JP4342409B2 - Mramのための熱支援型切換えアレイ構成 - Google Patents
Mramのための熱支援型切換えアレイ構成 Download PDFInfo
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- JP4342409B2 JP4342409B2 JP2004271362A JP2004271362A JP4342409B2 JP 4342409 B2 JP4342409 B2 JP 4342409B2 JP 2004271362 A JP2004271362 A JP 2004271362A JP 2004271362 A JP2004271362 A JP 2004271362A JP 4342409 B2 JP4342409 B2 JP 4342409B2
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- 230000015654 memory Effects 0.000 claims description 145
- 230000005291 magnetic effect Effects 0.000 claims description 121
- 239000004020 conductor Substances 0.000 claims description 65
- 230000005415 magnetization Effects 0.000 claims description 25
- 238000003860 storage Methods 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 18
- 230000005294 ferromagnetic effect Effects 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 5
- 230000003247 decreasing effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 135
- 230000007423 decrease Effects 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 239000000696 magnetic material Substances 0.000 description 4
- 238000003491 array Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000005253 cladding Methods 0.000 description 3
- 238000013500 data storage Methods 0.000 description 3
- 239000006249 magnetic particle Substances 0.000 description 3
- 230000005055 memory storage Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000003302 ferromagnetic material Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- KGWWEXORQXHJJQ-UHFFFAOYSA-N [Fe].[Co].[Ni] Chemical compound [Fe].[Co].[Ni] KGWWEXORQXHJJQ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- FQMNUIZEFUVPNU-UHFFFAOYSA-N cobalt iron Chemical compound [Fe].[Co].[Co] FQMNUIZEFUVPNU-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000005347 demagnetization Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
- Semiconductor Memories (AREA)
Description
上記の熱試験型磁気メモリ(50)では、書込み動作中に、所与の導電性の行(102)および所与の導電性の列(104)によって所与の磁気トンネル接合メモリセル(100)にバイアス電流が加えられ、そのバイアス電流が前記所与の磁気トンネル接合メモリセル(100)を加熱し、前記書込み導体(140)に流れる電流によって書込み磁界が生成され、前記所与の磁気トンネル接合メモリセル(100)の上方および下方に配置された前記ループ書き込み導体の特徴により、前記所与の磁気トンネル接合メモリセル(100)を飽和させる書込み磁界(306、308)が2倍になり、前記材料の磁化の向きが変更されることができ、前記ループ書込み導体(140)によって与えられる磁界が前記加熱された材料の保磁力よりも大きいことが望ましい。
上記のオフセットされた磁気トンネル接合メモリセル(100)が、薄い上側導体(112)によって前記導電性の行に結合され、かつ薄い下側導体(114)によって前記導電性の列に結合され、前記上側導体(112)および前記下側導体(114)が前記磁気トンネル接合メモリセル(100)をクロスポイント軸から横に変位させることが望ましい。前記複数のループ書込み導体(140)が、前記導電性の行(102)に対して平行に延びることが望ましい。上記の複数のループ書込み導体(140)が、前記導電性の列(104)に対して平行に延びることが望ましい。各メモリセル(100)が、ピン留めされた磁化の向きによって特徴付けられる基準層(110)をさらに含むことが望ましい。上記の各メモリセル(100)が軟らかい強磁性基準層(110)をさらに含み、その軟らかい基準層(110)がピン留めされない磁化の向きを有することが望ましい。
100 磁気メモリセル
102 行
104 列
106 データ層
110 基準層
112 上側オフセット導体
114 下側オフセット導体
140 ループ書込み導体
Claims (8)
- 複数の平行な導電性の行(102)と、
前記行(102)を横切る複数の平行な導電性の列(104)であって、それにより前記列(104)および前記行(102)が複数の交点を有するクロスポイントアレイを形成する、複数の平行な導電性の列と、
複数のオフセットされた磁気トンネル接合メモリセル(100)であって、各メモリセル(100)が、1つの行と1つの列との間の交点に近接し、かつ当該1つの行および1つの列と電気接触して配置され、当該メモリセル(100)が変更可能な磁化の向きを有する材料を含み、当該変更可能な材料の保磁力は、温度が上昇すると減少するものであって、前記交点のクロスポイント軸から横方向にオフセットするように配置された複数の磁気トンネル接合メモリセルと、
各磁気トンネル接合メモリセル(100)の上方および下方に、前記導電性の行および列とは別個に配置される複数のループ書込み導体(140)とを備える、熱支援型磁気メモリ(50)記憶デバイス。 - 前記ループ書込み導体(140)が前記メモリセル(100)と電気接触しない、請求項1に記載の熱支援型磁気メモリ(50)記憶デバイス。
- 書込み動作中に、
所与の導電性の行(102)および所与の導電性の列(104)によって所与の磁気トンネル接合メモリセル(100)にバイアス電流が加えられ、そのバイアス電流が前記所与の磁気トンネル接合メモリセル(100)を加熱し、
前記書込み導体(140)に流れる電流によって書込み磁界が生成され、前記所与の磁気トンネル接合メモリセル(100)の上方および下方に配置された前記ループ書き込み導体の特徴により、前記所与の磁気トンネル接合メモリセル(100)を飽和させる書込み磁界(306、308)が2倍になり、
前記材料の磁化の向きが変更されることができ、前記ループ書込み導体(140)によって与えられる磁界が前記加熱された材料の保磁力よりも大きい、請求項1に記載の熱支援型磁気メモリ(50)記憶デバイス。 - 前記オフセットされた磁気トンネル接合メモリセル(100)が、薄い上側導体(112)によって前記導電性の行に結合され、かつ薄い下側導体(114)によって前記導電性の列に結合され、前記上側導体(112)および前記下側導体(114)が前記磁気トンネル接合メモリセル(100)をクロスポイント軸から横に変位させる、請求項1に記載の熱支援型磁気メモリ(50)記憶デバイス。
- 前記複数のループ書込み導体(140)が、前記導電性の行(102)に対して平行に延びる、請求項1に記載の熱支援型磁気メモリ(50)記憶デバイス。
- 前記複数のループ書込み導体(140)が、前記導電性の列(104)に対して平行に延びる、請求項1に記載の熱支援型磁気メモリ(50)記憶デバイス。
- 各メモリセル(100)が、ピン留めされた磁化の向きによって特徴付けられる基準層(110)をさらに含む、請求項1に記載の熱支援型磁気メモリ(50)記憶デバイス。
- 前記各メモリセル(100)が軟らかい強磁性基準層(110)をさらに含み、その軟らかい基準層(110)がピン留めされない磁化の向きを有する、請求項1に記載の熱支援型磁気メモリ(50)記憶デバイス。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/668,405 US6865105B1 (en) | 2003-09-22 | 2003-09-22 | Thermal-assisted switching array configuration for MRAM |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005101605A JP2005101605A (ja) | 2005-04-14 |
JP4342409B2 true JP4342409B2 (ja) | 2009-10-14 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004271362A Expired - Lifetime JP4342409B2 (ja) | 2003-09-22 | 2004-09-17 | Mramのための熱支援型切換えアレイ構成 |
Country Status (3)
Country | Link |
---|---|
US (1) | US6865105B1 (ja) |
JP (1) | JP4342409B2 (ja) |
DE (1) | DE102004024377A1 (ja) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6944053B2 (en) * | 2003-06-17 | 2005-09-13 | Hewlett-Packard Development Company, L.P. | Magnetic memory with structure providing reduced coercivity |
US7193889B2 (en) * | 2004-02-11 | 2007-03-20 | Hewlett-Packard Development Company, Lp. | Switching of MRAM devices having soft magnetic reference layers |
US20060036324A1 (en) * | 2004-08-03 | 2006-02-16 | Dan Sachs | Adjustable spinal implant device and method |
US7486545B2 (en) * | 2005-11-01 | 2009-02-03 | Magic Technologies, Inc. | Thermally assisted integrated MRAM design and process for its manufacture |
US7349243B2 (en) * | 2006-04-20 | 2008-03-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | 3-parameter switching technique for use in MRAM memory arrays |
US7457149B2 (en) * | 2006-05-05 | 2008-11-25 | Macronix International Co., Ltd. | Methods and apparatus for thermally assisted programming of a magnetic memory device |
US20080174936A1 (en) * | 2007-01-19 | 2008-07-24 | Western Lights Semiconductor Corp. | Apparatus and Method to Store Electrical Energy |
US20080273375A1 (en) * | 2007-05-02 | 2008-11-06 | Faiz Dahmani | Integrated circuit having a magnetic device |
US8031519B2 (en) * | 2008-06-18 | 2011-10-04 | Crocus Technology S.A. | Shared line magnetic random access memory cells |
US7897954B2 (en) * | 2008-10-10 | 2011-03-01 | Macronix International Co., Ltd. | Dielectric-sandwiched pillar memory device |
EP2608208B1 (en) * | 2011-12-22 | 2015-02-11 | Crocus Technology S.A. | Self-referenced MRAM cell and method for writing the cell using a spin transfer torque write operation |
EP2722902B1 (en) * | 2012-10-22 | 2016-11-30 | Crocus Technology S.A. | Self-referenced MRAM element and device having improved magnetic field |
KR102023626B1 (ko) | 2013-01-25 | 2019-09-20 | 삼성전자 주식회사 | 스핀 홀 효과를 이용한 메모리 소자와 그 제조 및 동작방법 |
EP3002759B1 (en) * | 2014-10-03 | 2020-08-05 | Crocus Technology S.A. | Method for writing in a magnetic device |
JP6973679B2 (ja) * | 2019-04-08 | 2021-12-01 | Tdk株式会社 | 磁性素子、磁気メモリ、リザボア素子、認識機及び磁性素子の製造方法 |
CN112820820B (zh) * | 2019-12-24 | 2023-05-19 | 长江存储科技有限责任公司 | 磁阻随机存取存储器 |
KR102608134B1 (ko) * | 2020-02-19 | 2023-12-01 | 양쯔 메모리 테크놀로지스 씨오., 엘티디. | 자기 메모리 구조 및 디바이스 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000079540A1 (en) | 1999-06-18 | 2000-12-28 | Nve Corporation | Magnetic memory coincident thermal pulse data storage |
US6163477A (en) | 1999-08-06 | 2000-12-19 | Hewlett Packard Company | MRAM device using magnetic field bias to improve reproducibility of memory cell switching |
US6385082B1 (en) | 2000-11-08 | 2002-05-07 | International Business Machines Corp. | Thermally-assisted magnetic random access memory (MRAM) |
US6603678B2 (en) | 2001-01-11 | 2003-08-05 | Hewlett-Packard Development Company, L.P. | Thermally-assisted switching of magnetic memory elements |
US6744086B2 (en) | 2001-05-15 | 2004-06-01 | Nve Corporation | Current switched magnetoresistive memory cell |
US6504221B1 (en) * | 2001-09-25 | 2003-01-07 | Hewlett-Packard Company | Magneto-resistive device including soft reference layer having embedded conductors |
US6728132B2 (en) * | 2002-04-03 | 2004-04-27 | Micron Technology, Inc. | Synthetic-ferrimagnet sense-layer for high density MRAM applications |
US6781910B2 (en) * | 2002-05-17 | 2004-08-24 | Hewlett-Packard Development Company, L.P. | Small area magnetic memory devices |
US6819587B1 (en) * | 2003-06-12 | 2004-11-16 | Hewlett-Packard Development Company, L.P. | Thermal-assisted nanotip magnetic memory storage device |
-
2003
- 2003-09-22 US US10/668,405 patent/US6865105B1/en not_active Expired - Lifetime
-
2004
- 2004-05-17 DE DE102004024377A patent/DE102004024377A1/de not_active Withdrawn
- 2004-09-17 JP JP2004271362A patent/JP4342409B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US6865105B1 (en) | 2005-03-08 |
JP2005101605A (ja) | 2005-04-14 |
DE102004024377A1 (de) | 2005-05-25 |
US20050063223A1 (en) | 2005-03-24 |
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