,氣體導出部遠離上述3個以上之電極之下方,且以橫跨該等電極之方式而設,上述各介電構件之下端部與上述氣體導出部相連結,於上述氣體導出部之內部形成有與上述狹縫狀通路相連接之氣體導出路徑,上述處理氣體從上述狹縫狀通路經由上述氣體導出路徑供給至上述被處理物,上述內側電極之上述下端面與上述上述氣體導出部之間形成有包含上述角落部之內側間隙,且上述滌洗噴嘴係以面向上述內側間隙之上述長度方向之上述一端側之開口的方式而配置,且上述內側間隙之上述長度方向之另一端側之開口為開放。The plasma processing apparatus of claim 2, wherein the gas outlet portion is located below the three or more electrodes in the outer cover, and is disposed across the electrodes, and the lower ends of the dielectric members are The gas lead-out portion is connected to the inside of the gas lead-out portion, and a gas lead-out path connected to the slit-shaped passage is formed, and the processing gas is supplied from the slit-shaped passage to the workpiece through the gas lead-out path. An inner gap including the corner portion is formed between the lower end surface of the inner electrode and the gas lead-out portion, and the cleaning nozzle is disposed to face the one end side opening in the longitudinal direction of the inner gap. And the opening on the other end side in the longitudinal direction of the inner gap is open.
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