JP4357278B2 - Integrated circuit die fabrication method - Google Patents

Integrated circuit die fabrication method Download PDF

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Publication number
JP4357278B2
JP4357278B2 JP2003402763A JP2003402763A JP4357278B2 JP 4357278 B2 JP4357278 B2 JP 4357278B2 JP 2003402763 A JP2003402763 A JP 2003402763A JP 2003402763 A JP2003402763 A JP 2003402763A JP 4357278 B2 JP4357278 B2 JP 4357278B2
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Prior art keywords
substrate
integrated circuit
wafer
die
protective layer
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JP2003402763A
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JP2004363548A (en
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ジェームズ・アンダーソン
ガーション・アカーリング
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Northrop Grumman Corp
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Northrop Grumman Corp
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  • Engineering & Computer Science (AREA)
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  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)

Description

本発明は一般に集積回路を梱包（パッケージ化）する方法（パッケージ方法）に関し、特に、リードフレーム構造体及びワイヤボンドを排除し、集積回路がまだウエファーフォーマット内にある間に試験を可能にするパッケージ方法に関する。   The present invention relates generally to methods for packaging integrated circuits (packaging methods), and more particularly to packages that eliminate leadframe structures and wire bonds and allow testing while the integrated circuit is still in a wafer format. Regarding the method.

当業界で理解されているように、多くの集積回路チップは集積回路ウエファー上でパターン化され、一緒に形成される。ウエファーは直径３−１５インチ（約７６．２−３８１ｍｍ）とすることができ、回路の複雑さに応じてウエファー上でマトリックス形状となって対称的に位置する数百又は数千の集積回路チップを含む。集積回路チップが製作された後、ウエファーが集積回路チップ間で切断され、ウエファーからチップを分離する。次いで、チップは性能試験を受ける。   As is understood in the art, many integrated circuit chips are patterned on an integrated circuit wafer and formed together. The wafer can be 3-15 inches in diameter, and hundreds or thousands of integrated circuit chips that are symmetrically located in a matrix on the wafer, depending on the complexity of the circuit including. After the integrated circuit chips are fabricated, the wafer is cut between the integrated circuit chips to separate the chips from the wafer. The chip is then subjected to a performance test.

集積回路チップがウエファーから分離された後、時には、チップは環境保護等を提供するパッケージ組立体としてパッケージングされる。一般に、集積回路チップは、接地基準及び集積回路チップから熱を除去するための熱カップリングを提供するように金属化した接地面に装着される。リードフレームはパッケージの外側の他の回路素子に対するパワー、信号及び接地接続を提供するために組立体に装着される。リードフレームとチップとの間及びリードフレームと接地面との間に電気的な接続を提供するために、ワイヤボンドが使用される。しかし、ワイヤボンドは、特に高周波数において、集積回路の性能を落とす寄生インダクタンス及びキャパシタンスを生じさせる。   After the integrated circuit chip is separated from the wafer, sometimes the chip is packaged as a package assembly that provides environmental protection and the like. In general, the integrated circuit chip is mounted on a metalized ground plane to provide a ground reference and a thermal coupling to remove heat from the integrated circuit chip. The lead frame is attached to the assembly to provide power, signal and ground connections to other circuit elements outside the package. Wire bonds are used to provide electrical connections between the lead frame and the chip and between the lead frame and the ground plane. However, wire bonds create parasitic inductances and capacitances that degrade integrated circuit performance, especially at high frequencies.

図１は上述の形式の集積回路チップ１２をパッケージングするためのパッケージ組立体１０の断面図である。集積回路チップ１２ははんだの如き熱的及び電気的に伝導性の取り付け層１６により裏側接地面１４に装着される。接地面１４はリードフレーム２０に組み合わされたダイパドル１８に装着される。リードフレーム２０は相互に及びダイパドル１８から電気的に隔離された複数の別個のリード２４を有する。リード２４は他の回路素子及びシステムから集積回路チップ１２への信号及びパワー接続を提供する。金属トレース２６はパッケージ組立体１０内でリード２４の頂部に位置し、リードへの良好な電気接点を提供する。信号ワイヤボンド２８はトレース２６及びチップ１２に電気的に接続され、これらへの電気的接続を形成する。更に、接地ワイヤボンド３０は、図示のように、接地面１４及びトレース２６又は接地面１４及びチップ１２に電気的に結合される。流動可能なはんだ層３２はリード２４及びダイパドル１８の底表面に付着され、良好な電気的、機械的及び熱的なカップリングを提供する。   FIG. 1 is a cross-sectional view of a package assembly 10 for packaging an integrated circuit chip 12 of the type described above. The integrated circuit chip 12 is attached to the backside ground plane 14 by a thermally and electrically conductive attachment layer 16 such as solder. The ground plane 14 is attached to a die paddle 18 combined with a lead frame 20. The lead frame 20 has a plurality of separate leads 24 that are electrically isolated from each other and from the die paddle 18. Lead 24 provides a signal and power connection from other circuit elements and systems to integrated circuit chip 12. A metal trace 26 is located on top of the lead 24 in the package assembly 10 and provides good electrical contact to the lead. The signal wire bond 28 is electrically connected to and forms an electrical connection to the trace 26 and the chip 12. In addition, ground wire bond 30 is electrically coupled to ground plane 14 and trace 26 or ground plane 14 and chip 12 as shown. A flowable solder layer 32 is applied to the lead 24 and the bottom surface of the die paddle 18 to provide good electrical, mechanical and thermal coupling.

プラスチック化合物の如き成形可能な材料が集積回路チップ１２、ワイヤボンド２８、３０及びリードフレーム２０のまわりで射出成形され、素子をシールすると共に保護カバー３６を提供する。パッケージ組立体１０は他のパッケージ組立体を含む回路盤（図示せず）に表面装着され、電気システムを形成する。はんだ層３２は、はんだがリード２４の側部上まで流れて回路盤への良好な電気接続を形成するように、加熱される。   A moldable material such as a plastic compound is injection molded around the integrated circuit chip 12, wire bonds 28, 30 and lead frame 20 to seal the device and provide a protective cover 36. Package assembly 10 is surface mounted to a circuit board (not shown) containing other package assemblies to form an electrical system. The solder layer 32 is heated so that the solder flows over the sides of the leads 24 and forms a good electrical connection to the circuit board.

図１に示すパッケージ組立体１０のリードフレーム２０のリード２４は保護カバー３６の側部を越えて延びる。従って、組立体１０の寸法は必要以上に大きい。図２はパッケージ組立体１０の変形例である別の既知のパッケージ組立体４０の断面図であり、同様の素子は同じ符号で示してある。この実施の形態においては、カバー３６を形成するための成形に当って、リード２４と一直線の側部となるようにモールド成形され、そのため、はんだがリード２４の側部上まで流れたとき、これへの電気的接続を更に形成する。   The lead 24 of the lead frame 20 of the package assembly 10 shown in FIG. 1 extends beyond the side of the protective cover 36. Therefore, the dimensions of the assembly 10 are larger than necessary. FIG. 2 is a cross-sectional view of another known package assembly 40 which is a variation of the package assembly 10, and like elements are indicated with the same reference numerals. In this embodiment, in forming to form the cover 36, it is molded so as to be in a side that is in line with the lead 24, so that when the solder flows over the side of the lead 24, An electrical connection to is further formed.

本発明の教示に従えば、従来必要とされたワイヤボンドを排除し、集積回路がまだウエファーフォーマット内にある間に集積回路のパッケージを提供する、集積回路のためのパッケージ組立体が開示される。   In accordance with the teachings of the present invention, a package assembly for an integrated circuit is disclosed that eliminates previously required wire bonds and provides an integrated circuit package while the integrated circuit is still in wafer format. .

その上に多くの集積回路を作成したウエファー基板は、各回路の外周のまわりで基板を通して信号及びパワーバイアを形成し、回路の下方で基板を通して接地バイアを形成するように、パターン化され、エッチングされる。ウエファー基板の一部とバイアと集積回路との組み合わせは集積回路ダイを画定する。ボンディングパッドはウエファー基板の頂表面及び底表面上に付着され、信号バイアに電気的に結合される。裏側接地面が接地バイアと電気的に接触するように設けられる。   The wafer substrate on which many integrated circuits are formed is patterned and etched to form signal and power vias through the substrate around the periphery of each circuit and to form ground vias through the substrate below the circuit. Is done. The combination of a portion of the wafer substrate, the via and the integrated circuit defines an integrated circuit die. Bonding pads are deposited on the top and bottom surfaces of the wafer substrate and are electrically coupled to the signal vias. A back side ground plane is provided in electrical contact with the ground via.

頂部保護層は全部の集積回路上に付着され、フォトレジストは、ウエファー基板材料をダイ間で除去できるように、ウエファー基板の底表面上で付着され、パターン化され、エッチングされる。次いで、底部保護層がウエファー基板の底表面上に付着され、基板材料を除去してしまったダイ間の領域を満たす。次いで、底部保護層は、パッケージ組立体の外部での電気接点を形成するために裏側金属層及び信号パッドと接触するようなそこを通る電気的なバイアを提供するように、パターン化され、エッチングされる。次いで、ウエファーは、ダイの側部上の種々のバイアが組立体内で回路へ電気信号を提供するために露出するように、ダイの縁部に沿ってダイ処理される。   The top protective layer is deposited on all integrated circuits and the photoresist is deposited, patterned and etched on the bottom surface of the wafer substrate so that the wafer substrate material can be removed between the dies. A bottom protective layer is then deposited on the bottom surface of the wafer substrate to fill the area between the dies that has removed the substrate material. The bottom protective layer is then patterned and etched to provide an electrical via therethrough to contact the backside metal layer and signal pads to form electrical contacts external to the package assembly. Is done. The wafer is then die processed along the edge of the die so that various vias on the sides of the die are exposed to provide electrical signals to the circuitry within the assembly.

ウエファーフォーマットにおいて集積回路をパッケージングするための方法に係る本発明の実施の形態の以下の説明は本質的に単なる例示であり、本発明又はその応用又は使用を限定する意図のものではない。 The following description of an embodiment of the invention relating to a method for packaging an integrated circuit in a wafer format is merely exemplary in nature and is not intended to limit the invention or its application or use.

図３−６は、集積回路６２がここでは半導体ウエファー基板６４として表す製作ウエファーのまだ一部である間の、集積回路６２をパッケージングするための処理工程を示す、集積回路構造体６０の断面図である。半導体基板６４は、特定のデバイスに応じて、Ｓｉ、ＩｎＰ、ＧａＡｓ等の如き任意の適当な半導体又は基板ウエファー材料とすることができ、５０−１０００μｍの如き適当な厚さを有する。更に、ウエファーは任意の適当な直径とすることができ、集積回路６２は増幅器、ＲＡＭ、ＤＡＣ、ＡＤＣ等の如き任意の適当な電気素子とすることができる。集積回路６２は集積回路ダイ（チップ）６６の一部であり、多くのダイは罫書きレーン（スクライブレーン）６８により分離される。典型的な集積回路ダイの寸法は１／２ｍｍ2から６２５ｍｍ2までの範囲にある。 FIGS. 3-6 are cross sections of integrated circuit structure 60 showing the process steps for packaging integrated circuit 62 while integrated circuit 62 is still part of a fabrication wafer, here represented as semiconductor wafer substrate 64. FIG. FIG. The semiconductor substrate 64 can be any suitable semiconductor or substrate wafer material such as Si, InP, GaAs, etc., depending on the particular device, and has a suitable thickness such as 50-1000 μm. Further, the wafer can be any suitable diameter, and the integrated circuit 62 can be any suitable electrical element such as an amplifier, RAM, DAC, ADC, or the like. The integrated circuit 62 is part of an integrated circuit die (chip) 66, many of which are separated by a scribing lane (scribe lane) 68. Typical integrated circuit die dimensions range from 1/2 mm 2 to 625 mm 2 .

ここで一層詳細に説明するが、信号接続、パワー接続及び接地接続を含む電気的な接続は接地バイア７２並びに信号及びパワーバイア７４によりパッケージ組立体の外部の他の回路に対して行われる。バイア７２、７４は、基板６４上のフォトレジスト層（図示せず）をパターン化し、バイアを位置させるべき場所から、パターン化されたフォトレジスト層を通して半導体材料をエッチングで除去し、基板６４内に形成された穴を銅合金の如き適当なバイア金属で満たすことにより、基板６４を通して形成される。図示のように、バイア７２、７４は、異方性エッチングを含む従来既知のいくつかの技術のうちの任意のものにより、基板６４の頂表面７６を通して形成される。   As will be described in more detail herein, electrical connections including signal connections, power connections and ground connections are made to ground via 72 and other circuits external to the package assembly by signal and power vias 74. Vias 72, 74 pattern a photoresist layer (not shown) on substrate 64 and etch away semiconductor material through the patterned photoresist layer from where the vias are to be located, into substrate 64. Formed through substrate 64 by filling the formed holes with a suitable via metal such as a copper alloy. As shown, the vias 72, 74 are formed through the top surface 76 of the substrate 64 by any of several conventionally known techniques including anisotropic etching.

一連の頂側ボンドパッド７８は集積回路６２のまわりでパターン化され、集積回路６２に対する信号及びパワー接続を提供する。特に、集積回路６２に関連する種々の信号及びパワートレースは集積回路６２の縁部に沿って形成され、ボンドパッド７８がそれと電気接触できるようにする。ボンドパッド７８は、図示のように、適当なバイア７４により基板６４の裏側８４上の裏側ボンドパッド８０に電気的に結合される。裏側接地面８２は基板６４の裏側８４上でパターン化され、集積回路６２から接地面８２への接続は適当なバイア７２を介して行われる。接地面８２は熱溜め（熱シンク）の目的で適当な熱伝導性を提供するのに適した寸法及び形状を有する。明らかなように、接地面８２は裏側パッド８０から電気的に隔離される。従って、ダイ６６は集積回路６２、パッド７８、８０、基板６４の一部及び接地面８２から構成される。   A series of top bond pads 78 are patterned around the integrated circuit 62 to provide signal and power connections to the integrated circuit 62. In particular, various signals and power traces associated with integrated circuit 62 are formed along the edge of integrated circuit 62 to allow bond pad 78 to be in electrical contact therewith. Bond pad 78 is electrically coupled to back side bond pad 80 on back side 84 of substrate 64 by a suitable via 74 as shown. The backside ground plane 82 is patterned on the backside 84 of the substrate 64 and the connection from the integrated circuit 62 to the ground plane 82 is made through a suitable via 72. The ground plane 82 has a size and shape suitable for providing adequate thermal conductivity for the purpose of a heat sink. As can be seen, the ground plane 82 is electrically isolated from the backside pad 80. Accordingly, the die 66 includes the integrated circuit 62, pads 78 and 80, a part of the substrate 64, and the ground plane 82.

次いで、適当な材料が全体のウエファーの頂部に付着され、図４に示すような頂部保護層９０を提供する。保護層９０はプラスチック化合物の如き任意の適当な材料とすることができ、１５０−２００μｍの如き任意の適当な厚さとすることができる。フォトレジスト層９２が構造体６０の裏側上で付着され、パターン化されて、罫書きレーン６８内の基板６４の区域９６が露出し、ダイ６６内のバイア７２、７４間の基板６４の区域９４が露出しないようにする。次いで、適当なエッチング剤を使用して区域９６内の基板材料を除去し、ダイ６６を一緒に保持する元の材料を除去する。ウエファー内の種々のダイ６６は頂部保護層９０によりまだ保持されている。基板のエッチングの間、エッチング剤は、その外縁のまわりにおいて信号バイア７４間でダイ６６の内方へ横方向に、破線１０２で表す位置まで移動する。   A suitable material is then applied to the top of the entire wafer to provide a top protective layer 90 as shown in FIG. The protective layer 90 can be any suitable material, such as a plastic compound, and can be any suitable thickness, such as 150-200 μm. A layer of photoresist 92 is deposited on the back side of the structure 60 and patterned to expose an area 96 of the substrate 64 in the scoring lane 68 and an area 94 of the substrate 64 between the vias 72, 74 in the die 66. Do not expose. A suitable etchant is then used to remove the substrate material in the area 96 and the original material that holds the die 66 together. Various dies 66 in the wafer are still held by the top protective layer 90. During substrate etching, the etchant moves laterally inward of the die 66 between the signal vias 74 about its outer edge to the position represented by the dashed line 102.

次いで、フォトレジスト層９２が適当なエッチング処理により除去され、底部保護層９８が構造体６０の裏側上に付着されて、図５に示すように、基板６４の区域９６が先に除去されてしまった区域１００を満たす。従って、図示のように、頂部層９０及び底部層９８は罫書きレーン６８で併合する。保護層９８は保護層９０と同じ材料又は別の適当な材料で作ることができる。また、１つの実施の形態においては、保護層９８は１５０−２００μｍの如き保護層９０とほぼ同じ厚さを有する。   The photoresist layer 92 is then removed by a suitable etching process, and a bottom protective layer 98 is deposited on the back side of the structure 60, and the area 96 of the substrate 64 has been removed first, as shown in FIG. Fill area 100. Accordingly, the top layer 90 and the bottom layer 98 merge at the scribe lane 68 as shown. The protective layer 98 can be made of the same material as the protective layer 90 or another suitable material. Also, in one embodiment, the protective layer 98 has approximately the same thickness as the protective layer 90, such as 150-200 μm.

次に、フィトレジスト層が裏側保護層９８の裏側表面１０４上で付着され、パターン化される。フォトレジスト層内の開口がボンドパッド８０及び接地面８２に対向して画定される。次いで、保護層９８はフォトレジスト層の開口を通してエッチングされて、図６に示すように、パッド８０及び裏側接地面８２を露出させるために保護層９８内に開口が設けられる。これらの開口即ち穴は、パッド８０に接触する電気信号及びパワーバイア１０６並びに接地面８２に接触する接地バイア１０８を提供するように、バイア物質で満たされる。それ故、ダイ６６は保護層９０、９８により完全に保護され、保護層９８を通してのバイア１０６、１０８による集積回路６２への電気的カップリングを有する。   Next, a photoresist layer is deposited and patterned on the back side surface 104 of the back side protective layer 98. An opening in the photoresist layer is defined opposite the bond pad 80 and the ground plane 82. The protective layer 98 is then etched through the openings in the photoresist layer to provide openings in the protective layer 98 to expose the pads 80 and the backside ground plane 82, as shown in FIG. These openings or holes are filled with via material to provide an electrical signal and power via 106 that contacts the pad 80 and a ground via 108 that contacts the ground plane 82. Therefore, die 66 is fully protected by protective layers 90, 98 and has electrical coupling to integrated circuit 62 by vias 106, 108 through protective layer 98.

ダイ６６がまだウエファーフォーマット内にある間、ダイをプローブ調査し、試験し、描写できる。ダイ６６を試験した後、保護された集積回路パッケージ組立体としてダイ６６を分離するために線１１０に沿って構造体６０を切断することにより、ダイが分離される。明らかなように、信号及びパワーバイア７４はパッケージ組立体の外部環境に曝され、接地面８２はパッケージ組立体の底部でバイア１０８と電気的に接触する。更に、ダイ半導体材料は保護層９８により保護される。   While the die 66 is still in the wafer format, the die can be probed, tested, and depicted. After testing die 66, the die are separated by cutting structure 60 along line 110 to separate die 66 as a protected integrated circuit package assembly. As can be seen, the signal and power vias 74 are exposed to the external environment of the package assembly, and the ground plane 82 is in electrical contact with the vias 108 at the bottom of the package assembly. In addition, the die semiconductor material is protected by a protective layer 98.

図７は切断線１１０に沿って構造体６０から除去された分離されたダイ６６の１つであるパッケージ化されたダイ１１２の斜視図であり、同様の素子は同様の符号で示してある。明らかなように、集積回路６２に対する電気的接触は種々のバイア１０６、７４により提供することができる。パッケージ化されたダイ１１２は電気回路盤に表面装着することができ、この場合、はんだはバイア１０６の側部上まで流れ、既知のパッケージ組立体において行われていたような電気的接触を形成する。１つの実施の形態においては、パッケージ化されたダイ１１２の完全な厚さは約１００−５００μｍほどまで小さくすることができる。これは同じ寸法のダイのために従来知られているパッケージ組立体よりも実質的に薄い。   FIG. 7 is a perspective view of packaged die 112, one of the separated dies 66 removed from structure 60 along section line 110, where like elements are indicated by like reference numerals. As will be apparent, electrical contact to the integrated circuit 62 can be provided by various vias 106,74. The packaged die 112 can be surface mounted to an electrical circuit board, in which case the solder flows over the sides of the via 106 and makes electrical contact as was done in known package assemblies. . In one embodiment, the full thickness of the packaged die 112 can be as small as about 100-500 μm. This is substantially thinner than previously known package assemblies for the same size die.

上述したパッケージ製作技術は、ダイが重ねられるパッケージ組立体まで広げることができる。図８はこの実施の形態を示すウエファー構造体１２０の断面図であり、同様の素子は上記で使用したものと同じ符号で特定してある。頂部から集積回路６２への電気接続を提供するため、フォトレジスト及びエッチング剤を使用して、保護層９０がパターン化され、エッチングされて、下方の信号パッド７８を露出させるために層９０を通る穴を形成する。次いで、穴即ち開口がバイア材料で満たされ、信号パッド７８との電気接触を行うバイア１２２を形成する。バイア１２２の頂表面はパッケージ化ピン接続位置を提供し、また、集積回路がまだウエファーフォーマット内にある間に集積回路６２を試験するために使用することができる。次いで、上述のように構造体１２０が切断線１１０に沿ってダイ処理され、別個のパッケージ化ダイを提供する。この実施の形態においては、パッケージ化ダイは通常の上向きで又は上側を下にして表面装着することができ、いずれも集積回路６２に対する電気接続及び接地接続を提供する。   The package fabrication techniques described above can be extended to package assemblies where dies are stacked. FIG. 8 is a cross-sectional view of the wafer structure 120 showing this embodiment. Similar elements are identified by the same reference numerals as those used above. To provide an electrical connection from the top to the integrated circuit 62, the protective layer 90 is patterned and etched using photoresist and etchant through the layer 90 to expose the underlying signal pad 78. Create a hole. The hole or opening is then filled with a via material to form a via 122 that makes electrical contact with the signal pad 78. The top surface of the via 122 provides a packaged pin connection location and can be used to test the integrated circuit 62 while the integrated circuit is still in the wafer format. The structure 120 is then die processed along the cutting line 110 as described above to provide a separate packaged die. In this embodiment, the packaging die can be surface-mounted, typically facing up or facing down, both providing electrical and ground connections to the integrated circuit 62.

バイア１２２は、空間を大事に使うためにパッケージ化ダイが互いの頂部で重なるのを可能にする。図９ははんだ再流ボンド１３６により底部パッケージ化ダイ１３４に装着された頂部パッケージ化ダイ１３２を含むパッケージ組立体１３０の斜視図である。明らかなように、両方のパッケージ化ダイ１３２、１３４は構造体１２０からのもので互いに上下に重ねられたパッケージ化ダイである。明らかなように、集積回路６２に対する電気接続を提供するためにパッケージ組立体１３０にわたって適正な電気接続が行われる。本発明は２つの重ねられたパッケージ化ダイに限定されず、任意の妥当な数の重ねられたダイまで広げることができる。   Vias 122 allow packaging dies to overlap on top of each other to conserve space. FIG. 9 is a perspective view of a package assembly 130 that includes a top packaging die 132 mounted to a bottom packaging die 134 by solder reflow bonds 136. As can be seen, both packaging dies 132, 134 are from the structure 120 and are packaged dies that are stacked one above the other. As will be apparent, proper electrical connections are made across the package assembly 130 to provide electrical connections to the integrated circuit 62. The present invention is not limited to two stacked packaging dies, but can be extended to any reasonable number of stacked dies.

上述の説明は本発明の単なる例示的な実施の形態を開示し、述べたものである。当業者なら、このような説明から並びに添付図面及び特許請求の範囲の記載から、特許請求の範囲で規定されたような本発明の範囲を逸脱することなく、種々の変更、修正及び変形が可能であることを容易に認識できよう。   The foregoing description discloses and describes merely exemplary embodiments of the present invention. Those skilled in the art can make various changes, modifications, and variations from this description and from the accompanying drawings and claims without departing from the scope of the present invention as defined in the claims. You can easily recognize that.

集積回路のための既知のパッケージ組立体の断面図である。1 is a cross-sectional view of a known package assembly for an integrated circuit. 集積回路のための別の既知のパッケージ組立体の断面図である。FIG. 6 is a cross-sectional view of another known package assembly for an integrated circuit. 本発明に係る、ウエファーフォーマットにおいて集積回路をパッケージングするための製作技術を示す構造形状の断面図である。1 is a cross-sectional view of a structural shape showing a fabrication technique for packaging an integrated circuit in a wafer format according to the present invention. 本発明に係る、ウエファーフォーマットにおいて集積回路をパッケージングするための製作技術を示す構造形状の断面図である。1 is a cross-sectional view of a structural shape showing a fabrication technique for packaging an integrated circuit in a wafer format according to the present invention. 本発明に係る、ウエファーフォーマットにおいて集積回路をパッケージングするための製作技術を示す構造形状の断面図である。1 is a cross-sectional view of a structural shape showing a fabrication technique for packaging an integrated circuit in a wafer format according to the present invention. 本発明に係る、ウエファーフォーマットにおいて集積回路をパッケージングするための製作技術を示す構造形状の断面図である。1 is a cross-sectional view of a structural shape showing a fabrication technique for packaging an integrated circuit in a wafer format according to the present invention. ウエファーから分離された図６に示す集積回路パッケージの１つを示す斜視図である。FIG. 7 is a perspective view showing one of the integrated circuit packages shown in FIG. 6 separated from the wafer. 本発明の別の実施の形態に係る、ウエファーフォーマットにおいて集積回路をパッケージングするための製作技術を示す構造形状の断面図である。FIG. 6 is a structural cross-sectional view illustrating a fabrication technique for packaging an integrated circuit in a wafer format, according to another embodiment of the present invention. ウエファーから分離され、一緒に重ねられた図８に示す回路パッケージの２つを示す斜視図である。FIG. 9 is a perspective view showing two of the circuit packages shown in FIG. 8 separated from the wafer and stacked together.

符号の説明Explanation of symbols

６２ 集積回路
６４ ウエファー基板
６６ 集積回路ダイ
７２、７４ バイア
７８、８０ パッド
８２ 接地面
９０、９８ 保護層
１０６、１０８ バイア
１１２ パッケージ化ダイ
１２０ ウエファー構造体
１２２ バイア
１３０ パッケージ組立体
１３２、１３４ パッケージ化ダイ 62 Integrated circuit 64 Wafer substrate 66 Integrated circuit die 72, 74 Via 78, 80 Pad 82 Ground plane 90, 98 Protective layer 106, 108 Via 112 Packaged die 120 Wafer structure 122 Via 130 Package assembly 132, 134 Packaged die

Claims (10)

ウエファーフォーマットにおいてパッケージ化された集積回路ダイを製作する方法において、
頂表面及び底表面を有するウエファー基板を提供する工程と；
それぞれ罫書きレーンにより互いに分離された複数の集積回路を上記ウエファー基板の上記頂表面上に製作する工程と；
上記集積回路に関して上記基板を通して信号バイアを形成する工程と；
集積回路に電気的に接触する頂側ボンドパッドを、上記信号バイアに接触させて上記基板の上記頂表面上に付着する工程と；
上記信号バイアに接触させて上記基板の上記底表面上に裏側ボンドパッドを付着し、上記頂側パッドと上記裏側パッドとの間に電気的接続を形成する工程と；
上記頂側パッド及び上記集積回路を覆うように頂側保護層を上記ウエファー基板上に付着する工程と；
上記罫書きレーン内の基板材料の部分を、上記集積回路間で上記基板の底部から除去する工程と；
上記罫書きレーン内で除去された上記基板の部分を満たしかつ上記頂側保護層と接触するように、底側保護層を当該ウエファー基板上に付着する工程と；
上記裏側ボンドパッドに接触するように上記裏側保護層を通して信号バイアを形成する工程と；
パッケージ化されたダイの外表面がこれへの電気的な接続を形成するための露出した信号バイアを含むように、上記罫書きレーンに沿って上記ウエファー基板を切断して、上記パッケージ化されたダイに分離する工程と；
を有することを特徴とする方法。 In a method of fabricating an integrated circuit die packaged in a wafer format,
Providing a wafer substrate having a top surface and a bottom surface;
Producing a plurality of integrated circuits each separated from each other by a scoring lane on the top surface of the wafer substrate;
Forming a signal via through the substrate with respect to the integrated circuit;
Depositing a top bond pad in electrical contact with the integrated circuit on the top surface of the substrate in contact with the signal via;
Contacting a backside bond pad on the bottom surface of the substrate in contact with the signal via to form an electrical connection between the top pad and the backside pad;
Depositing a top protective layer on the wafer substrate so as to cover the top pad and the integrated circuit;
Removing a portion of the substrate material in the scoring lane from the bottom of the substrate between the integrated circuits;
Depositing a bottom protective layer on the wafer substrate so as to fill the portion of the substrate removed in the scoring lane and to contact the top protective layer;
Forming a signal via through the backside protective layer in contact with the backside bond pad;
The packaged die is cut and cut along the scoring lane so that the outer surface of the packaged die includes exposed signal vias to form electrical connections thereto. Separating into dies;
A method characterized by comprising: 上記基板を通って延び、上記集積回路の裏面金属層と電気的に接触する複数の接地バイアを形成する工程を更に有することを特徴とする請求項１に記載の方法。   The method of claim 1, further comprising forming a plurality of ground vias extending through the substrate and in electrical contact with the backside metal layer of the integrated circuit. 上記裏側パッドに隣接しかつ上記接地バイアと電気的に接触して上記基板の上記底表面上に接地面を付着する工程を更に有することを特徴とする請求項２に記載の方法。   The method of claim 2, further comprising depositing a ground plane on the bottom surface of the substrate adjacent to the backside pad and in electrical contact with the ground via. 上記接地面に電気的に接触するように上記裏側層を通して接地バイアを形成する工程を更に有することを特徴とする請求項３に記載の方法。   4. The method of claim 3, further comprising forming a ground via through the backside layer so as to be in electrical contact with the ground plane. 基板材料の部分を除去する上記工程が、上記罫書きレーンの外側の信号バイア間の基板材料の部分を除去する工程を含むことを特徴とする請求項１に記載の方法。   The method of claim 1, wherein the step of removing a portion of the substrate material comprises removing a portion of the substrate material between signal vias outside the scoring lane. 基板材料の部分を除去する上記工程が、上記集積回路の下方の上記ウエファー基板の基板材料の除去を阻止する工程を含むことを特徴とする請求項１に記載の方法。   The method of claim 1, wherein the step of removing a portion of the substrate material comprises preventing removal of the substrate material of the wafer substrate below the integrated circuit. 上記ウエファーを切断する前に上記集積回路の性能試験を行う工程を更に有することを特徴とする請求項１に記載の方法。   The method of claim 1, further comprising the step of performing a performance test on the integrated circuit before cutting the wafer. 上記頂側パッドと電気的に接触するバイアを、上記頂側保護層を通して形成する工程を更に有することを特徴とする請求項１に記載の方法。   The method of claim 1, further comprising forming a via in electrical contact with the top pad through the top protective layer. １つのダイ内の上記裏側層を通る上記バイアが別のダイ内の上記頂側層を通る上記バイアと電気的に接触するように、複数の上記パッケージ化されたダイを重ねる工程を更に有することを特徴とする請求項８に記載の方法。   Further comprising stacking a plurality of the packaged dies such that the vias through the back layer in one die are in electrical contact with the vias through the top layer in another die. 9. The method of claim 8, wherein: 上記頂側層及び上記裏側保護層がプラスチック層を含むことを特徴とする請求項１に記載の方法。   The method of claim 1, wherein the top layer and the back protective layer comprise a plastic layer.
JP2003402763A 2003-06-04 2003-12-02 Integrated circuit die fabrication method Expired - Fee Related JP4357278B2 (en)

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