JP4342843B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4342843B2
JP4342843B2 JP2003167422A JP2003167422A JP4342843B2 JP 4342843 B2 JP4342843 B2 JP 4342843B2 JP 2003167422 A JP2003167422 A JP 2003167422A JP 2003167422 A JP2003167422 A JP 2003167422A JP 4342843 B2 JP4342843 B2 JP 4342843B2
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Japan
Prior art keywords
film
semiconductor film
semiconductor
gettering
layer
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Expired - Fee Related
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JP2003167422A
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JP2004072083A5 (enExample
JP2004072083A (ja
Inventor
英人 大沼
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2003167422A priority Critical patent/JP4342843B2/ja
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Publication of JP2004072083A5 publication Critical patent/JP2004072083A5/ja
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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
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JP2003167422A 2002-06-12 2003-06-12 半導体装置の作製方法 Expired - Fee Related JP4342843B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003167422A JP4342843B2 (ja) 2002-06-12 2003-06-12 半導体装置の作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002171224 2002-06-12
JP2003167422A JP4342843B2 (ja) 2002-06-12 2003-06-12 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2004072083A JP2004072083A (ja) 2004-03-04
JP2004072083A5 JP2004072083A5 (enExample) 2006-06-22
JP4342843B2 true JP4342843B2 (ja) 2009-10-14

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Family Applications (1)

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JP2003167422A Expired - Fee Related JP4342843B2 (ja) 2002-06-12 2003-06-12 半導体装置の作製方法

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JP (1) JP4342843B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5030406B2 (ja) * 2004-08-30 2012-09-19 株式会社半導体エネルギー研究所 表示装置の作製方法
JP5235051B2 (ja) * 2005-08-31 2013-07-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN119887715B (zh) * 2024-12-31 2025-11-21 河南科丰新材料有限公司 一种弧触头图像的抗拉伸性的评估处理方法及系统

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JP2004072083A (ja) 2004-03-04

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