JP4342843B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

Info

Publication number
JP4342843B2
JP4342843B2 JP2003167422A JP2003167422A JP4342843B2 JP 4342843 B2 JP4342843 B2 JP 4342843B2 JP 2003167422 A JP2003167422 A JP 2003167422A JP 2003167422 A JP2003167422 A JP 2003167422A JP 4342843 B2 JP4342843 B2 JP 4342843B2
Authority
JP
Japan
Prior art keywords
film
semiconductor film
semiconductor
gettering
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2003167422A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004072083A (ja
JP2004072083A5 (enrdf_load_stackoverflow
Inventor
英人 大沼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2003167422A priority Critical patent/JP4342843B2/ja
Publication of JP2004072083A publication Critical patent/JP2004072083A/ja
Publication of JP2004072083A5 publication Critical patent/JP2004072083A5/ja
Application granted granted Critical
Publication of JP4342843B2 publication Critical patent/JP4342843B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2003167422A 2002-06-12 2003-06-12 半導体装置の作製方法 Expired - Fee Related JP4342843B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003167422A JP4342843B2 (ja) 2002-06-12 2003-06-12 半導体装置の作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002171224 2002-06-12
JP2003167422A JP4342843B2 (ja) 2002-06-12 2003-06-12 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2004072083A JP2004072083A (ja) 2004-03-04
JP2004072083A5 JP2004072083A5 (enrdf_load_stackoverflow) 2006-06-22
JP4342843B2 true JP4342843B2 (ja) 2009-10-14

Family

ID=32032256

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003167422A Expired - Fee Related JP4342843B2 (ja) 2002-06-12 2003-06-12 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP4342843B2 (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5030406B2 (ja) * 2004-08-30 2012-09-19 株式会社半導体エネルギー研究所 表示装置の作製方法
JP5235051B2 (ja) * 2005-08-31 2013-07-10 株式会社半導体エネルギー研究所 半導体装置の作製方法

Also Published As

Publication number Publication date
JP2004072083A (ja) 2004-03-04

Similar Documents

Publication Publication Date Title
JP5393726B2 (ja) 半導体装置の作製方法
JP5072157B2 (ja) 半導体装置の作製方法
US7202119B2 (en) Method of manufacturing semiconductor device
US6858480B2 (en) Method of manufacturing semiconductor device
US7998845B2 (en) Semiconductor device and method of manufacturing the same
US7199027B2 (en) Method of manufacturing a semiconductor film by plasma CVD using a noble gas and nitrogen
US7091110B2 (en) Method of manufacturing a semiconductor device by gettering using a anti-diffusion layer
JP4860055B2 (ja) 半導体装置の作製方法
JP4216003B2 (ja) 半導体装置の作製方法
JP4176362B2 (ja) 半導体装置の作製方法
JP2004022900A (ja) 半導体装置の作製方法
JP4212844B2 (ja) 半導体装置の作製方法
JP4342843B2 (ja) 半導体装置の作製方法
JP4346852B2 (ja) 半導体装置の作製方法
JP4267253B2 (ja) 半導体装置の作製方法
JP4837871B2 (ja) 半導体装置の作製方法
JP5005881B2 (ja) 半導体装置の作製方法
JP4176366B2 (ja) 半導体装置の作製方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060510

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060510

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20090316

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090401

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090526

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20090707

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20090708

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120717

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120717

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120717

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120717

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130717

Year of fee payment: 4

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees