JP4362586B2 - High heat-resistant conductive thin film manufacturing method, high heat-resistant conductive thin film obtained by the manufacturing method, laminated film, and device including the laminated film - Google Patents

Description

  The present invention relates to a method for producing a high heat-resistant conductive thin film used for electronic parts, a high heat-resistant conductive thin film obtained by the production method, a laminated film, and a device comprising the laminated film, and in particular, a platinum group The present invention relates to a laminated film having a thin film containing an element and a thin film containing a refractory metal element, a method for producing a highly heat-resistant conductive thin film using the laminated film, and a device having the laminated film.

  2. Description of the Related Art Conventionally, as a heat-resistant conductor used in a high-temperature environment, a material obtained by sintering a refractory metal such as tungsten or molybdenum having excellent high-temperature stability and resistance temperature coefficient has been widely used. When used as a thin film on a substrate, such a conductor must consider not only its high temperature stability and resistance temperature coefficient, but also its mechanical properties. This is because when the environmental temperature changes, the refractory metal changes in quality, becomes non-conductive, and / or has poor conductivity, and further cracks due to the difference in thermal expansion coefficient between the substrate and the refractory metal thin film. This is because formation and / or peeling occurs.

A binary alloy or a ternary alloy is used for the electrode using the heat-resistant conductive thin film. Examples of the binary alloy include Ta metal, TaN compound, and Ni—Cr alloy. Since binary alloys are difficult to achieve good high temperature stability and resistance temperature characteristics at the same time, in order to improve high temperature stability and resistance temperature characteristics, a small amount of Be, Si, Al, etc. Added ternary alloys or Ni—Cr—Al—Si quaternary alloys have been developed (see, for example, Patent Document 1). In addition, the resistance value of a refractory metal such as tungsten greatly varies between a low temperature environment and a high temperature environment due to a large resistance temperature coefficient. In order to reduce the temperature coefficient of resistance, a metal resistor used as a heating element of a heater has been developed which contains a refractory metal and a platinum group element to form a thick film (see, for example, Patent Document 2).
JP 6-20803 A (published January 28, 1994) JP 2001-266639 A (published September 28, 2001)

  However, in the above conventional configuration, there arises a problem that the heat-resistant conductive thin film does not have good mechanical properties. That is, until now, no heat-resistant conductive thin film satisfying all of high-temperature stability, resistance temperature coefficient, and mechanical properties has existed.

  Specifically, when a conductive thin film is used in a high temperature environment (for example, 1000 ° C. or higher), a difference in thermal expansion coefficient, a residual stress generated during film formation, or a microscopic structural change at high temperature. Due to a change in composite internal stress generated by the above, disconnection accompanying the generation of cracks and peeling of the thin film occur.

  The present invention has been made in view of the above-mentioned problems, and the object thereof is a highly heat-resistant conductive thin film that does not change its shape even at a high temperature (for example, a high temperature of 1000 ° C. or higher) and maintains good conductivity. Manufacturing method, a highly heat-resistant conductive thin film obtained by the manufacturing method, a laminated film, and a device comprising the laminated film. In other words, an object of the present invention is to supply a thin film material (laminated film), a method for producing a highly heat-resistant conductive thin film formed from the thin film material, and a device having the laminated film as its use. .

A method for producing a highly heat-resistant conductive thin film according to the present invention includes:
Forming at least one thin film of a platinum group element selected from the group consisting of ruthenium (Ru), rhodium (Rh), palladium (Pd), iridium (Ir) and platinum (Pt):
On the thin film, yttrium (Y), titanium (Ti), tungsten (W), zirconium (Zr), niobium (Nb), molybdenum (Mo), tantalum (Ta), chromium (Cr), cobalt (Co) At least a refractory metal element selected from the group consisting of silicon (Si), vanadium (V), iron (Fe), copper (Cu), rhenium (Re), gold (Au) and nickel (Ni) A step of laminating one kind of thin film: and a step of subjecting the laminated film to a high temperature environment,
It is characterized by including.

  According to said structure, when the high heat-resistant electroconductive thin film formed using the said method does not change a shape also in a high temperature environment, and when it forms on a board | substrate, the said high heat-resistant electroconductive thin film does not peel from a board | substrate. There is an effect.

  In the method for producing a highly heat-resistant conductive thin film according to the present invention, the high temperature environment is preferably 1000 ° C. or higher.

  In the method for producing a highly heat-resistant conductive thin film according to the present invention, the high temperature environment is preferably maintained for 30 minutes or more.

  The highly heat-resistant conductive thin film according to the present invention is manufactured by the above-described method.

  According to said structure, there exists an effect that the said high heat resistant conductive thin film does not change a shape also in a high temperature environment.

  The highly heat-resistant conductive thin film for use in the electrode according to the present invention is a platinum group element selected from the group consisting of ruthenium (Ru), rhodium (Rh), palladium (Pd), iridium (Ir), and platinum (Pt). At least one of yttrium (Y), titanium (Ti), tungsten (W), zirconium (Zr), niobium (Nb), molybdenum (Mo), tantalum (Ta), chromium (Cr), cobalt (Co) At least a refractory metal element selected from the group consisting of silicon (Si), vanadium (V), iron (Fe), copper (Cu), rhenium (Re), gold (Au) and nickel (Ni) 1 type, and the film thickness is 100 μm or less.

  According to said structure, there exists an effect that a highly heat-resistant electroconductive thin film used for the said electrode does not change a shape also in a high temperature environment.

  The highly heat-resistant conductive thin film for use in the electrode according to the present invention is preferably obtained by subjecting a laminated film including the thin film containing the platinum group element and the thin film containing the refractory metal element to a high temperature environment.

  The highly heat-resistant conductive thin film for use in the electrode according to the present invention is preferably provided on a substrate.

  In order to solve the above problems, the laminated film according to the present invention is a platinum group element selected from the group consisting of ruthenium (Ru), rhodium (Rh), palladium (Pd), iridium (Ir), and platinum (Pt). And a thin film containing at least one kind of yttrium (Y), titanium (Ti), tungsten (W), zirconium (Zr), niobium (Nb), molybdenum (Mo), tantalum (Ta), chromium (Cr), cobalt Refractory metal selected from the group consisting of (Co), silicon (Si), vanadium (V), iron (Fe), copper (Cu), rhenium (Re), gold (Au) and nickel (Ni) A thin film containing at least one kind of element is provided.

  According to said structure, there exists an effect that a highly heat-resistant electroconductive thin film formed using the said laminated film does not change a shape also in a high temperature environment.

  In the laminated film according to the present invention, the refractory metal element is preferably tungsten (W), molybdenum (Mo), or chromium (Cr).

  In the laminated film according to the present invention, the platinum group element is preferably ruthenium (Ru), rhodium (Rh), or iridium (Ir).

  In order to solve the above problems, a device according to the present invention is characterized in that the laminated film according to the present invention is provided on a substrate.

  According to said structure, there exists an effect that the highly heat-resistant electroconductive thin film formed using the said laminated film does not change a shape also in a high temperature environment, and does not peel from on a board | substrate.

  In the device according to the present invention, the substrate preferably includes an oxide, a nitride, a carbide, or a combination thereof.

  In the device according to the present invention, the substrate preferably includes a ceramic material.

  In the device according to the present invention, the substrate is made of aluminum nitride, zinc oxide, lithium niobate, silicon oxide, lithium tantalate, lead zirconate, lead zirconate titanate, lead titanate, barium titanate, lead niobate, nitride It is preferable to include at least one ceramic material selected from the group consisting of silicon, silicon carbide, aluminum oxide, quartz glass, magnesium oxide, mullite and strontium titanate.

  In the device according to the present invention, the substrate preferably contains zirconium.

  According to the method for producing a highly heat-resistant conductive thin film according to the present invention, a highly heat-resistant conductive thin film that does not change its shape even in a high-temperature environment (for example, a high temperature of 1000 ° C. or higher) and maintains good conductivity can be easily obtained. There is an effect that it can be manufactured.

  An embodiment of the present invention will be described below with reference to FIGS.

  FIG. 1 is a sectional view of a device 10 in which a thin film 2 made of a platinum group element and a thin film 3 made of a refractory metal element are sequentially formed on a substrate 1. FIG. 2 shows a cross-sectional view of a device 10 in which a thin film 3 made of a refractory metal element and a thin film 2 made of a platinum group element are sequentially formed on a substrate 1. FIG. 3 shows a device 10 having a high heat-resistant conductive thin film 5 on a substrate 1 in which a layer made of a platinum group element and a layer made of a refractory metal element are mixed.

  In the device 10 of the present embodiment, the laminated film 4 provided with the thin layers 2 and 3 does not change its shape even at a high temperature, and can maintain good conductivity without peeling off the thin film. For this reason, the device 10 can be used as an electrode of an electric circuit and an electric element under a high temperature such as a melting furnace, a combustion furnace, or an internal combustion engine. More specifically, the laminated film 4 and the device 10 are used as an electrode constituting a laminated structure of piezoelectric elements, an electrode of a high-temperature strain gauge, an electrode of a high-temperature vibration sensor, or an electrode for measuring thermal conductivity near the silicon melting temperature. Can be used. For this reason, the “laminate film” 4 referred to in this specification can also be referred to as a high heat-resistant conductive thin film.

  Further, in the device 11 of the present embodiment, the high heat-resistant conductive thin film 5 formed by placing the substrate 1 having the thin layers 2 and 3 in a high temperature environment does not change its shape even at high temperatures, and the thin film Good conductivity can be maintained without peeling. For this reason, the device 11 can be used as an electrode of an electric circuit and an electric element at a high temperature such as a melting furnace, a combustion furnace, or an internal combustion engine. More specifically, the high heat-resistant conductive thin film 5 and the device 11 are composed of an electrode constituting a laminated structure of piezoelectric elements, an electrode of a high-temperature strain gauge, an electrode of a high-temperature vibration sensor, or a thermal conductivity measurement near the silicon melting temperature. Can be used as an electrode.

  1 and 2 show a device 10 in which thin layers 2 and 3 are provided on a substrate 1, those skilled in the art will appreciate that the configuration shown in FIGS. 1 and 2 is an embodiment of the present invention. Is easy to understand. That is, the laminated film 4 of the present embodiment including the thin layers 2 and 3 does not change its shape even at a high temperature, whether or not laminated on the substrate 1, and has a high heat resistance that maintains good conductivity. The conductive thin film 5 can be formed. Specifically, the device 10 shown in FIG. 1 or 2 changes to the configuration shown in FIG. 3 when placed in a high temperature environment.

  The laminated film 4 of the present embodiment can also form a high heat-resistant conductive thin film 5 that does not change its shape even at a high temperature and retains good conductivity. As a result, a melting furnace, a combustion furnace, or an internal combustion engine can be formed. It can be used as an electrode of an electric circuit and an electric element under a high temperature such as an engine. More specifically, the high heat-resistant conductive thin film 5 of the present invention is an electrode for forming a laminated structure of piezoelectric elements, an electrode for a high-temperature strain gauge, an electrode for a high-temperature vibration sensor, or a thermal conductivity measurement near the silicon melting temperature. Can be used as an electrode.

  The laminated film 4 includes a thin film 2 made of a platinum group element and a thin film 3 made of a refractory metal element. Preferably, the laminated film 4 is formed by stacking a thin film 2 made of a platinum group element and a thin film 3 made of a refractory metal element. The thin film 2 and the thin film 3 may be sequentially formed on the substrate 1 or the thin film 3 and the thin film 2 may be sequentially formed. When the thin film 3 is formed on the thin film 2, the thin film 3 may cover the thin film 2 completely or partially. Similarly, when the thin film 2 is formed on the thin film 3, the thin film 2 may cover the thin film 3 completely or partially.

  The high heat-resistant conductive thin film 5 can be in a form that can be wired when used as an electrode. In a preferred embodiment, the high heat-resistant conductive thin film 5 is provided with a conduction port at a proper position in a manner that allows energization. The conduction port may be provided at the central portion of the high heat-resistant conductive thin film 5 or may be a marginal portion, and may or may not penetrate therethrough.

  The present invention provides a laminated film comprising a thin film containing at least one platinum group element and a thin film containing at least one refractory metal element. As used herein, the term “platinum group element” is intended to refer to elements of the fifth and sixth periods of groups 8, 9 and 10 of the periodic table of elements, ruthenium, rhodium, palladium, osmium, Iridium and platinum. As used herein, the term “refractory metal element” intends an element having a melting point of 1000 ° C. or higher. As used herein, the term “at least one” element may be a single element or a combination of multiple elements. Those skilled in the art will readily understand that the laminated film 4 may comprise a single metal thin film or an alloy thin film.

  In a preferred embodiment, the platinum group element used in the laminated film 4 is selected from the group consisting of ruthenium (Ru), rhodium (Rh), palladium (Pd), iridium (Ir), and platinum (Pt), and the laminated film The refractory metal elements used for 4 are yttrium (Y), titanium (Ti), tungsten (W), zirconium (Zr), niobium (Nb), molybdenum (Mo), tantalum (Ta), and chromium (Cr). , Cobalt (Co), silicon (Si), vanadium (V), iron (Fe), copper (Cu), rhenium (Re), gold (Au) and nickel (Ni). In a more preferred embodiment, the refractory metal element is tungsten (W), molybdenum (Mo) or chromium (Cr), and the platinum group element is ruthenium (Ru), rhodium (Rh) or iridium (Ir). It is. Most preferably, the refractory metal element is tungsten (W) and the platinum group element is ruthenium (Ru).

  In one aspect, the laminated film 4 is formed on the substrate 1. As a method for forming the laminated film 4 on the substrate 1, various known physical vapor deposition methods (PVD methods) (for example, vacuum deposition methods (for example, thermal deposition, electron beam deposition, laser deposition), Ion plating method, activated vapor deposition method, arc vapor deposition method, ion cluster vapor deposition method, ion beam vapor deposition method, electrodeposition method (for example, electropolymerization method), sputtering method (for example, DC sputtering method, high frequency sputtering method, high frequency plasma) Examples thereof include, but are not limited to, a assisted sputtering method, a magnetron sputtering method, an ECR sputtering method or an ion beam sputtering method), or a chemical vapor deposition method (CVD method). The film is formed on the substrate 1. Particularly preferably, the laminated film 4 is formed by magnetron sputtering. Using the magnetron sputtering method, when the magnetron sputtering method is used, the preferred substrate temperature and target input power settings for the laminated film 4 are determined by those skilled in the art depending on the type of sputtering gas used. The preferred sputtering gas is neon, argon, krypton, xenon or nitrogen, particularly preferably argon, when argon is used, the preferred substrate temperature and target input power are room temperature, respectively. ˜600 ° C. and 100 to 2000 watts (W).

  The laminated film 4 has a thickness of 100 μm or less. Preferably, the laminated film 4 has a thickness of 1 μm or less, more preferably 10 nm to 500 nm. Most preferably, the thickness of the laminated film 4 is 50 nm to 200 nm.

  As described above as a prior art, a heat-resistant conductive thin film suitable for using an electrode satisfying all of high-temperature stability, resistance temperature coefficient, and mechanical properties containing a plurality of metals has not been known yet. Patent Document 2 discloses a metal resistor in which a refractory metal contains a platinum group element as a second metal component. The metal resistor is formed using a thick film printing method, and is used as a heating element of a heater. It is difficult to recognize that a thick film material that is normally used for a heating element can be used for a thin film electrode, and it is not easy to produce an alloy by mixing a refractory metal and a platinum group element. According to such a conventional technique, it has been difficult for those skilled in the art to obtain the highly heat-resistant conductive thin film of the present invention without undue experimentation.

  The present inventors have found that a highly heat-resistant conductive thin film suitable for using an electrode containing a platinum group element and a refractory metal element can be produced by using a thin film forming method. Specifically, the present inventors have found that the high heat-resistant conductive thin film 5 formed from the laminated film 4 is used for electrodes of electric circuits and electric elements at high temperatures. The high heat resistant conductive thin film 5 has a thickness of 100 μm or less. Those skilled in the art will readily understand that the preferred thickness of a thin film for use in an electrode is 100 μm or less. Preferably, the high heat-resistant conductive thin film 5 has a thickness of 1 μm or less, more preferably 10 nm to 500 nm. Most preferably, the high heat resistant conductive thin film 5 has a thickness of 50 nm to 200 nm.

  When used as an electrode constituting a laminated structure of piezoelectric elements, the high heat-resistant conductive thin film 5 sandwiches the upper surface and the lower surface of the substrate of the piezoelectric element.

  The present invention also provides a device in which the laminated film 4 is provided on the substrate 1. As used herein, the substrate can be any material, but an insulating substrate that does not interfere with the properties of the refractory metal thin film is preferred.

  The substrate 1 used in the device 10 is easily selected by those skilled in the art to be optimal in accordance with the type of the refractory metal element used in the laminated film 4. In preferred embodiments, it includes oxides, nitrides, carbides or combinations thereof. The substrate 1 used in the device 10 includes a ceramic material. Preferably, the substrate 1 used in the device 10 is made of, for example, aluminum nitride, zinc oxide, lithium niobate, silicon oxide, lithium tantalate, lead zirconate, lead zirconate titanate, lead titanate as ceramic materials. Examples include but are not limited to barium titanate, lead niobate, silicon nitride, silicon carbide, aluminum oxide, quartz glass, magnesium oxide, mullite, and strontium titanate. The substrate 1 used in the device 10 may be used alone or in combination. Most preferably, the substrate 1 used in the device 10 comprises zirconia.

  As used herein, the term “under high temperature environment” intends an ambient temperature of 1000 ° C. or higher, preferably 1300 ° C. or higher, and most preferably 1400 ° C. or higher. The device 10 does not change shape when placed in a high temperature environment for at least 1 minute, preferably 5 minutes to 200 hours, most preferably 10 minutes to 200 hours, and has good conductivity without peeling off the thin film. Property (preferably 0.01 to 100Ω) can be maintained.

  When the device 10 has the substrate 1, the stacked film 4 can be easily formed and handled. The substrate 1 used in the device 10 has a thickness of 50 μm to 5 mm, but those skilled in the art can appropriately set a preferable thickness of the substrate according to the application. For example, when the device 10 is used for a vibration sensor, the thickness of the substrate is preferably 0.5 to 3 mm, and most preferably 0.5 to 1 mm. When device 10 is used for a thermal conductivity sensor, a thinner substrate is preferred, and the thickness of the substrate is at least 500 μm or less, preferably 200 μm or less, more preferably 100 μm or less, and most preferably 50 μm.

  When the device 10 is used as an electrode constituting a laminated structure of piezoelectric elements, the upper and lower surfaces of the piezoelectric element substrate are sandwiched between the laminated films 4.

  In another embodiment, the device 10 includes a connection terminal for connecting to a wiring board. Preferably, the device 10 does not deform even when a load is applied in the thickness direction for connection.

  Thus, it can be said that the laminated film laminated film according to the present invention only needs to include at least a thin film containing a platinum group element and a thin film containing a refractory metal element. And it can be said that the device concerning this invention should just have the said laminated film laminated film. That is, it should be noted that the present invention includes a device composed of a plurality of thin films containing a platinum group element and a plurality of thin films containing a refractory metal element, and a thin film made of a material other than these thin films is also included in the present invention. It should be noted that the inclusion is included in the technical scope of the present invention.

  That is, an object of the present invention is to provide a thin film material (laminated film laminated film) that does not change its shape even at a high temperature (for example, a high temperature of 1000 ° C. or higher) and maintains good conductivity, and the laminated film laminated film as its use. However, the present invention does not exist in the conditions such as the individual thin film forming method, processing method, and temperature control specifically described in the present specification. Therefore, it should be noted that laminated films and devices manufactured using methods other than the above methods also belong to the scope of the present invention.

  The invention is illustrated in more detail by the following examples, but should not be limited thereto.

  A device was produced in which a platinum group element thin film and a refractory metal thin film were sequentially formed on a zirconia substrate by RF magnetron sputtering. The refractory metal thin film does not completely cover the platinum group element thin film. Specifically, ruthenium (Ru) as a platinum group element and tungsten (W) as a refractory metal are each used as a target, argon is used as a sputtering gas, a substrate temperature is 500 ° C., a target input power is 100 watts (W). It was done in. The film thickness was 100 nm for both Ru and W. After film formation, the device was heat-treated at 1450 ° C. for 1 hour under an argon atmosphere. The electrical resistance of the refractory metal in this device after the heat treatment was 5.7Ω as before the heat treatment.

[Comparative Example 1]
A device in which a chromium (Cr) thin film was formed on a zirconia substrate was produced under the same conditions as in the above example except that the film thickness was 200 nm, and then heat-treated. In this device after heat treatment, the chromium thin film, which is a refractory metal, was altered and made non-conductive.

[Comparative Example 2]
A device having a titanium (Ti) thin film formed on a zirconia substrate was produced under the same conditions as in the above example except that the film thickness was 200 nm, and then heat-treated. In this device after heat treatment, the titanium thin film, which is a refractory metal, was altered and made non-conductive.

[Comparative Example 3]
A device in which a molybdenum (Mo) thin film was formed on a zirconia substrate was produced under the same conditions as in the above example except that the film thickness was 200 nm, and then heat-treated. In this device after the heat treatment, the molybdenum thin film, which is a refractory metal, had cracks and had poor conductivity.

[Comparative Example 4]
A device in which a tungsten (W) thin film was formed on a zirconia substrate was produced under the same conditions as in the above example except that the film thickness was 200 nm, and then heat-treated. In this device after the heat treatment, the tungsten thin film which is a refractory metal was peeled off.

[Comparative Example 5]
A device having a ruthenium (Ru) thin film formed on a zirconia substrate was produced under the same conditions as in the above example except that the film thickness was 200 nm, and then heat-treated. In this device after the heat treatment, the ruthenium thin film was peeled off.

[Comparative Example 6]
A device in which a platinum (Pt) thin film was formed on a zirconia substrate was produced under the same conditions as in the above example except that the film thickness was 200 nm, and then heat-treated. In this device after the heat treatment, the platinum thin film was peeled off.

  The present invention is not limited to the above-described embodiments, and various modifications can be made within the scope shown in the claims. That is, embodiments obtained by combining technical means appropriately changed within the scope of the claims are also included in the technical scope of the present invention.

  The laminated film of the present invention can be used as an electrode of an electric circuit and an electric element at a high temperature such as a melting furnace, a combustion furnace, or an internal combustion engine. The present invention can also be applied to a vibration sensor electrode or a thermal conductivity measurement electrode near the silicon melting temperature.

FIG. 1 shows an embodiment of the present invention, and shows a sectional view of a device 10 in which a thin film 2 made of a platinum group element and a thin film 3 made of a refractory metal element are sequentially formed on a substrate 1. FIG. 2 shows an embodiment of the present invention, and shows a cross-sectional view of a device 10 in which a thin film 3 made of a refractory metal element and a thin film 2 made of a platinum group element are sequentially formed on a substrate 1. FIG. 3 shows an embodiment of the present invention, and shows a device 10 having a high heat resistant conductive thin film 5 in which a platinum group element and a refractory metal element are mixed on a substrate 1.

Explanation of symbols

1 Substrate 2 Thin film (thin film made of platinum group elements)
3 Thin films (thin films made of refractory metal elements)
4 Laminated film 5 High heat resistance conductive thin film 10 Device 11 Device

Claims (13)

A method for producing a highly heat-resistant conductive thin film comprising the following steps:
Forming a thin film containing at least one platinum group element selected from the group consisting of ruthenium (Ru), rhodium (Rh) and iridium (Ir);
A step of further laminating a thin film containing at least one refractory metal element selected from the group consisting of tungsten (W), molybdenum (Mo) and chromium (Cr) on the thin film; and the laminated film at a high temperature A method for producing a highly heat-resistant conductive thin film comprising a step of subjecting to an environment. A method for producing a highly heat-resistant conductive thin film comprising the following steps:
Forming a thin film containing at least one refractory metal element selected from the group consisting of tungsten (W), molybdenum (Mo) and chromium (Cr);
On the thin film, at least one element selected from the group consisting of ruthenium (Ru), rhodium (Rh) and iridium (Ir) is further selected from the group consisting of ruthenium (Ru), rhodium (Rh) and iridium (Ir). A method for producing a highly heat-resistant conductive thin film comprising the steps of: laminating a thin film containing at least one selected platinum group element; and subjecting the laminated film to a high temperature environment.   The method for producing a highly heat-resistant conductive thin film according to claim 1 or 2, wherein a physical vapor deposition method is used as the step of forming the thin film and the step of laminating the thin film.   The method for producing a highly heat-resistant conductive thin film according to any one of claims 1 to 3, wherein the high-temperature environment is 1000 ° C or higher.   The method for producing a highly heat-resistant conductive thin film according to any one of claims 1 to 4, wherein the high-temperature environment is maintained for 30 minutes or more.   A highly heat-resistant conductive thin film produced by the method according to any one of claims 1 to 5.   The highly heat-resistant conductive thin film according to claim 6, wherein the film thickness is 100 μm or less.   The highly heat-resistant conductive thin film according to claim 7, which is used for an electrode.   A device characterized in that the highly heat-resistant conductive thin film according to any one of claims 6 to 8 is provided on a substrate. The device of claim 9 , wherein the substrate comprises an oxide, a nitride, a carbide, or a combination thereof. The device of claim 9 , wherein the substrate comprises a ceramic material. The substrate is aluminum nitride, zinc oxide, lithium niobate, silicon oxide, lithium tantalate, lead zirconate, lead zirconate titanate, lead titanate, barium titanate, lead niobate, silicon nitride, silicon carbide, aluminum oxide 10. The device of claim 9 , comprising at least one ceramic material selected from the group consisting of: quartz glass, magnesium oxide, mullite, and strontium titanate. The device of claim 9 , wherein the substrate comprises zirconia.

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